KR101697462B1 - VERTICAL TYPE ULTRA-VIOLET LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING OF THE SAME, AlN TEMPLETE FOR VERTICAL TYPE ULTRA-VIOLET LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING OF THE SAME - Google Patents

Abstract

In the present invention, disclosed are a vertical type ultraviolet light emitting device, a manufacturing method thereof, an AlN template for the vertical type ultraviolet light emitting device, and a manufacturing method thereof. According to the present invention, as a method for manufacturing a vertical ultraviolet light emitting device using a reaction chamber, provided is the method for manufacturing a vertical ultraviolet light emitting device which includes the steps of: (a) forming a single crystal layer including GaN on a sapphire substrate; (b) forming a single crystal AlN layer on the single crystal layer including GaN; and (c) growing a UV LED epitaxial layer on the single crystal AlN layer. The step (a) and the step (b) are performed through a discontinuous process. Accordingly, the present invention can improve yield by improving a bending property.

Description

TECHNICAL FIELD [0001] The present invention relates to a vertical ultraviolet light-emitting device, a method of manufacturing the same, an AlN template for a vertical ultraviolet light-emitting device, and a method of manufacturing the same. BACKGROUND ART [0002] AND METHOD FOR MANUFACTURING OF THE SAME}

The present invention relates to a vertical type ultraviolet light emitting device, a method of manufacturing the same, an AlN template for a vertical type ultraviolet light emitting device, and a method of manufacturing the same.

In general, an ultraviolet light emitting device emitting ultraviolet rays of 220 to 340 nm is manufactured in a high-temperature MOCVD apparatus of 1300 ° C or more. More specifically, in a conventional ultraviolet light-emitting device, an AlN nitride semiconductor having a thickness of 1 탆 or more is used as a matrix on a sapphire substrate in a high-temperature MOCVD apparatus having a temperature of 1300 캜 or higher, and a desired ultraviolet wavelength band (UV- B: 280 to 340 nm), a method of growing an n-AlGaN nitride semiconductor, a multiple quantum well active layer, a p-AlGaN nitride semiconductor, and finally a p-GaN electrode contact layer.

Since existing UV-B / C LEDs grow on AlN substrate or AlN template, they can be fabricated only with flip chip.

Laser lift off process is required to fabricate the ultraviolet light emitting device vertically and a GaN layer is necessarily required on the sapphire.

However, the crystal lattice difference between GaN and AlN is known to be impossible to grow a single crystal AlN layer directly on the GaN layer.

In order to solve such a problem, various techniques such as providing an AlGaN superlattice layer and an Al compositional change layer in AlGaN have been tried. However, when a different layer is placed, a process of growing / removing a layer not necessary for manufacturing an ultraviolet light emitting device There is a problem that the manufacturing cost is increased.

As background technology related to the present invention, there is an ultraviolet light emitting element and a manufacturing method thereof disclosed in Korean Patent Publication No. 10-2008-0008306 (published on Jan. 23, 2008).

In order to solve the problems of the prior art described above, the present invention proposes a vertical type ultraviolet light emitting device, a method of manufacturing the same, an AlN template for a vertical type ultraviolet light emitting device, and a method of manufacturing the same, do.

According to an embodiment of the present invention, there is provided a method of manufacturing a vertical ultraviolet light emitting device using a reaction chamber, comprising: (a) forming a single crystal layer containing GaN on a sapphire substrate; ; (b) forming a single crystal AlN layer on the single crystal layer containing GaN; And (c) growing a UV LED epitaxial layer on the single crystal AlN layer, wherein the steps (a) and (b) comprise a discontinuous process.

Wherein the reaction chamber is an MOCVD reaction chamber, and the step (a) includes growing a single crystal layer containing GaN on the sapphire substrate under a predetermined temperature and pressure condition in the MOCVD reaction chamber, and after the step (a) (B) may be performed in the MOCVD reaction chamber after maintaining the sapphire substrate and the single crystal layer including GaN at a subatmospheric pressure and a room temperature condition for a predetermined time.

