KR101759255B1 - Method for inclined angle-controlled growth of nanostructure without catalyst - Google Patents

Method for inclined angle-controlled growth of nanostructure without catalyst Download PDF

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KR101759255B1
KR101759255B1 KR1020150132182A KR20150132182A KR101759255B1 KR 101759255 B1 KR101759255 B1 KR 101759255B1 KR 1020150132182 A KR1020150132182 A KR 1020150132182A KR 20150132182 A KR20150132182 A KR 20150132182A KR 101759255 B1 KR101759255 B1 KR 101759255B1
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sapphire substrate
thin film
nanostructure
film layer
forming
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KR20170034027A (en
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남옥현
이규승
채수룡
장종진
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한국산업기술대학교산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
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    • H01L21/02603—Nanowires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes

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Abstract

The present invention relates to a nanostructure growth method having an inclination angle in an uncatalyzed manner, and more particularly, to a nanostructure growth method in which a nanostructure is grown in a horizontal or inclined structure in a horizontal or inclined structure on an upper surface of a sapphire substrate or a compound thin film through a patterning and etching process, To a method of growing a structure.
The method for growing a nanostructure having an inclination angle according to the present invention includes forming a nanomask layer on an M-plane sapphire substrate; Selectively etching the M-plane sapphire substrate by etching the nanomask layer through a patterning process; Forming a multi-faceted structure of compound nuclei in the exposed portions of the M-plane sapphire substrate; And forming a nanostructure having a predetermined angle in the vertical direction from the surface of the M-plane sapphire substrate from the compound nucleus. Further, the method may further include nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concavo-convex structure on the surface of the M-plane sapphire substrate before forming the nanomask layer, Discloses a structure growth method.

Description

METHOD FOR INCLINED ANGLE CONTROLLED GROWTH OF NANOSTRUCTURE WITHOUT CATALYST BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a method of growing a nanostructure having a variable inclination angle without catalyst, and more particularly, to a method of growing nanostructures having a variable or inclined structure in which the nanostructures are selectively and positively positioned on a sapphire substrate or a compound thin film by patterning and etching without using a metal catalyst. To a method for growing the same.

Nanotechnology is a field of nanomaterials, nanomaterials such as nanowires, nanobelt, nanoribbons and nanorods have been of greatest interest to researchers in recent years. Since these nanomaterials have excellent electrical, optical, mechanical and thermal properties, they can be used as a field effect transistor (FET), a light emitting diode (LED), a logic circuit, And so on. ≪ / RTI >

Nanotechnology, including nanowires, is rapidly expanding its research area, and now it is expanding its scope to almost all scientific fields such as physics, chemistry, biotechnology, and engineering. Especially, semiconductor nanowire is one of the most popular fields can do. Semiconductor nanowires can control size, interfacial properties, and electronic properties during the synthesis process, and a large amount of parallel assembly is possible using the thus synthesized nanowires. Therefore, semiconductor nanowires are recognized as the most reliable material for implementing nanodevices.

In the conventional technology for growing the substrate vertical semiconductor nanowire, the vapor growth method, the vapor-solid growth method, the electrochemical deposition method, the solution growth method Solution Growth, and SEG (epitaxial growth).

Among them, VLS (Vapor-Liquid-Solid) growth method was mainly used as a method of growing a nanowire. The VLS growth method adsorbs a reactant to a nano-cluster or a nano- It is a technology that grows in one dimension. Therefore, conventionally, a method of depositing a metal catalyst on a silicon substrate well grown with a single crystal and growing a nanowire using VLS growth method is mainly used. Korean Patent No. 10-2007-0087146 also uses a VLS method using a metal catalyst in an initial stage for growing nanowires.

However, the metal catalyst required for nanowire growth using VLS may contaminate the inside of the nanowire, thereby lowering the purity. As a result, the quality of the nanowire may be deteriorated. In addition to the growth of the nanowire, There is a problem that a process is required.

