KR101846776B1 - Artificial structure - Google Patents

Abstract

The present invention relates to an artificial structure cell. According to an aspect of the present invention, an artificial structure includes artificial structure cells including a first artificial structure cell and a second artificial structure cell arranged thereon. The first artificial structure cell includes: a first middle layer; a first side layer which is arranged on a side of the first middle layer; a first other side layer which is arranged on the other side of the first middle layer; and a first vertical connector which connects the first side layer and the first other side layer. The first side layer has a first opening area to partition one or more areas. The first opening area of the first side layer has a first inductance while the first vertical connector has a first inductance. The second artificial structure cell includes: a second middle layer; a second side layer which is arranged on a side of the second middle layer; a second other side layer which is arranged on the other side of the second middle layer; and a second vertical connector which connects the second side layer and the second other side layer. A second opening area is formed on the second side layer to partition one or more areas. The second opening area of the second side layer has a second capacitance while the second vertical connector has a second inductance. The first and second capacitances have different values. A first resonance frequency is defined based on the first capacitance and the first inductance while a second resonance frequency is defined based on the second capacitance and the second inductance.

Description

Artificial Structure {ARTIFICIAL STRUCTURE}

The present application relates to an artificial structure cell, and more particularly, to an artificial structure capable of absorbing electromagnetic waves in multiple frequency bands based on an in-plane D structure cell having different capacitance values.

An artificial structure (or metamaterial Meta Material) is a structure that is artificially designed and implemented so as to have characteristics not found in nature yet.

The artificial structures designed for the special purpose can be applied to various fields. These various fields include i) technology industry fields such as aerospace industry field, sensor field, solar energy management field, earthquake damage prevention building design field, and the like, ii) electronic engineering, electromagnetics, classical optics, electromagnetics, , Nanoscience, and semiconductor engineering.

The artificial structure can be used particularly in an antenna field for absorbing electromagnetic waves. The conventional artificial structure used in the field of antennas is difficult to be miniaturized, ii) a frequency band that can be operated even if it is miniaturized is a high frequency band And the like.

In addition, even if the artificial structure is miniaturized, a complicated structure has to be implemented in the artificial structure in order to operate in multiple frequency bands.

Accordingly, there is a growing demand for a technique for implementing an artificial structure that can be operated in multiple frequencies by being implemented in a small size, operating in a low frequency band, and performing a simple structural change.

An object of the present invention is to provide an artificial structure cell which can be realized in a thin thickness and can operate in a low frequency band.

에서

)에도 에너지 흡수도를 일정하게 유지할 수 있는 인공 구조체 셀을 제공하는 것에 있다.Another object of the present invention is to provide a method of changing the angle of incidence of an incident electromagnetic wave,

in

The present invention is to provide an artificial structure cell which can maintain the energy absorption constant at the same time.

Another object of the present invention is to provide an artificial structure capable of operating in multiple frequency bands by varying capacitance values of artificial structure cells arranged in the artificial structure.

The problems to be solved by the present application are not limited to the above-described problems, and the matters not mentioned in the present specification can be clearly understood by those skilled in the art from the present specification and the accompanying drawings .

According to an aspect of the present invention, there is provided an artificial structure in which artificial structure cells including a first artificial structure cell and a second artificial structuring cell are disposed, the artificial structure including a first intermediate layer, a first side layer disposed on one side of the first intermediate layer, A first other layer disposed on the other side of the first intermediate layer, and a first vertical link connecting the first side layer and the first other layer, wherein the first one side layer is divided into at least one region The first opening region is formed, the first opening region of the first one side layer has a first capacitance, and the first up-and-down connecting body has the first inductance; And a second intermediate layer, a second one side layer disposed on one side of the second intermediate layer, a second other side layer disposed on the other side of the second intermediate layer, and a second side layer disposed on the other side of the second intermediate layer, Wherein the second opening layer has a second capacitance, and the second one side layer has a second capacitance, and the second one side layer has a second opening region that is divided into at least one region and the second opening region of the second one- The first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance have a second resonance frequency And an artificial structure in which a second resonance frequency is defined based on the second capacitance and the second inductance may be provided.

According to another aspect of the present application, A first layer disposed on one side of the intermediate layer; A second layer disposed on the other side of the intermediate layer; An artificial struc- ture in which at least one artificial struc- tural cell is disposed, the artificial struc- tural cell further comprising a connector connecting the first layer and the second layer, Wherein the first region, the first region, the second region, and the opening region have a capacitance, the at least one opening region being divided into two regions, And a second connection body, wherein the first connection body connects the 1-1 zone and the second layer, the second connection body connects the 1-2 zone and the second layer, Wherein the artificial struc- tural cell comprises a first artificial struc- tural cell and a second artificial struc- tural cell, wherein the artificial struc- ture includes a first artificial struc- tural cell and a second artificial struc- tural cell, The capacitance of the artificial cell is An artificial structure in which a first resonant frequency is determined based on a capacitance of the first artificial structure cell and a second resonant frequency is determined based on a capacitance of the second artificial structured cell may be provided.

The solution of the problem of the present application is not limited to the above-mentioned solutions, and the solutions which are not mentioned are to be clearly understood by those skilled in the art to which the present invention belongs It will be possible.

According to the present invention, it is possible to provide an artificial structure cell which can be realized in a thin thickness and can operate in a low frequency band.

에서

)에도 에너지 흡수도를 일정하게 유지할 수 있는 인공 구조체 셀을 제공할 수 있다.According to the present application, it is possible to change the polarization angle of an incident electromagnetic wave and change the incident angle (

in

It is possible to provide an artificial structure cell which can maintain energy absorption constant.

According to the present invention, it is possible to provide an artificial structure capable of operating in multiple frequency bands by varying capacitance values of artificial structure cells arranged in an artificial structure.

The effects of the present application are not limited to the effects described above, and effects not mentioned can be clearly understood by those skilled in the art from the present specification and the accompanying drawings.

1 is a view showing an artificial structure according to an embodiment of the present application.
2 is a view showing an artificial structure cell including an artificial structure according to an embodiment of the present invention.
FIG. 3 is a schematic diagram illustrating a first side layer according to an embodiment of the present application. FIG.
4 is a schematic diagram showing a first intermediate layer according to one embodiment of the present application.
5 is a schematic diagram showing a first other layer according to an embodiment of the present application.
6 is a schematic view showing a first up-and-down connected body according to an embodiment of the present application.
7 is a view showing an electrical equivalent circuit of the above artificial structural cell according to one embodiment of the present application.
8 is a view showing electromagnetic waves incident on an artificial structure cell according to an embodiment of the present application.
9 is a conceptual diagram showing an example in which an induction current is formed according to an embodiment of the present application.
10 is a conceptual diagram showing a magnetic field formed in an artificial structure cell according to an embodiment of the present application.
11 is a conceptual diagram showing impedance matching according to an embodiment of the present application.
12 is a flowchart showing an electromagnetic wave absorption method according to an embodiment of the present application.
FIG. 13 is a view showing an induction current formed in a first artificial structure cell according to an embodiment of the present application. FIG.
FIG. 14 is a graph showing an impedance real part, an imaginary part, and an absorption ratio of a first artificial structure cell according to an embodiment of the present application.
15 is a graph showing the resonance frequency and the absorption rate according to a change in capacitance value of the first artificial structure cell according to the embodiment of the present application.
16 is a diagram showing magnetic energy included in the first artificial structure cell and energy loss of the first artificial structure cell when an electromagnetic wave is incident according to an embodiment of the present application.
17 is a graph showing the degree of absorption of electromagnetic waves according to the angle of incidence of the electromagnetic wave into the first artificial structure cell according to the embodiment of the present application.
18 is a graph showing the degree of electromagnetic wave absorption of the first artificial structure cell according to the polarization of the electromagnetic wave according to the embodiment of the present application.
19 is a view showing an artificial structure actually implemented according to an embodiment of the present application.
FIG. 20 is a graph showing an energy absorption degree according to an incident angle of an electromagnetic wave incident on an artificial structure according to an embodiment of the present application. FIG.

It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to be illustrative of the present invention and not to limit the scope of the invention. Should be interpreted to include modifications or variations that do not depart from the spirit of the invention.

Although the terms used in the present invention have been selected in consideration of the functions of the present invention, they are generally used in general terms. However, the present invention is not limited to the intention of the person skilled in the art to which the present invention belongs . However, if a specific term is defined as an arbitrary meaning, the meaning of the term will be described separately. Accordingly, the terms used herein should be interpreted based on the actual meaning of the term rather than on the name of the term, and on the content throughout the description.

The drawings attached hereto are intended to illustrate the present invention easily, and the shapes shown in the drawings may be exaggerated and displayed as necessary in order to facilitate understanding of the present invention, and thus the present invention is not limited to the drawings.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a detailed description of known configurations or functions related to the present invention will be omitted when it is determined that the gist of the present invention may be obscured.

According to an aspect of the present invention, there is provided an artificial structure in which artificial structure cells including a first artificial structure cell and a second artificial structuring cell are disposed, the artificial structure including a first intermediate layer, a first side layer disposed on one side of the first intermediate layer, A first other layer disposed on the other side of the first intermediate layer, and a first vertical link connecting the first side layer and the first other layer, wherein the first one side layer is divided into at least one region The first opening region is formed, the first opening region of the first one side layer has a first capacitance, and the first up-and-down connecting body has the first inductance; And a second intermediate layer, a second one side layer disposed on one side of the second intermediate layer, a second other side layer disposed on the other side of the second intermediate layer, and a second side layer disposed on the other side of the second intermediate layer, Wherein the second opening layer has a second capacitance, and the second one side layer has a second capacitance, and the second one side layer has a second opening region that is divided into at least one region and the second opening region of the second one- The first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance are different from each other, and the first capacitance and the second capacitance have a second resonance frequency And an artificial structure in which a second resonance frequency is defined based on the second capacitance and the second inductance may be provided.

