KR101733350B1 - Quantum Optical Device and its manufacturing method - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a quantum optical device and a method of manufacturing the same. An n-type gallium nitride semiconductor layer formed on the substrate; And a nanostructure layer formed on at least a part of the n-type gallium nitride semiconductor layer, wherein the nanostructure layer comprises: a nanostructure; And a metal layer covering at least a part of the nano structure and the n-type gallium nitride semiconductor, wherein the nanostructure is a nanostructure having a top in the shape of a cone or polygonal horn, and at least a part of the top of the active layer And a method of manufacturing the same. The quantum optical device has a high quantum structure light extraction efficiency and can easily combine the quantum structure and the nanocavity, thereby improving the production efficiency of the quantum optical device.

Description

[0001] The present invention relates to a quantum optical device and a manufacturing method thereof,

The present invention relates to a quantum optical device and a method of manufacturing the same.

The quantum dot is a nano-sized crystal structure, and the bandgap of the quantum dot exhibits a quantum confinement effect that restricts the movement of both electrons and holes, which are two carriers in the semiconductor, in a three-dimensional manner. Material. By controlling the electrical and chemical properties of such quantum dots, it can be applied to a semiconductor photodetector such as a single photon source (quantum source) infrared detector, a laser, a light emitting diode, a transistor and a solar cell, or a photoelectric conversion element.

In particular, a semiconductor single quantum dot called an artificial atom can exhibit high driving temperature, stability, fast photon emission, and current drivability, and therefore research is being conducted to utilize it as a single photon source based on this. For example, research into the application of nano-electronic devices such as single-electron memories and single-photon sources, and single photon emitters to nano-optical devices is actively under way. Semiconductor spontaneous formation quantum dots, colloidal quantum dots, and quantum dots embedded in nanowires have been studied as quantum optical devices, but they have limitations in terms of material and structural aspects. For example, the spontaneous formation quantum dot is difficult to be seen as a single quantum dot because the quantum dots are buried at a high density in a planar structure, the photon emission efficiency is very limited, and the position of the quantum dots is randomly grown, . Further, there is a problem in that recombination between electrons and holes becomes difficult due to the internal electric field effect due to the stress between the constituting layers, resulting in low internal quantum efficiency. In addition, the quantum dots contained in the colloidal quantum dots and the nanowires are difficult to secure a single quantum dots, or difficult to secure positioning and optical stability. In addition, in the conventional manufacturing method of a quantum optical device, most of the quantum dots are formed in the resonator because the combination of the quantum dots and the resonator depends on the coincidence, so that the process yield is low and the mass production cost is high.

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a high-efficiency quantum optical device capable of mass production of a quantum structure and a nano- Method.

However, the problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

According to one aspect of the present invention,

Board; An n-type gallium nitride semiconductor layer formed on the substrate; And

And a nano structure layer formed on at least a part of the n-type gallium nitride semiconductor layer,

The nanostructure layer may be formed,

Nanostructures; And

And a metal layer covering at least a part of the n-type gallium nitride semiconductor, wherein the nanostructure is a nanostructure having a cone or a polygonal cone-shaped top, and an active layer having a quantum structure is formed on at least a part of the top The present invention relates to a quantum optical device.

The metal layer may include at least one of aluminum, gold, silver, and platinum.

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The quantum structure may be formed as a quantum well at the top of the nanostructure and a quantum well at the top of the top.

A p-type gallium nitride semiconductor layer or a quantum barrier layer may be further formed on the active layer.

An n-type metal electrode layer formed on at least a portion of the n-type gallium nitride semiconductor layer, and a p-type metal electrode layer formed on at least a portion of the nano structure layer.

According to another aspect of the present invention,

Forming an n-type gallium nitride semiconductor layer on a substrate; And

Forming a nano structure layer on at least a portion of the n-type gallium nitride semiconductor layer; Lt; / RTI >

The step of forming the nanostructure layer comprises:

Forming a mask layer on the n-type gallium nitride semiconductor layer;

Patterning the mask layer in a hole pattern shape;

Growing a n-type gallium nitride semiconductor through holes of the hole pattern in which the n-type gallium nitride semiconductor layer is exposed to form a nanostructure;

Forming an active layer having a quantum structure on top of the nanostructure;

Removing the mask layer; And

Forming a metal layer covering at least a part of the nano structure and the n-type gallium nitride semiconductor layer after the etching; To a method of manufacturing a quantum optical device.

After the step of forming the active layer, a step of forming a p-type gallium nitride semiconductor layer or a quantum barrier layer on the active layer may be further included.

The mask layer may include at least one of Si ₃ N ₄ , SiO _{2 ,} TiO ₂ , TiN, and Ti.

Forming a n-type metal electrode layer on at least a portion of the n-type gallium nitride semiconductor layer after forming the nano structure layer; And forming a p-type metal electrode layer on at least a part of the nano structure layer.

  The quantum optical device according to the present invention provides a quantum structure capable of controlling the position, having excellent light extraction efficiency and light emitting recombination efficiency. In particular, the quantum structure can easily be coupled with the nanocavity, thereby improving the production yield. In addition, the quantum optical device can be effectively applied to quantum information technologies such as a solid quantum ejector, an on-chip quantum device, quantum computing quantum cryptography, and the like.

1 shows a quantum optical device according to an embodiment of the present invention.
3 illustrates a method of manufacturing a quantum optical device according to an embodiment of the present invention.
4 is a scanning electron microscope and a transmission electron microscope photograph according to each step in the step of forming a quantum optical device according to Example 1 of the present invention.
5 is a graphical representation of a numerical modeling of a plasmon system according to the shape of a nanostructure according to an embodiment of the present invention.
FIG. 6 shows Micro-PL (Micro-photoluminescence) spectra and optical characteristics of a quantum optical device according to an embodiment of the present invention.
FIG. 7 illustrates optical characteristics of a quantum optical device according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear. Also, terminologies used herein are terms used to properly represent preferred embodiments of the present invention, which may vary depending on the user, intent of the operator, or custom in the field to which the present invention belongs. Therefore, the definitions of these terms should be based on the contents throughout this specification. Like reference symbols in the drawings denote like elements.

The present invention provides a quantum optical device, wherein the quantum optical device provides a quantum structure having an improved light extraction efficiency and an internal electric field reduction effect, facilitates coupling with a nano-resonator, Can be increased.

FIG. 1 shows a quantum optical device according to an embodiment of the present invention, and a quantum optical device according to the present invention will be described with reference to FIG. The quantum optical device may include a substrate 11, an n-type gallium nitride semiconductor layer 20, and a nanostructure layer 30. The substrate 11 may be at least one of sapphire (Al ₂ O ₃ ), Si, SiC, GaN, and AlN, but is not limited thereto. And is preferably sapphire (Al ₂ O ₃ ).

The n-type gallium nitride semiconductor layer 20 is formed on the substrate 11 and is formed of a material such as GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, GaInNSb, and the like. And is preferably n-type GaN. The n-type gallium nitride semiconductor may further include an n-type impurity element, and the n-type impurity may be N, P, As, Ge, Si, Cu, Ag, Au, The n-type gallium nitride semiconductor layer 20 may be formed to a thickness of 1 mu m to 3 mu m, and preferably 3 mu m.

The nanostructure layer 30 includes a nanostructure 32; An active layer 33; And a metal layer 35 covering at least a part of the nano structure 32 and the n-type gallium nitride semiconductor layer 20.

The nanostructure 32 includes a top end having a conical or polygonal horn shape and a bottom end of a vertical column grown from the n-type gallium nitride semiconductor layer 20. An active layer 33 is formed on at least a part of the upper end, and the active layer 33 includes a quantum structure. That is, since a quantum structure is formed in a structure in which the apex portion is sharp like a cone or a polygonal horn, the distribution of the quantum structure becomes uniform and the position adjustment becomes easy. The quantum structure may be a single layer or a plurality of layers, and the quantum structure may be a quantum well and a quantum dot, but is not limited thereto. Preferably, quantum wells may be formed on the quantum dots and on the entire upper surface of the upper apex.

The quantum structure may be an i-type gallium nitride semiconductor, and more specifically GaN, GaNP, GaNAs, GaNSb, AlGaN, InGaN, BAlGaN, GaAlNP, GaAlNAs, InAlGaN, GaAlNSb, GaInNP, GaInNAs, GaInNSb, It does not. It is preferably an InGaN compound.

A quantum barrier layer 34 or a p-type gallium nitride semiconductor layer 34 may be further formed on the active layer 33. The p-type gallium nitride semiconductor may further include a p-type impurity element, and the p-type impurity may be at least one selected from the group consisting of Mg, B, In, Ga, Al, Tl, and the like.

The metal layer 35 covers at least a portion of the upper end of the nanostructure 32 on which the quantum structure is formed and the n-type gallium nitride semiconductor layer 20. The formation of the metal layer 35 can further improve the efficiency of the quantum structure and the productivity of the quantum optical device according to the present invention. That is, since the upper end of the nanostructure 32 has a pointed structure such as a pyramid structure, when a metal film is formed by depositing a metal film on such a structure, a surface plasmon polar The riton is strongly aggregated at the apex of the pyramid and combines with the quantum structure. Since such a surface plasmon has a broad spectrum distribution compared to a conventional resonator, it is relatively easy to match the energy of a quantum structure such as a quantum dot and the energy of a surface plasmon, for example, so that a system in which a nanocavity and a quantum dot are combined, And can be produced at a high process yield. In addition, the efficiency of the quantum structure can be improved because the surface plasmon is self-aligned to the quantum structure portion located at the apex of the nanostructure, for example, the quantum dot portion.

The metal layer 36 is a metal having a surface plasmon, and may include, for example, at least one of aluminum, gold, silver, and platinum, but is not limited thereto. The thickness of the metal layer 36 is 5 nm to 100 nm, preferably 30 nm to 50 nm.

According to an embodiment of the present invention, an n-type metal electrode layer is formed on at least a portion of the n-type gallium nitride semiconductor layer 20; And a p-type metal electrode layer may be further formed on at least a portion of the nanostructure layer 30. The nanostructure layer 30 includes a nanostructure 32; An active layer 33; And a metal layer 35 covering at least a part of the nano structure 32 and the n-type gallium nitride semiconductor layer 20, and preferably a p-type gallium nitride semiconductor layer is formed on the active layer 33 Lt; / RTI > The n-type metal electrode layer and the p-type metal electrode layer act as ohmic electrons to supply electric current to the quantum optical device 10 to enable electric driving.

The n-type metal electrode layer may include one or more of Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, ITO, Or a mixture of two or more species. The p-type metal electrode layer may be formed of one of Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, ITO, Or a mixture of two or more species.

The n-type metal electrode layer and the p-type metal electrode layer may be formed to a thickness of 30 nm to 200 nm, and preferably 150 nm to 180 nm.

The present invention provides a method of manufacturing a quantum optical device according to the present invention. The manufacturing method may include forming an n-type gallium nitride semiconductor layer and forming a nanostructure layer.

FIG. 3 illustrates a method of manufacturing a quantum optical device according to an embodiment of the present invention. Referring to FIG. 3, a method of manufacturing a quantum optical device according to the present invention will be described. 3 (a) shows a step of forming an n-type gallium nitride semiconductor layer and Figs. 3 (b) to 3 (h) show steps of forming a nano structure layer. More specifically, 3 (e) is a step of forming an active layer, and Fig. 3 (g) is a step of forming a mask layer. Fig. 3 And Fig. 3 (h) is a step of forming a metal layer. After the step of forming the active layer, a step of forming a p-type gallium nitride semiconductor layer or a quantum barrier layer may be further included, which is shown in Fig. 3 (f).

3 (a), the step of forming the n-type gallium nitride semiconductor layer may be performed by using a metal-organic chemical vapor deposition (MOCVD), a molecular beam epitaxy (MBE), or a HVPE Type gallium nitride semiconductor layer 20 is formed using a hydride vapor phase epitaxy or the like, and the process conditions are not particularly limited in the present invention. The n-type gallium nitride semiconductor is as described above.

In FIG. 3 (b), the step of forming the mask layer is a step of depositing a mask layer 31 on at least a part of the n-type gallium nitride semiconductor layer 20. The mask layer 31 has a mask function for growing the nanostructure according to the present invention. The mask layer 31 is formed to a thickness thinner than the pattern size formed in the next step, and is preferably 100 nm to 200 nm. The mask layer 31 is at least one of Si ₃ N ₄ , SiO _{2 ,} TiO ₂ , TiN, and Ti, but is not limited thereto.

3 (c), the patterning step is a step of forming a hole pattern on the mask layer 31 using photolithography, electron beam lithography, an imprint lithography method, or the like. As shown in Fig. 3 (c), the n-type gallium nitride semiconductor layer is exposed in the hole portion of the hole pattern.

3 (d), the step of forming the nanostructure is a step of forming a nanostructure 32 having a protruded top portion grown through a hole portion of the hole pattern. The nanostructure 32 may be formed of a material selected from the group consisting of n-type and n-type, for example, MOCVD (Metal Organic Chemical Vapor Deposition), MBE (Molecular Beam Epitaxy) or HVPE (Hydride Vapor Phase Epitaxy) The nanostructure 32 also has a top of a cone or polygonal horn, as mentioned above.

3 (e), the step of forming the active layer is a step of forming the active layer 33 on at least a part of the top of the nanostructure 32. The above step forms a quantum structure using metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), or hydride vapor phase epitaxy (HVPE) at 600 to 850 ° C, preferably 650 to 750 ° C. The form of the quantum structure 34 is as described above.

3 (f), the step of forming the p-type gallium nitride semiconductor layer or the quantum barrier layer may include the step of forming the p-type gallium nitride semiconductor 34 or Forming a quantum barrier layer 34, and proceeding to the same process as that for forming the nanostructure.

In Fig. 3 (g), the step of removing the mask layer is a step of dissolving and removing the mask layer 31, and a solution which does not damage the structure other than the mask layer can be applied. Preferably, it may be an HF solution.

3 (h), the step of forming the metal layer is performed by using an electron beam evaporator (e-beam evaporator) to expose the nano structure 32 and the n-type gallium nitride Forming a metal layer 35 on at least a part of the semiconductor layer 20 to form a metal layer 35. The process conditions are not particularly limited in the present invention.

The method includes: forming an n-type metal electrode layer on at least a portion of the n-type gallium nitride semiconductor layer; And forming a p-type metal electrode layer on at least a part of the nano structure layer. Preferably, the n-type metal electrode layer may be formed after forming the nano structure layer. The process conditions are not particularly limited Not shown).

The deposition method and the method for growing the compound according to the present invention use conventional process conditions and are not particularly limited, and those skilled in the art can easily understand the present invention.

Example  One

An n-type GaN template layer (3 μm) was formed on a c-plane sapphire substrate at 1080 ° C. by MOCVD (metal-organic chemical vapor deposition). Subsequently, using PECVD, Si ₃ N ₄ 100 nm (thickness). Next, Si ₃ N ₄ was patterned into a hole pattern by using an imprint lithography method. GaN was grown at 1080 ° C using MOCVD in the hole to form a hexagonal pyramidal GaN nanostructure having an upper end protruding from the hole pattern. An InGaN single quantum well layer and a GaN quantum barrier layer were grown on the GaN pyramid nanostructure of the hexagonal pyramid to obtain a single quantum dot at the apex of the structure. Next, Si ₃ N ₄ The pattern was removed with HF solution (50%) for 15 minutes, and a silver film with a thickness of 40 nm was deposited using an e-beam evaporator. A TEM image of the surface of the quantum optical device was shown in FIG.

Example  2

A quantum optical device was manufactured in the same manner as in Example 1 except that no film was formed.

Character analysis

Numerical Modeling ( Numerical modeling )

>면 방향에 따라 선형적으로 극성화되고, 이는 상기 나노구조체 상의 양자점의 실험적 특징이 된다. 비교 구조체로서, 평면형 GaN 구조체 내에 임베이드된 쌍극자도 동일한 방법으로 시뮬레이션되었다. 또한, 여기서 쌍극자는 GaN 구조체 및 공기와의 계면 아래 11 nm 에서 위치된다. 상기 시뮬레이션된 수지 모델화는 본 발명의 도 5에 제시하였다. Three-dimensional modeling was performed using a conventional finite-difference time-domain method program (Lumerical Solutions). The refractive indices of silver and GaN were modeled by fitting the experimental data (silver: Johnson and Christy, GaN: ref (32)). The order of the structures matched the mean size parameter measured in the SEM. A single dipole is located at 11 nm below the vertex of the structure, which is the position of the quantum dot in the TEM data. The dipole is <

Plane direction, which is an experimental feature of the quantum dot on the nanostructure. As a comparison structure, the dipole imprinted in the planar GaN structure was also simulated in the same way. Also here, the dipole is located at 11 nm below the interface with the GaN structure and air. The simulated resin modeling is shown in Figure 5 of the present invention.

Optical properties

The optical properties of the quantum dots were mounted in a low-vibration cryostat in the temperature range of 7 K to 300 K. The spectra of the quantum dots were measured at 7 K with a low temperature micro-photoluminescence system (Lens: Mitutoyo, 100x, N.A. = 0.5). The excitation laser has a wavelength of 405 nm. The emission spectrum was measured using a monochromator (Acton, SP2500, charge-coupled device (CCD)). The extinction time was measured using Rapid APD (temporal resolution = 40 ps, ID Quantique) coupled to a time-correlated single-photon counting (Picoharp 300, Picoquant) system. The emission spectra, the decay histograms of Micro-PL, and the scatter plot of the wavelength of quantum dot emission versus measured extinction time are shown in FIG.

Referring to FIG. 4, FIGS. 4 (a) to 4 (e) are measured at each step of a hexagonal-shaped nanostructure produced according to Example 1 of the present invention. More specifically, FIG. 4A shows a nanostructure made of GaN having a quantum structure of InGaN. FIG. 4B is an enlarged view of the vertex of the structure shown in FIG. 4A. It can be seen that quantum wells are formed on the quantum dots at the vertices and on the entire upper surface of the structure. 4 (c) is a structure in which Si ₃ N ₄ is selectively etched, and 4 (d) is a structure in which an Ag film is deposited. Fig. 4 (e) schematically shows the structure shown in Fig. 4 (d). That is, in FIG. 4 (e) quantum wells are formed on the quantum dots at the vertices and on the upper surface of the structure, and the combination of the surface plasmon polariton and the quantum structure by the deposition of Ag film is shown.

5 is a graphical representation of a numerical modeling of the plasmon system according to the morphology of the nanostructure and the nanostructure on which the film is deposited. 5 (a) is a surface plot of an electric field of 450 and 481 nm with respect to the nanostructure according to the present invention, and is a cross-sectional intensity profiles of an electric field in logarithmic coordinates. The dotted line indicates the position of the silver film on the nanostructure. FIG. 5B shows spinning enhancement of a dipole according to the conventional planar structure, the nanostructure of the present invention, and the silver film of the present invention (Example 1 and Example 2), and a silver film is formed on the pointed nanostructure It is possible to have a much larger spontaneous emission probability than the dipole of the existing structure. If the spontaneous emission probability is increased, it is possible to fabricate a quantum light source having a high quantum efficiency at a high temperature as well as a possibility of fast repetitive driving.

6, the micro-photoluminescence (&quot; PL &quot;) spectrum according to the deposition of the silver film was measured at 7K according to Example 1 and Example 2, respectively. A sharp peak related to the QD emission, a broad band-shaped background emission peak generated in the InGaN quantum well, and a sharp emission peak related to the QD emission can be confirmed, and the QD emission peak of Example 1 in which the silver film is deposited can be confirmed It can be confirmed that the peak intensity is increased as compared with Example 2.

FIG. 6 (b) is a micro-PL descent time histogram showing the time when the electrons ascending to the conduction band in the QD emit light and descending to the valence band, IRF is the instrument response function, (decay times) versus scatter plot of the wavelength of the quantum dot emission. 6 (b) and 6 (c), it can be seen that the falling time of Example 1 is drastically reduced as compared with that of Example 2, and the average falling time of Example 1 is 234 ± 64 ps , And the average fall time in Example 2 is 4378 + - 2113 ps. Such a Micro-PL descending histogram can confirm a strong "Purcell effect" on the QD over a wide spectral range and is expected to increase the intensity of the emission peak of QD due to this "Purcell effect".

7 shows the "Log-Log plot" of the peak intensity, where the Micro-PL spectrum of the quantum dots with an excitation power of 40 μW, with the line representing the fitting cover and the quadratic behaviors, . In the QD of Example 1, a multi-exciton complex was measured and the intensity of the excitation peak was linearly increased, whereas the intensity of the excitation peak was increased secondarily with excitation power.

Fig. 7 (b) shows the polar origin method for the intensity of the spectrum of a single quantum dot as a function of the polarization direction of light emission. The luminescence according to QD is linearly polarized, and the high polarization ratio (P) shown in the following equation is ~ 0.93. I is the luminescence intensity in the following equation.

Figure 7 (c) shows photon correlation measurements under continuous-wave excitation, where the fitted lines are shown using a second-order coherent function. Reference is made to "A gallium nitride single-photon source operating at 200 K. Nature Mater. 5, 887-892 (2006)", and the value is obtained by applying the following equation. The fitting result of g ⁽²⁾ is 0.19 +/- 0.17 and it can be seen that the QD according to the present invention provides photon ratio multiplicity not previously defined.

10: Quantum optical device
11: substrate
20: n- type gallium nitride semiconductor layer
30: nano structure layer
31: mask layer
32: Nano structure
33:
34: quantum barrier layer / p-type gallium nitride semiconductor layer
35: metal layer

Claims (14)

Board;
An n-type gallium nitride semiconductor layer formed on the substrate; And
And a nano structure layer formed on at least a part of the n-type gallium nitride semiconductor layer,
The nanostructure layer may be formed,
Nanostructures; And
And a metal layer covering at least a part of the nano structure and the n-type gallium nitride semiconductor,
Wherein the nanostructure is a nanostructure having a top in the shape of a cone or a polygonal horn, the active layer comprising a quantum structure in at least a part of the top,
Wherein the quantum structure has a single quantum dot formed at a vertex portion at an upper end of the nanostructure, a quantum well formed at an entire upper surface,
Wherein the metal layer comprises a metal film comprising at least one metal selected from the group consisting of gold, silver and platinum having a surface plasmon,
The metal layer has a thickness of 5 nm to 100 nm,
The surface plasmon polariton of the metal film spontaneously coheres at a vertex portion of the nanostructure where the quantum dots are located and the quantum efficiency and luminescence intensity of the quantum dots are increased by the interaction of the quantum dots and the surface plasmon in the entire substrate ,
Quantum optical device.
delete delete delete The method according to claim 1,
And the lower end of the nanostructure is connected to the n-type gallium nitride semiconductor layer.
The method according to claim 1,
And a p-type gallium nitride semiconductor layer or a quantum barrier layer is further formed on an upper end of the active layer.
The method according to claim 6,
Wherein the quantum barrier layer is an i-type gallium nitride semiconductor.
The method according to claim 1,
Type metal electrode layer formed on at least a part of the n-type gallium nitride semiconductor layer, and a p-type metal electrode layer formed on at least a part of the nano structure layer.
9. The method of claim 8,
The n-type metal electrode layer may include one or more of Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, ITO, And more than one species.
9. The method of claim 8,
The p-type metal electrode layer may be formed of one of Co, Ir, Ta, Cr, Mn, Mo, Tc, W, Re, Fe, Sc, Ti, Sn, Ge, Sb, Al, Pt, Ni, Au, ITO, And more than one species.
11. A method of manufacturing a quantum optical device according to any one of claims 1 to 10,
The method comprises:
Forming an n-type gallium nitride semiconductor layer on a substrate; And
Forming a nano structure layer on at least a portion of the n-type gallium nitride semiconductor layer; Lt; / RTI &gt;
The step of forming the nanostructure layer comprises:
Forming a mask layer on the n-type gallium nitride semiconductor layer;
Patterning the mask layer in a hole pattern shape;
Growing a n-type gallium nitride semiconductor through holes of the hole pattern in which the n-type gallium nitride semiconductor layer is exposed to form a nanostructure;
Forming an active layer having a quantum structure on top of the nanostructure;
Removing the mask layer; And
Forming a metal layer covering at least a part of the nano structure and the n-type gallium nitride semiconductor layer, after the step of removing the mask layer;
Lt; / RTI &gt;
The step of forming the active layer may include growing a quantum well layer on the entire upper surface of the nanostructure to form a single quantum dot at a vertex portion of the upper end,
Wherein the metal layer comprises a metal film comprising at least one metal selected from the group consisting of gold, silver and platinum having a surface plasmon,
The metal layer has a thickness of 5 nm to 100 nm,
The surface plasmon polariton of the metal film spontaneously coheres at a vertex portion of the nanostructure where the quantum dots are located and the quantum efficiency and luminescence intensity of the quantum dots are increased by the interaction of the quantum dots and the surface plasmon in the entire substrate In fact,
A method of manufacturing a quantum optical device.
12. The method of claim 11,
And forming a p-type gallium nitride semiconductor layer or a quantum barrier layer on top of the active layer after the step of forming the active layer.
12. The method of claim 11,
Wherein the mask layer comprises at least one of Si ₃ N ₄ , SiO _{2 ,} TiO ₂ , TiN, and Ti.
12. The method of claim 11,
Forming a n-type metal electrode layer on at least a portion of the n-type gallium nitride semiconductor layer after forming the nano structure layer; And forming a p-type metal electrode layer on at least a part of the nano structure layer.

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