KR101802504B1 - Method of manufacturing resistive film for bolometer and method of manufacturing bolometer - Google Patents

Abstract

The method for manufacturing a resistive thin film for a bolometer according to the present invention includes the steps of preparing a mixed solution by mixing an organic metal compound precursor solution containing at least one metal selected from the group consisting of nickel, manganese, and copper into an organic solvent; Forming an organic metal compound layer on the substrate by a liquid phase process using the mixed solution; Subjecting the organic metal compound layer to plasma treatment; And a step of performing plasma treatment and subsequent heat treatment of the organic metal compound layer in an oxidizing atmosphere to change into an oxide resistive thin film. According to the method for manufacturing a resistive thin film for a bolometer according to the present invention, a resistive thin film for a bolometer and a thermistor bolometer having a low resistivity and a high temperature coefficient can be realized.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method of manufacturing a resistive thin film for a bolometer,

The present invention relates to a method of manufacturing a resistive thin film for a bolometer and a method of manufacturing the same. More particularly, the present invention relates to a method of manufacturing a resistive thin film for a bolometer and a method of manufacturing the same that can uniformize the microstructure of the thin film and form a thin film at a low temperature. will be.

Bolometer is an infrared detector that detects the change of infrared rays by using the change of the electric resistance of the sensor due to temperature rise due to the absorption of infrared rays. The infrared detector has photon-type and thermaltype. In the case of photon type, the performance is excellent, but liquid nitrogen cooler is required, which is a costly production cost. Therefore, there is no need for a cooler, Is commonly used, and the bolometer is a type of thermal infrared detector.

Since the thermal type has a disadvantage that it is less sensitive to infrared than the photon type, the performance of the bolometer is required to be improved. As a method of improving the performance of the bolometer, there is a method of changing the structure and a method of improving the characteristics of the bolometer material.

In the method of improving performance through material properties, the thermal resistance material used in the bolometer must have a high temperature coefficient of resistance (TCR), low resistivity, and low 1 / f noise , Compatibility with IC process, simplification of manufacturing process, reduction of manufacturing cost, stable electric characteristics and high reproducibility.

In recent years, vanadium oxide (VOx), which is a type of amorphous silicon (a-Si) or a metal oxide film, has been mainly used as a material for the bolometer used at present, and YBaCuO, GeSiO, Poly-Si-Ge, BiLaSrMnO, and NiO are being developed.

Although the metal thin film has an advantage that the resistance at room temperature is very low, there is a problem that the TCR value is very small to improve the responsivity of the device. The amorphous silicon (a-Si) has a high TCR value, (PECVD) method which is commonly used in the process of the present invention, it is possible to easily deposit a thin film having stable characteristics, but it has a relatively high specific resistance and 1 / f noise , It is disadvantageous in that it is necessary to design a structure that can keep the thermal conductivity low to maintain the constant water temperature because the thickness is very thin and the heat capacity is low when used as a resistance thin film for a bolometer.

In addition, vanadium oxide (VOx), which is the most widely used substance, has a low specific resistance with a high TCR value of about -2% / K, but there are numerous intermediate substances such as VO2, V2O3 and V2O5, And it is difficult to obtain reproducibility because it undergoes a state change from an insulator or a semiconductor to a metal state. In order to deposit a stable film, a special equipment such as an ion beam sputtering device and a high- It has problems to be solved.

Thus, attempts have been made to form a thin film at a low temperature using a general metal organic decomposition method. However, in order to minimize the thermal conduction from the surrounding environment to the resistance thin film for the bolometer when forming the bolometer, the resistance thin film is separated from the substrate by the spacing space and separated therefrom so as to reduce the organic material sacrifice such as polyimide Layer can be formed. In the case of the thin film deposited by the decomposition method of metal organic compound, the optimum subsequent annealing temperature was maintained at 450 ° C or more for 15 hours.

When a thin film formed by a general metal organic decomposition method is applied to a resistive thin film for a real bolometer, bubbling problems may occur in the organic sacrificial layer described above, and the microstructure of the thin film may become uneven and the electrical characteristics of the thin film may deteriorate.

In the case of a CMOS (Complementary Metal Oxide Semiconductor) readout circuit, since the process of depositing the temperature sensing material of the bolometer is limited to less than 450 ° C. because it can be damaged by heat treatment at a high temperature of 450 ° C. or more, There is a problem that the selection of the sensing material may be limited.

US 6489613 B

The present invention provides a method for manufacturing a resistive thin film for a bolometer and a method for manufacturing a bolometer, which can uniformize the microstructure of the thin film and manufacture the thin film at a low heat treatment temperature.

The method for manufacturing a resistive thin film for a bolometer according to an embodiment of the present invention includes: preparing a mixed solution by mixing an organic metal compound precursor solution containing at least one metal selected from the group consisting of nickel, manganese, and copper into an organic solvent; Forming an organic metal compound layer on the substrate by a liquid phase process using the mixed solution; Subjecting the organic metal compound layer to plasma treatment; And a step of subjecting the plasma-treated organic metal compound layer to subsequent heat treatment in an oxidizing atmosphere to change into an oxide resistance thin film.

The oxide-resistant thin film may be formed by a metal organic decomposition method.

The method may further include pre-heat treating the organic metal compound layer before the plasma treatment step.

The subsequent heat treatment may be performed at a temperature ranging from 330 ° C to 430 ° C.

The oxide resistive thin film is made of a spinel crystal phase and may have a composition of (Ni, Mn, Cu) ₃ O ₄ .

The grain size of the oxide-resistant thin film may be 10 nm to 70 nm.

The thickness of the oxide-resistant thin film may be 30 nm or more and 100 nm or less.

The oxide resistant film may have a ^{3 +} Mn / Mn ^{+ 4} ratio of 0.1 to 14.3.

The oxide-resistant thin film may have a composition of a compound represented by the following formula (1). (Ni, Mn) _1-x Cu _x ] ₃ O ₄ , and x is 0.20? X? 0.30.

The oxide-resistant thin film may have a composition of a compound represented by the following formula (2). [Formula 2] [(Ni _y Mn _1-y ) Cu] ₃ O ₄ , and y is 0.1? Y? 0.4.

The resistance temperature coefficient of the oxide resistive thin film may be -1.3% / K to -2.3% / K.

The oxide resistive thin film may have a resistivity value of 100? Cm or less at room temperature.

