KR101829227B1 - Electrostatic chuck improved in electrostatic plate structure - Google Patents

Electrostatic chuck improved in electrostatic plate structure Download PDF

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Publication number
KR101829227B1
KR101829227B1 KR1020160016375A KR20160016375A KR101829227B1 KR 101829227 B1 KR101829227 B1 KR 101829227B1 KR 1020160016375 A KR1020160016375 A KR 1020160016375A KR 20160016375 A KR20160016375 A KR 20160016375A KR 101829227 B1 KR101829227 B1 KR 101829227B1
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KR
South Korea
Prior art keywords
electrostatic
insulating layer
electrode
electrostatic adsorption
dielectric layer
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Application number
KR1020160016375A
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Korean (ko)
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KR20170094978A (en
Inventor
안호갑
황정훈
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이지스코 주식회사
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Priority to KR1020160016375A priority Critical patent/KR101829227B1/en
Publication of KR20170094978A publication Critical patent/KR20170094978A/en
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Publication of KR101829227B1 publication Critical patent/KR101829227B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76846—Layer combinations

Abstract

The present invention relates to an electrostatic chuck for adsorbing an object to be attracted in the form of a substrate using an electrostatic force, comprising: a metal support; A multi-layered multi-layered structure joined to the metal support; And an electrode for electrostatic attraction formed in the multi-dielectric layer, wherein the multi-dielectric layer includes: a first insulating layer formed on the metal support and supporting the electrostatically-adsorbing electrode; and a second insulating layer formed on the first insulating layer, A second insulating layer covering the electrode for adsorption; and an electrostatic chucking dielectric layer formed on the second insulating layer in a sol-gel method and containing titanium (Ti) or niobium (Nb) do.

Description

ELECTROSTATIC CHUCK IMPROVED IN ELECTROSTATIC PLATE STRUCTURE [0002]

The present invention relates to an electrostatic chuck, and more particularly, to an electrostatic chuck having an electrostatic chuck capable of sucking an object to be attracted by electrostatic force in the form of a substrate.

BACKGROUND ART Electrostatic chucks for adsorbing an object to be attracted in the form of a substrate are widely used for chucking and fixing, joining, pressing, and moving a semiconductor wafer or a glass substrate for a display panel using an electrostatic force.

Such an electrostatic chuck for substrate adsorption is used in a process of injecting a liquid crystalglass into a lower TFT glass and an upper color filter glass in the case of a liquid crystal display (LCD), and in the case of an organic light emitting diode (OLED) It is used in the laminating process. In addition, it is widely used as a chucking mechanism for substrate adsorption in display module and tempered glass glass laminating process in the display area where touch screen type is applied, such as smart phones and tablet PCs.

In addition, as the substrate to be adsorbed recently has been largely cured, uniform temperature control on the substrate to be adsorbed has become very important. In particular, in semiconductor etching and deposition processes, uniform temperature control is important enough to determine the success of a production process. In order to quickly and uniformly remove heat generated by a plasma or other heat source, A cooling system for flowing a cooling gas between the adsorbing substrate and the electrostatic chuck is essential.

Convection and conduction of heat are very important technical mechanisms to rapidly remove the heat of the adsorbed substrate that has absorbed a lot of heat by a heat source such as a plasma. Particularly, heat transfer efficiency by conduction due to contact between the adsorbed substrate and the electrostatic chuck is important. In order to increase the heat transfer efficiency, the contact area between the adsorbed substrate and the electrostatic chuck must be increased or closely contacted to sufficiently emit heat. In order to do so, the thermal conductivity and thickness of each interlayer material act as an important factor and it is necessary to adopt a material with high thermal conductivity. However, there are limitations on material selection by various physical properties, and the best method is used for electrostatic adsorption It is important to make the dielectric layers as thin as possible. In addition, in the electrostatic chuck, since high electrostatic force per unit area and excellent withstand voltage characteristics are required, it is necessary to optimize characteristic values which tend to be opposite to each other.

