KR101698931B1 - Magnetic track amd information storage device including the same - Google Patents

Magnetic track amd information storage device including the same Download PDF

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KR101698931B1
KR101698931B1 KR1020100011195A KR20100011195A KR101698931B1 KR 101698931 B1 KR101698931 B1 KR 101698931B1 KR 1020100011195 A KR1020100011195 A KR 1020100011195A KR 20100011195 A KR20100011195 A KR 20100011195A KR 101698931 B1 KR101698931 B1 KR 101698931B1
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KR
South Korea
Prior art keywords
magnetic
magnetic layer
track
domain wall
layer
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KR1020100011195A
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Korean (ko)
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KR20110091384A (en
Inventor
이성철
서순애
조영진
피웅환
배지영
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삼성전자 주식회사
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods

Abstract

Magnetic track and an information storage device including the same. The disclosed information storage device may include a track having a synthetic antiferromagnet (SAF) structure. A magnetic domain wall movement means for moving the magnetic domain wall of the track, and a read / write means for reproducing and recording information on the track.

Description

Technical Field [0001] The present invention relates to a magnetic track and an information storage device including the magnetic track.

A magnetic track and an information storage device including the magnetic track.

A nonvolatile information storage device in which recorded information is maintained even when the power is turned off includes a hard disk drive (HDD) and a random access memory (RAM).

In general, HDDs tend to wear out with storage devices having rotating parts, and reliability is low because of the high possibility of failures in operation. On the other hand, a representative example of the nonvolatile RAM is a flash memory. The flash memory does not use a rotating mechanism, but has a drawback in that the read / write operation speed is slow, the life is short, and the storage capacity is small compared with the HDD. In addition, the production cost of flash memory is relatively high.

Recently, research and development of a new information storage device using a magnetic domain wall movement principle of a magnetic material have been conducted as a means for overcoming the problems of a conventional nonvolatile information storage device. A magnetic domain is a magnetic microstructure in which a magnetic moment is arranged in a certain direction in a ferromagnetic body, and a magnetic domain wall is a boundary of magnetic domains having different magnetization directions. The magnetic domain wall and the magnetic domain wall can be moved by a current applied to the magnetic body. It is expected that, by using the principle of moving the magnetic domain wall and the magnetic domain wall, an information storage device having a large storage capacity can be realized without using a rotating mechanism.

However, for practical use of the device using the magnetic domain wall movement, it is necessary to lower the threshold current for moving the magnetic domain wall and the magnetic domain wall. When the threshold current is high, power consumption is large, and various problems may occur such that the magnetic body is heated by joule heat.

A magnetic track capable of moving a magnetic domain wall and an information storage device including the same are provided.

According to one aspect of the present invention, there is provided a track comprising a synthetic antiferromagnet (SAF) structure having a plurality of magnetic domain regions arranged in the extending direction and a magnetic domain wall region therebetween; A magnetic domain wall moving means for moving a magnetic domain wall of the track; And a read / write unit for reproducing and recording information on the track.

The track includes a first magnetic layer; And a second magnetic layer formed on either the upper surface or the lower surface of the first magnetic layer to form the SAF structure with the first magnetic layer.

The thickness of the second magnetic layer may be thinner than the thickness of the first magnetic layer.

The thickness of the first magnetic layer may be about 0.3 to 10 nm.

The thickness of the second magnetic layer may be about 0.1 to 1 nm.

The exchange coupling constant Jex between the first magnetic layer and the second magnetic layer may satisfy -1? Jex <0 (unit: erg / cm).

The first and second magnetic layers may have perpendicular magnetic anisotropy.

And a third magnetic layer for forming the SAF structure with the first magnetic layer may be further provided on the other of the upper surface and the lower surface of the first magnetic layer.

The exchange coupling constant (Jex) between the first magnetic layer and the third magnetic layer may satisfy -1? Jex <0 (unit: erg / cm).

The first to third magnetic layers may have perpendicular magnetic anisotropy.