According to another aspect of the present invention, there is provided a method of manufacturing a bolometer, including: providing a substrate on which a signal processing circuit is formed; Forming a plurality of metal pads spaced apart from the upper surface of the substrate to transmit an electric signal of the signal processing circuit; Forming an organic sacrificial layer on the substrate; Forming a resistive thin film for a bolometer on the organic sacrificial layer by the manufacturing method; And patterning the organic sacrificial layer and the resistive thin film.

Forming a support column having one side connected to the metal pad and the other side connected to the resistance thin film.

And removing the organic sacrificial layer.

According to an embodiment of the present invention, crystal nuclei can be formed in the organic metal compound layer by plasma-treating the organic metal compound layer to induce crystal growth, and the oxide metal thin film is formed by subsequent heat treatment of the organic metal compound layer, The resistance thin film for the bolometer can be stably formed at a low heat treatment temperature at which the processing circuit is not damaged. Accordingly, the oxide thin film having a spinel structure can form a resistor for a bolometer having a high resistance temperature coefficient and a low resistivity.

In addition, if crystal growth is induced by plasma treatment, the microstructure of the oxide-resistant thin film becomes uniform, and the crystal structure of the thin film can be improved.

In addition, since the resistance thin film for a bolometer has a spinel structure, it is possible to manufacture a bolometer having an excellent precision and an improved temperature stability, and when applied to a resist thin film for an actual bolometer, a polyimide bubbling May not occur.

1 is a flow chart showing a method of manufacturing a resistive thin film for a bolometer according to an embodiment of the present invention.
2 is a cross-sectional view showing a structure of a spin coater according to an embodiment of the present invention;
FIG. 3 is a photograph comparing the microstructure of the thin film according to the embodiment of the present invention and the thin film of the comparative example.
FIG. 4 is a graph showing resistivity values of a thin film according to an embodiment of the present invention. FIG.
5 is a graph showing the percentage ^{+ 3 +} Mn / Mn thin film ⁴ in accordance with an embodiment of the invention.
FIG. 7 is a graph showing TCR values according to temperature of a thin film according to an embodiment of the present invention. FIG.
7 is a sectional view showing a manufacturing process of a bolometer according to an embodiment of the present invention;

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It will be apparent to those skilled in the art that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know. To illustrate the invention in detail, the drawings may be exaggerated and the same reference numbers refer to the same elements in the figures.

FIG. 1 is a flowchart showing a method of manufacturing a resistive thin film for a bolometer according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view showing the structure of a spin coater according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, a method for manufacturing a resistive thin film 240 for a bolometer according to an embodiment of the present invention includes mixing an organic metal compound precursor solution containing at least one of nickel, manganese, and copper into an organic solvent Thereby preparing a mixed solution 130; Forming an organic metal compound layer (120) on the substrate (110) by a liquid phase process using the mixed solution (130); Plasma processing the organic metal compound layer 120; And a step of subjecting the plasma-treated organometallic compound layer 120 to subsequent heat treatment in an oxidizing atmosphere to change into an oxide-resistant thin film 240.

Further, before the plasma treatment step, the organic metal compound layer 120 may further be subjected to preliminary heat treatment.

First, a mixed solution 130 may be prepared by mixing an organic solvent with a precursor solution containing an organometallic compound including at least one of nickel, manganese, and copper. The organometallic compound may include at least one of a nickel oxide organic compound, a manganese oxide organic compound, and a copper oxide organic compound.

In order to prepare a Ni-Mn-Cu MOD (Metal Organic Decomposition) solution, that is, a mixed solution 130, an organic solvent, such as butyl acetate (ethyl acetate), is added to a precursor solution of a nickel oxide organic compound, a manganese oxide organic compound, ) May be added to prepare the mixed solution 130. The mixed solution 130 may be prepared by stirring the prepared solution for 10 hours or more.

The use of butyl acetate can improve the bonding property with the substrate 110, and when the organic solvent such as butyl acetate is not used, the resistance thin film 240 may not be produced.

Further, the mixing ratio of the nickel oxide organic compound, the manganese oxide organic compound and the copper oxide organic compound can change the composition ratios of the nickel oxide organic compound, the manganese oxide organic compound and the copper oxide organic compound, respectively, according to the desired composition.

Then, the organic metal compound layer 120 can be formed on the substrate using the spin coater as shown in FIG. 2 using the mixed solution 130. The organic metal compound layer 120 may be changed to an oxide resistance thin film 240 by a subsequent heat treatment to be described later and the oxide resistance thin film 240 may be formed by metal organic decomposition (MOD).

The substrate 110 is placed on the support unit 140 and the mixed solution 130 is injected onto the substrate 110 using the nozzle 150. [ 0.5 ml of the mixed solution 130 may be dispensed to uniformly apply the mixed solution 130 to the substrate 110 and the supporting unit 140 may be rotated while applying the mixed solution 130, .

Thus, the mixed solution 130 may be uniformly spread on the substrate 110 and coated on the substrate 110 so as to have a stable thickness.

The organic metal compound layer 120 is formed by the decomposition method of the metal organic compound, but the present invention is not limited thereto and various liquid process methods can be selected.

The metal organic compound decomposition method is a wet chemical thin film production method using a mixed solution 130 in which an organic metal compound precursor solution is dissolved in an organic solvent, and a desired stoichiometric ratio can be maintained. Since a vacuum apparatus is not required, It is possible to rapidly produce a thin film on the substrate 110. However, when the thin film is deposited at a temperature of 450 ° C or higher for crystallizing the thin film, the thin film can be damaged by the decomposition of the metal organic compound without the plasma treatment, and the CMOS read circuit and the resistance thin film (240 ) May be deformed due to a mismatch in thermal expansion coefficient.

After the organic metal compound layer 120 is formed, the organic metal compound layer 120 can be pre-annealed before the plasma treatment, which will be described later.

Since the solvent or organic residues contained in the organic metal compound layer 120 formed by coating the mixed solution 130 may deteriorate the quality of the thin film, the organic solvent may be removed at a temperature of 330 < 0 > C to remove the solvent or organic residues in the organic metal compound layer 120. [ A preliminary heat treatment can be performed at a temperature range of 430 캜 and a holding time faster than the subsequent heat treatment holding time.

