KR101735348B1 - Linearly arrayed source with host material source and dopant source - Google Patents

Linearly arrayed source with host material source and dopant source Download PDF

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Publication number
KR101735348B1
KR101735348B1 KR1020150149103A KR20150149103A KR101735348B1 KR 101735348 B1 KR101735348 B1 KR 101735348B1 KR 1020150149103 A KR1020150149103 A KR 1020150149103A KR 20150149103 A KR20150149103 A KR 20150149103A KR 101735348 B1 KR101735348 B1 KR 101735348B1
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South Korea
Prior art keywords
evaporation source
source
evaporation
nozzles
central
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KR1020150149103A
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Korean (ko)
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KR20170049649A (en
Inventor
김성문
지대준
서현
정은상
나영혁
이정규
박은식
조규중
홍예원
이광민
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주식회사 야스
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H01L21/203—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

It is an object of the present invention to provide an evaporation source structure having a novel layout capable of improving homogeneity and uniformity of a thin film formed on a large area substrate when a thin film is formed by injecting a host material and a dopant material into different evaporation sources .
According to the above object, according to the present invention, a central evaporation source containing a dopant material is disposed at the center, and evaporation sources containing a host material are disposed symmetrically with respect to an increasing source, wherein a central evaporation source and a first evaporation source ) And a second evaporation source (right), a third evaporation source adjacent to the left side of the first evaporation source, and a fourth evaporation source adjacent to the right side of the second evaporation source are generally linear.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to an evaporation source in which a host material evaporation source and a dopant evaporation source are linearly arranged,

The present invention relates to an evaporation source configuration, and more particularly, to an evaporation source configuration capable of simultaneously evaporating a host material and a dopant.

When a thin film device is formed by depositing a material on a substrate, a thin film may be formed of a single material, but a dopant may be added to the host material. When a thin film is formed by depositing a host material and a dopant material as an evaporation source, a homogeneous and homogeneous mixing of the host material and the dopant material is required throughout the thin film. In many cases, the host material may be one or more and the dopant may be one or more. In this case, the evaporation material is sprayed toward one substrate by depositing each material in each evaporation source to form a thin film. Since evaporation materials from several evaporation sources must be homogeneously deposited on the entire thin film, how to arrange each evaporation source is important. In the past, the layout of the evaporation source was mostly composed of all types. In other words, it was common to place the host material in two linear evaporation sources, add the dopants to the two increasing sources, arrange the linear evaporation sources side-by-side in parallel, and place the gradual source at both ends. In the case where there are two host materials (so-called 2H1D), a group type layout as described above is constructed (refer to Korean Patent Application No. 10-2015-0085571).

Such a conventional all-type layout has a problem in that the homogeneity is somewhat lowered in the center portion since the dopant is injected from both ends to the host.

In addition, the evaporation source configuration of the group type layout has a limitation in lengthening the entire length of the evaporation source group, and when applied to a large-area substrate, it is difficult to maintain uniformity as well as thin film uniformity.

Accordingly, an object of the present invention is to provide an evaporation source structure having a novel layout capable of improving homogeneity and uniformity of a thin film formed on a large-area substrate when a thin film is formed by injecting a host material and a dopant material into different evaporation sources I would like to.

According to the above object, according to the present invention, a central evaporation source containing a dopant material is disposed at the center, evaporation sources containing a host material are arranged symmetrically with respect to a central evaporation source, and a central evaporation source and a first evaporation source ) And a second evaporation source (right), a third evaporation source adjacent to the left side of the first evaporation source, and a fourth evaporation source adjacent to the right side of the second evaporation source are linearly formed as a whole.

Particularly, the present invention provides, in the above,

The nozzle of the central evaporation source includes a conical nozzle that is inclined to the left and inclined to the right or is radially evaporated,

The nozzles of the first evaporation source are arranged to be tilted to the left and the nozzles of the second evaporation source arranged to the right are inclined to the right and the slope of the nozzles of the first evaporation source and the second evaporation source in the slope of the nozzle to the vertical is They are symmetrical to each other,

The nozzles of the third evaporation source are arranged to be tilted to the left and the nozzles of the fourth evaporation source disposed to the right are inclined to the right and the inclination of the nozzle of the third evaporation source and the nozzle of the fourth evaporation source, Are symmetrical to each other.

Further, in the present invention, in the case where the nozzle of the central evaporation source includes the inclination to the left and the inclination to the right, the inclination of the nozzle with respect to the vertical direction is smaller than the inclination of the nozzle of the first evaporation source and the second evaporation source Less steeper, more laid-back,

The slope of the nozzles of the first evaporation source and the second evaporation source is less steep and is in a lying state than the slope of the nozzles of the third evaporation source and the fourth evaporation source.

Further, in the present invention, the first evaporation source, the second evaporation source, the third evaporation source, and the fourth evaporation source may include both a slope nozzle to the left and a nozzle having a slope to the right.

