KR101842116B1 - Quartz member manufacturing method, apparatus manufacturing method and substrate treating apparatus - Google Patents

Quartz member manufacturing method, apparatus manufacturing method and substrate treating apparatus Download PDF

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KR101842116B1
KR101842116B1 KR1020150148787A KR20150148787A KR101842116B1 KR 101842116 B1 KR101842116 B1 KR 101842116B1 KR 1020150148787 A KR1020150148787 A KR 1020150148787A KR 20150148787 A KR20150148787 A KR 20150148787A KR 101842116 B1 KR101842116 B1 KR 101842116B1
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quartz member
gas
substrate
quartz
flame
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KR1020150148787A
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Korean (ko)
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KR20170047989A (en
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장용수
김선래
양정윤
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세메스 주식회사
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    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
    • C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
    • C03C23/007—Other surface treatment of glass not in the form of fibres or filaments by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Thermal Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

The present invention relates to a method of manufacturing a quartz member. The method of manufacturing a quartz member according to an embodiment of the present invention includes a surface modification step of modifying the surface of a quartz member, and the surface modification step includes a surface nitridation step of nitriding the surface of the quartz member. Thus, the method of manufacturing a quartz member according to an embodiment of the present invention can nitride the surface prior to assembling the quartz member into the apparatus.

Description

TECHNICAL FIELD [0001] The present invention relates to a quartz member manufacturing method, a device manufacturing method, and a substrate processing apparatus.

The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma.

Plasma is an ionized gas state that is generated by a very high temperature, a strong electric field, or RF electromagnetic fields, and consists of ions, electrons, and radicals. In the semiconductor device manufacturing process, various processes are performed using plasma. For example, the etching process is performed by colliding the ion particles contained in the plasma with the substrate.

One example of a general substrate processing apparatus for processing a substrate using plasma is a plasma processing apparatus in which a microwave applied to an antenna is applied to the interior of a process chamber through a dielectric plate positioned under the antenna, Plasma is generated by excitation. The dielectric plate is generally provided with a material containing quartz. Thus, it can be damaged by the plasma during the plasma process for the substrate. This causes frequent replacement of the dielectric plate and generation of foreign matter. Therefore, in order to prevent this, a process of nitriding the surface of the dielectric plate is performed.

1 is a flowchart showing a general method of manufacturing a substrate processing apparatus. Referring to FIG. 1, a general substrate processing apparatus manufacturing method includes a dielectric plate manufacturing step (1) in which a shaping process and surface roughness adjustment (3) for controlling the surface roughness of the dielectric plate are performed , The dielectric plate is assembled into the apparatus to manufacture the substrate processing apparatus, or the damaged dielectric plate is replaced (2) by the plasma. In this case, in general, the process of nitriding the surface of the dielectric plate is performed by mounting the dielectric plate on the substrate processing apparatus, using the dummy substrate to prevent the surface of the region of the substrate support unit on which the substrate is placed from being damaged by the plasma, Plasma is generated and a nitriding gas is supplied together in a plasma seasoning (step 4) in which the interior of the process chamber is prepared so as to be capable of performing a substrate processing process. Therefore, the execution time of the plasma seasoning (4) step is increased. This increases the use amount of the dummy substrate and increases the preparation time for processing the substrate by using the substrate processing apparatus after assembling or replacing the dielectric plate.

The present invention is intended to provide an apparatus and a method capable of minimizing the execution time of the plasma seasoning step.

Further, the present invention is intended to provide an apparatus and a method capable of minimizing the amount of use of the dummy substrate.

The present invention also provides an apparatus and a method that can minimize the preparation time for processing a substrate.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a method for manufacturing a quartz member. According to one embodiment, a method of manufacturing a quartz member for manufacturing a quartz member provided in a substrate processing apparatus for processing a substrate using plasma and provided with a material including Quartz, comprises the steps of: And a surface modification step of nitriding the surface of the quartz member.

And the surface modification step further comprises a surface roughness adjustment step of adjusting the roughness of the surface of the quartz member.

The surface roughness adjusting step and the surface nitriding step are performed at the same time.

The surface modification step is performed by heat treating the quartz member while supplying a nitriding gas for providing the nitrogen component (N) to the quartz member.

