KR101801582B1 - Optical signal transmitter and receiver module - Google Patents

Optical signal transmitter and receiver module Download PDF

Info

Publication number
KR101801582B1
KR101801582B1 KR1020150140523A KR20150140523A KR101801582B1 KR 101801582 B1 KR101801582 B1 KR 101801582B1 KR 1020150140523 A KR1020150140523 A KR 1020150140523A KR 20150140523 A KR20150140523 A KR 20150140523A KR 101801582 B1 KR101801582 B1 KR 101801582B1
Authority
KR
South Korea
Prior art keywords
optical
layer
light
disposed
structure layer
Prior art date
Application number
KR1020150140523A
Other languages
Korean (ko)
Other versions
KR20160113508A (en
Inventor
심종인
최원진
신동수
Original Assignee
한양대학교 에리카산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 에리카산학협력단 filed Critical 한양대학교 에리카산학협력단
Publication of KR20160113508A publication Critical patent/KR20160113508A/en
Application granted granted Critical
Publication of KR101801582B1 publication Critical patent/KR101801582B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/26—Reflecting filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80—Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Led Device Packages (AREA)

Abstract

The present invention provides an optical signal transmission module. An optical modulator for modulating and outputting the light output from the optical element by an applied power source, the optical modulator being connected to the optical element and the optical modulator; And an optical waveguide for providing a path through which the light travels, wherein the optical device includes a light emitting portion that generates the light, and a divider that is disposed on the light emitting portion and that filters and transmits the light generated in the light emitting portion, (DBR) filter.

Figure R1020150140523

Description

TECHNICAL FIELD [0001] The present invention relates to an optical signal transmitter and receiver module,

The present invention relates to an optical signal transmitting module and a receiving module, and more particularly, to a short-range high-speed optical signal transmitting apparatus using a DBR optical filter having a cavity on a light emitting diode of a nitride (GaN) will be.

The wired communication network performance is determined by the optical transmission / reception module and the optical components connected to the optical transmission / reception module in the wired communication network for the mobile backhaul / front hall and the wired / wireless integrated subscriber communication network for supporting the wired subscriber communication network or the separated base station.

In the future, the wired optical network consisting of a low-cost high-speed optical transceiver module that is to be used as a backbone of the Internet connection is indispensable, and it operates without temperature compensation in extreme environments from -40 ° C to 150 ° C. Speed wired optical transmission / reception module. The maximum operating temperature of the optical transmitter / receiver module using the general GaAs and InP optical devices is almost impossible to stably drive at a temperature of about 100 ° C or higher due to the limitation of physical properties of GaAs and InP materials. On the other hand. GaN-based optical devices can be operated at around 300 ° C due to their GaN properties, making them ideal for implementing optical transceiver modules operating in extreme environments at high temperatures.

An optical transmission / reception module of a general wired optical communication network includes an optical element, an optical fiber, an optical modulator, and a photodetector. The optical device can be a light emitting diode (LED) or a laser diode (LD). The optical device and the optical modulator can be used for free-space connection using a lens, connection using a material optical waveguide such as a polymer, And can be optically connected to each other through an integrated connection according to forming optical devices and optical modulators. The optical transmission module and the optical reception module are formed separately and transmit optical signals. The optical fiber can be used for optical connection between the optical transmission module and the optical reception module. In the case of optical fiber, it is classified into a plastic optical fiber (polymer material) formed by using a glass optical fiber (silica material) and a polymer material according to the material thereof. Among them, the plastic optical fiber has a very large ratio of the core to the cross-sectional area, so that the optical coupling efficiency between the optical fiber and the optical transmitter (or optical receiver) is very high, the price is low, It is not only strong, but also has low optical loss against bending and can sufficiently transmit light of visible light band, and is recently attracting attention as a material of short-distance wired backbone network as a low-cost short-range visible light optical communication material.

Laser diodes (LDs) can output high-quality high-quality light (for example, spectrum with a narrow half-width of spectrum), which is advantageous as a light source for long-distance large-capacity optical signal transmission. However, since the operation characteristics of the laser diode (LD) are sensitive to the ambient temperature, a temperature compensator is required to obtain a stable operation. When the emitted light is reflected from the periphery and re-enters into the laser diode (LD) The use of an optical isolator is inevitable and the manufacturing cost of the laser diode itself is high and it is difficult to lower the manufacturing cost of the optical signal transmission module using the laser diode. On the other hand, a light emitting diode (LED) has difficulty in high-speed direct modulation by current and transmission of a long-distance optical signal, but it is insensitive to the ambient temperature so that a temperature compensating device is unnecessary, and noise caused by re- An isolator is not required, and the price of a light emitting diode (LED) itself is low, which is advantageous in manufacturing a low-cost optical transmission module.

In order to manufacture a high-speed optical transmission module for short-distance optical wire signal transmission of a few hundred meters or less at a low cost, the advantages of the LED can be advantageously utilized, but the optical signal must be modulated at a high speed. In LED light modulation, there are two ways of directly modulating the LED by current (direct modulation) and by putting the modulator separately on the outside of the LED (external modulation). Although direct modulation can be implemented at low cost, the speed of optical signals through the direct modulation of LEDs has a limit of up to about 100 Mbps to 500 Mbps, considering that the lifetime of LED carriers is usually about 0.2 ns to 1 ns. On the other hand, when the external modulation method is introduced, the price rises above the direct modulation but the high speed modulated optical signal up to several tens of Gbps can be implemented. In addition, the external modulator has a phase modulator and an optical absorption modulator that modulates the phase of the signal with a phase modulator. The electroabsorption modulator operates stably against changes in the external environment and is easy to fabricate, It is suitable for high speed optical modulation for optical fiber transmission.