Also, the first opening is provided with a first dielectric, whereby the first opening has a first capacitance and the second opening has a second dielectric, whereby the second opening has a second capacitance An artificial structure may be provided.

In addition, an artificial structure having the first capacitance and the second capacitance different from each other may be provided according to a difference in electrical properties between the first dielectric and the second dielectric.

The first layer may be formed of a first material and the second layer may be formed of a second material. The first layer may be formed of a material having a different electrical characteristic from the first material, An artificial structure having a different second capacitance may be provided.

The capacitance element further includes a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor, the capacitance element including a first capacitance element and a second capacitance element, Wherein a first capacitance element is disposed in the first opening region so that the first opening region has the first capacitance and the second capacitance element is disposed in the second opening region, And the second opening region may be provided with an artificial structure having a second capacitance.

The first side layer includes a 1-1 region and a 1-2 region, and the 1-1 region has a first curved surface having a first curvature and a second curved surface having a second curvature , And the first curvature may be an artificial structure such as a second curvature.

In addition, it is preferable that the first-first region has a first plane, the first-second region has a second plane, the first plane and the second plane are opposed in parallel, A curved surface and an artificial structure connected to the second curved surface may be provided.

A first conductor is disposed on the first plane, a second conductor is disposed on the second plane, and a dielectric is disposed between the second conductor and the first conductor, An artificial structure having a first capacitance may be provided.

The first opening region includes a 1-1 opening region, a 2-1 opening region, and a 3-1 opening region, the 1-1 opening region being located at the center of the first one-side layer, The second-1 opening region is located at a peripheral portion of the first one-side layer, and the 3-1 opening region is provided between the 1-1 opening region and the 2-1 opening region .

In addition, an artificial structure in which the first capacitance is formed in the 3-1 opening region can be provided by disposing the dielectric in the 3-1 opening region.

In addition, the first up-and-down connected body is realized in a cylindrical shape and is realized by the same material as the material of the first one-side layer or the material of the second other-side layer.

In addition, the first vertically-connected body includes a first connector and a second connector, the first connector connects the first 1-1 region of the first one-side layer and the first other-side layer, And the second connector connects the 1-2 zone of the first layer and the first layer of the second layer.

In addition, an artificial structure in which the energy absorption of the electromagnetic wave is maintained at 98% or more irrespective of the polarization of the electromagnetic wave incident on the artificial structure can be provided.

Also, when the angle of incidence of the electromagnetic wave incident on the artificial structure is changed from 0 to 55 degrees, the artificial structure may be provided in which the energy of the electromagnetic wave is maintained at 90% or more irrespective of the change of the incident angle have.

According to another aspect of the present application, A first layer disposed on one side of the intermediate layer; A second layer disposed on the other side of the intermediate layer; An artificial struc- ture in which at least one artificial struc- tural cell is disposed, the artificial struc- tural cell further comprising a connector connecting the first layer and the second layer, Wherein the first region, the first region, the second region, and the opening region have a capacitance, the at least one opening region being divided into two regions, And a second connection body, wherein the first connection body connects the 1-1 zone and the second layer, the second connection body connects the 1-2 zone and the second layer, Wherein the artificial struc- tural cell comprises a first artificial struc- tural cell and a second artificial struc- tural cell, wherein the artificial struc- ture includes a first artificial struc- tural cell and a second artificial struc- tural cell, The capacitance of the artificial cell is An artificial structure in which a first resonant frequency is determined based on a capacitance of the first artificial structure cell and a second resonant frequency is determined based on a capacitance of the second artificial structured cell may be provided.

Hereinafter, the artificial structure will be described.

1. Implementation of artificial structure

The artificial structure 10 means an artificially designed structure. The artificial structure 10 may be embodied in a specific structure and / or shape so as to have physical and electrical characteristics that can not occur naturally. The materials constituting the artificial structure 10 may be selected from the group consisting of i) a simple substance composed of one element such as iron, copper or aluminum, and a pure substance containing a compound composed of two or more elements, or ii) Mixture materials may be selected.

At this time, the artificial structure 10 according to an embodiment of the present invention may be implemented to have an artificial structure capable of absorbing electromagnetic waves EM of a specific frequency band incident on the artificial structure 10 by a magnetic resonance method .

The electromagnetic wave EM absorbed by the artificial structure 10 may be absorbed in at least two frequency bands. The aspect may be in accordance with at least two or more resonance frequencies that can be set in the artificial structure (10).

Preferably, in the present application, the artificial structure 10 has an artificial structure to receive electromagnetic waves of the VHF radio band (30 to 300 MHZ). The artificial structure may be implemented so that the resonance frequency of the artificial structure becomes a frequency of the VHF radio band band (30 to 300 MHZ). The artificial structure may be implemented so that the artificial structure 10 may have an impedance value that can match an impedance of a free space (or an atmospheric space) at a frequency of a VHF radio band band (30 to 300 MHz).

Hereinafter, the artificial structure 10 in which at least two resonance frequencies described above according to the embodiment of the present application can be set will be described.

1.1 Artificial structure

1 is a view showing an artificial structure according to an embodiment of the present application.

Referring to FIG. 1, an artificial structure 10 according to an embodiment of the present application may include a plurality of artificial structure cells 1.

The artificial structure cell 1 is a concept of a unit cell constituting the artificial structure 10. The artificial struc- tural cell 1 constituting the artificial struc- ture 10 may be embodied in various shapes.

In addition, various components may be included in the artificial struc- tural cell 1. The artificial struc- tural cell 1 may have an electrical element value according to the constituent elements. The electrical element value includes a capacitance and an inductance.

The number of the artificial struc- tural cell 1 arranged per the width of the artificial struc- tural body 10 can be determined according to the width of the first other layer 24 of the struc- tured struc- tural cell 1. [ As a result, when the first side layer 24 of the artificial struc- tural cell 1 is formed as a square plate having a length of four sides, the number of the artificial struc- tural cells 1 arranged per area becomes .

By arranging the artificial struc- tural cell 1 as described above continuously, a huge artificial struc- ture 10 can be realized.

1.2 Arrangement of artificial structure cell

2 is a view showing an artificial structure cell including an artificial structure according to an embodiment of the present invention.

Referring to FIG. 2, the first artificial struc- tured structure cell 2 according to an embodiment of the present application includes a first side layer 21, a first intermediate layer 23, a first side layer 24, And may include a connector 25.

The first side layer 21 may be disposed on one side of the first intermediate layer 23.

At least one first opening region 22 may be formed in the first side layer 21. The first opening region 22 may divide the first side layer 21 into at least one region. The partitioned first side layer 21 may include a 1-1 region, a 1-2 region, a 1-3 region, and a 1-4 region.

A first layer 24 may be disposed on the other side of the first intermediate layer 23.

The first vertically connected body 25 may connect the first side layer 21 and the first other side layer 24. The first and second upper and lower link members 25-1, 25-2, 25-3, 25-3, 25-3, And may include upper and lower connectors.

The first 1-1 vertically connected body 25-1 connects the first other side layer 24 and the 1-1 zone 21-1 and the first 1-2 second body 25-2 The first and second upper layers 24 and 25-2 are connected to each other and the first and second lower layers 24 and 25-3 are connected to the first and second layers 24 and 25, And the first to fourth upper and lower connectors may connect the first other layer 24 and the 1-4th region 21-4.

The second artificial struc- tural cell 3 according to one embodiment of the present invention is provided with a second side layer 31, a second intermediate layer 33, a second side layer 34, and a second top- .

At least one second opening region 32 may be formed in the second side layer 31.

The second opening region 32 may divide the second one side layer 31 into at least one region. The second opening region 32 may divide the second one side layer 31 into at least one region. The partitioned second side layer 31 may include a 2-1 region, a 2-2 region, a 2-3 region, and a 2-4 region.

The second vertically connected body may connect the second side layer 31 and the second side layer 34. The second upper and lower link body 35 includes a second lower link member 35-1, a second lower link member 35-2, a second lower link member 35-2, a second upper link member 35-3, 2-4 Upper and Lower Connections

The 2-1 up-and-down link 35-1 connects the second other-side layer 34 and the 2-1 region 31-1, and the 2-2 up-down link 35-2 connects the 2- The second upper layer lower layer 34-3 and the second upper layer lower layer 34-3 are connected to the second other layer 34 and the second -2 region 31-2, And the second 2-4 vertically connecting body connects the second layer 34 and the second 2-4 region 31-4.

The artificial structure cells 1 can be set with electrical element values, which include the capacitance and the inductance. The first opening region 22 of the first artificial structure cell 2 according to an embodiment of the present application may have a first capacitance. In addition, the second opening region 32 of the second prosthesis cell 3 according to an embodiment of the present application may have a second capacitance. In addition, each of the components included in the first artificial struc- tural cell 2 and each of the components included in the second artificial struc- tural cell 3 may have an inductance. The capacitance and the inductance will be described later in detail.

The resonance frequency of the artificial structure cell can be determined based on the electrical element value of each artificial structure cell 1. [ The first artificial struc- tural cell 2 may have a first resonant frequency based on an electrical element value of the first artificial struc- tural cell 2. [ The second artificial struc- tural cell 3 may have a second resonant frequency based on the electrical element value of the second artificial struc- tural cell 3. [ Therefore, the artificial structure in which the artificial structure cells are disposed can have the first resonant frequency and the second resonant frequency.