The step (b) may be performed at a temperature ranging from 1000 to 1200 ° C.

The step (b) may be carried out under excessive Al conditions.

The concentration of Al in step (b) may range from 500 to 3000 μmole.

The thickness of the single crystal layer including GaN may be in the range of 1 to 5 mu m.

The thickness of the single crystal AlN layer may range from 0.1 to 0.4 mu m.

The single crystal AlN layer may be formed in direct contact with the single crystal layer containing GaN.

The sapphire substrate may have a diameter of 2 to 6 inches.

The single crystal layer containing GaN may be at least one of a single crystal GaN layer, a single crystal InGaN layer and a single crystal InAlGaN layer.

The method may further include forming a GaN buffer layer prior to the step (a).

According to another aspect of the present invention, there is provided a method of manufacturing an AlN template for a vertical ultraviolet light emitting device using a reaction chamber, comprising the steps of: (a) forming a single crystal layer containing GaN on a sapphire substrate; And (b) forming a monocrystalline AlN layer on the single crystal layer comprising GaN, wherein the steps (a) and (b) comprise a discontinuous process for fabricating an AlN template for a vertical type ultraviolet light emitting device / RTI >

According to another aspect of the present invention, there is provided a method of manufacturing an AlN template for a vertical ultraviolet light emitting device using a reaction chamber, comprising: (a) forming a single crystal layer containing GaN on a sapphire substrate; (b) removing the thermal energy of the single crystal layer including GaN for a predetermined time after the step (a); And (c) after the thermal energy is removed, forming a single crystal AlN layer on the single crystal layer containing GaN.

According to another aspect of the present invention, there is provided a vertical type ultraviolet light emitting device comprising: a sapphire substrate; A single crystal layer including GaN formed on the sapphire substrate; A single crystal AlN layer formed on the single crystal layer containing GaN; And a UV LED epitaxial layer grown on the single crystal AlN layer, wherein the single crystal layer including GaN and the single crystal AlN layer are formed through a discontinuous process in the same reaction chamber .

According to another aspect of the present invention, there is provided an AlN template for a vertical ultraviolet light emitting device, comprising: a sapphire substrate; A single crystal layer including GaN formed on the sapphire substrate; And a single crystal AlN layer formed on the single crystal layer containing GaN, wherein the single crystal layer including GaN and the single crystal AlN layer are formed by a continuous process in a same reaction chamber for a vertical ultraviolet light emitting device An AlN template is provided.

 According to the present invention, a monocrystalline AlN layer can be grown directly on a single crystal layer containing GaN through thermal energy elimination.

FIG. 1 is a view for explaining a process of growing monocrystalline AlN or AlGaN (> 80%) by a conventional method.
FIG. 2 is a diagram showing a microscope image and PL map data of the AlxGa1-xN (0 <x <1) layer formed through the process of FIG.
FIG. 3 is a view for explaining the process of growing a single crystal AlN layer or an AlGaN (> 80%) layer through introduction of an AlN buffer layer under a high temperature condition.
4 is a microscope image of the AlN layer formed through the process of FIG.
5 is a view for explaining the process of growing monocrystalline AlN or AlGaN (> 80%) through introduction of AlN buffer under a temperature condition of 1100 to 1200 ° C.
6 is a microscope image of the AlN layer formed through the process of FIG.
7 is a view showing various types of cracks of the AlN layer formed through the above-described method.
8 is a view for explaining a process of fabricating an AlN template on a GaN template according to an embodiment of the present invention.
9 is a microscope image of a single crystal AlN layer of an AlN template on a GaN template according to an embodiment of the present invention.
10 is a TEM image of an AlN template according to the present embodiment.
11 is a view for explaining a process of fabricating an AlN template and an ultraviolet light emitting device including the same according to the present embodiment.
12 is a view for explaining the process of forming the first electrode layer of the ultraviolet light emitting device according to this embodiment.
13 is a view for explaining a process of forming the first and second electrode metal layers of the ultraviolet light emitting device according to the present embodiment.

