KR101748952B1

KR101748952B1 - Semiconductor device comprising repairable penetration electrode

Info

Publication number: KR101748952B1
Application number: KR1020150134619A
Authority: KR
Inventors: 정성수; 백상현
Original assignee: 한양대학교 에리카산학협력단
Priority date: 2015-09-23
Filing date: 2015-09-23
Publication date: 2017-06-20
Also published as: KR20170035585A

Abstract

A semiconductor device having repairable penetrating electrodes is provided. The semiconductor device includes input nodes, output nodes, and main penetration electrodes that pass signals between the input nodes and the output nodes and pass through the substrate, And a unit group including spare penetration electrodes, wherein the unit group includes a first unit group and a second unit group, and the input unit corresponding to the first unit group The node and the output node are connected to the spare through electrodes in the first and second unit groups and the main through electrode in the second unit group to cause a failure in the main through electrode in the first unit group Penetrating electrodes in the first and second unit groups and the main penetrating electrode in the second unit group are arranged in a direction in which the defective It transmits a signal to replace the main through-hole.

Description

TECHNICAL FIELD [0001] The present invention relates to a semiconductor device having repairable penetrating electrodes,

The present invention relates to a semiconductor device having repairable penetrating electrodes, and more particularly, to a semiconductor device having repairable penetrating electrodes including unit through-electrodes including a main penetrating electrode and a spare penetrating electrode, Device.

In the semiconductor industry, packaging technology for integrated circuits has been continuously developed to meet the demand for miniaturization and the reliability of mounting. For example, the demand for miniaturization is accelerating the development of technology for packages close to the chip size, and the demand for mounting reliability emphasizes the importance of packaging technology to improve the efficiency of mounting operation and mechanical and electrical reliability after mounting I have to.

The term "stack" in the semiconductor industry refers to a technology for vertically stacking at least two semiconductor chips or packages, which can implement a product having a memory capacity larger than a memory capacity that can be implemented in a semiconductor integration process, And then stacking them.

Recently, there has been a lot of research on three-dimensional package technology as product miniaturization, high package density, high performance, and integration demand between chips are continuously increasing. Through Silicon Via (TSV) is an important technology used in three-dimensional packages of silicon devices. Although the conventional silicon chip has a structure in which electrodes exist only on the surface for external connection, the silicon-penetration-electrode (TSV) technique is a packaging technique in which a connecting electrode structure penetrating the front and back surfaces of the chip is made, to be.

As a specific example, Korean Patent Laid-Open Publication No. 10-2012-0071921 (Application No. 10-2010-133657) discloses a composition filling a hole of a silicon through electrode by using a metal powder, a solder powder, a curable resin, a reducing agent and a curing agent have.

Korean Patent Publication No. 10-2012-0071921

SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device having repairable through electrodes with improved repair efficiency.

It is another object of the present invention to provide a semiconductor device having a repairable penetrating electrode with minimized signal shift during repair of the penetrating electrode.

The technical problem to be solved by the present invention is not limited to the above.

According to an aspect of the present invention, there is provided a semiconductor device having repairable penetrating electrodes.

According to one embodiment, the semiconductor device having the repairable penetrating electrode comprises: input nodes, output nodes, and a circuit for transferring signals between the input nodes and the output nodes, And a unit group including spare penetration electrodes, wherein the unit group includes a first unit group and a second unit group, and the second unit group includes a first unit group and a second unit group, Wherein the input node and the output node corresponding to the first unit group are connected to the spare through electrodes in the first and second unit groups and the main through electrode in the second unit group, Through electrodes in the first and second unit groups and in the second unit group in the case where a failure occurs in the main penetrating electrode in the first unit group, Any one of the through-electrode, it is possible to pass a signal to replace the main electrode through which the defect has occurred.

According to an embodiment, the input node and the output node corresponding to the first unit group may be connected to at least one main through electrode included in another unit group except for the first unit group.

According to one embodiment, the unit group includes a third unit group spaced apart from the second unit group via the first unit group, and corresponds to the first unit group, and the third unit group Adjacent input nodes and the output nodes are connected to the main penetrating electrode in the third unit group and the input nodes and the output nodes corresponding to the first unit group and adjacent to the second unit group are connected to the main through- 2 unit group.

According to one embodiment, the unit group includes a third unit group spaced apart from the second unit group via the first unit group, and the input node and the output The node may be connected to the main penetrating electrode in the second unit group and the main penetrating electrode in the third unit group.

According to one embodiment, the input nodes and the output nodes corresponding to the same unit group can be connected to the same spare through electrodes.

According to one embodiment, the number of the main through electrodes in the first unit group and the second unit group may be different from each other.

According to one embodiment, the semiconductor device having the repairable penetrating electrode includes main through electrodes and spare through electrodes arranged two-dimensionally in an in-plane view and penetrating the substrate, First through fourth unit groups including the main through electrodes and at least one spare through electrodes are defined, wherein the first and second unit groups share the main through electrodes and the spare through electrodes, Wherein the second and third unit groups share the main through electrodes and the spare through electrodes and the third and fourth unit groups share the main through electrodes and the spare through electrodes, The first unit groups may share the main through electrodes and the spare through electrodes.

According to one embodiment, when a failure occurs in the main penetrating electrode in the first unit group, any one of the main penetrating electrodes or the spare penetrating electrodes in the second and the fourth unit groups may cause the defective It is possible to replace the above-mentioned main penetrating electrode.

A semiconductor device having repairable penetrating electrodes according to an embodiment of the present invention includes first and second unit groups including main penetrating electrodes and spare penetrating electrodes. An input node and an output node corresponding to the first unit group are connected to the spare through electrodes in the first and second unit groups and the main through electrode in the second unit group, Wherein when a failure occurs in the main penetrating electrode in the group, any one of the spare penetrating electrodes in the first and second unit groups and the main penetrating electrode in the second unit group, Replace the electrode to deliver the signal. Thereby, a semiconductor device having a repairable penetrating electrode with improved repair efficiency and minimized signal shifting can be provided.

