KR101685405B1 - Repeller for ion implanter - Google Patents

Abstract

The present invention relates to a repeller installed inside an arc chamber of an ion generating device for an ion implanter, comprising: a reflector provided opposite to a cathode of the ion generator and having a circular surface; And a terminal portion to which a voltage is applied, and the reflective portion is formed with irregularities.

Description

Repeller for ion implanter}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a repeller for an ion implanter, and more particularly, to a repeller provided inside an arc chamber of an ion generating device for ion implantation used for manufacturing a semiconductor device, .

2. Description of the Related Art [0002] Semiconductor device manufacturing processes include a deposition process, a photolithography process, an etching process, and an ion implantation process. In the deposition process, sputtering, chemical vapor deposition, or the like is used as a process of forming a conductive film or an insulating film of a semiconductor device, and the photo process is a process of patting a photosensitive resin with a photomask having a predetermined pattern as a previous stage of the etching process , And the etching process is a process of patterning the underlying conductive film or insulating film using the photosensitive resin pattern.

The ion implantation process is a process for controlling the operation characteristics of an electronic device formed on a silicon wafer. In the past, a process of doping impurities into the inside of the film using thermal diffusion has been used. However, recently, Ion implantation method in which impurity ions are doped into a semiconductor substrate are mainly used.

The impurity doping process using the ion implantation method has an advantage that it is easier to control the concentration of the impurity than the thermal diffusion process, and is advantageous in adjusting or limiting the depth to be doped. In the ion implantation method, an ion implanter is used. The ion implanter includes an ion generator for generating ions to be doped with impurities, and an ion analyzer for controlling the kind and energy of generated ions.

The ion generating device heats the filament to emit thermoelectrons, and accelerates the emitted thermoelectrons by an electric field while colliding with the injected ion source gas to generate ions. In this case, a method of releasing the thermoelectrons is a method of directly heating a tungsten filament to emit thermoelectrons and a method of accelerating a thermoelectron emitted from a tungsten filament to a cathode to secondarily emit electrons again from the cathode. Deterioration of the filament material can be prevented and the replacement cycle of parts can be improved. The ion generating device is provided with a repeller opposed to the cathode. The repeller reflects the electrons emitted from the cathode toward the cathode so that electrons are concentrated in a predetermined region. A predetermined voltage may be applied to the repeller so as to reflect electrons.

Japanese Patent Laid-Open No. 1997-63981 discloses a prior art relating to a repeller for an ion implanter. The prior art document discloses an ion generating device comprising a filament disposed opposite to a chamber and a first electrode of negative potential and gas supply means for introducing gas into the chamber, wherein the opposing face of the first electrode to the filament is concave And the like.

In the ion generating device for an ion implanter, a gas which is a source of ions is injected, and in the arc chamber, the ion source gas is decomposed while colliding with electrons. At this time, a part of the decomposed gas can be deposited on the surface of the repeller, and the deposited material is peeled off from the surface of the repeller in the course of a thermal cycle, etc., thereby contaminating the inside of the arc chamber, (short) problems.

Therefore, there is a great need to develop a repeller capable of effectively improving the plasma efficiency in the arc chamber while effectively preventing the separation of the material deposited on the repeller.

Accordingly, a first object of the present invention is to provide a repeller for an ion implanter in which deposits deposited on the surface of a re-peller do not peel off even when the ion implanter is used for a long time.

A second object of the present invention is to provide an ion generating device including a repeller for the ion implanter.

In order to achieve the first object of the present invention, there is provided a repeller installed inside an arc chamber of an ion generating device for an ion implanter, comprising: a reflector provided opposite to a cathode of the ion generator and having a circular surface; And a terminal portion extending from the reflection portion and to which a predetermined voltage is applied, wherein the reflection portion is provided with projections and depressions.

According to an embodiment of the present invention, the concavities and convexities of the reflective portion may be composed of a plurality of concentric concave and convex portions.

According to another embodiment of the present invention, it is preferable that the plurality of depressions and protrusions have a step difference of 0.05 to 1.0 mm.