While the invention is susceptible to various modifications and alternative forms, specific embodiments thereof are shown by way of example in the drawings and will herein be described in detail.

It is to be understood, however, that the invention is not to be limited to the specific embodiments, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing.

Hereinafter, embodiments according to the present invention will be described in detail with reference to the accompanying drawings.

Before describing the present invention in detail, the reason why it is difficult to produce a vertical ultraviolet light-emitting device will be described.

Vertical for AlN template  Growth technology

Since existing UV-B / C LEDs grow on AlN substrate or AlN template, they can be fabricated only with flip chip.

Laser lift off process is required to fabricate the ultraviolet light emitting device vertically and a GaN layer is necessarily required on the sapphire.

Although the laser lift off process of AlN layer is possible, it is impossible to perform laser lift off of AlN layer as a device capable of performing GaN Laser Lift Off. Therefore, new equipment is necessary, and even if AlN Laser Lift Off is purchased In fact, since the energy of the laser is high during the AlN laser lift off, it affects not only the interface between the AlN and the sapphire, but also the inside of the device after the laser lift off process.

Therefore, a GaN layer is indispensable for the growth of the UV LED epilayers of a vertical UV light-emitting device.

However, the difference in crystal lattice between GaN and AlN makes it impossible to grow a single crystal AlN layer directly on the GaN layer.

To solve this problem, various techniques such as providing an AlGaN superlattice layer and an Al compositional change layer in AlGaN have been tried.

In addition, an AlN buffer layer is inserted similarly to the growth method of monocrystalline GaN. However, in order to grow monocrystalline AlN, the above-described AlGaN super lattice layer and Al compositional change layer in AlGaN are inserted to reduce the difference in crystal lattice between GaN and AlN , And then the AlN single crystal is grown or a high-composition (> 80%) AlGaN layer is grown.

The layer for reducing the difference in crystal lattice between GaN and AlN is a layer that must be removed in forming a first electrode (n-electrode) layer in a vertical device manufacturing process thereafter. This is a reason for an increase in manufacturing cost due to growth / removal of a layer which is not necessary in the fabrication of the vertical type ultraviolet light emitting device.

Therefore, the process of forming a high-composition AlGaN layer or AlN layer that is in contact with the GaN layer and has no cracks is difficult and complicated.

Vertical for AlN template  Growth method

GaN buffer is grown on sapphire. The growth temperature is 550 to 650 DEG C and the grown thickness is 30 to 100 nm. Then, a GaN single crystal is grown. The growth temperature is 1000 to 1100 占 폚, and the grown thickness is 1.0 to 5.0 占 퐉.

The growth of AlN or AlGaN (> 80%) single crystal after GaN growth can be roughly divided into two methods.

Generally, a method of continuously growing a single crystal AlN or AlGaN (> 80%) after changing the growth condition by supplying gas continuously to a MOCVD (Metalorganic Chemical Vapor Deposition) reaction chamber after growing the single crystal GaN, adjusting the growth temperature use.

However, in the conventional method, there is a process of changing to a single crystal AlN or AlGaN (> 80%) growth condition without removing the thermal energy remaining in sapphire / GaN after GaN growth. In the case of AlN growth condition, the content of ammonia in the MOCVD reaction chamber should be small and its growth temperature should be equal to or higher than that of GaN growth condition. This environmental change in the MOCVD reaction chamber induces the dissociation of already grown GaN to induce the process of GaN decomposition and the decomposed Ga is recombined with Al and N supplied for the growth of AlN, _x Ga _{1 - x} N layer (0 < x < 1) is formed.

1 is a view illustrating a process of growing the single crystal AlN or AlGaN (> 80%) over the conventional general methods, Figure 2 is _{Al x Ga 1 -x N (0} <x formed by the process of Figure 1 &Lt; 1) layer microscope image and PL map data.

As shown in Figure 2, Al _x Ga ₁ formed according to the conventional method _{- x} N layer is a difference determined between a single composition that has an AlGaN layer and a variety of single-layer Al composition of a non-uniform layer, or GaN and AlN according to the position in the different lattice A large amount of cracks are present.

An AlN buffer layer may be introduced to overcome the problems of the conventional AlN growth method.

The method of introducing the AlN buffer layer is divided into the following three methods.

First, the AlN buffer layer is grown at a temperature lower than the GaN growth temperature and relatively lower than the GaN growth temperature without changing the ammonia in the process of changing to the AlN growth condition after the GaN growth.

Second, the AlN buffer layer is grown after changing the growth temperature to lower than the ammonia and GaN growth temperature, and then changed to a high temperature (> 1300 degrees) to grow a single crystal AlN layer.

Third, there is a method of growing a single crystal AlN layer or an AlGaN (> 80%) layer between 1100 and 1200 ° C after growing the AlN buffer layer after changing the growth temperature to lower than ammonia and GaN growth temperature.

Among the above three methods, in order to grow a single crystal AlN layer, the method of proceeding at a high temperature (1300 ° C. or more) is that the decomposition of GaN proceeds even though ammonia is supplied at a high temperature (> 1300 ° C.) In order to move to a high temperature (> 1300 ° C) even if a single crystal AlN layer is possible at high temperature, it is impossible to grow the currently commercialized blue LED Epi MOCVD reaction chamber and purchase a new MOCVD reaction chamber or use Blue LED Epi The MOCVD reaction chamber should be modified. This can not be practically carried out because a large-scale modification work of the MOCVD reaction chamber is required.

FIG. 3 is a view illustrating a process of growing a single crystal AlN layer or an AlGaN (> 80%) layer through introduction of an AlN buffer layer under a high temperature condition, and FIG. 4 is a microscope image of the AlN layer formed through the process of FIG. FIG.

In the other two methods, a single crystal AlN layer is grown at 1100 to 1200 ° C, or an AlGaN (80%) single crystal is grown. However, even if a single crystal AlN layer is grown at 1100 to 1200 ° C, good quality can not be obtained, and even if a single crystal AlN layer is grown, many cracks must be generated.

5 is a view for explaining a process of growing single crystal AlN or AlGaN (> 80%) through introduction of an AlN buffer under a temperature condition of 1100 to 1200 ° C., FIG. 6 is a view for explaining a microscopic image of an AlN layer formed through the process of FIG. Fig.

Due to this problem, AlGaN (> 80%) layer grows instead of single crystal AlN layer growth. However, this method also requires an inter layer (superlattice layer, Al composition change layer, etc.) to overcome the difference in crystal lattice of GaN and the growth rate of Ga and Al. As described above, this increases the cost of the process by increasing the process time required to be removed in the vertical chip process.

The reason why the growth of monocrystalline AlN is difficult at 1100 to 1200 ° C is because the atomic size of Al is smaller than that of Ga / In and the energy required for moving the substrate on the substrate is high. Therefore, when single crystal AlN is grown at 1100 to 1200 ° C using a MOCVD reaction chamber for blue LED Epi, the single crystal AlN layer grows in a flat and shinny shape that is completely merged in the wafer to be grown, The height of the AlN throughout the entire wafer can be varied in various forms, such as a completely different shape, or a cracked shape.

7 is a view showing various types of cracks of the AlN layer formed through the above-described method.

In order to solve this problem, according to a preferred embodiment of the present invention, a GaN single crystal is grown in a MOCVD reaction chamber, and then a sapphire / GaN buffer layer / GaN layer In the MOCVD reaction chamber, the GaN crystal is stabilized by moving atmospheric pressure / room temperature or low pressure / room temperature to remove the remaining thermal energy from the sapphire / GaN buffer layer / GaN and then moving to the MOCVD reaction chamber to grow AlN do.

8 is a view for explaining a process of fabricating an AlN template on a GaN template according to an embodiment of the present invention.

Referring to FIG. 8, a GaN buffer layer is grown under a temperature condition of 550 to 650 ° C, and then a single crystal GaN layer is grown under a temperature condition of 1000 to 1100 ° C.

Next, the sapphire / GaN buffer layer / GaN layer is moved under atmospheric pressure to a room temperature condition to remove heat energy, and a single crystal AlN layer formation process is performed in the reaction chamber. At this time, the temperature of the wafer is kept below 200 캜.

As described above, in the AlN template according to this embodiment, the single crystal GaN layer and the single crystal AlN layer are formed by a discontinuous process in the MOCVD reaction chamber.

In the present specification, a discontinuous process is a process in which a sapphire / GaN buffer layer / a GaN layer is formed by removing a thermal energy at a temperature lower than an atmospheric pressure and a room temperature for a predetermined time after forming a single crystal GaN layer at a temperature of 1000 캜 or higher, Is defined as a step in which there is a sudden change in the temperature condition between the formation of the single crystal GaN layer and the single crystal AlN layer as in the step of forming the AlN layer.

As described below, the discontinuous process according to this embodiment includes forming a monocrystalline GaN layer in the reaction chamber, and then moving the sapphire / GaN buffer layer / GaN layer out of the reaction chamber and then forming a single crystal AlN layer Lt; / RTI &gt;

However, without being limited thereto, it is also possible to form a single crystal GaN layer in the reaction chamber and lower the temperature of the reaction chamber to a temperature at which thermal energy can be removed, and to form a single crystal AlN layer again.

As described above, the single crystal GaN layer may be formed on the sapphire substrate. However, the single crystal GaN layer may be formed of a single crystal InGaN layer or a single crystal InAlGaN layer including GaN.

Here, the temperature condition for forming the single crystal AlN layer may be 1100 to 1200 캜.

FIG. 9 is a microscope image of a single-crystal AlN layer of an AlN template on a GaN template according to an embodiment of the present invention, and FIG. 10 is a TEM image of an AlN template according to the present embodiment.

As shown in FIG. 9, when the AlN template is manufactured through the process according to this embodiment, it can be confirmed that the cracks are removed.

Also, it can be seen that a single-crystal AlN layer is formed directly on the single crystal GaN layer as shown in FIG. 10 through the process according to this embodiment.

These changes in growth conditions have the following advantages.

The conditions such as the energy applied to the GaN layer when the first AlN growth condition is changed are lower than the minimum energy required for starting the GaN dissociation / decomposition, thereby preventing the dissociation / decomposition process of the GaN.

In the process using the conditions of 1100 to 1200 ° C, an excessive amount of ammonia was flowed into the MOCVD reaction chamber for the growth of monocrystalline AlN, which originally blocked the decomposition of GaN and increased the property of Al bonding with N and stabilizing with AlN.

The three second generally supplying an excess of Al in order to grow a single crystal AlN layer on the AlN known growth temperature (> 1300 ℃) low temperature (1100 to 1200 ℃) than into the MOCVD reaction chamber to grow a single crystal AlN layer.

Conditions for growing the single crystal GaN layer and single crystal AlN layer according to this embodiment are as follows.

Growth temperature
(° C) Growth pressure
(Torr) NH ₃
(L / min)

)Ga
(

) Al
(

) GaN 1000 ~ 1100 100 to 300 20 to 60 100 to 10,000 AlN 1000 to 1200 25-100 5 ~ 60 500 ~ 3,000

11 is a view for explaining a process of fabricating an AlN template and an ultraviolet light emitting device including the same according to the present embodiment.

As shown in Fig. 11, a single crystal GaN layer is formed on the sapphire substrate in the reaction chamber, and then the wafer temperature is lower than 200 DEG C at atmospheric pressure / room temperature or low pressure / room temperature for a preset time.

Thereafter, the sapphire / single crystal GaN layer is moved to the reaction chamber and excess Al is added to form a single crystal AlN layer.

After fabricating the AlN template, a UV LED epilayer is grown.

The growth of the UV LED epitaxial layer may be performed in a continuous process in the reaction chamber, but the present invention is not limited thereto. For example, the single crystal GaN layer may be formed on the sapphire substrate in the reaction chamber, Lt; RTI ID = 0.0 &gt; 200 C &lt; / RTI &gt;

Here, the UV LED epilayers may include an Al _x Ga _{1 - x} N layer, an nAl _y Ga _{1 - y} N layer, an active layer, and a pAl _z Ga _{1 - z} N layer. Further, a pGaN layer may be additionally formed on the pAl _z Ga _{1 - z} N layer.

Here, nAl _y Ga _{1 - y} N layer is defined as a first conductivity type nitride semiconductor layer, pAl _z Ga _{1 -z} N layer is defined as a second conductivity type nitride semiconductor layer.

The first conductive type nitride semiconductor layer is formed of Al _y Ga _{1 - y} N (0.4 ≦ _y ≦ ₁ ) doped with the first conductive type impurity, and the active layer is formed of Al _e Ga _{1 -e} N (0 <e <1) Layer and Al _f Ga _{1 -f} N (0 < f < 1, e < f) layers are alternately laminated one or more times, and the second conductivity type nitride semiconductor layer is formed by alternately laminating the second conductive type impurity And a layer of Al _z Ga _{1 - z} N (0.4 _{? Z? 1} ) layer doped with a conductive impurity.

Thereafter, a reflective / ohmic / second electrode metal layer is formed on the second conductive type nitride semiconductor layer.

After forming the second electrode metal layer, the sapphire substrate is removed through a laser lift off process, and the single crystal GaN layer is removed through wet etching.

12 is a view for explaining the process of forming the first electrode layer of the ultraviolet light emitting device according to this embodiment.

As shown in FIG. 12, the first electrode layer may be formed through a hole, and may be formed after removing the AlN layer and Al _x Ga _{1 - x} N.

13, the first electrode metal layer and the second electrode metal layer may be provided on the same surface. After forming the first electrode metal layer and the second electrode metal layer, the sapphire substrate is removed through a laser lift off process, The single crystal GaN layer is removed by wet etching.

Bow  Control technology

Because of the difference in crystal lattice between AlN and sapphire, ultraviolet light emitting devices that grow on AlN template or AlN substrate have high wafer warping after UV LED epi fabrication, which causes difficult and complicated fab process and lowers process yield.

For this reason, UV LED Epi growth is mostly using 2 inches, and even if a 2 inch UV LED epilayer is grown, it faces a problem of low yield (<50%).

Improved bending property

As shown in [Table 2], when a single crystal GaN layer or a single crystal AlN layer is grown on a sapphire substrate to fabricate a GaN template or an AlN template, the wafer bow value is measured at room temperature and the warpage of the AlN layer is high . This is because the crystal lattice spacing of the single crystal AlN layer is narrower than the crystal lattice spacing of GaN, so that the warpage of the wafer becomes larger when the template is fabricated.

Thickness (㎛) Bow AlN template 2.81 50 GaN template 3.0 30

When the UV LED Epi is grown using this AlN / GaN template, the main Al content of the grown UV LED Epi is more than 50%, so that it has characteristics similar to the crystal of AlN instead of the crystal of GaN. As a result, wafer warpage measured after completion of UV LED Epi growth has a larger value as shown in [Table 3].

I'm after Before / After Difference Thickness ① Bow② Thickness ③ Bow ④ Thickness ③-① Bow ④-②
AlN
template

Sample 1 1.249 12.107 2.508 63.821 1.259 51.714 Sample 2 1.162 8.162 2.494 50.961 1.332 42.799 Sample 3 1.097 7.128 2.43 53.999 1.333 46.871 Sample 4 1.132 12.442 2.413 58.716 1.281 46.274 Average 1.16 9.96 2.46 56.87 1.30 46.91
GaN
template

Sample 1 2.185 21.977 3.466 27.719 1.281 5.742 Sample 2 2.192 21.249 3.563 28.932 1.371 7.683 Sample 3 2.193 21.402 3.572 29.057 1.379 7.655 Sample 4 2.152 23.541 3.515 30.56 1.363 7.019 Average 2.18 22.04 3.53 29.07 1.35 7.02

However, in order to construct an actual UV LED Epi device, it is necessary to grow 3 to 4 μm thicker than the thickness (1.3 μm) grown in [Table 3]. As shown in [Table 4], it is confirmed that the deviation is much larger when the thickness is grown in the AlN / GaN template.

Before growth After growth Deviation Thickness ① Bow② Thickness ③ Bow ④ Thickness ③-① Bow ④-② AlN
template 1.4 11 5.4 112 4 101 GaN
template 2.4 27 6.4 54 4 27

As shown in [Table 4], the thick bending value of AlN template causes the process difficulty to be high and the process yield to be low in the photo process requiring flat state in the UV chip manufacturing process.

Therefore, growing a monocrystalline AlN layer on a single crystal GaN layer and then growing a UV LED Epi layer makes it possible to keep the wafer warpage lower than the AlN template, thus facilitating the fab process.

The thickness of GaN grown on sapphire is also an important factor in determining the bending value of the subsequently grown UV LED Epi layer.

I'm after Before / After Difference Thickness ① Bow② Thickness ③ Bow ④ Thickness ③-① Bow ④-② GaN
template Thickness 2.4㎛ 2.387 19.285 3.918 39.147 1.531 19.862 Thickness 3.0 탆 3.014 30.983 4.534 44.135 1.52 13.152

As described above, the growth of the single crystal AlN layer on the single crystal GaN layer and the growth of the UV LED Epi have a lower warping value than the conventional one, thereby facilitating the subsequent chip fabrication process and improving the yield.

It will be apparent to those skilled in the art that various modifications, additions and substitutions are possible, without departing from the spirit and scope of the invention as defined by the appended claims. Should be regarded as belonging to the following claims.

Claims (15)

A method of manufacturing a vertical ultraviolet light emitting device using a reaction chamber,
(a) forming a single crystal layer containing GaN on a sapphire substrate;
(b) forming a single crystal AlN layer on the single crystal layer containing GaN; And
(c) growing a UV LED epitaxial layer on the single crystal AlN layer,
Wherein the step (a) and the step (b) comprise a discontinuous process. The method according to claim 1,
The reaction chamber is an MOCVD reaction chamber,
In the step (a), the GaN-containing single crystal layer is grown on the sapphire substrate under a preset temperature and pressure condition in the MOCVD reaction chamber,
After the step (a), the single crystal layer including the sapphire substrate and the GaN is maintained at a subatmospheric pressure and a room temperature condition for a preset time, and then the vertical ultraviolet light emission Lt; / RTI &gt; 3. The method of claim 2,
Wherein the step (b) is performed in a temperature range of 1000 to 1200 ° C. delete 3. The method of claim 2,
Wherein the concentration of Al in the step (b) ranges from 500 to 3000 μmole. The method according to claim 1,
Wherein the GaN-containing single crystal layer has a thickness ranging from 1 to 5 mu m. The method according to claim 1,
Wherein the thickness of the single crystal AlN layer is in the range of 0.1 to 0.4 mu m. The method according to claim 1,
Wherein the single crystal AlN layer is formed in direct contact with the single crystal layer containing GaN. The method according to claim 1,
Wherein the sapphire substrate has a diameter of 2 to 6 inches. The method according to claim 1,
Wherein the single crystal layer including GaN is at least one of a single crystal GaN layer, a single crystal InGaN layer, and a single crystal InAlGaN layer. The method according to claim 1,
Further comprising the step of forming a GaN buffer layer prior to the step (a). A method for producing an AlN template for a vertical ultraviolet light emitting device using a reaction chamber,
(a) forming a single crystal layer containing GaN on a sapphire substrate; And
(b) forming a single crystal AlN layer on the single crystal layer containing GaN,
Wherein the steps (a) and (b) comprise a discontinuous process. A method of manufacturing a vertical ultraviolet light emitting device using a reaction chamber,
(a) forming a single crystal layer containing GaN on a sapphire substrate;
(b) removing the thermal energy of the single crystal layer including GaN for a predetermined time after the step (a); And
(c) forming a single crystal AlN layer on the single crystal layer containing GaN after the thermal energy is removed.

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