Korean Patent Laid-Open No. 10-2007-0087146 (published on Mar. 4, 2009) Korean Patent Publication No. 10-2010-0015799 (Published on Aug. 30, 2011)

SUMMARY OF THE INVENTION The present invention has been made to overcome the above problems of the prior art, and it is an object of the present invention to simplify a process by using a metal catalyst instead of a metal catalyst in an initial stage of growing a nanostructure, And a method for manufacturing a high-quality nano structure by preventing contamination caused by the use of a metal catalyst.

In accordance with an aspect of the present invention, there is provided a method for growing a non-catalyst nanostructure,

Forming a nanomask layer on the M-plane sapphire substrate; Selectively etching the M-plane sapphire substrate by etching the nanomask layer through a patterning process; Forming a multi-faceted structure of compound nuclei in the exposed portions of the M-plane sapphire substrate; And forming a nanostructure having a predetermined angle in the vertical direction from the surface of the M-plane sapphire substrate based on the compound nucleus.

In addition, when the unit size of the portion where the nano-mask layer is etched and the M-plane sapphire substrate is exposed ranges from several nanometers to several micrometers, the predetermined angle may be the first angle range.

The method may further include nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concave-convex structure on the surface of the M-plane sapphire substrate before forming the nanomask layer .

When the unit size of the exposed portion of the M-plane sapphire substrate is in the range of a few micrometers, the nanostructure may be formed in a horizontal direction with respect to the surface of the M-plane sapphire substrate have.

When the nano-mask layer is etched so that the unit size of the exposed portion of the M-plane sapphire substrate ranges from a few nanometers to a few hundred nanometers, the predetermined angle may be a second angle range.

In accordance with another aspect of the present invention, there is provided a method for growing a non-catalyst nanostructure,

Forming a GaN thin film layer on the M-plane sapphire substrate; Forming a nano-mask layer on the GaN thin film layer; Etching the nanomask layer through a patterning process to selectively expose the GaN thin film layer; Forming a multi-facetted compound nucleus in the exposed portion of the GaN thin film layer; And forming a nanostructure having a predetermined angle in the vertical direction from the surface of the GaN thin film layer from the compound nucleus.

Here, when the GaN thin film layer is semi-polar, the predetermined angle may be a first angle range.

In addition, when the GaN thin film layer is non-polar, the nanostructure may be formed in a horizontal direction with respect to the surface of the M-plane sapphire substrate.

The method may further include nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concave-convex structure on the surface of the M-plane sapphire substrate before forming the GaN thin film layer If the GaN thin film layer is semi-polar, the predetermined angle may be a second angle range.

In accordance with another aspect of the present invention, there is provided a method for growing a non-catalyst nanostructure,

Forming a nano-mask layer on the R-plane sapphire substrate; Selectively etching the R-plane sapphire substrate by etching the nano-mask layer through a patterning process; Forming a multi-faceted structure of compound nuclei in exposed portions of the R-plane sapphire substrate; And forming a nanostructure from the compound nucleus in a horizontal direction with respect to the surface of the R-plane sapphire substrate.

According to the embodiment of the present invention, it is possible to prevent the pollution problem inside the nanostructure due to the metal catalyst used in the initial stage of nanostructure growth.

In addition, since the steps such as deposition, growth, and size control of the metal catalyst need not be performed, the process can be simplified and cost-effective.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.
FIG. 1 illustrates a method of growing a nanostructure according to an embodiment of the present invention.
FIG. 2 illustrates a method of growing a nanostructure according to an embodiment of the present invention, which further includes a nitriding treatment step.
FIG. 3 illustrates a structure of a sapphire substrate surface nitrided according to an embodiment of the present invention.
4 is an SEM image of a nanostructure grown under different conditions according to an embodiment of the present invention.
5 shows a nanostructure formed in a horizontal direction with respect to the surface of an M-plane sapphire substrate.
FIG. 6 illustrates a method of growing a nanostructure according to another embodiment of the present invention.
FIG. 7 illustrates a method of growing a nanostructure according to another embodiment of the present invention, which further includes a nitriding treatment step.
8 shows a nanostructure formed in a horizontal direction with respect to the surface of the R-plane sapphire substrate.
FIG. 9 illustrates a method of applying nanostructures grown according to the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The present invention is capable of various modifications and various embodiments, and specific embodiments will be described in detail below with reference to the accompanying drawings.

