KR101742384B1 - Resistance Random Access Memory Device and Method of manufacturing the same - Google Patents

Resistance Random Access Memory Device and Method of manufacturing the same Download PDF

Info

Publication number
KR101742384B1
KR101742384B1 KR1020150126064A KR20150126064A KR101742384B1 KR 101742384 B1 KR101742384 B1 KR 101742384B1 KR 1020150126064 A KR1020150126064 A KR 1020150126064A KR 20150126064 A KR20150126064 A KR 20150126064A KR 101742384 B1 KR101742384 B1 KR 101742384B1
Authority
KR
South Korea
Prior art keywords
resistance
electrode
tan
variable layer
inert
Prior art date
Application number
KR1020150126064A
Other languages
Korean (ko)
Other versions
KR20170029674A (en
Inventor
홍진표
김태윤
이아람
백광호
Original Assignee
한양대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 한양대학교 산학협력단 filed Critical 한양대학교 산학협력단
Priority to KR1020150126064A priority Critical patent/KR101742384B1/en
Publication of KR20170029674A publication Critical patent/KR20170029674A/en
Application granted granted Critical
Publication of KR101742384B1 publication Critical patent/KR101742384B1/en

Links

Images

Classifications

    • H01L45/04—
    • H01L45/12—
    • H01L45/1233—
    • H01L45/146—

Abstract

A resistance change memory element and a method of manufacturing the same are provided. The resistance-variable memory device includes an inert electrode, a resistance-variable layer disposed on the inert electrode, the resistance-variable layer having a state change due to the formation and disappearance of a metal filament, and an active electrode disposed on the resistance- x and TaN material having a structure, wherein X may be a 0.9 to 1.1. Therefore, the on / off current ratio can be greatly improved.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a resistance change memory device,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resistance change memory element and a method of manufacturing the same, and more particularly, to a resistance change memory element having a high on / off current ratio and a low off current level and a method of manufacturing the same.

Recently, the development of digital information communication and household appliances industry has led to limitations in research on devices based on conventional charge control. In order to overcome these limitations, new memory devices using phase change and magnetic field change are being studied. The information storage method of new memory devices which is under study uses the principle of changing the resistance of the material itself by inducing the change of the material state.

In a flash memory which is a representative element of a nonvolatile memory, a high operation voltage is required for programming and erasing data. Therefore, when scale down by a line width of 45 nm or less, a malfunction may occur due to interference between adjacent cells, and slow operation speed and excessive power consumption are problematic.

Magnetic RAM (MRAM), another nonvolatile memory, has some problems in commercialization due to complicated manufacturing process and multi-layer structure, small margin of read / write operation. Therefore, development of a next generation nonvolatile memory device that can replace them is an essential research field.

Resistive RAM (ReRAM) devices have a structure in which an upper / lower electrode is disposed on a thin film and a resistance variable layer made of an oxide thin film is included between upper and lower electrodes. The memory operation is realized by using the phenomenon that the resistance state of the resistance variable layer is changed according to the voltage applied to the resistance variable layer.

On the other hand, in the case of using the Pt electrode as the inactive electrode as the upper and lower electrodes and the Ta electrode as the active electrode, there is a problem in that the on / off current ratio is small, .

Korean Patent No. 10-0738116

SUMMARY OF THE INVENTION It is an object of the present invention to provide a resistance change memory device having a high on / off current ratio and a low off current level and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a resistance-change memory device. Wherein the resistance change memory element comprises an inert electrode, a resistance-variable layer located on the inert electrode and having a state change due to the formation and disappearance of the metal filament, and an active electrode located on the resistance-variable layer, A TaN x material having an FCC structure, and X is 0.9 to 1.1.

In addition, the inert electrode may include Pt or W.

In addition, the inert electrode is a TaN y material, and Y is 1.2 to 1.4.

Also, the resistance variable layer may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

Further, the metal filament is formed and extinguished by oxidation-reduction reaction of oxygen ions in the resistance variable layer.