According to another aspect of the present invention, there is provided a magnetic head comprising: a track having a plurality of magnetic domain regions arranged in the extending direction and a magnetic domain wall region therebetween; A magnetic domain wall moving means for moving a magnetic domain wall of the track; And read / write means for reproducing and recording information on the track,

The track includes a first magnetic layer; And a second magnetic layer for lowering a saturation magnetization (Ms) of the track on at least one of an upper surface and a lower surface of the first magnetic layer.

The thickness of the second magnetic layer may be thinner than the thickness of the first magnetic layer.

The track may further include a spacer layer between the first magnetic layer and the second magnetic layer.

A magnetic track having a low threshold current for moving the magnetic domain wall and a magnetic domain wall moving device (information storage device) including the magnetic track can be realized. Accordingly, the power consumption of the magnetic domain wall moving device (information storage device) can be reduced, and the problem of joule heating can be suppressed / prevented.

1 is a perspective view illustrating a track according to an embodiment of the present invention.
2 is a perspective view showing a track according to a comparative example.
3 is a graph showing the variation of critical current density according to the exchange coupling constant (Jex) of a track manufactured according to the above embodiment and the critical current density for the magnetic domain wall movement of the track according to the embodiment of the present invention and the comparative example to be.
4 and 5 are perspective views showing tracks according to another embodiment of the present invention.
6 is a perspective view illustrating an information storage device including tracks according to an embodiment of the present invention.
Description of the Related Art [0002]
10: first magnetic layer 20: second magnetic layer
30: third magnetic layer 100, 200, 300, 1000: tracks
2000: Reading means 3000: Writing means
D1 to D3: magnetic domain regions DW1 and DW2: magnetic domain wall regions
T1, T2: transistor

Hereinafter, a magnetic track and an information storage device including the same according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The widths and thicknesses of the layers or regions illustrated in the accompanying drawings are exaggerated for clarity of description. And in the accompanying drawings, like reference numerals refer to like elements.

First, a brief description will be given of an idea and principle according to one aspect of the present invention. A track according to an embodiment of the present invention may include a synthetic antiferromagnet (SAF) structure. Therefore, the threshold current for moving the magnetic domain wall in the track can be lowered. More specifically, the threshold current for moving the magnetic domain wall in the track may increase as the saturation magnetization (Ms) of the track increases. The saturation magnetization amount (Ms) is a unique value of the material, and according to the related art, it is not easy to adjust the saturation magnetization amount (Ms) of the track. However, when the track is formed into the SAF structure as in the embodiment of the present invention, the effective saturation magnetization amount Ms of the entire track can be easily lowered. This is because the magnetization amounts are canceled because the magnetic layers constituting the SAF structure have mutually opposite magnetization directions. Therefore, the track according to the embodiment of the present invention can have a low saturation magnetization amount (Ms), and consequently, the threshold current for moving the magnetic domain wall in the track can be lowered.

Figure 1 shows a track 100 according to an embodiment of the invention.

Referring to FIG. 1, a track 100 may include a first magnetic layer 10 and a second magnetic layer 20 provided on a top surface of the first magnetic layer 10. The second magnetic layer 20 may form a synthetic antiferromagnet (SAF) structure with the first magnetic layer 10. Although not shown, a spacer may be further provided between the first magnetic layer 10 and the second magnetic layer 20. When the two magnetic layers (i.e., the first and second magnetic layers 10 and 20) are in contact with each other with a predetermined spacer interposed therebetween, the SAF structure can be formed. In the SAF structure, if the magnetization direction of one of the two magnetic layers (the first and second magnetic layers 10 and 20) is set to the first direction, the other magnetization direction can be set to the opposite direction to the first direction . Because it is energetically stable. Therefore, the fact that the two magnetic layers (the first and second magnetic layers 10 and 20) form the SAF structure can mean that their magnetization directions are opposite to each other.