The heat treatment may be performed by bringing the flame directly into contact with the surface of the quartz member.

The heat treatment is performed while supplying a combustion gas directly burned to generate the flame, an oxygen (O 2 ) gas for generating and maintaining the combustion, and a temperature-rising gas for raising the temperature of the flame.

The temperature elevating gas may be provided as a gas containing hydrogen (H 2 ).

The temperature of the flame is provided above the temperature at which the molecules of the nitriding gas can dissociate into ions.

The quartz member may be a dielectric plate that transfers microwaves from the antenna to the interior of the process chamber, or a liner that is installed on the inner wall of the process chamber.

The present invention also provides a method of manufacturing a device. According to one embodiment, an apparatus manufacturing method for manufacturing a substrate processing apparatus for processing a substrate using plasma includes the steps of: nitriding a surface of the component during manufacture of the component exposed to the plasma to complete the component; And the parts are assembled into the substrate processing apparatus.

The substrate processing apparatus is a device that applies a microwave to an antenna to generate a plasma from the gas supplied into the substrate processing apparatus.

The nitriding may be performed by heat treating the component while supplying a gas containing a nitrogen component to the surface of the component, wherein the heat treatment is performed by bringing the flame directly into contact with the surface of the component.

The heat treatment may be performed while supplying a combustion gas directly burned to generate the flame, an oxygen gas for generating and maintaining the combustion, and a temperature-rising gas for raising the temperature of the flame.

The part is provided in a material comprising quartz.

The component may be a dielectric plate provided on the upper surface of the processing space to be processed by the plasma or a liner provided on the side of the processing space.

The present invention also provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus for processing a substrate using plasma includes: a processing chamber in which a processing space in which a substrate is processed is formed; A substrate supporting unit for supporting the substrate in the processing space; An antenna disposed on the substrate supporting unit and having a plurality of slots; A microwave applying unit for applying a microwave to the antenna; A gas supply unit for supplying gas into the processing space; A quartz member exposed to the plasma and provided with a material comprising quartz, wherein the quartz member is provided with a surface nitrided before being assembled to the substrate processing apparatus.

The quartz member may be a dielectric plate that transfers microwaves from the antenna to the process space, or a liner that is installed on the inner wall of the process chamber.

The apparatus and method according to the embodiment of the present invention can minimize the execution time of the plasma seasoning step.

Further, the apparatus and method according to the embodiment of the present invention can minimize the usage amount of the dummy substrate.

Further, the apparatus and method according to the embodiment of the present invention can minimize the preparation time for processing the substrate.

1 is a flowchart showing a general method of manufacturing a substrate processing apparatus.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
3 is a bottom view of the antenna of Fig.
4 is a flowchart illustrating a method of manufacturing a device according to an embodiment of the present invention.
5 is a view showing the surface modification step of FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

2 is a sectional view showing a substrate processing apparatus 10 according to an embodiment of the present invention.

Referring to FIG. 2, the substrate processing apparatus 10 performs processing on the substrate W using plasma. The substrate processing apparatus 10 includes a process chamber 100, a substrate support unit 200, a gas supply unit 300, a microwave application unit 400, an antenna 500, a chopper plate 600 and a quartz member .

The process chamber 100 is formed with a process space 101 therein and the inner space 101 is provided with a space in which the process of processing the substrate W is performed. The process chamber 100 includes a body 110 and a cover 120.

The upper surface of the body 110 is opened and a space is formed therein. A groove 112 into which the flange 920 is inserted is formed on the inner wall of the body 110.

The cover 120 is placed on top of the body 110 and seals the open top surface of the body 110. The cover 120 is stepped inside the lower end so that the upper space has a larger radius than the lower space.

A substrate inlet (not shown) may be formed on one side wall of the process chamber 100. The substrate inlet (not shown) is provided as a passage through which the substrate W can enter and exit the process chamber 100. The substrate inlet is opened and closed by an opening and closing member such as a door.

An exhaust hole 102 is formed in the bottom surface of the process chamber 100. The exhaust hole 102 is connected to the exhaust line 131. With the exhaust through the exhaust line 131, the interior of the process chamber 100 can be maintained at a pressure lower than normal pressure. The reaction byproducts generated in the process and the gas staying in the process space 101 may be discharged to the outside through the exhaust line 131.