Fig. 1 shows a main structure of a single-layer bipolar electrostatic chuck according to the prior art. As shown in the figure, the electrostatic chuck has a structure in which an electrostatic adsorption electrode 13 is inserted into an electrostatic plate which is in direct contact with an object to be attracted 1, and a lower insulating layer 11 is formed on the basis of the electrostatic adsorption electrode 13, And an upper dielectric layer 12 are formed. The lower insulating layer 11 has an electrical insulating function to block the leakage current, and the upper dielectric layer 12 has a direct relation to the electrostatic attraction force. The lower insulating layer 11 is connected to a metal support 10 which is designed to allow cooling water to flow as required and a DC power supply 20 for generating an electrostatic force is connected to an electrostatic adsorption electrode 13 .

Since the conventional electrostatic chuck having the above-described structure is different in physical and electrical characteristics from each material, there is a limitation in collective use for various processes having different required characteristics, and arcing or detachment reaction time In order to solve the problem, factors such as dielectric material, dielectric strength, dielectric, and electrode thickness need to be optimized.

Conventional ceramic electrostatic chucks, which are usually fabricated at a sintering temperature of 1500 ° C or higher, must maintain a dielectric thickness of 250 μm or more in order to maintain the withstand voltage characteristics. Therefore, they rapidly cool the superheated electrolyte by a heat source such as plasma There is a limit.

It is an object of the present invention to provide an electrostatic chuck having a structure in which an electrostatic plate located on an electrostatic adsorption electrode is composed of multiple layers having different physical properties.

According to an aspect of the present invention, there is provided an electrostatic chuck for adsorbing an object to be attracted by an electrostatic force, the electrostatic chuck comprising: a metal support; A multi-layered multi-layered structure joined to the metal support; And an electrode for electrostatic attraction formed in the multi-dielectric layer, wherein the multi-dielectric layer includes: a first insulating layer formed on the metal support and supporting the electrostatically-adsorbing electrode; and a second insulating layer formed on the first insulating layer, A second insulating layer covering the electrode for adsorption; and an electrostatic chucking dielectric layer formed on the second insulating layer in a sol-gel method and containing titanium (Ti) or niobium (Nb) do.

The dielectric layer for electrostatic adsorption preferably contains titanium dioxide (TiO 2 ) or niobium pentoxide (Nb 2 O 5 ).

The electrostatic adsorption dielectric layer preferably has a thickness of 15 to 50 mu m.

The second insulating layer may be formed of a thin film of a polyimide, polyamide, or polyethylene series having a withstand voltage characteristic of 200 V / 탆 or more and a thickness of 25 to 50 탆.

The electrode for electrostatic adsorption may be formed to have an electrode thickness of 1 to 5 mu m by a sputtering process, a screen printing process and a physical polishing process.

And the total thickness of the electrostatic adsorption dielectric layer and the second insulating layer is 100 占 퐉 or less.

According to the present invention, since the electrostatic plate has a multi-layered structure, the electrostatic layer having a relatively good physical property by adopting a different material for each layer, and the electrostatic layer having a relatively good dielectric property, It has an advantage that it can be fused to the above.

The dielectric layer for electrostatic adsorption included in the present invention is formed to contain titanium (Ti) or niobium (Nb) by sol-gel method and has excellent withstand voltage characteristics and can be made thin to a level of 100 탆 or less. A high electrostatic attraction force can be obtained because the thermoelectric conversion and cooling property is good and the complex can easily spread on the electric force line.

In addition, since the electrostatic adsorption electrode provided in the present invention can be formed thinly in the range of 1 to 5 mu m inside the electrostatic plate, it is possible to have a quick response time in electrostatic adsorption and desorption.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate preferred embodiments of the invention and, together with the description of the invention given below, serve to further the understanding of the technical idea of the invention. And should not be construed as limiting.
1 is a cross-sectional view showing a configuration of an electrostatic chuck according to a conventional technique.
2 is a cross-sectional view showing the configuration of an electrostatic chuck according to a preferred embodiment of the present invention.
FIG. 3 is a cross-sectional view schematically showing distribution of dielectric polarization and electric force lines in FIG. 2. FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms, and the inventor should appropriately interpret the concepts of the terms appropriately It should be interpreted in accordance with the meaning and concept consistent with the technical idea of the present invention based on the principle that it can be defined. Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

2 is a cross-sectional view showing the configuration of an electrostatic chuck according to a preferred embodiment of the present invention.

2, an electrostatic chuck according to a preferred embodiment of the present invention includes a metal support 100 of a predetermined shape made of a dielectric, a multi-layered multi-layered structure 110 bonded to the metal support 100, And an electrostatic adsorption electrode 120 provided in the electrostatic attraction electrode 110.