According to another aspect of the present invention, there is provided a resistance change memory device. Wherein the resistance variable memory element comprises an inert electrode, a resistance-variable layer located on the inert electrode, the resistance-variable layer having a state change due to the formation and disappearance of the metal filament, and an active electrode positioned on the resistance- TaN y material, and Y is 1.2 to 1.4.

Also, the resistance variable layer may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

The active electrode may include Ta, Ta alloy, Cu, Cu alloy, Ag or Ag alloy.

According to another aspect of the present invention, there is provided a method of fabricating a resistance-variable memory device. The method includes the steps of forming an inert electrode on a substrate, forming a resistance variable layer having a state change due to the formation and disappearance of a metal filament on the inert electrode, Wherein the active electrode is a TaN x material having an FCC structure and X is 0.9 to 1.1.

According to another aspect of the present invention, there is provided a method of fabricating a resistance-variable memory device. The method includes the steps of forming an inert electrode on a substrate, forming a resistance variable layer having a state change due to the formation and disappearance of a metal filament on the inert electrode, Wherein the inert electrode is a TaN y material and Y is 1.2 to 1.4.

Also, the resistance variable layer may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

According to the present invention, by using an FCC structure of tantalum nitride instead of the active electrode material used in a conventional bipolar resistive switching memory as an active electrode material, an on / off current ratio A greatly improved effect can be obtained.

In addition, tantalum nitride can be used as an inert electrode material by adjusting the nitrogen content. Therefore, instead of the conventional Pt, tantalum nitride can be utilized as an inert electrode.

The technical effects of the present invention are not limited to those mentioned above, and other technical effects not mentioned can be clearly understood by those skilled in the art from the following description.

1 is a cross-sectional view illustrating a resistance change memory device according to an embodiment of the present invention.
2 is a cross-sectional view illustrating a resistance change memory device according to an embodiment of the present invention.
3 is a graph showing current-voltage characteristics of a resistance-change memory device according to Comparative Example 1. FIG.
4 is a graph showing the current-voltage characteristics of the resistance-change memory device in Production Example 1. FIG.
5 is a graph showing current-voltage characteristics of the resistance-change memory device according to Comparative Example 1. FIG.
6 is a graph showing the current-voltage characteristics of the resistance-change memory device according to Production Example 2. FIG.
7 is a graph showing the crystal structure of TaN x according to the amount of nitrogen supplied.
8 is a RBS result graph in which the composition ratio of TaN x in Production Example 1 is measured.
9 is a RBS result graph in which the composition ratio of TaN x in Production Example 2 is measured.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail. Rather, the intention is not to limit the invention to the particular forms disclosed, but rather, the invention includes all modifications, equivalents and substitutions that are consistent with the spirit of the invention as defined by the claims.

It will be appreciated that when an element such as a layer, region or substrate is referred to as being present on another element "on," it may be directly on the other element or there may be an intermediate element in between .

Although the terms first, second, etc. may be used to describe various elements, components, regions, layers and / or regions, such elements, components, regions, layers and / And should not be limited by these terms.

The term "A / B / C structure" used in the present invention means a structure in which a B layer and a C layer are sequentially stacked on an A layer.

1 is a cross-sectional view illustrating a resistance change memory device according to an embodiment of the present invention.

Referring to FIG. 1, a resistance change memory device according to an embodiment of the present invention may include a substrate (not shown), an inert electrode 100, a resistance variable layer 200, and an active electrode 300.

The substrate may be any material that can serve as a support substrate. For example, such a substrate may be a silicon substrate. On the other hand, such a substrate may be omitted in some cases. Therefore, the substrate is not shown in Fig.

The inert electrode 100 is located on the substrate. The inert electrode 100 may include an inert metal material. For example, the inert electrode 100 may comprise Pt or W. [

The inert electrode 100 may be tantalum nitride. That is, by controlling the nitrogen content of the tantalum nitride, the effect of an inert metal such as Pt can be exhibited.

