KR101805515B1 - High frequency modulator, method of modulating signal using the same and high frequency transmitter including the same - Google Patents

Abstract

The present invention provides a high frequency modulator having improved performance and properties. The high frequency modulator comprises: a resonator; a first varactor; and a second varactor. The resonator includes a first terminal receiving a carrier wave and a second terminal outputting a modulation signal. The first varactor is connected between the first terminal of the resonator and a first node. The second varactor is connected between the second terminal of the resonator and the first node. A resonance frequency is changed based on data signal applied to the first and second varactors, and the modulation signal is controlled based on the change of the resonance frequency.

Description

TECHNICAL FIELD [0001] The present invention relates to a high frequency modulator, a method of modulating a signal using the modulator, and a high frequency transmitter including the same. BACKGROUND OF THE INVENTION [0001]

More particularly, the present invention relates to a high frequency modulator, a signal modulation method using the high frequency modulator, and a high frequency transmitter including the high frequency modulator.

Modulation of a carrier signal by a data signal has been applied in various communication applications. A communication application that uses a high frequency carrier signal can include a modulator configured with a transmission line and a switch, wherein a MOSFET device can be used as a switch. The MOSFET device has characteristics such as a parasitic capacitance and a channel resistance other than 0, and the characteristics of the modulator can be deteriorated in a high frequency range of 100 GHz or more due to the above characteristics. Recently, various techniques for improving the performance of a modulator and a transmitter including the modulator in a high frequency range have been studied.

Korean Registered Patent No. 10-1526903 (registered on June 02, 2015)

It is an object of the present invention to provide a high frequency modulator with improved performance and characteristics.

Another object of the present invention is to provide a signal modulation method using the high-frequency modulator.

Yet another object of the present invention is to provide a high frequency transmitter including the high frequency modulator.

In order to accomplish the above object, a high frequency modulator according to embodiments of the present invention includes a resonator, a first varactor, and a second varactor. The resonator includes a first terminal for receiving a carrier signal and a second terminal for outputting a modulation signal. The first varactor is connected between the first terminal of the resonator and the first node. The second varactor is connected between the second terminal of the resonator and the first node. The resonance frequency is changed based on a data signal applied to the first and second varactors, and the modulation signal is controlled based on a change in the resonance frequency.

In one embodiment, when the data signal has a low level, the capacitance of the first and second varactors may increase and the resonant frequency may decrease. When the data signal has a high level, the capacitance of the first and second varactors may decrease and the resonant frequency may increase.

In one embodiment, when the data signal has the low level, the amplitude of the modulation signal may have a first amplitude. When the data signal has the high level, the amplitude of the modulation signal may have a second amplitude larger than the first amplitude.

In one embodiment, impedance matching may be performed based on the length of the transmission line constituting the resonator and the size of the first and second varactors.

In one embodiment, the high frequency modulator may further comprise a first load and a second load. The first load may be connected between the first terminal and the ground voltage. The second load may be connected between the second terminal and the ground voltage. The length of the transmission line and the magnitude of the first and second varactors are set so that the impedance of the resonator, the first and second varactors and the second load at the first terminal is the same as the impedance of the first load, Can be adjusted.

In one embodiment, the high frequency modulator may further comprise a first load and a second load. The first load may be connected between the first terminal and the ground voltage. The second load may be connected between the second terminal and the ground voltage. The impedance of the resonator, the first and second varactors and the first load at the second terminal is equal to the impedance of the second load, and the length of the transmission line and the magnitude of the first and second varactors Can be adjusted.

In one embodiment, the resonance frequency can be determined based on the length of the transmission line constituting the resonator and the capacitance of the first and second varactors.

In one embodiment, the length of the transmission line may be equal to the wavelength of the carrier signal.

In one embodiment, the transmission line constituting the resonator may be formed to have an Omega (?) Shape.

In one embodiment, the high frequency modulator may further comprise a shielding pattern. The shielding pattern may be formed to surround at least a part of the resonator.

In one embodiment, the high frequency modulator may further include a data supply unit. The data supply unit may include a first terminal receiving the data signal and a second terminal coupled to the first node.

In one embodiment, the data supply may comprise a first resistor, and first and second inverters. The first resistor may be coupled between the first terminal of the data supply and the ground voltage. The first and second inverters may be connected in series between a first terminal of the data supply and a second terminal of the data supply.

In another aspect of the present invention, there is provided a method of modulating a signal using a high frequency modulator according to embodiments of the present invention, the high frequency modulator including a resonator, a first varactor connected to a first terminal of the resonator, And a second varactor connected to a second terminal of the second varactor. And generates a modulated signal output from the second terminal of the resonator based on the carrier signal received at the first terminal of the resonator. A resonance frequency is changed based on a data signal applied to the first and second varactors, and the modulation signal is controlled based on a change in the resonance frequency.

In one embodiment, in controlling the modulated signal, when the data signal has a low level, the capacitance of the first and second varactors increases and the resonant frequency decreases to reduce the amplitude of the modulated signal 1 amplitude. The capacitance of the first and second varactors decreases and the resonance frequency increases to set the amplitude of the modulated signal to a second amplitude larger than the first amplitude when the data signal has a high level.

According to another aspect of the present invention, there is provided a high-frequency transmitter including a control circuit, an I / Q network circuit, and a damping circuit. The control circuit generates a bit control signal indicating data to be transmitted. The I / Q network circuit generates a first carrier signal of an in-phase component and a second carrier signal of a quadrature component based on an input signal. The attenuation circuit generates an output modulated signal corresponding to the data to be transmitted based on the bit control signal, the first carrier signal and the second carrier signal, and includes at least one high frequency modulator. Each of the at least one high-frequency modulator includes a resonator, a first varactor, and a second varactor. The resonator includes a first terminal for receiving a carrier signal and a second terminal for outputting a modulation signal. The first varactor is connected between the first terminal of the resonator and the first node. The second varactor is connected between the second terminal of the resonator and the first node. The resonance frequency is changed based on the bit control signal applied to the first and second varactors, and the modulation signal is controlled based on the change in the resonance frequency.

In one embodiment, the attenuation circuit may comprise a first high frequency modulator, a second high frequency modulator and an adder. The first high frequency modulator may generate a first modulated signal based on the bit control signal and the first carrier signal. The second high frequency modulator may generate a second modulated signal based on the bit control signal and the second carrier signal. The adder may sum the first modulated signal and the second modulated signal to generate the output modulated signal.

In one embodiment, the I / Q network circuit may determine the sign of the first carrier signal and the second carrier signal based on the bit control signal.