1 is a view for explaining a through electrode according to an embodiment of the present invention.
2A and 2B are views for explaining a semiconductor device having a repairable through electrode according to an embodiment of the present invention.
3 is a view for explaining a semiconductor device having repairable penetrating electrodes according to the first embodiment of the present invention.
4 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a second embodiment of the present invention.
5 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a third embodiment of the present invention.
6 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a fourth embodiment of the present invention.
7 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a fifth embodiment of the present invention.
8 is a view for explaining a semiconductor device having a repairable penetrating electrode according to the sixth embodiment of the present invention.
9 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a seventh embodiment of the present invention.
10 is a view for explaining a semiconductor device having repairable penetrating electrodes according to an eighth embodiment of the present invention.
11 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a ninth embodiment of the present invention.
12 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a tenth embodiment of the present invention.
13 is a view for explaining a semiconductor device having repairable penetrating electrodes according to an eleventh embodiment of the present invention.
14 is a view for explaining a grouping method of a semiconductor device having a repairable through electrode according to the first embodiment of the present invention.
15 is a view for explaining a grouping method of a semiconductor device having repairable through electrodes according to a second embodiment of the present invention.
16 is a block diagram briefly showing an example of an electronic system including a semiconductor element having repairable penetrating electrodes based on the technical idea of the present invention.
17 is a block diagram schematically showing an example of a memory card including a semiconductor element having a repairable penetrating electrode based on the technical idea of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical spirit of the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments disclosed herein are provided so that the disclosure can be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.

In this specification, when an element is referred to as being on another element, it may be directly formed on another element, or a third element may be interposed therebetween. Further, in the drawings, the thicknesses of the films and regions are exaggerated for an effective explanation of the technical content.

Also, while the terms first, second, third, etc. in the various embodiments of the present disclosure are used to describe various components, these components should not be limited by these terms. These terms have only been used to distinguish one component from another. Thus, what is referred to as a first component in any one embodiment may be referred to as a second component in another embodiment. Each embodiment described and exemplified herein also includes its complementary embodiment. Also, in this specification, 'and / or' are used to include at least one of the front and rear components.

The singular forms "a", "an", and "the" include plural referents unless the context clearly dictates otherwise. It is also to be understood that the terms such as " comprises "or" having "are intended to specify the presence of stated features, integers, Should not be understood to exclude the presence or addition of one or more other elements, elements, or combinations thereof. Also, in this specification, the term "connection " is used to include both indirectly connecting and directly connecting a plurality of components.

In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

Also, in this specification, "correspondence" is intended to describe the relationship between input and output nodes, unit groups, and penetrating electrodes. For example, in FIG. 3, the first group first input node 111a 1 unit group 110 and does not correspond to the second and third unit groups 120 and 130 and the first group first input node 111a corresponds to the first group first main through electrode 111 And does not correspond to the other main through electrodes 112, 121, 122, 131 and 132.

1 is a view for explaining a through electrode according to an embodiment of the present invention.

Referring to FIG. 1, a first semiconductor substrate 10 and a second semiconductor substrate 20 are provided on the first semiconductor substrate 10. The first semiconductor substrate 10 and the second semiconductor substrate 20 may each include a semiconductor element (for example, a memory, a logic circuit, a transistor, and the like) and a wiring.

A first penetrating electrode 12 passing through the first semiconductor substrate 10 may be provided. A first pad (14) may be provided on the first penetrating electrode (12). The first pad 14 may be provided on one surface of the first semiconductor substrate 10 adjacent to the second semiconductor substrate 20.

A second penetrating electrode 22 penetrating the second semiconductor substrate 20 may be provided. A second pad (24) may be provided on the second penetrating electrode (22). The second pad 24 may be provided on one surface of the second semiconductor substrate 20 adjacent to the first semiconductor substrate 10.

A bumper (30) may be provided between the first pad (14) and the second pad (24). The first semiconductor substrate 10 and the second semiconductor substrate 20 are electrically connected to the first and second penetrating electrodes 12 and 22, the first and second pads 14 and 24, (30). &Lt; / RTI >

Defects may occur in the first and second penetrating electrodes 12 and 22 during the manufacturing process of the semiconductor device shown in FIG. 1 or during the production of the semiconductor device shown in FIG. 1 or in use. In this case, it is necessary to replace the first and second penetrating electrodes 12 and 22 in which defects are generated by providing extra penetrating electrodes in addition to the first and second penetrating electrodes 12 and 22.

2A and 2B are views for explaining a semiconductor device having a repairable through electrode according to an embodiment of the present invention.

2A, a semiconductor device having repairable penetrating electrodes according to an embodiment of the present invention includes a unit penetrating electrode group including a signal transfer region (STR) and a repair region (RR) UPEG, Unit Penetration Electrode Group). The unit electrode group UPEG may be provided in plurality. According to one embodiment, the unit electrode group UPEG may include one signal transmission region STR and one recovery region RR.

The signal transmission region STR may include a main penetration electrode passing through the semiconductor substrate. The main penetrating electrode can carry signals between stacked semiconductor substrates, as described with reference to Fig. According to an embodiment, each of the signal transmission regions STR may include the same number of the main through electrodes as the plurality of the main through electrodes, but may include the same number of the main through electrodes. Alternatively, according to another embodiment, each of the signal transmission regions STR may include a different number of the main through electrodes.

The recovery region RR may include a spare penetration electrode through the semiconductor substrate. The spare through electrode may transmit a signal between the stacked semiconductor substrates in place of the main through electrode when a defect is generated in the main through electrode. The recovery region RR may include a plurality of the spare through electrodes, but may include a number of the spare through electrodes less than the number of the main through electrodes included in the signal transmission region STR.

The recovery area RR may be disposed between the signal transmission areas STR. According to one embodiment, the signal transmission areas STR located on both sides of the recovery area RR may share the recovery area RR located between the signal transmission areas STR. In other words, in the case where a failure occurs in the main penetrating electrode of the signal transmission regions STR located on both sides of the recovery region RR, the recovery region RR may be connected to the spare through- The signal can be transmitted by replacing the main through electrode in which the defect has occurred. As a result, the repair efficiency against defective penetrating electrodes can be increased.

For example, when a first recovery region is located between the first signal transfer region and the second signal transfer region, and a failure occurs in the main through electrode of the first and second signal transfer regions, The spare through electrodes may replace the main through electrodes of the first and second signal transmitting regions where the defects are generated. Accordingly, the spare through electrode of the first recovery area transfers a signal, and the defect can be recovered.

The recovery region RR may include a first recovery region disposed on one side of the first signal transfer region and a second recovery region disposed on the other side of the first signal transfer region. In this case, if defects occur in the main through electrodes of the first signal transfer area, the spare through electrodes of the first and second recovery areas are electrically connected to the main signal transmitting area of the first signal transmitting area, The electrodes can be replaced to transmit signals.

In addition, when the main through electrodes included in the unit through electrode group UPEG are shared with each other and a failure occurs in the main through electrode included in the unit through electrode group UPEG, The main penetrating electrode included in the UPEG may transfer a signal between the stacked semiconductor substrates in place of the main penetrating electrode where the failure occurs. As a result, the repair efficiency can be improved and the signal shift can be minimized.