For example, the tantalum nitride that can be used as the inert electrode 100 is a TaN y material, and the Y is 1.2 to 1.4. For example, an inert electrode 100 may be TaN layer 1 .3. In this case, the TaN y material is amorphous when the nitrogen content is rich (N-rich).

Therefore, when the Y of the TaN y material is 1.2 to 1.4, the effect of the inert metal can be exhibited because the oxygen reactivity is low. On the other hand, if the Y of the TaN y material exceeds 1.4, the resistance becomes too high to be used as an electrode.

The resistance-variable layer 200 is located on the inert electrode 100. The resistance-variable layer 200 may include a metal oxide. For example, the resistance variable layer 200 may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2, and ZrO 2 .

In this resistance-variable layer 200, the resistance state is changed by the formation and disappearance of the metal filament due to voltage application. For example, the metal filament may be formed and destroyed by oxidation-reduction reaction of oxygen ions in the resistance-variable layer 200.

The active electrode 300 is located on the resistance-variable layer 200. Active electrode 300 may comprise tantalum nitride having an FCC structure. For example, the active electrode 300 is a TaN x material having an FCC structure, and X may be 0.9 to 1.1. For example, the active electrode 300 may be a TaN 1 layer.

As the N content of TaN x increases, the oxygen reactivity decreases while keeping the characteristics of the metal.

Therefore, in the case of the active electrode material, it is possible to improve the on / off current ratio in the proper range of the oxygen reactivity. When the nitrogen content is adjusted from 0.9 to 1.1 in the TaN x material, the on / off current ratio Can be improved.

If the content of X in the TaN x material exceeds 1.1 and the nitrogen content is increased, the oxygen reactivity becomes too low to be used as the active electrode material.

A method of manufacturing a resistance-variable memory device according to an embodiment of the present invention will be described. Here, the description will be made with reference to the resistance change memory element of FIG.

First, an inert electrode 100 is formed on a substrate.

For example, the inert electrode 100 may comprise Pt or W. [ The inert electrode 100 may be formed by sputtering, RF sputtering, RF magnetron sputtering, Pulsed Laser Deposition (PLD), Chemical Vapor Deposition (CVD), plasma enhanced chemical vapor deposition PECVD, plasma enhanced chemical vapor deposition (ALD), atomic layer deposition (ALD), or molecular beam epitaxy (MBE). For example, the Pt-inert electrode 100 can be formed on a silicon substrate by sputtering.

In addition, the inert electrode 100 may comprise a TaN y material. Wherein Y is 1.2 to 1.4. The TaN y electrode can be formed by sputtering, RF sputtering, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

For example, it is possible to under Argon gas 20 sccm and a nitrogen gas atmosphere of 3 sccm by using a tantalum sputtering target to perform a sputtering method to form a TaN 1 .3 inert electrode 100.

That is, the TaN y material formed by controlling the flow rate ratio of the argon gas and the nitrogen gas may be controlled to be Y 1.2 to 1.4.

Next, a resistance-variable layer 200 having a state change due to formation and disappearance of metal filaments is formed on the inert electrode 100.

The resistance-variable layer 200 may include a metal oxide. For example, the resistance variable layer 200 may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

The resistance variable layer 200 may be formed by sputtering, RF sputtering, RF magnetron sputtering, pulse laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

For example, the resistance variable layer 200 composed of a Ta 2 O 5 material can be formed on the Pt-inactive electrode 100 by a sputtering method.

Then, the active electrode 300 is formed on the resistance-variable layer 200.

At this time, the active electrode 300 is a TaN x material having an FCC structure, and X is 0.9 to 1.1.