In one embodiment, the adder can determine the sign of the first modulated signal and the second modulated signal based on the bit control signal.

In one embodiment, the attenuation circuit may comprise an adder and a first high frequency modulator. The adder may sum up the first carrier signal and the second carrier signal to generate a third carrier signal. The first high frequency modulator may generate the output modulated signal based on the bit control signal and the third carrier signal.

In one embodiment, the data to be transmitted may be modulated based on a quadrature amplitude modulation (QAM) scheme.

The high frequency modulator according to the embodiments of the present invention can be implemented with a relatively small and simple structure and can change the resonance frequency by using the capacitance change of the varactor, The modulation signal can be controlled. Therefore, it is possible to have an improved signal transmission characteristic suitable for high frequency communication, and the performance of a high frequency transmitter and a communication system including the same can be improved.

1 is a diagram illustrating a high frequency modulator according to embodiments of the present invention.
FIGS. 2, 3a, 3b and 3c are views for explaining the operation of the high frequency modulator according to the embodiments of the present invention.
4A and 4B are cross-sectional views illustrating a structure of a high frequency modulator according to embodiments of the present invention.
5 is a view for explaining the operation of the high frequency modulator according to the embodiments of the present invention.
6 is a flowchart illustrating a signal modulation method using a high frequency modulator according to embodiments of the present invention.
7 is a flowchart showing an example of a step of controlling the modulation signal of FIG.
8 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.
9 is a diagram for explaining the operation of the high-frequency transmitter of FIG.
10 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.
11 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.
12 is a diagram for explaining the operation of the high frequency transmitter of FIG.
13 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.

For the embodiments of the invention disclosed herein, specific structural and functional descriptions are set forth for the purpose of describing an embodiment of the invention only, and it is to be understood that the embodiments of the invention may be practiced in various forms, The present invention should not be construed as limited to the embodiments described in Figs.

The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It is to be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but on the contrary, is intended to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms may be used for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

It is to be understood that when an element is referred to as being "connected" or "connected" to another element, it may be directly connected or connected to the other element, . On the other hand, when an element is referred to as being "directly connected" or "directly connected" to another element, it should be understood that there are no other elements in between. Other expressions that describe the relationship between components, such as "between" and "between" or "neighboring to" and "directly adjacent to" should be interpreted as well.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In the present application, the terms "comprise", "having", and the like are intended to specify the presence of stated features, integers, steps, operations, elements, components, or combinations thereof, , Steps, operations, components, parts, or combinations thereof, as a matter of principle.

Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries should be construed as meaning consistent with meaning in the context of the relevant art and are not to be construed as ideal or overly formal in meaning unless expressly defined in the present application .

On the other hand, if an embodiment is otherwise feasible, the functions or operations specified in a particular block may occur differently from the order specified in the flowchart. For example, two consecutive blocks may actually be performed at substantially the same time, and depending on the associated function or operation, the blocks may be performed backwards.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals are used for the same constituent elements in the drawings and redundant explanations for the same constituent elements are omitted.

1 is a diagram illustrating a high frequency modulator according to embodiments of the present invention.

Referring to FIG. 1, a high frequency modulator 100 includes a resonator 200, a first varactor 300a, and a second varactor 300b. The high frequency modulator 100 may further include a data supply unit 400, shield patterns 500a, 500b and 500c, a first load L1 and a second load L2.

The resonator 200 includes a first terminal T1 for receiving a carrier signal CRS and a second terminal T2 for outputting a modulation signal MS. The resonator 200 is constituted by a transmission line. For example, the transmission line may be formed of a conductive material such as a metal and / or a metal compound.

The first varactor 300a is connected between the first terminal T1 of the resonator 200 and the first node N1 and the second varactor 300b is connected between the second terminal T2 of the resonator 200 and the second varactor 300b. And the first node N1. The data signal DS received from the data supply unit 400 is applied to the first and second varactors 300a and 300b through the first node N1.

The resonance frequency of the high frequency modulator 100 is determined by the resonator 200, the first varactor 300a, and the second varactor 300b. At this time, the resonance frequency is changed based on the data signal DS, and the modulation signal MS is controlled based on the change of the resonance frequency. The determination and change of the resonance frequency and the control operation of the modulated signal MS will be described later with reference to Figs. 2, 3a, 3b and 3c.

In one embodiment, the transmission line constituting the resonator 200 may be formed to have an omega (?) Shape. The distance between the first terminal T1 and the second terminal T2 of the resonator 200 may be relatively short when the transmission line has an omega shape so that the first and second varactors 300a, The length of the signal line between the first node N1 and the first node N1 may be reduced. Although not shown, the transmission line may have a shape of an arbitrary closed curve or a part of an arbitrary closed curve so that the length of a signal line between the first and second varactors 300a and 300b and the first node N1 is reduced . Also, according to the embodiment, the resonator 200 may be implemented in the form of a ring resonator having a capacitive coupling structure or an inductive coupling structure.

The data supply unit 400 may include a first terminal for receiving the data signal DS and a second terminal connected to the first node N1. The data supply unit 400 may be implemented in the form of a buffer including a first resistor R1, a first inverter 410, and a second inverter 420. [

The first resistor R1 may be coupled between the first terminal of the data supply 400 and the ground voltage. The first and second inverters 410 and 420 may be connected in series between the first terminal and the second terminal of the data supply unit 400. The first inverter 410 may include a first PMOS transistor TP1 and a first NMOS transistor TN1 connected between the power supply voltage VDD and the ground voltage, A second PMOS transistor TP2 and a second NMOS transistor TN2 connected between the ground voltage VDD and the ground voltage. The gate electrodes of the transistors TP1 and TN1 may be connected to the first terminal of the data supply unit 400 and the gate electrodes of the transistors TP2 and TN2 may be connected to the drain electrodes of the transistors TP1 and TN1 And the drain electrodes of the transistors TP2 and TN2 may be connected to the second terminal of the data supply unit 400. [

The shielding patterns 500a, 500b, and 500c may be formed to surround at least a part of the resonator 200. For example, the shielding pattern 500a, 500b, 500c may have a shape in which some of the closed curves have an open shape and specifically receive a signal (e.g., CRS or DS) And a partly opened shape for outputting the output signal. For example, the shielding patterns 500a, 500b, and 500c may be formed of a conductive material such as a metal and / or a metal compound. Although not shown, the shield patterns 500a, 500b, and 500c may be connected to the ground voltage, and noise may be blocked by the shield patterns 500a, 500b, and 500c.

