KR101784558B1 - Semiconductor TCA Sensor and Sensor Device Using the Same - Google Patents

Semiconductor TCA Sensor and Sensor Device Using the Same Download PDF

Info

Publication number
KR101784558B1
KR101784558B1 KR1020150113910A KR20150113910A KR101784558B1 KR 101784558 B1 KR101784558 B1 KR 101784558B1 KR 1020150113910 A KR1020150113910 A KR 1020150113910A KR 20150113910 A KR20150113910 A KR 20150113910A KR 101784558 B1 KR101784558 B1 KR 101784558B1
Authority
KR
South Korea
Prior art keywords
tca
sensing
channel layer
semiconductor sensor
current
Prior art date
Application number
KR1020150113910A
Other languages
Korean (ko)
Other versions
KR20170019716A (en
Inventor
김형준
우황제
박규남
박주상
고경용
Original Assignee
연세대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 연세대학교 산학협력단 filed Critical 연세대학교 산학협력단
Priority to KR1020150113910A priority Critical patent/KR101784558B1/en
Publication of KR20170019716A publication Critical patent/KR20170019716A/en
Application granted granted Critical
Publication of KR101784558B1 publication Critical patent/KR101784558B1/en

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4073—Composition or fabrication of the solid electrolyte
    • G01N27/4074—Composition or fabrication of the solid electrolyte for detection of gases other than oxygen
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/406—Cells and probes with solid electrolytes
    • G01N27/407—Cells and probes with solid electrolytes for investigating or analysing gases
    • G01N27/4075—Composition or fabrication of the electrodes and coatings thereon, e.g. catalysts
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/0004—Gaseous mixtures, e.g. polluted air
    • G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
    • G01N33/0027—General constructional details of gas analysers, e.g. portable test equipment concerning the detector
    • G01N33/0036—General constructional details of gas analysers, e.g. portable test equipment concerning the detector specially adapted to detect a particular component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Molecular Biology (AREA)
  • Engineering & Computer Science (AREA)
  • Combustion & Propulsion (AREA)
  • Food Science & Technology (AREA)
  • Medicinal Chemistry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

A technology relating to a semiconductor sensor for sensing TCA gas and a sensor device using the same is disclosed. A semiconductor sensor for sensing the disclosed TCA gas comprises: a substrate; A TCA sensing channel layer formed on the substrate and made of a metal oxide or a dichalcogenide compound; And an electrode, wherein an amount of current of the TCA sensing channel layer varies according to a reaction between the TCA sensing channel layer and TCA (Trichloroanisole).

Description

Technical Field [0001] The present invention relates to a semiconductor sensor for sensing a TCA,

The present invention relates to a semiconductor sensor and a sensor device using the same, and more particularly, to a semiconductor sensor for sensing a TCA and a sensor device using the semiconductor sensor.

Over the past several years, the global wine industry has continued to grow steadily, and it is expected that the Chinese will continue to grow more steeply due to the growing popularity of wine. Worldwide, the size of the wine supply market reaches 20 trillion won annually.

However, a considerable number of wines are deteriorated in the storage process from the manufacturing process to the sale. It is expected that the taste will be changed with the wine having a size exceeding 10% of the produced wine. The phenomenon of taste deterioration is due to the formation of a substance called trichloroanisole or TCA by the cork used in the cap of the wine bottle. As shown in Fig. 1, The chlorine (Cl) component, the microorganism propagating in the cork, and the phenolic component contained in the wine react to form TCA.

Due to the strong irritant flavor of TCA, wine can not be consumed by being unable to take other incense in the wine, which is called Bouchonne phenomenon, or Bouchone phenomenon. It is estimated that the loss of wine by the return of wine caused by the phenomenon of Bousshene is estimated to reach 2 trillion won per annum worldwide.

In order to solve the Bauchoness phenomenon, research to detect TCAs in advance has been conducted for the past decade. Most of these studies are chromatographic methods for analyzing the components of a substance using the difference in solute migration speed in a solvent, and other detection techniques have hardly been studied.

Chromatographic analysis requires the use of large-scale measurement equipment, the long preparation time and complexity required in sample preparation, and the large space required for measurement. This limited measurement environment is not applicable to the actual wine industry because it is impossible to apply more than simple measurement for research purposes due to difficulty of measurement itself and difficulty in analyzing measurement results. In addition, there is a problem that it is difficult to implement an electronic device for measuring the Bouchone phenomenon by applying it to an electronic device, or to detect in advance a wine having a Bouchone phenomenon in a restaurant.

The present invention provides a semiconductor sensor for sensing a TCA and a sensor device using the semiconductor sensor.

Particularly, the present invention is to provide a semiconductor sensor capable of detecting the presence or absence of a Bouchone phenomenon by sensing the TCA and a sensor device using the same.

According to an aspect of the present invention, there is provided a plasma display panel comprising: a substrate; A TCA sensing channel layer formed on the substrate and made of a metal oxide semiconductor or a dichalcogenide compound; And an electrode, wherein the amount of current of the TCA sensing channel layer provides a semiconductor sensor that senses TCA gas that changes according to the reaction of the TCA sensing channel layer and TCA (Trichloroanisole).

According to another aspect of the present invention, there is provided a semiconductor sensor including a TCA sensing channel layer made of a metal oxide semiconductor or a dichalcogenide compound. A voltage applying unit for applying a voltage to the semiconductor sensor; And a current measuring unit for measuring a current of the semiconductor sensor, wherein the amount of current of the TCA sensing channel layer is a sensor device for sensing TCA gas which changes according to a reaction between the TCA sensing channel layer and TCA (Trichloroanisole) .

According to the present invention, the TCA gas can be detected by using the current change of the channel layer made of the metal oxide or the dikalochenanide compound.

Further, according to the present invention, TCA gas can be repeatedly detected without replacing the sensor.

1 is a view showing a process of forming a TCA.
2 is a view for explaining a semiconductor sensor for sensing a TCA according to an embodiment of the present invention.
3 is a view for explaining a semiconductor sensor for sensing a TCA according to another embodiment of the present invention.
4 is a view for explaining TCA detection results of a semiconductor sensor including a TCA sensing channel layer made of ZnO among metal oxides.
FIG. 5 is a view for explaining a TCA detection result of a semiconductor sensor including a TCA sensing channel layer made of WSe 2 in a decalcogenide compound. FIG.
6 is a view for explaining a sensor device for sensing a TCA according to an embodiment of the present invention.
7 is a view for explaining a sensor device for detecting a TCA according to another embodiment of the present invention.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. It should be understood, however, that the invention is not intended to be limited to the particular embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

The present invention provides a semiconductor sensor capable of sensing TCA gas. Unlike chromatographic analysis, a technique for detecting a gas using a semiconductor sensor uses a current change caused by a concentration change of a gas to be sensed.

Due to the characteristics of the semiconductor device, the semiconductor sensor can be manufactured in a very small size, and the gas can be sensed without special preparation for sensing or special equipment. Therefore, the sensor device mounting the semiconductor sensor can also be manufactured in a small size. For example, the semiconductor sensor according to the present invention can be mounted on a smartphone and can detect the Bauhorn phenomenon.

The semiconductor sensor for detecting TCA gas according to the present invention detects TCA gas using a TCA sensing channel layer made of a metal oxide or a dichalcogenide compound. When the TCA sensing channel layer reacts with the TCA gas, the amount of current flowing through the TCA sensing channel layer changes, and the present invention can detect the TCA gas using the amount of current flowing through the TCA sensing channel layer.

One of the two-dimensional materials such as graphene is a compound containing two chalcogen atoms, which is composed of a dicarcogenide having an octahedral structure centered on a metal ion, There is a dicarcogenide having a trigonal prismatic structure in its cross-section. Dicarcogenide compounds are characterized by their ability to be deposited as a single atomic layer because they have very strong binding forces through covalent bonds between atoms within a layer.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 2 is a view for explaining a semiconductor sensor for sensing a TCA according to an embodiment of the present invention. Particularly, FIG. 2 (b) is a sectional view taken along the dashed line (a) .

2, the semiconductor sensor 200 for sensing a TCA according to the present invention includes a substrate 230, a TCA sensing channel layer 210, and electrodes 221 and 223.

A TCA sensing channel layer 210 is deposited on the substrate 230. Substrate 230 may be a SiO 2 substrate in one embodiment, but not limited thereto, the substrate 230 may be a glass substrate for a silicon substrate, a GaAs substrate, a silicon germanium substrate, a ceramic substrate, a quartz substrate, or a display .

The TCA sensing channel layer 210 is formed on the substrate 230 and is made of a metal oxide or a dicarcogenide compound. A metal oxide or a dicarcogenide compound may be deposited over the substrate 230 through an ALD process.

Metal oxides are, in one embodiment SnO2, TiO2, ZnO, CuO, NiO, CoO, In2O3, WO 3, MgO, CaO, La 2 O 3, Nd 2 O 3, Y 2 O 3, CeO 2, PbO, ZrO 2 , Fe 2 O 3 , Bi 2 O 3 , V 2 O 5 , VO 2 , Nb 2 O 5 , Co 3 O 4 and Al 2 O 3 . And the dicarcogenide compound may be selected from MoS 2 , MoSe 2 , MoTe 2 , WS 2 and WSe 2 as an example.

A bias voltage or current is applied to the TCA sensing channel layer 210 through the electrodes 221 and 223 and a current flows through the TCA sensing channel layer 210. The amount of current flowing through the TCA sensing channel layer 210 is ≪ RTI ID = 0.0 > 210 < / RTI > The amount of current in the TCA sensing channel layer 210 may be measured through the electrodes 221 and 223.

Therefore, according to the present invention, by using a semiconductor sensor that exhibits a current change phenomenon in response to the TCA gas, it is possible to detect TCA gas and distinguish the wines in which the Bourne phenomenon occurs.

3 is a view for explaining a semiconductor sensor for sensing a TCA according to another embodiment of the present invention.

The semiconductor sensor shown in Fig. 3 includes an electrode formed in a different shape from the electrode of the semiconductor sensor 200 of Fig. 2 or formed at another position. That is, the electrode may be designed in various forms to apply a voltage to the TCA sensing channel layer 210 and to measure a current flowing in the TCA sensing channel layer 210. The sensing sensitivity of the current change amount of the TCA sensing channel layer 210 can be changed according to the distance between the electrodes and the area of the electrode.

3A, the electrodes 311 and 313 may be formed on the TCA sensing channel layer 210 and may be formed by a predetermined distance from the first electrode 311 and the first electrode 311, And a second electrode 313 spaced apart. The electrodes 311 and 313 may include electrode pads 312 and 314 and a voltage applying unit or a current measuring unit may be connected through the electrode pads 312 and 314. [ As described above, the shapes and the intervals of the electrodes 311 and 313 can be designed in various forms.

Or the TCA sensing channel layer 210 may be formed between the electrodes 321 and 323, as shown in FIG. 3 (b).

FIG. 4 is a view for explaining a result of TCA detection of a semiconductor sensor including a TCA sensing channel layer made of ZnO in metal oxide, and FIG. 5 is a view for explaining the result of TCA sensing for a semiconductor including a TCA sensing channel layer made of WSe 2 in a decalcogenide compound. 5 is a view for explaining a result of TCA detection of the sensor.

ZnO is the most popular oxide semiconducting material because it is cheap and easy to form. ZnO has various electrical characteristics and is used in various fields such as transistors and solar cells.

WSe 2 is the most widely studied dicarcogenide compound. It is one of the most promising next-generation semiconductors, exhibiting the best semiconductor properties among two-dimensional materials.

4 and 5, when a small amount of TCA gas is injected into the chamber filled with nitrogen gas of 500 sccm (standard cubic centimeter pre minute) (TAC + N 2 IN), the current change measured through the electrode of the semiconductor sensor is Respectively. Specifically, FIG. 4A shows a current change in a 200 ° C environment, and FIG. 4B shows a current change in a 300 ° C environment. And Fig. 5 shows current changes at room temperature.

As shown in FIGS. 4 and 5, when the TCA gas is injected, the amount of current in the TCA sensing channel layer is greatly increased by the bias voltage or current applied to the TCA sensing channel layer. . Particularly, when the injection of the TCA gas is stopped, the amount of current in the TCA sensing channel layer decreases again. When the TCA gas is injected again, the amount of current in the TCA sensing channel layer increases again. The TCA gas can be repeatedly sensed.

That is, in terms of economy, it is advantageous for the semiconductor sensor to be able to detect the target gas repeatedly instead of being used once, but the semiconductor sensor according to the present invention can repeatedly sense the TCA gas as the result of the experiment.