In order to use the LED as the light source of the optical modulator, it is necessary to control the emission line width of the LED. Since the emission line width of the nitride-based LED is generally as large as about 20 nm, the operating voltage of the electric field absorption type optical modulator is increased in order to enter the electric field absorption type optical modulator and obtain a sufficient extinction ratio. Further, when light of a multi-wavelength having a wide emission line width enters the optical waveguide, the transmission speed is limited by the color dispersion characteristics of the optical transmission path. FIG. 1 shows the result of analyzing the maximum transmission rate according to the half-width of the spectrum of a light source in a case where a transmission distance of 100 m is transmitted to a plastic optical fiber having a dispersion factor of 160 ps / km / nm. For example, if the half width of the spectrum is 2 nm, the 10 Gbps optical signal transmission rate can be transmitted without difficulty through the optical waveguide of 100 meters. If the half width of the spectrum is 7 nm, the 2 Gbps optical signal transmission speed can be transmitted without difficulty through the optical waveguide of 100 meters. Therefore, if a GaN-based light emitting diode (LED) having a half-width of optical spectrum can be realized, high-speed optical transmission at a short distance of about 10 Gbps to 20 Gbps within a distance of several tens of meters to several hundreds of meters that operate at a high temperature of 150 ° C. Thereby making the module manufacturable.

SUMMARY OF THE INVENTION The present invention provides a method and apparatus for transmitting light in a visible light region through a DBR filter having a cavity by narrowing the half width of the optical spectrum, Optical signal transmission module.

SUMMARY OF THE INVENTION The present invention provides a low-cost high-temperature and high-speed optical signal transmission module capable of improving optical modulation speed while using an optical device that does not require a temperature compensation device as thermal stability is guaranteed.

An object of the present invention is to provide an optical signal transmission module capable of operating at a high temperature of 150 ° C or higher.

The present invention provides an optical signal transmission module. An optical modulator for modulating and outputting the light output from the optical element by an applied power source, the optical modulator being connected to the optical element and the optical modulator; And an optical waveguide for providing a path through which the light travels, wherein the optical device includes a light emitting portion that generates the light, and a divider that is disposed on the light emitting portion and that filters and transmits the light generated in the light emitting portion, (DBR) filter.

By way of example, the diviral (DBR) filter is stacked in an intersection of a silicon dioxide optical layer and a titanium dioxide optical layer.

According to one example, the DBR filter comprises a first reflector in which a silicon dioxide optical layer and a titanium dioxide optical layer are stacked alternately, a cavity disposed on the first reflector and provided with a plurality of titanium dioxide optical layers, And a second reflector disposed on the cavity, wherein the silicon dioxide optical layer and the titanium dioxide optical layer are alternately stacked.

In one example, the DBR filter comprises a first reflective portion provided with four silicon dioxide optical layers and three titanium dioxide optical layers provided in an intersection, a cavity provided with four titanium dioxide optical layers on the first reflective portion, And a second reflector on which two silicon dioxide optical layers and two titanium dioxide optical layers are provided in an alternating manner on the cavity.

According to an example, the DBR filter includes a first reflective portion, a cavity, and a second reflective portion that are sequentially stacked on the light emitting portion, wherein the first reflective portion and the second reflective portion are made of oxide And the cavity has a thickness greater than that of the first optical layer or the second optical layer, and the cavity has a plurality of second optical layers stacked thereon, and the cavity has a thickness greater than that of the first optical layer or the second optical layer.

According to one example, the second optical layer has a higher refractive index than the first optical layer.

According to one example, the first optical layer has a refractive index of 1.4 to 1.5, and the second optical layer has a refractive index of 2.0 to 3.0.

According to one example, the first optical layer is any one of SiO X (1? X ? 3) or MgF 2 and the second optical layer is any one of TiO x (1? X ? 3), TaO x one of ≤3) or ZrO 2.

According to an embodiment, the light emitting portion includes an active layer for generating the light, a lower structure layer disposed under the active layer, an upper structure layer disposed over the active layer, And a second electrode spaced apart from the active layer on the lower structure layer.

According to an example, the lower structure layer, the upper structure layer, and the active layer are gallium nitride (GaN) -based materials.

According to one example, the lower structure layer, the upper structure layer, and the active layer may be formed of at least one of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), or aluminum gallium indium nitride (AlGaInN) ≪ / RTI >

According to one example, the optical system further includes a lens disposed on the DBR filter, and the lens condenses the light into the optical waveguide.

According to an embodiment, the lens is convex in the direction from the light emitting portion toward the DBR filter.

According to one example, the optical waveguide includes a core portion and a clad layer surrounding the core portion.

According to an example, the core portion may include a polystyrene (PS), a polysiloxane series, an ultraviolet (UV) curing series, a polyimide series, or a silicone series polymer.

According to one example, the optical modulator includes a light absorbing modulating layer connected to the optical waveguide, an upper structural layer disposed on the light absorbing modulating layer, a lower structural layer disposed below the light absorbing modulating layer, And a second electrode disposed on the underlying structure layer.

According to an exemplary embodiment, the optical waveguide further includes a ridge waveguide disposed on the upper structure layer and connected to the optical waveguide, wherein the ridge waveguide has a constant width and extends in a first direction.

According to one example, the optical waveguide further includes a ridge waveguide disposed on the substructure layer and in contact with a side surface of the optical absorption modulating layer, and the ridge waveguide is connected to the optical waveguide.

By way of example, from a plan viewpoint, the ridge waveguide has the same width as the optical absorption modulating layer.

According to an example, a light reflection layer is provided between the lower structure layer and the light absorption modulation layer.

The present invention provides an optical signal receiving module. The optical signal receiving module includes an optical waveguide for providing a path through which the optical signal travels, and a detector for detecting the optical signal, wherein the detector includes a light detecting layer for detecting the optical signal, And an upper structure layer disposed on top of the active layer, wherein the detector is a gallium nitride (GaN) -based material.

According to one example, the detector further comprises a first electrode disposed on the upper structure layer and a second electrode disposed on the lower structure layer so as to be spaced apart from the photo detection layer.

According to an example, the core portion may include a polystyrene (PS), a polysiloxane series, an ultraviolet (UV) curing series, a polyimide series, or a silicone series polymer.

