KR101844126B1 - Selective device and phase change memory device including the same - Google Patents

Selective device and phase change memory device including the same Download PDF

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KR101844126B1
KR101844126B1 KR1020160003868A KR20160003868A KR101844126B1 KR 101844126 B1 KR101844126 B1 KR 101844126B1 KR 1020160003868 A KR1020160003868 A KR 1020160003868A KR 20160003868 A KR20160003868 A KR 20160003868A KR 101844126 B1 KR101844126 B1 KR 101844126B1
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composite structure
titanium
phase change
vanadium oxide
heater
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KR1020160003868A
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Korean (ko)
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KR20170084617A (en
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송윤흡
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한양대학교 산학협력단
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    • H01L45/14—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00—Compounds of titanium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G31/00—Compounds of vanadium
    • C01G31/02—Oxides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H01L45/1608—
    • H01L45/1641—

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

The selection element used in the memory element includes a composite structure composed of vanadium oxide and titanium.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a memory device,

The following embodiments are directed to a selective element and a phase change memory device including the same. More particularly, the present invention relates to a selective element formed of a composite structure formed on the basis of vanadium oxide, and a phase change memory device including the same. .

With the rapid development of IT technology, there is a demand for a next generation memory device having characteristics such as high speed and large capacity suitable for development of a portable information communication system and a device for wirelessly processing a large amount of information. In the next-generation semiconductor memory device, lower power consumption is required, including non-volatility of a general flash memory device, high-speed operation of a static random access memory (SRAM), and high integration of DRAM (Dynamic RAM).

As a next generation semiconductor memory device, a ferroelectric RAM (FRAM), a magnetic RAM (MRAM), a phase-change RAM (PRAM), or a nano floating gate (NFGM), which have superior power and data retention and write / Memory) have been studied.

Among them, PRAM (phase change memory) can be manufactured at a low cost with a simple structure, and can be operated at high speed, so that it is being actively studied as a next generation semiconductor memory device.

The selection element included in such a PRAM is a device in which a crystal state of a phase change material (PCM) is changed between a crystalline state (a set state having low resistance) and an amorphous state (a state having a high resistance) And switches the current and the voltage so that the current and voltage are changed.

At this time, since the selective element included in the existing PRAM is formed of a silica-based material, it is difficult to use it in a three-dimensional structure.

Therefore, the following embodiments propose a technique for a selection device formed of a composite structure formed on the basis of vanadium oxide so as to be usable in a three-dimensional structure.

One embodiment provides a selection device formed of a composite structure formed on the basis of vanadium oxide so as to be usable in a three-dimensional structure, and a phase-change memory device including the selection device.

Specifically, one embodiment provides a selection device formed of a composite structure formed on the basis of vanadium oxide so that a transition temperature is shifted, and a phase change memory device including the selection device.

According to one embodiment, the selection element used in the memory element comprises a composite structure composed of vanadium oxide and titanium.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the transition temperature of the composite structure.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the electrical conductivity of the composite structure depending on the temperature.

The composition ratio of the titanium to the vanadium oxide in the composite structure may be adjusted so that the electrical conductivity of the composite structure may be such that the electrical conductivity of the composite structure is higher than a specific temperature value.

The composition ratio of titanium may be adjusted to have a weight percentage of 30% or more based on the vanadium oxide.

The composite structure can be formed by dissolving vanadium and titanium powder in a hydrogen peroxide solution and obtaining a sol containing the titanium.

The selection device may be used in a memory device designed with a crossbar architecture.

According to one embodiment, a phase change memory device includes at least one heater; At least one phase change material (PCM) having a crystalline state changed according to heat supplied by the at least one heater; And a selection element formed to be in contact with the at least one phase change layer, the composite structure being formed of vanadium oxide and titanium.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the transition temperature of the composite structure.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the electrical conductivity of the composite structure depending on the temperature.

The composition ratio of the titanium to the vanadium oxide in the composite structure may be adjusted so that the electrical conductivity of the composite structure may be such that the electrical conductivity of the composite structure is higher than a specific temperature value.

The composition ratio of titanium may be adjusted to have a weight percentage of 30% or more based on the vanadium oxide.