Hereinafter, in Figs. 6 and 7, a sensor device using the semiconductor sensor described in Figs. 2 to 5 will be described. The sensor device may be mounted on a user terminal including a processor, such as a smart phone, or may be implemented as a separate terminal.

6 is a view for explaining a sensor device for sensing a TCA according to an embodiment of the present invention.

6, a sensor device 600 for sensing a TCA according to the present invention includes a semiconductor sensor 610, a voltage application unit 620, and a current measurement unit 630. [

As described above, the semiconductor sensor 610 includes a TCA sensing channel layer made of a metal oxide semiconductor or a dicarcogenide compound, and the voltage applying unit 620 applies a voltage to the semiconductor sensor 610. In this case, the voltage application unit 620 may apply a voltage to an electrode electrically connected to the TCA sensing channel layer, and the semiconductor sensor 610 may include a substrate and an electrode on which the TCA sensing channel layer is formed.

A current flows through the TCA sensing channel layer by the bias voltage of the voltage applying unit 620, and the current measuring unit 630 measures the current flowing through the TCA sensing channel layer. That is, the current measuring unit 630 can measure the current of the semiconductor sensor and can be connected to the electrode like the voltage applying unit 620.

The measured current value can be displayed on the display device. When the TCA is detected, the current change occurs. Therefore, the user can check the current change and check whether the TCA is detected, and can distinguish the wine having the Bouchone phenomenon.

7 is a view for explaining a sensor device for detecting a TCA according to another embodiment of the present invention.

7, the sensor device 700 for sensing a TCA according to the present invention includes a semiconductor sensor 610, a current control unit 720, and an information output unit 730, (740).

The current controller 720 applies a bias voltage or current to the semiconductor sensor 610 and measures the current of the semiconductor sensor 610. The voltage controller 620 and the current measuring unit 630 Lt; / RTI > The current controller 720 may apply a bias voltage or a current according to a user's sensing request.

The information output unit 730 may compare the current change amount of the semiconductor sensor with the threshold value and output the detection result for the TCA. That is, when the TCA is detected, the current of the TCA sensing channel layer increases. The information output unit 730 determines that the TCA is sensed when the current increase amount of the semiconductor sensor for a predetermined time is equal to or greater than the threshold value, Information can be output. When the current decreases, since the TCA is not detected, the information output unit 730 can compare the current increase amount with the threshold value to determine whether TCA is detected. And the Bourne phenomenon occurrence information can be displayed through the display device.

On the other hand, when the TCA sensing channel layer is made of a metal oxide as described in FIG. 4, TCA sensing performance can be exhibited in a high temperature environment other than a normal temperature range. Accordingly, when the TCA sensing channel layer is made of a metal oxide, the sensor device 700 may further include a heating unit 740 for raising the temperature of the semiconductor sensor 610.

 The heating unit 740 may be in contact with or in close proximity to the semiconductor sensor 610 to provide a high temperature environment to the semiconductor sensor 610, And may be a heating element.

As described above, the present invention has been described with reference to particular embodiments, such as specific elements, and specific embodiments and drawings. However, it should be understood that the present invention is not limited to the above- And various modifications and changes may be made thereto by those skilled in the art to which the present invention pertains. Accordingly, the spirit of the present invention should not be construed as being limited to the embodiments described, and all of the equivalents or equivalents of the claims, as well as the following claims, belong to the scope of the present invention .

Claims (11)

delete delete delete delete delete A semiconductor sensor comprising a TCA sensing channel layer made of a dichalcogenide compound;
A voltage applying unit for applying a voltage to the semiconductor sensor;
A current measuring unit for measuring a current of the semiconductor sensor; And
And an information output unit for comparing the current change amount of the semiconductor sensor with a threshold value and outputting information on occurrence of bouillon phenomenon of the wine,
The amount of current of the TCA sensing channel layer varies depending on the reaction of the TCA sensing channel layer and the TCA (Trichloroanisole) due to the Bouchone phenomenon,
The above-mentioned decalcogenide compound may be WSe2
Sensor device for sensing TCA gas.
delete delete delete The method according to claim 6,
A heating unit for raising the temperature of the semiconductor sensor;
And a sensor device for sensing the TCA gas.
The method according to claim 6,
The semiconductor sensor
A substrate on which the TCA sensing channel layer is formed; And
electrode
And a sensing device for sensing the TCA gas.
KR1020150113910A 2015-08-12 2015-08-12 Semiconductor TCA Sensor and Sensor Device Using the Same KR101784558B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150113910A KR101784558B1 (en) 2015-08-12 2015-08-12 Semiconductor TCA Sensor and Sensor Device Using the Same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150113910A KR101784558B1 (en) 2015-08-12 2015-08-12 Semiconductor TCA Sensor and Sensor Device Using the Same

Publications (2)

Publication Number Publication Date
KR20170019716A KR20170019716A (en) 2017-02-22
KR101784558B1 true KR101784558B1 (en) 2017-10-12

Family

ID=58315098

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150113910A KR101784558B1 (en) 2015-08-12 2015-08-12 Semiconductor TCA Sensor and Sensor Device Using the Same

Country Status (1)

Country Link
KR (1) KR101784558B1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102234509B1 (en) * 2019-07-02 2021-03-30 연세대학교 산학협력단 Gas Sensor with Two-dimensional Transition Metal Dichalcogenide Based on Schottky Barrier Control and Fabrication Method Thereof
CN111398365B (en) * 2020-04-30 2023-08-25 中国人民解放军陆军防化学院 Molybdenum disulfide-based ammonia gas sensor and preparation method thereof
KR102334389B1 (en) * 2020-06-04 2021-12-01 연세대학교 산학협력단 Gas Sensor Based on Two Dimensional Transition Metal Dichalcogenide Alloy

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Cho et al., "Charge-transfer-based Gas Sensing Using Atomic-layer MoS2", SCIENTIFIC REPORTS, 5 : 8052, DOI: 10.1038/srep08052*

Also Published As

Publication number Publication date
KR20170019716A (en) 2017-02-22

Similar Documents

Publication Publication Date Title
KR101784558B1 (en) Semiconductor TCA Sensor and Sensor Device Using the Same
US20070166832A1 (en) Apparatus, methods, and systems having gas sensor with catalytic gate and variable bias
US20110263036A1 (en) Amorphous thin film for sensing
Lu et al. High-performance double-gate $\alpha $-InGaZnO ISFET pH sensor using a HfO2 gate dielectric
US10845323B2 (en) Ion sensor, ion concentration measurement method, and electronic component
Nguyen et al. Organic field-effect transistor with extended indium tin oxide gate structure for selective pH sensing
Krstev et al. Detection of random vapour concentrations using an integrating diamond gas sensor
Illyaskutty et al. Thermally modulated multi sensor arrays of SnO2/additive/electrode combinations for enhanced gas identification
Shi et al. Precise gas discrimination with cross-reactive graphene and metal oxide sensor arrays
Wongchoosuk et al. Au-doped zinc oxide nanostructure sensors for detection and discrimination of volatile organic compounds
KR101322354B1 (en) Humidity sensor, humidity sensing method and transistor therefor
Shin et al. Effect of charge storage engineering on the NO 2 gas sensing properties of a WO 3 FET-type gas sensor with a horizontal floating-gate
LU101020B1 (en) Ion-sensitive field effect transistor
TWI244702B (en) Titanium oxide thin film for extended gate field effect transistor using reactive sputtering
US20120048733A1 (en) Ion sensor for measuring ion concentration of a solution
Wang et al. Novel high sensitivity and selectivity semiconductor gas sensor based on the p+ n combined structure
Abedi et al. Application of 2, 2′-dithiobis (4-methylthiazole) as sensing material for construction of Lu3+ PVC-membrane sensor
Hatami et al. Highly selective and sensitive Ytterbium (III) PVC membrane sensor based on 1, 13-bis (8-quinolyl)-1, 4, 7, 10, 13-pentaoxatridecane
Bahari et al. Study on pH sensing properties of RF magnetron sputtered tantalum pentoxide (Ta 2 O 5) thin film
Lee et al. A study on a differential-measurement biosensor using high performance extended-gate field-effect-transistors with TiO2 sensing membranes
Liao et al. The influence of isothermal annealing on tin oxide thin film for pH-ISFET sensor
Wang et al. A new type of semiconductor gas sensor based on the n+ n combined structure
EP2629086B1 (en) Molecule sensing and identification
Hadi et al. Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes
Yoo et al. Metal-oxide thin-film transistor-based pH sensor with a silver nanowire top gate electrode

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
AMND Amendment
X701 Decision to grant (after re-examination)
GRNT Written decision to grant