The preliminary heat treatment can be slowly performed at a temperature raising rate lower than, for example, a temperature raising rate of 10 캜 / min, in order to minimize pores on the surface of the organic metal compound layer 120. Since the pores on the surface of the organic metal compound layer 120 are minimized and the solvent or organic residues in the organic metal compound layer 120 are removed by subsequent heating, the subsequent heat treatment is performed at a rate of 10 ° C / min or a rate of 10 ° C / It can be heated at a faster heating rate.

After the preliminary heat treatment of the organic metal compound layer 120, the organic metal compound layer 120 may be subjected to a plasma treatment.

Plasma treatment is a process in which gases such as Ar, H₂, and O₂ are injected into a vacuum chamber, depending on the material of the surface, or when they are injected with electrical energy, the gases injected by the collision of accelerated electrons are activated in a plasma state. Ions or radicals of gas generated in the surface of the target material collide with the surface of the material to be treated to induce a physicochemical change of the surface.

The plasma treatment according to the present invention can perform at least one of plasma treatment, argon plasma treatment, hydrogen plasma treatment, and oxygen plasma treatment.

When the organometallic compound layer 120 is placed in a plasma region and the organometallic compound layer 120 is subjected to plasma treatment, any one of argon, hydrogen, and oxygen gas ions generated in the activated plasma state is introduced into the organic metal compound layer 120, The organic metal compound layer 120 collides with the surface of the compound layer 120 and supplies energy required for nucleation for crystal growth from any one of argon, hydrogen, and oxygen gas ions colliding with the surface of the organic metal compound layer 120 A nucleus for crystal growth may be formed at the interface between the substrate 110 and the organic metal compound layer 120 or on the surface of the organic metal compound layer 120 or inside the organic metal compound layer 120. Therefore, the nuclei formed in the organic metal compound layer 120 can act as nuclei for crystal growth, inducing grain growth, and inducing crystal growth, so that the oxide-resistant thin film 240 can be formed at a low temperature .

That is, the crystal growth can be induced by forming the crystal nuclei of the organic metal compound layer 120 by the plasma treatment, so that the crystal growth of the resistance thin film 240 by the subsequent heat treatment can be facilitated, Can be performed.

When the resistive thin film 240 is deposited by the decomposition method of the metal organic compound without the plasma treatment, the CMOS readout circuit may be damaged because the heat treatment temperature for crystallizing the resistive thin film 240 is as high as 450 ° C or more, The deformation due to the thermal expansion coefficient discrepancy between the thin films 240 may occur. Therefore, crystal growth can be facilitated by subsequent heat treatment by plasma-treating the organometallic compound layer 120 to form crystal nuclei, so that the annealing can be performed at a low temperature. Thus, even if the resistance thin film 240 is formed at a low temperature, It has a fine structure and can have an excellent crystal structure.

The organic metal compound layer 120 may be subjected to a plasma treatment and the organic metal compound layer 120 may be annealed in an oxidizing atmosphere to convert the organic metal compound layer 120 into the oxide thin film 240. [ The subsequent heat treatment may be performed at a temperature ranging from 330 ° C to 430 ° C.

The organic metal compound layer 120 is changed into the oxide thin film 240 and the organic metal compound layer 120 is formed in order to improve the densification and crystallization or the maximum resistance temperature coefficient, the low specific resistance, the low 1 / f noise, 120 may be subjected to a subsequent heat treatment.

The organic metal compound layer 120 may be changed to an oxide resistance thin film 240 in an oxidizing atmosphere and a subsequent heat treatment for crystal growth may be performed by growing crystal nuclei of the organic metal compound layer 120 formed through plasma treatment to form crystal grains , The crystal grains 240 can be crystallized by growing and coagulating the formed crystal grains.

The crystallization of the resistive thin film 240 may be performed in the order of nucleation, initial crystallization, grain growth, and crystallization. The organic metal compound layer 120 is subjected to plasma treatment, Since the crystal nucleus formed at the interface between the first conductive layer 120 and the second conductive layer 120 can facilitate initial crystallization and crystal growth through subsequent heat treatment, the resistance thin film 240 can be easily grown and can be grown at a low temperature, for example, A subsequent heat treatment can be performed.

Since the volume of the resistive film 240 is constant during the crystallization process of the resistive thin film 240 through the subsequent heat treatment, the other crystal grains are extinguished to form one large crystal grains as the crystal growth progresses, and the number of crystal grains can be reduced.

In the case of the thin film deposited only by general metalorganic decomposition method without plasma treatment, the optimum subsequent heat treatment temperature showed a holding time of 15 hours at 450 ° C. or more. That is, conventionally, when a thin film formed by a general metal organic decomposition method without a plasma treatment is applied to a resistive thin film 240 for an actual bolometer, the polyimide bubble 240, which is a sacrificial layer, Ring problems can occur. Further, a subsequent annealing temperature lower than 450 占 폚 is required because the CMOS (Complementary Metal Oxide Semiconductor) readout circuit may be damaged and deformation due to the thermal expansion coefficient mismatch between the CMOS readout circuit and the resistive thin film 240 may occur.

Therefore, crystal growth can be induced by forming crystal nuclei of the organic metal compound layer 120 by the plasma treatment, so that crystal growth of the resistance thin film 240 by the subsequent heat treatment can be facilitated, ) Can be subjected to a subsequent heat treatment in a temperature range of 330 ° C to 430 ° C, which is lower than the conventional heat treatment temperature of 450 ° C.

If the subsequent heat treatment is performed at a temperature lower than 330 캜, the temperature of the organic metal compound layer 120 may not be changed into the oxide resistant film 240 because the temperature is not sufficiently high, and if the heat treatment is performed at a temperature exceeding 430 캜, Is too high, the CMOS (Complementary Metal Oxide Semiconductor) readout circuit may be damaged.

Therefore, in the case of the method for manufacturing the resistance thin film 240 for a bolometer according to the present invention, the subsequent heat treatment at 330 ° C to 430 ° C is lower than the temperature at which the subsequent heat treatment is performed at a temperature higher than 450 ° C in the prior art, The problem of damaging the signal processing circuit formed on the lower semiconductor substrate 110 can be prevented. Therefore, the resistance thin film 240 for a bolometer can be easily used. In addition, the fine structure of the surface of the oxide-resistant thin film 240 is uniform, and the crystallinity, surface resistance, and TCR of the thin film 240 can be improved.

The oxide-resistant thin film 240 is made of a spinel crystal phase and may have a composition of (Ni, Mn, Cu) ₃ O ₄ .