The first load (L1) may be connected between the first terminal (T1) of the resonator (200) and the ground voltage. The second load (L2) may be connected between the second terminal (T2) of the resonator (200) and the ground voltage.

FIGS. 2, 3a, 3b and 3c are views for explaining the operation of the high frequency modulator according to the embodiments of the present invention.

1 and 2, the resonance frequency of the high frequency modulator 100 according to the embodiments of the present invention is determined by the resonator 200, the first varactor 300a, and the second varactor 300b . At this time, the high frequency modulator 100 may have a characteristic that the signal is not transmitted relatively at the resonance frequency. For example, as shown in FIG. 2, when the resonance frequency is the first frequency f1, a signal transmission characteristic (for example, The S21 coefficient may decrease and the signal transmission characteristic may decrease in the second frequency range of the specific range around the second frequency f2 when the resonance frequency is the second frequency f2. At this time, the signal transmission characteristic may be lowest at the resonance frequency (for example, f1 or f2).

The first and second varactors 300a and 300b included in the high-frequency modulator 100 according to the embodiments of the present invention may be formed in the same manner as the first and second varactors 300a and 300b, The capacitance can be changed based on the data signal DS. As the capacitance of the first and second varactors 300a and 300b varies, the resonant frequency of the high frequency modulator 100 can be changed.

Specifically, the resonator 200 can be modeled as an inductor, and the first and second varactors 300a and 300b can be modeled as a capacitor. At this time, the resonant frequency of the high-frequency modulator 100 can be determined based on the following equation (1).

[Equation 1]

f = 1 / (L * C) ^1/2

In Equation (1), f represents the resonance frequency, L represents the inductance of the resonator 200, and C represents the combined capacitance of the first and second varactors 300a and 300b. For example, the combined capacitance may be the sum of the first capacitance of the first varactor 300a and the second capacitance of the second varactor 300b.

When the data signal DS is not applied to the first varactor 300a or when the data signal DS applied to the first varactor 300a has a low level (for example, about 0 V) The first capacitance may be determined only in consideration of the intrinsic capacitance of the varactor 300a (for example, the capacitance due to the insulating material), for example, the first capacitance may be a first value. On the other hand, when the data signal DS applied to the first varactor 300a has a high level (for example, about 1 V), the capacitance due to the depletion region together with the intrinsic capacitance is considered together The first capacitance may be determined, for example, the first capacitance may be a second value less than the first value. The second capacitance of the second varactor 300b may also be changed similarly to the first capacitance.

In other words, when the data signal DS applied to the first and second varactors 300a and 300b has the low level (that is, when the level of the data signal DS is changed from the high level to the low level The first and second capacitances of the first and second varactors 300a and 300b may increase and have a relatively large value, and in this case, The resonance frequency decreases according to Equation (1) above and can have a relatively small value. In FIG. 2, the signal transfer characteristic when the data signal DS has the low level is shown as an off-state of the solid line. For example, when the data signal DS has the low level The resonance frequency may be set to the first frequency f1.

When the data signal DS applied to the first and second varactors 300a and 300b has the high level (that is, when the level of the data signal DS transitions from the low level to the high level) The first and second capacitances of the first and second varactors 300a and 300b may be reduced to have a relatively small value when the data signal DS is increased, The resonance frequency increases according to Equation (1) and can have a relatively large value. In FIG. 2, the signal transmission characteristic in the case where the data signal DS has the high level is shown as an on-state of a dotted line. For example, when the data signal DS has the high level The resonance frequency may be set to a second frequency f2 higher than the first frequency f1.

When the signal transmission characteristic is changed as shown in Fig. 2, the level of the data signal DS can be changed to effectively control the transmission of the signal having the first frequency f1. For example, when the data signal DS has the high level, the signal having the first frequency f1 can be transmitted, and when the data signal DS has the low level, lt; RTI ID = 0.0 > f1 < / RTI >

In one embodiment, the inductance of the resonator 200 may be determined according to the length of the transmission line constituting the resonator 200. Therefore, the resonance frequency can be determined based on the length of the transmission line and the capacitance of the first and second varactors 300a and 300b. For example, the length of the transmission line may indicate the distance between the first terminal T1 and the second terminal T2.

In one embodiment, as the Q factor of the resonator 200 increases, the magnitude of the slope at which the signal transfer characteristic decreases in the signal transfer characteristic curve shown in FIG. 2 may increase. In other words, as the Q factor of the resonator 200 increases, the width of the first frequency range and the width of the second frequency range in which the signal transmission characteristic decreases may decrease.

Referring to FIGS. 1, 2, 3a, 3b and 3c, in the high frequency modulator 100 according to the embodiments of the present invention, the resonance frequency may vary according to the level of the data signal DS, The amplitude of the modulation signal MS can be controlled based on the difference (Fig. 2D) of the signal transmission characteristics due to the change.

As shown in FIG. 3A, the carrier signal CRS received at the first terminal T1 of the resonator 200 may have a constant frequency and amplitude. For example, the carrier signal CRS may be generated in the oscillator, and the frequency of the carrier signal CRS may be the first frequency f1, which is the resonance frequency in the off-state of FIG. For example, the frequency of the carrier signal (CRS) may be a relatively high frequency of about 100 GHz or more.

In one embodiment, the length (e.g., l) of the transmission line constituting the resonator 200 may be implemented such that it is substantially equal to the wavelength (e.g.,?) Of the carrier signal (CRS). Since the wavelength of the carrier signal CRS is a reciprocal of the frequency of the carrier signal CRS, the resonator 200 may be relatively small in size.

The data signal DS applied to the first and second varactors 300a and 300b may toggle or swing between the high level and the low level as shown in FIG. For example, the data signal DS may have the high level between time 0 and time t1, between time t2 and time t3, and between time t4 and time t5, between time t1 and time t2, and at time t3 Lt; RTI ID = 0.0 > t4. ≪ / RTI >

As shown in Fig. 3C, the modulation signal MS output from the second terminal T2 of the resonator 200 can be amplitude-controlled based on the data signal DS.

For example, between time 0 and time t1, the data signal DS has the high level, thereby reducing the first and second capacitances and increasing the resonant frequency. Accordingly, the high-frequency modulator 100 may have the same signal transmission characteristics as the on-state of FIG. 2, and may pass the carrier signal CRS having the first frequency f1.

Also, between time t1 and time t2, the data signal DS has the low level, so that the first and second capacitances increase and the resonant frequency can decrease. Accordingly, the high frequency modulator 100 may have the same signal transmission characteristics as the off-state of FIG. 2 and may block the carrier signal CRS having the first frequency f1.