According to the embodiment of the present invention, in the spectrum of the generated light of the gallium nitride (LED) light emitting diode (LED) in the visible light region which can adjust the emission spectrum of green from the near ultraviolet ray according to the structure of the light emitting layer or the composition ratio of the material, An optical device having a narrow spectral half width can be realized.

According to the embodiment of the present invention, an optical transmission / reception module with a visible light band which is mechanically strong against bending can be provided by using an optical waveguide composed of a polymer material.

According to an embodiment of the present invention, an optical signal transmitting / receiving module that can be always used even at a high driving temperature can be provided by constituting an optical device and an optical modulator with a gallium nitride (GaN) material.

1 is a graph showing spectral characteristics of a general light emitting diode.
2 is a perspective view illustrating an optical signal transmission module according to an embodiment of the present invention.
3 is a cross-sectional view taken along the line A-A 'in Fig.
4 is a cross-sectional view showing a DBI filter having a cavity according to an embodiment of the present invention.
5 is a graph illustrating the emission angle of light passing through a lens according to an embodiment of the present invention.
6 is a cross-sectional view taken along the line B-B 'in FIG.
7A is a cross-sectional view taken along line C-C 'of FIG. 2 according to another embodiment of the present invention.
7B is a plan view showing an optical modulator according to another embodiment of the present invention.
8A is a cross-sectional view taken along line C-C 'of FIG. 2 according to another embodiment of the present invention.
8B is a plan view showing an optical modulator according to another embodiment of the present invention.
9 is a cross-sectional view taken along the line C-C 'in FIG.
10 is a graph showing a spectrum of light of a light emitting diode varying with or without a DBR filter.
11 is a graph showing the change of the 3 dB bandwidth according to the change of the ridge width of the optical modulator.
12 is a conceptual diagram illustrating modulation of light using an optical signal transmission module according to an embodiment of the present invention.
13 is a perspective view illustrating an optical signal receiving module according to another embodiment of the present invention.
14 is a sectional view taken along the line E-E 'in Fig.
15 is a conceptual diagram illustrating modulation of an optical signal into an electrical signal using an optical signal receiving module according to another embodiment of the present invention.
16 is a graph illustrating light output according to driving temperature of an optical signal transmitting / receiving module according to embodiments of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

In addition, the embodiments described herein will be described with reference to cross-sectional views and / or plan views, which are ideal illustrations of the present invention. In the drawings, the thicknesses of the films and regions are exaggerated for an effective description of the technical content. Thus, the shape of the illustrations may be modified by manufacturing techniques and / or tolerances. Therefore, the embodiments of the present invention are not limited to the specific forms shown, but also include changes in the forms that are generated according to the manufacturing process. For example, the etched area shown at right angles may be rounded or may have a shape with a certain curvature. Thus, the regions illustrated in the figures have schematic attributes, and the shapes of the regions illustrated in the figures are intended to illustrate specific types of regions of the elements and are not intended to limit the scope of the invention.

2 is a perspective view illustrating an optical signal transmission module according to an embodiment of the present invention.

2, the optical signal transmitting module 1 may include an optical device 100, an optical waveguide 200, an optical modulator 300, and a driving chip 400. The optical device 100, the optical waveguide 200, the optical modulator 300 and the driving chip 400 may be disposed on the carrier substrate 10. The carrier substrate 10 may be a ceramic substrate, a glass substrate, a metal substrate, a plastic substrate, or the like, but is not limited thereto.

The driving chip 400, the optical device 100, and the optical modulator 300 may be disposed along the first direction x. The optical device 100 and the driving chip 400 may be electrically connected to each other and the driving chip 400 may provide an electrical signal to the optical device 100. Through the electric signal provided by the driving chip 400, the optical element 100 can output light. The optical element 100 may be, for example, a light emitting diode (LED). The light emitting diode (LED) can prevent the output light from being reflected from the outside and return to the inside of the LED, and the light emitting diode (LED) The risk of blindness may be less. Therefore, light emitting diodes (LEDs) with low risk generate high output light and can be used for long distance transmission.

The optical waveguide 200 can connect the optical device 100 and the optical modulator 300. The light output from the optical device 100 may be provided to the optical modulator 300 through the optical waveguide 200. [

The optical modulator 300 can modulate the light input through the electrical signal provided by the driving chip 400. The optical modulator 300 may be an electro-absorption modulator (EAM). The electric field absorption type optical modulator (EAM) can be driven at a low voltage and the device can be downsized. In the optical modulator 300, the degree of light absorption varies depending on the applied voltage. The intensity of the light emitted from the optical modulator 300 can be modulated in accordance with a change in the voltage applied to the optical modulator 300 and the incident light can be emitted in an off- ) Optical signal can be modulated. The optical modulator 300 may have a ridge width d extending in a second direction y perpendicular to the first direction x, the direction in which light travels.

FIG. 3 is a cross-sectional view taken along line A-A 'of FIG. 2, and FIG. 4 is a cross-sectional view illustrating a DBR filter having a cavity according to an embodiment of the present invention.

Referring to FIGS. 2 to 4, the optical device 100 can output light. The optical element 100 includes a light emitting unit 150 for generating light, a DBR filter 180 and a DBR filter 180 for filtering and transmitting the light generated in the light emitting unit 150 And a lens 190 for condensing the transmitted light.

The light emitting portion 150 may include a first substrate 110, a first lower structure layer 120, a first active layer 130, and a first upper structure layer 140. The first lower structure layer 120, the first active layer 130, and the first upper structure layer 140 may be sequentially stacked on the first substrate 110. The first substrate 110 may include, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, a plastic substrate, or a glass substrate.