The substrate supporting unit 200 supports the substrate W in the processing space 101. The substrate support unit 200 includes a support plate 210, a lift pin (not shown), a heater 220, and a support shaft 230.

The support plate 210 has a predetermined thickness and is provided with an original plate having a larger radius than the substrate W. [ A substrate providing groove on which the substrate W is placed may be formed on the upper surface of the support plate 210. According to the embodiment, the support plate 210 is not provided with a structure for fixing the substrate W, and the substrate W is provided to the process while being placed on the support plate 210. Alternatively, the support plate 210 may be provided as an electrostatic chuck for fixing the substrate W using electrostatic force, or may be provided as a chuck for fixing the substrate W in a mechanical clamping manner.

A plurality of lift pins are provided and located in each of the pin holes (not shown) formed in the support plate 210. The lift pins move up and down along the pin holes to load the substrate W onto the support plate 210 or unload the substrate W placed on the support plate 210. [

The heater 220 is provided inside the support plate 210. The heater 220 is provided as a helical coil and can be embedded in the support plate 210 at uniform intervals. The heater 220 is connected to an external power source (not shown) and generates heat by resistance to a current applied from an external power source. The generated heat is transferred to the substrate W via the support plate 210, and the substrate W is heated to a predetermined temperature.

The support shaft 230 is positioned below the support plate 210 and supports the support plate 210. The support plate 210 can be provided to be movable up and down by a driving member (not shown).

The gas supply unit 300 supplies the process gas into the process space 101 of the process chamber 100. The gas supply unit 300 may supply the process gas into the process chamber 100 through the gas supply hole 105 formed in the side wall of the process chamber 100. A plurality of gas supply holes 105 may be provided.

The microwave applying unit 400 applies a microwave to the antenna 500. The microwave application unit 400 includes a microwave generator 410, a first waveguide 420, a second waveguide 430, a phase shifter 440, and a matching network 450.

The microwave generator 410 generates a microwave.

The first waveguide 420 is connected to the microwave generator 410 and a passageway is formed therein. The microwave generated by the microwave generator 410 is transmitted to the phase converter 440 along the first waveguide 420.

The second waveguide 430 includes an outer conductor 432 and an inner conductor 434.

The outer conductor 432 extends downward in the vertical direction at the end of the first waveguide 420, and a passageway is formed therein. The upper end of the outer conductor 432 is connected to the lower end of the first waveguide 420 and the lower end of the outer conductor 432 is connected to the upper end of the cover 120.

The inner conductor 434 is located in the outer conductor 432. The inner conductor 434 is provided as a rod in the shape of a cylinder, and its longitudinal direction is arranged in parallel with the up-and-down direction. The upper end of the inner conductor 434 is inserted and fixed to the lower end of the phase shifter 440. The inner conductor 434 extends downward and its lower end is located inside the process chamber 100. The lower end of the inner conductor 434 is fixedly coupled to the center of the antenna 500. The inner conductor 434 is disposed perpendicularly to the upper surface of the antenna 500. The inner conductor 434 may be provided by sequentially coating a first plated film and a second plated film on a copper rod. According to one embodiment, the first plating film may be made of nickel (Ni), and the second plating film may be provided of gold (Au). The microwave is propagated mainly to the antenna 500 through the first plated film.

The microwave whose phase is converted by the phase converter 440 is transmitted to the antenna 500 along the second waveguide 430.

The phase shifter 440 is provided at a point where the first waveguide 420 and the second waveguide 430 are connected to change the phase of the microwave. The phase shifter 440 may be provided in the shape of a pointed cone. The phase shifter 440 propagates the microwave transmitted from the first waveguide 420 to the second waveguide 430 in a mode-converted state. The phase converter 440 may convert the microwave into TE mode to TEM mode.

The matching network 450 is provided in the first waveguide 420. The matching network 450 matches the microwave propagated through the first waveguide 420 to a predetermined frequency.

