KR101794549B1 - Tip structure of electrical resonance mode scanning probe microspoe for large-area image obtaining and the manufacturing method of this - Google Patents

Abstract

The present invention relates to a tip structure of an electro-resonant mode scanning probe microscope for large area image acquisition, which enables the acquisition of a large-area surface image, including a tip array in which a plurality of probes are arranged in a capacitor forming a plurality of layers, And a manufacturing method thereof.

Description

TECHNICAL FIELD [0001] The present invention relates to a tip structure of an electric resonance mode scanning probe microscope for acquiring a large area image, and a method of manufacturing the tip structure.

The present invention relates to a tip structure of an electric resonance mode scanning probe microscope for obtaining a large area image and a method of manufacturing the same, and more particularly, to an electric resonance mode scanning probe for large area image acquisition, To a tip structure of a microscope and a manufacturing method thereof.

A high-speed scanning probe microscope using an eddy current measurement method "of Patent No. 10-1133932 and an atomic force microscope as described in" A scanning probe microscope and its driving method "of Japanese Patent Laid-Open No. 10-2014-0147589, AFM) is a technique for imaging a surface topography using one probe consisting of a cantilever and a tip.

The surface topography can be roughly divided into contact mode and non-contact mode.

First, in the contact-type method, the change of the amplitude in the state of mechanical vibration can be quantitatively obtained by the optical system by the deflection of the probe. In the non-contact type method, based on this principle, An area of several tens of 탆 ² can be imaged at one time.

Advances in atomic force microscopy techniques have developed techniques for analyzing the electrical, magnetic, and mechanical properties of surfaces beyond imaging the surface topography.

In addition, since nano patterning technology using scanning probes first appeared in IBM, patterning technology for scanning probe microscopy has also been developed.

Atomic force microscopy is a technology that is very meaningful and expanding in terms of research but it is classified as a technology that is increasingly difficult to use from an industrial point of view.

Because the atomic force microscope uses a single probe, there is a speed limit to image or pattern only the area of up to several tens of μm 2.

In order to overcome these limitations, large area imaging technology using conventional cantilever / tip structure was promoted in the early 2000s mainly at Stanford University and IBM.

In 2000, the IBM research team produced 1,024 probes, showing the potential of large area surface imaging technology, but it was not successfully developed in terms of both technical and cost.

Recently, studies have been made to increase the throughput by increasing the scan speed of the probe, but it is difficult to image the surface topography of several cm ² by merely increasing the scan speed.

On the other hand, many successful research results have been reported in the patterning technique, in which a technique in which a plurality of tips for large-scale lithography have parallelism is developed.

The present inventors have also succeeded in developing a cantilever-free silicon tip array technology ( Nature , 469 , 516, 2011).

Patterning has overcome the limitations of speed with a new technological approach, but in the case of imaging technology, there is no paradigm shift to fundamentally solve it.

Patent No. 10-1133932 Published Japanese Patent Application No. 10-2014-0147589

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a capacitor; And a tip array composed of a plurality of probes arranged on the capacitor. The tip structure of the resonance mode scanning probe microscope for obtaining a large area image can be provided.

Wherein the tip array induces a change in capacitance due to surface topography.

Here, the capacitor includes a first electrode layer, a dielectric layer formed on the first electrode layer, and a second electrode layer formed on the dielectric layer, and the tip array is arranged on the second electrode layer do.

The dielectric forming the dielectric layer is an elastomer.

The first electrode layer, the dielectric layer, and the second electrode layer may have the same or different thicknesses.

On the other hand, the present invention comprises a tip array forming a constant area and recognizing the surface topography, wherein the tip array images the surface with a capacitance change, the electrical resonance mode scan The tip structure of the probe microscope may be provided.

The present invention also provides a method of manufacturing a capacitor, comprising: a first step of fabricating a capacitor forming a plurality of layers; And a second step of arranging a plurality of probes on the capacitor to form a tip array. It is of course possible to provide a method of manufacturing a tip structure of an electric resonance mode scanning probe microscope for acquiring a large area image to be.

The first step may include forming a first electrode layer having a predetermined thickness by vacuum evaporation of a metallic material, forming a dielectric layer having a predetermined thickness from the elastomer as a dielectric on the first electrode layer, And forming a second electrode layer having a predetermined thickness by vacuum depositing a metal material on the dielectric layer, wherein the tip array is formed on the second electrode layer after the second electrode layer is formed.

Here, the first electrode layer, the dielectric layer, and the second electrode layer may have the same or different thickness.

The dielectric forming the dielectric layer is an elastomer.

The spring constant of the elastomer is 1 N / m or less.

The first electrode layer and the second electrode layer are formed by vacuum deposition of the metallic material.

The first electrode layer and the second electrode layer are formed by vacuum thermal deposition of gold to a predetermined thickness.

The first electrode layer may be formed by vacuum depositing chromium to a thickness of 1 to 10 nm on a glass substrate and subjecting the chromium to vacuum thermal deposition of gold to a thickness of 50 to 200 nm, And the dielectric layer is formed by spin coating on gold.

The second electrode layer may be formed by vacuum depositing chromium to a thickness of 1 to 10 nm on the dielectric layer and subjecting the chromium to vacuum thermal deposition of gold to a thickness of 50 to 200 nm, And is formed on the gold.

The second step may include forming a silicon layer on the capacitor, disposing a soft stamp having a cavity having a shape corresponding to the plurality of probes so as to face the silicon layer, And the plurality of probes are formed by supplying an etchant and performing wet etching.

According to the present invention having the above-described configuration, the following effects can be achieved.

First, the present invention makes it possible to acquire a large-area surface image in comparison with an atomic force microscope consisting of a conventional cantilever and a tip, from an embodiment including a tip array in which a plurality of probes are arranged in a capacitor forming a plurality of layers .

Particularly, the present invention can obtain a surface image by cooperating with a tip array in which a cantilever is eliminated and a plurality of probes are arranged in a capacitor in comparison with a conventional atomic force microscope, It will be possible to obtain a clear and accurate surface image.

1 is a conceptual view showing a tip structure of an electro-resonant mode scanning probe microscope for acquiring a large-area image according to an embodiment of the present invention;
2 is a flowchart illustrating a method of manufacturing a tip structure of an electric resonance mode scanning probe microscope for obtaining a large area image according to an embodiment of the present invention
3 to 6 are conceptual diagrams sequentially illustrating a method of manufacturing a tip structure of an electric resonance mode scanning probe microscope for obtaining a large area image according to an embodiment of the present invention
FIG. 7 is an electron micrograph of a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition according to an embodiment of the present invention
FIG. 8 is a conceptual diagram of a resonance circuit fabricated for sensing a capacitance change of a capacitor 100, which is a main part of a tip structure of an electric resonance mode scanning probe microscope for obtaining a large area image according to an embodiment of the present invention.
9 is a graph showing the spring coefficient and the Young's modulus of the dielectric layer among the capacitors which are the main part of the tip structure of the resonance mode scanning probe microscope for large area image acquisition according to the embodiment of the present invention
FIG. 10 is a graph showing a graph of values measured by connecting a capacitor, which is a main part of a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition according to an embodiment of the present invention,

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and features of the present invention, and how to accomplish them, will become apparent by reference to the embodiments described in detail below with reference to the accompanying drawings.

However, the present invention is not limited to the embodiments described below, but may be embodied in various other forms.

The present embodiments are provided so that the disclosure of the present invention is thoroughly disclosed and that those skilled in the art will fully understand the scope of the present invention.

And the present invention is only defined by the scope of the claims.

Thus, in some embodiments, well known components, well known operations, and well-known techniques are not specifically described to avoid an undesirable interpretation of the present invention.

In addition, throughout the specification, like reference numerals refer to like elements, and the terms (mentioned) used herein are intended to illustrate the embodiments and not to limit the invention.

In this specification, the singular forms include plural forms unless the context clearly dictates otherwise, and the constituents and acts referred to as " comprising (or comprising) " do not exclude the presence or addition of one or more other constituents and actions .

Unless defined otherwise, all terms (including technical and scientific terms) used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs.

Also, commonly used predefined terms are not ideally or excessively interpreted unless they are defined.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

1 is a conceptual view showing a tip structure of an electric resonance mode scanning probe microscope for acquiring a large area image according to an embodiment of the present invention.

FIG. 2 is a flowchart illustrating a method of manufacturing a tip structure of an electro-resonant mode scanning probe microscope for acquiring a large-area image according to an embodiment of the present invention. FIGS. 3 to 6 illustrate an embodiment of the present invention FIG. 3 is a conceptual diagram illustrating a method of manufacturing a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition according to an embodiment of the present invention.

7 is an electron micrograph of a tip structure of an electric resonance mode scanning probe microscope for obtaining a large area image according to an embodiment of the present invention.

FIG. 8 is a conceptual diagram of a resonance circuit fabricated for sensing a capacitance change of a capacitor 100, which is a main part of a tip structure of an electric resonance mode scanning probe microscope for acquiring a large area image according to an embodiment of the present invention.

9 is a graph showing the spring coefficient and the zero coefficient of the dielectric layer 130 of the capacitor 100, which is the main part of the tip structure of the resonance mode scanning probe microscope for obtaining a large area image according to an embodiment of the present invention.

10 is a graph showing a graph of values measured by connecting a capacitor, which is a main part of a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition according to an embodiment of the present invention, to a resonance circuit.

As shown in FIG. 1, the present invention includes a tip array 200 that forms a certain area and induces a change in capacitance due to surface topography.

The tip array 200 is formed of a plurality of probes 201 arranged on a capacitor 100 capable of changing a capacitance and is configured to image the surface by a change in capacitance induced in the tip array 200 do.

In other words, the imaging of the surface is effected by the capacitance change of the capacitor 100.

Therefore, the present invention can acquire a surface image of a large area as compared with an atomic force microscope comprising a conventional cantilever and a tip.

Particularly, the present invention can obtain a surface image by cooperating with a tip array in which a cantilever is eliminated and a plurality of probes are arranged in a capacitor in comparison with a conventional atomic force microscope, It will be possible to obtain a clear and accurate surface image.

It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or scope of the invention.

First, the capacitor 100 includes a first electrode layer 110, a dielectric layer 130 formed on the first electrode layer 110, and a second electrode layer 120 formed on the dielectric layer 130.

Here, it can be seen that the tip array 200 is arranged on the second electrode layer 120.

At this time, the first electrode layer 110 may be formed on the glass substrate 300.

The dielectric forming the dielectric layer 130 may be an elastomer, and the elastomer preferably has a spring coefficient of 1 N / m or less.

In addition, since the spring coefficient of the elastomer is proportional to the Young's modulus, the biodegradable synthetic resin such as the ecoflex having a Young's modulus much smaller than that of the PDMS, compared with the existing technology using PDMS as the elastomer having a large Young's modulus .

The first electrode layer 110, the dielectric layer 130, and the second electrode layer 120 may have the same or different thicknesses.

Accordingly, when any of the probes 201 constituting the tip array 200 arranged on the second electrode layer 120 is pressed, the thickness of the dielectric layer 130 is changed , And the surface topography is imaged using the capacitance change at this time.

3 through 6, the present invention includes a first step S1 of fabricating a capacitor 100 forming a plurality of layers, a second step S1 of forming a plurality of probes 201 on the capacitor 100, And a second step (S2) of arranging the tip array (200).

The first step S1 includes the steps of forming a first electrode layer 110 having a predetermined thickness by vacuum evaporation of a metal material and forming a second electrode layer 110 having a predetermined thickness A process of forming the dielectric layer 130 and a process of vacuum depositing a metal material on the dielectric layer 130 to form the second electrode layer 120 having a predetermined thickness.

At this time, the tip array 200 may be formed on the second electrode layer 120 after the second electrode layer 120 is formed.

The first electrode layer 110 may be formed on the glass substrate 300 as described above and the first electrode layer 110 and the dielectric layer 130 and the second electrode layer 120 may have the same or different thicknesses.

The first electrode layer 110 and the second electrode layer 120 may be formed by vacuum evaporation of a metal material. Specifically, the first electrode layer 110 and the second electrode layer 120 may be formed by vacuum thermal deposition of gold to a predetermined thickness.

As shown in FIG. 3, the first electrode layer 110 may be formed by vacuum-depositing chromium in a thickness of 1 to 10 nm on a glass substrate 300 by vacuum thermal evaporation and depositing gold in a thickness of 50 to 200 nm on chromium have.

The dielectric layer 130 made of an elastomer may be formed by spin coating on gold as shown in FIG.

Here, the spin coating was carried out at 100 rpm for 30 seconds, and the spin-coated elastomer was cured at room temperature for 24 hours to form a dielectric layer.

5, the second electrode layer 120 may be formed by vacuum-depositing chromium in a thickness of 1 to 10 nm on the dielectric layer 130 by vacuum thermal evaporation and depositing gold in a thickness of 50 to 200 nm on chromium by vacuum thermal deposition.

Thereafter, the tip array 200 made of a probe made of a silicon material is formed as shown in FIG. 6 on gold through wet etching using a KOH etchant in a conventional manner ( Nature , 469 , 516, 2011).

Accordingly, the present invention enables the capacitor 100 in which the tip array 200 is arranged to be formed in the form of an electrode / dielectric / electrode as a whole through the first step S1 as described above, thereby realizing a high-sensitivity capacitor.

The capacitance, which is changed by the surface topography, can be detected through a resonant circuit to be described later to obtain a large-sized surface image.

The spring constant of the dielectric layer 130 of the manufactured capacitor 100 was measured in the following manner.

In the present invention, large-area imaging is implemented in a manner similar to that of a conventional atomic force microscope.

A contact-type atomic force microscope usually obtains a surface topography using a cantilever with a spring coefficient of 1 N / m or less.

The above-mentioned spring coefficient of 1 N / m or less is an essential condition for the warping of the cantilever to be sensitive to surface changes and not to damage the sample surface at the time of contact.

The dielectric layer 130, which is an elastomer, replaces the role of a cantilever in the probe structure. Therefore, in the structure of the present invention without the cantilever, the spring coefficient of the dielectric layer 130 is adjusted to 1 N / m or less.

The spring coefficient of the elastomer is proportional to the Young's modulus ( Nano Lett. , 16 (9) , 1666).

The conventional tip structure is difficult to have a spring coefficient of 1 N / m or less by using PDMS having a large Young's modulus as an elastic polymer.

In order to solve this problem, the tip array 200 is fabricated using ecoflex having a much smaller zero coefficient than PDMS.

The spring coefficient was measured using an atomic force microscope (XE-150 ppl, Park Systems).

The tip array 200 was indentated using a cantilever-only probe (TL-CONT, Nanosensors) and the change in position-sensitive photodiode (PSPD) signal was measured.

The signal changes were converted into spring coefficients in two ways (see (a) and (b) below).

(a) In the first method, the photodiode signal of the atomic force microscope was converted into a force to obtain a spring coefficient.

이다.The force when indented by a cantilever in an atomic force microscope

to be.

는 캔틸레버의 휘어짐 정도이고,

는 캔틸레버의 스프링 계수이다.here,

Is the degree of bending of the cantilever,

Is the spring coefficient of the cantilever.

로 구할 수 있으며,

는 포토다이오드에서 읽어내는 전압 변화량이고,

는 민감도(sensitivity)로 특정 포토다이오드 신호 변화가 나타나기 위해서 실제로 캔틸레버가 변형된 길이다.At this time,

And,

Is a voltage variation amount read from the photodiode,

Is a path where the cantilever is actually deformed to show a certain photodiode signal change due to its sensitivity.

Sensitivity can be determined by the slope of the graph of the voltage change when a hard sample is pressed by the AFM.

임을 알 수 있다.Further, when the force is calculated in the entire system

.

Since both the cantilever and the tip structure are springs, the force applied is also in accordance with Hooke's law.

)로 나타낼 수 있으며, 시스템의 변형은 원자힘 현미경의 스캐너의 이동거리에 대응된다.The obtained force is the spring coefficient of the system

), And the deformation of the system corresponds to the moving distance of the scanner of the atomic force microscope.

Therefore, the spring coefficient of the tip structure can be obtained using the two equations.

(b) The second method is to directly convert the signal into a spring coefficient without converting the signal to force.

To do this, two successive indentation experiments must be performed.

The first indentation measures the change in voltage as it is pressed against a hard surface (silicon) with a cantilever.

을 눌리는 표면의 스프링 계수라고 정의하고,

를 캔틸레버의 스프링 계수라고 하면, 첫 번째 실험에서 측정되는 시스템의 스프링 계수는

이기 때문에

이다.

Is defined as the spring coefficient of the surface to be pressed,

And the spring coefficient of the cantilever, the spring coefficient of the system measured in the first experiment is

Because

to be.

The second indentation is to press the tip structure to be measured with the cantilever and measure the spring coefficient.

이며, 측정되는 전압 변화는

이고 캔틸레버의 변형은

이다.The spring coefficient measured at the second indentation is

, And the measured voltage change is

And the deformation of the cantilever

to be.

이고, 두 번째 실험에서는

임을 알 수 있다.Applying this, the voltage change in the first experiment

, And in the second experiment

.

Here, the variable D is the same as the variable S described above, and indicates the degree of signal change of the photodiode when the cantilever is bent.

로 구할 수 있다.The spring constant of the tip structure to be obtained is given by

.

The atomic force microscope generally detects the attraction and repulsion between the probe and the atoms present on the surface of the sample to obtain the surface topography.

The change in attraction and repulsion can be obtained by optical signal change of the degree of bending of the cantilever, and the optical signal can be quantified by using a photodiode as described above.

In the present invention, since a structure having no cantilever is used, another type of surface topography imaging technology is required. Therefore, in order to obtain a surface topography by using the capacitance change of the high-sensitivity capacitor 100 manufactured by the above- do.

) 근처에서 기계적으로 진동되는 상태로 구동되는데, 캔틸레버가 표면 근처에서는 표면 원자의 인력 및 척력에 의하여 유효스프링 계수(

, effective spring constant)가 변화한다.Surface imaging technology using cantilevers generally uses mechanical vibration, while cantilevers use resonance frequency

The cantilever is driven near the surface by the attraction force of the surface atoms and the repulsive force,

, effective spring constant) changes.

Therefore, the resonant frequency is also shifted and oscillated at a different amplitude from the first.

Here, the change in amplitude is quantified as an optical signal and converted into a surface topography.

The structure including the capacitor 100 without a cantilever and the tip array 200 according to an embodiment of the present invention also simulates the vibration structure.

) 근처에서 인가하며, 인덕터(1008LS-104XJL, Coilcraft)는 고정한 상태에서 커패시터(100)에 의해서 정전용량의 변화면 공진주파수가 옮겨지고, 이에 따라 전압의 진폭이 변한다.The electrical signal is the resonant frequency (

And the inductor (1008LS-104XJL, Coilcraft) is fixed, the resonance frequency of the change surface of the capacitance is shifted by the capacitor 100, and the amplitude of the voltage is changed accordingly.

The change in amplitude was measured with a voltmeter (Agilent 33220A, Agilent).

At this time, the tip structure manufactured by the above-described manufacturing method is connected to an external inductor to constitute an LC element.

Next, in order to detect the change in the height of the surface topography, the capacitance change must be detected.

The change in the capacitance to be sensed is several tens of femtofertes, which is a problem that requires a measurement time of several tens of seconds when it is measured with a commercially available LCR meter.

Therefore, the high-precision and high-accuracy measurement of the resonance circuit 400 is performed in a manner that the reflection coefficient of the LC resonance circuit changes exponentially with the minute capacitance change. And the high speed measurement is because the final speed is determined by the low pass filter of the circuit.

The oscillator 410 (AFG 3252C function generator, Tektronix) applies a radio frequency (RF) having a frequency of 1 to 240 MHz to the fabricated LC device.

An RF mixer (420, ZP-3MH +, Mini-circuit) was used as a standard frequency of the mixer by using an RF power splitter and RF having the same frequency as the oscillator.

The RF power applied from the oscillator 410 is injected into the resonant circuit 400 using a directional coupler 430, ZEDC-15-2B, Mini-circuit.

The directional coupler 430 divides the input power and the power reflected by the LC element into different cables. In the measuring unit 440, only the change in the reflected power can be sensitively measured without noise due to the change of the input unit .

이다.A part of the incident RF power is reflected according to the impedance of the device.

to be.

는 반사계수, Z는 소자의 임피던스,

는 특성임피던스(50Ω)를 각각 나타낸다.here,

Is the reflection coefficient, Z is the impedance of the element,

Represents a characteristic impedance (50?).

In general, since the capacitance of the femtoplekt has a very high impedance in the RF frequency domain, the reflection coefficient converges to 1, so that a sensitive measurement is impossible.

에 가까운 값으로 변환된다.However, by adding an external inductor 450, the impedance of the device at a particular frequency

Quot ;.

At this time, the reflected RF power is transmitted to the RF mixer 420 and is modulated by DC power. The RF power is multiplied by the frequency of the oscillator 410 and the reflected power to generate a low-pass filter 460 (BLP-1.9 +, Mini-circuit) , A DC voltage signal proportional to the RF power was obtained.

Next, prior to measuring the spring constant of the tip structure, the experiment to check the Young's modulus of the Ecoflex product was given priority.

The Young's modulus was measured by nanoindentation with Ecoflex gel, Ecoflex-0010, Ecoflex-0020 and Ecoflex-0050.

PDMS was also measured for relative comparison, and it was confirmed that the Young's modulus of Ecoflex was 2 to 10 times lower than that of PDMS as shown in FIG.

Based on the identified Young's modulus, the spring coefficient of the dielectric layer 130 of the capacitor 100 made of an elastomer was measured.

The spring coefficient of the dielectric layer 130 was measured by mounting a tipless cantilever (TL-CONT, Nanosensors) on an AFM (XE-150 ppl, Park systems).

The spring coefficient of the cantilever was 0.2 N / m and the sensitivity S was found to be 8.765 V / μm.

More than ten arbitrary probes 201 selected from the plurality of probes 201 arranged on the capacitor 100 were selected and the spring coefficients were measured.

All of the probes 201 proceeded under the same force so that they proceed under the same experimental conditions. Even if the probe 201 was pressed again, there was no difference in the experimental results.

Under these conditions, it was confirmed that the spring coefficient of the capacitor 100 and the tip array 200 using the ecoflex, which is an elastomer, was adjusted to 1 N / m or less.

9, the spring coefficient of the dielectric layer 130 using Ecoflex gel is 0.65 to 0.67 N / m, Ecoflex-0010 is 0.69 N / m, Ecoflex-0020 is 0.85 N / m and Ecoflex- m. < / RTI >

Since the spring coefficient of the dielectric layer 130 using all types of ecoflex is less than 1 N / m and both measurement equations are almost the same, both methods are valid measurement methods.

Thus, it can be seen that the capacitor 100 of the present invention can have a sensitivity similar to that of a contact atomic force microscope.

The capacitor 100 and the tip array 200 using Ecoflex as the dielectric layer 130 were connected to the resonance circuit mounted on the AFM.

10 is a graph showing a measured value of a capacitor 100, which is a main part of a tip structure of an electrical resonance mode scanning probe microscope for acquiring a large area image, connected to a resonance circuit, according to an embodiment of the present invention. 10 (a) is a graph showing changes in the resonance frequency depending on the measured pressure in connection with the resonance circuit, and FIG. 10 (b) is a graph showing changes in the pressure value detected at the fixed applied frequency.

In order to confirm the resonance frequency of the fabricated LC device, the resonance frequency was confirmed using a frequnecy sweep in the range of 1 to 240 MHz as shown in FIG. 10 (a).

As the pressure increases, the capacitance increases and the resonant frequency shifts to the left.

It was confirmed that the fabricated LC element had a resonance frequency at 47.5 MHz, and the applied frequency was 50 MHz.

The signal changes when the pressure is fixed with the frequency fixed at 50 MHz is measured. It is confirmed that the signal change according to the increasing pressure changes by tens of mV as shown in FIG. 10 (b), and the sensitive measurement is possible.

For more precise measurements, a higher Q factor should be implemented.

This is because, in order to minimize the capacitance and the electric resistance of the circuit, finally, an on-chip type resonance circuit integrated with all elements must be fabricated.

In addition, it is also required to implement a multiplexing technique for measuring a plurality of probes 201 simultaneously.

For the multiplexing technique, the principle of adjusting the resonance frequency of each of the plurality of probes 201 by changing the value of the inductor used is used.

When there are a plurality of probes 201 having different resonance frequencies, a plurality of probes 201 can be simultaneously driven by applying RF power using a multitone oscillator or an arbitrary waveform output generator.

By using this principle, signals of a plurality of probes 201 can be measured beyond the measurement of the single probe 201, thereby making it possible to form a large-area surface topography image.

Therefore, the present inventors confirmed that the spring coefficient of the tip structure using the ecoflex was adjusted to 1 N / m or less.

We succeeded in fabricating a tip structure with a spring coefficient of 0.6 to 0.9 N / m depending on the type of Ecoflex.

The change in the capacitance of the tip structure due to the pressure was measured using the same, and the change in capacitance was several tens of femtofoters, so that a resonance circuit was designed to detect the capacitance.

It was confirmed that the voltage change due to the pressure was measured using the designed resonance circuit, and the imaging through the capacitance change was possible.

In order to realize large-area imaging, it is essential to implement a resonant circuit and a multiplexing technique with improved Q factor.

As described above, it is understood that the present invention provides a tip structure of an electric resonance mode scanning probe microscope for large area image acquisition and a method of manufacturing the same, which enables a surface image of a large area to be obtained.

It will be apparent to those skilled in the art that many other modifications and applications are possible within the scope of the basic technical idea of the present invention.

100 ... capacitors
110 ... first electrode layer
120 ... second electrode layer
130 ... dielectric layer
200 ... tip array
201 ... multiple probes
300 ... glass substrate
400 ... resonance circuit
410 ... Oscillator
420 ... RF mixer
430 ... directional coupler
440 ... measuring part
450 ... external inductor
460 ... low pass filter
S1 ... Step 1
S2 ... Step 2

Claims (15)

A capacitor including a first electrode layer; And
And a tip array of a plurality of probes arranged on the capacitor,
The tip array induces a change in the capacitance due to surface topography,
Wherein the first electrode layer is formed by vacuum depositing chromium by 1 to 10 nm thick on a glass substrate and subjecting the chromium to vacuum thermal deposition of gold to a thickness of 50 to 200 nm, The tip structure of a scanning probe microscope.
delete The method according to claim 1,
The capacitor
A dielectric layer formed on the first electrode layer,
And a second electrode layer formed on the dielectric layer,
Wherein the tip array is arranged on the second electrode layer. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 3,
Characterized in that the dielectric forming the dielectric layer is an elastomer. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 3,
Wherein the first electrode layer, the dielectric layer, and the second electrode layer are the same or different thicknesses. ≪ RTI ID = 0.0 > 11. < / RTI >
delete A first step of forming a first electrode layer having a predetermined thickness by vacuum evaporating a metal material to fabricate a capacitor forming a plurality of layers; And
And a second step of arranging a plurality of probes on the capacitor to form a tip array,
Wherein the first electrode layer is formed by vacuum depositing chromium by 1 to 10 nm thick on a glass substrate and subjecting the chromium to vacuum thermal deposition of gold to a thickness of 50 to 200 nm, Method of manufacturing a tip structure of a scanning probe microscope.
The method of claim 7,
In the first step,
Forming a dielectric layer having a predetermined thickness on the first electrode layer using an elastomer as a dielectric;
Depositing a metal material on the dielectric layer by vacuum thermal deposition to form a second electrode layer having a predetermined thickness,
Wherein the tip array is formed on the second electrode layer after the second electrode layer is formed. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 8,
Wherein the first electrode layer, the dielectric layer, and the second electrode layer are formed to have the same or different thicknesses. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 8,
Wherein the dielectric forming the dielectric layer is an elastomer. ≪ Desc / Clms Page number 20 >
The method of claim 10,
Wherein the elastomer has a spring coefficient of 1 N / m or less. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 8,
Wherein the first electrode layer and the second electrode layer are formed by vacuum evaporation of the metal material.
The method of claim 8,
Wherein the first electrode layer and the second electrode layer are formed by vacuum thermal deposition of a predetermined thickness of gold. The method of claim 1, wherein the first electrode layer and the second electrode layer are formed by vacuum thermal evaporation.
The method of claim 8,
Wherein the elastomer is spin-coated on the gold to form the dielectric layer. ≪ RTI ID = 0.0 > 11. < / RTI >
The method of claim 8,
And the second electrode layer
Depositing chromium in a thickness of 1 to 10 nm on the dielectric layer by vacuum thermal deposition;
And vacuum depositing gold on the chromium to a thickness of 50 to 200 nm,
Wherein the tip array is formed on the gold. ≪ RTI ID = 0.0 > 11. < / RTI >

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