Generally, the electron conduction of a material having a spinel structure (AB ₂ O ₄ ) is generated by the movement of charge placed at the octahedral position within the spinel structure. In other words, electrical characteristics are influenced by the electronic hopping mechanism due to the difference in the electrons of the positive ions positioned at the center of the oxygen octahedron of the B-site, so that the placement of the positive ions of different electrons at the octahedral site improves the electrical conductivity Do.

(Ni, Mn, Cu) ₃ O ₄ , the Mn ³⁺ of the B-site is divided into Mn ^{2 +} and Mn ^{4 +} as the Ni ^{2 +} of the A-site, which is an oxygen tetrahedron, moves to the B- , Mn ^{2 +} moves to A-site, and conductivity is generated by electron hopping of Mn ^{3 +} and Mn ^{4 + which} are central octahedron of oxygen. The B-site oxygen octahedron is connected to the edge, and the distance of the ions located at the center of the octahedron is closest, so the probability of electron hopping of Mn ³⁺ and Mn ⁴⁺ is large.

When Cu is added to (Ni, Mn, Cu) ₃ O ₄ having such a spinel structure, Cu ^{2 +} is introduced into B-site, and Mn ²⁺ of A-site and Mn ⁴⁺ of B- -site to Mn ³⁺ and can have a composition of (Ni, Mn, Cu) ₃ O ₄ .

That is, the electrical properties of the spinel structure are explained by electron hopping of B-site. When copper ions are added to the spinel structure of (Ni, Mn, Cu) ₃ O ₄ , ^{2 +} ions, and the remaining ions migrate to the B-site to form Mn ^{4 +} , which increases the hopping electrons between Mn ^{3 +} and Mn ^{4 +} . As a result, the resistivity of the thin film can be reduced.

FIG. 3 is a photograph of a microstructure of a thin film according to an embodiment of the present invention and a thin film according to a comparative example.

FIG. 3 (a) is a microstructure of the resistive thin film 240 deposited by the decomposition method of metal organic compound without the plasma treatment according to the comparative example. FIG. 3 (b) Is a microstructure of a resistive thin film 240. FIG. 3 (c) is a microstructure of the resistive thin film 240 deposited by the hydrogen plasma treatment and the metal organic compound decomposition method according to the embodiment. FIG. 3 (d) And the microstructure of the resistive thin film 240 deposited.

Referring to FIG. 3, in the case of the resistance thin film 240 deposited by the decomposition method of the metal organic compound without the plasma treatment, grain growth is remarkably more enhanced than the resistance thin film 240 in which the growth of the crystal grains is performed by the argon plasma treatment, the hydrogen plasma treatment, .

In addition, it can be seen that the resistive film 240 subjected to the oxygen plasma treatment has more crystal grain growth than that of the resistive thin film 240 subjected to the argon plasma treatment and the hydrogen plasma treatment, and the oxygen plasma treatment, the hydrogen plasma treatment, The crystal growth of the resistive thin film 240 that has been plasma-treated with the plasma treatment effectively occurred.

Therefore, since the crystal growth of the resistance thin film 240 subjected to the oxygen plasma treatment is more effective than the resistance thin film 240 treated with the hydrogen plasma or the resistance thin film 240 treated with the hydrogen plasma, the oxygen plasma treatment is performed on the resistance thin film 240 ) Or a resistive thin film 240 subjected to a hydrogen plasma treatment.

The resistive thin film 240 subjected to the plasma treatment forms crystal nuclei of the organic metal compound layer 120 by plasma treatment rather than the resistive thin film 240 deposited by the decomposition method of the metal organic compound without the plasma treatment to improve the crystal growth of the resistive thin film 240 And the crystal growth of the resistive thin film 240 by the subsequent heat treatment can be facilitated, so that the subsequent heat treatment can be performed at a low temperature. Therefore, the lower semiconductor substrate 110 It is possible to fundamentally block the damage of the signal processing circuit formed in the signal processing circuit.

4 is a graph showing resistivity values of a thin film according to an embodiment of the present invention.

Referring to Figure 4, The resistivity of the oxide-resistive thin film 240 subjected to the oxygen plasma treatment according to the embodiment (for example, the subsequent heat treatment temperature of 400 占 폚 and the holding time of 15 hours) according to the embodiment is the same as that of the oxide- Which is relatively lower than the resistivity (240) (for example, the subsequent heat treatment temperature of 400 ° C and the holding time of 15 hours).

Since the resistivity value is influenced by the microstructure (grain size) of the resistive thin film 240, the resistive thin film 240 subjected to the oxygen plasma treatment grows more grains than the resistive thin film 240 subjected to the hydrogen plasma treatment, The resistance thin film 240 subjected to the oxygen plasma treatment than the resistance thin film 240 can have a lower specific resistance value.

In addition, the grain size of the oxide-resistant thin film 240 may be 10 nm to 70 nm.

Since the resistivity value of the resistive film 240 is influenced by the grain size, when the grain size is less than 10 nm, the resistive film 240 has a low resistivity value, which may affect the electrical conduction of the resistive film 240 If the size of the crystal grains exceeds 70 nm, the roughness of the surface of the resistive thin film 240 increases and a uniform microstructure can not be obtained. Accordingly, the size of the crystal grains may be 10 nm to 70 nm.

The thickness of the oxide-resistant thin film 240 subjected to the plasma treatment may be 30 nm or more and 100 nm or less.

In the process of forming the organic metal compound layer 120, the thickness of the organic metal compound layer 120 can be controlled by controlling the duration of the mixed solution 130. The thickness of the organic metal compound layer 120 becomes thicker as the mixing time of the mixed solution 130 is increased and the thickness of the organic metal compound layer 120 may be decreased as the mixing solution 130 is administered for a shorter time.

When the organic metal compound layer 120 having a thickness of 30 nm or less is manufactured, desired electrical characteristics can not be obtained. When the organic metal compound layer 120 having a thickness of 100 nm or more is formed, an organic metal compound layer 120 having a uniform thickness is formed And the organic metal compound in the organic metal compound layer 120 may be difficult to decompose in the subsequent heat treatment step of the organic metal compound layer 120, as compared with the surface. It may also affect the electrical conduction of the resistive film 240. Therefore, it is necessary to form the organic metal compound layer 120 to a thickness of 30 nm or more and 100 nm or less.

