KR101687371B1 - Patterning method of liquid metal using micro cantilever probe - Google Patents
Patterning method of liquid metal using micro cantilever probe Download PDFInfo
- Publication number
- KR101687371B1 KR101687371B1 KR1020150113876A KR20150113876A KR101687371B1 KR 101687371 B1 KR101687371 B1 KR 101687371B1 KR 1020150113876 A KR1020150113876 A KR 1020150113876A KR 20150113876 A KR20150113876 A KR 20150113876A KR 101687371 B1 KR101687371 B1 KR 101687371B1
- Authority
- KR
- South Korea
- Prior art keywords
- liquid metal
- substrate
- metal pattern
- target
- probe
- Prior art date
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- 229910001338 liquidmetal Inorganic materials 0.000 title claims abstract description 91
- 239000000523 sample Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 44
- 238000000059 patterning Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 230000005496 eutectics Effects 0.000 claims description 11
- 229910000846 In alloy Inorganic materials 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 230000007261 regionalization Effects 0.000 abstract 2
- 238000012546 transfer Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000007790 solid phase Substances 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229920005839 ecoflex® Polymers 0.000 description 1
- SAZXSKLZZOUTCH-UHFFFAOYSA-N germanium indium Chemical compound [Ge].[In] SAZXSKLZZOUTCH-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003079 width control Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
- H01L21/4828—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
The present invention relates to a method of forming a metal pattern, and more particularly to a method of forming a liquid metal pattern on a target such as a microelectronic device.
Liquid metal is generally referred to as a metal which is relatively high in melting point and held in a liquid state at room temperature. In recent years, studies have been actively conducted on the formation of nano-sized fine patterns in micro semiconductor devices such as antennas for wireless communication, diodes and memristors for logic circuits, and display for strain, force, or pressure measurement using such liquid metal.
On the other hand, liquid metals such as eutectic gallium-indium alloy (eGain), gallium-indium-tin alloy, and Indalloy under the trade name of Galistan have high electrical conductivity, Toxic material that can be used as a substitute for a semiconductor device.
In particular, the eutectic gallium-indium alloy has a melting point of less than 15 ° C., so that it maintains a liquid state at room temperature, and when exposed to the atmosphere, forms an oxide film and thus has high wettability with respect to a surface of a nonmetallic material. The eutectic gallium-indium alloy can form a stable independent structure while maintaining its shape by the surface oxide film.
Conventionally, various methods for forming a fine pattern made of a liquid metal have been attempted based on such properties of the eutectic gallium-indium alloy by spraying an atomic level droplet, directly printing through a nozzle, or drawing using a ball pen However, there is a limitation in implementing a pattern width of nano size, and there is a problem that a fine line width is not short-circuited or is not produced smoothly.
It is an object of the present invention to provide a method for reliably forming a nano-sized liquid metal pattern without short circuit.
The gist of the present invention regarding the recognition of the above-mentioned problems and the solution means based on the above is as follows.
(1) the liquid metal pattern is transferred from the substrate to the target after the liquid metal pattern is formed while moving the cantilever probe under pressure against the substrate, wherein the cantilever probe and the substrate are provided with the liquid metal And at least one of the constituent alloy components is contained.
(2) The liquid metal pattern forming method according to (1), wherein the liquid metal is a eutectic gallium-indium alloy.
(3) The method for forming a liquid metal pattern according to (2), wherein the cantilever probe is formed of indium or deposited with indium.
(4) The method for forming a liquid metal pattern according to (2), wherein the liquid metal is composed of 25 wt% of indium and 75 wt% of gallium.
(5) The method of forming a liquid metal pattern according to (1), wherein the process of forming the liquid metal is performed in a state where the probe or the substrate is heated.
(6) A method for forming a liquid metal pattern according to (1), wherein a pretreatment of plasma treatment or a technique coating is performed on the surface of the substrate.
(7) The method for forming a liquid metal pattern according to (1), wherein the transfer process is performed in a state in which the opposing surfaces of the substrate and the target are parallel to each other.
(8) The method for forming a liquid metal pattern according to (1), wherein the target is any one of an electrode substrate, a strain gauge, a flexible electronic device or a micro-heater.
The method of forming a liquid metal pattern according to the present invention can reliably form a liquid metal pattern without a short circuit by conventionally forming a liquid metal in advance and then transferring it to a target.
Further, in the process of previously forming the liquid metal, the line width of the liquid metal pattern can be precisely controlled by controlling the radius of curvature of the cantilever probe. In this case, even if the radius of curvature of the cantilever probe is set to the nano- Size can be precisely controlled.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a process conceptual diagram of a method of forming a liquid metal pattern according to an embodiment of the present invention; FIG.
2 is a structural view of a cantilever probe according to an embodiment of the present invention;
3 is a cross-sectional structural view of a liquid metal pattern formed on a substrate according to an embodiment of the present invention.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. Throughout the specification, when an element is referred to as including, it is understood that it can include other elements, not excluding other elements, unless the context clearly indicates otherwise. In addition, when an element is referred to as being 'provided', is included or included, it is not necessarily a component adopted in connection with the solution of the present invention, but it is arbitrarily or advantageously adopted . In the drawings, some of the inventive features are exaggerated or omitted from the drawings as needed for convenience of description.
FIG. 1 shows a process conceptual diagram of a method of forming a liquid metal pattern (hereinafter abbreviated as 'pattern forming method') according to an embodiment of the present invention, and FIG. 2 shows a structure of a cantilever probe according to an embodiment of the present invention .
1, the pattern forming method includes aligning the
The
For example, when the liquid metal to be formed is a eutectic gallium-indium alloy, indium is contained in the
The
If the
On the other hand, the present invention focuses attention on a phenomenon that a specific solid-phase alloy component is changed into a liquid state by eutectic heat or pressure, and controlling the phenomenon to a nano-size, thereby forming a fine
The
In the process of forming the liquid metal, it is sufficient that the temperature due to the friction is 15.7 DEG C or higher. To the extent that the liquid metal forming condition is satisfied, the pressure condition applied to the
On the other hand, in a working environment in which the ambient temperature is excessively low due to inadequate formation of the liquid metal, the pressing condition of the
3 is a cross-sectional structural view of a liquid metal pattern formed on a substrate according to an embodiment of the present invention. 3, a solid-phase gallium oxide (GaO)
That is, liquid metal is formed as the
Subsequently, the
The
In this case, as the adhesion of the
The material of the
The problem that the
The transfer process is performed in a state in which the opposing surfaces of the
The product according to the target may be an electrode substrate, a strain gage, a flexible electronic device, a micro heater or the like.
As described above, the liquid metal pattern forming method according to the present invention can form the liquid metal pattern more reliably without short circuit than before by forming the liquid metal in advance and transferring it to the target. Further, in the process of previously forming the liquid metal, the line width of the liquid metal pattern can be precisely controlled by controlling the radius of curvature of the cantilever probe. In this case, even if the radius of curvature of the cantilever probe is set to the nano- Size can be precisely controlled.
While the foregoing is directed to a specific embodiment of the present invention, it is to be understood that the above-described embodiment of the present invention has been disclosed for the purpose of illustration and is not to be construed as limiting the scope of the present invention, It should be understood that various changes and modifications may be made to the disclosed embodiments without departing from the spirit of the invention.
For example, in the above embodiment, the liquid metal formed by the frictional reaction between the
In addition, the principle of formation of the liquid metal in the above embodiments can be applied to the case where the composition of the liquid metal or the composition ratio is different.
It is also possible to carry out the problem of the transfer process due to the difference in adhesion of the liquid metal to the substrate and each of the targets through a predetermined surface treatment for the target as opposed to the proposed embodiment.
It is therefore to be understood that all such modifications and alterations are intended to fall within the scope of the invention as disclosed in the following claims or their equivalents.
10: cantilever probe
20: substrate
30: Liquid metal pattern
32: oxide film
34: liquid metal
40: Target
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020150113876A KR101687371B1 (en) | 2015-08-12 | 2015-08-12 | Patterning method of liquid metal using micro cantilever probe |
Applications Claiming Priority (1)
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KR1020150113876A KR101687371B1 (en) | 2015-08-12 | 2015-08-12 | Patterning method of liquid metal using micro cantilever probe |
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KR101687371B1 true KR101687371B1 (en) | 2016-12-16 |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110491598A (en) * | 2019-07-09 | 2019-11-22 | 深圳大学 | A kind of liquid metal structure and its instantaneously pattern packaging method |
US10900848B2 (en) | 2018-11-02 | 2021-01-26 | United States Of America As Represented By The Secretary Of The Air Force | Articles comprising a resistor comprising core shell liquid metal encapsulates and method of detecting an impact |
US11102883B2 (en) | 2018-11-02 | 2021-08-24 | United States Of America As Represented By The Secretary Of The Air Force | Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands |
US11100223B2 (en) | 2018-11-02 | 2021-08-24 | United States Of America As Represented By The Secretary Of The Air Force | Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same |
US11406956B2 (en) | 2018-11-02 | 2022-08-09 | United States Of America As Represented By The Secretary Of The Air Force | Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power |
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2015
- 2015-08-12 KR KR1020150113876A patent/KR101687371B1/en active IP Right Grant
Non-Patent Citations (3)
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10900848B2 (en) | 2018-11-02 | 2021-01-26 | United States Of America As Represented By The Secretary Of The Air Force | Articles comprising a resistor comprising core shell liquid metal encapsulates and method of detecting an impact |
US11102883B2 (en) | 2018-11-02 | 2021-08-24 | United States Of America As Represented By The Secretary Of The Air Force | Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands |
US11100223B2 (en) | 2018-11-02 | 2021-08-24 | United States Of America As Represented By The Secretary Of The Air Force | Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same |
US11406956B2 (en) | 2018-11-02 | 2022-08-09 | United States Of America As Represented By The Secretary Of The Air Force | Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power |
US11691117B2 (en) | 2018-11-02 | 2023-07-04 | United States Of America As Represented By The Secretary Of The Air Force | Articles comprising core shell liquid metal encapsulate networks and method to control alternating current signals and power |
US11734422B2 (en) | 2018-11-02 | 2023-08-22 | United States Of America As Represented By The Secretary Of The Air Force | Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same |
US11856690B2 (en) | 2018-11-02 | 2023-12-26 | United States Of America As Represented By The Secretary Of The Air Force | Substrates comprising a network comprising core shell liquid metal encapsulates comprising multi-functional ligands |
US12093381B2 (en) | 2018-11-02 | 2024-09-17 | United States Of America As Represented By The Secretary Of The Air Force | Core shell liquid metal encapsulates comprising multi-functional ligands and networks comprising same |
CN110491598A (en) * | 2019-07-09 | 2019-11-22 | 深圳大学 | A kind of liquid metal structure and its instantaneously pattern packaging method |
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