2A, the restoration region RR is disposed on the right side of the signal transmission region STR in the unit electrode group UPEG. However, as shown in FIG. 2B, the signal transmission region STR The unit through electrode group UPEG can be defined by arranging the recovery region RR on the left side of the unit through electrode group UPG.

Hereinafter, a semiconductor device having repairable penetrating electrodes according to various embodiments of the present invention will be described.

3 is a view for explaining a semiconductor device having repairable penetrating electrodes according to the first embodiment of the present invention.

Referring to FIG. 3, a semiconductor device having repairable penetrating electrodes according to the first embodiment of the present invention includes input nodes 111a, 112a, 121a, 122a, 131a, and 132a, input nodes 111b 112b, 121b, 122b, 131b, and 132b, and output electrodes, and through electrodes 111, 112, 121, 122, 131, 132, 211, 221, and 231.

The through electrodes 111, 112, 121, 122, 131, 132, 211, 221 and 231 are connected to the input nodes and the output nodes, When the main through electrodes 111, 112, 121, 122, 131 and 132 and the main through electrodes 111, 112, 121, 122, 131 and 132 are defective, the main through electrodes 111 Through electrodes 211, 221, and 231 that replace the electrodes 112, 121, 122, 131, and 132, respectively.

The main through electrodes 111, 112, 121, 122, 131 and 132 and the spare through electrodes 211, 221 and 231 adjacent to each other can form unit groups 110, 120 and 130 . Specifically, the first unit group 110 may include a first group first main penetrating electrode 111, a first group second main penetrating electrode 112, and a first spare penetrating electrode 211, The second unit group 120 may include a second group first main penetrating electrode 121, a second group second main penetrating electrode 122, and a second spare penetrating electrode 221, The group 130 may include a third group first main penetrating electrode 131, a third group second main penetrating electrode 132, and a third spare penetrating electrode 231. The third unit group 130 may be spaced apart from the second unit group 120 with the first unit group 110 therebetween, as shown in FIG.

In FIG. 3, one spare through-hole electrode 211, 221, 231 is shown as being arranged in one unit group, but a plurality of spare through-electrode groups may be arranged in one unit group.

The input nodes and the output nodes may be provided in the same number as the number of the main through electrodes 111, 112, 121, 122, 131, and 132. Each of the input nodes and the output nodes includes nine through electrodes 111, 112, 121, 122, 131, 132, 211, 221, and 231, respectively. Alternatively, unlike the case shown in FIG. 3, it can be understood that four or fewer than six through electrodes can be connected.

Each of the input nodes and each of the output nodes are connected to the main through electrodes 111, 112, 121, 122, 131 of the unit groups 110, 120, , 132, respectively.

The input nodes and the output nodes correspond to the corresponding main through electrodes 111, 112, 121, 122, 131 and 132, the corresponding unit groups 110, 120, The spare through electrodes 211, 221 and 231 in the corresponding unit groups 110, 120 and 130, and the spare through electrodes 211, 221 and 231 in the unit groups 110, 112, 121, 122, 131, and 132 in the groups 110, 120, and 130, respectively. Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the first input and output nodes 111a and 111b corresponding to the first input and output nodes 111a and 111b, The main penetrating electrode 111, and the second main penetrating electrode 112 in the first unit group 110. The first spare through-hole electrode 211 in the first unit group 110, the third spare through-electrode 231 in the third unit group 130, and the third spare through-electrode 231 in the third unit group 130, 3 group second main penetrating electrode 132. The second main through-

According to one embodiment, among the input nodes and the output nodes corresponding to one unit group, the input node and the output node disposed on one side of the one unit group can be connected to the main through electrode of the other unit group adjacent to the one side And the input node and the output node disposed on the other side of the one unit group may be connected to the main through electrode of another unit group adjacent to the other side. Specifically, for example, the first group first input and output nodes 111a and 111b disposed adjacent to the third unit group 130 in the first unit group 110 are connected to the third unit group 130, (132) of the first electrode (130). The first group second input and output nodes 112a and 112b disposed adjacent to the second unit group 120 in the first unit group 110 are connected to the second unit group 120 in the second unit group 120, And may be connected to the main penetrating electrode 121.

The input nodes and the output nodes are connected to the corresponding main through electrodes 111, 112, 121, and 122 in the corresponding unit groups 110, 120, 111, 112, 121, 122, 131, and 132 that are not corresponding to the main through electrodes 131, 132, and 132, respectively. Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the first group of first main through electrodes 111, 1 group second main penetrating electrode 112, as shown in FIG.

The first grouped first and second main through electrodes 111 and 112, the first spare through electrode 211, and the second group first and second main through electrodes 121 and 122, The first group first main penetrating electrode 111 is replaced by the third group second main penetrating electrode 132 and the first group second main penetrating electrode 112 is replaced by the third group second main penetrating electrode 132, The second group first main through electrode 121 is replaced by the second spare through electrode 221 and the second group second main through electrode 122 is replaced by the spare through electrode 231, Is replaced by a main penetrating electrode (not shown) in another unit group disposed on the right side of the second unit group 120, and the third group, which replaces the first group first main penetrating electrode 111, 2 main penetrating electrode 132 is connected to a spare through electrode (not shown) in another unit group disposed on the left side of the third unit group 130 ). &Lt; / RTI >

That is, as described above, even if failure occurs in the five through electrodes 111, 112, 211, 121, and 122 arranged consecutively, the main through electrode and the spare through electrode are shared among the other unit groups , The input nodes and the output nodes are connected to at least two spare through electrodes, so that the repair efficiency can be improved and the signal shifting can be minimized.

In other words, according to the embodiment of the present invention, in addition to the corresponding main penetrating electrode, the input nodes and the output nodes are connected to the spare through electrode of the corresponding unit group, the spare through electrode of the other unit group not corresponding thereto, And may be connected to the main penetrating electrode of another unit group. Thus, when a defect occurs in the corresponding main through electrode, the spare through electrode of the corresponding unit group, the spare through electrode of the other unit group, and the main through electrode of the other unit group are electrically connected to each other, The signal can be transmitted by replacing the main penetrating electrode. This can provide a semiconductor device having repairable penetrating electrodes, in which the repair efficiency of the penetrating electrode is improved and the signal shift is reduced.

In contrast to the first embodiment of the present invention described above, according to the second embodiment of the present invention, the input nodes and the output nodes are not connected to the unmatched main penetrating electrode in the corresponding unit group, Through electrodes of other unit groups disposed on both sides of the main unit. Hereinafter, with reference to FIG. 4, a semiconductor device having repairable penetrating electrodes according to a second embodiment of the present invention will be described.