3 is a bottom view of the antenna 500 of FIG. 2 and 3, the antenna 500 is provided in a plate shape. The antenna 500 is disposed on the top of the substrate supporting unit 200. For example, the antenna 500 may be provided as a thin disc. The antenna 500 is disposed to face the support plate 210. A plurality of slots 501 are formed in the antenna 500. The slots 501 may be provided in a 'x' shape. Alternatively, the shape and arrangement of the slots may be varied. A plurality of slots 501 are arranged in a plurality of ring shapes in combination with each other. The area of the antenna 500 in which the slots 501 are formed is referred to as a first area A1 and the area of the antenna 500 in which the slots 501 are not formed is referred to as a second area B1, , B3). The first areas A1, A2, and A3 and the second areas B1, B2, and B3 each have a ring shape. A plurality of first regions A1, A2, and A3 are provided and have different radii from each other. The first areas A1, A2, and A3 have the same center and are spaced apart from each other in the radial direction of the antenna 500. [ A plurality of second regions B1, B2, and B3 are provided and have different radii from each other. The second regions B1, B2, and B3 have the same center and are disposed apart from each other in the radial direction of the antenna 500. [ The first areas A1, A2, and A3 are located between the adjacent second areas B1, B2, and B3, respectively. A hole 502 is formed in the center of the antenna 500. The lower end of the inner conductor 434 passes through the hole 502 and is coupled to the antenna 500. The microwaves are transmitted through the slots 501 to the dielectric plate 700.

Referring again to FIG. 2, the wave plate 600 is disposed on the top of the antenna 500 and is provided as a disk having a predetermined thickness. The chop panel 600 may have a radius corresponding to the inside of the cover 120. The wave plate 600 is provided with a dielectric such as alumina, quartz, or the like. The microwaves propagated in the vertical direction through the inner conductor 434 propagate in the radial direction of the wave plate 600. The wavelength of the microwave propagated to the wave plate 600 is compressed and resonated.

The quartz member is a member which is exposed to the generated plasma in the processing space 101 and is made of a material including quartz (SiO 2 ). The quartz member is provided by nitriding the surface before being assembled to the substrate processing apparatus 10 in order to prevent damage due to the etching due to the plasma reaction during the plasma processing process for the substrate. According to one embodiment, the quartz member may be a dielectric plate 700 or a liner 900. Alternatively, the quartz member may be various members that are exposed to the generated plasma in the processing space 101 and provided with a material containing quartz.

The dielectric plate 700 transfers the microwave from the antenna 500 to the processing space 101. The dielectric plate 700 is provided on the upper surface of the processing space 101. That is, the dielectric plate 700 is disposed at the bottom of the antenna 500 and is provided as a disk having a predetermined thickness. The dielectric plate 700 is provided as a dielectric such as quartz. The bottom surface of the dielectric plate 700 is provided with a concave surface recessed inward. The dielectric plate 700 may be positioned at the same height as the lower end of the cover 120. The side portion of the dielectric plate 700 is stepped so that the upper end has a larger radius than the lower end. The upper end of the dielectric plate (700) lies at the lower end of the cover (120). The lower end of the dielectric plate 700 has a smaller radius than the lower end of the cover 120 and maintains a predetermined distance from the lower end of the cover 120. The microwave is radiated into the process chamber 100 through the dielectric plate 700. The process gas supplied into the process chamber 100 by the electric field of the emitted microwaves is excited into a plasma state. According to the embodiment, the wave plate 600, the antenna 500, and the dielectric plate 700 may be in close contact with each other.

The liner 900 is installed on the side of the processing space 101, that is, on the inner wall of the processing chamber 100. The liner 900 prevents the inner walls of the process chamber 100 from being damaged by the plasma. The liner 900 may be provided with a dielectric material such as quartz. The liner 900 includes a body 910 and a flange 920.

The body 910 has a ring shape facing the inner wall of the process chamber 100. A through hole 912 is formed in the body 910 so as to be opposed to the gas supply holes 105. The process gas injected from the gas supply hole 105 flows into the process chamber 100 through the through hole 912.

The flange 920 is provided to extend from the outer wall of the body 910 to the interior of the walls of the process chamber 100. The flange 920 is provided in a ring shape surrounding the periphery of the body 910. The flange 920 may be provided on the top of the liner 900.

The present invention also provides a method of manufacturing a device for manufacturing an apparatus for processing a substrate using plasma. A method of manufacturing a device according to an embodiment of the present invention includes nitriding the surface of a component to be exposed to the plasma in the device to manufacture a component that is exposed to the plasma in the device, Assemble the parts to the unit. The parts exposed to the plasma in the device are provided with a material containing quartz.