In other words, when the data signal DS has the low level, the amplitude of the modulation signal MS decreases and can have a relatively small first amplitude, and when the data signal DS has the high level The amplitude of the modulation signal MS may have a second amplitude larger than the first amplitude. For example, the second amplitude may be substantially equal to the amplitude of the carrier signal (CRS). On the other hand, the frequency of the modulation signal MS may be substantially equal to the frequency of the carrier signal CRS.

The operation between time t2 and time t3 and between time t4 and time t5 may be substantially the same as the operation between time 0 and time t1 and the operation between time t3 and time t4 may be performed from time t1 to time t2 May be substantially the same as the operation between.

On the other hand, referring to Figs. 2, 3a, 3b and 3c, when the amplitude of the modulation signal MS decreases and the data signal DS has the high level when the data signal DS has the low level, The present invention is not limited to this and the amplitude of the modulation signal MS may be decreased when the data signal DS has the high level and the data signal DS may be amplified The amplitude of the modulation signal MS may be increased so as to have a low level.

Referring to FIG. 1 again, in the high frequency modulator 100 according to the embodiments of the present invention, the length of the resonator constituting the resonator 200 and the length of the first and second varactors 300a and 300b So that impedance matching can be performed.

More specifically, the impedance ZA that is viewed from the first terminal T1 to the resonator 200, the first and second varactors 300a and 300b, and the second load L2 is applied to the first terminal T1 The length of the transmission line and the size of the first and second varactors 300a and 300b are adjusted so as to be equal to the impedance Z1 (i.e., the impedance of the first load L1) viewed from the first load L1 . The impedance ZB from the second terminal T2 to the resonator 200 and the first and second varactors 300a and 300b and the first load L1 is greater than the impedance ZB from the second terminal T2 to the second terminal T2. The length of the transmission line and the size of the first and second varactors 300a and 300b can be adjusted so as to be equal to the impedance Z2 viewed from the load L2 (i.e., the impedance of the second load L2) have.

According to the embodiment, the size of the first varactor 300a and the size of the second varactor 300b may be substantially the same or may be different from each other. Since the capacitance of the first and second varactors 300a and 300b is determined by the size of the first and second varactors 300a and 300b, the first capacitance of the first varactor 300a, The second capacitances of the first and second capacitors 300a and 300b may be substantially the same or may be different from each other.

4A and 4B are cross-sectional views illustrating a structure of a high frequency modulator according to embodiments of the present invention.

Referring to FIGS. 1 and 4A, the resonator 200 and the varactors 300a and 300b may be formed on different layers on the semiconductor substrate 10.

More specifically, the first and second varactors 300a and 300b may be formed on the semiconductor substrate 10 and the first insulating film 20 may be formed on the first and second varactors 300a and 300b . The first and second varactors 300a and 300b and the first insulating layer 20 may constitute a first layer on the semiconductor substrate 10. [

A resonator 200 may be formed on the semiconductor substrate 10 on which the first and second varactors 300a and 300b are formed and the second insulating film 30 May be formed. For example, the resonator 200 can be formed by laminating and patterning a conductive material including a metal such as copper, tungsten, titanium, aluminum, and the like. The resonator 200 and the second insulating layer 30 may form a second layer on the first layer.

The first varactor 300a may be connected to the resonator 200 through a first contact 22a penetrating a part of the first insulating film 20. [ The second varactor 300b may be connected to the resonator 200 through a second contact 22b penetrating a part of the first insulating film 20. [ A portion where the first contact 22a contacts the resonator 200 may correspond to the first terminal T1 of the resonator 200 and a portion where the second contact 22b contacts the resonator 200 may correspond to the resonator 200, And the second terminal T2 of the second transistor M2.

Although not shown, the shielding patterns 500a, 500b and 500c may be formed so as to surround at least a part of the resonator 200 in the same layer as the resonator 200 (for example, the second layer).

Referring to FIGS. 1 and 4B, a first varactor 300a includes a first impurity region 310a (e.g., a source region), a second impurity region 320a (e.g., a drain region) (330a) and a gate insulating film (340a).

The first and second impurity regions 310a and 320a may be formed in the semiconductor substrate 10. For example, the first and second impurity regions 310a and 320a can be provided by forming (n +) type regions in the n-type semiconductor substrate 10 using an ion implantation process.

The gate electrode 330a and the gate insulating film 340a may be formed on the semiconductor substrate 10. The gate insulating film 340a is formed using a material having a high dielectric constant, for example, silicon oxide (SiOx), silicon oxynitride (SiOxNy), silicon nitride (SiNx), germanium oxynitride (GeOxNy), germanium silicon oxide (GeSixOy) Can be formed. The gate electrode 330a may be formed by laminating a gate conductive film on the gate insulating film 340a and then patterning the laminated gate conductive film. The gate conductive film may be formed using polysilicon, a metal, and / or a metal compound.

A gate node GN connected to the gate electrode 330a may constitute a first electrode of the first varactor 300a and a body node connected to the first and second impurity regions 310a and 320a BN can constitute the second electrode of the first varactor 300a. One of the first and second electrodes of the first varactor 300a may be connected to the first terminal T1 of the resonator 200 and the other of the first and second electrodes may be connected to the first node T1 of the resonator 200, (N1).

Although not shown, the structure of the second varactor 300b may be substantially the same as the structure of the first varactor 300a.

5 is a view for explaining the operation of the high frequency modulator according to the embodiments of the present invention.

The embodiment of FIG. 5 may be substantially the same as the embodiment of FIG. 2, except that a mid-state signal transfer characteristic curve is added.

Referring to FIGS. 1 and 5, the resonator 200, the first varactor 300a, and the second varactor 300b are connected to the resonance frequency of the high frequency modulator 100 according to the embodiments of the present invention, And the capacitance of the first and second varactors 300a and 300b may be changed based on the data signal DS and the resonance frequency may be changed. At this time, the data signal DS may have three levels.

Specifically, when the data signal DS applied to the first and second varactors 300a and 300b has an intermediate level (for example, about 0.5 V) between the low level and the high level, Each of the first and second capacitances of the first and second varactors 300a and 300b has a value when the data signal DS is at the low level and a value when the data signal DS is at the high level And the resonance frequency may have a value between a value when the data signal DS is at the low level and a value when the data signal DS is at the high level. In FIG. 5, the signal transmission characteristic in the case where the data signal DS has the intermediate level is shown as a mid-state. For example, when the data signal DS has the intermediate level, (f3) between the first frequency f1 and the second frequency f2.

