KR101728627B1

KR101728627B1 - Touch sensor

Info

Publication number: KR101728627B1
Application number: KR1020160010506A
Authority: KR
Inventors: 배병성
Original assignee: 호서대학교 산학협력단
Priority date: 2016-01-28
Filing date: 2016-01-28
Publication date: 2017-04-19

Abstract

Provided is a touch sensor capable of sensing a touch. The touch sensor comprises: a first electrode connected to a first scan line of a touchscreen or a touch panel; a second electrode arranged to have a predetermined interval with the first electrode; an insulation material filled between the first electrode and the second electrode; a first transistor having a gate electrode, a semiconductor layer, and a source/drain electrode. The gate electrode of the first transistor is connected to the second electrode; one end of the semiconductor layer is connected to the first scan line through the source/drain electrode; and the other end of the semiconductor layer is connected to a lead out line crossing the first scan line.

Description

Touch sensor {TOUCH SENSOR}

The present invention relates to a touch sensor, and more particularly, to a pixel circuit of a touch sensor that can be used for sensing a touch.

A touch sensor is a technique used in a touch panel or a touch screen to directly input a touch of a user. Such a touch sensor is applied not only to a smart phone but also to various display products such as a personal computer, a notebook PC, an all-in-one (AIO) -PC and a digital information display (DID) Beyond products, applications are expanding to other fields such as automobile market.

The touch sensor technology uses a multifunctional fusion / composite structure with a single electrode layer touch sensor, a flexible touch sensor, a built-in touch sensor, a large area touch sensor, a fingerprint recognition and a tissue tester. And a structure suitable for low cost is additionally required.

In this way, the ability to detect touches is getting stronger and fingerprint recognition technology is being widely used, and a touch sensor technology that can be used as a general touch sensor has been proposed. However, in terms of economy and efficiency, A simple touch sensor circuit is required.

U.S. Patent Publication No. 7,099,497 (Aug. 29, 2006)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a touch sensor having a simple structure that is useful in terms of economy and efficiency.

Another object of the present invention is to provide a touch sensor circuit having a simple structure and excellent performance, which can provide excellent performance while minimizing the number of elements to be used.

Still another object of the present invention is to provide a touch sensor which can be inserted effectively into a gradually decreasing cell pitch and is easy to use even at a small cell pitch.

According to an aspect of the present invention, there is provided a touch sensor in which sensing sensitivity is enhanced by capacitively coupling a gate electrode and a gate line of a transistor in a display pixel or a touch panel pixel. Such a touch sensor can be suitably used even at a small pixel pitch by simplifying the pixel circuit by using only one transistor, and it is possible to secure superior sensing characteristics while using only one transistor.

According to another aspect of the present invention, it is possible to realize a sensor of good sensitivity capable of performing amplification even when only one transistor is used in the configuration of the capacitance sensor using the thin film transistor formed on the substrate. That is, when a gate electrode (scan line) is connected to a certain area of electrodes and a certain area of electrodes connected to the gate electrode of the transistor are arranged at a predetermined interval and a gate pulse (scan pulse) is applied to the scan line, It is possible to provide a touch sensor implemented to induce a voltage change by coupling to an electrode connected to a gate electrode. When such a touch sensor is used, the rising of the gate voltage is reduced while the parasitic capacitance of the sensing electrode side is increased when the towed portion of the fingerprint is touched. When the current is less than when the touch is not made, It is possible to provide a pixel sensor circuit in which the voltage of the gate electrode rises and a large current flows. That is, it is possible to provide a touch sensor circuit which is operated by increasing the voltage or increasing the voltage by increasing the capacitance or parasitic capacitance between the two electrodes (sensing electrodes) at the time of touch.

In one embodiment, the touch sensor may add another transistor connected to a gate electrode of a certain area. In this case, the gate electrode of the other transistor is connected to the next scan line, and one of the two electrodes of the source and the drain is commonly connected to the electrode connected to the gate electrode of the transistor, Line. &Lt; / RTI >

According to another aspect of the present invention, there is provided a touch panel including: a first electrode connected to a first scan line of a touch screen or a touch panel; A second electrode arranged at a predetermined distance from the first electrode; An insulating material filled between the first electrode and the second electrode; And a gate electrode, a semiconductor layer, and a source / drain electrode, wherein the gate electrode is connected to the second electrode, one end of the semiconductor layer is connected to the first scan line through the source / drain electrode, And a first transistor coupled to a lead-out line that intersects the scan line.

In one embodiment, the first electrode, the second electrode, and the insulating material may correspond to a capacitor.

In one embodiment, the semiconductor layer may be comprised of an amorphous semiconductor or a polysilicon semiconductor.

In one embodiment, the first transistor may have a top gate structure.

In one embodiment, the touch sensor may further include a second transistor having a gate electrode, a semiconductor layer, and a source / drain electrode. In this case, the gate electrode of the second transistor is connected to the second scan line located next to the first scan line, one end of the semiconductor layer of the second transistor is connected to the first electrode through the source / drain electrode, And the other end of the semiconductor layer of the transistor may be connected to the second electrode through the source / drain electrode.

According to another aspect of the present invention, there is provided a touch panel including: a first electrode connected to a first scan line of a touch screen or a touch panel; A second electrode arranged at a predetermined distance from the first electrode; An insulating material filled between the first electrode and the second electrode; A source electrode, a drain electrode, a gate electrode, a semiconductor layer, and a source / drain electrode, wherein the gate electrode is connected to the second electrode and one end of the semiconductor layer is connected to the first scan line through the source / drain electrode, A first transistor connected to the readout line crossing the first scan line through the electrode; And a gate electrode, a semiconductor layer, and a source / drain electrode, wherein the gate electrode is connected to a second scan line positioned next to the first scan line, and one end of the semiconductor layer is connected to the first electrode through the source / And the other end of the semiconductor layer is connected to the second electrode through the source / drain electrode.

In one embodiment, the first transistor and the second transistor are sequentially activated by a gate pulse or a scan pulse sequentially applied to the first scan line and the second scan line, and the amount of current flowing in the first transistor is controlled by a first scan line Can be varied depending on the magnitude of the voltage applied to the capacitor.

In one embodiment, the touch sensor may further include a conductive electrode disposed on or under the first electrode or the second electrode and arranged to overlap with a certain area.

According to the present invention, it is possible to provide a touch sensor circuit which can easily constitute a touch sensor in a display pixel in which the pitch of a pixel or a cell is gradually decreasing, and which can be easily applied to a finer pitch even in a separate sensor array configuration. In addition, it is possible to effectively form a sensor array of a fixed number of fine pitches.

Also, according to the present invention, it is possible to provide a capacitive-type touch sensor which is simple in structure, excellent in performance, and economical and efficient in terms of minimizing the number of elements to be used.

1 is a schematic diagram of a pixel circuit (touch sensor circuit) that can be employed in a touch sensor according to an embodiment of the present invention.
FIG. 2 is a schematic view for explaining a change in capacitance due to a touch of a hand, a fingerprint or the like in a touch panel having the touch sensor circuit of FIG. 1;
3 is a diagram illustrating an example of a pixel circuit of a touch sensor in which a transistor is added to improve a stabilization performance according to another embodiment of the present invention.
FIG. 4 is a schematic plan view for explaining a scan electrode pattern applicable to the touch sensor circuit of FIG. 3. FIG.
5 is a schematic plan view for explaining a semiconductor layer pattern applicable to the touch sensor circuit of FIG.
6 is a schematic plan view for explaining a contact hole applicable to the touch sensor circuit of FIG.
7 is a schematic plan view for explaining a source / drain electrode applicable to the touch sensor circuit of FIG.
8 is a schematic plan view for explaining a configuration of an array type touch sensor including the touch sensor circuit of FIG.
9 is a diagram illustrating a pixel circuit of a touch sensor according to another embodiment of the present invention, in which the semiconductor layer is formed of polysilicon.

The present invention described below can make various changes and may have various embodiments. However, for convenience of description, the drawings for specific embodiments are illustrated and described in detail. It is to be understood, however, that the invention is not to be limited to the specific embodiments, and that the invention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a schematic diagram of a pixel circuit (touch sensor circuit) that can be employed in a touch sensor according to an embodiment of the present invention. FIG. 2 is a schematic view for explaining a change in capacitance due to a touch of a hand, a fingerprint or the like in a touch panel having the touch sensor circuit of FIG. 1;

1, a pixel circuit (touch sensor circuit) that can be employed in the touch sensor according to the present embodiment includes a first electrode 10, a second electrode 20, a first capacitor C1, And a transistor T1. The pixel circuit may be applied to a basic or single pixel structure 100 of a touch sensor.

The first electrode 10 and the second electrode 20 may be formed in a similar area in the pixel when viewed on the ground. The first electrode 10 may be referred to as electrode A, upper electrode, or upper electrode. The first electrode 10 is connected to the scan line S1. The second electrode 20 may be referred to as an electrode B, a lower electrode, or a lower electrode. The second electrode 20 is connected to the gate electrode of the first transistor T1.

The first capacitor C1 is formed by a predetermined gap between the first electrode 10 and the second electrode 20. [ The first capacitor C1 has a capacitance by the first electrode 10 and the second electrode 20 and the insulating material located therebetween. The length, spacing and / or area of the first electrode 10 and the second electrode 20 facing each other and the kind of the insulating material can be adjusted to form the first capacitor C1 having the desired capacitance.

The first transistor T1 includes a first electrode, a second electrode, and a gate electrode. The first electrode may be one of a source electrode and a drain electrode, and the second electrode may be the other one of a source electrode and a drain electrode. Hereinafter, the first electrode and the second electrode are referred to as a first source / drain electrode and a second source / drain electrode in the described order, respectively. The first source / drain electrode is connected to the scan line S1 and the second source / drain electrode is connected to the data line D1. The data line D1 may be referred to as a read out line for reading a voltage formed by the first transistor T1 when the touch sensor circuit is activated according to an external touch.

The first transistor T1 may be an N or P type metal oxide semiconductor field effect transistor (MOSFET) having an N type semiconductor material or a channel of a P type semiconductor material, or may be a N type or a P type But is not limited to, a MOSFET of the complementary type. The first transistor T1 may include a semiconductor transistor of a different type or structure that is currently used in a touch screen or a touch panel and can be used in the future.

In this embodiment, the touch sensor circuit may further include an insulating film (see 40 in Fig. 8) disposed on the first electrode 10 and the second electrode 20. The insulating film may function to prevent the electrodes of the touch sensor from being damaged when an external hand is brought into contact with the touch sensor.

The operation principle of the touch sensor circuit of this embodiment will be briefly described as follows.

Capacitance including the capacitance of the first capacitor C1 is formed between the first electrode 10 and the second electrode 20. The capacitance of the first capacitor C1 is set to a predetermined value in a specific pixel portion 100 of the touch sensor 200 2) is touched, the capacitance of the touch sensor portion with which the high portion (or the protruding portion) of the fingerprint is contacted is larger than the relatively low portion (or the depression portion) of the fingerprint.

When an on pulse INp1 is applied to the scan line S1, a turn-on voltage of a predetermined level is applied to the scan line S1, and the first electrode 10 is turned on by the voltage rising in the scan line S1. Will be affected.

When the hand 2 is kept in contact with the specific pixel portions 100 and 102, the capacitance between the electrode and the hand of the pixel is relatively large, and as the magnitude of the capacitance increases, the voltage of the first electrode 10 The voltage of the second electrode 20 does not increase so much that the increase of the voltage applied to the gate electrode of the first transistor T 1 is insignificant. Therefore, the current flowing between the first and second source / drain electrodes of the first transistor T1 also does not increase.

On the other hand, if the hand 2 is not in contact with the specific pixel portions 100 and 102, the capacitance is relatively small, and when the voltage of the first electrode 10 increases, The voltage greatly increases and the voltage applied to the gate electrode of the first transistor T1 increases, so that the current flowing through the first transistor T1 does not increase.

The current flowing through the first transistor T1 is sensed through the lead-out line D1. Through the sensing, the fingerprint can be recognized by the computing device equipped with the touch sensor. In this case, the size of the pixel of the touch sensor may be small enough to recognize the fingerprint of the human hand.

When the first source / drain electrode of the first transistor T1 is connected to the scan line S1 when the gate voltage is increased, the voltage of the scan line S1 is high. Therefore, S1). In this case, a separate power line can be omitted.

Next, when the voltage of the scan line S1 is lowered again, the voltage of the second electrode 20 also varies depending on the capacitance between the two electrodes and the capacitance between the hand and the electrodes, The voltage applied to the gate electrode becomes the off voltage and the first transistor T1 is turned off. That is, when the voltage of the scan line S1 becomes lower than the predetermined level, the power supply voltage of the scan line S1 is also lost, and the first transistor T1 may be in an inactive state . Even if the first transistor T1 is turned on, the voltage of the scan line S1 is lowered and the power source is turned off.

Subsequently, when a scan pulse is applied to the next scan line S2, the operation of the next pixel circuit (touch sensor circuit) can be started.

As described above, each touch sensor circuit sequentially operates, and the current of the first transistor T1 increases due to the gate voltage of each touch sensor circuit, thereby providing a high detection rate. When the scan pulse is lowered, the second electrode 20 is lowered to a lower voltage. At this time, the first electrode 10 maintains the off voltage and the second electrode 20 and the first electrode The second electrode 20 may be connected to the first electrode 10 by a resistance component between the first electrode 10 and the first electrode 10. That is, although the resistance between the first electrode 10 and the second electrode 20 is very large, the capacitance between the two electrodes is very small, so that the potential of the second electrode 20 is lower than that of the first electrode 10 So that stable operation can be performed.

3 is a diagram illustrating an example of a pixel circuit of a touch sensor in which a transistor is added to improve a stabilization performance according to another embodiment of the present invention.

Referring to FIG. 3, the touch sensor circuit according to the present embodiment includes a U-shaped first electrode 10, a first electrode 10 and a second electrode 10 arranged in a fit- A second A capacitor C2a and a second B capacitor C2b and a first transistor T1 and a second transistor T2 arranged between the first electrode 10 and the second electrode 20, .

The first electrode 10, the second electrode 20, the second capacitor C2a, and the first transistor T1, except for the electrode shape of the first electrode, in the touch sensor circuit according to this embodiment, It can correspond to a single transistor touch sensor circuit.

Since the first electrode 10 has a U-shape and the second electrode 20 is inserted in the middle of the U-shape, the second capacitor 20a is connected between the first electrode 10 and the second electrode 20, The second capacitor C2b is further formed. The 2a capacitor C2a and the 2b capacitor C2b may be substantially or substantially the same.

The second transistor T2 includes a first source / drain electrode, a second source / drain electrode, and a gate electrode. The first source / drain electrode of the second transistor T2 is connected to the first electrode 10, the second source transistor electrode is connected to the second electrode 20, and the gate electrode of the second transistor T2 is connected to the first transistor T1. (Hereinafter, referred to as a second pixel circuit) arranged adjacent to a specific pixel circuit (hereinafter, referred to as a first pixel circuit) included in the pixel circuit.

The touch sensor circuit according to the present embodiment further includes a second transistor T2 connected to a gate line and a scan line S2 following a scan line S1 of a touch sensor circuit including a single transistor, The potential of the second electrode 20 is more reliably held at the off voltage potential by using the second voltage T2.

That is, when the voltage of the second scan line S2 rises, the voltage of the first scan line S1 is off voltage and the voltage level of the first scan line S1 is decreased. The gate voltage of the second transistor S2 connected to the scan line S2 rises to turn on the second transistor T2.

Thus, the two source / drain electrodes of the second transistor T2 are connected to the first electrode 10 and the second electrode 20, respectively. That is, when a voltage of a predetermined level is applied to the second scan line S2, the first electrode 10 is connected to the first scan line S1, and the second electrode 20 is connected to the first electrode 10 And has an off voltage level equal to the potential.

As a method of manufacturing the above-described touch sensor circuit, a method of using a bottom gate process of an amorphous silicon thin film transistor or an oxide thin film transistor will be described as an example.

In the following description, the touch sensor circuit may have a configuration including a first electrode and a second electrode used in the touch sensor circuit of FIG. 3, and a first transistor used in the touch sensor circuit of FIG.

4 is a schematic plan view illustrating a scan electrode pattern that can be applied to a touch sensor circuit according to another embodiment of the present invention. 5 is a schematic plan view for explaining a semiconductor layer pattern applicable to the touch sensor circuit of FIG. 6 is a schematic plan view for explaining a contact hole applicable to the touch sensor circuit of FIG. 7 is a schematic plan view for explaining a source / drain electrode applicable to the touch sensor circuit of FIG.

As shown in FIG. 4, in the bottom gate process, a gate electrode of a transistor and an electrode for a scan line can be formed using a conductive material (S11). That is, the conductive pattern 31 as shown in FIG. 4 may be formed in each pixel structure of the touch sensor. The conductive pattern 31 may be used as a gate electrode of the first scan line, the first electrode, the second electrode, and the first transistor.

Next, as shown in FIG. 5, a gate insulating film (not shown) covering the conductive pattern may be placed and the semiconductor layer 32 may be deposited on the gate electrode portion of the conductive pattern (S12). The semiconductor layer 32 may be formed in a rectangular pattern as shown in FIG. 5, but is not limited thereto.

The gate insulating layer may be formed by a conventional deposition method such as plasma enhanced chemical vapor deposition (PECVD), sputtering, or ALD (atomic layer deposition). The gate insulating film may also be formed by coating and curing the insulating solution. As a material of the gate insulating film, at least one material selected from silicon nitride, a silicon oxide film, an aluminum oxide film, an organic insulating film, and the like can be used.

The semiconductor layer 32 may be formed using amorphous silicon or may be formed using an oxide semiconductor. The semiconductor layer 32 may be formed using an organic semiconductor, a compound semiconductor, or the like. The semiconductor layer 32 may be formed in a pattern as shown in FIG. 5 through an etching process after the semiconductor material is widely formed.

Next, as shown in Fig. 6, the contact hole 33 can be formed in the insulating film covering the conductive pattern portion corresponding to the first electrode, the first scan line, or both (S13). The contact hole 33 may be formed at a point where the first source / drain electrode of the first transistor and the first scan line can be in contact with each other by partially etching the insulating film as shown in FIG.

Next, as shown in Fig. 7, a pattern 34 can be formed by depositing a metal for source / drain electrodes and a lead-out wiring (S14). The pattern 34 may have the shape shown in FIG. 7 through the etching process after the deposition, but the present invention is not limited thereto. The pattern 34 may be used as a data line or a lead-out line, and as a source / drain electrode.

In addition, when the conductive pattern 34 or the conductive electrode using the conductive pattern 34 is formed so as to overlap with a certain area over or below the first electrode or the second electrode, parasitic capacitance electrically connected in parallel to the scan line is additionally generated So that the capacitance between the first electrode and the second electrode can be increased. That is, when the scan pulse is applied to the scan line, the voltage of the second electrode rises with the increase of the capacitance between the first electrode and the second electrode. At this time, the capacitance of the second electrode is changed between the first electrode and the second electrode When the capacitance of the second electrode is increased and the capacitance of the second electrode is sufficiently larger than the capacitance between the first electrode and the second electrode at the time of touch, the voltage of the second electrode does not rise substantially do. In this way, in order to control the capacitance between the first electrode and the second electrode well, a third electrode (conductive electrode) that spans between the first electrode and the second electrode is disposed to electrically connect the first electrode or the second electrode The capacity can be increased. Such an embodiment can be advantageously used when the pixel size or the pixel pitch is relatively small and the first electrode and the second electrode are formed on the same plane and the capacitance is insufficient.

According to the above-described manufacturing process, it is possible to provide a touch sensor circuit of a new structure composed of the first electrode, the second electrode, and one transistor.

8 is a schematic plan view for explaining a configuration of an array type touch sensor including the touch sensor circuit of FIG.

Referring to FIG. 8, it can be seen that the touch sensor 200 according to the present embodiment includes a plurality of touch sensor circuits arranged in an array form. The touch sensor 200 includes a first scan line S1, a second scan line S2, a third scan line S3, and a fourth scan line S4 that are spaced from each other and extend in a first direction. can do. The touch sensor 200 may include a first lead-out line D1, a second lead-out line D2, and a third lead-out line D3 that are spaced apart from each other and extend in a second direction .

The first group of the plurality of scan lines S1 to S4 and the second group of the plurality of lead out lines D1 to D3 may be arranged such that the extending direction of the first group and the extending direction of the second group cross And a touch sensor circuit (pixel circuit of a touch sensor) including a first electrode, a second electrode, and a first transistor may be provided in each pixel region between the intersection lines of the array type.

A protective film or an insulating film 40 may be deposited on the touch sensor 200. This insulating film can protect the pattern or structure of the touch sensor from external contamination.

9 is a diagram illustrating a pixel circuit of a touch sensor according to another embodiment of the present invention in which a semiconductor layer of a first transistor of a top gate structure is formed of polysilicon.

9, the touch sensor 200A according to the present embodiment includes a first electrode 10 connected to a first scan line S1, a second electrode 20, a first capacitor C3, And a pixel circuit composed of a transistor. The first electrode 10 has an L shape, and the second electrode 20 has an L shape but is not limited thereto. The gate electrode 31g of the first transistor may be formed integrally with the second electrode 20 as a part of the conductive pattern so that the combination of the second electrode 20 and the gate electrode may have a U-shape.

The first capacitor C3 is formed by an interval between the first electrode 10 and the second electrode 20 and an insulating film interposed therebetween. Here, the insulating film may be referred to as an insulating material, an insulating layer, or the like.

The first transistor has a top gate structure. In this case, the gate electrode 31g of the first transistor and the source / drain electrode 34s are disposed on the same side of the semiconductor layer 32 forming the channel.

The source / drain electrode 34s is connected to the first scan line S1 by the contact hole 33. [ The source / drain electrode 34s is connected to one end of the semiconductor layer 32 through a plurality of contact holes 33a. The other end of the semiconductor layer 32 may be directly connected to the first lead-out line D1 through a plurality of contact holes 33b. Here, it is assumed that each contact hole includes a conductive contact filled in the hole. The conductive contact inside the contact hole can function as a source / drain electrode that directly connects the semiconductor layer with the external electrode or line in accordance with the implementation.

When the source / drain electrodes 34s and the first lead-out line D1 are connected to each other using the plurality of contact holes at both ends of the semiconductor layer 32, a plurality of charges are transferred in the semiconductor layer 32 formed of polysilicon Paths or channels may be formed so that charges are easily transferred from the semiconductor layer 32 even if defects or cracks are generated in the semiconductor layer 32. [

Thin film transistors are widely used in displays and can be used for sensor arrays, touch sensors and the like as described above. In this embodiment, the thin film transistor may be used to detect the touch of the surface, such as fingerprint recognition.

According to the present embodiment, since a plurality of transistors are usually used in a conventional touch sensor, it is possible to effectively solve the problem that the smaller the pixel size of the touch screen or the touch panel becomes, the more difficult it becomes to apply. That is, the touch sensor circuit according to the present embodiment can use only one transistor, and a sensor array having a high sensitivity can be obtained by amplifying only one transistor. Thus, the touch sensor circuit can be used for fingerprint recognition in a narrow and small area.

Meanwhile, in the above-described embodiments, the touch sensor may further include a power supply unit for supplying a voltage or a pulse to the scan line, and a voltage detection unit for detecting the voltage of the lead-out line.

It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention as defined by the following claims . It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive.

Claims

A first electrode connected to a first scan line of the touch screen or the touch panel;
A second electrode arranged at a predetermined interval from the first electrode;
An insulating material filled between the first electrode and the second electrode; And
And a gate electrode, a semiconductor layer, and a source / drain electrode, wherein the gate electrode is connected to the second electrode and one end of the semiconductor layer is connected to the first scan line through a source / drain electrode, And a first transistor connected to a lead-out line whose other end crosses the first scan line,
Further comprising a second transistor having a gate electrode, a semiconductor layer and a source / drain electrode,
A gate electrode of the second transistor is connected to a second scan line positioned after the first scan line, one end of the semiconductor layer of the second transistor is connected to the first electrode through a source / drain electrode, And the other end of the semiconductor layer of the second transistor is connected to the second electrode through a source / drain electrode.

The method according to claim 1,
Wherein the first electrode, the second electrode, and the insulating material correspond to a capacitor.

The method according to claim 1,
Wherein the semiconductor layer is made of an amorphous semiconductor or a polysilicon semiconductor.

The method according to claim 1,
Wherein the first transistor comprises a top gate structure.

delete

A first electrode connected to a first scan line of the touch screen or the touch panel;
A second electrode arranged at a predetermined interval from the first electrode;
An insulating material filled between the first electrode and the second electrode;
A source electrode, a drain electrode, a gate electrode, a semiconductor layer, and a source / drain electrode, wherein a gate electrode is connected to the second electrode and one end of the semiconductor layer is connected to the first scan line through a source / drain electrode, A first transistor connected to a readout line crossing the first scan line through a second scan electrode / drain electrode; And
A gate electrode, a semiconductor layer, and a source / drain electrode, wherein a gate electrode is connected to a second scan line positioned next to the first scan line, one end of the semiconductor layer is connected to the first electrode through the source / And the other end of the semiconductor layer is connected to the second electrode through a source / drain electrode.
Touch sensor.

The method of claim 6,
Wherein the first transistor and the second transistor are sequentially activated by a gate pulse or a scan pulse sequentially applied to the first scan line and the second scan line, A touch sensor that varies with the magnitude of the voltage across the line.

The method according to claim 1,
Further comprising a conductive electrode on which an insulating film is placed above or below the first electrode or the second electrode and which overlaps a certain area.