4 is a view for explaining a repairable semiconductor device according to a second embodiment of the present invention.

4, in contrast to the semiconductor device having the repairable penetrating electrode according to the first embodiment of the present invention described with reference to FIG. 3, according to the second embodiment of the present invention, the input nodes And the output nodes are connected to the corresponding one of the main through electrodes 111, 112, 121, 122, 131 and 132, the corresponding unit groups 110, 120 and 130, The electrodes 211, 221 and 231, the spare through electrodes 211, 221 and 231 in the unit groups 110, 120 and 130, and the corresponding unit groups 110, 120 and 130 The main through electrodes 111, 112, 121, 122, 131 and 132 in the unit groups 110, 120 and 130 located on both sides of the main unit 110, 120, and 130, respectively.

Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the corresponding first group first main through electrode 111, The first spare through-hole electrode 211 in the unit group 110, the third spare through-electrode 231 in the third unit group 130 not corresponding to the first spare through-hole electrode 231, The second group first main penetrating electrode 121 and the third group first main penetrating electrode 131 in the second and third unit groups 120 and 130 located in the first group. Accordingly, when a defect occurs in the first group first main penetrating electrode 111, the first spare penetrating electrode 211, the third spare penetrating electrode 231, the second group first main penetrating electrode 111, The first group main through electrode 121 and the third group first main through electrode 131 may replace the first group first main through electrode 111 in which a failure occurs and transmit a signal.

According to the third embodiment of the present invention, unlike the embodiments of the present invention described above, three main through electrodes are provided in each unit group, and the number of the through electrodes connected to the input nodes and the output nodes is four have. Hereinafter, with reference to FIG. 5, a semiconductor device having repairable penetrating electrodes according to a third embodiment of the present invention will be described.

5 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a third embodiment of the present invention.

5, according to the third embodiment of the present invention, unlike the semiconductor device having the repairable penetrating electrode according to the first embodiment of the present invention described with reference to FIG. 3, the unit groups 110, The first group third main through electrode 113, the second group third main through electrode 123 and the third group third main through electrode 133 may be further disposed in the first through third groups 120 and 130, respectively.

The input nodes 111a, 112a, 113a, 121a, 122a, 123a, 131a, 132a and 133a and the output nodes 111b, 112b, 113b, 121b, 122b, 123b, 131b, 132b, 133b, Output nodes in the corresponding unit groups 110, 120, and 130 correspond to the main through electrodes 111, 112, 113, 121, 122, 123, 131, 132, The spare through electrodes 211, 221 and 231 in the corresponding unit groups 110, 120 and 130 and the unit groups 110, 120 and 130, 112, 113, 121, 122, 123, 131, 132, 133 in the first and second electrodes 130,

Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the corresponding first group first main through electrode 111, The first spare through-hole electrode 211 of the unit group 110, the third spare through-electrode 231 of the third unit group 130 not corresponding to the first spare through-hole electrode 231, and the corresponding one of the first unit group 110 And may be connected to the third group second main through electrode 132 of the third unit group 130 disposed on one side. Accordingly, when a failure occurs in the first group first main penetrating electrode 111, the first spare penetrating electrode 211, the third spare penetrating electrode 231, and the third group second main penetrating electrode 111, Any one of the electrodes 132 may replace the first group first main through electrode 111 in which a failure occurs and transmit a signal.

3, among the input nodes and the output nodes corresponding to one unit group, the input node and the output node disposed on one side of the one unit group are connected to one side And the input node and the output node disposed on the other side of the one unit group may be connected to the main through electrode of another unit group adjacent to the other side. Specifically, for example, the first group first input and output nodes 111a and 111b disposed adjacent to the third group of fraud 130 in the first unit group 110 and the first group first input and output nodes 111a and 111b, The two input and output nodes 112a and 112b may be connected to the third group second and third main through electrodes 132 and 133 of the third unit group 130, respectively. The first group third input and output nodes 113a and 113b disposed adjacent to the second unit group 120 in the first unit group 110 are connected to the second input / And may be connected to the second group first main through electrode 121.

According to the fourth embodiment of the present invention, unlike the third embodiment of the present invention described above, the input nodes and the output nodes are not connected to the unmatched main penetrating electrode in the corresponding unit group, Through electrodes of other unit groups disposed on both sides of the main unit. Hereinafter, with reference to FIG. 6, a semiconductor device having a repairable penetrating electrode according to a fourth embodiment of the present invention will be described.

6 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a fourth embodiment of the present invention.

Referring to FIG. 6, according to a fourth embodiment of the present invention, unlike the semiconductor device having the repairable penetrating electrode according to the third embodiment of the present invention described with reference to FIG. 5, ) And the output nodes are connected to the corresponding main through electrodes 111, 112, 113, 121, 122, 123, 131, 132, 133, 221, 231) in the unit groups (110, 120, 130) that are not matched with the spare through electrodes (211, 221, 231) 112, 113, 121, 122, 123, 131, 132, 133 in the unit groups 110, 120, 130 located on both sides of the electrodes 110, 120, .

According to the fifth embodiment of the present invention, unlike the embodiments of the present invention described above, four main through electrodes are provided in each unit group, and the number of through electrodes connected to the input nodes and the output nodes is five have. Hereinafter, with reference to FIG. 7, a semiconductor device having a repairable penetrating electrode according to a fifth embodiment of the present invention will be described.

7 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a fifth embodiment of the present invention.

Referring to FIG. 7, unlike a semiconductor device having repairable penetrating electrodes according to the first embodiment of the present invention described with reference to FIG. 3, in the unit groups 110, 120 and 130, The fourth main through electrode 114, the second group fourth main through electrode 124, and the third group fourth main through electrode 134 may be further disposed.

The input nodes 111a, 112a, 113a, 114a, 121a, 122a, 123a, 124a, 131a, 132a, 133a, 134a, and the output nodes 111b, 112b, 113b, 114b, 121b, 122b, 123b, 131b, 132b, 133b, 134b, and output nodes are connected to the corresponding main through electrodes 111, 112, 113, 114, 121, The spare through electrodes 211, 221 and 231 in the corresponding unit groups 110, 120 and 130 and the spare electrodes 211 and 221 in the unit groups 110, 221, and 231, respectively. Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the corresponding first group first main through electrode 111, Through electrodes 211 of the first unit group 110 and the third spare through electrodes 231 of the third unit group 230 disposed on one side of the corresponding first unit group 110 .