Hereinafter, a method of manufacturing a device according to an embodiment of the present invention will be described using the substrate processing apparatus 10 of FIG. The part exposed to the plasma may be a quartz member of the substrate processing apparatus 10 of Fig. 2 described above. Accordingly, the part exposed to the plasma may be the dielectric plate 700 or the liner 900. [

4 is a flowchart illustrating a method of manufacturing a device according to an embodiment of the present invention. Referring to Figs. 2 and 4, the apparatus manufacturing method of the present invention includes a quartz member manufacturing step S10 and an apparatus assembling step S20.

The quartz member manufacturing step S10 is performed before the device assembling step S20. In the quartz member manufacturing step S10, a quartz member is manufactured.

The quartz member manufacturing step S10 includes a shaping step S11, a surface modification step S12, and a production completion step S13. The shape processing step S11, the surface modification step S12, and the manufacturing completion step S13 are performed sequentially with respect to each other.

In the shaping step S11, the quartz member is processed into a desired shape using a quartz material. For example, when the quartz member is the dielectric plate 700, the quartz member is machined into the shape of the dielectric plate 700, and when the quartz member is the liner 900, the quartz member is machined do.

5 is a view showing the surface modification step S12 of Fig. Referring to FIG. 5, in the surface modification step S12, a process of modifying the surface of the quartz member is performed. The surface modification step S12 includes a surface nitridation step S12a and a surface roughness adjustment step S12b.

In the surface nitrification step S12a, the surface of the quartz member is nitrided. In the surface roughness adjusting step (S12b), the roughness of the surface of the quartz member is adjusted. The surface nitriding step (S12a) and the surface roughness adjusting step (S12b) are performed simultaneously. For example, generally, in the surface roughness adjustment step (S12b), the surface roughness of the quartz member is adjusted by subjecting the quartz member to heat treatment. In this case, the heat treatment may be performed by a method such as RTP method, furnace pressurization method, or direct flame method. Therefore, in the case where the quartz member is heat-treated while supplying nitriding gas for providing the nitrogen component (N) to the quartz member in the surface modification step (S12), the surface nitriding step (S12a) and the surface roughness adjusting step (S12b) can be performed simultaneously. In this case, the heat treatment can be carried out by a direct flame method, which is carried out by bringing the flame directly into contact with the surface of the quartz member.

In the case of the direct flame process, the temperature of the flame is provided above the temperature at which the molecules of the nitrifying gas can dissociate into ions. Alternatively, the heat treatment can be performed in various ways that heat can be applied above the temperature at which the molecules of the nitrifying gas can be dissociated into ions such as the RTP process, the furnace pressurization process, and the like.

The heat treatment may be performed while supplying a combustion gas, an oxygen (O 2 ) gas, and a temperature-rising gas together with the nitriding gas. The combustion gas is a gas that is directly burned to generate a flame in the direct flame method. Oxygen gas is supplied to generate and maintain the flame generating combustion. The temperature-rising gas is supplied to raise the temperature of the flame. The temperature elevating gas may be provided as a gas containing hydrogen (H 2 ).

In the apparatus assembling step S20, the quartz member, which has been manufactured through the quartz member manufacturing step S10, is assembled to the apparatus. The apparatus assembling step S20 may be a step included in the apparatus manufacturing method of manufacturing the substrate processing apparatus. Alternatively, the apparatus assembling step S20 may be a step for replacing the quartz member which is damaged and is intended to be replaced.

Thereafter, a plasma seasoning step (S30) is carried out to prepare the interior of the substrate processing apparatus 10 in an appropriate state for carrying out a treatment process for the substrate. In this case, the process for nitriding the quartz member is not performed in the plasma seasoning step S30.

Thereafter, a substrate processing step (S40) is performed in which the substrate processing is performed in the substrate processing apparatus (10).

As described above, the process of nitriding the surface of the quartz member exposed to the plasma and provided with the material including the quartz material is performed before the process of assembling the quartz member into the apparatus, thereby minimizing the execution time of the plasma seasoning step S30 can do. Therefore, the amount of the dummy substrate used for preventing the substrate supporting unit 200 from being etched in the plasma seasoning step S30 can be minimized, and the preparation time for processing the substrate in the substrate processing apparatus 10 can be minimized Can be minimized.