The active electrode 300 may be formed by sputtering, RF sputtering, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

For example, the TaN 1 active electrode 300 can be formed on the Ta 2 O 5 resistance variable layer 200 by sputtering using a tantalum sputtering target in an atmosphere of 20 sccm of argon gas and 1.6 sccm of nitrogen gas . That is, the composition of the TaN x material formed by controlling the supply amount of the nitrogen gas at this time can be controlled to be 0.9 to 1.1.

2 is a cross-sectional view illustrating a resistance change memory device according to an embodiment of the present invention.

Referring to FIG. 2, a resistance change memory device according to an embodiment of the present invention may include a substrate (not shown), an inert electrode 110, a resistance variable layer 210, and an active electrode 310.

The substrate may be any material that can serve as a support substrate. For example, such a substrate may be a silicon substrate. On the other hand, such a substrate may be omitted in some cases. Therefore, the substrate is not shown in Fig.

The inert electrode 110 is located on the substrate. This inert electrode 100 may comprise an inert metal material.

The inert electrode 110 may use tantalum nitride. That is, by controlling the nitrogen content of tantalum nitride, it is possible to use tantalum nitride suitable for an inert electrode material rather than an active electrode material. Therefore, the effect of an inert metal such as Pt, which has been conventionally used, can be exerted.

For example, the tantalum nitride that can be used as the inert electrode 110 is a TaN y material, and the Y is 1.2 to 1.4. For example, the inert electrode 110 may be a layer of TaN 1.3 .

In the case of tantalum nitride, as the nitrogen content increases, the oxygen reactivity is lowered while maintaining the characteristics of the metal. Therefore, when the Y is 1.2 to 1.4 in the TaN y material, the nitrogen content becomes richer than that of the TaN x material described above, and the oxygen reactivity becomes lower, so that the effect of the inert metal can be exhibited.

The resistance-variable layer 210 is positioned on the inert electrode 110. In the resistance variable layer 210, the resistance state is changed by the formation and disappearance of the metal filament due to voltage application. For example, the metal filament may be formed and destroyed by oxidation-reduction reaction of oxygen ions in the resistance-variable layer 200.

The resistance variable layer 210 may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

The active electrode 310 is located on the resistance-variable layer 210. The active electrode 310 may comprise a reactive metal material. For example, active electrode 310 may comprise Ta, Ta alloy, Cu, Cu alloy, Ag or Ag alloy.

A method of manufacturing a resistance-variable memory device according to an embodiment of the present invention will be described. Here, the description will be made with reference to the resistance change memory element of FIG.

First, an inert electrode 110 is formed on a substrate.

At this time, the inert electrode 110 may include a TaN y material. Wherein Y is 1.2 to 1.4. For example, the inert electrode 110 may be a layer of TaN 1.3 .

The TaN y electrode can be formed by sputtering, RF sputtering, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

Next, a resistance-variable layer 210 having a state change due to the formation and disappearance of metal filaments is formed on the inert electrode 110.

The resistance-variable layer 210 may include a metal oxide. For example, the resistance variable layer 210 may include any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .

The resistance variable layer 210 may be formed by sputtering, RF sputtering, RF magnetron sputtering, pulse laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

For example, the resistance variable layer 210 composed of Ta 2 O 5 can be formed on the inert electrode 110 using an RF magnetron sputtering method.

Then, an active electrode 310 is formed on the resistance-variable layer 210. At this time, the active electrode 310 may include Ta, Ta alloy, Cu, Cu alloy, Ag or Ag alloy.

The active electrode 310 may be formed by sputtering, RF sputtering, RF magnetron sputtering, pulsed laser deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition, atomic layer deposition, or molecular beam epitaxy deposition.

Comparative Example 1

Pt / Ta 2 O 5 / Ta structure was fabricated as an inert electrode / resistance variable layer / active electrode structure.

First, a Pt electrode having a thickness of 100 nm was manufactured by sputtering.

Then, a Ta 2 O 5 resistance variable layer having a thickness of 20 nm was formed on the Pt electrode layer by sputtering.