In addition, some of the input nodes and the output nodes are further connected to main unconnected main through electrodes in the corresponding unit group and main unconnected electrodes in the unit group, An input node and another part of the output nodes may be connected to main through electrodes in unit groups disposed on both sides of the corresponding unit group. Specifically, for example, in the first unit group 110, the first group first and fourth input and output nodes 111a, 111b, 114a, and 114b disposed on the edge side are connected to the first unit The first group of first through fourth electrodes 114 and 111 in the group 110 are connected to the first group of fourth and first main through electrodes 114 and 111 and the third group of the third and second unit groups 130 and 120, 2 main through-hole electrode 132 and the second group third main through electrode 123, respectively. The first group second and third input and output nodes 112a, 112b, 113a and 113b disposed at the center in the first unit group 110 are arranged on both sides of the first unit group 110 The second group first and second main through electrodes 121 and 122 and the third group third and fourth main through electrodes (120 and 130) in the disposed second and third unit groups 120 and 130 133, and 134, respectively.

According to the sixth embodiment of the present invention, unlike the above-described fifth embodiment of the present invention, the input nodes and the output nodes are not connected to the unmatched main penetrating electrode in the corresponding unit group, Through electrodes of other unit groups disposed on both sides of the main unit. Hereinafter, with reference to FIG. 8, a semiconductor device having a repairable penetrating electrode according to the sixth embodiment of the present invention will be described.

8 is a view for explaining a semiconductor device having a repairable penetrating electrode according to the sixth embodiment of the present invention.

Referring to FIG. 8, according to the sixth embodiment of the present invention, unlike the semiconductor device having the repairable penetrating electrode according to the fifth embodiment of the present invention described with reference to FIG. 7, the input nodes And the output nodes are connected to the corresponding main through electrodes 111, 112, 113, 114, 121, 122, 123, 124 131, 132, 133, 134, The spare through electrodes 211, 221, 231 in the unit groups 110, 120, 130, the spare through electrodes 211, 221, 231 in the unit groups 110, The main through electrodes 111, 112, 113, 114, 121, 122, 123, 124, 131 in the unit groups 110, 120, 130 located on both sides of the corresponding unit group 110, , 132, 133, 134).

According to the seventh embodiment of the present invention, unlike the embodiments of the present invention described above, five main through electrodes are provided in each unit group, and the number of through electrodes connected to the input nodes and the output nodes is five have. Hereinafter, with reference to FIG. 9, a semiconductor device having a repairable penetrating electrode according to a seventh embodiment of the present invention will be described.

9 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a seventh embodiment of the present invention.

9, according to the seventh embodiment of the present invention, unlike the semiconductor device having the repairable penetrating electrode according to the sixth embodiment of the present invention described with reference to FIG. 8, the unit groups 110, The first group fifth main penetrating electrode 115, the second group fourth main penetrating electrode 125 and the third group fifth main penetrating electrode 135 may be further disposed in the first through third groups 120 and 130, respectively.

The input nodes 111a, 112a, 113a, 114a, 115a, 121a, 122a, 123a, 124a, 125a, 131a, 132a, 133a, 134a, 135a, and the output nodes 111b, 112b, 113b, 114, 115, 121, 122 (corresponding to the main through electrodes 111, 112, 113, 114, 115, 121, 122 , And the corresponding spare through electrodes (211, 221, 231) in the corresponding unit groups (110, 120, 130) May be connected to the spare electrodes 211, 221, 231 in the unit groups 110, 120, 130. Specifically, for example, the first input and output nodes 111a and 111b of the first unit group 110 are connected to the corresponding first group first main through electrode 111, Through electrodes 211 of the first unit group 110 and the third spare through electrodes 231 of the third unit group 230 disposed on one side of the corresponding first unit group 110 .

In addition, some of the input nodes and the output nodes are further connected to main unconnected main through electrodes in the corresponding unit group and main unconnected electrodes in the unit group, An input node and another part of the output nodes may be connected to unmatched main penetration electrodes in the corresponding unit group.

Specifically, for example, in the first unit group 110, the first group of first, second, fourth, and fifth input and output nodes (111a, 111b, 112a, 112b, 114a, 114b, 115a, and 115b are electrically connected to corresponding non-corresponding main through electrodes in the corresponding first unit group 110 and non-corresponding main through electrodes in the corresponding second and third unit groups 120, Lt; / RTI > More specifically, the first input and output nodes 111a and 111b are connected to the first group third main through electrode 113 in the first unit group 110 and the second group main electrode 113 in the third unit group 130, Third group fourth main penetrating electrode 134. In addition, The first group third input and output nodes 113a and 113b disposed at the center in the first unit group 110 are connected to the first group first and second groups 113a and 113b in the first unit group 110, And the main through electrodes 121 to 125 and 131 to 131 in the second and third unit groups 120 and 130, which are not the first unit group 110, are connected to the main through electrodes 111 and 115, 135, respectively.

According to the eighth embodiment of the present invention, unlike the seventh embodiment of the present invention described above, the input nodes and the output nodes are not connected to the non-corresponding main penetrating electrode in the corresponding unit group, Through electrodes of other unit groups disposed on both sides of the group. 10, a semiconductor device having a repairable penetrating electrode according to an eighth embodiment of the present invention will be described.

10 is a view for explaining a semiconductor device having repairable penetrating electrodes according to an eighth embodiment of the present invention.

Referring to FIG. 10, according to an eighth embodiment of the present invention, unlike the semiconductor device having the repairable penetrating electrode according to the seventh embodiment of the present invention described with reference to FIG. 9, the input nodes And the output nodes are connected to the corresponding main through electrodes 111, 112, 113, 114, 115, 121, 122, 123, 124, 125, 131, 132, 133, The spare through electrodes 211, 221 and 231 in the corresponding unit groups 110, 120 and 130 and the spare through electrodes 211 and 221 in the unit groups 110, And the main through electrodes 111, 112, 113, 114, 115, and 115 in the unit group 110, 120, and 130 located on both sides of the corresponding unit group 110, 121, 122, 123, 124, 125, 131, 132, 133, 134,

According to the ninth embodiment of the present invention, unlike the embodiments of the present invention described above, the number of the main through electrodes disposed in each unit group may be different from each other. Hereinafter, with reference to FIG. 11, a semiconductor device having repairable penetrating electrodes according to a ninth embodiment of the present invention will be described.

11 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a ninth embodiment of the present invention.

Referring to FIG. 11, the unit groups 110, 120, 130, and 140 included in the semiconductor device having repairable through electrodes according to the ninth embodiment of the present invention include a plurality of unit through- (111, 112, 113, 121, 122, 123, 124, 131, 132, 133, 141, 142, 143, 144). More specifically, the first and third unit groups 110 and 130 may include three main through electrodes 111 to 113 and 131 to 133, The first through holes 120 and 140 may include four main through electrodes 121 through 124 and 141 through 144, respectively.

The input and output nodes 111a to 113a, 111b to 113b, and 111b to 113b corresponding to the first and third unit groups 110 and 130 including the three main through electrodes 111 to 113 and 131 to 133, 131a to 133a and 131b to 133b are connected to corresponding main through electrodes 111 to 113 and 131 to 133 in the corresponding first and third unit groups 110 and 130, The first and third spare through electrodes 211 and 231 in the third unit groups 110 and 130 and the second spare through electrodes 221 in the second unit group 120, Lt; / RTI >

Among the first and third group input / output nodes 111a to 113a, 111b to 113b, 131a to 133a, and 131b to 133b, a portion disposed on the edge side may correspond to an unmatched main penetration The electrode, and the main penetrating electrode in the unit group that is not matched. A portion of the first and third input and output nodes 111a to 113a, 111b to 113b, 131a to 133a, and 131b to 133b disposed at the center is connected to the main through electrodes in the unit group . Specifically, for example, the third group first input and output nodes 131a and 131b disposed on the edge side of the third group input and output nodes 131a to 133a and 131b to 133b correspond to the corresponding The third group third main penetrating electrode 133 in the third unit group 130 and the second group third main penetrating electrode 123 of the second unit group 120 not corresponding to each other . The third group of second input and output nodes 132a and 132b disposed at the center among the third group input and output nodes 131a to 133a and 131b to 133b is connected to the second unit group The second group fourth main penetrating electrode 124 of the fourth unit group 120 of the first unit group 120 and the fourth main first penetrating electrode 141 of the fourth unit group 140 not corresponding to each other.

The input and output nodes 121a to 124a, 121b to 124b, and 121b to 124b corresponding to the second and fourth unit groups 120 and 140 including the four main through electrodes 121 to 124 and 141 to 144, 141a to 144a and 141b to 144b are connected to corresponding main through electrodes 121 to 124 and 141 to 144 in the corresponding second and fourth unit groups 120 and 140, And the second and fourth unit groups in the corresponding second and fourth unit groups 120 and 140 in the fourth unit groups 120 and 140, The fourth spare through electrodes 221 and 241 and the first and third spare through electrodes 211 and 231 in the first and third unit groups 110 and 130 which do not correspond to each other.

A part of the second and fourth group input / output nodes 121a to 124a, 121b to 124b, 141a to 144a, and 141b to 144b disposed at one side is connected to the main through electrode in the unit group adjacent to the one side, And another portion disposed on the other side may be connected to the main through electrode in the unit group adjacent to the other side. Specifically, for example, the second group first and second input and output nodes 121a, 121b, 122a, and 122b disposed on one side in the second unit group 120 are connected to the second unit group 120 And the main through electrodes 112 and 113 in the first unit group 110 adjacent to the one side of the first unit group 110. The second group third and third input and output nodes 123a, 123b, 124a and 124b disposed on the other side of the second unit group 120 are connected to the other side of the second unit group 120 May be connected to the main through electrodes (131, 132) in the adjacent second unit group (120).

12 is a view for explaining a semiconductor device having repairable penetrating electrodes according to a tenth embodiment of the present invention.

12, according to a tenth embodiment of the present invention, unlike the semiconductor device having repairable penetrating electrodes according to the ninth embodiment of the present invention described with reference to FIG. 11, the three main through electrodes The input and output nodes 111a to 113a, 111b to 113b, 131a to 133a, and 131b to 133b corresponding to the first and third unit groups 110 and 130 including the first and third unit groups 111 to 113 and 131 to 133, Corresponding to the corresponding main through electrodes 111 to 113 and 131 to 133 in the corresponding first and third unit groups 110 and 130 and the corresponding second and fourth unit groups Through the first through third electrodes (122, 123, 124, 141, 142, 143) in the corresponding first and third unit groups (110, 130) (211, 231), and the second spare through electrodes (221) in the second unit group (120) which do not correspond.

The input and output nodes 121a to 124a, 121b to 124b, and 121b to 124b corresponding to the second and fourth unit groups 120 and 140 including the four main through electrodes 121 to 124 and 141 to 144, 141a to 144a and 141b to 144b are connected to corresponding main through electrodes 121 to 124 and 141 to 144 in the corresponding second and fourth unit groups 120 and 140, The first and third spare through electrodes 221 and 241 in the fourth unit groups 120 and 140 and the first and second spare through electrodes in the first and third unit groups 110 and 130, 3 spare through electrodes 211 and 231, respectively.

A portion disposed on the edge side of the second and fourth group input and output nodes 121a to 124a, 121b to 124b, 141a to 144a, and 141b to 144b, Electrode, and a non-corresponding unit group, and another portion disposed at the center may be connected to the main through electrodes in the non-corresponding unit group. Specifically, for example, the second group first input and output nodes 121a and 121b disposed on the edge side in the second unit group 120 are connected to the second unit group 120 in the second unit group 120, The group fourth main penetrating electrode 124 and the first group first main penetrating electrode 111 in the first unit group 110 not corresponding to each other. Also, the second group second input and output nodes 122a and 122b disposed at the center in the second unit group 120 are connected to the first group second main through hole 122a in the first unit group 110, Electrode 112 and the third group first main penetrating electrode 131 in the third unit group 130 which do not correspond to each other.

Unlike the tenth embodiment of the present invention described above, according to the eleventh embodiment of the present invention, a main penetrating electrode may be further disposed in each of the unit groups. Hereinafter, with reference to FIG. 13, a semiconductor device having repairable penetrating electrodes according to an eleventh embodiment of the present invention will be described.

13 is a view for explaining a semiconductor device having repairable penetrating electrodes according to an eleventh embodiment of the present invention.

13, according to the eleventh embodiment of the present invention, unlike the semiconductor device having repairable penetrating electrodes according to the tenth embodiment of the present invention described with reference to FIG. 12, the first and third units The groups 110 and 130 may include four main through electrodes 111 to 114 and 131 to 134 and the second and fourth unit groups 120 and 140 may include five main Through electrodes 121 to 125 and 141 to 145, respectively.

The input and output nodes 111a to 113a, 111b to 113b (corresponding to the first and third unit groups 110 and 130) including the four main through electrodes 111 to 114 and 131 to 134 131a to 133a and 131b to 133b are connected to corresponding main through electrodes 111 to 114 and 131 to 134 in the corresponding first and third unit groups 110 and 130, And the first and third spare electrodes 211 and 231 in the third unit groups 110 and 130 and the second and fourth spare through holes 211 and 231 in the second and fourth unit groups 120 and 140, Through electrodes 221 and 241, respectively.