The metal support 100 is a metal member having a predetermined shape for supporting the electrostatic chuck and cooling it, and is bonded to the multi-dielectric layer 110 by a fluidizable silicone or acrylic-based bonding agent.

The multi-dielectric layer 110 includes a first insulating layer 111 and an electrostatic plate 112 formed on the first insulating layer 111 and involved in electrostatic adsorption.

The first insulating layer 111 is formed on the metal support 100 to support the electrostatic attraction electrode 120 and to electrically isolate the leakage current to be blocked. The first insulating layer 111 is formed of an oxide or nitride-based sintered ceramic thin plate, and a groove-like electrode pattern may be formed on the upper surface of the first insulating layer 111 by sandblasting using SiC powder for forming electrodes.

The electrostatic adsorption electrode 120 is formed on the electrode pattern formed on the first insulating layer 111. The thickness of the electrostatic adsorption electrode 120 is preferably 1 to 5 mu m. If the thickness of the electrostatic adsorption electrode 120 is too small to be less than 1 占 퐉, arcing or the like may occur even with a small leakage current, and the electrode line may be broken. On the other hand, when the thickness of the electrostatic adsorption electrode 120 is thicker than 5 탆, it takes a long time to attach and detach the object 1, which results in a decrease in productivity.

A face electrode made of a material such as copper, silver, aluminum, tungsten, or molybdenum is formed on the electrode pattern of the first insulating layer 111 by a screen printing process in the process of manufacturing the electrode 120 for electrostatic adsorption , Heat treatment is carried out at about 1,000 ° C (about 1,400 ° C for tungsten and molybdenum) for crystallization. After the heat treatment is completed, a mechanical polishing treatment is performed to lower the thickness to the range of 1 to 5 mu m.

Alternatively, in the manufacturing process of the electrostatic attraction electrode 120, a sputtering process that can perform a thin sheet process using a target metal may be applied.

The electrostatic adsorption electrode 120 can be formed thinly in the range of 1 to 5 mu m by the electrode manufacturing process as described above, thereby achieving an effect of accelerating electrostatic adsorption and desorption.

The electrostatic adsorption electrode 120 is connected to the electric supply line 201 through the electrode connection passage 111a passing through the first insulating layer 111 and is connected to the DC power supply 200 through the electric supply line 201 DC power is supplied. The connection between the surface of the electrostatic adsorption electrode 120 and the electric supply line 201 can be performed by brazing treatment or brazing treatment.

The electrostatic plate 112 is formed of at least two layers and includes a second insulating layer 112a covering the electrostatic adsorption electrode 120 and a second insulating layer 112b formed on the second insulating layer 112a and made of titanium (Ti) or niobium Nb) component. The dielectric layer 112b for electrostatic chucking contains an Nb component. Excellent heat transfer efficiency can be obtained when the thickness of the electrostatic plate 112, that is, the sum of the thicknesses of the electrostatic adsorption-use dielectric layer 112b and the second insulating layer 112a is 100 m or less, The static electricity per unit area of the alumina electrostatic chuck is increased by 2.5 times or more.

The second insulating layer 112a is formed so as to cover the pattern of the electrode 120 for electrostatic attraction formed on the first insulating layer 111. [ The second insulating layer 112a is formed of a material capable of causing dielectric polarization and having electrical insulation properties rather than dielectric properties. To this end, the second insulating layer 112a is preferably formed of a thin film of polyimide, polyamide, or polyethylene series having a withstand voltage characteristic of 200 V / m or more and a thickness of 25 to 50 m.

The electrostatic adsorption dielectric layer 112b is a portion directly in contact with the object-to-be-exposed body 1, and is provided with a sol-gel method for applying and curing the material on the second insulating layer 112a at a temperature of 200 deg. , And contains titanium (Ti) or niobium (Nb) components. More specifically, the electrostatic adsorption-use dielectric layer 112b is made of an oxide inorganic material containing titanium dioxide (TiO 2 ) or niobium pentoxide (Nb 2 O 5 ), so that it has a high dielectric constant which greatly affects the electrostatic force.