The first resonance frequency and the second resonance frequency may be set to different values. Based on the first and second resonance frequencies, the artificial structure can absorb electromagnetic waves of a plurality of frequency bands incident on the artificial structure.

Meanwhile, the first resonance frequency and the second resonance frequency may be different from each other according to the change of the electrical element value included in each artificial structure cell. That is, as the first capacitance and the second capacitance change, the first artificial struc- tural cell 2 and the second artificial struc- tural cell 3 may have different resonant frequencies. The resonance frequency set according to the change of the electric element value of the artificial structure cell and the electric element value will be described later in detail.

Hereinafter, the structure of the artificial struc- tural cell 1 constituting the artificial struc- ture 10 will be described in detail. The structures of the first artificest structure cell 2 and the second artificial structure cell 3 are similar. Therefore, for ease of explanation, the first artificial struc- tural cell 2 will be described below as an example.

1.2.1 First layer

The first side layer 21 according to an embodiment of the present invention may be made of a material through which a current can be conducted. For example, the first side layer 21 may be formed of a predetermined metal material. Since the first side layer 21 can form a current, the first side layer 21 is formed with the electromagnetic wave EM incident on the first side layer 21 based on the induced current phenomenon A current can flow. The current formed in the first side layer 21 will be described later.

FIG. 3 is a schematic diagram illustrating a first side layer according to an embodiment of the present application. FIG.

을 갖도록 구현될 수 있다.Referring to FIG. 3, the first side layer 21 may have a predetermined thickness. For example, the first side layer 21 may have a thickness

. ≪ / RTI >

The first side layer 21 may be implemented in various external shapes. The meaning of the various external shapes means a shape of the first side layer 21 before the opening region is formed when a first opening region 22 to be described later is formed in the first side layer 21 do.

The shapes of the polygons such as the circular shape, the semicircular shape and the rectangular shape, or the combination of the polygons may be selected as the outer shape of the first side layer 21.

,

,

,

로 구현될 수 있다. 이때 상기

과

은 같은 값으로 선택될 수도 있고, 다른 값으로 선택될 수도 있다.The various external shapes may have a predetermined size. When a rectangular shape is selected as the outer shape of the first side layer 21, the rectangular first side layer 21 has a length of four sides

,

,

,

. ≪ / RTI > At this time,

and

May be selected to the same value, or may be selected to other values.

Referring again to FIG. 3, a first opening region 22 may be formed in the first side layer 21 according to an embodiment of the present invention. As the first opening region 22 is formed in the first side layer 21, the first intermediate layer 23 may be exposed through the first opening region 22.

The first opening region 22 may be formed in various shapes.

The shapes of the various polygons such as the circular shape, the semicircular shape, and the rectangular shape, or the combination of the polygons may be selected as the shapes of the regions.

The size of the first opening region 22 may be determined in various sizes depending on the purpose of implementation. For example, when the first opening region 22 is circular, the first opening region 22 may be formed as a circle having a radius r. In addition, when the first opening region 22 has a rectangular shape, the first opening region 22 may have a square shape with four sides having a length d.

The first opening region 22 includes a first opening region 22-1, a first opening region 22-2, a first opening region 22-3, An opening region can be formed.

를 갖는 원 형상으로 상기 제1 일측레이어(21)의 중심부에 형성될 수 있다. 상기 제1-2 개구영역(22-2)은 반지름

을 갖는 반원 형상으로 상기 제1 일측레이어(21)의 주변부에 형성될 수 있다. 상기 제1-3 개구영역(22-3)은 변의 길이 d를 갖는 정사각 형상으로 상기 제1-1 개구영역(22-1) 및 제1-2 개구영역(22-2) 사이에 위치하도록 형성될 수 있다.Accordingly, the 1-1 opening region 22-1 has a radius

The first side layer 21 and the second side layer 21 may be formed in the shape of a circle. The 1-2 opening region 22-2 has a radius

The first side layer 21 may be formed in a semicircular shape. The first to third opening regions 22-3 are formed to be positioned between the first-first opening region 22-1 and the first-second opening region 22-2 in a square shape having a side length d .

As shown in FIG. 2, the plurality of first opening regions 22 formed in the first side layer 21 may be connected to each other. The first to third opening regions 22-3 and 22-3 are formed in the first opening region 22-1 and the first opening region 22-3, And a region 22-2 may be connected.

The first side layer 21 according to an embodiment of the present invention may include a plurality of regions. Referring again to FIG. 3, the plurality of regions may be defined by the aperture regions described above. The first 1-1 opening region 22-1, the 1-2th opening region 22-2, and the 1-3th opening region 22-3 are connected to the first side layer 21 The first side layer 21 includes a first 1-1 zone 21-1, a 1-2 zone 21-2, a 1-3 zone 21-3, a 1-4 And the region 21-4.

The plurality of regions may be implemented in various external shapes.

The shapes of the various polygons such as the circular shape, the semicircular shape, and the rectangular shape, or the combination of the polygons may be selected as the shapes of the regions.

Referring again to FIG. 3, each of the regions may have curved surfaces of various curvatures. The curved surface may be defined by the first opening area 22 described above.

When a plurality of curved surfaces are formed, the curved surface may include a first curved surface 211 and a second curved surface 212. 2, the first curved surface 211 may be formed by the aforementioned first 1-1 opening region 22-1, and the second curved surface 212 may be formed by the above- May be formed by the region 22-2.

When the curvature of the first curved surface 211 is referred to as a first curvature and the curvature of the second curved surface 212 is referred to as a second curvature, the first curvature and the second curvature may be different values, have.

Referring again to FIG. 3, each of the regions may have a plane defined in the opening region. As each of the first to third opening regions 21-3 is formed, each of the regions may have a plane.

In addition, it is also possible to set the first to fourth regions 21-1, 21-2, 21-3, The planes may have positional relationships that are parallel to and opposite to each other.

Referring again to FIG. 3, it can be seen that the first plane of the plane included in the 1-1 zone and the second plane of the plane included in the 1-2 zone have a positional relationship parallel to each other .

전술한 제1-1 영역(21-1), 제1-2 영역(21-2), 제1-3 영역(21-3), 및 제1-4 영역(21-4) 사이에 존재하여 d 만큼 각 영역을 이격시킨다는 의미를 함축하고 있다.Meanwhile, the first to third opening regions 22-3 may be referred to as a gap. The gap is formed by the above-mentioned first to third opening regions 22-3

Is present between the above-described first 1-1 zone 21-1, the 1-2 zone 21-2, the 1-3 zone 21-3, and the 1-4 zone 21-4 d, respectively.

Meanwhile, as shown in FIG. 3, the first side layer 21 may be implemented as a symmetrical structure. When the first side layer 21 is formed in a symmetrical structure, electromagnetic waves can be absorbed regardless of the polarization of electromagnetic waves incident on the first artificial structure cell 2. [

1.2.2 First intermediate layer

The first intermediate layer 23 according to an embodiment of the present invention may be formed of a material different from the first side layer 21 and the first side layer 24 described later. The first intermediate layer 23 may be formed of a material that does not conduct current. The first intermediate layer 23 may be a region in which an induced magnetic field (IEM) is formed.

The first intermediate layer 23 according to one embodiment of the present invention may be formed in a predetermined shape. Hereinafter, the shape that the first intermediate layer 23 can have will be described.

4 is a schematic diagram showing a first intermediate layer according to one embodiment of the present application.

Referring to FIG. 4, the first intermediate layer 23 according to one embodiment of the present application may be realized in a plate shape.

을 가지는 판 형상으로 구현될 수 있다. The first side layer 21 has a thickness

As shown in Fig.

The plate shape may be realized as a plate shape of various polygons such as a disk shape, a semi-circular plate shape, a rectangular plate shape, or a plate shape in which the polygon is combined. For example, when the first intermediate layer 23 is formed in a rectangular plate shape as shown in FIG. 3, the rectangular plate shape may have the same rectangular shape with four sides a1, a1, a2, and a2. At this time, a1 and a2 may have the same value or different values.

In the first intermediate layer 23, an intermediate layer through hole penetrating the first intermediate layer 23 may be formed.

The shape of the intermediate layer through hole may be various polygonal shapes such as a circular shape, a semicircular shape, a rectangular shape, or a combination of the polygons. The size of the intermediate layer through-hole shape may be set to various sizes such as a diameter d.

The shape of the intermediate layer through hole may be various polygonal shapes such as a circular shape, a semicircular shape, a rectangular shape, or a combination of the polygons. The size of the intermediate layer through-hole shape may be set to various sizes such as a diameter d.

A plurality of intermediate through holes may be formed in the first intermediate layer 23. The intermediate layer through hole may include a first intermediate layer through hole 231, a second intermediate layer through hole 232, a third intermediate layer through hole 233, and a fourth intermediate layer through hole 234. The plurality of intermediate layer through holes may have different shapes.

The intermediate layer through hole allows the first upper and lower link members 25 to pass through the intermediate layer to connect the upper layer and the lower layer. For example, the first vertical connection body 25-1 may connect the first 1-1 region 21-1 and the first other-side layer 24 through the first intermediate layer through-hole 231 The second upper and lower connected body 25-2 can connect the first 1-2 region 21-2 and the first other layer 24 through the second intermediate layer through hole 232, The upper and lower link members 25-3 can pass through the third intermediate layer through holes 233 to connect the first to third regions 21-3 and the first other side layer 24, Through the fourth intermediate layer through hole 234 to connect the first to fourth area 21-4 and the first other layer 24 with each other.