According to one embodiment, a three-dimensional phase change memory (Phase Change Memory) comprises at least one heater; A plurality of phase change layers connected in a vertical direction to the at least one heater, the crystalline state being changed according to heat supplied by the at least one heater; And a plurality of selection elements each of which is formed to be in contact with the plurality of phase change layers, respectively, wherein the composite structure is formed of vanadium oxide and titanium.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the transition temperature of the composite structure.

The composite structure may be formed by doping the vanadium oxide with the titanium based on the electrical conductivity of the composite structure depending on the temperature.

One embodiment can provide a selection device formed of a composite structure formed on the basis of vanadium oxide so as to be usable in a three-dimensional structure, and a phase-change memory device including the selection device.

In particular, one embodiment can provide a selection device formed of a composite structure formed on the basis of vanadium oxide so that the transition temperature is shifted, and a phase change memory device including the selection device.

FIG. 1 is a graph showing electric conductivity according to temperature of a composite structure according to an embodiment.
FIG. 2 is a view showing a transition temperature according to a composition ratio of titanium to vanadium oxide in a composite structure according to one embodiment.
3 illustrates a phase change memory device according to one embodiment.
4 illustrates a phase change memory device according to another embodiment.
5 is a diagram illustrating a three dimensional phase change memory according to one embodiment.

Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to or limited by the embodiments. In addition, the same reference numerals shown in the drawings denote the same members.

Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification.

FIG. 1 is a graph showing electric conductivity according to temperature of a composite structure according to an embodiment.

Referring to FIG. 1, since the vanadium oxide without doping an impurity generates a transition at 80 degrees, the selective element 110 formed only of vanadium oxide has conductivity at 80 degrees and has insulating property at a temperature lower than 80 degrees. have.

Therefore, the selection device 110 formed only of vanadium oxide has a disadvantage that it is difficult to use in a phase-change memory device which must be turned on / off at 120 degrees.

On the other hand, since the composite structure composed of vanadium oxide and titanium generates a transition at 120 degrees, the selection device 120 formed of the composite structure has conductivity at 120 degrees and can have insulation at a temperature lower than 120 degrees . At this time, the order of the transitions generated in the complex structure can have a value of.

Therefore, the selection device 120 formed of the complex structure can be optimally used in the phase change memory device which must be turned on / off at a reference of 120 degrees.

Accordingly, the composite structure according to one embodiment is composed of vanadium oxide and titanium so that it can be used as the selection element 120 in the phase change memory element.

For example, the composite structure can be formed by doping vanadium oxide with titanium based on the transition temperature of the composite structure. Here, the composition ratio of titanium to vanadium oxide can be adjusted so that the transition temperature of the composite structure is equal to or higher than a specific temperature value (a temperature value at which the selection element 120 used in the memory element is turned on / off).

That is, the composite structure can be formed by doping titanium oxide in the vanadium oxide based on the electrical conductivity of the composite structure depending on the temperature.

At this time, the composition ratio of titanium to vanadium oxide is such that the electric conductivity according to the temperature of the composite structure is higher than a specific temperature value (a temperature value at which the selection element 120 used in the memory element is turned on / off) (The electrical conductivity value at which the selection element 120 formed of the complex structure is turned on).

Thus, the selection element 120 is formed of a composite structure formed of vanadium oxide and titanium, so that it can be optimally used in a phase change memory element and can be used in a three-dimensional structure phase change memory.

However, the present invention is not limited thereto. The selection device 120 formed of a complex structure may be used in various memory devices (for example, STT-MRAM) designed with a crossbar architecture. In particular, Lt; / RTI > memory.

FIG. 2 is a view showing a transition temperature according to a composition ratio of titanium to vanadium oxide in a composite structure according to one embodiment.

Referring to Fig. 2, the transition temperature of the composite structure forming the selection device according to one embodiment is changed based on the composition ratio of titanium doped to vanadium oxide in the composite structure. For example, the transition temperature of the composite structure can be increased as the weight percentage of titanium based on vanadium oxide increases.

Therefore, based on this principle, the composition ratio of titanium to vanadium oxide can be adjusted such that the transition temperature of the composite structure is higher than a specific temperature value (the electrical conductivity of the composite structure is higher than the specific temperature, Conductivity < / RTI > value).

For example, the composition ratio of titanium to vanadium oxide is such that the transition temperature of the composite structure is 120 degrees or more (such that the electrical conductivity of the composite structure is 120 degrees, To 30% by weight based on the weight of the composition.