According to another embodiment of the present invention, the width ratio of the depressed portion to the protruding portion is preferably in the range of 1: 0.5 to 1: 2.

In order to achieve the second object, the present invention provides an ion generating device including a repeller for the ion implanter.

The repeller for an ion implanter of the present invention has the following effects.

1. Since the irregularities are formed on the surface of the re-pellet, the contact area between the deposited film and the surface of the re-pell is increased, effectively preventing the peel-off of the deposited film on the re-pell.

2. Since the concavities and convexities of the repeller surface are concentric, it prevents a part of the evaporated film from separating from the surface of the repeller even if some cracks are generated on the surface of the protruding portion and the surroundings.

3. Depressions and protrusions on the surface of the repeller are designed to have concentric circles and a predetermined range of line widths and steps to prevent cracks from being deposited on the surface of the repeller, It is possible to increase the uniformity of the plasma and improve the decomposition efficiency of the ion source gas.

1 shows the structure of an ion generating device for an ion implanter.
2 shows a structure of a conventional repeller for an ion implanter.
FIG. 3 illustrates a structure of a repeller for an ion implanter according to an embodiment of the present invention. Referring to FIG.
4 shows a state in which deposits are deposited non-uniformly on the surface of a repeller for an ion implanter.
FIG. 5 shows a state in which the deposition material is deposited on the surface of the repeller for the ion implanter, forming a uniform film.
6 illustrates a structure of an electron emission cathode for an ion implanter according to an embodiment of the present invention.
Fig. 7 is a view for explaining the angle at which the hot electrons are emitted from the heated solid surface. Fig.
FIG. 8 is a view for explaining the trajectory of an electron which is accelerated by an electric field and then spirally moves after a hot electron is emitted from a solid surface. FIG.
9 is a view for explaining the gas density distribution in the arc chamber.
10 is a view for explaining acceleration trajectories of electrons in an ion generating device to which an electron emission cathode of the present invention is applied.

A refeller installed inside an arc chamber of an ion generating device for an ion implanter, comprising: a reflector having a circular surface facing the cathode of the ion generator; and a reflector extending from the reflector, And a terminal portion to which the light emitting diode is applied, and the reflective portion is provided with projections and depressions.

1 shows the structure of an ion generating device for an ion implanter. 1, the ion generating device 100 includes an arc chamber 104 forming a predetermined space, a cathode 102 installed on one side of the arc chamber, a filament 101 installed in an inner space of the cathode, And a repeller 103 provided opposite to the cathode.

The filament 101 may be made of a metal having a high melting point, such as tungsten. When the current flows from a power source connected to the outside, the filament 101 is heated to a predetermined temperature and discharges thermoelectrons to the outside. The cathode 102 is spaced apart from the filament 101 by a predetermined distance. The cathode portion of the external power source is connected to the cathode, and the thermoelectrons emitted from the filament by the electric field formed between the filament and the cathode collide with the cathode, Electrons are again emitted from the surface of the substrate. The arc chamber 104 forms a predetermined space in a direction in which electrons are emitted from the cathode. The gas injection unit 105 is formed so as to inject gas and carrier gas used for doping the impurity in one direction, And an ion emitting portion 106 through which gas and ions are emitted are formed. A power supply unit is connected to the arc chamber 104 to accelerate electrons emitted from the cathode. A repeller 103 is provided on one side of the arc chamber facing the cathode 102. The repeller 103 functions to distribute ions in a limited space while pushing accelerated electrons emitted from the cathode, Or remain floating. Magnets 110a and 110b may be provided around the arc chamber 104. The magnet may be an electromagnet and accelerated along an electric field formed inside the arc chamber to allow electrons to move by a magnetic field. The rotational motion of electrons increases the ionization efficiency by increasing the collision probability of electrons and gas particles. Although not shown in the figure, an analyzing device for accelerating ions using an electric field and filtering ions having a specific kind and specific energy is provided below the ion emitting portion 106.