The operation in the on-state and the off-state of FIG. 5 may be substantially the same as the operation in the on-state and the off-state of FIG.

In the high frequency modulator 100 according to the embodiments of the present invention, when the frequency of the carrier signal (CRS) is the first frequency (f1), the resonance frequency can be changed according to the level of the data signal The amplitude of the modulation signal MS can be controlled based on the difference (D1 and D2 in Fig. 5) of the signal transmission characteristics due to the change of the resonance frequency.

On the other hand, although not shown, the data signal DS may have four or more levels according to the embodiment.

6 is a flowchart illustrating a signal modulation method using a high frequency modulator according to embodiments of the present invention.

1 and 6, a high frequency modulator 10 according to embodiments of the present invention includes a resonator 200, a first varactor 300a connected to a first terminal T1 of the resonator 200, And a second varactor (300b) connected to the second terminal (T2) of the main body (200). The resonance frequency of the high frequency modulator 100 is determined by the resonator 200, the first varactor 300a, and the second varactor 300b.

In the signal modulation method according to the embodiments of the present invention, the signal is outputted from the second terminal T2 of the resonator 200 based on the carrier signal (CRS) received at the first terminal T1 of the resonator 200 And generates a modulation signal MS (step S100). For example, the carrier signal CRS may have a constant frequency and amplitude, and the modulating signal MS may have a frequency that is substantially the same as the carrier signal CRS.

The resonance frequency is changed based on the data signal DS applied to the first and second varactors 300a and 300b and the modulation signal MS is controlled based on the change in the resonance frequency (step S200) . For example, the data signal DS is applied to the first and second varactors 300a and 300b through the first node N1. For example, the amplitude of the modulated signal MS can be controlled based on the level of the data signal DS.

7 is a flowchart showing an example of a step of controlling the modulation signal of FIG.

1, 6 and 7, in the case where the data signal DS has a low level (for example, about 0 V) in controlling the modulation signal MS (Step S200), the first and second The capacitance of the varactors 300a and 300b increases and the resonance frequency decreases so that the amplitude of the modulation signal MS can be set to the first amplitude (step S210).

For example, as described above with reference to FIGS. 2, 3a, 3b and 3c, when the data signal DS has the low level, the high-frequency modulator 100 increases the capacitance and decreases the resonance frequency And thus can have off-state signal transmission characteristics of FIG. Accordingly, the transmission of the carrier signal CRS having the first frequency f1 can be blocked, and the modulation signal MS can have the first amplitude which is relatively small.

The capacitance of the first and second varactors 300a and 300b decreases and the resonance frequency increases so that the modulated signal MS is at a low level when the data signal DS has a high level (e.g., about 1V) To a second amplitude larger than the first amplitude (step S220).

For example, as described above with reference to Figs. 2, 3a, 3b and 3c, when the data signal DS has the high level, the high-frequency modulator 100 can reduce the capacitance and increase the resonance frequency And thus can have on-state signal transmission characteristics of FIG. Accordingly, the carrier signal CRS having the first frequency f1 can be transmitted, and the modulation signal MS can have the second amplitude having a relatively large value. For example, the second amplitude may be substantially equal to the amplitude of the carrier signal (CRS).

On the other hand, although not shown, when the data signal DS has an intermediate level (for example, about 0.5 V) between the low level and the high level, based on the change in the capacitance and the change in the resonance frequency , The amplitude of the modulation signal MS may be set to a third amplitude larger than the first amplitude and smaller than the second amplitude.

8 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention. FIG. 9 is a view for explaining the operation of the high-frequency transmitter of FIG. 8 and shows the arrangement of constellation points corresponding to the output of the high-frequency transmitter of FIG.

8 and 9, the high frequency transmitter 1000a includes a control circuit 1100a, an I / Q network circuit 1200a and an attenuation circuit 1300a. The high-frequency transmitter 1000a may further include an antenna 1400. [

The control circuit 1100a generates a bit control signal indicating data to be transmitted. The bit control signal indicates the direction (i.e., sign) of vectors (e.g., I1, -I1, I2, -I2, Q1, -Q1, Q2, -Q2 in FIG. 9) A first bit control signal BC1 for adjusting the size of the vectors, and second and third bit control signals BC2 and BC3 for adjusting the sizes of the vectors. The starting point of all the vectors in FIG. 9 may be the origin where the I axis and the Q axis meet.

The I / Q network circuit 1200a generates the first carrier signal CRSI1 and the second carrier signal CRSQ1 based on the input signal IS. For example, the input signal IS may be generated in an oscillator. The first carrier signal CRSI1 is a signal of an in-phase component and may be substantially the same as the input signal IS. The second carrier signal CRSQ1 is a signal of a quadrature component and can be generated by delaying the input signal IS. For example, the first carrier signal CRSI1 may be a sine signal and the second carrier signal CRSQ1 may be a cosine signal.

The attenuation circuit 1300a outputs an output modulated signal corresponding to the data to be transmitted based on the bit control signals (for example, BC2 and BC3), the first carrier signal CRSI1 and the second carrier signal CRSQ1 OMS1). The output modulated signal OMS1 may be output via the antenna 1400. [

The attenuation circuit 1300a may modulate the data to be transmitted based on a quadrature amplitude modulation (QAM) scheme. For example, the attenuation circuit 1300a may generate an output modulated signal OMS1 based on a 16-QAM scheme. In the 16-QAM system, the output modulation signal OMS1 includes 16 constellation points P1, P2, P3, P4, P5, P6, P7, P8, P9, P10, P11, P12, P13 , P14, P15, P16).

The attenuation circuit 1300a is implemented with at least one high frequency modulator. Each high frequency modulator may be a high frequency modulator (100 of FIG. 1) according to embodiments of the present invention. Each of the high frequency modulators includes a resonator, a first varactor connected between the first terminal of the resonator and the first node, and a second varactor connected between the second terminal of the resonator and the first node, Generates a modulated signal output from a second terminal of the resonator based on a carrier signal received at a first terminal of the resonator, and changes a resonance frequency based on a data signal applied to the first and second varactors, And controls the modulation signal based on a change in the resonance frequency.