FIG. 5 is a graph showing Mn ^{3 +} / Mn ^{4 +} ratio of a thin film according to an embodiment of the present invention, and FIG. 6 is a graph showing a TCR value of a thin film according to an embodiment of the present invention.

5 (a) is a graph showing the Mn ^{3 +} / Mn ^{4 +} ratio of the resistive thin film 240 subjected to oxygen plasma treatment according to an embodiment of the present invention, and FIG. 5 (b) And the Mn ^{3 +} / Mn ^{4 +} ratio of the resistive thin film 240 subjected to the plasma treatment.

Referring to FIG. 5, the Mn ^{3 +} / Mn ^{4 +} ratio of the oxygen plasma treated resistive film 240 according to the embodiment (for example, the subsequent heat treatment temperature of 400 ° C. and the holding time of 15 hours) It can be confirmed that the ratio is larger than the Mn ^{3 +} / Mn ^{4 +} ratio of the resistance thin film 240 (for example, the subsequent heat treatment temperature of 400 ° C and the holding time of 15 hours). 6, the TCR values of the oxygen plasma treated oxide thin film 240 (e.g., the subsequent heat treatment temperature of 400 DEG C and the holding time of 15 hours) according to the embodiment are the same as those of the hydrogen plasma Is relatively higher than the TCR value of the oxide-resistant thin film 240 (for example, a subsequent heat treatment temperature of 400 ° C and a holding time of 15 hours).

Since the resistance temperature coefficient TCR depends on the ratio of Mn ^{3 +} / Mn ^{4 + of} the resistance thin film 240, the resistance thin film 240 subjected to the oxygen plasma treatment has a higher crystal grain growth than the resistance thin film 240 subjected to the hydrogen plasma treatment And the resistance thin film 240 subjected to the oxygen plasma treatment than the resistance thin film 240 subjected to the hydrogen plasma treatment can have a higher Mn ^{3 +} / Mn ^{4 +} ratio and a TCR value.

The oxide-treated thin film 240 subjected to the plasma treatment may have a Mn ³⁺ / Mn ⁴⁺ ratio of 0.1 to 14.3.

Generally, the electron conduction of a material having a spinel structure (AB ₂ O ₄ ) is generated by the movement of charge placed at the octahedral position within the spinel structure.

(Ni, Mn, Cu) ₃ O ₄ , the Mn ³⁺ of the B-site is divided into Mn ^{2 +} and Mn ^{4 +} as the Ni ^{2 +} of the A-site, which is an oxygen tetrahedron, moves to the B- , Mn ^{2 +} moves to A-site, and conductivity is generated by electron hopping of Mn ^{3 +} and Mn ^{4 + which} are central octahedron of oxygen. The B-site oxygen octahedron is connected to the edge, and the distance of the ions located at the center of the octahedron is closest, so the probability of electron hopping of Mn ³⁺ and Mn ⁴⁺ is large.

When Cu is added to (Ni, Mn, Cu) ₃ O ₄ having such a spinel structure, Cu ^{2 +} is incorporated into B-site, and Mn ^{2 +} of A-site and Mn ^{4 +} of B- It is changed to Mn ^{+ 3} in -site, as this way control the Cu content can be controlled to Mn ³⁺ / Mn ⁴⁺ ratio.

That is, the electrical properties of the spinel structure are influenced by electron hopping due to the difference in the cation electrons located at the center of the oxygen octahedron of B-site, so that the copper ion has a spinel structure of (Ni, Mn, Cu) ₃ O ₄ , The copper ions are replaced with Mn ^{2 +} ions in the A-site, and the remaining ions migrate to the B-site to form Mn ^{4 +} , thereby increasing the hopping electrons between Mn ³⁺ and Mn ⁴⁺ . As a result, The resistivity of the thin film can be reduced.

Therefore, when the ratio of Mn ^{3 +} and Mn ^{4 +} ions is close to 1 at the B-site and the ratio of Mn ^{3 +} / Mn ^{4 +} is close to 1, hopping electrons between Mn ³⁺ and Mn ^{4 +} So that the resistivity value and the TCR value can be decreased.

However, since the Mn ^{+ 3} / Mn ratio of ^{4 +} it is present as when less than 0.1 Mn ^{3 +} a few state eliminates the to hopping between Mn ^{+ 3} and Mn ^{+ 4} e is close to an insulator. On the other hand, when the ratio of Mn ^{3 +} / Mn ^{4 +} is larger than 14.3, Mn ^{4 +} becomes relatively smaller than Mn ^{3 +} , so that electrons capable of hopping can be reduced to become insulators.

Thus, the oxide resistant film 240 may have a ^{3 +} Mn / Mn ^{+ 4} ratio of 0.1 to 14.3.

On the other hand, the resistive thin film 240 for a bolometer, which changes its resistance value in accordance with a temperature change due to infrared absorption, has a low resistance value because the noise of the bolometer increases as the resistance increases. The operating temperature of the infrared detector including the bolometer is generally 50 DEG C at room temperature, and the resistivity of the resistive film 240 for the bolometer is required to be as low as 100? Cm or less in this temperature range.

That is, as the infrared detector is miniaturized, a microbolometer is required. In order to achieve this, a resistivity of 100 Ω · cm or less is required. When the resistivity is more than 100 Ω · cm, the characteristics of the microarray LED and LED package And when the resistance temperature coefficient becomes -1.3% / K or less, it is difficult to control on the circuit.

Table 1 shows the resistivity and TCR characteristics of [(Ni, Mn) _1-x Cu _x ] ₃ O ₄ having different Cu composition ratios according to the embodiment of the present invention.

x 0.14 0.16 0.18 0.20 0.22 0.24 0.26 0.28 0.30 0.32 Resistivity (Ω · cm) 125 105 110 55 58 95 53 14 13 12 TCR
(% / K) -2.5 -2.1 -2.1 -2.3 -2.3 -2.3 -2.2 -2.0 -1.9 -1.7

Referring to Table 1, the oxide-resistant thin film 240 may have a composition of a compound represented by Formula 1 below. (Ni, Mn) _1-x Cu _x ] ₃ O ₄ , and x is 0.20? X? 0.30.

The resistance temperature coefficient of the oxide resistance thin film 240 may be -1.3% / K to -2.3% / K, and the oxide resistance thin film 240 may have a specific resistance value of 100Ω · cm or less at room temperature.