1.2.3 First layer

The first other layer 24 according to an embodiment of the present invention may be implemented as a material through which a current is passed. A current can flow through the first other layer 24 by the electromagnetic wave EM that is incident on the first artificial structure cell 2.

The first layer 24 may be formed in a predetermined shape according to an embodiment of the present invention. Hereinafter, the shape that the first other layer 24 can have will be described.

5 is a schematic diagram showing a first other layer according to an embodiment of the present application.

Referring to FIG. 5, the first layer 24 according to an embodiment of the present invention may be realized in a plate shape.

을 가지는 판 형상으로 구현될 수 있다.The first other layer (24) has a thickness

As shown in Fig.

The plate shape may include plate shapes of various polygonal shapes such as a disk shape, a semi-circular plate shape, and a rectangular plate shape, or a plate shape having a combination of the polygons. 5, when the first other layer 24 is implemented in a rectangular plate shape, the rectangular plate shape may have a rectangular shape with four sides having b ₁ , b ₁ , b ₂ , b ₂ , Lt; / RTI > Here, b ₁ and b ₂ may have the same value or different values.

In addition, a plurality of the plate shapes may be realized to constitute the first side layer 21.

On the other hand, the size of the first other layer 24 may define the arrangement density of the first artificial struc- tural cell 2. The batch density means the number of the first artificial structure cells 2 per unit area of the first artificial struc- tured structure cell 2 when the first artificial struc- tural cell 2 is disposed.

For example, the batch density may be defined based on the first layer 24. For example, the smaller the area of the first other layer 24, the larger the batch density.

In another example, when the first other layer 24 is formed in a square shape, the arrangement density may be increased as the length of the side of the first other layer 24 is smaller. Referring again to FIG. 4, as b ₁ and b ₂ become smaller, the number of the first artificial struc- tural cell 2 per unit area increases.

1.2.4 First up-and-down connector

The first vertical link 25 according to an embodiment of the present invention may be implemented to connect the first layer 21 and the first layer 24 to each other. The first vertically connected body 25 may be realized as a material through which a current is passed. The same material as that of the first side layer 21 and the first side layer 24 may be selected as materials for realizing the first and second connected bodies 25.

6 is a schematic view showing a first up-and-down connected body according to an embodiment of the present application.

Referring to FIG. 6, the first vertical link 25 according to one embodiment of the present application may be implemented as a column. The columnar shape may include columnar shapes of various polygonal shapes such as a cylindrical shape, a semicircular columnar shape, and a square columnar shape, or a columnar shape of a combination of the polygonal shapes.

When the first up-and-down connected body 25 is implemented as a column, the inside of the column may be empty according to the purpose.

As described above, the first upper and lower connected body 25 may be configured such that the first side layer 21 and the first side layer 24 are connected to each other. The first upper and lower connected body 25 is constructed such that the first side layer 21 and the first other side layer 24 are connected to each other so that the electrical element value (particularly, the inductance) of the first artificial structure cell 2 is It becomes possible to change dramatically. This will be described concretely with the equivalent circuit of the first artificial struc- tural cell 2.

As the electromagnetic wave EM is incident on the first artificial struc- tural cell 2, a current can flow through the first vertically-connected body 25. The current that can flow through the first vertically connected body 25 will be described later in detail.

1.2.5 Capacitance and Inductance

On the other hand, each component of the above-described first artificial struc- tural cell 2 may have an electrical element value.

The electrical element value may include a capacitance and an inductance.

The capacitance may be formed in a structure in which a workpiece in which current is not conducted between the workpieces through which the two currents pass is disposed. Hereinafter, in order to facilitate the explanation, it is assumed that the material through which the current passes is a metal, and the material in which the current is not conducted is a dielectric material.

Meanwhile, the capacitance can be changed according to the shape and properties of the metals and the dielectric, which are well-known facts, so that the description thereof will be omitted.

The capacitance may be a fixed capacitance whose capacitance does not change, or a variable capacitance whose capacitance changes.

The capacitance may be determined by varying the material that is not energized by the current used to be implemented so that the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance of the capacitance, Or electrolytic capacitance, and the like.

Each component of the above-described first artificial structure cell 2 may have the capacitance.

For example, the first to third opening regions 22-3 (or the gaps 22-3) of the first side layer 21 are filled with a material that does not pass a current, -3) may have a capacitance.

Specifically, the first 1-1 zone 21-1 and the 1-2 zone 21-2 of the first side layer 21 may be formed of metal, and the 1-3th aperture 22- 3, the first-first region 21-1, the first-second region 21-2, and the first-third opening region 21-3 are formed of a dielectric material so that a capacitance can be formed Structure.

Further, a capacitance element having a capacitance may be separately provided in the first to third opening regions 22-3, and the first to third opening regions 22-3 may have a capacitance. The capacitance element means an element of a structure including a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor (i.e., a structure capable of having a capacitance).

In the case where a capacitance is formed in the structure of the first artificial struc- tural cell 2, when the voltage applied to the above configuration is high, the above-mentioned configuration collects the charge (electrostatic charge), and when the voltage applied to the above- (Discharging) the discharge gas. The amount of charge related to the electrostatic and / or discharging function may increase as the capacitance increases.

An inductor according to one embodiment of the present application may be implemented to have a predetermined electrical element value. The electrical element value may include an inductance (L).

The inductance may be formed on the conductor of the first artificial structure cell (2). The inductance may be changed according to the shape, property, or the like of the conductor, which is a well-known fact and will not be described.

The first side layer 21, the first upper side connector 25, and the first side layer 24, which are constituent elements of the first artificial structure cell 2 having the above-mentioned current passing property, Lt; / RTI >

For example, the first-first region 21-1, the first-second region 21-2, the first-third region 21-3, and the first- 4 region 21-4 may have an inductance.

Also, the first to fourth upper and lower connecting bodies 25-1, 25-2, 25-3, 25-3, Can have an inductance.

In addition, the first layer 24 may have an inductance.

The first one side layer 21, the first upper side connector 25 and the first other side layer 24 are formed as one conductor integrated by being connected to each other, Lt; / RTI > That is, since the first upper and lower connected body 25 is provided in the first artificial structure cell 2, the first artificial structure cell 2 can have the inductance of the integrated one conductor. The first artificial struc- ture cell (2) of the present application having the same size as the first artificial struc- tural cell (2) in which the first up-and-down connected body (25) 2 is lowered. The calculation of the resonance frequency will be described later in detail.

When a current flows in the structure of the first artificial struc- tured structure cell 2 having the inductance, the conductive structure may function to temporarily store electromagnetic energy in the form of a magnetic field (IEM). The function of temporarily storing the electromagnetic energy is a well-known function, and a detailed description thereof will be omitted. The amount of energy related to the function of temporarily storing the electromagnetic energy may increase as the inductance increases.

Hereinafter, for ease of explanation, the configuration of the first artificial struc- tural cell 2 having a capacitance is referred to as a capacitor and the configuration of the first artificial struc- tural cell 2 having an inductance is referred to as an inductor.

The resonance frequency of the first artificial structure cell 2 may be determined according to the electrical element value.

Hereinafter, an equivalent circuit of the first artificial struc- tural cell 2 will be described.

1.3 Equivalent circuit of artificial cell

Mentioned resonance frequency can be defined according to the electrical element value of the first artificial structure cell 2 described above.

A resonance frequency may be set so that the first artificial struc- tured cell 2 according to an embodiment of the present invention can resonate with the electromagnetic wave EM incident on the first artificial struc- tural cell 2. [

As described above, the first artificial structure cell 2 according to an embodiment of the present application may be replaced with an equivalent circuit represented by an electrical element. The equivalent circuit is an illustration showing the serial and parallel connection of the electrical elements of the first artificial struc- tural cell 2 described above.

7 is a view showing an electrical equivalent circuit of the above-described artificial structure cell according to an embodiment of the present application.

7, the electrical elements included in the equivalent circuit include a capacitor (electrical element value = capacitance C), an inductor (electrical element value = inductance L), and a predetermined resistance (electrical element value = impedance Z) can do.

Referring to FIGS. 2 and 7, the first to third opening regions 22-3 formed in the first side layer 21 may have a capacitor C.

The first-first region 21-1, the first-second region 21-2, the first-third region 21-3, and the first- 4 region 21-4 may have an inductance L1. A first first upper and lower link body 25-1, a second first upper and lower link body 25-2, a third first upper and lower link body 25-3, a plurality of first upper and lower link members 25, And the fourth first up-and-down connected body may have an inductance L2. The first other layer 24 may have an inductance L1.

As described above, the first side layer 21, the first other side layer 24, and the first upper and lower connected body 25 may be physically connected and electrically connected. Accordingly, the electrical elements of each constitution of the first artificial struc- tural cell 2 can be replaced by an equivalent circuit as shown in Fig. 7 by making an electrical connection in series and parallel relation.

7, the inductance L1 of the first side layer 21 and the inductance L1 of the first side layer 24 are shown to be the same values. However, this is only an example, The inductances of the first layer 21 and the first layer 24 may be set to different values.

Hereinafter, the relationship between the electric element value of the first artificial struc- tural cell 2 and the resonant frequency will be described with reference to mathematical expressions.

[Equation 1]

&Quot; (2) "

은 공진주파수, L은 인덕터의 인덕턴스 값, C는 커패시터의 커패시턴스 값을 의미한다.In Equation (1)

L is the inductance of the inductor, and C is the capacitance of the capacitor.

