KR101733751B1 - Bio-sensor and manufacturing Method thereof - Google Patents

Bio-sensor and manufacturing Method thereof Download PDF

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KR101733751B1
KR101733751B1 KR1020150149554A KR20150149554A KR101733751B1 KR 101733751 B1 KR101733751 B1 KR 101733751B1 KR 1020150149554 A KR1020150149554 A KR 1020150149554A KR 20150149554 A KR20150149554 A KR 20150149554A KR 101733751 B1 KR101733751 B1 KR 101733751B1
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substrate
graphene layer
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graphene
biosensor
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KR1020150149554A
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KR20170048896A (en
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이창수
배명호
서정탁
이상욱
김학성
김용승
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한국생명공학연구원
한국표준과학연구원
재단법인 나노기반소프트일렉트로닉스연구단
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
    • C01B31/0438—
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C12—BIOCHEMISTRY; BEER; SPIRITS; WINE; VINEGAR; MICROBIOLOGY; ENZYMOLOGY; MUTATION OR GENETIC ENGINEERING
    • C12Q—MEASURING OR TESTING PROCESSES INVOLVING ENZYMES, NUCLEIC ACIDS OR MICROORGANISMS; COMPOSITIONS OR TEST PAPERS THEREFOR; PROCESSES OF PREPARING SUCH COMPOSITIONS; CONDITION-RESPONSIVE CONTROL IN MICROBIOLOGICAL OR ENZYMOLOGICAL PROCESSES
    • C12Q1/00—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions
    • C12Q1/68—Measuring or testing processes involving enzymes, nucleic acids or microorganisms; Compositions therefor; Processes of preparing such compositions involving nucleic acids
    • C12Q1/6876—Nucleic acid products used in the analysis of nucleic acids, e.g. primers or probes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01G—WEIGHING
    • G01G3/00—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances
    • G01G3/12—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing
    • G01G3/16—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing measuring variations of frequency of oscillations of the body
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/53—Immunoassay; Biospecific binding assay; Materials therefor
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B2204/00—Structure or properties of graphene
    • C01B2204/02—Single layer graphene

Abstract

The present invention provides a biosensor and a method of manufacturing the same. The biosensor of the present invention includes a graphene layer including a patterned convex portion on an insulating substrate so that the probe material bonded on the graphene layer is bonded to the target material through a resonance portion including a hollow structure inside the structure There is provided a biosensor capable of efficiently detecting a target substance by detecting fluctuating weight change and performing a separate labeling process, and a method of manufacturing the same.

Description

TECHNICAL FIELD The present invention relates to a bio-sensor and a manufacturing method thereof,

The present invention relates to a biosensor and a manufacturing method thereof.

In the trend of diversification of chemical and biotechnological risk factors, determining the presence of a bio-molecule or the occurrence of a specific antigen-antibody reaction, which is becoming more and more interesting subject, Has been developed as an essential technology.

To this end, various kinds of biosensors are being developed today, and the sensors thus developed have advantages and disadvantages. Among them, various types of biosensors have been known which detect or analyze a target probe substance when a target substance immobilized on a substrate and its substrate is immobilized and a target probe substance specifically binding thereto is bound thereto.

Conventional biosensors have been developed with an emphasis on sensitivity improvement through electrode surface treatment. However, when the surface treatment of the biosensor is carried out, fluorescent marking or the like is formed through labeling treatment on the target substance, and there is a tendency that high sensitivity and low concentration detection and reproducibility are lacking.

Various studies have been carried out to modify the surface of the substrate to which the target substance is bonded or to change the structure of the surface layer itself, which realizes the biosensor, and development of a biosensor using the same is desired.

In order to solve the above-described problems, the present invention provides a method of manufacturing a semiconductor device, which includes using a substrate member to which a probe material is bonded as a graphene layer, and patterning the structure of the graphene layer on the substrate surface as a convex portion to include a hollow structure, And to provide a biosensor not required.

Another object of the present invention is to provide a method of manufacturing the biosensor.

According to an aspect of the present invention, there is provided a semiconductor device comprising: a support including an insulating substrate; a resonator including a functional group on a surface exposed on the outside, the pattern including a patterned convex portion; And a measurement unit disposed between the support unit and the resonance unit so as to measure a change in weight of the detection unit.