[(Ni, Mn) _{1 - x} Cu _x ] ₃ O _{4 of the} oxide resistive thin film 240 The initial mixing ratio and the actual deposition composition may be the same depending on the mixing ratio of the metal organic compound decomposition method, and it is preferable that the composition varies depending on the Cu content x in the composition of [(Ni, Mn) _1-x Cu _x ] ₃ O ₄ , Value and resistance temperature coefficient were confirmed. At this time, Ni may have a compositional content of [(Ni _0.3 Mn _0.7 ) _1-x Cu _x ] ₃ O ₄ by adding _0.3 .

As can be seen from Table 1, when the oxide resistive thin film 240 has a content of 0.20 to 0.30 in the composition of [(Ni, Mn) _{1 - x} Cu _x ] ₃ O ₄ , the oxide resistive thin film 240 exhibits -1.3 It can be confirmed that the resistivity temperature coefficient of% / K to -2.3% / K and the resistivity value of 100 Ω · cm or less are shown.

When Cu is added to (Ni, Mn, Cu) ₃ O ₄ , Cu ^{2 +} is incorporated into the B-site. Therefore, the electrical conduction to such a spinel structure is carried out between Cu ¹⁺ and Cu ²⁺ As shown in FIG.

In addition, when Cu is added to (Ni, Mn, Cu) ₃ O ₄ , the specific resistance changes depending on the content of Cu, and the specific resistance value may depend on the Cu ^{1 +} / Cu ^{2 +} ratio. That is, as the ratio of Cu ^{1 +} and Cu ^{2 +} increases, the electron hopping between Cu ^{1 +} and Cu ^{2 +} occurs more and the electrical conductivity increases, ) _1-x Cu _x ] ₃ O ₄ and Cu has a content of 0.20 to 0.30, it can have a specific resistance value of 100 Ωcm or less.

On the other hand, as Cu is added to (Ni, Mn, Cu) ₃ O ₄ , the resistivity value decreases and the absolute value of the resistance temperature coefficient, which is another main characteristic that the IR sensor has to have, also decreases.

The resistive thin film 240 for a bolometer, which changes its resistance value in accordance with a temperature change due to infrared absorption, has a low resistance value because the noise of the bolometer increases as the resistance thereof increases. When the resistivity value is more than 100? It is difficult to realize characteristics in the fabrication of the microarray LED and LED package, and when the resistance temperature coefficient is less than -1.3% / K, it is difficult to control on the circuit.

The oxide-resistant thin film 240 according to the present invention has a low resistivity value of not more than 100? 占 질 m when Cu has a content of 0.20 to 0.30 in [(Ni, Mn) _{1- x} Cu _x ] ₃ O ₄ , / K to -2.3% / K. ≪ / RTI >

Table 2 shows the resistivity and TCR characteristics of [(Ni _y Mn _1-y ) Cu] ₃ O ₄ having different Ni composition ratios according to the embodiment of the present invention.

y 0 0.1 0.2 0.3 0.4 0.5 Resistivity
(Ω · cm) 20 18 10 58 70 110 TCR
(% / K) -1.0 -1.7 -1.5 -2.2 -2.3 -2.4

Referring to Table 2, the oxide-resistant thin film may have a composition of a compound represented by the following formula (2). [Formula 2] [(Ni _y Mn _1-y ) Cu] ₃ O ₄ , and y is 0.1? Y? 0.4.

The resistance temperature coefficient of the oxide resistance thin film 240 may be -1.3% / K to -2.3% / K, and the oxide resistance thin film 240 may have a specific resistance value of 100Ω · cm or less at room temperature.

[(Ni _y Mn _{1 -y} ) Cu] ₃ O ₄ The composition can be the same as the initial mixing ratio and the actual deposition composition depending on the mixing ratio of the metal organic compound decomposition method. [(Ni _y Mn _{1 -y} ) Cu] ₃ O ₄ The resistivity and the resistance temperature coefficient were confirmed by varying the y content, y, in the composition. At this time, Cu may be added in an amount of 0.22 to have a compositional content of [(Ni _y Mn _1-y ) _0.78 Cu _0.22 ] ₃ O ₄ .

As can be seen from Table 2, when the oxide resistive thin film 240 has a content of Ni of 0.1 to 0.4 in [(Ni _y Mn _{1 -y} ) Cu] ₃ O ₄ , the resistance thin film 240 for the bolometer is -1.3% / K to -2.3% / K and a resistivity value of 100? · Cm or less. When the Ni contents were 0.1 and 0.2, the resistivity values were as low as about 20? · Cm. 0.4, it can be confirmed that the specific resistance value is 50? · Cm or more.

As the oxygen tetrahedron A-site Ni ^{2 +} migrates to the B-site which is the octahedron of oxygen, Mn ^{3 +} of B-site is divided into Mn ^{2 +} and Mn ^{4 +} , Mn ^{2 +} moves to A-site, Conductivity is generated by electron hopping of the central ions Mn ^{3 +} and Mn ^{4 +} .

In this spinel structure, electric conduction is because achieved by hopping (hopping) of the electron between the Mn ^{3 +} and Mn ^{4 +} which is located in the B-site, a Ni ^{2 +} in the oxygen octahedral sites further more Mn ^{4 +} no It is formed a lot may have a lower specific resistance values by electron hopping of Mn ^{+ 3} and Mn ^4+.

Ni content is 0.1 and 0.2 of the thin film was 0.3, 0.4 There films can than Ni ^{2 +} a have more in the oxygen octahedral sites, Ni ^{2 +} is increased when Ni ^{2 +} inside the spinel structure, A-site is Mn ^{2 +} And B-site, and the remaining ions migrate to B-site to form Mn ^{4 +} , which may increase the hopping electrons between Mn ^{3 +} and Mn ^{4 +} . In other words, Ni ^{2 +} present in the B-site of the octahedron induces a change in valence from Mn ^{3 +} to Mn ^{4 +} , and thus the number of electrons capable of hopping increases as Mn ^{4 +} becomes relatively larger than Mn ^{3 +} So that the resistivity of the thin film can be reduced.

The resistive thin film 240 for a bolometer, which changes its resistance value in accordance with a temperature change due to infrared absorption, has a low resistance value because the noise of the bolometer increases as the resistance thereof increases. When the resistivity value is more than 100? It is difficult to realize characteristics in the fabrication of the microarray LED and LED package, and when the resistance temperature coefficient is less than -1.3% / K, it is difficult to control on the circuit.