A part of the first and third group input / output nodes 111a to 113a, 111b to 113b, 131a to 133a, and 131b to 133b disposed on the edge side may correspond to a corresponding one of the main unit input / Electrode, and a non-corresponding unit group, and another portion disposed at the center may be connected to the main through electrodes in the non-corresponding unit group. Specifically, for example, the third group first input and output nodes 131a and 131b disposed on the edge side in the third unit group 130 are connected to the third unit group 130, Group first main penetrating electrode 131 and the second group third main penetrating electrode 123 in the second unit group 120 not corresponding to the first main penetrating electrode 131. [ The third group second input and output nodes 132a and 132b disposed at the center in the third unit group 130 are connected to the second group fourth main through hole 132b in the second unit group 120, Electrode 124 and the fourth group first main penetrating electrode 141 in the fourth unit group 140 not corresponding thereto.

(121a-125a, 121b-125b) corresponding to the second and fourth unit groups 120, 140 including the five main through electrodes 121 to 125, 141 to 145 141a to 145a and 141b to 145b correspond to the corresponding main through electrodes 121 to 125 and 141 to 145 in the corresponding second and fourth unit groups 120 and 140, And the second and fourth spare electrodes 221 and 241 in the fourth unit groups 120 and 140 and the first and third spare units 221 and 241 in the first and third unit groups 110 and 130, Through electrodes 211 and 231, respectively.

A portion of the second and fourth group input / output nodes 121a to 125a, 121b to 125b, 141a to 145a, and 141b to 145b disposed on the edge side may correspond to the non-corresponding main through- Electrode, and a non-corresponding unit group, and another portion disposed at the center may be connected to the main through electrodes in the non-corresponding unit group. Specifically, for example, the second group first input and output nodes 121a and 121b disposed on the edge side in the second unit group 120 are connected to the second unit group 120 in the second unit group 120, The group fourth main penetrating electrode 124, and the first group second main penetrating electrode 112 in the first unit group 110 which do not correspond to each other. Also, the second group third input and output nodes 123a and 123b disposed at the center in the second unit group 120 are connected to the first group fourth main through hole (not shown) in the first unit group 110, The electrode 114 and the third group first main penetrating electrode 131 in the third unit group 130 which do not correspond to each other.

As described above, a semiconductor device having repairable penetrating electrodes according to embodiments of the present invention is described. In the embodiments of the present invention described above, when defects occur in the main through electrode corresponding to the input and output nodes, the other main through electrode and / or spare through electrode except for the corresponding main through electrode are connected to the main through electrode To transmit the signal.

The repairable through electrodes according to the embodiments of the present invention described above are arranged two-dimensionally in an in-plane view, and the unit groups sharing the main through electrodes and the spare through electrodes are closed loop ), So that the number of spare through electrodes can be minimized. 14 and 15, a grouping of repairable penetrating electrodes according to embodiments of the present invention will be described.

14 is a view for explaining a grouping method of a semiconductor device having a repairable through electrode according to the first embodiment of the present invention.

Referring to FIG. 14, a plurality of main through electrodes P1 to P24 and spare through electrodes S1 to S6 are provided. The penetrating electrodes P1 to P24 and S1 to S6 are defined as first to sixth unit groups G1 to G6 so as to efficiently repair the main penetrating electrode in which the defective unit is formed, The unit groups G1 to G6 sharing the penetrating electrodes P1 to P24 may be perforated to minimize the number of the unit groups G1 to S8.

Specifically, the first and second unit groups G1 and G2 may share the main through electrodes P1 to P8 and the spare through electrodes S1 to S2 with each other, The three unit groups G2 and G3 may share the main through electrodes P5 to P12 and the spare through electrodes S2 and S3 and the third and fourth unit groups G3, G4 may share the main through electrodes P9-P16 and the spare through electrodes S3 and S4 and the fourth and fifth unit groups G4 and G5 may share the main The fifth and sixth unit groups G5 and G6 may share the through electrodes P13 to P20 and the spare through electrodes S4 and S5 and the fifth and sixth unit groups G5 and G6 may share the main through electrodes P17 to P24 And the sixth and first unit groups G6 and G1 may share the main through electrodes P21 to P24 and the spare through electrodes < RTI ID = 0.0 > (S5, S6).

The through electrodes P1 and P24 may be shared and connected with each other in various ways, as described with reference to FIGS.

15 is a view for explaining a grouping method of a semiconductor device having repairable through electrodes according to a second embodiment of the present invention.

Referring to FIG. 15, a plurality of main through electrodes P1 to P32 and spare through electrodes S1 to S8 are provided. The penetrating electrodes P1 to P32 and S1 to S8 are defined as first to eighth unit groups G1 to G8 and efficiently repair the main penetrating electrode in which the defective unit is formed, The unit groups G1 to G8 sharing the penetrating electrodes P1 to P32 may be perforated to minimize the number of the unit groups G1 to S8.

Specifically, the first and third unit groups G1 and G3 can share the through electrodes P1 to P4, P9 to P12, S1 and S3 of each other, and the third and second unit groups G1 and G2 The second and fourth unit groups G2 and G4 may share the penetrating electrodes P5 to P8, The fourth and fifth unit groups G4 and G5 may share the penetrating electrodes P13 to P20, S4, and S5 of each other, The sixth and seventh unit groups G6 and G7 may share the penetrating electrodes P21 to P28, S6 and S7 of each other and the seventh and eighth unit groups G7 and G8 may share each other. And the eighth and first unit groups G8 and G1 may share the through electrodes P29 to P32, P1 to P4, S8 and S1 ). &Lt; / RTI >

14 and 15, unit groups can be defined in various ways such that two-dimensionally arranged through electrodes form a closed loop in order to minimize the number of spare through electrodes. To be clear to.

Further, in order to improve the repair efficiency of the penetrating electrode in which a defect occurs in the unit area, the distance between the groups in which the penetrating electrodes are shared and the distance between the penetrating electrodes belonging to the same group are distanced, .

16 is a block diagram briefly showing an example of an electronic system including a semiconductor element having repairable penetrating electrodes based on the technical idea of the present invention.

16, an electronic system 1100 according to an embodiment of the present invention includes a controller 1110, an I / O device 1120, a memory device 1130, an interface 1140, and a bus 1150, bus). The controller 1110, the input / output device 1120, the storage device 1130, and / or the interface 1140 may be coupled to each other via the bus 1150. The bus 1150 corresponds to a path through which data is moved.

The controller 1110 may include at least one of a microprocessor, a digital signal process, a microcontroller, and logic elements capable of performing similar functions. The input / output device 1120 may include a keypad, a keyboard, a display device, and the like. The storage device 1130 may store data and / or instructions and the like. The storage device 1130 may include at least one of the semiconductor devices having repairable penetrating electrodes disclosed in the embodiments of the present invention described above. Further, the storage device 1130 may further include other types of semiconductor memory devices (ex, a DRAM device, a flash memory device, and / or an SRAM device, etc.).

The interface 1140 may perform functions to transmit data to or receive data from the communication network. The interface 1140 may be in wired or wireless form. For example, the interface 1140 may include an antenna or a wired or wireless transceiver. Although not shown, the electronic system 1100 is an operation memory for improving the operation of the controller 1110, and may further include a high-speed DRAM and / or an esram.

The electronic system 1100 may be a personal digital assistant (PDA) portable computer, a web tablet, a wireless phone, a mobile phone, a digital music player a digital music player, a memory card, or any electronic device capable of transmitting and / or receiving information in a wireless environment.

17 is a block diagram schematically showing an example of a memory card including a semiconductor element having a repairable penetrating electrode based on the technical idea of the present invention.

Referring to FIG. 17, a memory card 1200 according to an embodiment of the present invention includes a storage device 1210. The memory device 1210 may include at least one of the semiconductor devices having repairable penetrating electrodes disclosed in the embodiments of the present invention described above. In addition, the storage device 1210 may further include other types of semiconductor memory devices (ex, a DRAM device, a flash device, and / or an SRAM device, etc.). The memory card 1200 may include a memory controller 1220 that controls the exchange of data between the host and the storage device 1210.

The memory controller 1220 may include a flushing unit 1222 that controls the overall operation of the memory card. In addition, the memory controller 1220 may include an SRAM 1221, which is used as an operation memory of the processing unit 1222. In addition, the memory controller 1220 may further include a host interface 1223 and a memory interface 1225.

The host interface 1223 may include a data exchange protocol between the memory card 1200 and a host. The memory interface 1225 can connect the memory controller 1220 and the storage device 1210. Further, the memory controller 1220 may further include an error correction block 1224 (Ecc).

The error correction block 1224 can detect and correct errors in data read from the storage device 1210. [ Although not shown, the memory card 1200 may further include a ROM device for storing code data for interfacing with a host. The memory card 1200 may be used as a portable data storage card. Alternatively, the memory card 1200 may be implemented as a solid state disk (SSD) capable of replacing a hard disk of a computer system.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the scope of the present invention is not limited to the disclosed exemplary embodiments. It will also be appreciated that many modifications and variations will be apparent to those skilled in the art without departing from the scope of the invention.

10, 20: semiconductor substrate
12, 22: through electrode
14, 24: pad
30: Bump
STR: Signal transfer area
RR; Recovery area
UPEG: Unit penetrating electrode group
111 to 115, 121 to 125, 131 to 135, and 141 to 145:
211, 221, 231, 241: Spare penetrating electrode
111a to 115a, 121a to 125a, 131a to 135a, 141a to 145a:
111b to 115b, 121b to 125b, 131b to 135b, 141b to 145b,
110, 120, 130, 140: unit group

Claims

Input nodes;
Output nodes; And
A unit group including main penetration electrodes for passing signals between the input nodes and the output nodes and penetrating the substrate, and spare penetration electrodes, ,
The spare through electrode is for repairing defects of the main through electrode,
Wherein the unit group includes a first unit group and a second unit group which are adjacent to each other,
Wherein the input node and the output node corresponding to the first unit group are connected directly to the spare electrodes in the first and second unit groups and the main through electrode in the second unit group,
When defects occur in the main penetrating electrode in the first unit group, any one of the spare penetrating electrodes in the first and second unit groups and the main penetrating electrode in the second unit group, And a repairable penetrating electrode including a signal passing through said main penetrating electrode in place of said main penetrating electrode.

The method according to claim 1,
Wherein the input node and the output node corresponding to the first unit group are connected to at least one main through electrode included in a unit group other than the first unit group, Device.

The method according to claim 1,
Wherein the unit group includes a third unit group spaced apart from the second unit group via the first unit group,
The input node and the output node corresponding to the first unit group and adjacent to the third unit group are connected to the main through electrode in the third unit group,
Wherein the input node and the output node corresponding to the first unit group and adjacent to the second unit group have a repairable penetrating electrode including being connected to the main penetrating electrode in the second unit group.

The method according to claim 1,
Wherein the unit group includes a third unit group spaced apart from the second unit group via the first unit group,
Wherein the input node and the output node corresponding to the first unit group have a repairable penetrating electrode including being connected to the main penetrating electrode in the second unit group and the main penetrating electrode in the third unit group A semiconductor device.

The method according to claim 1,
Wherein the input nodes and the output nodes corresponding to the same unit group have a repairable penetrating electrode which is connected to the same spare through electrodes.

The method according to claim 1,
Wherein the number of the main through electrodes in the first unit group and the number of the main through electrodes in the second unit group are different from each other.

Through electrodes and spare through electrodes arranged two dimensionally in an in plane view and passing through the substrate,
The spare through electrode is for repairing defects of the main through electrode,
First to fourth unit groups including a plurality of the main through electrodes and at least one spare through electrode are defined,
The first and second unit groups that are adjacent to and different from each other share the main through electrodes and the spare through electrodes, and the input node and the output node corresponding to the first unit group are connected to the main And the input node and the output node corresponding to the second unit group are directly connected to the main penetrating electrode and the spare penetrating electrodes in the first unit group,
The second and third unit groups that are adjacent to and different from each other share the main through electrodes and the spare through electrodes, and the input node and the output node corresponding to the second unit group are connected to the main And the input node and the output node corresponding to the third unit group are directly connected to the main penetrating electrode and the spare penetrating electrode in the second unit group,
The third and fourth unit groups that are adjacent to and different from each other share the main through electrodes and the spare through electrodes, and the input node and the output node corresponding to the third unit group are connected to the main And the input node and the output node corresponding to the fourth unit group are directly connected to the main penetrating electrode and the spare penetrating electrode in the third unit group,
The fourth and first unit groups that are adjacent to and different from each other share the main through electrodes and the spare through electrodes and the input node and the output node corresponding to the fourth unit group are connected to the main And wherein the input node and the output node corresponding to the first unit group are directly connected to the main penetrating electrode and the spare penetrating electrodes in the fourth unit group, A semiconductor device having a penetrating electrode.

8. The method of claim 7,
Wherein when any failure occurs in the main through electrode in the first unit group, any one of the main through electrodes or the spare through electrodes in the second and the fourth unit groups is electrically connected to the main through electrode And a repairable penetrating electrode.