However, the composition ratio of titanium to vanadium oxide is not limited thereto, and may be adaptively adjusted based on the operating temperature and / or electric conductivity of the memory element in which the selection element is used.

3 illustrates a phase change memory device according to one embodiment.

3, a phase change memory device 300 according to one embodiment includes at least one heater 310, at least one phase change material (PCM) 320, and a selection device 330 .

The at least one heater 310 may be formed of a conductive material and serve to supply heat to the at least one phase change layer 320. At this time, at least one heater 310 may perform functions of an upper electrode and a lower electrode in the phase-change memory device 300, respectively.

Accordingly, the phase change memory device 300 may include at least one heater 310, at least one heater 310, and at least one heater 310, Of the phase change layer 320 of FIG.

Although the first heater 311 of at least one heater 310 functions as an upper electrode and the second heater 312 functions as a lower electrode, the present invention is not limited thereto. An upper electrode which is distinguished from the first heater 311 and a lower electrode which is different from the second heater 312 may be additionally provided.

Also, at least one heater 310 is shown as being composed of two heaters (first heater 311 and second heater 312), but may also be composed of a single heater.

The at least one phase change layer 320 is arranged such that the crystalline state is changed between crystalline (set state with low resistance) and amorphous state (reset state with high resistance) according to the heat supplied by at least one heater 310 Group-chalcogen elements, Group IV elements, or Group V elements.

Although the figure shows that at least one phase change layer 320 is composed of two phase change layers (the first phase change layer 321 and the second phase change layer 322) .

The composite structure-composite structure is formed of vanadium oxide and titanium so that the selection element 330 is in contact with at least one phase change layer 320.

Here, the composite structure may be formed by doping titanium oxide in the vanadium oxide based on the transition temperature of the composite structure. For example, the compositional ratio of titanium to vanadium oxide can be controlled such that the transition temperature is at or above a certain temperature value (a temperature value at which the selection device 330 should be turned on / off, e.g., 120 degrees in the phase change memory device 300) .

As a more specific example, the composition ratio of titanium to vanadium oxide can be adjusted to a weight percentage of 30% based on the vanadium oxide such that the transition temperature is 120 degrees or higher.

That is, the composite structure can be formed by doping titanium oxide in the vanadium oxide based on the electrical conductivity of the composite structure depending on the temperature. For example, the compositional ratio of titanium to vanadium oxide is such that the electrical conductivity with temperature of the composite structure is higher than a specific temperature value (a temperature value at which the selection device 330 should be turned on / off in the phase-change memory device 300, (The electrical conductivity value at which the selection element 330 is turned on) at a certain point in time.

More specifically, the composition ratio of titanium to vanadium oxide is such that the electrical conductivity according to the temperature of the composite structure is 30% by weight based on the vanadium oxide so as to have an electrical conductivity value at which the selection element 330 is turned on at 120 ° C. ≪ / RTI >

The composite structure having such a composition ratio can be prepared by dissolving vanadium and titanium powder in a hydrogen peroxide solution and then obtaining a sol containing titanium. At this time, the composition ratio of titanium to vanadium oxide can be adjusted as vanadium and titanium powder are dissolved in the hydrogen peroxide solution, and then the degree of obtaining the sol containing titanium is changed. However, without being limited thereto, and not limited thereto, the composite structure may be formed in various ways so as to have the composition ratio described above based on vanadium oxide and titanium.

In addition, the phase-change memory element 300 including the selection element 330 formed of a complex structure is not limited to the above-described structure alone, and may have various structures. A detailed description thereof will be described with reference to FIG.

In addition, the selection device 330 formed of the complex structure is used not only in the phase-change memory device 300 as described above, but also in various memory devices such as an STT-MRAM. In such a case, the composition ratio of vanadium oxide and titanium in the composite structure forming the selection element can be adaptively adjusted according to the characteristics of the memory element in which the selection element is used.

4 illustrates a phase change memory device according to another embodiment.

Referring to FIG. 4, a phase change memory device according to another embodiment includes at least one heater, at least one phase change layer, and a selection device, similar to the phase change memory device illustrated with reference to FIG. 3, And has a different structure.