Then, a Ta electrode having a thickness of 100 nm was formed on the Ta 2 O 5 resistance variable layer by sputtering.

Production Example 1

As an inert electrode / resistance variable layer / active electrode structure according to the present invention, a Pt / Ta 2 O 5 / TaN 1 structure was prepared.

First, a Pt electrode having a thickness of 100 nm was manufactured by sputtering.

Then, a Ta 2 O 5 resistance variable layer having a thickness of 20 nm was formed on the Pt electrode layer by sputtering.

Then, a TaN 1 active electrode having a thickness of 100 nm was formed on the Ta 2 O 5 resistance variable layer by sputtering using a tantalum sputtering target in an atmosphere of 20 sccm of argon gas and 1.6 sccm of nitrogen gas. The sputtering power at this time is RF 175 W.

Production Example 2

TaN 1 .3 / Ta 2 O 5 / Ta structure was fabricated as an inert electrode / resistance variable layer / active electrode structure according to the present invention.

First, the argon gas 20 sccm and 3 sccm nitrogen gas atmosphere by using a tantalum sputtering target to perform a sputtering method to prepare a TaN 1 .3 inert electrode of 100 nm thick. The sputtering power at this time is RF 175 W.

Next, the TaN 0.3 were prepared the first electrode a sputtering Ta 2 O 5 layer resistance change of 20 nm thickness using a.

Then, a Ta active electrode having a thickness of 100 nm was formed by performing sputtering on the Ta 2 O 5 resistance variable layer.

Experimental Example 1

Current-voltage characteristics of the resistance-variable memory device according to Comparative Example 1 and Manufacturing Example 1 were analyzed.

3 is a graph showing current-voltage characteristics of a resistance-change memory device according to Comparative Example 1. FIG. 4 is a graph showing the current-voltage characteristics of the resistance-change memory device in Production Example 1. FIG.

Referring to FIG. 3 and FIG. 4, in the case of FIG. 4 using tantalum nitride (TaN 1 ) having an FCC structure as the active electrode material, the on / off current ratio is significantly improved compared to FIG. 3 using a Ta material as the active electrode material Able to know.

Experimental Example 2

Current-voltage characteristics of the resistance-variable memory device according to Comparative Examples 1 and 2 were analyzed.

5 is a graph showing current-voltage characteristics of a resistance-change memory device according to Comparative Example 1. FIG. 6 is a graph showing the current-voltage characteristics of the resistance-change memory element in Production Example 1. FIG.

5 and 6, the case of FIG. 6 using the tantalum nitride (TaN 1. 3) in an inert electrode materials, Pt materials to be understood that can exhibit the effect of the degree shown in FIG. 5 was used as the inert electrode material have.

Experimental Example 3

7 is a graph showing the crystal structure of TaN x according to the amount of nitrogen supplied.

Referring to FIG. 7, the crystal structure of the TaN X electrode produced according to the supply amount of the nitrogen gas was analyzed.

At this time, argon gas was supplied at a flow rate of 20 sccm, sputtering was performed using a tantalum sputtering target while controlling the amount of nitrogen gas supplied, and TaN x Electrode. The sputtering power at this time is RF 175W.

First, when the electrode is manufactured by performing the sputtering method using a tantalum sputtering target in an atmosphere of argon gas (20 sccm) without supplying nitrogen gas (0 sccm), it can be understood that the electrode has a bcc crystal structure. Also, it can be seen that the bcc crystal structure is obtained by supplying nitrogen gas at 0.4 sccm and 0.8 sccm.

Then, when the nitrogen gas was further supplied at a flow rate of 1.2 sccm, it was found to be an fcc crystal structure. It can be seen that the crystal structure of TaN x produced by supplying 1.6 sccm of nitrogen gas as in Production Example 1 is an fcc structure.