The oxide-resistant thin film 240 according to the present invention has a low resistivity value of 100 · m or less and a Ni content of -1.3% when [Ni (Mn _y Mn _{1 -y} ) Cu] ₃ O ₄ has a content of 0.1 to 0.4. / K to -2.3% / K. ≪ / RTI >

7 is a cross-sectional view illustrating a manufacturing process of a bolometer according to an embodiment of the present invention.

Referring to FIG. 7, a method of manufacturing a bolometer according to another embodiment of the present invention includes: providing a substrate 210 on which a signal processing circuit is formed; Forming a plurality of metal pads (220) spaced apart from a top surface of the substrate (210) to transmit an electrical signal of the signal processing circuit; Forming an organic sacrificial layer (230) on the substrate (210); Forming a resistive thin film for a bolometer (240) on the organic sacrificial layer (230) according to any one of the methods described above; And patterning the organic sacrificial layer 230 and the resistive thin film 240. [

First, a substrate 210 on which a signal processing circuit (not shown) is formed can be provided. (Fig. 7 (a)) Such a substrate 210 may include a signal processing circuit for detecting infrared rays, a wafer, or a semiconductor material such as silicon, but the material and structure are not particularly limited.

A metal pad 220 electrically connected to the signal processing circuit may be deposited on the substrate 210 on which the signal processing circuit is formed by a physical vapor deposition method such as a sputtering deposition method. The metal pad 220 may be deposited by physical vapor deposition, but not limited thereto, and may be deposited by various deposition methods.

After the metal pad 220 is deposited, a photosensitive liquid is coated on the metal pad 220, exposed, developed, and etched so as to leave the metal pad 220 only on a desired portion by a photolithography process, And a metal pad 220 pattern that is electrically connected to the signal processing circuit can be formed.

The metal pad 220 may be connected to the resistance thin film 240 in contact with the conductive material of the support column 250, which will be described later.

Next, the organic sacrificial layer 230 may be applied to the substrate 210 on which the metal pad 220 is formed by spin coating or the like in order to form the spacing space 260 to be described later. 7 (b)) The organic sacrificial layer 230 may be formed of polyimide which is generally stable at a high temperature.

After forming the organic sacrificial layer 230, the resistive thin film 240 for a bolometer can be formed on the organic sacrificial layer 230 by any one of the methods described above.

The resistance thin film 240 for a bolometer is a resistor for a bolometer in which a resistance is changed by a change in temperature due to absorption of an infrared ray. The resistance thin film 240 is made of a spinel crystal phase and contains nickel, manganese, Mn, Cu) ₃ O _{4, and} the composition of the oxide-resistant thin film 240 may be expressed by the following formula (1) or (2).

(Ni, Mn) _1-x Cu _x ] ₃ O ₄ , and x is 0.20? X? 0.30.

When Cu is added to (Ni, Mn, Cu) ₃ O ₄ , the specific resistance changes depending on the content of Cu, and the specific resistance value may depend on the ratio of Cu ¹⁺ / Cu ²⁺ . That is, as the ratio of Cu ^{1 +} and Cu ^{2 +} increases, the electron hopping between Cu ^{1 +} and Cu ^{2 +} occurs more and the electrical conductivity increases, ) _1-x Cu _x ] ₃ O ₄ and Cu has a content of 0.20 to 0.30, it can have a specific resistance value of 100 Ωcm or less.

[Formula 2] [(Ni _y Mn _1-y ) Cu] ₃ O ₄ , and y is 0.1? Y? 0.4.

As the oxygen tetrahedron A-site Ni ^{2 +} migrates to the B-site which is the octahedron of oxygen, Mn ^{3 +} of B-site is divided into Mn ^{2 +} and Mn ^{4 +} , Mn ^{2 +} moves to A-site, Conductivity is generated by electron hopping of the central ions Mn ^{3 +} and Mn ^{4 +} . In other words, Ni ^{2 +} present in the B-site of the octahedron induces a change in valence from Mn ^{3 +} to Mn ^{4 +} , and thus the number of electrons capable of hopping increases as Mn ^{4 +} becomes relatively larger than Mn ^{3 +} The resistivity value of the thin film is decreased to have a specific resistance value of 100 Ωcm or less when Ni has a content of 0.1 to 0.4 in [(Ni _y Mn _1-y ) Cu] ₃ O ₄ .

The resistive thin film 240 may be prepared by mixing a solution of an organometallic compound precursor including at least one of nickel, manganese, and copper in an organic solvent to prepare a mixed solution 130; Forming an organic metal compound layer (120) on the substrate (110) by a liquid phase process using the mixed solution (130); Plasma processing the organic metal compound layer 120; And the subsequent step of heat-treating the plasma-treated organometal compound layer 120 in an oxidizing atmosphere to change into the oxide-resistant thin film 240.

The organic metal compound layer 120 may be formed on the substrate 110 by a metal organic decomposition (MOD) method and may be changed to an oxide resistive thin film 240 through a subsequent heat treatment.

In the case of the thin film formed by the general metal organic decomposition method without plasma treatment of the organometallic compound layer 120, the optimum subsequent heat treatment temperature showed a holding time of 15 hours at 450 ° C. When the thin film formed by the general metal organic decomposition method is applied to the resistive thin film 240 for the actual bolometer, a polyimide bubbling problem, which is a sacrificial layer, may occur and the signal processing circuit may be damaged. A maintenance time is required.

That is, the organometallic compound layer 120 formed by the decomposition method of the metal organic compound without the plasma treatment has a very high temperature of 450 ° C. or more for the heat treatment of the thin film. Therefore, when the thin film is deposited only by the decomposition method of the metal organic compound, And distortion due to thermal expansion coefficient mismatch between the CMOS readout circuit and the resistive film 240 may occur.

Therefore, crystal growth can be induced by forming crystal nuclei of the organic metal compound layer 120 by the plasma treatment, so that crystal growth of the resistance thin film 240 by the subsequent heat treatment can be facilitated, ) Can be subjected to a subsequent heat treatment in a temperature range of 330 ° C to 430 ° C, which is lower than the conventional heat treatment temperature of 450 ° C.