The repeller for an ion implanter of the present invention is characterized in that irregularities are formed on its surface. The irregularities formed on the surface of the repeller have an effect of preventing the deposition material from being peeled off and an effect of effectively pushing out electrons to improve the plasma efficiency.

The effect of preventing the deposition material from being peeled off is caused by an increase in the area of the surface of the re-pellet due to the unevenness formation, a cause of preventing cracks from being generated in the deposited film, a structure of concentric circulation of the projections and depressions, As shown in Fig. The effect of pushing electrons effectively to improve the plasma efficiency is due to the fact that the surface area of the repeller increases and the effect of pushing the electrons increases and the uniform electric field is formed in the protrusions and depressions of the concentric circles do.

2 shows a structure of a conventional repeller for an ion implanter. Referring to FIG. 2, a conventional repeller 103 for an ion implanter includes a reflecting portion 103a and a terminal portion 103b. The reflective portion 103a may be formed in a shape of a disk having a predetermined area and thickness to be opposed to the cathode. The terminal portion 103b is electrically connected to the reflecting portion and functions as a terminal to which a predetermined voltage can be applied and serves as a fixing portion for fixing the repeller in the arc chamber. As shown in the drawing, the surface of the reflector 103a of the conventional repeller for the ion implanter has a flat structure without a step.

FIG. 3 illustrates a structure of a repeller for an ion implanter according to an embodiment of the present invention. Referring to FIG. Referring to FIG. 3, the repeller 200 for an ion implanter according to an embodiment of the present invention includes a terminal portion 210 and a reflection portion 220. The surface of the reflective portion 220 facing the cathode is provided with irregularities. The concavities and convexities are formed concentrically on the surface of the circular reflection portion. The concave and convex portions 221a1, 221a2, and 221a3 are formed in the center of the circular portion, and concentric circular protrusions 221a1, 221a2, and 221a3 having a predetermined width are formed have. The first projecting portion 221a1 is formed at the center of the reflection portion, and the depression is formed in the inside of the first projecting portion 221a1 in a circular shape. The outer periphery of the first projecting portion 221a1 is provided with a concave- A second protrusion 221a2 is formed outside the depression 221a2, and a depression and a third protrusion 221a3 are formed on the outer periphery of the second protrusion 221a2. At this time, it is important that a depression is formed inside the first projection 221a1, which functions to concentrate the electrons emitted from the cathode and moving into the central region of the reflector. Since the depression inside the first projection 221a1 is in the central region of the reflection portion, the density of electrons emitted from the cathode is relatively high, and the first projection 221a1 around the depression in this region forms a concentric circular wall And serves to concentrate the electric field near the surface of the reflection portion to the central portion of the reflection portion. As such, when the electric field near the surface of the reflection part is concentrated at the center of the reflection part, electrons which have moved in the direction of the ripple can be concentrated to the center part of the arc chamber. In addition, since the protrusions and depressions are concentric circles that are symmetrical in four directions, the electron density in the plasma is formed symmetrically so that plasma uniformity can be improved and consequently, less power can be consumed to generate the same amount of ions.

When the ion source gas decomposed in the arc chamber is deposited on the surface of the reweller, the area of the deposition layer is increased due to the deposition in some regions, and a uniform film is formed as a whole. At this time, the separated form of the vapor-deposited film may be peeled off, or may be peeled off while a crack is generated in the uniform vapor-deposited film. The repeller for an ion implanter of the present invention effectively prevents all such peeling phenomenon.

4 shows a state in which deposits are deposited non-uniformly on the surface of a repeller for an ion implanter. Referring to (a) of FIG. 4, since the deposition material 300 is attached to a flat surface in the state where there is no concavity and convexity on the surface of the reflection part 103a, the bonding force between the deposition material and the surface of the reflection part is low and can be easily separated. 4 (b), the deposition material 300 is also formed at the connection portion between the depressed portion 221 and the protruding portions 221a1, 221a2, and 221a3 in the state where the surface of the reflective portion 220 is concave and convex, The bonding force of the surface is improved. This effect is due in part to the deposition of the deposition material over the projection with the reflector of the repeller standing vertically.