Then, when the nitrogen gas is further supplied at a flow rate of 2 sccm, the fcc crystal structure collapses and an amorphous structure appears. Further, when nitrogen gas is supplied at 3 sccm as in Production Example 2 (N-rich), it can be understood that the fcc structure is collapsed and becomes an amorphous structure. When the amount of nitrogen gas supplied is increased, the TaN x It can be seen that the crystal structure of the electrode is an amorphous structure.

8 is a RBS result graph in which the composition ratio of TaN x in Production Example 1 is measured.

Raw data of raw TaN x (raw data), Ta (mass fraction), and Ta (mass) were measured in the case where an electrode was manufactured by performing sputtering using a tantalum sputtering target while supplying argon gas at 20 sccm and nitrogen gas at 1.6 sccm, The composition ratio of N (atomic composition ratio) was 1: 1.0. Simulation data was measured in the same way as raw data.

9 is a RBS result graph in which the composition ratio of TaN x in Production Example 2 is measured.

Raw data of raw TaN x obtained when sputtering was performed using a tantalum sputtering target while supplying argon gas at 20 sccm and nitrogen gas at 3 sccm as in Production Example 2, The composition ratio of N (atomic composition ratio) was 1: 1.3. Simulation data was measured in the same way as raw data.

According to the present invention, by using an FCC-structured tantalum nitride instead of an active electrode material used in a conventional bipolar resistive switching memory as an active electrode material, an on / off current ratio A greatly improved effect can be obtained.

In addition, tantalum nitride can be used as an inert electrode material by adjusting the nitrogen content. Therefore, instead of the conventional Pt, tantalum nitride can be utilized as an inert electrode.

It should be noted that the embodiments of the present invention disclosed in the present specification and drawings are only illustrative of specific examples for the purpose of understanding and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of the present invention are possible in addition to the embodiments disclosed herein.

100: inert electrode 200: resistance variable layer
300: active electrode

Claims (11)

Inert electrode;
A resistance-variable layer disposed on the inert electrode and having a state change due to the formation and disappearance of the metal filament; And
And an active electrode located on the resistance-variable layer,
Wherein the active electrode is a TaN x material having an FCC structure and X is 0.9 to 1.1. The method according to claim 1,
Wherein the inert electrode comprises Pt or W. The method according to claim 1,
Wherein the inactive electrode is a TaN y material and the Y is 1.2 to 1.4. The method according to claim 1,
Wherein the resistance variable layer comprises any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x . The method according to claim 1,
Wherein the metal filament is formed and destroyed by oxidation-reduction reaction of oxygen ions in the resistance variable layer. delete delete delete Forming an inert electrode on the substrate;
Forming a resistance variable layer having a state change due to the formation and disappearance of a metal filament on the inert electrode; And
And forming an active electrode on the resistance-variable layer,
Wherein the active electrode is a TaN x material having an FCC structure, and X is 0.9 to 1.1. 10. The method of claim 9,
Wherein the inactive electrode is a TaN y material and the Y is 1.2 to 1.4. 10. The method of claim 9,
Wherein the resistance variable layer comprises any one selected from the group consisting of Ta 2 O 5 , SiO 2 , WO 3 , TiO 2 , ZrO 2, and GdO x .
KR1020150126064A 2015-09-07 2015-09-07 Resistance Random Access Memory Device and Method of manufacturing the same KR101742384B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020150126064A KR101742384B1 (en) 2015-09-07 2015-09-07 Resistance Random Access Memory Device and Method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020150126064A KR101742384B1 (en) 2015-09-07 2015-09-07 Resistance Random Access Memory Device and Method of manufacturing the same

Publications (2)

Publication Number Publication Date
KR20170029674A KR20170029674A (en) 2017-03-16
KR101742384B1 true KR101742384B1 (en) 2017-06-02

Family

ID=58497918

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020150126064A KR101742384B1 (en) 2015-09-07 2015-09-07 Resistance Random Access Memory Device and Method of manufacturing the same

Country Status (1)