According to another aspect of the present invention, there is provided a method for fabricating a semiconductor device, comprising: forming a patterned convex pattern on a surface of a substrate; forming a convex pattern on the patterned convex pattern by using a hydrocarbon gas as a carbon source, Directly on the substrate to obtain a graphene layer including convex portions patterned in opposite phases on the pattern of the substrate, separating the graphene layer from the substrate, separating the separated graphene layer into a support portion including an insulating substrate Forming a hollow structure between the support portion and the graphene layer, treating the surface of the graphene layer with a surface treatment agent containing a functional group on the surface exposed to the outside of the graphene layer to form a resonance portion, And combining the detection part on the resonance part included in the biosensor.

The biosensor according to the present invention includes a certain type of hollow structure formed from a graphene layer including convex portions on a substrate so that the probe material is bonded on the surface of the graphene layer and the probe material The analysis can be performed more efficiently by using the fluctuation of the resonance vibration of the hollow structure formed on the substrate according to the increase in weight upon binding to the target material.

1 is a schematic diagram of a biosensor according to an embodiment of the present invention.
2 is a schematic diagram of a biosensor according to an embodiment of the present invention combined with a target material.
FIG. 3 is a schematic diagram showing a change in resonance part when a target substance is bound to a biosensor according to an embodiment of the present invention.
4 is a view of a PECVD apparatus for manufacturing the biosensor of the present invention.
5 is an AFM photograph of a graphene layer formed with a resonance portion according to an embodiment of the present invention.
FIG. 6 is a graph showing a result of measuring transmittance of a graphene layer according to an embodiment of the present invention using graphene grown on the quartz substrate by the same process.
FIG. 7 is a graph showing Raman spectroscopy using a sample prepared by directly growing a graphene layer on a SiO 2 substrate according to an embodiment of the present invention. FIG.

Hereinafter, preferred embodiments of a biosensor and a method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely. Therefore, the shapes and the like of the elements in the drawings are exaggerated in order to emphasize a clearer description, and elements denoted by the same symbols in the drawings denote the same elements. Also, where a layer is described as being "on" another layer or substrate, the layer may be in direct contact with the other layer or substrate, or a third layer may be interposed therebetween .

1 is a plan view of a biosensor according to an embodiment of the present invention. 1, a biosensor 100 according to the present invention includes a support 110 including an insulating substrate 111, a convex portion (not shown) disposed on the support 110 and patterned on the graphene layer 121 And a detection unit 130 disposed on the resonance unit 120 in combination with the functional group 123. The resonance unit 120 includes a functional group 123 on a surface exposed to the outside, And a measurement unit 150 disposed between the support unit and the resonance unit to measure a change in weight of the detection unit.

The supporting portion 110 may include a supporting substrate 112 and an insulating substrate 111. Examples of the usable substrate include an inorganic substrate such as an Si substrate, a glass substrate, a GaN substrate, and a silica substrate, and an inorganic substrate such as Ni, Cu, A metal substrate, or the like can be used. According to one embodiment of the present invention, for example, as the insulating substrate, for example, a SiO 2 wafer can be used as the SiO 2 substrate, and a Si wafer can be used as the supporting substrate . In the process, when the graphene layer 121 is disposed on the insulating substrate 111 to form the resonance unit 120, a SiO 2 substrate favorable in insulating property and affinity with the graphene layer is preferable.

The graphene layer 121 may be composed of a single layer graphene or a multilayer graphene, and the multilayer graphene may have a thickness of, for example, about 3 to about 300 layers.

The resonance unit 120 includes a graphene layer 121 on which a patterned convex portion 122 is formed on a support 110 that is generally a flat plate and a convex portion 121 of the graphene layer 121 122 formed from the structural features of the hollow structure.

Here, the patterned convex portions 122 of the graphene layer 121 may exist in various forms. For example, protrusions 122 (for example, protrusions) having protrusions may be repeatedly formed at regular intervals. The shape of the convex portion 122 may be formed to be relatively higher than the horizontal plane of the non-convex portion of the graphene layer 121, but may have various shapes such as a columnar shape or a hemisphere shape in a specific shape.

For example, the convex portion 122 may have a shape such that the convex portion 122 has a size of 0.1 to 100 μm, for example, The convex portions 122 having a size of 탆 (for example, the diameter of the convex portions formed when the flat surface is viewed from the top) are uniformly embossed at intervals of 0.1 탆 to 100 탆 with respect to the center point of the convex portions 122 Lt; / RTI > The height of the convex portion 122 may range from the horizontal plane of the graphene layer 121 to the top of the convex portion 122, for example, in the range of 10 nm to 10 μm.