The first and second magnetic layers 10 and 20 may have perpendicular magnetic anisotropy. In this case, the first and second magnetic layers 10 and 20 may include a Co-based material, and may have a single layer or a multilayer structure. An example concrete, the first and second magnetic layers (10, 20) includes at least one of Co, CoFe, CoFeB, CoCr and CoCrPt, or, [Co / Ni] n structure, [Co / Pt] n structure or a [Co / Pd] n structure, and the like. In the [Co / Ni] n structure, n means the number of times that Co and Ni are alternately repeatedly stacked. This is true for [Co / Pt] n and [Co / Pd] n . Meanwhile, the spacer (not shown) provided between the first and second magnetic layers 10 and 20 may be a nonmagnetic layer. For example, the spacer may be a non-magnetic conductive layer such as a Ru layer. Here, although specific reference has been made to the material of the first and second magnetic layers 10 and 20 and the spacer, this is merely an illustrative example, and various other materials can be used.

The track 100 may have a plurality of magnetic domain regions D1 to D3 arranged in a line along the extending direction thereof and a magnetic domain wall regions DW1 and DW2 therebetween. Although three magnetic domain regions D1 to D3 and two magnetic domain wall regions DW1 and DW2 are shown here, the number of them can be increased. The fact that the first and second magnetic layers 10 and 20 constitute the SAF structure means that a predetermined region of the first magnetic layer 10 and a region of the corresponding second magnetic layer 20 have mutually opposite magnetization directions do. Therefore, in each of the magnetic domain regions D1 to D3, the magnetization direction of the first magnetic layer 10 and the magnetization direction of the second magnetic layer 20 may be opposite to each other. The arrows shown in the respective magnetic domain regions D1 to D3 represent the magnetization directions of the corresponding domains. The magnetic domains of the magnetic domain regions D1 to D3 and the magnetic domain walls of the magnetic domain wall regions DW1 and DW2 can be moved by the currents applied to the tracks 100. [ The moving direction of the magnetic domain wall and the magnetic domain wall can be determined according to the direction of the current. The magnetic domains and the magnetic domain walls can be moved in a direction in which electrons flow. Since the direction of the current and the direction of the electrons are regarded as reversed, the magnetic domain wall and the magnetic domain wall move in the opposite direction of the current.

The thicknesses of the first magnetic layer 10 and the second magnetic layer 20 may be different. For example, the thickness of the first magnetic layer 10 may be greater than the thickness of the second magnetic layer 20. In this case, the first magnetic layer 10 may have a thickness of, for example, about 0.3 to 10 nm, and the second magnetic layer 20 may have a thickness of, for example, about 0.1 to 1 nm. When the thickness of the first magnetic layer 10 is thick, it is easy to invert the magnetization of the first magnetic layer 10 by a predetermined writing means (not shown). When the magnetization direction is reversed in a predetermined region of the first magnetic layer 10, the magnetization direction of the corresponding region of the second magnetic layer 20 can also be reversed. For example, when the magnetization direction of the first magnetic layer 10 is reversed in the first magnetic domain D1 of the plurality of magnetic domains D1 to D3, the magnetization direction of the corresponding second magnetic layer 20 is also reversed . At this time, if the thickness of the first magnetic layer 10 is relatively large, the magnetization inversion of the first magnetic layer 10 can be facilitated, and as a result, the magnetization inversion of the first magnetic domain D1 can be facilitated. The inversion of the magnetization direction of the first magnetic domain D1 may be regarded as an operation of recording predetermined data. Therefore, if the thickness of the first magnetic layer 10 is relatively large, an effect of facilitating the data recording operation can be obtained. The second magnetic layer 20 may be formed thicker than the first magnetic layer 10. In this case, it may be appropriate to perform the first recording operation on the second magnetic layer 20. That is, when the second magnetic layer 20 is relatively thick, it may be easier to reverse the magnetization of the second magnetic layer 20 first so that the magnetization of the first magnetic layer 10 is reversed. In the above description, the first magnetic layer 10 and the second magnetic layer 20 have different thicknesses. However, the thicknesses of the first and second magnetic layers 10 and 20 are not necessarily different. In some cases, the first and second magnetic layers 10 and 20 may be formed to have the same thickness.

Meanwhile, the exchange coupling constant Jex between the first and second magnetic layers 10 and 20 may be less than zero. For example, the exchange coupling constant Jex may be greater than or equal to about -1 erg / cm, and may be less than zero. As the exchange coupling constant Jex is negative and lower, the first magnetic layer 10 and the second magnetic layer 20 tend to be magnetized in the opposite eaves.

Since the track 100 according to the embodiment of the present invention includes the SAF structure, the effective saturation magnetization amount Ms can be lowered, and consequently, the threshold current for moving the magnetic domain wall in the track 100 can be lowered have. As described above in detail, the repetitive description will be omitted.

2 shows a track according to a comparative example compared with the embodiment of the present invention.

Referring to Fig. 2, a track of a single layer structure is shown. The track of FIG. 2 may have a single-layer structure composed of only the first magnetic layer 10, in which the second magnetic layer 20 is removed in FIG. When a track is formed in a single layer structure as described above, the saturation magnetization Ms of the track is larger than that of the structure shown in Fig. 1, and thus there is a problem that it is difficult to lower the threshold current for the magnetic domain wall movement.

FIG. 3 shows the critical current density for the magnetic domain wall movement of the track according to the embodiment of the present invention and the comparative example. FIG. 3 also shows the variation of the critical current density for the magnetic domain wall movement according to the exchange coupling constant Jex of the track according to the embodiment of the present invention.

The track according to the embodiment of the present invention used to obtain the results of FIG. 3, having the structure as shown in FIG. 1, was manufactured with a length of 1000 nm and a width of 200 nm. At this time, the thickness of the first magnetic layer 10 was 1.0 nm, and the thickness of the second magnetic layer 20 was 0.1 nm. On the other hand, the track according to the comparative example has a single layer structure as shown in Fig. That is, the track according to the comparative example is a structure in which the second magnetic layer 20 is not present in the track according to the embodiment (i.e., a single layer structure composed of only the first magnetic layer 10). The track length, width and thickness according to the comparative example were 1000 nm, 200 nm and 1.0 nm, respectively.

Referring to FIG. 3, it can be seen that the track graph according to the embodiment of the present invention is located on the left side of the graph of the track according to the comparative example. This means that the track according to the embodiment of the present invention has a lower threshold current for the magnetic domain wall movement than the track according to the comparative example. It can also be seen from FIG. 3 that the threshold current for the magnetic domain wall movement decreases as the exchange coupling constant (Jex) is lower in the track according to the embodiment of the present invention.

The structure of Fig. 1 can be modified in various ways. Hereinafter, a modified example of Fig. 1 will be described with reference to Figs. 4 and 5. Fig.

4 shows a track 200 according to another embodiment of the present invention. FIG. 4 shows the position of the first magnetic layer 10 and the second magnetic layer 20 in FIG. 1 changed. That is, the second magnetic layer 20 is located on the lower surface of the first magnetic layer 10. In this case, the lower layer (i.e., the second magnetic layer 20) may be thinner than the upper layer (i.e., the first magnetic layer 10).

Figure 5 shows a track 300 according to another embodiment of the present invention. 5 is a modified structure in which the third magnetic layer 30 is added to the bottom surface of the first magnetic layer 10 in Fig. The third magnetic layer 30 can form a SAF structure with the first magnetic layer 10. [ Therefore, it can be said that FIG. 5 has SAF structure above and below the first magnetic layer 10. Although not shown, a spacer may be provided between the first magnetic layer 10 and the second magnetic layer 20, and between the first magnetic layer 10 and the third magnetic layer 30. The spacer may be the same as the spacer described with reference to Fig.

The first to third magnetic layers 10, 20, and 30 may have perpendicular magnetic anisotropy. Since the materials of the first and second magnetic layers 10 and 20 have been described with reference to Fig. 1, they are not repeated here. The material of the third magnetic layer 30 may be the same as or similar to the material of the first and second magnetic layers 10 and 20. The second and third magnetic layers 20 and 30 may be formed to be relatively thinner than the first magnetic layer 10. However, this is merely an example and can be variously modified. For example, the first to third magnetic layers 10, 20, 30 may be formed to have the same thickness, or the second and third magnetic layers 20, 30 may be formed thicker than the first magnetic layer 10. The first magnetic layer 10 and the third magnetic layer 30 may be formed to have a similar thickness and the second magnetic layer 10 may be formed to be relatively thin or the first magnetic layer 10 and the second magnetic layer 20 may be formed to be similar And the third magnetic layer 30 may be formed to have a relatively small thickness. In addition, various deformation structures may be possible.

The track according to the embodiment of the present invention described above can be applied to an information storage device using a magnetic domain wall movement. An example thereof is shown in Fig. 6 is a perspective view showing an information storage apparatus using a magnetic domain wall movement including a track 1000 according to an embodiment of the present invention.

Referring to FIG. 6, a track 1000 may be provided extending in a predetermined direction, for example, an X-axis direction. The track 1000 may have any of the tracks 100, 200, 300 of FIGS. 1, 4, and 5, or a modified structure thereof. The tracks 1000 may have a plurality of magnetic domain regions successively arranged in a line along their extending direction (i.e., the X axis direction). A magnetic domain wall region may be provided between adjacent two magnetic domain regions. The track 1000 can be used as an information storage element for storing information in each magnetic domain. The shape of the track 1000 is not limited to that shown in the drawings, and may be variously modified.

At least one of both ends of the track 1000 may be connected to the transistor. For example, as shown, both ends of the track 1000 may be connected to the first and second transistors T1 and T2. At least one of the first and second transistors T1 and T2 may be connected to a current source (not shown). The current source and the first and second transistors T1 and T2 may constitute a " magnetic domain wall moving means "connected to the track 1000. [ A predetermined current may be applied to the track 1000 using the current source and the first and second transistors T1 and T2 to move the magnetic domain wall and the magnetic domain wall within the track 1000. [ The direction of the current can be controlled by controlling the ON and OFF states of the first and second transistors T1 and T2 and the moving direction of the magnetic domain wall and the magnetic domain wall can be changed according to the direction of the current have. Since the direction of the current is opposite to the direction of the electrons, the magnetic domain and the magnetic domain wall move in the direction opposite to the direction of the current. Instead of connecting both ends of the track 1000 with the first and second transistors T1 and T2, one or both of the transistors may be connected to one of both ends of the track 1000. [ Instead of transistors, other switching devices such as diodes may be used. Besides, the configuration of the "magnetic wall moving means" may be variously modified.

A reading means 2000 and a writing means 3000 may be provided on a predetermined area of the track 1000. [ The reading means 2000 and the writing means 3000 may be provided on the upper surface of the track 1000, but may be provided on the lower surface thereof. In some cases, the reading means 2000 and the writing means 3000 may be provided on the side surface of the track 1000. The reading means 2000 and the writing means 3000 may each have a length corresponding to one magnetic domain. The reading means 2000 may be a GMR sensor using a giant magneto resistance (hereinafter GMR) effect or a TMR sensor using a tunnel magneto resistance (hereinafter, TMR) effect. When the information on the track 1000 is read by the reading means 2000, the reproduction signal of the reading means 2000 is dominantly reproduced by the magnetic layer closest to the reading means 2000 among the plurality of magnetic layers constituting the track 1000 can be dominantly determined. For example, if the reading means 2000 is located on the bottom surface of the first magnetic domain D1 of FIG. 1, the reproducing signal can be determined by the magnetization direction of the first magnetic layer 10 of the magnetic domain D1. Therefore, when the magnetization direction of the portion of the first magnetic layer 10 in the magnetic domain D1 is read, it can be regarded as reading the data of the magnetic domain D1. On the other hand, the writing means 3000 may be a GMR or TMR recording device. The writing means 3000 may be a device that performs writing using an external magnetic field. In this case, the writing means 3000 may be spaced apart from the track 1000 by a predetermined distance. If the writing means 3000 is located on the bottom surface of the first magnetic domain D1 of FIG. 1, the magnetization direction of the portion of the first magnetic layer 10 adjacent thereto by the writing means 3000 can be reversed, The magnetization direction of the second magnetic layer 20 region can be automatically reversed. The writing method has been described in detail above, so we will briefly mention here. The reading and writing mechanism, the structure and the forming position of the reading means 2000 and the writing means 3000 are not limited to those described above and may be variously changed. For example, instead of having the reading means 2000 and the writing means 3000, an integrated type of reading / writing means combining the reading function and the writing function can be provided.

The reading means 2000 or the writing means 3000 may be used while moving the magnetic domain wall and the magnetic domain wall bit by bit by applying a current to the track 1000 by the current application means including the first and second transistors T1 and T2. So that information can be reproduced or recorded. Thus, the information storage device of FIG. 6 may be an information storage device using a magnetic domain wall movement.

In this embodiment, since the threshold current density for moving the magnetic domain wall and the magnetic domain wall of the track 1000 is low, the power consumption of the information storage device can be small and the problem of Joule heating can be suppressed . In addition, since the sizes of the elements for applying the current for moving the magnetic domain wall and the magnetic domain wall (i.e., the first and second transistors T1 and T2 in FIG. 6) can be reduced, the degree of integration can be easily improved.

Although a number of matters have been specifically described in the above description, they should be interpreted as examples of preferred embodiments rather than limiting the scope of the invention. For example, those skilled in the art will recognize that a track according to an embodiment of the present invention may include not only the information storage device (memory) as shown in FIG. 6 but also all other devices It will be understood that the present invention can be applied to the field. It will also be appreciated that the structures of Figures 1, 4, and 5 may be modified in various ways. As a specific example, the magnetic layers 10, 20, and 30 may be formed of materials and structures having in-plane magnetic anisotropy, not perpendicular magnetic anisotropy. In addition, by using a track having a multi-layered structure capable of lowering the saturation magnetization amount (Ms) even if it is not necessarily the SAF structure, it is possible to obtain the effect (that is, the reduction of the threshold current for the magnetic domain wall movement) . Therefore, the scope of the present invention is not to be determined by the described embodiments but should be determined by the technical idea described in the claims.

Claims (13)

A track including a SAF (synthetic antiferromagnet) structure having a plurality of magnetic domain regions arranged in the extending direction and a magnetic domain wall region therebetween;
A magnetic domain wall moving means for moving a magnetic domain wall of the track; And
And reading / writing means for reproducing and recording information on the track,
The track includes a first magnetic layer; And
And a second magnetic layer formed on either the upper surface or the lower surface of the first magnetic layer to form the first magnetic layer and the SAF structure,
When the magnetization direction of the magnetic domain is changed by the writing means in either one of the first magnetic layer and the second magnetic layer, the magnetization direction of the magnetic domain of the other one of the magnetic layers also changes,
Wherein the first magnetic layer and the second magnetic layer include a corresponding magnetic domain region and a corresponding magnetic domain wall region, respectively. The method according to claim 1,
Wherein the first magnetic layer and the second magnetic layer include a fragile magnetic domain wall region at the same position in the extending direction when viewed from a plan view. The method according to claim 1,
Wherein the thickness of the second magnetic layer is thinner than the thickness of the first magnetic layer. The method according to claim 1,
Wherein the thickness of the first magnetic layer is 0.3 to 10 nm. The method according to claim 1,
And the thickness of the second magnetic layer is 0.1 to 1 nm. The method according to claim 1,
Wherein an exchange coupling constant (Jex) between the first magnetic layer and the second magnetic layer satisfies -1? Jex <0 (unit: erg / cm). The method according to claim 1,
Wherein the first and second magnetic layers have perpendicular magnetic anisotropy. The method according to claim 1,
And a third magnetic layer forming an SAF structure with the first magnetic layer on the other of the upper surface and the lower surface of the first magnetic layer. delete 9. The method of claim 8,
Wherein the first to third magnetic layers have perpendicular magnetic anisotropy. delete delete The method according to claim 1,
Wherein the track further comprises a spacer layer between the first magnetic layer and the second magnetic layer.
KR1020100011195A 2010-02-05 2010-02-05 Magnetic track amd information storage device including the same KR101698931B1 (en)

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