The following examples are provided to aid in a comprehensive understanding of the methods, apparatus, and / or systems described herein. However, this is merely an example and the present invention is not limited thereto.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. The following terms are defined in consideration of the functions of the present invention, and may be changed according to the intention or custom of the user, the operator, and the like. Therefore, the definition should be based on the contents throughout this specification. The terms used in the detailed description are intended only to describe embodiments of the invention and should in no way be limiting. Unless specifically stated otherwise, the singular form of a term includes plural forms of meaning. In this description, the expressions "comprising" or "comprising" are intended to indicate certain features, numbers, steps, operations, elements, parts or combinations thereof, Should not be construed to preclude the presence or possibility of other features, numbers, steps, operations, elements, portions or combinations thereof.

It is also to be understood that the terms first, second, etc. may be used to describe various components, but the components are not limited by the terms, and the terms may be used to distinguish one component from another .

Hereinafter, exemplary embodiments of a method of growing a nanostructure according to the present invention will be described in detail with reference to the accompanying drawings.

The term "nanostructure" as used throughout this specification refers to nanostructures, nanopillars, nanoneedles, nanorods, nanowires and nanotubes (e.g., single wall nanotubes, or (E.g., multi-wall nanotubes), and other structures of elongated similar dimensions, including, but not limited to, a variety of functionalized and derived fibril forms, such as threads, and nanofibers in the form of a fabric.

In addition, the nanostructure may have various cross-sectional shapes, for example, rectangular, polygonal, square, elliptical, or circular. Thus, the nanostructure may have a cylindrical and / or cone-shaped three-dimensional shape. In various embodiments, the plurality of nanostructures can be, for example, substantially parallel, arcuate, sinusoidal, etc. with respect to each other.

FIG. 1 illustrates a method of growing a nanostructure according to an embodiment of the present invention.

A method for growing a nanostructure according to an embodiment of the present invention includes forming a nanomask layer 13 on an M-plane sapphire substrate 11 (S110), patterning the nanomask layer 13) to selectively expose the M-plane sapphire substrate 11 (S120), forming a compound nucleus 14 having a multi-plane structure on the exposed portion of the M-plane sapphire substrate 11 (S140) forming a nanostructure 15 having a predetermined angle in the vertical direction from the surface of the M-plane sapphire substrate 11 based on the compound nucleus 14 (S140) .

First, in step S110, a nano-mask layer 13 is formed on the M-plane sapphire substrate 11.

The substrate for growing the nanostructures 15 may include at least one of sapphire, Si, SiC, ZnO, MgAl 2 O 4 , MgO, Ga 2 O 3 , LiAlO 2 , LiGaO 2 And the like. However, in order to achieve the object of the present invention, a sapphire substrate 11 whose crystal plane is an M-plane or a sapphire substrate whose crystal plane is an R-plane will be described in this specification.

The nanomask layer 13 may be performed at a temperature in the range of about 1000 to about 1100 ° C. However, the present invention is not limited thereto, and can be carried out under various conditions depending on the kind of compound and the like.

The nano-mask layer 13 may include silicon oxide (Si x O y ), silicon nitride (Si x N y ), or the like. The nanomask layer 13 may be formed by a commonly used thin film deposition method. For example, sputtering, ion beam deposition, plasma deposition, or image vapor deposition.

In step S120, the nanomask layer 13 formed using the patterning process and the etching process is etched to selectively expose the M-plane sapphire substrate 11. This is to ultimately positionally grow the nanostructures 15 above the M-plane sapphire substrate 11.