The surface exposed to the outside of the graphene layer 121 may include a functional group 123. The functional group 123 may be formed on the surface of the graphene layer 121 through a chemical surface treatment. The functional group 123 may include -NH 2 , -COOH, -CHO-OH , And the like.

The detection unit 130 may include a probe material in combination with the functional group 123 formed on the surface of the graphene layer 121. The probe material serves as a sensor and is capable of binding with a target substance to be detected at a later time. The probe material is not limited to a specific one, but specific examples thereof include at least one selected from DNA, antigens, antibodies, and peptides .

A biosensor for detecting the presence of a biomaterial identifies the type of a substance through the combination of a target substance (that is, a substance to be detected) and a probe substance (that is, a substance that is specifically and selectively bindable with a desired substance). Such a biosensor detection method may be various, for example, an electrical or optical method.

Among these, the optical system can detect whether a target substance is bound to a desired object by means of an optical microscope or the like without a separate electric device, and thus has a relatively simple and economical advantage. However, the optical system requires a dye to induce a change in optical characteristics due to bonding between materials, and there is a problem in the process of labeling the target material or the probe material with a dye. In addition, There is a problem that the economical efficiency is relatively low because the price is high.

Accordingly, the present invention recognizes the problem of the prior art, and by forming the resonance part 120 including the hollow structure on the substrate of the biosensor as the patterned convex part 122 of the graphene layer 121, The present invention can provide a biosensor capable of detecting a target substance without further dye-labeling.

The detection process of the biosensor according to one embodiment of the present invention will be described in detail. A biosensor according to the present invention uses a probe material of a detection unit 130 coupled to a graphene layer 121 and a surface of the graphene layer 121. Here, the probe substance may be any substance capable of selectively and specifically binding with the target biomaterial according to the type of the target biomaterial to be detected. In one embodiment of the present invention, the DNA is used as the bio-material and the antigen-antibody is used in another embodiment of the present invention, but the scope of the present invention is not limited thereto.

The target substance 140 binds to the probe material, and the total weight of the probe material increases due to binding of the target material 140. In this case, as shown in FIGS. 2 to 3, A variation in the number of vibrations due to an increase in weight is caused in the hollow structure 124 of the body 120. That is, from the fluctuation of the natural frequency of the hollow structure 124 due to the weight difference, the binding between the probe material and the target material can be confirmed.

The hollow structure 124 is formed by a graphene layer 121 including a planar insulating substrate 111 and patterned convex portions 122. The hollow structure 124 includes an insulating substrate 111 and a graphene layer 121 Wherein the hollow structure (124) has a volume content of 1.0 x 10 7 nm 3 - to 1.0 x 10 11 nm 3 And, the size of the hollow structure (124) 1.0 x 10 7 nm 3 If more smaller yes if the pinned layer 121, coupling efficiency of the probe material and the target material bonded to a too low phase, can not be measured is made, the content never exceeded 1.0 x 10 11 nm 3, a hollow structure (124) The hollow space of the hollow structure 124 is too large to maintain the shape of the patterned convex portion 122 or may cause collapse of the hollow structure 124.

The measurement unit 150 disposed between the support unit 110 and the resonance unit 120 including the insulating substrate 111 may be used to measure the variation of the frequency of the hollow structure 124, Can be used.

The measurement unit 150 may be disposed on the insulating substrate in an embedded type electronic device so as to be positioned inside the hollow structure 124 in advance. A method of measuring a change in the resonance frequency according to a change in the mass of the probe material selectively adsorbed on the hollow structure can be indirectly induced by using the following formula.

f 01 = (? 01 ? N * RR ) /? (4? M)

In the above formula, f 01 denotes a resonance frequency of fundamental mode, N * RR denotes a radial membrane resultant at the membrane boundary, α 01 denotes a positive root of Bessel function J 0 , M denotes a total mass of vibrating parts, The total weight of the probe material increases due to the binding of the target material 140, and the M value increases to change the f 01 value in the above equation.

Hereinafter, the present invention will be described in more detail with reference to drawings and Experimental Examples with respect to a method of manufacturing such a biosensor and a specific experiment evaluation result.

Grapina  Fabrication of the layer

In order to manufacture a biosensor according to an embodiment of the present invention, a patterned convex shape is first formed on at least one surface of an insulating substrate, a hydrocarbon gas is used as a carbon source on the substrate having the pattern formed thereon, (PECVD), graphene is grown directly on the substrate to obtain a graphene layer including convex portions patterned in opposite phases on the pattern of the substrate.