FIG. 5 shows a state in which the deposition material is deposited on the surface of the repeller for the ion implanter, forming a uniform film. 5 (a), when a uniform film is formed on the surface deposition material 300 having no unevenness, a crack is generated in the deposited film, so that a part of the deposition material 300 can be easily Peeled. In the state where the deposition material has a uniform film thickness, since the thickness of the deposition material is increased to some extent, cracks are likely to be generated in the deposition film due to the temperature change, and the joint between the deposition film and the reflection part surface may be destroyed In this case, a part of the deposited film is peeled off. However, as shown in Fig. 5 (B), in the structure in which the concave and convex portions are formed on the surface of the reflection portion, the occurrence of cracks is relatively small. In the structure in which the surface of the reflective portion is flat, the horizontal expansion of the evaporation film coexist in the entire area, so cracks occur easily. However, in the structure in which the concave and convex portions are formed concentrically on the surface of the reflective portion, the horizontal expansion of the evaporation film causes the depression and the flat portion And the film deposited on the wall surface of the projected portion functions as a buffer layer which alleviates this horizontal expansion to some extent. In addition, even when cracks are generated, the deposition film region that can be separated into cracks is supported by the walls of the protrusions, so that it can be easily peeled off.

According to an embodiment of the present invention, it is preferable that the plurality of depressions and protrusions formed on the surface of the repeller have a step difference of 0.05 to 1.0 mm. If the step difference is less than 0.05 mm, the effect of preventing the occurrence of cracks and the effect of preventing peeling due to the step formation is difficult to occur. If the step difference exceeds 1.0 mm, the electric field is excessively deformed by the step on the surface of the repeller, thereby deteriorating the function of pushing and concentrating electrons. The width ratio of the depressed portion to the protruding portion is preferably in the range of 1: 0.5 to 1: 2. The width ratio of the depressed portion to the protruded portion is less than 1: 0.5, or when the ratio is more than 1: 2, the area of the protruded portion or depressed portion is wide, so that the peeling of the deposited film occurring in the flat reflective portion may occur.

Various embodiments of the present invention and effects thereof will be described below using embodiments.

Example 1

A repeller having a radius of 12 mm, and a cathode having a radius of 10.85 mm were opposed to each other. At this time, depressions having a radius of 1 mm were formed at the center of the surface of the repeller, and concentric protrusions and depressions were formed sequentially from the depressions of the center portion (center depression-first depression-first depression- 2 protrusions-second depressions-third protrusions-third depressions, width of third depressions was 1 mm), and the step difference between the protrusions and the flat portions was 0.3 mm.

Example 2

An ion generator for an ion implanter was fabricated using a repeller and a cathode having the same radius as in Example 1. At this time, a protrusion having a radius of 1 mm is formed at the center of the surface of the repeller, and concentric depressions and protrusions having a width of 2 mm are sequentially formed from the protrusion of the center portion (center protrusion-first depression-first protrusion- The depression-second projection-third depression-third projection, the width of the third projection was 1 mm), and the step difference between the projection and the flat portion was 0.3 mm.

Example 3

An ion generator for an ion implanter was fabricated using a repeller and a cathode having the same radius as in Example 1. At this time, a depression having a radius of 1 mm was formed at the center of the surface of the repeller, a concentric protrusion having a width of 3 mm and a concentric depression having a width of 1 mm were successively formed from the depression at the center (center depression- The first depressed portion-the second projection-the second depression-the third projection), and the step difference between the projecting portion and the flat portion was 0.3 mm.

Example 4

An ion generator for an ion implanter was fabricated using a repeller and a cathode having the same radius as in Example 1. At this time, depressions having a radius of 1 mm were formed at the center of the surface of the repeller, and concentric protrusions having a width of 1 mm and concentric depressions having a width of 3 mm were successively formed from the depressions of the center portion (center depression- The first depressed portion-second projected portion-the second depressed portion-the third projected portion-the third depressed portion, the width of the third depressed portion was 2 mm), and the step difference between the projected portion and the flat portion was 0.3 mm.