For example, the first phase change memory element 410 may include at least one heater composed of a first heater and a second heater, like the phase change memory element shown in Fig. 3, , But unlike the phase change memory element shown with reference to FIG. 3, at least one phase change layer is composed of a single phase change layer. Therefore, the first heater constituting at least one heater can abut the selection element, and the second heater constituting at least one heater can abut a single phase change layer constituting at least one phase change layer .

In another example, the second phase change memory element 420 includes a selection element formed of a composite structure similar to the phase change memory element illustrated with reference to FIG. 3, Unlike the device, at least one heater is composed of a single heater, and at least one phase change layer is composed of a single phase change layer. At this time, a single heater constituting at least one heater can come into contact with a single phase change layer constituting at least one phase change layer.

However, the phase-change memory device is not limited to or limited to the above-described structure alone, and may have various structures including a selection device formed of a complex structure.

5 is a diagram illustrating a three dimensional phase change memory according to one embodiment.

Referring to FIG. 5, a three dimensional phase change memory 500 according to one embodiment includes at least one heater 510, a plurality of phase change layers 520, and a plurality of selection elements 530.

The at least one heater 510 may be formed of a conductive material so as to be longitudinally elongated to perform heat supply to each of the plurality of phase change layers 520. For example, the first heater 511 of the at least one heater 510 is long in the longitudinal direction, and the second heater 512 of the at least one heater 510 is relatively longer than the first heater 511 In the longitudinal direction so as to have a short length. However, the present invention is not limited thereto, and at least one heater 510 may be configured to include only a first heater 511 (formed of a single heater) that is elongated in the longitudinal direction.

Here, the at least one heater 510 may be shared by the plurality of phase change layers 520 and / or the plurality of selection elements 530. For example, a first heater 511, which is longitudinally elongated in at least one heater 510, may be shared by the plurality of phase change layers 520 and / or the plurality of selection elements 530 have.

At this time, at least one heater 510 can perform functions of an upper electrode and a lower electrode in the three-dimensional phase change memory 500, respectively.

Thus, the three-dimensional phase change memory 500 may be configured to supply heat generated from the current flow or voltage difference between the at least one heater 510 performing the functions of the upper electrode and the lower electrode to at least one Of phase-change layers 520, respectively.

Although the second heater 512 of at least one heater 510 functions as an upper electrode and the first heater 511 functions as a lower electrode, A lower electrode which is distinguished from the first heater 511, and an upper electrode which is distinguished from the second heater 512 may be additionally provided.

Each of the plurality of phase change layers 520 is connected in a vertical direction to at least one heater 510 so that the crystalline state is crystalline according to the heat supplied by the at least one heater 510 ) And amorphous (reset state having a high resistance), the VI group chalcogen elements, the IV group elements, or the V group elements.

Although the figure shows that each of the plurality of phase change layers 520 is composed of two phase change layers (the first phase change layer 521 and the second phase change layer 522) .

Each of the plurality of select elements 530 is formed to be in contact with the plurality of phase change layers 520, respectively, and the complex structure-complex structure is formed of vanadium oxide and titanium.

Here, the composite structure may be formed by doping titanium oxide in the vanadium oxide based on the transition temperature of the composite structure. For example, the composition ratio of titanium to vanadium oxide is such that the transition temperature is lower than a specific temperature value (a temperature value at which each of the plurality of select elements 530 should be turned on / off in the three-dimensional phase change memory 500, ) Or more. As a more specific example, the composition ratio of titanium to vanadium oxide can be adjusted to a weight percentage of 30% based on the vanadium oxide such that the transition temperature is 120 degrees or higher.

That is, the composite structure can be formed by doping titanium oxide in the vanadium oxide based on the electrical conductivity of the composite structure depending on the temperature. For example, the compositional ratio of titanium to vanadium oxide is such that the electrical conductivity with temperature of the composite structure is less than a certain temperature value (each of the plurality of select elements 530 in the three-dimensional phase change memory 500 must be turned on / off (A value of electrical conductivity at which each of the plurality of selection elements 530 is turned on) at a temperature value of, for example, 120 degrees or more.

More specifically, for example, the composition ratio of titanium to vanadium oxide is set to 30% based on the vanadium oxide so that the electrical conductivity of each of the plurality of selectors 530 is turned on at 120 degrees according to the temperature of the composite structure. % ≪ / RTI > by weight.