In order to obtain a conventional patterned graphene layer, a graphitizing catalyst metal layer is laminated on a substrate and then a pattern is formed thereon, or a patterned graphitizing catalyst metal layer is laminated on a substrate. However, A graphene layer can be directly grown on a substrate subjected to a three-dimensional surface treatment from a carbon source through a chemical vapor deposition method using a plasma.

In this case, an inorganic substrate such as a Si substrate, a glass substrate, a GaN substrate, or a silica substrate, and a metal substrate such as Ni, Cu, W, or the like can be used as the substrate that can be used at this time. According to one embodiment of the present invention, For example, a SiO 2 substrate, for example a SiO 2 wafer, can be used. By using SiO 2 wafers, a graphene layer having better uniformity can be obtained than when graphene is grown directly from a carbon source on the surface using PECVD.

The depth or height of the pattern formed on the substrate can be appropriately adjusted according to the intensity of the etching process used. For example, when a developing solution is used, it can be adjusted depending on the type, concentration, immersion time, etc. of the developing solution and can be adjusted depending on the type, concentration, reaction time, etc. of the developing gas.

Thereafter, the substrate on which the pattern was formed was transferred to a PECVD chamber as shown in FIG. 4, and then heat treatment was performed while introducing gas into the chamber using a hydrocarbon gas as a carbon source on the substrate to form a graphene layer And then growing it under cooling, a graphene layer including a patterned convex portion can be formed. Specifically, hydrocarbon gas is converted into a plasma using a PECVD apparatus, and even if there is no catalyst metal (copper, nickel, ruthenium, etc.) required for growing graphene, The graphene layer can be directly formed. Thereafter, when heat treatment is performed at a predetermined temperature for 1 to 10 hours, the carbon components present in the carbon source of the hydrocarbon bond with each other to form a hexagonal plate-like structure, and a graphene layer is formed. A graphene layer having a uniform film thickness can be obtained.

During the formation of the graphene layer, the hydrocarbon gas can supply carbon and can be used without any particular limitation as long as the material can exist in a gaseous phase at a temperature of about 300 ° C or higher. The hydrocarbon gas may be a compound containing carbon, for example, a compound having 6 or less carbon atoms, or 4 or less carbon atoms, or a compound having 2 or less carbon atoms. Examples thereof include at least one selected from the group consisting of methane, ethane, propane, heptane and acetylene.

Preferably, the carbon source is introduced into the chamber at a constant pressure, for example, 1 to 100 sccm. In the chamber, only the carbon source is present, or an inert gas such as helium or argon or hydrogen (H 2 ) It is also possible to exist with the gas.

Further, oxygen may be used in addition to the vapor carbon supply. Oxygen can be used to remove organic materials that may be present on the SiO2 / Si substrate to maintain the surface of the substrate to be reacted and to induce the growth of a uniform and high quality graphene film. The flow rate is about 30 sccm 120 sccm for about 3 to 20 minutes.

After the gaseous carbon source is introduced into the chamber, it is heat-treated at a predetermined temperature and a predetermined plasma power condition to form a graphene layer on the surface of the substrate. The graphene layer growth temperature and the plasma power are important factors in the formation of graphene, and the growth temperature may be about 400 to about 1000 캜, for example, about 600 to about 800 캜, and the plasma power may be about 5 W to 100 W can be selected.

When the graphene is formed into multiple layers, for example, polycrystalline graphene can be formed. Polycrystalline graphene has a structure different from naturally occurring graphene in that each graphene layer is grown by rotating at 60 degrees with respect to the underlying layer, and in the case of graphene belonging to naturally occurring graphite, In the case of polycrystalline graphene, the size of a single crystal domain ranges from 1 nm to 1000 nm.

Next, a single or multi-layered graphene layer formed from the above process is bonded to an adhesive member, and then the substrate and the graphene layer are separated, and the separated graphene layer is disposed on a support portion including an insulating substrate, A hollow structure can be formed.

In the process of forming the hollow structure, the graphene layer grown on the substrate may be separated and transferred on a planar insulating substrate. As described above, the graphene layer formed from PECVD may be formed on an insulating film applicable to various devices, 2 film. ≪ / RTI >

In such a process, a gas is inserted between the graphene layer formed as described above and the substrate to reduce their bonding force, and then the graphene layer is separated from the substrate by bonding with the adhesive member, and then, And then removing the adhesive member.