Comparative Example 1

An ion generator for an ion implanter was fabricated using a repeller and a cathode having the same radius as in Example 1. At this time, the surface of the repeller was flat without a step.

Experimental Example 1

In an environment using BF ₃ as the ion source gas, the ion generating apparatuses of Examples 1 to 4 and Comparative Example 1 were operated to measure the run time at which a short circuit occurred in the apparatus. The time for generating the plasma was 10 minutes. The time for stopping the plasma was 5 minutes, and the process was performed by setting it to one cycle. After the occurrence of the short circuit, the operation of the ion generator was stopped.

The results measured in the ion generating apparatuses of Examples 1 to 4 and Comparative Example 1 are summarized in Table 1 below.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Number of short circuit cycles 440 times 429 times 421 times 414 times 385 times

As can be seen from the results of Experimental Example 1, it was confirmed that the Examples had less occurrence of short circuit than the Comparative Examples.

Experimental Example 2

Beam current (unit: mA) was measured in order to compare the ion generation efficiency while operating the ion generating devices of Examples 1 to 4 and Comparative Example 1. At this time, the arc chamber was 40 mm wide, 105 mm long, 40 mm high, 85 mm away from the repeller, argon was used, and the pressure was 2.5 torr. The voltage supplied to the arc chamber was supplied at 80V, the current supplied to the filament was 160A, and the voltage supplied to the cathode and repeller was 600V

The results measured in the ion generating devices of Examples 1 to 4 and Comparative Example 1 are summarized in Table 2 below.

Example 1 Example 2 Example 3 Example 4 Comparative Example 1 Beam current 23.0mA 20.1mA 23.1mA 22.8mA 22.6 mA

Referring to Table 2, it can be confirmed that the ion generation efficiency is relatively decreased in Example 2. [

Another feature of the ion generating device for an ion implanter of the present invention is that the cathode surface has a depressed shape. The depression shape has two functions. The first function increases the surface area of the cathode to increase the amount of electrons emitted. The second function changes the surface structure of the cathode to increase the density of the doping gas to be ionized. So that the locus of the electrons is concentrated in the region.

Effects according to the shape of the cathode will be described below with reference to FIGS. 6 to 10. FIG.

6 illustrates a structure of an electron emission cathode for an ion implanter according to an embodiment of the present invention. Referring to FIG. 6, the cathode 102 comprises a cathode side portion 102a that provides an internal space through which the filament may be installed, and a cathode front portion that provides a surface that emits electrons.

The cathode side portion 102a may have a tube shape having a predetermined length, and a cathode internal space 102g is formed therein, and a coupling portion 102e is formed therein.

The front surface of the cathode has a depressed surface, and includes a cathode front edge portion 102b, a cathode recessed inclined portion 102c, and a cathode recessed flat portion 102d. The cathode front edge portion 102b is formed in the outer peripheral region of the cathode front portion. The cathode front edge portion 102b has a predetermined width at the boundary of the outer peripheral region and provides a flat surface in the direction of the arc chamber, . The cathode front edge portion 102b has a flat surface to prevent the emission of electrons from being concentrated in one portion. For example, in the structure in which the cathode front edge portion is not formed and the cathode recess inclined portion is formed immediately, So that the emission of electrons can be concentrated only on the rim portion. The cathode recess inclined portion 102c forms an inclination in the center direction of the front face of the cathode so that the area of the cathode surface where the electron is emitted can be increased by this inclined face and the electron emission in the inclined face is made toward the center portion of the cathode So that electrons are accelerated to a region where the density of the doping gas is high. It is preferable that the cathode depression inclined portion 102c is formed concavely in the direction of the arc chamber. In this structure, it is possible to maximize the effect of electron movement in the direction of high density of the doping gas by controlling the electron emission position . The cathode recessed flat portion 102d is formed at the central portion of the cathode front portion and has a flat surface. The ratio of the width x of the cathode recessed inclined portion 102c to the radius y / 2 of the cathode recessed flat portion 102d The ionization efficiency can be improved. (Y / 2) of the cathode recessed flat portion to the width (x) of the cathode recessed inclined portion is 1: 0.3 to 1: 5 when the cathode front portion is circular and the cathode recessed inclined portion and the cathode recessed flat portion are concentric. Is preferable. If the ratio is less than 1: 0.3, the effect of controlling the direction of electron emission by the inclined portion is less likely to occur. If the ratio is more than 1: 5, the electron emission direction is excessively concentrated at the center. It is preferable that the recessed depth of the cathode recessed flat portion is 0.5 to 1.5 times the radius of the cathode recessed flat portion. If the cathode recessed flat portion is less than 0.5, it is difficult to increase the cathode area. If it exceeds 1.5, And the ionization efficiency is lowered.