은 공진주파수

에서의 임피던스 값,

은 공진주파수

에서의 임피던스의 허수값을 의미한다.In Equation (2)

The resonance frequency

The impedance value at < RTI ID =

The resonance frequency

Lt; RTI ID = 0.0 > impedance < / RTI >

은 제1 인공구조체셀(2)의 등가회로가 포함하는 인덕턴스 L 및 커패시턴스 C의 값에 반비례하는 것을 알 수 있다.Referring to Equation (1), the vacuum frequency of the first artificial structure cell (2)

Is inversely proportional to the value of the inductance L and the capacitance C included in the equivalent circuit of the first artificial struc- tural cell 2.

이 간접적으로 도출될 수 있다. 제1 인공구조체셀(2)의 등가 회로의 각 주파수마다의 임피던스

이 계산되는 경우, 상기 임피던스의 허수부(Im)가 0이 되는 특정 주파수를 연산할 수 있다. 상기 특정 주파수는 공진주파수

이 된다.Referring to Equation 2, the impedance Z of the equivalent circuit of the first artificial structure cell 2 is calculated,

Can be derived indirectly. The impedance of each frequency of the equivalent circuit of the first artificial struec- tor cell 2

It is possible to calculate a specific frequency at which the imaginary part Im of the impedance becomes zero. The specific frequency is a resonant frequency

.

7, the first capacitance C1 of the first artificial struc- ture cell 2 and the second capacitance C2 of the second artificial struc- tural cell 3 according to the embodiment of the present invention are different from each other . Thus, the first artificial struc- tural cell 2 has a first resonant frequency based on the first capacitance C1 and the second artificial struc- tural cell 3 has the second resonant frequency C2 based on the second capacitance C2, Frequency.

Each artificial structure cell 1 may be implemented so that the first capacitance C1 and the second capacitance C2 may be formed at different values. This will be described later in detail.

1.3.1 Capacitance Operation

)는

의 계산값으로 결정될 수 있다.When a capacitor is formed in the first artificial structure cell 2 such that the capacitor has a series electrical connection relationship, the inverse number of the capacitance of the first artificial structure cell 2 is equal to the inverse of the capacitance of each of the plurality of capacitors Is calculated as the sum of the reciprocals of the electric elements. The reciprocal of the capacitance of the first artificial struc- tural cell (2)

)

As shown in FIG.

)는

의 계산값으로 결정될 수 있다.When a capacitor is formed in the first artificial structure cell 2 such that the capacitor can be replaced by a parallel equivalent circuit, the capacitance of the first artificial structure cell 2 is set such that the capacitance of the electrical element of the plurality of capacitors Value. Referring to FIG. 7 (b), the capacitance of the first artificial struc- tural cell 2

)

As shown in FIG.

When a capacitor is formed in the first artificial struc- tural cell 2 so that the capacitor can be replaced with a series / parallel equivalent circuit, the electric element of the first artificial struc- tural cell 2 is connected to the above- / ≪ / RTI > parallel capacitor.

1.3.2 Inductance Operation

The inductors formed in the first artificial struc- tural cell 2 according to an embodiment of the present application may be arranged such that the inductors formed in the first artificial struc- tural cell 2 have i) a series connection relationship, ii) a parallel connection relation, and / or iii) Can be implemented in the first artificial structure cell (2).

)는

으로 결정될 수 있다.When the inductor is formed in the first artificial struc- tural cell (2) so that the inductor can be replaced with a serial equivalent circuit, the electrical element of the first artificial struc- tory cell (2) Element values. For example, the inductance of the first artificial struc- tural cell 2

)

. ≪ / RTI >

)는

으로 결정될 수 있다.When an inductor is formed in the first artificial struc- tural cell (2) so that the inductor can be replaced by a parallel equivalent circuit, the inverse number of the electric element of the first artificial struc- tory cell (2) The sum of the reciprocals of the respective electric elements of the electrode. For example, the inverse number of the inductance of the first artificial struc- tural cell (2)

)

. ≪ / RTI >

When the inductor is formed in the first artificial struc- tural cell (2) so that the inductor can be replaced with a series / parallel equivalent circuit, the electrical element of the first artificial struc- tural cell (2) / ≪ / RTI > parallel inductor.

1.4 Changing Capacitance

Hereinafter, examples of changing the capacitance of the first artificial struc- tural cell 2 will be described in order to implement the capacitance of each artificial struc- tural cell 1 disposed in the artificial struc- ture 10 differently. Although the following embodiments are described by taking the first artificial structure cell 2 as an example, the embodiments can be applied to all the other artificial structure cells 1. [

The material used in the implementation of the capacitor may be differently used so that the capacitance of the first artificial struc- tured cell 2 according to an embodiment of the present invention is changed. The capacitance value can be easily changed without changing the shape of the first artificial structure cell 2 when the capacitance value is changed in such a manner that the material used for implementing the capacitor is different. As the shape is not changed, the optical characteristics of the electromagnetic wave incident on the artificial structure 10 can be maintained unchanged.

For example, when the conductor material that implements the first layer of the first artificial struc- tural cell 2 is the first material, the conductor material that implements the first layer of the second artificial struc- tural cell 3 is the second Can be selected as material. As the conductive material for implementing the first side layer is selected differently, the capacitance of the third opening region of the first side layer of each artificial structure cell may be varied.

Alternatively, the diaphragm for realizing the capacitor of the first artificial struc- tural cell (2) and the second artificial struc- tural cell (3) may be selected differently, and the capacitances may be set to different sizes.

The dielectric can be an air dielectric, a vacuum dielectric, a gas pressure dielectric, a liquid dielectric, a mica dielectric, a paper dielectric, a metallized paper dielectric, a magnetic dielectric, an organic film dielectric, and / or an electrolytic dielectric.

In addition, by varying the configuration of the capacitor, the capacitance of the first artificial structure cells 2 constituting the artificial structure 10 can be set differently.

The size of the gap between the conductor of the first layer 21 of the capacitor of the first artificial structure cell 2 and the conductor of the first layer 24 of the second artificial struc- The artificial structure 10 in which the artificial structure cells having different capacitances are arranged can be realized by making the gap between the conductor of the first side layer 21 and the conductor of the first side layer 24 different from that of the conductor.

The area of the conductor of the first layer 21 of the first artificial structure cell 2 and / or the conductor of the first layer 24 of the second artificial struc- May be implemented differently from the area of the conductor (21) and / or the conductor of the first other layer (24).

In addition, by varying the types of the capacitors to be implemented, the capacitance of the first artificial structure cells 2 constituting the artificial structure 10 can be set differently.

For example, a first capacitance element having the first capacitance as described above may be disposed in the gap of the first artificial structure cell, and a second capacitance element having the second capacitance may be disposed in the gap of the second artificial structure cell .

2. Electromagnetic wave absorption behavior of artificial cell

Hereinafter, the electromagnetic wave (EM) absorption operation performed by the first artificial struc- tural cell 2 will be described.

According to an embodiment of the present invention, the first artificial structure cell 2 implemented based on the above-described embodiments performs an electromagnetic wave absorbing operation for absorbing the electromagnetic wave incident on the first artificial structure cell 2 .

8 is a view showing electromagnetic waves incident on an artificial structure cell according to an embodiment of the present application.

, 및 입사각도

로 전술한 제1 인공구조체셀(2)에 입사될 수 있다.Referring to FIG. 8, the electromagnetic wave according to an embodiment of the present application has a polarization angle

, And incident angle

Can be incident on the first artificial structure cell 2 described above.

The polarized light may include magnetic field (IEM) polarized light, and electric field polarized light.

The incidence angle is an angle formed between the propagation direction vector k of the electromagnetic wave and the vertical direction vector h of the artificial structure as shown in FIG.

The electromagnetic wave may be an electromagnetic file containing a frequency of a certain band.

On the other hand, absorbing the electromagnetic wave means absorbing the energy contained in the electromagnetic wave. In addition, the meaning of the electromagnetic wave absorbing operation is not limited to the fact that the first artificial struc- tural cell 2 performs an active operation for absorbing the electromagnetic wave, but the physical component implemented in the first artificial struc- tural cell 2, It should be interpreted as a passive meaning that the electromagnetic wave is absorbed by the electromagnetic wave.

The absorption of the electromagnetic wave means that the electromagnetic wave of the entire frequency band of the electromagnetic wave can be absorbed but the energy of the electromagnetic wave of the specific frequency band or the specific frequency can be absorbed relatively more than the energy of the electromagnetic wave of the other frequency band can do.

The above-described electromagnetic wave absorbing operation may include an induction current generating operation, a magnetic field (IEM) forming operation, and an electromagnetic wave absorbing operation.

Hereinafter, each operation will be described in detail.

2.1 Induced Current Formation

An induced current may be formed in the first artificial struc- tured cell 2 according to an embodiment of the present invention by an electromagnetic wave incident on the first artificial struc- tural cell 2. [

9 is a conceptual diagram showing an example in which an induction current is formed according to an embodiment of the present application.

As shown in FIG. 9, when an electromagnetic wave is incident on the first artificial struc- tural cell 2, it can be seen that an induction current can be formed in each component included in the first artificial struc- tural cell 2 in accordance with the electromagnetic induction phenomenon .

The shape of the induction current shown in FIG. 9 is merely an example.

Hereinafter, the induced current formed in the first artificial struc- tural cell 2 will be described in detail. In the following description, the electromagnetic wave is incident on the first layer 21 of the first artificial struc- tural cell 2 in order to facilitate explanation. However, the source of the electromagnetic wave can be formed at various positions, and the electromagnetic wave can be incident on various elements of the first artificial structure cell 2 at various incident angles and at different angles of polarization.