In the patterning process, a photoresist is coated on the surface of the nano-mask layer, a desired pattern is transferred to a coated photoresist using an exposure machine, and then developed with a developer to form a pattern . More specifically, a photoresist refers to a resin that causes a chemical change upon irradiation with light, and causes a change in dissolution, coagulation, or the like in response to light from the ultraviolet region to the visible light region. A negative type photoresist, a photosensitive resin in which a polymer solubilizes only a part irradiated with light, and a photoresist disappears, is called a positive type photoregister do.

The M-plane sapphire substrate 11 is selectively exposed in consideration of a portion where the nanostructure 15 is to be formed through the patterning process and the etching process.

In order to achieve the object of the present invention, the unit size of the exposed portion of the M-plane sapphire substrate 11 may range from several nanometers to several micrometers. However, it is not necessarily limited to the above range.

In step S130, a compound nucleus 14 having a multi-plane structure is formed at a portion where the M-plane sapphire substrate 11 is exposed to the outside through step S120.

The compound nucleus 14 may be performed at a temperature of about 1000 to about 1100 ° C., a pressure of about 100 to 300 torr, and a time of about 10 seconds using a chemical vapor deposition method or the like, and N 2 gas may be used as the carrier gas . However, the present invention is not limited thereto, and can be carried out under various conditions depending on the kind of compound and the like.

In the prior art, a metal catalyst is deposited and a nanostructure is grown therefrom using a Vapor-Liquid-Solid (VLS) method. However, in order to apply the nanostructure to a nano device, a high purity is required. However, since the metal catalyst is different from the nanostructure to be grown, there is a problem that the process of growing the metal catalyst and the process of growing the nanostructure have to be separately performed. However, in the present invention, The above problems can be solved by nuclear deposition and using it as a growth base of nanostructures.

In step S140, the nanostructure 15 is grown on the basis of the compound nuclei 14. The nanostructure 15 grows in a first angle range in the vertical direction from the surface of the M-plane sapphire substrate 11. The first angle is preferably about 58.4 degrees, and the first angle range may range from about 55 degrees to about 62 degrees.

The nanostructure 15 may be performed at a temperature of about 1000 to about 1100 ° C, a pressure of about 100 to about 500 torr, a time of about 300 seconds, and a SiH 4 gas of about 100 nmol / min using a chemical vapor deposition H 2 may be used. However, the present invention is not limited thereto, and can be carried out under various conditions depending on the kind of compound and the like.

The compound forming the nanostructure 15 may include a Group II-IV compound, a Group III-V compound, a Group IV-VI compound, a mixture thereof, or a metal oxide.

Further, the group II-IV compound is a compound of the elemental compound containing CdSe, CdTe, ZnS, ZnSe and ZnTe, and the group III-V compound is an elemental compound thereof including GaN, GaP, GaAs, GaSb, InP, InAs and InSb. And the Group IV-VI compound may include these elemental compounds including PbS, PbSe, and PbTe, respectively. The metal oxide may include TiO 2 , ZnO, SiO 2 , SnO 2 , Wo 3 , ZrO 2 , HfO 2 , Ta 2 O 5 , BaTiO 2 , Y 2 O 3 and ZrSiO 4 .

Although it has been described that the nanostructure 15 is formed in the first angular range in steps S110 to S140, the nanostructure may be formed by the nitriding treatment of the M-plane sapphire substrate 11, The size of the exposed portion of the substrate and the size of the unit (the size of each of the holes) may vary, and the range of angles with the substrate may vary. Which will be discussed in more detail below.

FIG. 2 illustrates a method of forming a nanostructure 15 by further including a nitriding step in a method of growing a nanostructure 15 according to an embodiment of the present invention.