The first substructure layer 120 may be disposed on the first substrate 110. The first substructure layer 120 may be an n-type semiconductor layer including a gallium nitride (GaN) based material. For example, the first substructure layer 120 may be formed of a material selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), or aluminum gallium indium nitride (Al x Ga y In z N, x + y + z = 1, 0 x 1, 0 y 1, 0 z 1). Also, the first substructure layer 120 may be formed of a nitride doped with an n-type dopant. The n-type dopant may include silicon (Si), germanium (Ge), tin (Sn), and the like. The first substructure layer 120 may have a structure in which a first layer doped with an n-type dopant and a second layer doped with an n-type dopant are stacked alternately. It is also possible to grow the first substructure layer 120 as a single-layer n-type nitride layer. The first electrode 125 may be formed on the upper surface of the exposed first substructure layer 120. The first electrode 125 may include a Cr / Au film, a Cr / Ni / Au film, a Ti / Al / Au film, or a Ti / Ni / pt / Au film.

The first active layer 130 may be disposed on the first substructure layer 120. The first active layer 130 may cover a part of the upper portion of the first substructure 120 and may be spaced apart from the first electrode 125. The first active layer 130 can generate light by an external power source. The generated light may proceed to the first and second upper structure layers 120 and 140. The first active layer 130 may have a multi-quantum well (MQW) structure having a plurality of quantum well structures. The first active layer 130 may have a quantum barrier layer and a quantum well layer, and the quantum barrier layer and the quantum well layer of the first active layer 130 of the multiple quantum well structure may have different x, y, and z composition ratios Aluminum gallium indium nitride (Al x Ga y In z N, x + y + z = 1, 0 x 1, 0 y 1, 0 z 1). At this time, the band gap of the quantum well layer should be smaller than the quantum barrier layer, the first lower structure layer 120 and the first upper structure layer 140.

The first superstructure layer 140 may be disposed on the first active layer 130. The first superstructure layer 140 may be a p-type semiconductor layer including a gallium nitride (GaN) -based material. For example, the first superstructure layer 140 may be any one of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN), or p-type aluminum gallium indium nitride (AlGaInN). The first upper structure layer 140 may be formed by laminating two or more of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN) or p-type aluminum gallium indium nitride (AlGaInN) Structure. A second electrode 145 may be disposed on the first upper structure layer 140. The second electrode 145 may include a transparent electrode layer, a Cr / Au film, a Ni / Au film, a Ni / Ti / Au film, or a pt / Au film. The transparent electrode layer is made of a transparent conductive oxide and may be formed of any one of indium tin oxide (ITO), indium oxide (CIO), zinc oxide (ZnO), and nickel oxide (NiO).

The DBR filter 180 may be disposed on the first superstructure layer 140. The DBR filter 180 may partially cover the upper surface of the first upper structure layer 140 and may be spaced apart from the second electrode 145. The DBI filter 180 may be a structure in which a silicon dioxide optical layer and a titanium dioxide optical layer are stacked alternately. In addition, DB al (DBR) filter 180 may be a SiO X (1≤X≤3), MgF 2, or any one of the first optical layer and the TiO x (1≤X≤3), TaO x (1≤X≤ 3) or ZrO 2 may be a cross-laminated structure. The first optical layer may have a refractive index of 1.4 to 1.5 and the second optical layer may have a refractive index of 2.0 to 3.0. The DBR filter 180 may include a first reflector 183, a cavity 185, and a second reflector 187 that are sequentially stacked on the light emitting portion 150. The first reflective portion 183 and the second reflective portion 187 may have a structure in which a first optical layer and a second optical layer containing different oxides are stacked alternately and the cavity 185 may have a structure in which a second optical layer Or may be a laminated structure. For example, the first optical layer may be a silicon dioxide optical layer, and the second optical layer may be a titanium dioxide optical layer. The cavity 185 may have a thickness greater than that of the first optical layer or the second optical layer. Each of the optical layers may have an optical thickness (QWOT) that is one quarter of the wavelength of light. According to an embodiment of the present invention, the first reflector 183 may be a structure in which four silicon dioxide optical layers and three titanium dioxide optical layers are stacked in an intersecting manner. The cavity 185 may be a structure provided with four titanium dioxide optical layers. The second reflective portion 187 may have a structure in which two silicon dioxide optical layers and two titanium dioxide optical layers are stacked alternately. The cavity 185 is formed only of the titanium dioxide optical layer and can resonate and transmit the light input to the DBR filter 180. The larger the number of pairs of layers in which the silicon dioxide optical layer and the titanium dioxide optical layer are stacked alternately, the half width of the spectrum transmitted through the DBR filter 180 may be reduced. As the half width of the spectrum decreases, the wavelength of a specific band can be selectively transmitted.

The lens 190 may be disposed on a DBI filter 180. The lens 190 may be convex semicircular or semi-elliptical in a third direction z perpendicular to the first direction x. The lens 190 can condense the light that has passed through the DBR filter 180 onto the optical waveguide 200. In the absence of the lens 190, light passing through the DBI filter 180 may be emitted with a wide emission angle of several tens to 150 degrees. When light having such a wide radiation angle is incident on the optical waveguide 200, light having a wider angle than the numerical aperture of the optical waveguide 200 can not enter the optical waveguide 200, . That is, the larger the radiation angle of light is, the smaller the amount of light incident on the optical waveguide 200 is, and the greater the loss of light incident on the optical waveguide 200 is. When the lens 190 is disposed between the DBR filter 180 and the optical waveguide 200, the angle of reflection of the light incident on the optical waveguide 200 can be reduced. Referring to FIG. 5, a light emitting angle according to the intensity of light displayed on the x-axis is shown. When the lens 190 according to the embodiment of the present invention is disposed, the radiation angle of the light can be reduced to less than 10 degrees.

2 to 4, the optical coupling efficiency of the optical device 100 is increased through the lens 190 disposed between the DBR filter 180 and the optical waveguide 200, You can reduce it.

6 is a cross-sectional view taken along the line B-B 'in FIG.

Referring to FIGS. 2 and 6, the optical modulator 300 may modulate the light output from the optical device 100 into an optical signal. The optical modulator 300 may include a second substrate 310, a second substructure layer 320, a light absorbing modulating layer 330, a second superstructure layer 340, and a support layer 350.