The forming direction of the induction current may include various shapes such as a torus shape, a straight shape, and the like.

When the first layer 21 of the physical structure of the first artificial struc- tural cell 2 is realized as a plate, a toric current can be formed as shown in Fig. 9 as the electromagnetic wave is incident .

In the case where the first side layer 21 is implemented in a plate shape of a divided region, a shape of an induced current formed in each of the regions may be a form of a path of a current in each of the regions.

When the first upper and lower body 25 is implemented in the first artificial structure cell 2, an induction current may be formed in the first upper and lower body 25. The induction current formed in the first vertically connected body 25 may be a current directly induced by electromagnetic waves incident on the first artificial structure cell 2 or may be a current induced in the first side layer 21 Or may be an induced current indirectly formed by acting as an intermediate path for the current to move to the first other layer 24.

The shape of the induction current formed in the first vertically connected body 25 may be various shapes as described above.

The induction currents of various shapes described above may be formed on the first layer 24 of the first artificial structure cell 2.

Meanwhile, the intensity of the induction current formed in the first artificial struc- tured cell 2 may vary according to the equivalent circuit of the first artificial struc- tural cell 2 described above. The intensity of the induced current induced in the first artificial struc- tural cell 2 may be varied according to the electrical element value included in the equivalent circuit.

For example, when the impedance of the equivalent circuit increases, the intensity of the induced current induced in the first artificial struc- tural cell 2 can be reduced. In the case of the first artificial structure cell 2 at the resonance frequency, the intensity of the induced current induced in the cell can be increased.

2.2 Formation of magnetic field (IEM)

Hereinafter, an induced magnetic field (IEM) formed by the first artificial struc- tural cell 2 will be described.

An induced magnetic field (IEM) may be formed in the first artifact structure cell 2 according to an embodiment of the present invention.

10 is a conceptual diagram illustrating a magnetic field (IEM) formed in an artificial structure cell according to an embodiment of the present application.

Referring to FIG. 10, a magnetic field (IEM) may be formed around the first artificial struc- tural cell 2 by a current formed in the first artificial struc- tural cell 2.

The direction of the magnetic field (IEM) formed according to the direction of the formed current can be determined. It can be seen that a magnetic field (IEM) is formed in a direction perpendicular to the direction of the current as shown in Figs. 10 (a) and 10 (b).

For example, as shown in Figs. 10 (a) and 10 (b), the direction of the current formed in the first layer 21 of the first artificial struc- tural cell 2 is formed in one direction, The direction of the current formed in the first other layer 24 may be formed in the other direction in one direction. When a current is generated in the first layer 21 and the first layer 24 of the cell as described above, a magnetic field (IEM) may be formed in the first intermediate layer 23 of the cell.

(H = 자기장(IEM)의 세기, I = 코일에 흐르는 코일 전류)라는 관계식에 따라, 상기 전류의 세기에 비례한 크기로 결정될 수 있다.The intensity of the generated magnetic field (IEM) may be proportional to the intensity of the current formed in the first artificial structure cell (2). That is, the intensity of the formed magnetic field (IEM)

(H = intensity of a magnetic field (IEM), I = coil current flowing in a coil), which is proportional to the intensity of the current.

The intensity of the formed magnetic field (IEM) may be set to a different value for each frequency of the frequency band included in the magnetic field (IEM). The intensity of the magnetic field (IEM) may be a maximum intensity value at the above-mentioned resonance frequency.

On the other hand, the current formed in the first artificial struc- tural cell 2 may be an induction current generated when the electromagnetic wave is incident on the first artificial struc- tural cell 2. That is, a magnetic field (IEM) may be formed in the first artificial struc- tural cell 2 by electromagnetic waves incident on the first artificial struc- tural cell 2. [

2.3 Electromagnetic absorption

The first artificial struc- tured structure cell 2 according to an embodiment of the present invention can absorb energy of electromagnetic waves incident on the first artificial struc- tural cell 2. [

The magnetic resonance phenomenon is a phenomenon caused by matching the electrical properties of the first artificial struc- tural cell 2 and the electromagnetic properties of the incident electromagnetic waves.

The magnetic resonance phenomenon may include an impedance matching phenomenon and an electromagnetic wave resonance phenomenon.

 The matching of the mutual electrical properties may occur at a resonant frequency that can be calculated in an equivalent circuit. As the mutual electrical properties are matched, the energy of the electromagnetic wave of the resonance frequency included in the electromagnetic wave can be absorbed most efficiently in the first artificial structure cell 2.

Hereinafter, the phenomena included in the magnetic resonance phenomenon will be described in detail.

2.3.1 Impedance Matching

According to the impedance matching phenomenon, the first artificial structure cell 2 according to one embodiment of the present application can absorb the electromagnetic wave.

Hereinafter, the meaning of the impedance matching phenomenon will be described.

11 is a conceptual diagram showing impedance matching according to an embodiment of the present application.

)와 상기 인공 구조체의 임피던스(

)가 같아지는 것임을 알 수 있다.11, the impedance matching according to an embodiment of the present application is based on an impedance of a space in which an electromagnetic wave propagates before being incident on the first artificial structure cell 2

And the impedance of the artificial structure

) Are equal to each other.

As described above, each electrical element value of the electrical element can be derived by calculating in accordance with the serial, parallel, and / or serial / parallel calculation methods described above.

)는 전술한 인공 구조체에 형성되는 전기적 요소의 전기 요소 값에 따라 결정될 수 있다. As described above, the impedance of the artificial structure

) Can be determined according to the electric element value of the electric element formed in the above-described artificial structure.

As a result, absorbing the energy of the electromagnetic wave according to the impedance matching phenomenon according to one embodiment of the present application means that i) the impedance of the first artificial structure cell 2 at a specific frequency is determined to be the same impedance as the impedance of the free space , and ii) the energy of the electromagnetic wave at the specific frequency among the frequencies included in the electromagnetic wave is most efficiently absorbed by the first artificial structure cell 2.

The phenomenon in which the energy of the electromagnetic wave is absorbed most efficiently at the specific frequency is caused by the maximum power transfer theory that the power of the power source connected to the line is maximally transferred to the load when the impedance of the line becomes equal to the impedance of the load It can be backed up.

2.3.2 Electromagnetic Wave Resonance

According to the electromagnetic wave resonance phenomenon, the first artificial structure cell 2 according to one embodiment of the present application can absorb the electromagnetic wave.

9 and 10, the first artificial struc- tural cell 2 can absorb the incident electromagnetic wave by a magnetic field (IEM) formed in the first artificial struc- tural cell 2. [

As described above, an induction current may be formed in each physical component of the first artificial structure cell 2.

As described above, an induced magnetic field (IEM) can be formed around the physical components of the first artificial structure cell 2 by the induced current and / or current.

As a result, the energy of the electromagnetic wave can be absorbed as the generated magnetic field (IEM) is associated with the incident electromagnetic wave. Particularly, as the intensity of a magnetic field (IEM) formed in the first artificial structure cell 2 becomes maximum at the resonance frequency of the first artificial structure cell 2, Can be maximally absorbed into the single artificial structure cell (2).

3. Electromagnetic wave absorption method

Hereinafter, a series of processes related to the electromagnetic wave absorption operation performed by the artificial structure cell 1 will be described.

12 is a flowchart showing a diagnostic method according to an embodiment of the present application.

12, the electromagnetic wave absorption operation may include electromagnetic wave incidence S1210, induction current formation S1220, magnetic field (IEM) formation (S1230), and electromagnetic wave absorption (S1240). Steps S1210 to S1240 may all be performed, but not all of steps S1210 to S1240 are necessarily performed at all, and only at least one of steps S1210 to S1240 may be performed.

In the following, each step will be described in detail.

In the electromagnetic wave incidence step S1210, electromagnetic waves having various frequency bands can be incident on the artificial structure cell 1 described above.

In the induced current forming step S1220, an induced current may be formed in the artificial struc- tural cell 1 by the electromagnetic wave incident on the artificial struc- tural cell 1. [

In the magnetic field (IEM) formation step S1230, the induction current formed in the artificial struc- tural cell 1 may cause the induction magnetic field IEM to be formed around the artificial struc- tural cell 1.

In the electromagnetic wave absorbing step S1240, the energy of an electromagnetic wave having a resonance frequency incident on the artificial structure cell 1, based on the resonance frequency determined according to the electrical element value of the artificial structure cell 1, (1) can be absorbed.

4. Concrete examples and experimental examples

4.1 Artificial Structure Cell

Hereinafter, an example of a concrete implementation of the shape of the artificial struc- tural cell 1 (hereinafter, the artificial struc- tural cell 1) according to the implementation of the physical components included in the artificial struc- tural cell 1 will be described.

4.1.1 Implementation Example

3, the artificial struc- tural cell 1 includes a first side layer 21, a first intermediate layer 23, a first other side layer 24, The layer 21 and the first other layer 24 may be implemented as a first vertically coupled body 25.

Hereinafter, with reference to FIG. 3 to FIG. 6, a specific implementation example of the shape of the first artificial structure cell 2 according to the implementation of the physical components included in the first artificial structure cell 2 will be described .

The first side layer 21 may be formed in a square plate shape having a width w1 of 33 mm, a width w2 of 33 mm, and a thickness tm of 0.036 mm.

