KR101725476B1 - Rectifier for harvesting of rf energy - Google Patents

Rectifier for harvesting of rf energy Download PDF

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KR101725476B1
KR101725476B1 KR1020150153975A KR20150153975A KR101725476B1 KR 101725476 B1 KR101725476 B1 KR 101725476B1 KR 1020150153975 A KR1020150153975 A KR 1020150153975A KR 20150153975 A KR20150153975 A KR 20150153975A KR 101725476 B1 KR101725476 B1 KR 101725476B1
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South Korea
Prior art keywords
voltage
negative feedback
rectifier
section
load resistance
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KR1020150153975A
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Korean (ko)
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서암석
정용채
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전북대학교산학협력단
주식회사 라인인포
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/145—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M7/155—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H02J17/00—
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/12—Arrangements for reducing harmonics from ac input or output
    • H02M1/126—Arrangements for reducing harmonics from ac input or output using passive filters
    • H02M2001/0003—

Abstract

The present invention relates to a rectifier capable of rectifying an RF (frequency) signal to a DC (direct current) voltage, and more particularly to a rectifier capable of rectifying a RF The present invention relates to a rectifier for harvesting an RF energy, which includes a rectifying circuit capable of reducing loss due to a threshold voltage and increasing rectification efficiency.

Description

RECIFIER FOR HARVESTING OF RF ENERGY -

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rectifier capable of rectifying an RF (Frequency) signal to a DC (direct current) voltage, and more particularly, to a CMOS metal oxide semiconductor field effect transistor (Hereinafter referred to as " MOSFETs ") for reducing losses caused by a threshold voltage (Threshold Voltage), thereby increasing the efficiency of rectification.

In the present invention, the rectifying circuit includes a receiving unit 10 for receiving an RF signal; A DC voltage converting unit 20 for converting an RF signal received by the crossing operation of a plurality of elements to a DC voltage at the next stage of the receiving unit 10; A negative feedback section 30 for feedbacking the DC voltage converted by the DC voltage conversion section 20; A low-pass filter 40 for blocking the DC voltage negatively fed back through the negative feedback unit 30 and harmonic components generated in the DC voltage converter 20; A load resistance section 50 positioned at the next stage of the low-pass filter section 40 and having a predetermined load resistance value; And a voltage output unit 60 which is located at the next stage of the load resistance unit 50 and outputs a DC voltage that has passed through the low-pass filter unit 40. [

In general, a rectifier is a device or device that converts alternating currents that change periodically in both positive and negative directions into a direct current having only a single direction.

Such rectifiers may be classified into (a) semiconductor rectifiers using a rectifier that occurs near the junction of a semiconductor and a metal or two types of semiconductors, such as silicon (sillicon), selenium (Se), and copper oxide, (b) an electron tube rectifier that can only obtain a unidirectional current flowing from the anode to the cathode, and (c) a mechanical rectifier that achieves the purpose of rectification by using a contactor that is opened or closed synchronously with the period of the AC power source.

Such a rectifier was developed in 1984 by NEW MAR in the United States and has been continuously evolving. In recent years, a technology for transmitting and receiving predetermined information through a radio frequency (RF) has been developed Therefore, research has been continuing while evolving the rectifier to rectify the received frequency to electric power.

Related to the technique for rectifying the frequency by electric power, Japanese Unexamined Patent Application Publication No. 2000-0030325 describes a configuration circuit for converting a radio frequency into a DC voltage to charge the battery.

The above-described technique describes a method of receiving a radio frequency through an antenna, converting the received radio frequency into a DC voltage by detecting the radio frequency by a detection diode, boosting the voltage to a charging voltage required by the battery, and charging the battery.

Various diode configurations have been applied to convert frequencies to DC voltages as described above. In recent years, Schottky diodes, which can lower the threshold voltage to improve the efficiency of voltage conversion, have been used.

In recent years, in order to reduce the power consumption of the rectifier circuit, enable high-speed operation, and design a rectifier excellent in the noise rejection ratio, it is possible to integrate the frequency by applying the CMOS technology. The application of Schottky diodes limits the use of Schottky diodes due to the problem of increased manufacturing costs and the difficulty of process technology.

Accordingly, since the threshold voltage can not be lowered in realizing the rectifier, there is a problem that the conversion efficiency is lowered.

Therefore, it is necessary to research and develop a technology capable of lowering the threshold voltage while integrating the frequency by applying the CMOS technology. Accordingly, in order to achieve the above-mentioned R & D purpose, And to develop a rectifier that can enhance the body effect.

Patent Document 2: JP-A-2000-0030325 (Jun.

An object of the present invention is to provide a rectifier capable of rectifying an RF (frequency) signal to a DC (direct current) voltage, more specifically, to a rectifier capable of rectifying a threshold voltage And a rectifier circuit capable of reducing the loss due to the rectifier circuit and increasing the efficiency of the rectification.

According to an aspect of the present invention, there is provided a rectifier including a rectifier circuit for rectifying an RF signal to a DC voltage, the rectifier circuit including a receiver for receiving an RF signal, ; A DC voltage converting unit (20) located at a plurality of stages at the next stage of the receiving unit (10) and converting an RF signal received by a plurality of crossing operations into a DC voltage; A negative feedback section (30) for negative feedback of the DC voltage converted by the DC voltage conversion section (20); A low pass filter (40) for blocking a DC voltage negatively fed through the negative feedback part (30) and a harmonic component generated in the DC voltage converting part (20); A load resistance section 50 positioned at the next stage of the low-pass filter section 40 and having a predetermined load resistance value; And a voltage output unit 60 disposed at the next stage of the load resistance unit 50 and outputting a DC voltage having passed through the low-pass filter unit 40.

By using the rectifier for harvesting the RF energy according to the present invention, in the implementation of the rectifier capable of receiving the RF signal of 2.44 GHz, the loss due to the threshold voltage can be reduced without using the Schottky diode through the negative feedback technique It has the effect of being able to.

That is, according to the present invention, there is an advantage that the conversion efficiency can be secured up to 30% at an input power of 0 dBm.

1 shows a circuit configuration of a rectifier for harvesting RF energy according to the present invention.
FIG. 2 shows a simulation result of the energy conversion efficiency according to the width of the CMOS MOSPET constituting the DC voltage converter in the rectifier for harvesting the RF energy according to the present invention.
FIG. 3 is a frequency spectrum showing the presence or absence of a low-pass filter in a rectifier for harvesting RF energy according to the present invention.
4 shows the energy conversion efficiency according to the load resistance value in the rectifier for harvesting the RF energy according to the present invention.
Figure 5 shows the output of the DC voltage measured through a rectifier for harvesting RF energy according to the present invention.
FIG. 6 is a graph illustrating a measurement result of the conversion efficiency according to the input current in the rectifier for harvesting the RF energy according to the present invention.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings and the inventor can properly define the concept of the term to describe its invention in the best possible way And should be construed in accordance with the principles and meanings and concepts consistent with the technical idea of the present invention.

Therefore, the embodiments described in the present specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and are not intended to represent all of the technical ideas of the present invention. Therefore, various equivalents And variations are possible.

Before describing the present invention with reference to the accompanying drawings, it should be noted that the present invention is not described or specifically described with respect to a known configuration that can be easily added by a person skilled in the art, Let the sound be revealed.

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rectifier capable of rectifying an RF (frequency) signal to a DC (direct current) voltage, and more particularly to a rectifier capable of rectifying a RF To a rectifier for harvesting RF energy, including a rectifier circuit capable of reducing losses and increasing the efficiency of rectification.

The rectifier according to the present invention is designed using a 0.11 micron process of the Dongbu HiTec RF CMOS. It has an operating RF signal of 2.44 GHz, has a conversion efficiency of 30% at an input power of 0 dBm (decibles above 1 milliwatt) Is designed to be 0.7V.

In addition, the present invention may be configured as a chip, and its size may be 780 x 640 탆 2 . The simulation and layout programs used to design these rectifier circuits were based on Cadence Specter and Virtuoso programs.

Prior to the description, the above-described rectifying circuit can be designed in a CMOS (Complementary Metal-Oxide Semiconductor) process, in which a p-channel MOS transistor and an n-channel MOS transistor are insulated from each other and operate complementarily It is known that the power consumption is about ㎼, the operation speed is high, and the noise rejection is good.

Although a Schottky diode having a low threshold voltage is applied in a general RF signal rectification circuit, the use of the Schottky diode is limited in the rectifier circuit using the above-described CMOS process because of manufacturing cost and process technology.

Therefore, it is necessary to reduce the loss due to the threshold voltage without using the Schottky diode. In the present invention, the body bias feedback circuit technique of applying the DC voltage converted from the RF signal to the MOSFET body by negative feedback is applied Thereby reducing the loss due to the threshold voltage through the body bias.

First, Equation (1) below is a formula for expressing a MOSFET threshold voltage according to a body effect in a normal CMOS process.

Here, the body effect can also be referred to herein as body bias, which means that the threshold voltage is reduced according to the optimized width of the MOSFET body M1, M2.

Figure 112015107029379-pat00001

In Equation (1), V TH0 , r, Φ F , and V SB represent the initial threshold voltage, the body effect coefficient, the potential of the surface of the silicon substrate, and the potential difference between the source and the body of the MOSFET when the potential difference is 0V, respectively.

At this time, V TH0 , r, and? F are values that are transferred in the manufacturing process and can not be arbitrarily changed because they are determined by the doping concentration of the silicon substrate, the charge amount of the depletion region, and work function of the silicon substrate.

However, the threshold voltage of the MOSFET can be arbitrarily adjusted during circuit design through V SB , which is the potential difference between the source and the body.

Prior to this, the expression of the threshold voltage of the fixed value? F and the arbitrary adjustable threshold voltage V SB is as follows.

Figure 112015107029379-pat00002

Figure 112015107029379-pat00003

Figure 112015107029379-pat00004

Referring to the above equation (2), when V SB is -2Φ F It can be seen that the threshold voltage V TH is smaller than the threshold voltage V TH0 of a general MOSFET when the voltage V SB is within the range of V SB <0. In particular, when V SB is -2Φ F , Value. &Lt; / RTI &gt;

Figure 112015107029379-pat00005

The rectifier for harvesting the RF energy according to the present invention, which can improve the voltage conversion efficiency by reducing the threshold voltage through the above-described equation, includes a receiving unit 10, a DC voltage converting unit 20, a negative feedback unit 30, a low-pass filter 40, a load resistor 50, and a voltage output unit 60. Preferably, the circuit of FIG. Can be implemented.

1 shows a circuit configuration of a rectifier for harvesting RF energy according to the present invention.

The receiving section 10 can receive RF signals in the 2.44 GHz region at one end of the circuit. The receiver 10 may be constructed using a transmission line and a chip capacitor having a high Q-index, and has a high reflection characteristic at an RF signal of 2.44 GHz.

The DC voltage converting unit 20 may be configured in the form of a MOSFET device located at the next stage of the receiving unit 10. [

Here, the MOSFET is a generic term of a metal oxide semiconductor field effect transistor (MOS), and allows the RF signal received by the crossing operation of the DC voltage converter 20 to be converted into a DC voltage.

1, the DC voltage converting unit 20 may be composed of an M1 body and an M2 body. The converted DC voltage is applied to the M1 body and the M2 body through the negative feedback unit 30 to be described later .

Here, a potential difference is generated in the DC voltage applied to the M1 body and the M2 body. By reducing the threshold voltage at the input power of 0dBm selected according to Equation (2), loss can be minimized and conversion efficiency can be increased.

At this time, the DC voltage converter 20 needs to optimize the widths of the M1 body and the M2 body so that the input power does not become too low or higher than 0 dBm. In the present invention, the width of the M1 body is set to 50 mu m And the width of the M2 body is 30 占 퐉.

FIG. 2 shows a simulation result of the energy conversion efficiency according to the width of the DC voltage converter in the rectifier for harvesting the RF energy according to the present invention. Referring to FIG.

Referring to FIG. 2, when the width of the M1 body is 50 占 퐉 and the width of the M2 body is 30 占 퐉, the conversion efficiency exceeds 40% at an input power of 0 dBm.

The negative feedback unit 30 negatively feeds back the DC voltage (output voltage) that is converted and output through the DC voltage converter 20 and supplies the DC voltage to the DC voltage converter 20 including the M1 body and the M2 body And is shown in Fig. 1 as Rf and Cf.

Here, Rf is a means for re-applying the DC voltage output from the M1 body to the M1 body, and Cf is a means for re-applying the DC voltage output from the M2 body to the M2 body.

At this time, a potential difference may be generated between the M1 body and the M2 voltage applied to the M2 body. When the widths of the M1 body and the M2 body are determined to be 50 mu m and 30 mu m, respectively, the input of 0dBm determined based on the above- In power, the threshold power is reduced so that the losses can be minimized.

The low-pass filter 40 may function to cut off the direct-current voltage that is negatively fed back and the harmonic components generated by the DC voltage converter 20.

The low-pass filter 40 includes a means (L lpf ) for blocking the DC voltage output from the M1 body and the harmonic component generated from the M1 body by negative feedback and a DC voltage output from the M2 body And a means (C lpf ) for blocking generated harmonic components.

As shown in FIG. 3 of the accompanying drawings, the low-pass filter 40 has a structure in which the low-pass filter 40 is not provided because the DC voltage is negatively fed back from the M1 body and the M2 body, The near-linear spectrum is shown.

FIG. 3 is a frequency spectrum showing the presence or absence of a low-pass filter in a rectifier for harvesting RF energy according to the present invention.

On the other hand, in the implementation of the rectifier using the CMOS process as described above, the power conversion efficiency has a large influence on the width ratio of the MOSFETs M1 and M2 or the value of the load resistance constituting the DC voltage converter 20.

However, since the widths M1 and M2 of the MOSFETs constituting the DC voltage converter 20 are optimized based on the above-described equation for the input power of 0 dBm set in the present invention, the load resistance value is optimized Be able to.

To this end, the load resistor unit 50 is formed at the next stage of the low-pass filter unit 40, and FIG. 4 of the accompanying drawings is attached to set the load resistor value applied to the load resistor unit 50 at this time.

4 shows the energy conversion efficiency according to the load resistance value in the rectifier for harvesting the RF energy according to the present invention.

According to FIG. 4 of the accompanying drawings, the larger the load resistance value, the higher the energy conversion efficiency at a small input power. This efficiency decreases gradually as the input power increases.

In the present invention, 4 k [Omega] or 8 k [Omega] shows a conversion efficiency of 35% or more at an input power of 0 dBm as a target power, and is appropriate as a load resistance value of the load resistance section 50.

The voltage output unit 60 outputs the converted DC voltage, and can output a DC voltage of 0.7 V at 0 dBm which is the target input power.

This can be referred to FIG. 5 of the accompanying drawings, which shows the output of the DC voltage measured through the rectifier for the harvesting of the RF energy according to the invention.

In order to understand the reason why the input power is set to 0 dBm in the present invention configured as above, reference is made to FIG. 6 of the accompanying drawings.

FIG. 6 is a graph illustrating a measurement result of the conversion efficiency according to the input current in the rectifier for harvesting the RF energy according to the present invention.

FIG. 6 of the accompanying drawings shows a simulation capable of predicting the result of mobility change of the DC voltage conversion portion with respect to the layout of the designed circuit (see FIG. 1), whereby a conversion of more than 30% And the mobility of the DC voltage converter is faster than the given typical value at the input power in this category.

Among them, the conversion efficiency is the highest near 0dBm input power, and the conversion efficiency is decreased at the input power which is much smaller than this, and exceeds the representative value at the large input power.

1 to 6 are merely the main points of the present invention. As various designs can be made within the technical scope of the present invention, the present invention is limited to the configurations of Figs. 1 to 6 It is self-evident.

10: Receiver
20: DC voltage conversion section
30: negative feedback part
40: Low-pass filter
50: Load resistance section
60: Voltage output section

Claims (6)

A rectifier comprising a rectifying circuit for rectifying an RF signal to a DC voltage,
The rectifying circuit includes:
A receiver 10 for receiving an RF signal;
A DC voltage converting unit (20) for converting the RF signal received by the crossing operation of a plurality of elements to a DC voltage at the next stage of the receiving unit (10);
A negative feedback section (30) for negative feedback of the DC voltage converted by the DC voltage conversion section (20);
A low pass filter (40) for blocking a DC voltage negatively fed through the negative feedback part (30) and a harmonic component generated in the DC voltage converting part (20);
A load resistance section 50 positioned at the next stage of the low-pass filter section 40 and having a predetermined load resistance value; And
And a voltage output unit (60) located at the next stage of the load resistance unit (50) and outputting a DC voltage having passed through the low - pass filter unit (40)
The DC voltage converter 20 converts the DC voltage
Wherein the width of M1 and M2 is such that the width of M1 body is greater than the width of M2 body so as to obtain a maximum output DC voltage at the target input power,
For the expression below representing the threshold voltage,
And the smallest threshold voltage when V SB is -2? F.
Figure 112017010207754-pat00013

(Where V TH0 = initial threshold voltage, r = body effect coefficient, Φ F = potential of silicon substrate surface, and V SB = potential difference between source and body of MOSFET).
delete The method according to claim 1,
The sub-feedback section (30)
Means for re-applying an input power of 0dBm to the M1 body based on a DC voltage output from the MOSFET M1 body constituting the DC voltage converter 20 so as to perform negative feedback; And
Means for re-applying an input power of 0dBm to the M2 body based on the DC voltage output from the M2 body for negative feedback. &Lt; RTI ID = 0.0 &gt; 11. &lt; / RTI &gt;
The method according to claim 1,
The low-pass filter (40)
Means for blocking the DC voltage output through the M1 body and the harmonic components generated in the M1 body by negative feedback; And
And means for blocking the DC voltage output through the M2 body and the harmonic components generated from the M2 body by negative feedback.
The method according to claim 1,
The predetermined load resistance value of the load resistance section (50)
So that the power obtained at the voltage output section (60) is optimized.
delete
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11210493B2 (en) 2019-08-23 2021-12-28 Sisoul Co., Ltd. Fingerprint recognition card

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000030325A (en) 2000-02-22 2000-06-05 장경원 Component circuit for charging battery by converting radio frequency into DC voltage
KR101238686B1 (en) * 2011-05-31 2013-03-04 명지대학교 산학협력단 Antennaless Radio Frequency Energy Harvesting System using On-Board LC Tank

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000030325A (en) 2000-02-22 2000-06-05 장경원 Component circuit for charging battery by converting radio frequency into DC voltage
KR101238686B1 (en) * 2011-05-31 2013-03-04 명지대학교 산학협력단 Antennaless Radio Frequency Energy Harvesting System using On-Board LC Tank

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
논문1 *
논문2 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11210493B2 (en) 2019-08-23 2021-12-28 Sisoul Co., Ltd. Fingerprint recognition card

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