The second substrate 310 may be laminated on the carrier substrate 10. The second substrate 310 may be formed of, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride (GaN) substrate, a zinc oxide (ZnO) substrate, a gallium arsenide ) Substrate, a lithium aluminum oxide (LiAl 2 O 3 ) substrate, a boron nitride (BN) substrate, an aluminum nitride (AlN) substrate, a plastic substrate, or a glass substrate.

The second substructure layer 320 may be disposed on the second substrate 310. The second substructure layer 320 may be an n-type semiconductor layer including a gallium nitride (GaN) based material. For example, the second substructure layer 320 can be formed of a material selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), or aluminum gallium indium nitride (Al x Ga y In z N, x + y + z = 1, 0 x 1, 0 y 1, 0 z 1). In addition, the second substructure layer 320 may be formed of a nitride doped with an n-type dopant. The n-type dopant may include silicon (Si), germanium (Ge), tin (Sn), and the like. The second substructure layer 320 may be a structure in which a first layer doped with an n-type dopant and a second layer doped with an n-type dopant are stacked in an alternating manner. The second substructure layer 320 may also be grown as a single layer n-type nitride layer. A third electrode 325 may be formed on the exposed upper surface of the second substructure layer 320. The third electrode 325 may include a Cr / Au film, a Cr / Ni / Au film, a Ti / Al / Au film, or a Ti / Ni / pt / Au film.

The light absorption modulation layer 330 may be directly connected to the optical waveguide 200 to receive light generated in the optical device 100. The light absorption modulation layer 330 may cover a part of the upper portion of the second substructure layer 320 and may be disposed apart from the third electrode 325. The light absorbing modulating layer 330 can modulate light by an electrical signal provided from an external {e.g., the driving chip 400). The light absorbing modulating layer 330 includes a plurality of quantum wells The optical absorption modulating layer 330 may have a multi-quantum well (MQW) structure. The optical absorption modulating layer 330 may include a gallium nitride (GaN) The quantum barrier layer and the quantum well layer of the optical absorption modulating layer 330 of the multiple quantum well structure may have a quantum barrier layer and a quantum well layer and may have aluminum gallium indium nitride may be made of (Al x Ga y in z N , x + y + z = 1, 0≤x≤1, 0≤y≤1, 0≤z≤1). At this time, the band gap of the quantum well layer The second lower structure layer 320 and the second upper structure layer 340. In this case,

The second upper structure layer 340 may be disposed on the light absorption modulation layer 330. The second upper structure layer 340 may be a p-type semiconductor layer including a gallium nitride (GaN) based material. For example, the second upper structure layer 340 may be any one of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN), or p-type aluminum gallium indium nitride (AlGaInN). The second upper structure layer 340 may be formed by laminating two or more of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN) or p-type aluminum gallium indium nitride (AlGaInN) Structure. A fourth electrode 345 may be disposed on the second upper structure layer 340. The fourth electrode 345 may include a transparent electrode layer, a Cr / Au film, a Ni / Au film, a Ni / Ti / Au film, or a pt / Au film. The transparent electrode layer is made of a transparent conductive oxide and may be formed of any one of indium tin oxide (ITO), indium oxide (CIO), zinc oxide (ZnO), and nickel oxide (NiO).

A support layer 350 may be provided on the second substructure layer 320. The support layer 350 may be provided to cover a portion of the second substructure layer 320. A portion of the fourth electrode 345 may be disposed on the support layer 350. The support layer 350 may cover the sides of the light absorption modulation layer 330 and the second upper structure layer 340. The support layer 350 may serve to support the light absorption modulation layer 330, the second upper structure layer 340, and the fourth electrode 345. The support layer 350 may be a low dielectric constant material, for example, the support layer 350 may be a benzocyclobutene (BCB) resin.

FIG. 7A is a cross-sectional view taken along line C-C 'of FIG. 2 according to another embodiment of the present invention, and FIG. 7B is a plan view of an optical modulator according to another embodiment of the present invention.

Referring to FIGS. 2, 7A and 7B, a ridge waveguide 280 may be provided on the second upper structure layer 340. The ridge waveguide 280 may connect the optical waveguide 200 and the optical modulator 300. The ridge waveguide 280 may have a width similar to the ridge width d of the optical modulator 300. The ridge waveguide 280 may have a reduced height extending in the third direction (z) as it extends in the first direction (x). Therefore, the light incident on the ridge waveguide 280 through the optical waveguide 200 can be coupled to the optical absorption modulation layer 330 as it goes in the first direction (x). The ridge waveguide 280 may be a polymer. The third electrode 325 may be provided to cover a portion of the second lower structure layer 320 and the support layer 350 and the fourth electrode 345 may be provided to cover the second upper structure layer 340 and the support layer 350. [ As shown in FIG.

FIG. 8A is a cross-sectional view taken along line C-C 'of FIG. 2 according to another embodiment of the present invention, and FIG. 8B is a plan view illustrating an optical modulator according to another embodiment of the present invention.

8A and 8B, the ridge waveguide 280 may be provided to contact the side surfaces of the second upper structure layer 340 and the light absorption modulation layer 330. A light reflecting layer 335 may be provided between the ridge waveguide 280 and the second substructure layer 320. The light reflection layer 335 prevents the light transmitted through the ridge waveguide 280 from being refracted to the second substructure layer 320 and allows the incident light to be transmitted to the light absorption modulation layer 330. The light reflection layer 335 may be a metal material or a silicon oxide film (SiO 2 ). The ridge waveguide 280 may have a width similar to the ridge width d of the optical modulator 300. The third electrode 325 may be provided to cover a portion of the second lower structure layer 320 and the support layer 350 and the fourth electrode 345 may be provided to cover the second upper structure layer 340 and the support layer 350. [ As shown in FIG.

9 is a cross-sectional view taken along the line C-C 'in FIG.