The divided region is formed with a circular first 1-1 opening region 22-1 having a radius of 7.8 mm at the central portion of the first one side layer 21 and a first 1-1 opening region 22-1 Shaped first to third opening regions 22-3 having a side length of 1.6 mm in each of upper, lower, left, and right sides of the first opening region 22-3, and a semi-circular shape having a radius of 7.8 mm And a second opening region 22-2 on the first opening 22-2. The first-side region 21-1, the first-second region 21-2, the first-third region 21-3, and the first- 1-4 region 21-4 can be defined.

은 0.036mm인 정사각형 판형상으로 구현될 수 있다.The first other layer 24 has a width a1 of 35 mm, a width a2 of 35 mm,

0.036 mm square plate shape.

A square plate-shaped intermediate layer having a width w1 of 33 mm, a width w2 of 33 mm, and a thickness t of 3.6 mm may be disposed between the first side layer 21 and the first other side layer 24.

The first 1-1 zone 21-1, the 1-2 zone 21-2, the 1-3 zone 21-3, and the 1-4 zone The first upper and lower connecting bodies 25 having a diameter d of 2.5 mm may be provided in the first artificial structure cell 2 so that respective regions of the second artificial structure 21-4 may be connected to the first other layer 24 have.

Accordingly, a first opening region having a shape corresponding to the first vertical connection body 25 can be realized so that the first vertical connection body 25 can pass through the first intermediate layer 23.

Hereinafter, the electric element values of each configuration of the first artificial struc- tural cell 2 implemented as described above will be described with reference to Fig.

)를 가질 수 있다.The divided first 1-1 zone 21-1, the 1-2 zone 21-2, the 1-3 zone (2-1) of the first side layer 21 of the first artifact structure cell 2 described above, 21-3, and / or the first to fourth regions 21-4 is 7.23 nH, the first inductance

).

The first-first region 21-1, the first-second region 21-2, the first-third region 21-3, and the first- And / or the first to fourth regions 21-4, and the third opening region 22-3 may have a capacitance C of 150 pF.

)를 가질 수 있다.A first inductance (7.23 nH) of the first artificial struc- tural cell (2)

).

)를 가질 수 있다.Each of the first upper and lower connected bodies 25 implemented in the above-described first artificial structure cell 2 has a second inductance of 0.949 nH

).

The electrical element values of the first artifact structure cell 2 may have serial, parallel, and / or serial / parallel relationships as shown in FIG. This can be calculated according to the above-described calculation method. The calculation process is omitted.

&Quot; (3) "

Equation (3) represents the impedance Z of the entire equivalent circuit according to the calculation of the electrical element value.

The resonance frequency f _{m of} the first artificial structure cell 2 according to the impedance Z can be calculated as follows.

 &Quot; (4) "

When the frequency when the imaginary part of the impedance Z is zero to as _m f, wherein f _m may be determined by the resonant frequency of the first man-made structure, the cell (2).

Thus, it can be seen that the resonance frequency f _m of the first artificial struc- tural cell 2 is 102 MHz.

On the other hand, as the capacitance C formed in the first side layer 21 is changed from 50 pF to 250 pF, the resonance frequency f _m of the first artificial structure cell 2 is changed from 177.2 MHz to 79.4 MHz .

A capacitance and an inductance, which are electric element values, are formed in the first side layer 21, the first side layer 24 and the first upper and lower connected body 25 of the implemented first artificial structure cell 2, It can be seen that i) the artificial structure cell 1 is miniaturized, and ii) a low resonance frequency is set, as the electrical element values are electrically connected by the upper and lower connector 25 to have a serial / parallel relationship.

4.1.2 Experimental Example

Hereinafter, a specific experimental example according to an embodiment of the present application will be described.

As shown in FIG. 9, electromagnetic waves can be injected into the above-described first artificial structure cell 2 to experimentally change the electromagnetic characteristics that can be generated in the first artificial structure cell 2.

Hereinafter, the description will be made of the case where i) the current formation of the first artificial structure cell 2, ii) the magnetic field formed around the first artificial structure cell 2, iii) ) The resonance phenomenon with the incident electromagnetic wave based on the resonance frequency of the first artificial struc- tural cell 2 will be described with reference to experimental data and experiment result data according to the experimental examples.

4.1.2.1 Induced Current Formation

Hereinafter, an experimental example of induction current formation observed when electromagnetic waves are incident on the first artificial structure cell 2 implemented according to a specific embodiment of the application will be described.

FIG. 13 is a view showing an induction current formed in a first artificial structure cell according to an embodiment of the present application. FIG.

13, an electromagnetic wave incident on the first artificial structure cell 2 is applied to the first side layer 21, the first upper side connector 25 and the first other side layer 24 of the implementing cell It can be seen that an induced current is formed.

When the direction of the induction current formed on the first layer 21 of the first artificial struc- tural cell 2 is the first direction, the direction of the induction current formed on the first layer 24 is in the first direction In a second direction.

The induced currents formed in the first side layer 21 and / or the first side layer 24 may be related to each other by the first upper and lower connected bodies 25 formed in the first artificial structure cell 2 . For example, the induced currents formed in the first layer 21 and / or the first layer 24 of the first artificial struc- tural cell 2 can be conducted to each other through the first vertically- have.

4.1.2.2 Resonance frequency and magnetic resonance

Hereinafter, the resonance frequency of the electromagnetic wave in the first artificial structure cell 2 implemented according to the concrete embodiment and the experimental example of the electromagnetic wave energy absorption of the first artificial structure cell 2 at the resonance frequency will be described.

FIG. 14 is a graph showing an impedance real part, an imaginary part, and an absorption ratio of a first artificial structure cell according to an embodiment of the present application.

15 is a graph showing the resonance frequency and the absorption rate according to a change in capacitance value of the first artificial structure cell according to the embodiment of the present application.

16 is a diagram showing magnetic energy included in the first artificial structure cell and energy loss of the first artificial structure cell when an electromagnetic wave is incident according to an embodiment of the present application.

에서의 상기 인공 구조체의 전자기파의 흡수를 실험적으로 파악한 결과를 알 수 있다.Referring to Fig. 14, the resonance frequency (resonance frequency) of the first artificial struc- tural cell 2

The absorption of the electromagnetic wave of the artificial structure in the experiment is grasped experimentally.

에서 전술하였듯이 제1 인공구조체셀(2)의 임피던스의 허수부가 0이 된다는 것을 알 수 있다.According to the above experimental example,

The imaginary part of the impedance of the first artificial struc- tural cell 2 becomes zero.

에서 입사되는 전자기파의 흡수 에너지가 최대가 됨을 알 수 있다.The resonance frequency of the first artificial struc- tural cell 2 (102 MHz)

It can be seen that the absorption energy of the electromagnetic wave that is incident at the maximum is the maximum.

라는 관계식에 따라 공진주파수는 반비례하여 감소됨을 알 수 있다.15, the resonance frequency of the first artificial structure cell 2 according to the experimental example for increasing the capacitance value of the capacitor implemented in the first artificial structure cell 2,

It can be understood that the resonance frequency is decreased in inverse proportion.

에서 제1 인공구조체셀(2)에 형성되는 마그네틱 에너지 분포를 알 수 있다. 상기 마그네틱 에너지는 제1 인공구조체셀(2)의 커패시터에서 최대값으로 나타남을 알 수 있다.Referring to FIG. 16 (a), the resonance frequency of the implemented first artificial structure cell 2

The magnetic energy distribution formed in the first artificial struc- tured cell 2 can be known. It can be seen that the magnetic energy appears at the maximum value in the capacitor of the first artificial structure cell 2.

Referring again to FIG. 16 (b), it can be seen that the energy loss of the implemented first artificial structure cell 2 is the smallest in the capacitor.

As shown in FIG. 16, is formed in the form of being accumulated in the capacitor formed in the first artificial struc- tural cell 2.

4.1.2.3 Polarization and incidence angle

Hereinafter, an experimental example in which the polarization of the electromagnetic wave and the angle of incidence of the electromagnetic wave are made incident on the first artificial structure cell 2 implemented according to a specific embodiment will be described.

17 is a graph showing the degree of absorption of electromagnetic waves according to the angle of incidence of the electromagnetic wave into the first artificial structure cell according to the embodiment of the present application.

18 is a graph showing the degree of electromagnetic wave absorption of the first artificial structure cell according to the polarization of the electromagnetic wave according to the embodiment of the present application.

범위

에서, 상기 제1 인공구조체셀(2)이 입사되는 공진 주파수의 전자기파의 에너지 흡수도는 거의 일정하게 유지될 수 있다.Referring to FIG. 17, the angle at which the electromagnetic wave is incident on the implemented first artificial structure cell 2

range

The energy absorption of the electromagnetic wave having the resonance frequency at which the first artificial struc- tural cell 2 is incident can be kept substantially constant.

에서

로 변경됨에 따라 전자기파의 에너지 흡수도는 99.8%에서 90%로 변경된다. 즉, 전자기파의 입사각이 급격하게 변경됨에도, 상대적으로 인공구조체셀의 에너지 흡수도는 거의 일정하게 유지될 수 있다.Specifically, when the angle of incidence of the electromagnetic wave in the angular range is

in

, The energy absorption of the electromagnetic wave is changed from 99.8% to 90%. That is, even if the angle of incidence of the electromagnetic wave is suddenly changed, the energy absorption of the artificial structure cell can be maintained substantially constant.

에서 흡수하는 전자기파의 에너지의 흡수도는 거의 일정하게 유지됨을 알 수 있다.Referring to FIG. 18, although the electric field and the magnetic field (IEM) included in the electromagnetic wave are polarized, the first artificial structure cell 2 implemented at a resonance frequency

The absorbance of the energy of the electromagnetic wave absorbed by the electrode is kept substantially constant.