According to the present invention, the host material contained in the evaporation source and the dopant material contained in the center central evaporation source exhibit a layout like a linear evaporation source as a whole, and a thin film having excellent uniformity and homogeneity with respect to a large area substrate can be formed.

Particularly, the present invention controls the distribution of the evaporated water of the dopant and the host material by controlling the tilt and distribution of the nozzles disposed in the respective evaporation sources constituting the layout, while showing a linear layout deviating from the conventional all- .

According to the present invention, the host material can be made of two materials, and the host material can be used for the first evaporation source, the second evaporation source, the third evaporation source, and the fourth evaporation source, 2 material, the second material may be filled, or the first material, the second material, the second material, and the first material may be filled. This is because the distribution of the material can be made uniform with respect to the substrate area to be deposited by controlling the inclination of the nozzle even if the arrangement of the host material is not necessarily symmetrical.

According to the present invention, it is possible to obtain a homogeneous and uniform thin film on a large area substrate while reducing waste of material.

1 is a perspective view showing a configuration of a group of evaporation sources of a linear layout in which evaporation sources are disposed on both sides with a central evaporation source as a center.
Fig. 2 is a front view or a front sectional view of Fig. 1;
FIG. 3 is a perspective view illustrating the central evaporation source for the dopant at the center in the evaporation source group configuration of FIG. 1 replaced by a conical CNS evaporation source.
Fig. 4 is a perspective view showing a modified embodiment of Fig. 1. Fig.
Fig. 5 is a front view or a front sectional view of Fig. 4;
FIG. 6 is a perspective view illustrating a method of expanding the evaporation source group of the linear layout according to the present invention by extending the width, not the length, of the evaporation source.
FIG. 7 is a graph showing the evaporation distribution of the former group evaporation source group and the evaporation source group of the linear layout according to the present invention, and a planar arrangement view of the group evaporation source group.
FIG. 8 is a plan view showing three materials A, B and C arranged in each evaporation source of the evaporation source group in the linear layout of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a perspective view showing an embodiment of the present invention. The evaporation source group having a linear layout is composed of a central evaporation source 100 containing a dopant and evaporation sources 200, 300, 400 and 500 for containing a host material on both sides thereof. The central evaporation source may be an incremental source, and the remaining evaporation sources 200, 300, 400, and 500 may be linear evaporation sources. The first evaporation source 200 and the second evaporation source 300 adjacent to the center evaporation source and the third evaporation source 300 adjacent to the center evaporation source and the third evaporation source 300 adjacent to the left side of the first evaporation source 200 are disposed symmetrically with respect to the central evaporation source, The evaporation source 400 and the fourth evaporation source 500 adjacent to the right side of the second evaporation source 300 become an evaporation source group showing a generally linear layout. The evaporation source group exhibiting the same layout as the linear evaporation source can form a thin film having excellent uniformity and homogeneity with respect to a large area substrate, and it is possible to use various operating systems of the evaporation system applying the linear evaporation source Etc.) can be applied as it is.

The possibility that the mixing of the dopant and the host material may not be homogeneous in the case of the evaporation source of the linear layout compared with the evaporation source group of the existing group type layout can be solved by designing the nozzle.

That is, the nozzle of the central evaporation source 100 includes a left-side inclined 120 and a right-side inclined 130, or a conical nozzle 150 radially evaporated as shown in FIG. At this time, the slopes of the nozzles 120 and 130 are tilted with respect to the vertical plane so that the dopant contained in the central evaporation source 100 can reach the substrate end. That is, it forms a low angle with respect to the horizontal plane and a large angle with respect to the vertical plane.

The nozzles 220 of the first evaporation source 200 are arranged to be tilted to the left and the nozzles 320 of the second evaporation source 300 disposed to the right are arranged to be inclined to the right, The slope of the nozzle 220 of the first evaporation source 200 and the slope of the nozzle 320 of the second evaporation source 300 are the same but symmetrically formed on the left and right. At this time, the inclination of the nozzle 220 of the first evaporation source 200 and the nozzle 320 of the second evaporation source 300 is configured to be less inclined than the inclination of the nozzles 120 and 130 of the central evaporation source. The reason for such a nozzle configuration is that the positions of the first evaporation source 200 and the second evaporation source 300 are closer to the substrate end than the position of the central evaporation source 100.

The nozzles 420 of the third evaporation source 400 are arranged to be tilted to the left and the nozzles 520 of the fourth evaporation source 500 disposed to the right are arranged to be inclined to the right, Is less inclined with respect to the vertical plane than the slope of the nozzle (220) of the third evaporation source and the nozzle (320) of the fourth evaporation source. That is, they are arranged closer to the vertical plane.

That is, the evaporation source group having a linear layout is configured such that the nozzle of the evaporation source located at the center is most inclined from the vertical plane, and less inclined from the vertical plane toward the end.