When the thickness of the electrostatic adsorption dielectric layer 112b is 50 μm or less, more preferably 15 to 50 μm, it is advantageous to form the electrostatic plate 112 with a thickness of 100 μm or less while minimizing arcing.

The electrostatic chuck according to a preferred embodiment of the present invention having the above-described structure is configured such that when power is supplied from the DC power supply 200 to the electrostatic attraction electrode 120, A dielectric polarization phenomenon occurs and an electric force line passing through the object complex 1 is generated to be electrostatically adsorbed. The height of the electric line is defined as a function of the applied voltage.

The electrostatic plate 112 of the multi-layered structure included in the multi-dielectric layer 110 has a configuration in which the electrostatic adsorption dielectric layer 112b is formed to contain titanium (Ti) or niobium (Nb) And can be manufactured with a thin thickness of 100 μm or less. Therefore, it is possible to rapidly remove heat due to excellent heat transfer to the lower portion of the electrostatic chuck, and the electrolyte (1) An attraction force can be obtained.

In addition, since the electrostatic adsorption electrode 120 is formed to be thin in the range of 1 to 5 μm inside the multi-dielectric layer 110, an electrostatic chuck having a fast response time during electrostatic adsorption and desorption can be realized.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not to be limited to the details thereof and that various changes and modifications will be apparent to those skilled in the art. And various modifications and variations are possible within the scope of the appended claims.

100: metal support 110: multi-
111: first insulating layer 112: electrostatic plate
112a: second insulating layer 112b: dielectric layer for electrostatic adsorption
120: electrostatic adsorption electrode 200: DC power supply

Claims (6)

1. An electrostatic chuck for adsorbing a substrate-like object to be attracted by an electrostatic force,
Metal support;
A multi-layered multi-layered structure joined to the metal support; And
And an electrostatic attraction electrode formed in the multi-layered structure,
The multi-
A first insulating layer formed on the metal support and supporting the electrostatic adsorption electrode;
A second insulating layer formed on the first insulating layer and covering the electrostatic adsorption electrode;
And a dielectric layer for electrostatic adsorption, which is formed on the second insulating layer in a sol-gel method and contains titanium (Ti) or niobium (Nb)
Wherein the first insulating layer is formed by an oxide or nitride-based sintered ceramic thin plate,
Wherein the second insulating layer is formed of a thin film of a polyimide, polyamide, or polyethylene series having a withstand voltage characteristic of 200 V / 탆 or more and a thickness of 25 to 50 탆,
Wherein the electrostatic adsorption dielectric layer has a thickness of 15 to 50 占 퐉,
Wherein the total thickness of the electrostatic adsorption dielectric layer and the second insulating layer is 100 占 퐉 or less. The method according to claim 1,
Wherein the electrostatic chucking dielectric layer contains titanium dioxide (TiO 2 ) or niobium pentoxide (Nb 2 O 5 ). delete delete The method according to claim 1,
Wherein the electrode for electrostatic adsorption is formed to have an electrode thickness of 1 to 5 占 퐉 by a sputtering process, a screen printing process and a physical polishing process. delete
KR1020160016375A 2016-02-12 2016-02-12 Electrostatic chuck improved in electrostatic plate structure KR101829227B1 (en)

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KR1020160016375A KR101829227B1 (en) 2016-02-12 2016-02-12 Electrostatic chuck improved in electrostatic plate structure

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KR1020160016375A KR101829227B1 (en) 2016-02-12 2016-02-12 Electrostatic chuck improved in electrostatic plate structure

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KR101829227B1 true KR101829227B1 (en) 2018-02-14

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309205B2 (en) 2018-10-23 2022-04-19 Samsung Display Co., Ltd. Electrostatic chuck and electrostatic adsorption apparatus having the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287379A (en) * 2006-04-13 2007-11-01 Shin Etsu Chem Co Ltd Heating element
JP2008147430A (en) * 2006-12-11 2008-06-26 Tomoegawa Paper Co Ltd Electrostatic sucking method

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287379A (en) * 2006-04-13 2007-11-01 Shin Etsu Chem Co Ltd Heating element
JP2008147430A (en) * 2006-12-11 2008-06-26 Tomoegawa Paper Co Ltd Electrostatic sucking method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11309205B2 (en) 2018-10-23 2022-04-19 Samsung Display Co., Ltd. Electrostatic chuck and electrostatic adsorption apparatus having the same

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