2 and 9, the optical waveguide 200 can connect the upper surface of the lens 190 of the optical device 100 and the ridge waveguide 350 of the optical modulator 300. [ The optical waveguide 200 may include a core 210 and a cladding layer 230. The core 210 may provide a path through which light travels. The core 210 may include a polystyrene (PS), a polysiloxane series, an ultraviolet (UV) curable series, a polyimide series, or a silicone series polymer. The core 210, which is a plastic material, may be flexible, light, and inexpensive. Also, the optical waveguide 200 as a plastic material can have an optical modulation speed of 5 Gbps to 10 Gbps. The clad layer 230 may surround the core 210. The cladding layer 230 may be silicon or air. The refractive index of the clad layer 230 may be lower than that of the core 210. Accordingly, the light incident on the optical waveguide 200 can travel through the core 210.

10 is a graph showing a spectrum of light of a light emitting diode varying with or without a DBR filter.

10, the half width of the light B passing through the DBR filter is the half width of half of the light A that has not passed through the DBR filter, width. The half-width of the light A that did not pass through the DBR filter was 18 nm and the half-width of the light B that passed through the DBR filter was 5 nm. The DBR filter can narrow the spectral half width of the transmitted light and provide light (blue light) having a wavelength of 450 nm and a half-width of 5 nm.

11 is a graph showing the change of the 3 dB bandwidth according to the change of the ridge width of the optical modulator.

Referring to FIGS. 2 and 11, the bandwidth of the light passing through the optical modulator 300 may vary according to the ridge width d2 of the optical modulator 300. FIG. At this time, the relationship of the bandwidth of the light passing through the optical modulator 300 according to the change of the ridge width d of the optical modulator 300 can be confirmed. The ridge width d of the optical modulator 300 was 60 占 퐉 (a), 80 占 퐉 (b), and 100 占 퐉 (c). As the ridge width d of the optical modulator 300 is wider, the bandwidth of the light passing through the optical modulator 300 may be reduced. Also, as the ridge width d of the optical modulator 300 is wider, the spectral bandwidth may be reduced. The larger the band width of the output light, the smaller the half width of the output light. Therefore, the ridge width d of the optical modulator 300 can be adjusted to select the optical output and the bandwidth as required.

12 is a conceptual diagram illustrating modulation of light using an optical signal transmission module according to an embodiment of the present invention.

2 and 12, the optical signal transmitting module 1 may output the optical signal L1 by modulating an electrical signal E1 provided to the optical signal transmitting module 1. [ Quot; 1 state "when the electric signal E1 is provided, and" 0 state "when the electric signal E1 is not provided. The optical signal transmitting module 1 can emit the optical signal L1 and the optical signal transmitting module 1 can transmit the optical signal L1 when the optical signal transmitting module 1 is in the "1 state & (Off-state). Accordingly, the optical signal transmitting module 1 can output a pulsed light signal that has a period and emits (on-state) or does not emit (off-state) the optical signal L1. An optical signal transmitting module 1 using a light emitting diode (LED) for outputting visible light as the optical device 100 can be used for short-distance communication. For example, the optical signal transmission module 1 may be an intelligent transport system (ITS), a visual communication, a short distance optical fiber communication, an intranet, a home networking and an Internet (IoT) And the like. The optical signal transmission module 1 according to the embodiment of the present invention can be used in a data transmission network having a transmission rate of several hundred Mbps to several tens Gbps in the future.

FIG. 13 is a perspective view showing an optical signal receiving module according to another embodiment of the present invention, and FIG. 14 is a sectional view taken along the line E-E 'in FIG.

13 and 14, the optical signal receiving module 2 may include a photodetector 1100, an optical waveguide 1200, and a driving chip 1400. The photodetector 1100, the optical waveguide 1200, and the driving chip 1400 may be disposed on the carrier substrate 20. The carrier substrate 20 may be a ceramic substrate, a glass substrate, a metal substrate, a plastic substrate, or the like, but is not limited thereto.

The photodetector 1100 and the driving chip 1400 may be electrically connected and the driving chip 1400 may provide an electrical signal to the photodetector 1100. [

The photodetector 1100 can convert an optical signal input to the photodetector 1100 into an electrical signal by an applied power source. The photodetector 1100 may include a substrate 1110, a third bottom layer 1120, a photodetector layer 1130, and a third top layer 1140. A third lower structure layer 1120, a light detecting layer 1130, and a third upper structure layer 1140 may be sequentially stacked on the substrate 1110. [ The substrate 1110 may be formed of, for example, a sapphire substrate, a silicon substrate, a silicon carbide substrate, a gallium nitride (GaN) substrate, a zinc oxide (ZnO) substrate, a gallium arsenide , A lithium aluminum oxide (LiAl 2 O 3 ) substrate, a boron nitride (BN) substrate, an aluminum nitride (AlN) substrate, a plastic substrate, or a glass substrate.

The third underlying layer 1120 may be disposed on the substrate 1110. The third underlying layer 1120 may be an n-type semiconductor layer containing a gallium nitride (GaN) based material. For example, the third underlying layer 1120 can be formed of a material selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), or aluminum gallium indium nitride (Al x Ga y In z N, x + y + z = 1, 0 x 1, 0 y 1, 0 z 1). Also, the third underlying layer 1120 may be formed of a nitride doped with an n-type dopant. The n-type dopant may include silicon (Si), germanium (Ge), tin (Sn), and the like. The third underlying layer 1120 may be a structure in which a first layer doped with an n-type dopant and a second layer doped with an n-type dopant are stacked in an alternating manner. The third underlying layer 1120 may also be grown as a single layer n-type nitride layer. A fifth electrode 1125 may be formed on the exposed upper surface of the third underlying layer 1120. The fifth electrode 1125 may include a Cr / Au film, a Cr / Ni / Au film, a Ti / Al / Au film, or a Ti / Ni / pt / Au film.

The light detection layer 1130 may be disposed on the third underlying layer 1120. The light detection layer 1130 may cover a portion of the upper portion of the lower structure layer 1120 and may be disposed apart from the fifth electrode 1125. The optical detection layer 1130 may have a multi-quantum well (MQW) structure having a plurality of quantum well structures. The light-detecting layer 1130 may include a gallium nitride (GaN) -based material. The photodetector layer 1130 may have a quantum barrier layer and a quantum well layer, and the quantum barrier layer and the quantum well layer of the photodetector layer 1130 of the multiple quantum well structure may have different x, y, and z composition ratios Aluminum gallium indium nitride (Al x Ga y In z N, x + y + z = 1, 0 x 1, 0 y 1, 0 z 1). At this time, the band gap of the quantum well layer should be smaller than the quantum barrier layer, the third lower structure layer 1120 and the third upper structure layer 1140.

The third super structure layer 1140 may be disposed on the light detecting layer 1130. The third upper structure layer 1140 may be a p-type semiconductor layer including a gallium nitride (GaN) -based material. For example, the third upper structure layer 1140 may be any one of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN), or p-type aluminum gallium indium nitride (AlGaInN). The third upper structure layer 1140 may be formed by laminating two or more of p-type gallium nitride (GaN), p-type aluminum gallium nitride (AlGaN) or p-type aluminum gallium indium nitride (AlGaInN) Structure. A sixth electrode 1145 may be disposed on the third upper structure layer 1140. The sixth electrode 1145 may include a transparent electrode layer, a Cr / Au film, a Ni / Au film, a Ni / Ti / Au film, or a pt / Au film. The transparent electrode layer is made of a transparent conductive oxide and may be formed of any one of indium tin oxide (ITO), indium oxide (CIO), zinc oxide (ZnO), and nickel oxide (NiO).

The optical waveguide 1200 can transmit an incident optical signal to the optical detecting layer 1130. The optical waveguide 1200 may have the same or similar structure as the optical waveguide 200 of FIG. The optical waveguide 1200 may be formed of a polymer material or a gallium nitride (GaN) -based material.

15 is a conceptual diagram illustrating modulation of an optical signal into an electrical signal using an optical signal receiving module according to another embodiment of the present invention.

13 and 15, the optical signal receiving module 2 can output an electrical signal E2 by modulating the optical signal L2 provided to the optical signal receiving module 2. [ State when the optical signal L2 is provided and may be referred to as " off-state "when the optical signal L2 is not provided. The optical signal receiving module 2 can output the electric signal E2 when the optical signal receiving module 2 is in the on-state and the optical signal receiving module 2 outputs the electrical signal E2 when the optical signal receiving module 2 is in the off- E2) (1 state). Accordingly, the optical signal receiving module 2 can output an electric pulse signal wave having a period and outputting (1 state) or outputting (2 states) an electric signal E2. The optical signal receiving module 2 can be used for short-distance communication with the optical signal receiving module 1 of FIG. For example, the optical signal receiving module 2 may be an ITS, a visual communication, a short distance optical fiber communication, an intranet, a home networking and an Internet (IoT) And the like. The optical signal receiving module 2 according to the embodiment of the present invention can be used in a data transmission network having a transmission rate of several hundred Mbps to several tens Gbps in the future.

16 is a graph illustrating light output according to driving temperature of an optical signal transmitting / receiving module according to embodiments of the present invention.

Referring to FIGS. 2, 13 and 16, considering the limit of the optical output reduction according to the temperature change to be 2.5 dB, the driving temperature of the optical signal transmitting / receiving modules 1 and 2 according to the embodiments of the present invention is maximum 370 < 0 > C. The optical device 100 of the optical signal transmitting module 1 and the optical modulator 300 and the optical detector 1100 of the optical signal receiving module 2 are formed of a gallium nitride (GaN) The optical signal receiving module 1 and the optical signal receiving module 2 can be driven at a high temperature of 150 ° C or higher. As the temperature at which the optical signal transmitting module 1 and the optical signal receiving module 2 are drivable at all times is increased, the optical signal transmitting module 1 and the optical signal receiving module 2 are operated in a high temperature environment, It is possible to provide a next generation signal transmission / reception which can be applied to an industry that requires stable transmission and reception of optical signals with high reliability and reliability.

Claims (23)