The slopes of the nozzles 220 of the third evaporation source and the nozzles 320 of the fourth evaporation source are configured to symmetrically symmetrically with respect to each other.

When the dopant material A and the host materials B and C are used, the configuration of such a nozzle is not affected by the symmetric / asymmetric arrangement of host materials such as C / B / A / C / B or B / C / A / C / The material distribution over the entire substrate can be made homogeneous. Particularly, asymmetrically, the arrangement of the asymmetric host material is such that the nozzle C on the left end is close to the vertical, while the nozzle C on the right side is inclined to the right so that C does not extend from the left end to the right end. The material C can be sufficiently supplied to the right end to be homogeneous.

In the present invention, the first evaporation source 200, the second evaporation source 300, the third evaporation source 400, and the fourth evaporation source 500 each have a tilted nozzle rising to the left, (Refer to FIG. 4). The nozzle installed in each of the evaporation sources is formed symmetrically with a left-right inclination, and the nozzle of the evaporation source located at the center is most inclined from the vertical plane and less inclined from the vertical plane toward the end.

FIG. 7 shows that the evaporation source material distribution of the linear layout of the present invention and the material distribution of the evaporation material of the former group evaporation source group are arranged with a constant width so that each of the three evaporation sources forms a Gaussian distribution with intervals , Whereas the evaporation source group of the linear layout according to the present invention forms one Gaussian distribution which is the same as the linear evaporation source. Thus, the evaporation by the evaporation source group of the linear layout of the present invention is more homogeneous.

FIG. 8 shows that three types of materials A, B and C are arranged in the evaporation source group of the linear layout of the present invention. In this arrangement, A may be a dopant, and B and C may all be host materials.

According to the present invention, it is possible to obtain a homogeneous and uniform thin film on a large area substrate while reducing waste of material.

It is to be understood that the invention is not limited to the disclosed embodiment, but is capable of many modifications and variations within the scope of the appended claims. It is self-evident.

100: central evaporation source
120, 130, 150, 220, 320, 420, 520: nozzle
200: First evaporation source
300: second evaporation source
400: Third evaporation source
500: Fourth evaporation source

Claims (4)

A centrally located central evaporation source containing the substance;
A first evaporation source disposed on the left side of the central evaporation source for containing a substance;
A second evaporation source disposed on the right side of the central evaporation source for containing a substance;
A third evaporation source disposed on the left side of the first evaporation source for containing the substance;
And a fourth evaporation source disposed on the right side of the second evaporation source for containing the substance,
The central nozzles of the central evaporation source include both inclined to the left and inclined to the right,
The nozzles of the first evaporation source are arranged to be inclined to the left,
The nozzles of the second evaporation source are arranged to be inclined to the right,
The nozzles of the third evaporation source are arranged to be inclined to the left,
The nozzles of the fourth evaporation source are arranged to be inclined to the right,
The inclination of the nozzles of the first evaporation source and the second evaporation source with respect to the vertical plane is less steep than the inclination of the nozzles of the third evaporation source and the fourth evaporation source,
Wherein the central evaporation source contains a first material A, and the first evaporation source, the second evaporation source, the third evaporation source, and the fourth evaporation source contain a second material B and a third material C, respectively, / B / A / C / B or B / C / A / C / B. A centrally located central evaporation source containing the substance;
A first evaporation source disposed on the left side of the central evaporation source for containing a substance;
A second evaporation source disposed on the right side of the central evaporation source for containing a substance;
A third evaporation source disposed on the left side of the first evaporation source for containing the substance;
And a fourth evaporation source disposed on the right side of the second evaporation source for containing the substance,
The centrally located central evaporation source is a conical nozzle,
The nozzles of the first evaporation source are arranged to be inclined to the left,
The nozzles of the second evaporation source are arranged to be inclined to the right,
The nozzles of the third evaporation source are arranged to be inclined to the left,
The nozzles of the fourth evaporation source are arranged to be inclined to the right,
The inclination of the nozzles of the first evaporation source and the second evaporation source with respect to the vertical plane is less steep than the inclination of the nozzles of the third evaporation source and the fourth evaporation source,
Wherein the central evaporation source contains a first material A, and the first evaporation source, the second evaporation source, the third evaporation source, and the fourth evaporation source contain a second material B and a third material C, respectively, / B / A / C / B or B / C / A / C / B. The evaporation source group according to claim 1 or 2, wherein the first evaporation source, the second evaporation source, the third evaporation source and the fourth evaporation source each include a nozzle tilted to the left side and a nozzle tilted to the right side. The evaporation source group according to claim 1 or 2, wherein the substance A is a dopant substance and the substances B and C are a host substance.


KR1020150149103A 2015-10-27 2015-10-27 Linearly arrayed source with host material source and dopant source KR101735348B1 (en)

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