Specifically, the attenuation circuit 1300a may include a first high-frequency modulator 1310, a second high-frequency modulator 1320, and an adder 1330a. The first high frequency modulator 1310 can generate the first modulated signal MS11 based on the second bit control signal BC2 and the first carrier signal CRSI1. The second high frequency modulator 1320 may generate the second modulated signal MS21 based on the third bit control signal BC3 and the second carrier signal CRSQ1. In the first high frequency modulator 1310, the second bit control signal BC2 and the first carrier signal CRSI1 may correspond to the data signal DS and the carrier signal CRS of FIG. 1, respectively, and the second high frequency modulator The third bit control signal BC3 and the second carrier signal CRSQ1 may correspond to the data signal DS and the carrier signal CRS of FIG. The adder 1330a may generate the output modulated signal OMS1 by summing the first modulated signal MS11 and the second modulated signal MS21.

8, the I / Q network circuit 1200a can determine the sign of the first carrier signal CRSI1 and the sign of the second carrier signal CRSQ1 based on the first bit control signal BC1 . For example, based on the first bit control signal BC1, the first carrier signal CRSI1 may be one of the first I-vector (I1 in Fig. 9) and the second I-vector (-I1 in Fig. 9) And the second carrier signal CRSQ1 may be set to correspond to one of the first Q-vector (Q1 in Fig. 9) and the second Q-vector (Q1 in Fig. 9). The first I-vector I1 and the second I-vector I1 may correspond to sin (t) and -sin (t), respectively, and the first Q-vector Q1 and the second Q- -Q1 may correspond to cos (t) and -cos (t), respectively.

The first high frequency modulator 1310 can generate the first modulated signal MS11 by adjusting the size of the first carrier signal CRSI1 based on the second bit control signal BC2. For example, when the second bit control signal BC2 has a low level, the first modulated signal MS11 is divided into a first I-vector I1 and a second I-vector I2 substantially equal to the first carrier signal CRSI1. 2 < / RTI > I-vector (-I1). When the second bit control signal BC2 has a high level, the first modulated signal MS11 is the one of the third I-vector (I2 in Fig. 9) and the fourth I-vector (-I2 in Fig. 9) . In other words, the first modulated signal MS11 includes first to fourth I-vectors I1, -I1, I2, -I2 based on the second bit control signal BC2 and the first carrier signal CRSI1. Lt; / RTI >

Similar to the first high frequency modulator 1310, the second high frequency modulator 1320 adjusts the size of the second carrier signal CRSQ1 based on the third bit control signal BC3 to generate the second modulated signal MS21 Lt; / RTI > The second modulated signal MS21 may be set to correspond to one of the first through fourth Q-vectors (Q1, -Q1, Q2, -Q2 in FIG. 9).

The adder 1330a adds the first modulated signal MS11 and the second modulated signal MS21 to generate an output modulated signal OMS1 corresponding to one of the first through sixteenth constellation points P1 through P16 . For example, when the first modulated signal MS11 corresponds to the first I-vector I1 and the second modulated signal MS21 corresponds to the first Q-vector Q1, the output modulated signal OMS1 May correspond to the first constellation point P1.

In one embodiment, each of the first to sixteenth constellation points P1 to P16 includes 4 bits of data 0000, 0001, 0010, 0011, 0100, 0101, 0110, 0111, 1000, 1001, 1010, 1011, 1100 , 1101, 1110, and 1111, respectively. At this time, the upper two bits may correspond to the first bit control signal BC1, the least significant bit may correspond to the second bit control signal BC2, the second lower bit may correspond to the third bit control signal BC3, . For example, when the most significant bit is 0 or 1, the sign of the Q-vector may be + (e.g. Q1) or - (e.g., -Q1), and when the second most significant bit is 0 or 1 The sign of the I-vector may be + (e.g., I1) or - (e.g., -I1). Vector may be of a first size (e.g., I1) or a second size (e.g., I2) when the least significant bit is 0 or 1, and Q - vector may be of a first size (e.g., Q1) or a second size (e.g., Q2).

10 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.

9 and 10, the high frequency transmitter 1000b includes a control circuit 1100a, an I / Q network circuit 1200b, and an attenuation circuit 1300b, and may further include an antenna 1400. [

The control circuit 1100a and the antenna 1400 of Fig. 10 may be substantially the same as the control circuit 1100a and the antenna 1400 of Fig. 8, respectively.

The I / Q network circuit 1200b generates the first carrier signal (CRSI2) of the in-phase component and the second carrier signal (CRSQ2) of the quadrature component based on the input signal IS.

The attenuation circuit 1300b outputs an output modulation signal corresponding to the data to be transmitted based on the bit control signals (for example, BC1, BC2, BC3), the first carrier signal (CRSI2) and the second carrier signal Signal OMS1. The attenuation circuit 1300b may include a first high frequency modulator 1310, a second high frequency modulator 1320 and an adder 1330b. The first high frequency modulator 1310 may generate the first modulated signal MS12 based on the second bit control signal BC2 and the first carrier signal CRSI2. The second high frequency modulator 1320 may generate the second modulated signal MS22 based on the third bit control signal BC3 and the second carrier signal CRSQ2. The adder 1330b may generate the output modulated signal OMS1 by summing the first modulated signal MS12 and the second modulated signal MS22 based on the first bit control signal BC1.

In the embodiment of Fig. 10, the first carrier signal CRSI2 may be set to correspond to a first I-vector (I1 in Fig. 9), and the second carrier signal CRSQ2 may be set to correspond to a first Q- Lt; RTI ID = 0.0 > Q1) < / RTI >

The first high frequency modulator 1310 can generate the first modulated signal MS12 by adjusting the size of the first carrier signal CRSI2 based on the second bit control signal BC2, May generate the second modulated signal MS22 by adjusting the size of the second carrier signal (CRSQ2) based on the third bit control signal BC3. The first modulated signal MS12 may be set to correspond to one of the first I-vector I1 and the third I-vector (I2 of FIG. 9), and the second modulated signal MS22 may be set to correspond to one of the first Q- Vector Q1 and the third Q-vector (Q2 in Fig. 9).

In the embodiment of Fig. 10, the adder 1330b can determine the sign of the first modulated signal MS12 and the sign of the second modulated signal MS22 based on the first bit control signal BC1. For example, based on the first bit control signal BC1, the sign of the first modulated signal MS12 can be determined to be + or -, and the sign of the second modulated signal MS22 can be determined to be + or - have. The adder 1330b may generate the output modulated signal OMS1 by summing the first modulated signal MS12 and the second modulated signal MS22 based on the determined sign. The output modulated signal OMS1 generated by the high frequency transmitter 1000b of FIG. 10 may be substantially the same as the output modulated signal OMS1 generated by the high frequency transmitter 1000a of FIG.

11 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention. FIG. 12 is a diagram for explaining the operation of the high-frequency transmitter of FIG. 11 and shows the arrangement of the constellation points corresponding to the output of the high-frequency transmitter of FIG.

11 and 12, the high frequency transmitter 1000c includes a control circuit 1100c, an I / Q network circuit 1200a, and an attenuation circuit 1300c, and may further include an antenna 1400. [

The I / Q network circuit 1200a and the antenna 1400 in FIG. 11 may be substantially the same as the I / Q network circuit 1200a and the antenna 1400, respectively, in FIG.

The control circuit 1100c generates a bit control signal indicating data to be transmitted. The bit control signal includes a first bit control signal for adjusting the direction of vectors related to the data to be transmitted (for example, CA1, CB1, CC1, CD1, CA2, CB2, CC2, BC1), and a fourth bit control signal (BC4) for adjusting the size of the vectors. The starting point of all the vectors in FIG. 12 may be the origin where the I axis and the Q axis meet.

The attenuation circuit 1300c outputs the output modulated signal OMS2 corresponding to the data to be transmitted based on the bit control signal (e.g., BC4), the first carrier signal CRSI1 and the second carrier signal CRSQ1, . For example, the attenuation circuit 1300c may generate an output modulated signal OMS2 based on an 8-QAM scheme. In the 8-QAM scheme, the output modulation signal OMS2 may have a value corresponding to one of the eight constellation points PA, PB, PC, PD, PE, PF, PG, have.

The attenuation circuit 1300c is implemented with at least one high frequency modulator according to embodiments of the present invention. Specifically, the attenuation circuit 1300c may include an adder 1340c and a first high-frequency modulator 1350. [ The adder 1340c may generate a third carrier signal (CRSC) by summing the first carrier signal (CRSI1) and the second carrier signal (CRSQ1). The first high frequency modulator 1350 may generate an output modulated signal OMS2 based on the fourth bit control signal BC4 and the third carrier signal CRSC. In the first high-frequency modulator 1350, the fourth bit control signal BC4 and the third carrier signal CRSC may correspond to the data signal DS and the carrier signal CRS of FIG. 1, respectively.

11, the I / Q network circuit 1200a can determine the sign of the first carrier signal CRSI1 and the sign of the second carrier signal CRSQ1 based on the first bit control signal BC1 . The first carrier signal CRSI1 and the second carrier signal CRSQ1 of FIG. 11 may be substantially the same as the first carrier signal CRSI1 and the second carrier signal CRSQ1, respectively, in FIG.

The third carrier signal CRSC generated in the adder 1340c is supplied to the first to fourth vectors CA1 and CA2 in accordance with the sign of the first carrier signal CRSI1 and the sign of the second carrier signal CRSQ1, CB1, CC1, CD1).

The first high frequency modulator 1350 may generate the output modulated signal OMS2 by adjusting the size of the third carrier signal CRSC based on the fourth bit control signal BC4. The output modulated signal OMS2 may correspond to one of the first through eighth vectors (CA1, CB1, CC1, CD1, CA2, CB2, CC2, CD2 in FIG. 12).

In one embodiment, each of the first to eighth constellation points PA to PH may correspond to three bits of data 000, 001, 010, 011, 100, 101, 110, and 111. At this time, the upper two bits may correspond to the first bit control signal BC1, and the least significant bit may correspond to the fourth bit control signal BC4. For example, when the most significant bits are 00, 01, 10, and 11, the third carrier signal CRSC is set to correspond to one of the first through fourth vectors (CA1, CB1, CC1, and CD1 in FIG. 12) And the magnitude of the vector may be a first magnitude (e.g., CA1) or a second magnitude (e.g., CA2) when the least significant bit is zero or one.

13 is a block diagram illustrating a high frequency transmitter according to embodiments of the present invention.

12 and 13, the high frequency transmitter 1000d includes a control circuit 1100c, an I / Q network circuit 1200b, and an attenuation circuit 1300d, and may further include an antenna 1400. [

The control circuit 1100c and the antenna 1400 in Fig. 13 may be substantially the same as the control circuit 1100c and the antenna 1400, respectively, in Fig. The I / Q network circuit 1200b in FIG. 13 may be substantially the same as the I / Q network circuit 1200b in FIG.

The attenuation circuit 1300d outputs an output modulated signal corresponding to the data to be transmitted based on the bit control signals (for example, BC1 and BC4), the first carrier signal CRSI2 and the second carrier signal CRSQ2 OMS2). The attenuation circuit 1300d may include an adder 1340d and a first high frequency modulator 1350. [ The adder 1340c may generate the third carrier signal CRSC by summing the first carrier signal CRSI2 and the second carrier signal CRSQ2 based on the first bit control signal BC1. The first high frequency modulator 1350 may generate an output modulated signal OMS2 based on the fourth bit control signal BC4 and the third carrier signal CRSC.

13, the first carrier signal CRSI2 and the second carrier signal CRSQ2 may be substantially the same as the first carrier signal CRSI2 and the second carrier signal CRSQ2, respectively, in FIG.

13, the adder 1340d can determine the sign of the first carrier signal CRSI2 and the sign of the second carrier signal CRSQ2 based on the first bit control signal BC1. For example, based on the first bit control signal BC1, the sign of the first carrier signal CRSI2 may be determined to be positive or negative, and the sign of the second carrier signal CRSQ2 may be determined to be positive or negative. have. The adder 1340d may generate a third carrier signal (CRSC) by summing the first carrier signal (CRSI2) and the second carrier signal (CRSQ2) based on the determined code. The third carrier signal (CRSC) in FIG. 13 may be substantially the same as the third carrier signal (CRSC) in FIG. The operation of the first high-frequency modulator 1350 of FIG. 13 may be substantially the same as the operation of the first high-frequency modulator 1350 of FIG.

In one embodiment, the high frequency transmitters 1000a, 1000b, 1000c, and 1000d according to embodiments of the present invention may be referred to as phase shifters.

Hereinabove, the examples of the high frequency transmitter including the high frequency modulator 100 according to the embodiments of the present invention have been described based on the 16-QAM and 8-QAM systems. However, the high frequency transmitter according to the embodiments of the present invention includes arbitrary The data to be transmitted can be modulated based on the QAM scheme. For example, as described above with reference to FIG. 5, when a high-frequency modulator performs a modulating operation based on a data signal having three or more levels, the high-frequency transmitter is relatively complex, such as 64-QAM, 256- May be implemented to operate based on the QAM scheme.