It is possible to easily separate the graphene layer using the adhesive member with the adhesive support. At this time, the adhesive member usable may include one or more selected from the group consisting of PMMA, PDMS, PEDOT: PSS, Pentacene, Gold, and Thermal Release Tape.

Thereafter, the separated graphene layer is disposed on the supporting portion including the insulating substrate. An inorganic substrate such as a Si substrate, a glass substrate, a GaN substrate, or a silica substrate and a metal substrate such as Ni, Cu, W, or the like can be used as the insulating substrate that can be used at this time. According to one embodiment of the present invention, For example, a SiO 2 substrate, for example a SiO 2 wafer, can be used. When a graphene layer is disposed on the insulating substrate in order to form a hollow structure on the insulating substrate, a SiO 2 substrate favorable in terms of insulating property and affinity with the graphene layer is preferable, and as the supporting substrate, a Si substrate is preferable .

Since the graphene layer is separated from the adhesive member after the graphene layer is disposed on the insulating substrate, the graphene layer may be broken or the shape may be changed due to the bonding property between the adhesive member and the graphene layer. Thus, the adhesive member can be removed with a solvent such as acetone without damaging the graphene layer, and the graphene layer can be easily left on the insulating substrate.

A measurement unit may be previously arranged on the insulating substrate. Specifically, the measurement unit 150 may be disposed on the insulating substrate in an embedded type electronic device so as to be positioned inside the hollow structure 124 in advance. The measurement unit 150 measures the amount of probe material selectively adsorbed on the hollow structure This method can be indirectly derived by using the following formula as a method of measuring the change of the resonance frequency with the change of the mass.

f 01 = (? 01 ? N * RR ) /? (4? M)

(f 01 : resonance frequency of fundamental mode, N * RR : radial membrane resultant at the membrane boundary, α 01 : positive root of Bessel function J 0 , M: total mass of vibrating parts)

Thereafter, the surface of the graphene layer exposed to the outside may be treated with a surface treatment agent containing a functional group to form a resonance portion, and the detection portion may be coupled onto the resonance portion including the functional group.

The surface treatment refers to a process of introducing a functional group for facilitating binding of a probe material to a graphene layer as a detection portion. Specifically, the graphene layer is coated with one kind selected from the group consisting of -NH2, -COOH, and -CHO-OH A chemical treatment may be performed so that the functional group is bonded to the probe material.

The chemical treatment may be performed by a method of dipping the sample on a solution containing the spin coater or the beaker. According to an embodiment of the present invention, the graphene layer To a piranha solution (a solution of sulfuric acid and 30% - hydrogen peroxide in a ratio of 3: 1) for 15 minutes.

After the surface chemical treatment is performed on the graphene layer to form a functional group, the probe material can be bonded as a detection portion. Specifically, the detection unit may include a probe material in combination with a functional group formed on a surface of the graphene layer. The probe material serves as a sensor and is capable of binding with a target substance to be detected at a later time. The probe material is not limited to a specific one, but specific examples thereof include at least one selected from DNA, antigens, antibodies, and peptides .

Hereinafter, embodiments of the present invention will be described in detail with reference to examples, but the present invention is not limited thereto.

Example

A wafer in which Si (300 nm or less) / SiO 2 (300 nm) were sequentially laminated was used as a substrate, and patterning was performed according to the following etching process.

The Si (300 nm or less) / Si0 2 (300 nm) substrate was dipped in isopropyl alcohol and ultrasonically sonicated for 10 minutes. Thereafter, in order to remove organic contaminants or native oxide existing on the substrate, the substrate was dipped in acetone, and ultrasonication was further performed for about 10 minutes.

Thereafter, a photoresist was spin-coated on the entire surface of the substrate using a photomask (Soda Lime / Chrome mask, LMTEC), and a pattern having a regularly arranged circle having a diameter of about 2 to 7 μm was formed. Patterned protrusions were formed so that cylinders having a height of 70 to 250 nm were regularly arranged using the generated pattern as an etching barrier.