In particular, the composition ratio (composition ratio of titanium to vanadium oxide) of the composite structure forming each of the plurality of selection elements 530 in the three-dimensional phase change memory 500 can be adjusted differently.

The composite structure having such composition ratios can be prepared by dissolving the vanadium and titanium powders in a hydrogen peroxide solution and then obtaining a sol containing titanium. Here, the composition ratio of titanium to vanadium oxide can be adjusted as vanadium and titanium powder are dissolved in a hydrogen peroxide solution, and then the degree of obtaining a sol containing titanium is changed. However, without being limited thereto, and not limited thereto, the composite structure may be formed in various ways so as to have the composition ratio described above based on vanadium oxide and titanium.

Further, the three-dimensional phase change memory 500 including the plurality of selection elements 530 formed by the complex structure is not limited to the above-described structure alone, and may have various structures. For example, the three dimensional phase change memory 500 may be designed based on various structures of the phase change memory element described with reference to FIG.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

Claims (15)

In a selection device used in a memory device,
A composite structure composed of vanadium oxide and titanium
Lt; / RTI >
In the composite structure, the composition ratio of the titanium to the vanadium oxide is
Wherein the composite structure has a transition temperature of 120 DEG C or higher so as to have an electric conductivity value at which the selection device is turned on at 120 DEG C according to a temperature of the composite structure, Adjusted to have a percentage,
Wherein the degree to which the titanium-containing sol is obtained after the vanadium and titanium powders are dissolved in the hydrogen peroxide solution is varied. delete The method according to claim 1,
The composite structure
Wherein the vanadium oxide is doped with the titanium based on electric conductivity according to a temperature of the composite structure. delete delete delete The method according to claim 1,
The selection element
A selection device used in a memory device designed with a crossbar architecture. At least one heater;
At least one phase change material (PCM) having a crystalline state changed according to heat supplied by the at least one heater; And
The composite structure being configured to be in contact with the at least one phase change layer, the complex structure being comprised of vanadium oxide and titanium;
Lt; / RTI >
In the composite structure, the composition ratio of the titanium to the vanadium oxide is
Wherein the composite structure has a transition temperature of 120 DEG C or higher so as to have an electric conductivity value at which the selection device is turned on at 120 DEG C according to a temperature of the composite structure, Adjusted to have a percentage,
Wherein the degree of obtaining the titanium-containing sol after the vanadium and titanium powders are dissolved in the hydrogen peroxide solution is varied. delete 9. The method of claim 8,
The composite structure
Wherein the vanadium oxide is doped with titanium based on electric conductivity of the composite structure according to a temperature. delete delete At least one heater;
A plurality of phase change layers connected in a vertical direction to the at least one heater, the crystalline state being changed according to heat supplied by the at least one heater; And
A plurality of selection elements formed to be in contact with the plurality of phase change layers, respectively, the composite structure being formed of vanadium oxide and titanium,
/ RTI >
In the composite structure, the composition ratio of the titanium to the vanadium oxide is
Wherein the composite structure has a transition temperature of 120 DEG C or higher so as to have an electric conductivity value at which the selection device is turned on at 120 DEG C according to a temperature of the composite structure, Adjusted to have a percentage,
Phase change memory (Phase Change Memory) characterized in that the degree to which the titanium-containing sol is obtained after the vanadium and titanium powders are dissolved in the hydrogen peroxide solution is controlled. delete 14. The method of claim 13,
The composite structure
Wherein the vanadium oxide is doped with titanium based on electrical conductivity of the composite structure according to a temperature.
KR1020160003868A 2016-01-12 2016-01-12 Selective device and phase change memory device including the same KR101844126B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200027642A (en) * 2018-09-05 2020-03-13 한양대학교 산학협력단 Phase change random access memory element with normally off state and phase change random access memory with three dimension architecture based on the same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10615112B2 (en) * 2018-05-03 2020-04-07 International Business Machines Corporation MIM capacitor for improved process defect tolerance

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200027642A (en) * 2018-09-05 2020-03-13 한양대학교 산학협력단 Phase change random access memory element with normally off state and phase change random access memory with three dimension architecture based on the same
KR102143998B1 (en) 2018-09-05 2020-08-12 한양대학교 산학협력단 Phase change random access memory element with normally off state and phase change random access memory with three dimension architecture based on the same

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