The signal modulation method according to embodiments of the present invention may be implemented in the form of a product or the like including computer-readable program code stored in a computer-readable medium. The computer readable program code may be provided to the processor of the various computers or other data processing apparatus via a reading device. The computer-readable medium may be a computer-readable signal medium or a computer-readable recording medium. The computer-readable recording medium may be any type of medium that can store or contain programs in or on the instruction execution system, equipment or apparatus.

The high-frequency modulator, the high-frequency transmitter, and the signal modulation method according to embodiments of the present invention can be applied to a mobile phone, a smart phone, a tablet PC, a laptop computer, Such as a personal digital assistant (PDA), a portable multimedia player (PMP), a digital camera, a music player, a portable game console, a navigation system, The present invention may be applied to any mobile device or any computing device such as a personal computer (PC), a server computer, a workstation, a digital television, a set-top box, System. The mobile device may further include a wearable device, an Internet of Things (IoT) device, an Internet of Everything (IoE) device, an e-book, and the like.

The present invention can be applied to various communication apparatuses and communication systems. Therefore, the present invention can be applied to a mobile phone, a smart phone, a PDA, a PMP, a digital camera, a camcorder, a PC, a server computer, a workstation, a notebook, a digital TV, a set- And the like can be usefully used in various electronic devices.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the present invention as defined by the following claims. It will be understood.

Claims (20)

A resonator including a first terminal for receiving a carrier signal and a second terminal for outputting a modulation signal;
A first varactor including a first end directly connected to the first terminal of the resonator and a second end directly connected to the first node;
A second varactor including a first end directly connected to the second terminal of the resonator and a second end directly connected to the first node; And
And a data supply unit for receiving the data signal,
The resonance frequency is changed based on the data signal applied to the first and second varactors through the data supply unit and the first node, and the amplitude modulation of the carrier signal is performed based on the change in the resonance frequency, Frequency modulator. The method according to claim 1,
The capacitance of the first and second varactors increases and the resonant frequency decreases when the data signal has a low level,
Wherein when the data signal has a high level, the capacitance of the first and second varactors decreases and the resonance frequency increases. 3. The method of claim 2,
And when the data signal has the low level, the amplitude of the modulation signal has a first amplitude,
Wherein when the data signal has the high level, the amplitude of the modulation signal has a second amplitude larger than the first amplitude. The method according to claim 1,
Wherein an impedance matching is performed based on a length of the transmission line constituting the resonator and a size of the first and second varactors. 5. The method of claim 4,
A first load coupled between the first terminal and a ground voltage; And
And a second load connected between the second terminal and the ground voltage,
The length of the transmission line and the magnitude of the first and second varactors are set so that the impedance of the resonator, the first and second varactors and the second load at the first terminal is the same as the impedance of the first load, To-noise ratio. 5. The method of claim 4,
A first load coupled between the first terminal and a ground voltage; And
And a second load connected between the second terminal and the ground voltage,
The impedance of the resonator, the first and second varactors and the first load at the second terminal is equal to the impedance of the second load, and the length of the transmission line and the magnitude of the first and second varactors To-noise ratio. The method according to claim 1,
Wherein the resonant frequency is determined based on a length of a transmission line constituting the resonator and a capacitance of the first and second varactors. 8. The method of claim 7,
Wherein a length of the transmission line is equal to a wavelength of the carrier signal. The method according to claim 1,
And the transmission line constituting the resonator is formed to have an Omega (?) Shape. The method according to claim 1,
And a shielding pattern formed to surround at least a part of the resonator. The method according to claim 1,
Wherein the data supply unit includes a first terminal for receiving the data signal and a second terminal connected to the first node. The data processing apparatus according to claim 11,
A first resistor coupled between a first terminal of the data supply and a ground voltage; And
And first and second inverters connected in series between a first terminal of the data supply unit and a second terminal of the data supply unit. A first varactor including a resonator, a first end directly connected to the first terminal of the resonator and a second end directly connected to the first node, a first terminal directly connected to the second terminal of the resonator, 1. A signal modulation method using a high-frequency modulator including a second varactor including a second stage directly connected to one node, and a data supply unit for receiving a data signal,
Generating a modulated signal output from a second terminal of the resonator based on a carrier signal received at a first terminal of the resonator; And
Modulates the carrier signal based on a change in the resonance frequency, changes the resonance frequency based on the data signal applied to the first and second varactors through the data supply unit and the first node, And controlling the signal. 14. The method of claim 13, wherein controlling the modulated signal comprises:
Increasing the capacitance of the first and second varactors and decreasing the resonant frequency to set the amplitude of the modulated signal to a first amplitude when the data signal has a low level; And
Setting the amplitude of the modulated signal to a second amplitude greater than the first amplitude when the capacitance of the first and second varactors decreases and the resonant frequency increases when the data signal has a high level, Wherein the signal modulation method comprises the steps of: A control circuit for generating a bit control signal indicating data to be transmitted;
An I / Q network circuit for generating a first carrier signal of an in-phase component and a second carrier signal of a quadrature component based on an input signal; And
And an attenuation circuit that generates an output modulated signal corresponding to the data to be transmitted based on the bit control signal, the first carrier signal, and the second carrier signal, and includes at least one high frequency modulator,
Wherein each of the at least one high-
A resonator including a first terminal for receiving a carrier signal and a second terminal for outputting a modulation signal;
A first varactor connected between a first terminal of the resonator and a first node; And
And a second varactor connected between the second terminal of the resonator and the first node,
Wherein the resonance frequency is changed based on the bit control signal applied to the first and second varactors, and the modulation signal is controlled based on a change in the resonance frequency. 16. The apparatus of claim 15,
A first high frequency modulator for generating a first modulated signal based on the bit control signal and the first carrier signal;
A second high frequency modulator for generating a second modulated signal based on the bit control signal and the second carrier signal; And
And an adder for adding the first modulated signal and the second modulated signal to generate the output modulated signal. 17. The method of claim 16,
Wherein the I / Q network circuit determines the sign of the first carrier signal and the second carrier signal based on the bit control signal. 17. The method of claim 16,
And the adder determines the sign of the first modulated signal and the second modulated signal based on the bit control signal. 16. The apparatus of claim 15,
An adder for adding the first carrier signal and the second carrier signal to generate a third carrier signal; And
And a first high frequency modulator for generating the output modulated signal based on the bit control signal and the third carrier signal. 16. The method of claim 15,
And modulates the data to be transmitted based on a quadrature amplitude modulation (QAM) scheme.

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