Using a plasma-enhanced chemical vapor deposition (PECVD, A-Tech System) chamber on the patterned substrate, CH 4 gas was supplied at a pressure of about 10 -2 Torr and a temperature of about 500 ° C for about 1 hour A graphene layer was obtained. During the gas injection, the gas flow rate of CH 4 was changed in a range of 1 to 100 sccm, the H 2 gas flow rate was fixed at about 20 sccm, and the RF power was fixed to a value between 1-100 W. The transmittance of the graphene layer obtained through the PECVD deposition was measured on a separate quartz substrate using graphene grown by the same procedure as above, and the result is shown in FIG. After the growth of graphene, the overall transmittance decreased by about half, and it was confirmed that graphene-specific exciton absorption occurs at the wavelength range of 200 to 300 nm.

FIG. 7 shows Raman spectroscopy measurement using a sample prepared by directly growing a graphene layer on a SiO 2 substrate according to Example 1 of the present invention under the same conditions. The horizontal axis represents the magnitude of the Raman shift and the vertical axis represents the intensity in Arbitrary Units. After growing graphene on an insulating substrate, it was confirmed that a D band near 1350 cm -1 , a G band near 1580 cm -1 , and a 2D band near 2700 cm -1 were generated.

Next, to separate the graphene layer including the patterned protrusions on the substrate (SiO 2 ), a layer of PMMA (Polymethylmethacrylate) dissolved in a solvent of Chloro-Benzene (Sigma Aldrich) (Sigma Aldrich) solution (concentration is about 20 to 120 mg / mL), etching the substrate SiO 2 to separate the graphene layer from the wafer, and then removing the graphene layer from the wafer using an insulating substrate (SiO 2 ) And a hollow structure is formed by a graphene layer having convex portions patterned with the insulating substrate. Thereafter, the adhesive member is removed using acetone.

Thereafter, a surface treatment is performed to introduce a detection portion containing a functional group onto the graphene layer including the patterned convex portion. When a graphene layer is oxidized in a strong acid (a mixture of sulfuric acid and nitric acid) so as to have -COOH at the end and then streptavidin is introduced, a biosensor in which streptavidin is coupled as a detection part to the graphene layer . A biosensor could be constructed by reacting avidin, which strongly binds to streptavidin.

5 shows an AFM photograph of a graphene layer transferred to SiO 2 as an insulating substrate. It can be confirmed that a hollow structure is formed inside the convex portion of the graphene layer and the flat surface of the insulating substrate since the patterned convex portion is formed in the graphene layer.

The biosensor (100)
The support 110,
The insulating substrate 111,
The support substrate 112,
The resonance unit 120,
In the graphene layer 121,
The convex portion 122,
Functional Group (123)
The hollow structure (124)
The detection unit 130 detects,
The target material (140)
The measuring unit 150 measures,

Claims (15)

delete delete delete delete delete delete delete delete delete delete Forming a patterned convex shape on one side of the substrate;
The graphene is directly grown on the substrate by plasma chemical vapor deposition (PECVD) using a hydrocarbon gas as a carbon source on the substrate on which the pattern is formed, and convex portions patterned in a reversed phase are included in the pattern of the substrate To obtain a graphene layer;
Separating the substrate and the graphene layer, and disposing the separated graphene layer in a support including an insulating substrate to form a hollow structure between the support and the graphene layer;
Treating the surface of the graphene layer with a surface treatment agent containing a functional group on a surface exposed to the outside of the graphene layer to form a resonance portion; And
And bonding the detection unit on the resonance unit including the functional group. The method of claim 11,
Wherein the hydrocarbon gas comprises at least one selected from the group consisting of methane, ethane, propane, heptane, and acetylene. The method of claim 11,
Wherein the plasma chemical vapor deposition (PECVD) is a process of directly growing graphene on a substrate under a temperature condition of 1 占10-4 Torr to 1 占10-2 Torr and a temperature of 400 占 폚 to 1000 占 폚. The method of claim 11,
Wherein a bonding member is used to separate the substrate and the graphene layer, and the bonding member includes at least one selected from the group consisting of PMMA, PDMS, PEDOT: PSS, Pentacene, Gold, and Thermal Release Tape Gt; The method of claim 11,
Wherein the measurement portion is disposed in an embedded form on the insulating substrate.
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JP2007147420A (en) * 2005-11-28 2007-06-14 Fujifilm Corp Biosensor
JP2013163609A (en) 2012-02-10 2013-08-22 Nagoya Institute Of Technology Method for producing graphene-like material

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Publication number Priority date Publication date Assignee Title
JP2007147420A (en) * 2005-11-28 2007-06-14 Fujifilm Corp Biosensor
JP2013163609A (en) 2012-02-10 2013-08-22 Nagoya Institute Of Technology Method for producing graphene-like material

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