A step S210 of nitriding the surface of the M-plane sapphire substrate 11 with NH 3 gas to form an R-plane concave-convex structure on the surface of the M-plane sapphire substrate 11, A step S230 of forming a nano-mask layer 13 on the upper surface of the M-plane sapphire substrate 11 and selectively exposing the M-plane sapphire substrate 11 by etching the nano-mask layer 13 through a patterning process (steps S231 and S232) A step S240 of forming a compound nucleus 14 having a multisurface structure on the exposed portion of the M-plane sapphire substrate 11, a step S240 of forming a compound nucleus 14 on the surface of the M-plane sapphire substrate 11 from the compound nucleus 14, (S251, S252) of forming nanostructures 151, 152 having a second angle in a horizontal direction or in a vertical direction from the surface of the M-plane sapphire substrate 11.

3, the surface of the M-plane sapphire substrate 11 is modified to have an R-plane concavo-convex structure by nitridation treatment using NH 3 gas at a high temperature. The R-plane concavo-convex structure provides a base on which the nanostructure 15 can grow at a predetermined angle in a subsequent step.

The nitridation treatment may be performed at a temperature of about 1000 to 1100 DEG C, a pressure of about 100 to 300 torr, and a duration of about 300 seconds, and H 2 may be used as the carrier gas. However, the present invention is not limited thereto, and can be carried out under various conditions depending on the kind of compound and the like.

The nitriding treatment refers to a processing method in which nitride is formed on the surface of a material to improve corrosion resistance, abrasion resistance, fatigue strength and the like. In the present invention, a gas nitridation method using NH 3 gas is used, but not always limited thereto, but a liquid nitridation method may be used.

Step S220 is a process of forming the nano-mask layer 13 on the M-plane sapphire substrate 11, which is the same as step S110, and thus a detailed description thereof will be omitted.

In steps S231 and S232, the patterning and etching process is performed in the same manner as in step S120, but the unit size of the exposed portion of the M-plane sapphire substrate 11 is adjusted to adjust the shape and growth angle of the nanostructure 15 . In step S231, the nanostructure 151 grows in a horizontal direction with respect to the surface of the M-plane sapphire substrate 11 when the unit size of the exposed portion is in the range of a few micrometers. On the other hand, when the unit size of the exposed portion is formed in the range of several nanometers to several hundreds of nanometers as in step S231, the nanostructure 152 is arranged in a second angle range . The second angle may preferably be about 31.6 degrees, and the second angle range may comprise about 28 degrees to 35 degrees.

Step S240 is a process of forming a compound nucleus 14 having a multi-faced structure on a portion where the M-plane sapphire substrate 11 is exposed to the outside, and is the same as the step S130.

In steps S251 and S252, the nanostructures 151 and 152 are grown on the basis of the compound nucleus 14 as in step S140. The M-plane sapphire substrate 11 adjusted in step S231 or S232 The nanostructures 151 and 152 may grow in different and / or different structures depending on the unit size range of the exposed portion.

If the same method as in step S231 is performed, the nanostructure 151 may grow in a horizontal direction with respect to the M-plane sapphire substrate 11 as shown in step S251. On the other hand, if the same method as in step S232 is performed, the nanostructure 152 can grow in a second angular range in the vertical direction from the surface of the M-plane sapphire substrate 11, as shown in step S252 .

4 is an SEM image of a nanostructure grown under different conditions according to an embodiment of the present invention.

4 (a) is an image of a nanostructure formed in a horizontal direction with respect to the M-plane sapphire substrate through steps S231 and S251 of FIG. 2. FIG.

4B is an image of a nanostructure formed in a second angle range from the M-plane sapphire substrate in a vertical direction through steps S232 and S252 of FIG. 2. FIG.

4C is an image of the nanostructure formed in the first angle range in the vertical direction from the M-plane sapphire substrate through the process described in FIG.

5 shows a nanostructure formed in a horizontal direction with respect to the surface of an M-plane sapphire substrate, the cross-section of which is a trapezoidal shape.