Country Link
KR (1) KR101742384B1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11158701B2 (en) 2019-11-15 2021-10-26 Gwangju Institute Of Science And Technology Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof
US11264448B2 (en) 2019-11-12 2022-03-01 Unist (Ulsan National Institute Of Science And Technology) Dielectric thin film and memcapacitor including the same
KR20230080726A (en) 2021-11-30 2023-06-07 광주과학기술원 Memcapacitor having multi-capacitance memory characteristics and method for manufacturing the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102602935B1 (en) * 2021-08-13 2023-11-15 한양대학교 산학협력단 ReRAM of having Carbon Oxynitride and Method of manufacturing the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101521383B1 (en) * 2014-03-12 2015-05-19 한양대학교 산학협력단 Nonvolatile Resistance Switching Memory Device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100738116B1 (en) 2006-07-06 2007-07-12 삼성전자주식회사 Non-volatile memory device comprising variable resistance material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101521383B1 (en) * 2014-03-12 2015-05-19 한양대학교 산학협력단 Nonvolatile Resistance Switching Memory Device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11264448B2 (en) 2019-11-12 2022-03-01 Unist (Ulsan National Institute Of Science And Technology) Dielectric thin film and memcapacitor including the same
US11158701B2 (en) 2019-11-15 2021-10-26 Gwangju Institute Of Science And Technology Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof
US11935915B2 (en) 2019-11-15 2024-03-19 Gwangji Institute of Science and Technology Dielectric thin film, memcapacitor including the same, cell array including the same, and manufacturing method thereof
KR20230080726A (en) 2021-11-30 2023-06-07 광주과학기술원 Memcapacitor having multi-capacitance memory characteristics and method for manufacturing the same

Also Published As

Publication number Publication date
KR20170029674A (en) 2017-03-16

Similar Documents

Publication Publication Date Title
US9105842B2 (en) Method for manufacturing a carbon-based memory element and memory element
CN101771131B (en) Method for fabricating resistive memory device
US9331276B2 (en) Nonvolatile resistive memory element with an oxygen-gettering layer
JP7020690B2 (en) Memristor element and its manufacturing method
KR101742384B1 (en) Resistance Random Access Memory Device and Method of manufacturing the same
US9525133B2 (en) Resistive random access memory with high uniformity and low power consumption and method for fabricating the same
JP2008022007A (en) Non-volatile memory element containing variable resistance substance, and its manufacturing method
CN107068860B (en) Resistance-variable storing device and preparation method thereof
KR101521383B1 (en) Nonvolatile Resistance Switching Memory Device
US20220406845A1 (en) Rram process integration scheme and cell structure with reduced masking operations
US20090302301A1 (en) Resistance ram device having a carbon nano-tube and method for manufacturing the same
JP5650855B2 (en) Nonvolatile memory element manufacturing method, nonvolatile memory element, and nonvolatile memory device
KR101764983B1 (en) Method of manufacturing Resistance Random Access Memory Device and Resistance Random Access Memory Device manufactured by the same
JP5422534B2 (en) Nonvolatile resistance change element and method of manufacturing nonvolatile resistance change element
KR101152437B1 (en) ReRAM of having Buffer Layer and Method of fabricating the same
KR101570620B1 (en) Resistance Random Access Memory Device and Method of manufacturing the same
US11245074B2 (en) Resistance random access memory and method for fabricating the same
KR101807915B1 (en) Resistance Random Access Memory Device and Method of manufacturing the same
US11925129B2 (en) Multi-layer selector device and method of fabricating the same
KR102432688B1 (en) multi-layered selector device and method of manufacturing the same
TW201633309A (en) Memory elements having conductive cap layers and methods therefor
KR101310855B1 (en) Nonvolatile resistive-switching random access memory device and method for fabricating the same
CN105448948A (en) Resistance-type random access memory
KR20140047946A (en) Manufacturing method of resistance switching random access memory using reduction reaction

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant