KR101797216B1 - Catalyst Metal Film, Graphene Structure Employing The Same and Manufacturing Method of Graphene Structure - Google Patents
Catalyst Metal Film, Graphene Structure Employing The Same and Manufacturing Method of Graphene Structure Download PDFInfo
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- KR101797216B1 KR101797216B1 KR1020150167503A KR20150167503A KR101797216B1 KR 101797216 B1 KR101797216 B1 KR 101797216B1 KR 1020150167503 A KR1020150167503 A KR 1020150167503A KR 20150167503 A KR20150167503 A KR 20150167503A KR 101797216 B1 KR101797216 B1 KR 101797216B1
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- metal layer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J21/00—Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
- B01J21/06—Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
- B01J21/066—Zirconium or hafnium; Oxides or hydroxides thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/46—Ruthenium, rhodium, osmium or iridium
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/48—Silver or gold
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
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Abstract
A catalyst metal film for graphene synthesis, a graphene structure containing the same, and a method for producing the graphene structure are disclosed. The catalytic metal film according to an embodiment of the present invention includes a first catalytic metal layer including a first metal and a second catalytic metal layer including a second metal different from the first metal on the first catalytic metal layer .
Description
Embodiments of the present invention relate to a catalyst metal film for graphene synthesis, a graphene structure employing the same, and a method of manufacturing a graphene structure.
At present, fullerenes, carbon nanotubes, diamond, graphite, graphene and the like are being studied in various fields as carbon based materials.
Of these, carbon nanotubes have been attracting attention since the 1990s, but in recent years, graphene has attracted much attention. Graphene is a thin-film material in which carbon atoms are arranged two-dimensionally. Since electrons act as zero effective mass particles inside of it, they have a very high electrical conductivity and have high thermal conductivity, elasticity and the like It is known to have.
Therefore, many studies on graphene have been conducted since the study of graphene, and researches are being conducted to utilize it in various fields. In particular, graphene can be applied to wirings of circuit boards, transparent displays or warpable displays, which are essentially installed in electrical and electronic devices.
In order to utilize such graphene in the industrial field, attempts have been actively made to synthesize graphene in a large area. Graphene can be synthesized using chemical vapor deposition (CVD) using a catalytic metal.
Embodiments of the present invention provide a catalyst metal film for graphene synthesis and a method for producing graphene using the same.
The catalyst metal film according to the exemplary embodiment is for graphene synthesis,
A first catalytic metal layer comprising a first metal; And
A second catalyst metal layer including a second metal different from the first metal is coated on the first catalyst metal layer.
The second catalyst metal layer may have a thickness of 1 nm to 5 μm.
The melting point of the second metal may be lower than the melting point of the first metal.
The first catalyst metal layer may contain 99.9% of the first metal.
The first metal may be at least one selected from the group consisting of copper (Cu), nickel (Ni), cobalt (Co), titanium (Ti), platinum (Pt), zirconium (Zr), vanadium (V), rhodium It can be either.
The second metal may be one of silver (Ag), gold (Au), and aluminum (Al).
And a third catalytic metal layer including the second metal below the first catalytic metal layer.
A graphene structure, according to an exemplary embodiment,
A first catalytic metal layer comprising a first metal and a second catalytic metal layer comprising a second metal different from the first metal on the first catalytic metal layer; And
And graphene synthesized on the second catalytic metal layer.
The second catalyst metal layer may have a thickness of 1 nm to 5 μm.
The melting point of the second metal may be lower than the melting point of the first metal.
In a method of manufacturing a graphene structure according to an exemplary embodiment,
Preparing a catalyst metal film having a second catalyst metal layer formed on a first catalyst metal layer including a first metal, the second catalyst metal layer including a second metal different from the first metal; And
Providing a gaseous carbon source to the catalytic metal film, and heating the reaction gas to a reaction temperature to cause graphene to synthesize on the catalytic metal film,
The graphene is formed on the second catalytic metal layer.
The second catalyst metal layer may have a thickness of 1 nm to 5 μm.
The melting point of the second metal may be lower than the melting point of the first metal.
The reaction temperature may be higher than the melting point of the second metal and lower than the melting point of the first metal.
The first catalyst metal layer may contain 99.9% of the first metal.
Other aspects, features, and advantages other than those described above will be apparent from the following detailed description, claims, and drawings.
As described above, the catalyst metal film and the graphene structure including the catalyst metal film according to the present invention can form a graphene layer having a large grain size, so that the quality of graphene can be improved.
Of course, the scope of the present invention is not limited by these effects.
1 is a cross-sectional view illustrating a graphene structure according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a graphene structure according to another embodiment of the present invention.
3A and 3B are schematic cross-sectional views illustrating a method of manufacturing a graphene structure according to embodiments of the present invention.
4A is an image showing the crystal orientation of the Cu / Ag laminated structure catalyst metal film after heat treatment according to an embodiment of the present invention.
4B is an image showing the crystal orientation of the graphene layer of the Cu / Ag / graphene laminated structure according to an embodiment of the present invention.
FIG. 5A is an image showing crystal orientation of a Cu single-layer structure catalyst metal film after heat treatment according to a comparative example of the present invention. FIG.
5B is an image showing the crystal orientation of the graphene layer of the Cu / graphene laminate structure according to the comparative example of the present invention.
Hereinafter, the structure and operation of the graphene transfer method according to the present invention will be described in detail with reference to the accompanying drawings. In the drawings, like reference numerals refer to like elements, and the size and thickness of each element may be exaggerated for clarity of explanation.
It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are not to be construed as limiting for the invention as set forth in the appended claims. And the present invention is only defined by the scope of the claims.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used in the specification, "comprises" and / or "comprising" do not exclude the presence or addition of the stated components, steps, operations, and / or elements. The terms first, second, etc. may be used to describe various elements, but the elements should not be limited by terms. Terms are used only for the purpose of distinguishing one component from another.
In the drawings, components may be exaggerated or reduced in size for convenience of explanation. For example, the size and thickness of each component shown in the drawings are arbitrarily shown for convenience of explanation, and thus the present invention is not necessarily limited to those shown in the drawings.
1 is a cross-sectional view of a
The
The
The larger the grain size, the greater the surface conductivity or mobility of graphene. The size of the grain may vary depending on the type of the
The
Generally, the catalytic metal for synthesizing graphene is made of a metal having a single layer made of a single metal and having high purity.
According to the embodiments of the present invention, the structure in which the first
In order to synthesize the
When the
The second metal of the second
The first
The second
The melting point of the second metal contained in the second
The second
The
Although not shown in the figure, the
2 is a cross-sectional view of a
The
The
The third
The third
The
The upper and lower graphene layers 240 and 260 formed on the upper and lower portions of the
3A and 3B are schematic cross-sectional views for explaining a method of manufacturing the
Referring to FIG. 3A, a first
A pretreatment process may be performed to clean the surface of the first
Referring to FIG. 3B, a
The second
The second
The second
Referring to FIG. 3C, a
When the
The second metal of the second
Although not shown in the figure, the
4A and 4B are graphs showing the crystal structure and the crystal structure of the Cu / Ag / graphene layer after the heat treatment (900 DEG C, 1000 DEG C) of the catalyst metal film having the Cu / Ag laminated structure according to an embodiment of the present invention, respectively to be.
5A and 5B are images showing a crystal structure and a crystal structure of a Cu / graphene layer after a heat treatment (900 ° C, 1000 ° C) of a catalyst metal film composed of a Cu single layer according to a comparative example of the present invention.
Referring to FIGS. 4A and 4B, it can be seen that the catalyst metal film according to the embodiment of the present invention has crystals formed in the (001) direction as a whole, and the graphene layer formed on the catalyst metal film is also crystallized .
On the other hand, referring to FIGS. 5A and 5B, it can be seen that the crystal structure of the catalyst metal film composed of a single layer according to the comparative example of the present invention and the crystal structure of graphene formed thereon show various directions of the crystal.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, is intended to cover various modifications and equivalent arrangements included within the spirit and scope of the invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.
10, 20: catalytic metal film
100, 200: graphene structure
110, 210: first catalyst metal layer
130, 230: a second catalyst metal layer
250: Third catalytic metal layer
140: graphene layer
240: upper graphene layer
260: Lower graphene layer
Claims (15)
A first catalytic metal layer comprising a first metal; And
A second catalyst metal layer comprising a second metal different from the first metal on the first catalyst metal layer;
Wherein the thickness of the first catalytic metal layer is thicker than the thickness of the second catalytic metal layer,
Wherein the second catalytic metal layer has a thickness between 1 nm and 5 um.
Wherein the first catalytic metal layer has a thickness between 5 [mu] m and 75 [mu] m.
Wherein the melting point of the second metal is lower than the melting point of the first metal.
Wherein the first catalyst metal layer contains 99.9% of the first metal.
The first metal may be at least one selected from the group consisting of copper (Cu), nickel (Ni), cobalt (Co), titanium (Ti), platinum (Pt), zirconium (Zr), vanadium (V), rhodium Lt; / RTI >
Wherein the second metal is one of silver (Ag), gold (Au), and aluminum (Al).
And a third catalyst metal layer below the first catalyst metal layer, the third catalyst metal layer including the second metal,
And the third catalytic metal layer has a thickness between 1 nm and 5 um.
And graphene synthesized on the second catalytic metal layer,
Wherein the thickness of the first catalytic metal layer is thicker than the thickness of the second catalytic metal layer,
Wherein the second catalytic metal layer has a thickness between 1 nm and 5 um.
Wherein the first catalytic metal layer has a thickness between 5 um and 75 um.
Wherein the melting point of the second metal is lower than the melting point of the first metal.
Providing a gaseous carbon source to the catalytic metal film, and heating the reaction gas to a reaction temperature to cause graphene to synthesize on the catalytic metal film,
Wherein the graphene is formed on the second catalytic metal layer,
Wherein the thickness of the first catalytic metal layer is thicker than the thickness of the second catalytic metal layer,
Wherein the second catalyst metal layer has a thickness between 1 nm and 5 um.
Wherein the first catalytic metal layer has a thickness between 5 um and 75 um.
Wherein the melting point of the second metal is lower than the melting point of the first metal.
Wherein the reaction temperature is higher than a melting point of the second metal and lower than a melting point of the first metal.
Wherein the first catalyst metal layer contains 99.9% of the first metal.
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