5 (a) schematically shows a nanostructure formed in a horizontal direction with respect to an M-plane sapphire substrate 11 through the step S251 in one embodiment of the present invention, and FIG. 5 (b) Is an SEM image.

FIG. 6 illustrates a method of growing a nanostructure according to another embodiment of the present invention.

A method for growing a nanostructure according to another embodiment of the present invention includes forming a GaN thin film layer 12 on an M-plane sapphire substrate 11 (S610), forming a nanomask (not shown) on the GaN thin film layer 12 A step of forming a layer 13 on the GaN layer 12 by selectively etching the GaN layer 12 by etching the nanomask layer 13 through a patterning process S630, (S640), forming nano structures (151, 152) having a predetermined angle in the vertical direction from the surface of the GaN thin film layer (12) based on the compound nuclei (14) 152 (S651, S652).

In step S610, a GaN thin film layer 12 is formed on the M-plane sapphire substrate 11.

The shape and structure of the nanostructures 151 and 152 formed according to the conditions such as the kind of the polarity (10-10 (nonpolar) or 10-13 (semi-polar)) according to the direction of the crystal face of the GaN thin film layer 12, And the angle range with the substrate can be varied. Specifically, in order to grow the GaN thin film layer 12 to have a crystal plane of 10 to 10 (non-polar), the growth process of the GaN thin film layer is performed at a temperature of about 900 to 1100 ° C., In order to grow the GaN thin film layer, the GaN thin film layer may be grown by maintaining the temperature at about 900 to 1100 ° C for about 5 to 10 minutes. This is because the surface energy of the surface of the M-plane sapphire substrate 11 is changed at a high temperature.

When the crystal plane direction of the GaN thin film layer 12 is 10-10 (non-polar), the nanostructure 151 grows in a horizontal direction with respect to the surface of the GaN thin film layer 12, As you can see, it can grow into a trapezoidal shape.

When the crystal plane direction of the GaN thin film layer 12 is 10-13 (semi-polar), the nanostructure 152 may grow in a first angle range from the surface of the GaN thin film layer 12 in the vertical direction.

Step S620 is a process of forming the nano-mask layer 13 on the GaN thin film layer 12, which is the same as step S110, and thus a detailed description thereof will be omitted.

In operation S630, the nanomask layer 13 is patterned and etched to selectively expose the GaN thin film layer 12, which is the same as in operation S120.

In step S640, a compound nucleus 14 having a multi-facet structure is grown on the exposed part of the GaN thin film layer 12. Since the compound nucleus 14 is the same as the step S130, detailed description will be omitted.

Step S651 and step S652 are the same as steps S251 and S252 for growing the nanostructures 151 and 152 from the compound nucleus 14, and therefore detailed description thereof will be omitted. If the crystal plane direction of the GaN thin film layer 12 is 10-10 (non-polar), the process may proceed to step S651. If the crystal plane direction of the GaN thin film layer 12 is 10-13 (semi-polar), the process may proceed to step S652.

FIG. 7 illustrates a method of forming a nanostructure 15 by further including a nitriding process in a nanostructure growth method according to another embodiment of the present invention.

(S710) of nitriding the surface of the M-plane sapphire substrate 11 with NH 3 gas to form an R-plane concave-convex structure (see FIG. 3) on the surface of the M-plane sapphire substrate 11 A step S710 of forming a GaN thin film layer 12 on the sapphire substrate 11 and a step of forming a nanomask layer 13 on the GaN thin film layer S720, A step S730 of selectively etching the GaN thin film layer 12 by etching the GaN thin film layer 13 to form a compound nucleus 14 having a multi-plane structure on the exposed portion of the GaN thin film layer 12, And forming a nanostructure 15 having a predetermined angle in the vertical direction from the surface of the GaN thin film layer 12 based on the compound nucleus 14 (S750).

In step S710, as the process of surface R- M- surface of sapphire substrate 11, the surface modification to the concave-convex structure through the nitriding treatment using NH 3 gas at a high temperature, the same as the step S210, so a detailed description thereof will be omitted.