가 변경됨에도 불구하고 상기 102MHz인 공진 주파수(

에서의 제1 인공구조체셀(2)의 에너지 흡수도는 거의 일정한 흡수도를 유지함을 알 수 있다.That is, the polarization angle

The resonance frequency of 102MHz (

It can be seen that the energy absorption of the first artificial struc- tural cell 2 retains the almost constant absorption.

Specifically, even though the polarization angle of the electromagnetic wave is changed, the absorbance is kept constant at about 99.8%.

The characteristic of the embodied first artificial struc- tured structure cell 2 having the above-described constant absorbency is changed by the symmetry of the upper layer 21 embodied in the first artificial struc- tural cell 2 It can be an effect due to the structure implemented in practice.

4.2 Artificial Structures

Hereinafter, specific examples and experimental examples of the artificial structure 10 will be described.

4.2.1 Implementation Example

19 is a view showing an artificial structure actually implemented according to an embodiment of the present application.

Referring again to FIG. 2, a specifically embodied artificial structure 10 according to an embodiment of the present application may be implemented by disposing a first artificial structure cell 2 and a second artificial structuring cell 3.

Referring to FIG. 19, as described above, the artificial struc- tures 10 may be disposed and continuously arranged so that the large-sized artificial struc- tures 10 are realized.

The first side layer 21, the first intermediate layer 23, the first other side layer 24, and the first and second upper and lower layers 21 and 22, which are included in the arranged first artificial structure cell 2 and the second artificial structure cell 3, The sizes of the width, thickness, through-hole size and the like of the connector 25 are the same as those of the artificial structure cell 1 described above.

However, the electrical element values included in the equivalent circuits of the first artificial struc- tural cell 2 and the second artificial struc- tural cell 3 are set different from the artificial struc- tural cell 1 described above.

That is, the capacitance value C1 of the arranged first artificial struc- tural cell 2 and the capacitance C2 of the second artificial struc- tural cell 3 are different from each other. Specifically, the first capacitance value C1 may be 40 pF and the second capacitance value C2 may be 25 pF.

Accordingly, the resonance frequencies of the first artificial struc- tural cell 2 and the second artificial struc- tural cell 3 are 224.9 MHz (first artificial struc- tural cell 2), and 284.2 MHz (second artificest structure cell 3).

4.2.2 Experimental Example

FIG. 20 is a graph showing an energy absorption degree according to an incident angle of an electromagnetic wave incident on an artificial structure according to an embodiment of the present application. FIG.

로 변경됨에도 불구하고, 상기 인공구조체(10)가 흡수하는 전자기파의 에너지 흡수도는 90% 이상의 흡수도로 일정하게 유지되는 것을 알 수 있다.20 (a) and 20 (b), when the incident angle of the electromagnetic wave incident on the artificial structure 10 is

It can be seen that the energy absorption of the electromagnetic wave absorbed by the artificial structure 10 is kept constant at an absorption of 90% or more.

In the artificial structural cell according to the present invention described above, the steps constituting each embodiment are not essential, and therefore, each embodiment can selectively include the above-described steps. Moreover, each step constituting each embodiment is not necessarily performed according to the order described, and the step described later may be performed before the step described earlier. It is also possible that each step is repeatedly performed during operation.

While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be apparent to those skilled in the art that changes or modifications may fall within the scope of the appended claims.

1: artificial structure cell 2: first artificial structure cell
3: Second artificial structure cell 10: Artificial structure
21: first side layer 21-1:
21-2: 1-2 zone 21-3: 1-3 zone
21-4: first to fourth regions 22: first opening regions
22-1: the 1-1 opening region 22-2: the 1-2 opening region
22-3: first to third opening regions 22-4: fourth to fourth opening regions
23: first intermediate layer 24: first other layer
25: first vertical link body 25-1: first vertical link body 25-1:
25-2: 1-2 first-level connector 25-3: 1st-3rd connector
31: second side layer 31-1: second-1 region
31-2: second-2 region 31-3: second-third region
31-4: the 2-4 region 32: the second one-side opening region
33: second intermediate layer 34: second other layer
35-1: 2nd-1 up-and-down link body 35-2: 2nd -2 up-link body
35-3: 2nd to 3rd up-and-down connector
211: first curved surface 212: second curved surface
231: first intermediate layer through hole 232: second intermediate layer through hole
233: third middle layer through hole 234: fourth middle layer through hole

Claims (15)

An artificial structure in which an artificial structure cell including a first artificial structure cell and a second artificial structure cell is disposed,
A first intermediate layer, a first one side layer disposed on one side of the first intermediate layer, a first other side layer disposed on the other side of the first intermediate layer, and a first upper and a lower layer connecting the first one side layer and the first other layer Wherein the first opening layer has a first capacitance, and the first opening layer has a first capacitance, and the first one side layer has a first capacitance, Wherein the body has the first artificial structure cell having the first inductance; And
A second intermediate layer, a second one side layer disposed on one side of the second intermediate layer, a second other side layer disposed on the other side of the second intermediate layer, and a second upper and lower layers connecting the second one side layer and the second other layer And the second one side layer is formed with a second opening region for dividing the at least one region into a second opening region and the second opening region has a second capacitance, The second artificial structure cell having a second inductance,
Wherein the first capacitance and the second capacitance are different values,
A first resonance frequency is defined based on the first capacitance and the first inductance, and a second resonance frequency is defined based on the second capacitance and the second inductance
Artificial structure.
The method according to claim 1,
Wherein a first dielectric is provided in the first opening region so that the first opening region has a first capacitance,
The second opening region having a second dielectric such that the second opening region has a second capacitance,
Artificial structure.
3. The method of claim 2,
Wherein the first capacitance and the second capacitance are different from each other in electrical characteristics of the first dielectric and the second dielectric,
Artificial structure.
The method according to claim 1,
The first side layer is implemented as a first material,
And a second material of the second side layer,
Wherein the first capacitance and the second capacitance are different from each other due to a difference in electrical properties between the first material and the second material
Artificial structure.
The method according to claim 1,
And a capacitance element,
Wherein the capacitance element comprises a first conductor, a second conductor, and a dielectric disposed between the first conductor and the second conductor,
Wherein the capacitance element comprises a first capacitance element and a second capacitance element,
Wherein a first capacitance element is disposed in the first opening region such that the first opening region has the first capacitance,
And a second capacitance element is disposed in the second opening region, whereby the second opening region has a second capacitance
Artificial structure.
The method according to claim 1,
Wherein the first side layer includes a 1-1 region and a 1-2 region,
The first region has a first curved surface having a first curvature and a second curved surface having a second curvature,
The first curvature is the same as the second curvature
Artificial structure.
The method according to claim 6,
The first region has a first plane, the first-second region has a second plane, the first plane and the second plane are parallel to each other,
Wherein the first plane is connected to the first curved surface and the second curved surface
Artificial structure.
8. The method of claim 7,
Wherein a first conductor is disposed on the first plane, a second conductor is disposed on the second plane, and a dielectric is disposed between the second conductor and the first conductor,
Wherein the first opening region has a first capacitance
Artificial structure.
The method according to claim 1,
Wherein the first opening region includes a 1-1 opening region, a 2-1 opening region, and a 3-1 opening region,
The first opening region is located at the center of the first one side layer,
The second-1 < th > aperture region is located at a peripheral portion of the first one-side layer,
The third-1 opening region is located between the 1-1 opening region and the 2-1 opening region
Artificial structure.
10. The method of claim 9,
And a dielectric is disposed in the 3-1 opening region, whereby the first capacitance is formed in the 3-1 opening region
Artificial structure.
The method according to claim 6,
The first vertically-
And is implemented in a cylindrical shape,
And the second layer is formed of the same material as the material of the first layer or the layer of the second layer.
Artificial structure.
12. The method of claim 11,
Wherein the first vertical link includes a first link and a second link,
The first connector connects the first 1-1 region of the first one side layer and the first other side layer,
And the second connector connects the first-second area of the first one-side layer and the first other-side layer.
Artificial structure.
The method according to claim 1,
The absorption of the energy of the electromagnetic wave is maintained at 98% or more regardless of the polarization of the electromagnetic wave incident on the artificial structure
Artificial structure.
The method according to claim 1,
When the incident angle of the electromagnetic wave incident on the artificial structure is changed from 0 to 55 degrees, the energy of the electromagnetic wave is maintained at 90% or more regardless of the change of the incident angle
Artificial structure.
Intermediate layer; A first layer disposed on one side of the intermediate layer; A second layer disposed on the other side of the intermediate layer; An artificial structure in which at least one artificial structure cell is disposed,
The artificial structural cell
And a connector for connecting the first layer and the second layer,
Wherein the first layer includes at least one opening region that is divided into a 1-1 region and a 1-2 region, and the opening region is filled with a dielectric, thereby forming the 1-1, The aperture region having a capacitance,
Wherein the connecting body includes a first connecting body and a second connecting body, the first connecting body connects the 1-1 region and the second layer, and the second connecting body connects the 1-2 region and the 2 < Layer,
Wherein the artificial struc- tural cell comprises a first artificial struc- tural cell and a second artificial struc- tural cell, wherein the first artificial struc- tural cell and the second artificial struc- tural cell are disposed in the artificial struc- ture,
The capacitance of the first artificial struc- tural cell and the capacitance of the second artificial struc- tural cell are different values,
A first resonance frequency is determined based on the capacitance of the first artificial structure cell and a second resonance frequency is determined based on the capacitance of the second artificial structure cell
Artificial structure.

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