Since the temperature of the resistive thin film 240 for the bolometer is relatively lower than the temperature for the heat treatment for the bolometer, the problem of damaging the signal processing circuit formed in the lower semiconductor substrate 110 caused by the high temperature process can be fundamentally prevented.

The resistance thin film 240 manufactured by this method has an improved electrical characteristic so that the resistivity at room temperature is 100? Cm or less and the resistance temperature coefficient (TCR) at room temperature is -1.3% / K to -2.3% / K Lt; / RTI > Thus, the infrared detection sensitivity and temperature stability of the bolometer can be improved.

As described above, according to the present invention, the oxide-resistant thin film 240 having a composition of (Ni, Mn, Cu) ₃ O ₄ that seals nickel, manganese, and copper as main components is formed by using a low heat treatment temperature and a simple process And the oxide thin film 240 can have a low resistivity, a high TCR value, and a low noise characteristic compared with vanadium oxide and amorphous silicon which are conventionally used as resistors for a bolometer.

In addition, when the oxide-resistant thin film 240 according to the present invention is used as a resistive thin film for a bolometer, it becomes possible to manufacture a bolometer and an infrared detecting device having excellent infrared ray detecting characteristics.

When the organic sacrificial layer 230 and the resistive thin film 240 are formed on the substrate 210, the photosensitive liquid is applied on the resistive thin film 240 and the organic sacrificial layer 230 and the resistive thin film 240 are formed only by the photolithography process, The organic material sacrificing layer 230 and the resistive thin film are patterned to expose a part of the metal pad 220. [ (Fig. 7 (c)).

The method may further include forming a support column 250 having one side connected to the metal pad 220 and the other side connected to the resistance thin film 240. (Fig. 7 (d)).

The support pillars 250 support the resistive foil 240 by connecting the metal pads 220 and the resistive foil 240 such that the support pillars 250 include at least a pair of May be formed in the shape of a supporting column 250.

The resistance thin film 240 may be in contact with the lower surface of the protruding portion of the support column 250 and may have sufficient mechanical strength to support the resistance thin film 240 while minimizing heat conduction And may be made of a material having thermal conductivity and formed to have a small cross-sectional area. That is, a single or composite metal such as aluminum, titanium, or tungsten may be used for conductivity and mechanical stability.

The supporting column 250 may further include a conductive layer (not shown) electrically connecting the substrate 210 and the resistance thin film 240. The conductive layer of the supporting column 250 may include a resistance thin film 240, And a conductive material for electrically connecting the signal processing circuit with the signal processing circuit.

The support pillars 250 not only function to support the resistive thin film 240 but also form the resistive thin film 240 and the metal pads 220 through the conductive material So that the signal processing circuit can be electrically connected.

Then, the organic sacrificial layer 230 may be removed. (FIG. 7 (e)) The organic sacrificial layer 230 may be removed by plasma burning using a reactive gas containing oxygen to form a spacing space 260 as shown in FIG. 7 (e).

The space between the substrate 210 on which the organic sacrificial layer 230 is formed and the resistive film 240 is left as the spacing space 260 and the space between the spacing spaces 260 can provide an optical resonant structure .

Therefore, in order to minimize the thermal conduction from the surrounding environment to the resistive thin film 240 for the bolometer, the resistive film 240 may be spaced apart by the spaced apart spaces 260 without contacting the substrate 210 with each other.

Although the present invention has been described in detail with reference to the specific embodiments thereof, it will be apparent to those skilled in the art that various modifications and variations can be made without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be defined by the appended claims, as well as the appended claims.

110, 210: substrate 120: organic metal compound layer
130: mixed solution 140: supporting unit
150: nozzle 220: metal pad
230: organic sacrificial layer 240: resistive thin film
250: support column 260: spacing space

Claims (15)

Preparing a mixed solution by mixing an organic metal compound precursor solution containing at least one metal selected from the group consisting of nickel, manganese, and copper into an organic solvent;
Forming an organic metal compound layer on the substrate by a liquid phase process using the mixed solution;
Subjecting the organic metal compound layer to plasma treatment; And
Treating the plasma-treated organic metal compound layer in an oxidizing atmosphere,
In the plasma treatment step, crystal nuclei are formed in the organic metal compound layer,
In the subsequent heat treatment step, the crystal nuclei are grown to change the organic metal compound layer into an oxide thin film having a spinel crystal structure,
The oxide-resistive thin film has a composition of (Ni, Mn, Cu) ₃ O ₄ and has a Mn ³⁺ / Mn ⁴⁺ ratio of 0.1 to 14.3 A method for manufacturing a resistive thin film for a bolometer.
delete The method according to claim 1,
Before the plasma treatment step,
Further comprising a preliminary heat treatment of the organic metal compound layer.
The method according to claim 1,
Wherein the subsequent heat treatment is performed in a temperature range of 330 캜 to 430 캜.
The method according to claim 1,
Wherein the grain size of the oxide-resistant thin film is 10 nm to 70 nm.
delete The method according to claim 1,
Wherein the thickness of the oxide-resistant thin film is 30 nm or more and 100 nm or less.
delete The method according to claim 1,
Wherein the oxide thin film has a composition of a compound represented by the following formula (1).
≪ Formula 1 >
[(Ni, Mn) _{1 - x} Cu _x ] ₃ O ₄ , where x is 0.20? X? 0.30.
The method according to claim 1,
Wherein the oxide-resistant thin film has a composition of a compound represented by the following formula (2).
(2)
[(Ni _y Mn _{1 -y} ) Cu] ₃ O ₄ , and y is 0.1? Y? 0.4.
The method according to claim 1,
Wherein the resistance-temperature coefficient of the oxide-resistant thin film is -1.3% / K to -2.3% / K.
The method according to claim 1,
Wherein the oxide resistive thin film has a resistivity value of 100? Cm or less at room temperature.
Providing a substrate on which a signal processing circuit is formed;
Forming a plurality of metal pads spaced apart from the upper surface of the substrate to transmit an electric signal of the signal processing circuit;
Forming an organic sacrificial layer on the substrate;
Forming a resistive thin film for a bolometer in the manufacturing method according to any one of claims 1, 3 to 5, 7, and 9 to 12 on the organic sacrificial layer; And
And patterning the organic sacrificial layer and the resistive thin film.
14. The method of claim 13,
And forming a support column having one side connected to the metal pad and the other side connected to the resistance thin film.
14. The method of claim 13,
And removing the organic sacrificial layer.

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