In step S720, a GaN thin film layer 12 is formed on the M-plane sapphire substrate 11, which is the same as the step S610, and thus a detailed description thereof will be omitted. Unlike the GaN thin film layer 12 having a crystal plane direction of 10 < -10 > or 10 < -13 > formed in the step S610, the GaN thin film layer 12 is formed by the nitriding process formed in the step S720, (Semi-polar).

Steps S730 to S760 are the same as steps S620 to S652 (or S651), respectively, and thus detailed description thereof will be omitted. However, the nanostructure 15 formed in step S760 by the crystal plane direction 11-22 of the GaN thin film layer grows in the second angle range from the GaN thin film layer 12 in the vertical direction.

8 shows a nanostructure formed in a horizontal direction with respect to the surface of the R-plane sapphire substrate.

FIG. 8A is a schematic view of a nanostructure formed in a horizontal direction with respect to a sapphire substrate, and FIG. 8B is a SEM image of the nanostructure.

A method for forming a nano structure in a horizontal direction with respect to a surface of an R-plane sapphire substrate, comprising the steps of: forming a nano-mask layer on an R-plane sapphire substrate; etching the nano-mask layer through a patterning process, Forming a compound nucleus having a multi-faced structure on the exposed portion of the R-plane sapphire substrate, forming a nanostructure in a horizontal direction with respect to the surface of the R-plane sapphire substrate from the compound nucleus, And a method of forming a nanostructure using the above-described M-plane sapphire substrate. However, as can be seen from FIG. 8 (a) or FIG. 8 (b), the nanostructure can be grown in a triangular shape having a sharp top on its cross section.

FIG. 9 illustrates a method of applying nanostructures grown according to the present invention.

As shown in FIG. 9 (a) or FIG. 9 (b), the nanostructure grown according to the present invention may be formed on a high-quality semiconductor layer to be used for various optical devices or electronic devices.

Further, as shown in FIG. 9 (c), a nanostructure grown horizontally on the sapphire substrate or the GaN thin film layer according to the present invention may be used for manufacturing a transistor.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments described in the present invention are not intended to limit the technical spirit of the present invention but to illustrate the present invention. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents thereof should be construed as being included in the scope of the present invention.

11: M-plane sapphire substrate
12: GaN thin film layer
13: Nano mask layer
14: compound nuclei
15: a nanostructure formed at a first angle in the vertical direction from the substrate
151: a nano structure formed in a horizontal direction with respect to a substrate
152: nano structure formed at a second angle in the vertical direction from the substrate

Claims (11)

Nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concave-convex structure on the surface of the M-plane sapphire substrate;
Forming a nanomask layer on the M-plane sapphire substrate;
Etching the nanomask layer through a patterning process to expose the M-plane sapphire substrate with a unit size ranging from 1 탆 to 10 탆;
Forming a multi-faceted structure of compound nuclei in the exposed portions of the M-plane sapphire substrate; And
Forming a nanostructure in a horizontal direction on the surface of the M-plane sapphire substrate based on the compound nucleus;
Wherein the cross-section of the nanostructure is a trapezoidal shape.
delete delete delete Nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concave-convex structure on the surface of the M-plane sapphire substrate;
Forming a nanomask layer on the M-plane sapphire substrate;
Etching the nanomask layer through a patterning process to expose the M-plane sapphire substrate with a unit size ranging from 10 nm to 1000 nm;
Forming a multi-faceted structure of compound nuclei in the exposed portions of the M-plane sapphire substrate; And
Forming nanostructures in the vertical direction from 28 degrees to 35 degrees from the surface of the M-plane sapphire substrate based on the compound nuclei;
Wherein the shape of the nanostructure is nanorodic. ≪ RTI ID = 0.0 > 8. < / RTI >
delete Forming a GaN thin film layer on the M-plane sapphire substrate;
Forming a nano-mask layer on the GaN thin film layer;
Etching the nanomask layer through a patterning process to selectively expose the GaN thin film layer;
Forming a multi-facetted compound nucleus in the exposed portion of the GaN thin film layer; And
Forming a nanostructure having a predetermined angle in the vertical direction from the surface of the GaN thin film layer from the compound nucleus;
Including,
Wherein the predetermined angle is in a range of 55 to 62 degrees when the GaN thin film layer is semi-polar and the temperature is maintained for 5 to 10 minutes after reaching a temperature of 900 to 1100 DEG C in the GaN thin film layer. Catalytic nanostructure growth method.
Forming a GaN thin film layer on the M-plane sapphire substrate;
Forming a nano-mask layer on the GaN thin film layer;
Etching the nanomask layer through a patterning process to selectively expose the GaN thin film layer;
Forming a multi-facetted compound nucleus in the exposed portion of the GaN thin film layer; And
Forming a nanostructure having a predetermined angle in the vertical direction from the surface of the GaN thin film layer from the compound nucleus;
Including,
When the GaN thin film layer is non-polar,
Wherein the nanostructure is formed in a horizontal direction with respect to a surface of the M-plane sapphire substrate, the cross section of the nanostructure is in a trapezoidal shape, and the GaN thin film layer is formed when the temperature reaches 900 to 1100 ° C. Method for growing nanostructures.
Forming a GaN thin film layer on the M-plane sapphire substrate;
Forming a nano-mask layer on the GaN thin film layer;
Etching the nanomask layer through a patterning process to selectively expose the GaN thin film layer;
Forming a multi-facetted compound nucleus in the exposed portion of the GaN thin film layer; And
Forming a nanostructure having a predetermined angle in the vertical direction from the surface of the GaN thin film layer from the compound nucleus;
The method of growing nanostructures according to claim 1,
The method comprises:
Further comprising the step of nitriding the surface of the M-plane sapphire substrate with NH 3 gas to form an R-plane concavo-convex structure on the surface of the M-plane sapphire substrate before forming the GaN thin film layer,
When the GaN thin film layer is semi-polar,
Wherein the predetermined angle is from 28 degrees to 35 degrees and the nanostructure is in the form of nanorods and the GaN thin film layer is formed by maintaining the temperature for 5 to 10 minutes after reaching a temperature of 900 to 1100 DEG C A method for growing a nanostructure without catalyst.
delete A nanostructure produced by the method of any one of claims 1, 5 and 7 to 9.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230052015A (en) * 2021-10-12 2023-04-19 성균관대학교산학협력단 A space-free vertical field effect transistor comprising an active layer having vertically grown grains

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120068153A1 (en) * 2010-09-14 2012-03-22 Han Kyu Seong Group iii nitride nanorod light emitting device and method of manufacturing thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452917B1 (en) 1999-04-08 2002-09-17 Qualcomm Incorporated Channel estimation in a CDMA wireless communication system
NZ579852A (en) 2007-03-23 2012-03-30 Novartis Ag Use of a masked or coated copper salt for the treatment of macular degeneration

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120068153A1 (en) * 2010-09-14 2012-03-22 Han Kyu Seong Group iii nitride nanorod light emitting device and method of manufacturing thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
C Tessarek et al., ‘Optical properties of vertical, tilted and in-plane GaN nanowires on different crystallographic orientations of sapphire’, J. Phys. D: App. Phys., Vol. 47 (2014) 394008(9pp).*
Tongtong Zhu et al., ‘Unintentional doping in GaN’, Phys. Chem. Chem. Phys., Vol. 14 (2012) pp.9558-9573.*

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230052015A (en) * 2021-10-12 2023-04-19 성균관대학교산학협력단 A space-free vertical field effect transistor comprising an active layer having vertically grown grains
KR102580260B1 (en) * 2021-10-12 2023-09-19 성균관대학교산학협력단 A space-free vertical field effect transistor comprising an active layer having vertically grown grains

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