W: substrate G: gap Gap:
10; Substrate processing apparatus 100: Process chamber
200: substrate holding unit 300: gas supply unit
400: microwave application unit 500: antenna plate
600: Chip plate 700: Dielectric plate
900: Liner S10: Quartz member manufacturing step
S12: Surface modification step S12a: Surface nitridation step
S12b: Surface roughness adjustment step S20: Device assembly step

Claims (19)

A quartz member manufacturing method for manufacturing a quartz member, which is provided in a substrate processing apparatus for processing a substrate by using a plasma and provided with a material including Quartz,
And a surface modification step of modifying the surface of the quartz member,
Wherein the surface modification step comprises heating the quartz member while supplying nitriding gas to the quartz member to supply the nitrogen component to the quartz member to adjust the surface roughness of the quartz member and to nitride the surface of the quartz member,
The quartz member,
A dielectric plate that transfers microwaves from the antenna to the interior of the process chamber,
A liner provided on an inner wall of the process chamber,
The heat treatment is carried out by bringing the flame directly into contact with the surface of the quartz member,
Wherein the heat treatment is performed while supplying a combustion gas directly burned to generate the flame, an oxygen (O2) gas for generating and maintaining the combustion, and a temperature-rising gas for raising the temperature of the flame. delete delete delete delete delete The method according to claim 1,
Wherein the temperature-elevating gas is provided as a gas containing hydrogen (H 2 ). The method according to claim 1,
Wherein the temperature of the flame is provided above a temperature at which the molecules of the nitriding gas can dissociate into ions. delete delete A quartz member manufacturing method for manufacturing a quartz member, which is provided in a substrate processing apparatus for processing a substrate by using a plasma and provided with a material including Quartz,
And a surface modification step of modifying the surface of the quartz member,
Wherein the surface modification step comprises heating the quartz member while supplying nitriding gas to the quartz member to supply the nitrogen component to the quartz member to adjust the surface roughness of the quartz member and to nitride the surface of the quartz member,
The quartz member is a dielectric plate provided on an upper surface of a processing space to be processed by the plasma or a liner provided on a side surface of the processing space,
The heat treatment is carried out by bringing the flame directly into contact with the surface of the quartz member,
Wherein the heat treatment is performed while supplying a combustion gas directly burned to generate the flame, an oxygen gas for generating and maintaining the combustion, and a heating gas for raising the temperature of the flame. 12. The method of claim 11,
Wherein the substrate processing apparatus is a device for applying a microwave to an antenna to generate a plasma from a gas supplied into the substrate processing apparatus. delete delete delete delete 1. A substrate processing apparatus for processing a substrate by using plasma,
A process chamber in which a processing space in which a substrate is processed is formed;
A substrate supporting unit for supporting the substrate in the processing space;
An antenna disposed on the substrate supporting unit and having a plurality of slots;
A microwave applying unit for applying a microwave to the antenna;
A gas supply unit for supplying gas into the processing space;
A quartz member exposed to the plasma and provided in a material comprising quartz,
Wherein the quartz member is heat treated to supply the nitride gas to the quartz member before the quartz member is assembled into the substrate processing apparatus to adjust the roughness of the surface of the quartz member, ≪ / RTI >
The quartz member,
A dielectric plate for transmitting a microwave from the antenna to the processing space,
Wherein the quartz member is a liner disposed on an inner wall of the process chamber,
The heat treatment is carried out by bringing the flame directly into contact with the surface of the quartz member,
Wherein the heat treatment is performed while supplying a combustion gas directly burned to generate the flame, an oxygen gas for generating and maintaining the combustion, and a temperature-rising gas for raising the temperature of the flame. delete delete
KR1020150148787A 2015-10-26 2015-10-26 Quartz member manufacturing method, apparatus manufacturing method and substrate treating apparatus KR101842116B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009102195A (en) * 2007-10-23 2009-05-14 Tosoh Quartz Corp Surface reforming apparatus for tubular glass article and manufacturing method of tubular silica glass jig

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JP2009102195A (en) * 2007-10-23 2009-05-14 Tosoh Quartz Corp Surface reforming apparatus for tubular glass article and manufacturing method of tubular silica glass jig

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