An optical element for outputting light;
An optical modulator adjacent to the optical device and modulating and outputting the light output from the optical device; And
And an optical waveguide connecting the optical element and the optical modulator and providing a path through which the light travels,
The optical device includes:
A light emitting portion for generating the light; And
(DBR) filter disposed on the light emitting unit and filtering and transmitting the light generated in the light emitting unit,
The DBR filter comprises:
A first reflector, a cavity, and a second reflector sequentially stacked on the light emitting portion,
Wherein the first reflective portion and the second reflective portion are formed by alternately stacking a first optical layer and a second optical layer containing different oxides,
Wherein the cavity is formed by stacking a plurality of the second optical layers,
Wherein the cavity has a thickness greater than that of the first optical layer or the second optical layer. delete The method according to claim 1,
And the second optical layer has a refractive index higher than that of the first optical layer. The method of claim 3,
Wherein the first optical layer has a refractive index of 1.4 to 1.5 and the second optical layer has a refractive index of 2.0 to 3.0. The method according to claim 1,
Wherein the first optical layer is any one of SiO X (1? X ? 3) or MgF 2 ,
Wherein the second optical layer is one of TiO x (1? X ? 3), TaO x (1? X ? 3), or ZrO 2 . The method according to claim 1,
Wherein the first optical layer comprises silicon dioxide,
Wherein the second optical layer comprises titanium dioxide. delete The method according to claim 6,
Said first reflector comprising four silicon dioxide optical layers and three titanium dioxide optical layers provided in an intersection,
Said cavity comprising a titanium dioxide optical layer provided on said first reflector,
Wherein the second reflector comprises two silicon dioxide optical layers and two titanium dioxide optical layers provided in an alternating fashion on the cavity. The method according to claim 1,
The light emitting unit includes:
An active layer for generating the light;
A lower structure layer disposed under the active layer;
An upper structure layer disposed on the active layer;
A first electrode disposed on the upper structure layer and spaced apart from the DBR filter; And
And a second electrode disposed on the lower structure layer and spaced apart from the active layer. 10. The method of claim 9,
Wherein the lower structure layer, the upper structure layer, and the active layer are gallium nitride (GaN) -based materials. 11. The method of claim 10,
Wherein the lower structure layer, the upper structure layer and the active layer are formed of a material selected from the group consisting of gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), or aluminum gallium indium nitride (AlGaInN) Signal transmission module. The method according to claim 1,
Further comprising a lens disposed on the DBR filter,
And the lens condenses the light into the optical waveguide. 13. The method of claim 12,
Wherein the lens is convex in a direction from the light emitting part toward the DBR filter. The method according to claim 1,
The optical waveguide includes:
A core portion; And
And a clad layer surrounding the core portion. 15. The method of claim 14,
Wherein the core portion comprises a polymer selected from the group consisting of polystyrene (PS), polysiloxane series, ultraviolet (UV) curable series, polyimide series, and silicone polymers. The method according to claim 1,
The optical modulator comprising:
A light absorption modulation layer connected to the optical waveguide;
An upper structure layer disposed on the light absorption modulation layer;
A lower structure layer disposed below the light absorption modulation layer;
A first electrode disposed on the upper structure layer; And
And a second electrode disposed on the underlying structure layer. 17. The method of claim 16,
And a ridge waveguide disposed on the upper structure layer and connected to the optical waveguide,
Wherein the ridge waveguide has a constant width and extends in a first direction. 17. The method of claim 16,
Further comprising a ridge waveguide disposed on the lower structure layer and in contact with a side surface of the light absorption modulation layer,
And the ridge waveguide is connected to the optical waveguide. 19. The method of claim 18,
From the viewpoint of planarization, the ridge waveguide has the same width as the optical absorption modulating layer. 19. The method of claim 18,
And a light reflection layer is provided between the lower structure layer and the light absorption modulation layer. An optical waveguide for providing a path through which the optical signal travels; And
And a detector for detecting the optical signal,
The detector comprising:
A photodetector layer for detecting the optical signal;
A lower structure layer disposed under the light detection layer; And
And an upper structure layer disposed on the upper portion of the light detection layer,
Wherein the detector is a gallium nitride (GaN) -based material. 22. The method of claim 21,
The detector comprising:
A first electrode disposed on the upper structure layer; And
And a second electrode disposed on the lower structure layer so as to be spaced apart from the light detection layer. 22. The method of claim 21,
Wherein the core portion comprises a polymer selected from the group consisting of polystyrene (PS), polysiloxane series, ultraviolet (UV) curable series, polyimide series, and silicone polymers.

KR1020150140523A 2015-03-19 2015-10-06 Optical signal transmitter and receiver module KR101801582B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020150038330 2015-03-19
KR20150038330 2015-03-19

Publications (2)

Publication Number Publication Date
KR20160113508A KR20160113508A (en) 2016-09-29
KR101801582B1 true KR101801582B1 (en) 2017-12-21

Family

ID=57073512

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150140523A KR101801582B1 (en) 2015-03-19 2015-10-06 Optical signal transmitter and receiver module

Country Status (1)

Country Link
KR (1) KR101801582B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113778163B (en) * 2021-11-11 2022-02-15 深圳市时代速信科技有限公司 Gallium nitride device with temperature compensation function

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100274701B1 (en) * 1997-04-09 2000-12-15 모리시타 요이찌 Optical transmitter receiver
KR100324288B1 (en) * 1998-03-26 2002-02-21 무라타 야스타카 Opto-electronic integrated circuit
JP2010271742A (en) * 2005-03-08 2010-12-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical modulator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100274701B1 (en) * 1997-04-09 2000-12-15 모리시타 요이찌 Optical transmitter receiver
KR100324288B1 (en) * 1998-03-26 2002-02-21 무라타 야스타카 Opto-electronic integrated circuit
JP2010271742A (en) * 2005-03-08 2010-12-02 Nippon Telegr & Teleph Corp <Ntt> Semiconductor optical modulator

Also Published As

Publication number Publication date
KR20160113508A (en) 2016-09-29

Similar Documents

Publication Publication Date Title
CN109075532B (en) High speed VCSEL device
US10663774B2 (en) Optical transmission module, optical transceiver, and optical communication system including same
EP2720327B1 (en) Hybrid vertical cavity laser for photonic integrated circuit
CN110492350A (en) Optical receiver system and the method for receiving optical signal
CN104638080B (en) It include the optical device of three coupled quantum well structures with multiple level
US20060157723A1 (en) Light emitting device
KR101801582B1 (en) Optical signal transmitter and receiver module
KR20180028331A (en) Electro-absorption modulator, and optical communication system
US10082684B2 (en) Optical modulation employing high contrast grating lens
KR101876949B1 (en) Optical module, optical transceiver and communication system including the same
KR102038623B1 (en) Optical modualator and 3D image acquisition apparatus including the same
CN111830647A (en) Photoelectric coupling device
Silvestre Optoelectronics, photonics and sensors
KR20180085221A (en) Semiconductor device and optical module including the same
US11394468B2 (en) System and method for transferring optical signals in photonic devices and method of making the system
US20240213382A1 (en) Optoelectronic system comprising a transducer and a waveguide
KR20180028328A (en) Semiconductor device, electro-absorption modulator, and optical communication system
Gindera et al. Recent developments in polymer optical fiber (POF) transceivers
CN106772797A (en) A kind of single-chip integration transceiver photoelectric chip and integrated chip array
KR101679475B1 (en) Short pulse light signal generator
Yi et al. Recent Advances of III-nitride Integrated Photonics Technology for Visible Light Applications
WO2022023946A1 (en) White-light illumination and near-infrared communication system and method based on multiple pathway visible-light
Baba Photonic Integration Based on Si Photonics and Photonic Crystals
KR20220046403A (en) Hybrid photonic ring modulators
KR20180075324A (en) Semiconductor device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant