KR101706987B1 - Preparing method of liquid composition for stripping an organic dielectric layer - Google Patents
Preparing method of liquid composition for stripping an organic dielectric layer Download PDFInfo
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- KR101706987B1 KR101706987B1 KR1020090051254A KR20090051254A KR101706987B1 KR 101706987 B1 KR101706987 B1 KR 101706987B1 KR 1020090051254 A KR1020090051254 A KR 1020090051254A KR 20090051254 A KR20090051254 A KR 20090051254A KR 101706987 B1 KR101706987 B1 KR 101706987B1
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- insulating film
- organic insulating
- ether
- glycol
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000203 mixture Substances 0.000 title claims description 21
- 239000007788 liquid Substances 0.000 title claims description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims abstract description 42
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 claims abstract description 13
- 238000003756 stirring Methods 0.000 claims abstract description 13
- 150000001412 amines Chemical class 0.000 claims abstract description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- 150000003839 salts Chemical class 0.000 claims abstract description 6
- 238000010992 reflux Methods 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 16
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 6
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 3
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical group COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- 239000012258 stirred mixture Substances 0.000 claims description 3
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- XYVAYAJYLWYJJN-UHFFFAOYSA-N 2-(2-propoxypropoxy)propan-1-ol Chemical compound CCCOC(C)COC(C)CO XYVAYAJYLWYJJN-UHFFFAOYSA-N 0.000 claims description 2
- MIJDSYMOBYNHOT-UHFFFAOYSA-N 2-(ethylamino)ethanol Chemical compound CCNCCO MIJDSYMOBYNHOT-UHFFFAOYSA-N 0.000 claims description 2
- COBPKKZHLDDMTB-UHFFFAOYSA-N 2-[2-(2-butoxyethoxy)ethoxy]ethanol Chemical compound CCCCOCCOCCOCCO COBPKKZHLDDMTB-UHFFFAOYSA-N 0.000 claims description 2
- FMVOPJLFZGSYOS-UHFFFAOYSA-N 2-[2-(2-ethoxypropoxy)propoxy]propan-1-ol Chemical compound CCOC(C)COC(C)COC(C)CO FMVOPJLFZGSYOS-UHFFFAOYSA-N 0.000 claims description 2
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 2
- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical compound COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- KCBPVRDDYVJQHA-UHFFFAOYSA-N 2-[2-(2-propoxyethoxy)ethoxy]ethanol Chemical compound CCCOCCOCCOCCO KCBPVRDDYVJQHA-UHFFFAOYSA-N 0.000 claims description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- PYSGFFTXMUWEOT-UHFFFAOYSA-N 3-(dimethylamino)propan-1-ol Chemical compound CN(C)CCCO PYSGFFTXMUWEOT-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical compound CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 2
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 2
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims description 2
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- JLGLQAWTXXGVEM-UHFFFAOYSA-N triethylene glycol monomethyl ether Chemical compound COCCOCCOCCO JLGLQAWTXXGVEM-UHFFFAOYSA-N 0.000 claims description 2
- JKEHLQXXZMANPK-UHFFFAOYSA-N 1-[1-(1-propoxypropan-2-yloxy)propan-2-yloxy]propan-2-ol Chemical compound CCCOCC(C)OCC(C)OCC(C)O JKEHLQXXZMANPK-UHFFFAOYSA-N 0.000 claims 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 claims 1
- BFSVOASYOCHEOV-UHFFFAOYSA-N 2-diethylaminoethanol Chemical compound CCN(CC)CCO BFSVOASYOCHEOV-UHFFFAOYSA-N 0.000 claims 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims 1
- 239000002184 metal Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 9
- 238000009413 insulation Methods 0.000 abstract description 2
- 150000003242 quaternary ammonium salts Chemical class 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- DJCYDDALXPHSHR-UHFFFAOYSA-N 2-(2-propoxyethoxy)ethanol Chemical compound CCCOCCOCCO DJCYDDALXPHSHR-UHFFFAOYSA-N 0.000 description 1
- WFSMVVDJSNMRAR-UHFFFAOYSA-N 2-[2-(2-ethoxyethoxy)ethoxy]ethanol Chemical compound CCOCCOCCOCCO WFSMVVDJSNMRAR-UHFFFAOYSA-N 0.000 description 1
- DEXFNLNNUZKHNO-UHFFFAOYSA-N 6-[3-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperidin-1-yl]-3-oxopropyl]-3H-1,3-benzoxazol-2-one Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1CCN(CC1)C(CCC1=CC2=C(NC(O2)=O)C=C1)=O DEXFNLNNUZKHNO-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000012257 stirred material Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/72—Ethers of polyoxyalkylene glycols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
본 발명은 유기절연막 박리액의 제조방법에 관한 것으로, 특히 a) 환류장치가 구비된 가압조건의 교반기 내에서 테트라메틸 암모늄 하이드록사이드(TMAH) 또는 이의 염, 글리콜 에테르 및 물을 고온에서 교반하는 단계; b) 상기 a)단계의 교반 후 실온으로 냉각된 교반물에 수용성 아민을 첨가하는 단계;를 포함하는 것을 특징으로 하는 유기절연막 박리액의 제조방법 및 이에 의하여 제조된 유기절연막 박리액에 관한 것이다. The present invention relates to a method for producing an organic insulating film peeling solution, and more particularly, to a method for producing an organic insulating film peeling solution, which comprises: a) stirring tetramethylammonium hydroxide (TMAH) or salt thereof, glycol ether and water at a high temperature in a stirrer under a pressurized condition equipped with a reflux device step; and b) adding a water-soluble amine to the stirred solution cooled to room temperature after stirring in step a). The present invention also relates to a method for preparing an organic insulating film peeling solution and a method for peeling the organic insulating film.
본 발명에 의하여 제조된 유기절연막 박리액은 유기절연막의 하부에 위치하고 있는 금속 배선 및 칼라레지스트는 손상시키지 않으면서 유기절연막, 특히 티에프티 엘시디(TFT-LCD)용 네가티브형 유기절연막 만을 짧은 시간 내에 용이하게 제거할 수 있다.The organic insulation film peeling solution prepared in accordance with the present invention can be used only for a short period of time in an organic insulating film, particularly a negative type organic insulating film for a TFT-LCD, without damaging the metal wiring and the color resist underlying the organic insulating film. .
유기절연막, 박리액, 4급 암모늄 염, 글리콜 에테르, 수용성 아민 Organic insulating film, peeling solution, quaternary ammonium salt, glycol ether, water-soluble amine
Description
본 발명은 유기절연막, 특히 티에프티 엘시디(TFT-LCD)용 네가티브형 유기절연막을 짧은 시간 내에 용이하게 제거함으로써 유기절연막 제조공정 중에 발생되는 불량 기판을 재사용할 수 있게 하는 박리액 조성물의 제조방법 및 박리액에 관한 것이다.The present invention relates to a method of manufacturing a peeling liquid composition which can easily reuse a defective substrate generated during an organic insulating film manufacturing process by easily removing an organic insulating film, particularly a negative organic insulating film for TFT-LCD, To a peeling liquid.
현재 사용되는 유기절연막은 무기절연막의 대용으로서 그 하부에는 금속 배선 및 칼라레지스트가 일반적으로 존재한다.The organic insulating film currently used is a substitute for an inorganic insulating film, and metal wirings and color resists generally exist under the organic insulating film.
유기절연막의 제조공정 중에 발생되는 불량 기판을 재사용하기 위해서는 유기절연막의 하부에 위치하고 있는 금속 배선 및 칼라레지스트는 손상시키지 않으면서 유기절연막 만을 제거할 수 있는 박리액이 필요하다. 나아가, 빠른 시간 내에 제거하여야만 공정시간을 단축할 수 있어 유기절연막을 일반 포토레지스트와 비슷하게 단시간에 박리할 수 있는 박리액이 필요한 상황이다.In order to reuse the defective substrate generated during the manufacturing process of the organic insulating film, a stripping solution capable of removing only the organic insulating film without damaging the metal wiring and the color resist underlying the organic insulating film is required. Furthermore, since the process time can be shortened if it is removed within a short period of time, it is necessary to remove the organic insulating film in a short time similar to a general photoresist.
포지티브형 유기절연막에 비해 박리되기 어려운 네가티브형 유기절연막을 제거하기 위한 박리액으로서 높은 pH를 갖는 유기계 또는 무기계 박리액이 고안된바 있으며, 예를 들어 이러한 유기계 박리액이 한국 공개특허공보 제2005-0006980호, 일본 공개특허공보 소51-72503호 및 유럽 특허 제0119337호에 개시되어 있다.An organic or inorganic peeling solution having a high pH has been devised as a peeling solution for removing a negative type organic insulating film which is difficult to peel off compared with a positive type organic insulating film. For example, such an organic peeling solution is disclosed in Korean Patent Laid- Japanese Patent Laid-Open Publication No. 51-72503, and European Patent No. 0119337.
그러나, 높은 pH를 갖는 이러한 유기계 박리액을 사용할 경우 높은 pH로 인해 단시간 사용에도 하부의 금속 배선 및 칼라레지스트에 심각한 손상을 초래할 수 있으며, pH를 낮추기 위해 약한 알칼리 화합물을 적용할 경우 금속 배선 및 칼라레지스트에 손상을 주지는 않지만 유기절연막의 제거능이 불충분해진다는 문제점이 있다. 또한 한국 공개특허공보 제2009-0032640호에도 박리조성물이 개시되어 있으나 구리배선의 손상을 전혀 방지할 수 없었다.However, when such an organic peeling solution having a high pH is used, it may cause serious damage to the metal wiring and the color resist underneath even in a short time due to its high pH. In case of applying a weak alkali compound to lower the pH, There is a problem that the resist is not damaged, but the ability to remove the organic insulating film becomes insufficient. In addition, Korean Patent Laid-Open Publication No. 2009-0032640 discloses a release composition, but can not prevent the copper wiring from being damaged at all.
이와 같이, 이제까지 알려진 종래의 유기절연막 박리액으로는 안정적으로 대량의 유기절연막을 제거하는 것이 곤란하거나, 하부막질의 손상이 심하여 기판의 재사용이 불가능하거나, 유기절연막의 제거에 오랜 시간이 소요되어 생산성 또는 수율이 떨어진다는 문제점이 있다.As described above, it is difficult to stably remove a large amount of the organic insulating film from the conventional organic insulating film peeling solution, or the substrate can not be reused due to the damage of the bottom film, or it takes a long time to remove the organic insulating film, Or the yield is low.
따라서, 유기절연막을 선택적으로 안전하게 대량으로 제거할 수 있는 박리액 조성물이 요구되고 있는 실정이다.Therefore, there is a demand for a peeling liquid composition which can selectively and safely remove an organic insulating film in a large amount.
따라서, 본 발명은 유기절연막의 하부에 위치하고 있는 금속 배선 및 칼라레지스트는 손상시키지 않으면서 유기절연막(특히 티에프티 엘시디(TFT-LCD)용 네가티브형 유기절연막) 만을 짧은 시간 내에 용이하게 제거함으로써 유기절연막 제조공정 중에 발생되는 불량 기판의 재사용을 가능하게 하는 유기절연막 박리액의 제조방법 및 박리액을 제공하는 것을 목적으로 한다.Accordingly, the present invention can easily remove only the organic insulating film (particularly the negative type organic insulating film for TFT-LCD) in a short time without damaging the metal wiring and the color resist located under the organic insulating film, And an object of the present invention is to provide a method for manufacturing an organic insulating film peeling solution and a peeling solution which enable reuse of a defective substrate generated during a manufacturing process.
상기 목적을 달성하기 위하여, 본 발명은 In order to achieve the above object,
a) 환류장치가 구비된 가압조건의 교반기 내에서 테트라메틸 암모늄 하이드록사이드(TMAH) 염 3 내지 15 중량부, 글리콜 에테르 10 내지 60 중량부, 물 9 내지 45 중량부를 90-120 ℃의 온도에서 2-72시간 교반하는 단계; a) from 3 to 15 parts by weight of tetramethylammonium hydroxide (TMAH) salt, from 10 to 60 parts by weight of glycol ether and from 9 to 45 parts by weight of water in an agitator under a pressurized condition equipped with a refluxing apparatus at a temperature of 90 to 120 DEG C Stirring for 2 to 72 hours;
b) 상기 a)단계의 교반 후 실온으로 냉각된 교반물에 수용성 아민 20 내지 40 중량부를 첨가하는 단계;b) adding 20 to 40 parts by weight of water-soluble amine to the stirred mixture cooled to room temperature after stirring in step a);
를 포함하는 것을 특징으로 하는 유기절연막 박리액의 제조방법을 제공한다.The organic insulating film removing solution comprising the organic insulating film and the organic insulating film.
또한 본 발명은 상기 유기절연막 박리액의 제조방법에 의하여 제조된 유기절연막 박리액을 제공한다.The present invention also provides an organic insulating film peeling solution produced by the method for producing an organic insulating film peeling solution.
또한 본 발명은 상기 유기절연막 박리액에 유기절연막을 함유하는 기판을 침지시켜 기판으로부터 유기절연막을 박리시키는 방법을 제공한다.The present invention also provides a method for peeling an organic insulating film from a substrate by immersing the substrate containing the organic insulating film in the organic insulating film peeling solution.
본 발명의 유기절연막 박리액 조성물은, INDUSTRIAL APPLICABILITY The organic insulating film peeling liquid composition of the present invention,
① 유기절연막 만을 선택적으로 짧은 시간 내에 용이하게 제거할 수 있고,(1) Only the organic insulating film can be selectively removed within a short time,
② 후속의 린스 공정에서 이소프로필알콜, 디메틸설폭사이드와 같은 유기용제를 사용할 필요 없이 물로 용이하게 린스할 수 있고,(2) It is not necessary to use an organic solvent such as isopropyl alcohol or dimethyl sulfoxide in the subsequent rinsing step,
③ 특히 하부 금속 배선이나 칼라레지스트에 영향을 주지 않으므로 티에프티-엘시디(TFT-LCD) 제조공정 중 어떠한 공정에서나 전(前)공정의 기판을 재사용할 수 있게 한다.(3) Since it does not affect the bottom metal wiring or the color resist, the substrate of the previous process can be reused in any process of the TFT-LCD manufacturing process.
본 발명의 유기절연막 박리액의 제조방법은 a) 환류장치가 구비된 가압조건의 교반기 내에서 테트라메틸 암모늄 하이드록사이드(TMAH) 또는 이의 염 3 내지 15 중량부, 글리콜 에테르 10 내지 60 중량부, 물 9 내지 45 중량부를 90-120 ℃의 온도에서 2-72시간 교반하는 단계; b) 상기 a)단계의 교반 후 실온으로 냉각된 교반물에 수용성 아민 20 내지 40 중량부를 첨가하는 단계;를 포함하는 것을 특징으로 한다.(A) 3 to 15 parts by weight of tetramethylammonium hydroxide (TMAH) or a salt thereof, 10 to 60 parts by weight of glycol ether, and 10 to 60 parts by weight of tetramethylammonium hydroxide (TMAH) in a stirrer under a pressurized condition equipped with a reflux device, Stirring 9 to 45 parts by weight of water at a temperature of 90 to 120 DEG C for 2 to 72 hours; b) adding 20 to 40 parts by weight of a water-soluble amine to the stirred mixture cooled to room temperature after stirring in the step a).
이하 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명에서 유기절연막 박리액에 사용되는 성분은 테트라메틸 암모늄 하이드록사이드(TMAH) 또는 이의 염, 글리콜 에테르, 수용성 아민 및 물을 각각 3 내지 15 중량부, 10 내지 60 중량부, 20 내지 40 중량부 및 9 내지 45 중량부의 양으로 포함하는 것을 특징으로 하며, 각각의 성분을 바람직하게는 3 내지 10 중량부, 30 내지 60 중량부, 20 내지 40 중량부 및 9 내지 30 중량부, 더욱 바람직하게는 3 내지 6 중량부, 40 내지 60 중량부, 25 내지 35 중량부 및 9 내지 18 중량부의 양으로 포함할 수 있다.In the present invention, the component used for the organic insulation film peeling solution is a mixture of 3 to 15 parts by weight, 10 to 60 parts by weight, and 20 to 40 parts by weight of tetramethylammonium hydroxide (TMAH) or a salt thereof, glycol ether, And 9 to 45 parts by weight, and each component is preferably contained in an amount of 3 to 10 parts by weight, 30 to 60 parts by weight, 20 to 40 parts by weight and 9 to 30 parts by weight, May be contained in an amount of 3 to 6 parts by weight, 40 to 60 parts by weight, 25 to 35 parts by weight and 9 to 18 parts by weight.
본 발명에 사용되는 글리콜 에테르의 대표적인 예로는 디에틸렌글리콜 모노메틸에테르, 에틸렌글리콜 모노에틸에테르, 에틸렌글리콜 모노부틸에테르, 프로필렌글리콜 모노메틸에테르, 프로필렌글리콜 모노에틸에테르, 프로필렌글리콜 모노부틸에테르, 디에틸렌글리콜 모노에틸에테르, 디에틸렌글리콜 모노프로필에테르, 디에틸렌글리콜 모노부틸에테르, 디프로필렌글리콜 모노메틸에테르, 디프로필렌글리콜 모노에틸에테르, 디프로필렌글리콜 모노프로필에테르, 디프로필렌글리콜 모노부틸에테르, 트리에틸렌글리콜 모노메틸에테르, 트리에틸렌글리콜 모노에틸에테르, 트리에틸렌글리콜 모노프로필에테르, 트리에틸렌글리콜 모노부틸에테르, 트리프로필렌글리콜 모노메틸에테르, 트리프로필렌글리콜 모노에틸에테르, 트리프로필렌글리콜 모노프로필에테르, 트리프로필렌글리콜 모노부틸에테르 및 이들의 혼합물을 들 수 있다.Representative examples of the glycol ether used in the present invention include diethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monobutyl ether, diethylene Glycol monoethyl ether, diethylene glycol monopropyl ether, diethylene glycol monobutyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, dipropylene glycol monopropyl ether, dipropylene glycol monobutyl ether, triethylene glycol Monomethyl ether, triethylene glycol monoethyl ether, triethylene glycol monopropyl ether, triethylene glycol monobutyl ether, tripropylene glycol monomethyl ether, tripropylene glycol monoethyl ether, tripropylene glycol moiety Propyl ether, triethylene may be a mixture of propylene glycol monobutyl ether and mixtures thereof.
본 발명에 사용되는 수용성 아민의 대표적인 예로는 에탄올아민, 디에탄올아민, 트리에탄올아민, N-메틸에탄올아민, N,N-디메틸에탄올아민, N-에틸에탄올아민, N,N-디에틸에탄올아민, 프로판올아민, N,N-디메틸프로판올아민, N-에틸프로판올아민, N,N-디에틸프로판올아민 및 이들의 혼합물을 들 수 있다.Representative examples of the water-soluble amine used in the present invention include ethanolamine, diethanolamine, triethanolamine, N-methylethanolamine, N, N-dimethylethanolamine, N-ethylethanolamine, Propanolamine, N, N-dimethylpropanolamine, N-ethylpropanolamine, N, N-diethylpropanolamine and mixtures thereof.
또한, 본 발명에 따른 유기절연막 박리액 조성물은 상술한 필수성분 이외에도 통상적으로 유기절연막의 박리에 유용한 첨가제들을 필요에 따라 추가로 포함할 수 있다.In addition to the essential components described above, the organic insulating film peeling liquid composition according to the present invention may further include additives, which are usually useful for peeling off the organic insulating film, if necessary.
본 발명에서 유기절연막 박리액의 제조방법은 환류장치가 구비된 가압조건의 교반기 내에서 상기 테트라메틸 암모늄 하이드록사이드(TMAH) 염, 글리콜 에테르 및 물을 90-120 ℃의 온도에서 2-72시간 교반하는 단계하는 단계를 포함한다. 상기 테트라메틸 암모늄 하이드록사이드(TMAH) 또는 이의 염 및 물은 혼합시 수용액의 형태로도 혼합될 수 있다.In the present invention, the method for producing an organic insulating film peeling solution is characterized in that the tetramethylammonium hydroxide (TMAH) salt, glycol ether and water are heated at a temperature of 90-120 ° C for 2-72 hours Followed by agitation. The tetramethylammonium hydroxide (TMAH) or a salt thereof and water may be mixed in the form of an aqueous solution upon mixing.
바람직하게는 상기 교반시 교반기 내는 1.5-5 기압을 유지하는 것이 좋으며, 상기 교반온도는 105-115 ℃, 교반시간은 6-36 시간 동안 이루어지는 것이 좋다.Preferably, the stirrer is maintained at a pressure of 1.5-5 atm, and the stirring temperature is 105-115 ° C and the stirring time is 6-36 hours.
또한 본 발명은 상기 교반을 종료한 후 교반물을 실온으로 냉각 후 교반물에 수용성 아민을 첨가 혼합하는 단계를 통하여 유기절연막 박리액이 제조된다. 필요한 경우 상기 수용성 아민의 첨가시 또는 첨가 후에 박리액에 통상적으로 포함되는 첨가제들을 더욱 첨가하여 유기절연막 박리액을 제조할 수 있다.In the present invention, after the completion of the stirring, the stirring water is cooled to room temperature, and the water-soluble amine is added to the stirred material to prepare an organic insulating film peeling liquid. If necessary, the organic insulating film peeling solution can be prepared by further adding additives normally contained in the peeling solution upon or after the addition of the water-soluble amine.
상기 본 발명에 따른 유기절연막 박리액의 제조방법에 따라 제조된 유리절연막 박리액에 유기절연막을 함유하는 기판을 침지시킴으로써 기판으로부터 유기절연막을 박리시킬 수 있다.The organic insulating film can be peeled off from the substrate by immersing the substrate containing the organic insulating film in the glass insulating film peeling solution produced according to the method of manufacturing the organic insulating film peeling solution according to the present invention.
상술한 바와 같이, 본 발명의 유기절연막 박리액 조성물은 기판으로부터 유기절연막(특히 티에프티 엘시디(TFT-LCD)용 네가티브형 유기절연막) 만을 선택적으로 박리시킬 수 있으며, 다음과 같은 장점을 갖는다:As described above, the organic insulating film peeling liquid composition of the present invention can selectively remove an organic insulating film (particularly, a negative type organic insulating film for TFT-LCD) from a substrate, and has the following advantages:
① 유기절연막 만을 선택적으로 짧은 시간 내에 용이하게 제거할 수 있고,(1) Only the organic insulating film can be selectively removed within a short time,
② 후속의 린스 공정에서 이소프로필알콜, 디메틸설폭사이드와 같은 유기용제를 사용할 필요 없이 물로 용이하게 린스할 수 있고,(2) It is not necessary to use an organic solvent such as isopropyl alcohol or dimethyl sulfoxide in the subsequent rinsing step,
③ 특히 하부 금속 배선이나 칼라레지스트에 영향을 주지 않으므로 티에프티-엘시디(TFT-LCD) 제조공정 중 어떠한 공정에서나 전(前)공정의 기판을 재사용할 수 있게 한다.(3) Since it does not affect the bottom metal wiring or the color resist, the substrate of the previous process can be reused in any process of the TFT-LCD manufacturing process.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 하기 실시예는 본 발명을 예시하는 것일 뿐 본 발명의 범위가 하기 실시예에 한정되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to the following examples. However, the scope of the present invention is not limited to the following examples.
[실시예][Example]
실시예 1 내지 4, 및 비교예 1 및 2Examples 1 to 4 and Comparative Examples 1 and 2
환류장치가 구비된 교반기에 하기 표 1 기재의 성분 중 TMAH, MDG 및 물을 넣고, 교반기 내 압력을 1.5-5 기압으로 유지시키면서 110 ℃에서 24시간 교반하였다. 이후 교반물을 실온으로 냉각 후 MEA를 혼합하여 유기절연막 박리액 조성물을 제조하였다. 하기 표 1의 단위는 중량부이다.TMAH, MDG and water in the components shown in the following Table 1 were placed in a stirrer equipped with a reflux apparatus and stirred at 110 ° C for 24 hours while maintaining the pressure in the stirrer at 1.5-5 atm. Thereafter, the agitated material was cooled to room temperature, and MEA was mixed to prepare an organic insulating film peeling liquid composition. The units in Table 1 are parts by weight.
[표 1][Table 1]
* TMAH: 테트라메틸 암모늄 하이드록사이드 TMAH: tetramethylammonium hydroxide
* MDG: 디에틸렌글리콜 모노메틸에테르* MDG: diethylene glycol monomethyl ether
* MEA: 에탄올아민* MEA: Ethanolamine
시험예 : 유기절연막 박리 시험Test example: organic insulating film peeling test
상기 실시예 1 내지 4, 및 비교예 1 및 2에서 제조한 조성물의 유기절연막 박리 성능을 평가하기 위해, 먼저 하기 공정에 따라 유기절연막 시편을 제조하였다.In order to evaluate the organic insulating film peeling performance of the compositions prepared in Examples 1 to 4 and Comparative Examples 1 and 2, organic insulating film specimens were first prepared according to the following steps.
<유기절연막 시편 제조>≪ Preparation of organic insulating film sample &
유기절연막이 도포된 시편을 만들기 위해, 하부에 Mo/Al/Mo 다중막이 증착되어 있고 패턴이 형성된 유리 기판 위에 유기절연막 조성물(동진쎄미켐 사제, 상품 명 SOJN-091)을 스핀코팅하여 최종 막 두께가 4.0 ㎛가 되도록 도포하였다. 이어서, 핫 플레이트에서 상기 유기절연막에 대해 90 ℃에서 120 초간 소프트 베이크(soft-bake)를 실시하였다. 이어, 얻어진 유기절연막을 노광하고 2.38% TMAH 현상액으로 상온에서 70초 동안 현상한 후 전면 노광을 거친 다음 130℃ 에서 3분간 하드 베이크(hard-bake)하여 네가티브형 유기절연막 시편을 제조하였다.An organic insulating film composition (product name: SOJN-091, manufactured by Dongjin Semichem Co., Ltd.) was spin-coated on a patterned glass substrate having a Mo / Al / Mo multilayer deposited thereon to form a sample having an organic insulating film applied thereto. 4.0 占 퐉. Then, the organic insulating film was subjected to soft-bake at 90 DEG C for 120 seconds on a hot plate. Subsequently, the obtained organic insulating film was exposed, developed with 2.38% TMAH developer at room temperature for 70 seconds, and then subjected to a front exposure, followed by hard-bake at 130 ° C for 3 minutes to prepare a negative type organic insulating film specimen.
<유기절연막 제거 시험>≪ Organic insulating film removal test &
유기절연막 시편을 70 ℃에서 상기 실시예 1 내지 4, 및 비교예 1 및 2에서 제조한 각각의 조성물에 침지하여 기판에서 유기절연막이 완전히 박리되는 시간을 측정하였다. 이때, 상기 시편을 조성물로부터 꺼내어 초순수로 수세하고 질소 가스로 건조한 후 패턴 내에 유기절연막이 잔류하는지 여부를 현미경으로 확대 검사하여 유기절연막이 기판 내 잔류하는지 여부를 관찰하였다.The organic insulating film specimen was immersed in each of the compositions prepared in Examples 1 to 4 and Comparative Examples 1 and 2 at 70 캜 to measure the time for completely peeling the organic insulating film from the substrate. At this time, the specimen was taken out from the composition, rinsed with ultrapure water, dried with nitrogen gas, and whether or not the organic insulating film remained in the pattern was examined under a microscope to observe whether the organic insulating film remained in the substrate.
또한, 하부막질의 손상 여부를 관찰하기 위해, 유기절연막 시편을 상기 실시예 1 내지 4, 및 비교예 1 및 2에서 제조한 각각의 조성물에 10분간 침지한 후 꺼내어 주사전자현미경(SEM)으로 금속 배선의 부식 정도를 관찰하였다.In order to observe whether or not the underlying film was damaged, the organic insulating film specimen was immersed in each of the compositions prepared in Examples 1 to 4 and Comparative Examples 1 and 2 for 10 minutes, taken out and scanned with a scanning electron microscope (SEM) The degree of corrosion of the wiring was observed.
얻어진 결과를 하기 표 2에 나타내었다.The obtained results are shown in Table 2 below.
[표 2][Table 2]
<X: 배선 제거, △: Al 의 심각한 손상, ○: 표면 Pitting 발생, ◎: 손상 없음>≪ X: Wiring removal,?: Serious damage of Al,?: Occurrence of surface pitting,?: No damage>
상기 표 2로부터, 실시예 1 내지 4에서 제조된 본 발명의 유기절연막 박리액 조성물은, 비교예 1 및 2에서 제조된 조성물에 비해, 신속하게 네가티브형 유기절연막을 박리하면서도 하부막질(금속 배선)을 손상시키지 않음을 알 수 있다.It can be seen from Table 2 that the organic insulating film peeling liquid composition of the present invention prepared in Examples 1 to 4 has a lower film quality (metal wiring) than the composition prepared in Comparative Examples 1 and 2, It does not deteriorate.
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