Fig. 7 is a view for explaining the angle at which the hot electrons are emitted from the heated solid surface. Fig. Referring to FIG. 7, when the solid surface is heated, the electrons in the interior have an energy of at least a work function and are emitted to the outside. The direction in which the electrons are emitted is the most when the angle is 90 degrees from the surface. If the direction orthogonal to the surface is 0, the emission density of electrons is expected to decrease as the value of θ increases, which is considered to be a normal distribution.

FIG. 8 is a view for explaining the trajectory of an electron which is accelerated by an electric field and then spirally moves after a hot electron is emitted from a solid surface. FIG. 8 (A), when electrons are emitted from the surface of the cathode, electrons are mainly emitted in a direction orthogonal to the front surface of the cathode in the cathode-recessed flat portion, and in the central region of the front surface of the cathode in the cathode- Electrons are emitted. The emitted electrons move along the electric field and the magnetic field formed inside the arc chamber, and the average moving direction except for the helical motion becomes the direction of the repeller or the wall of the arc chamber. At this time, in the case where there is a cathode recess inclined portion as in the present invention, the density of electrons accelerated and moved can be concentrated in the central region of the cathode. However, when the front surface of the cathode is flat as shown in (B) of Fig. 8, such an effect can not be expected. Using FIG. 9 below, it is advantageous to concentrate the electrons emitted from the cathode into the central region of the cathode.

9 is a view for explaining the gas density distribution in the arc chamber. 9, a gas injection unit 105 and an ion emission unit 106 are formed in the arc chamber 104. A portion of the doping gas and the carrier gas injected into the gas injection unit are ionized and discharged to the ion emission unit . At this time, a pressure difference of gas is generated inside the arc chamber, and the density of the gas (pressure of the gas) in the region near the gas injection unit 105 becomes high. Therefore, when the amount of electrons accelerated to a region where the density of the gas is high is high, the ionization probability increases.

10 is a view for explaining acceleration trajectories of electrons in an ion generating device to which an electron emission cathode of the present invention is applied. Referring to FIG. 10, it can be seen that the density of electrons making a helical motion to the cathode central region is high (although the path of electrons in the figure is not shown as an exact path, So as to illustrate that there are many).

Hereinafter, embodiments of the present invention will be described in which the ionization efficiency is measured while varying the width of the cathode impregnated inclined portion and the width of the cathode impaled flat portion in the electron emitting cathode of the present invention.

Example 5

The cathode was fabricated by processing tungsten so that the cathode front portion had a radius of 10.85 mm, the cathode front edge was 0.99 mm, the cathode recess inclination had a width of 5 mm, and the cathode recess flatness had a radius of 4.86 mm. At this time, the depression depth of the cathode depression flat portion was 5 mm, and the curvature of the cathode depression portion was R5.

Example 6

The cathode was prepared in the same manner as in Example 5, except that the width of the cathode recess inclined portion was 2.5 mm, the radius of the cathode recess flat portion was 7.36 mm, and the curvature of the cathode recess inclined portion was R 6.25.

Example 7

The cathode was prepared in the same manner as in Example 5, except that the width of the cathode depression inclined portion was 7.5 mm, the radius of the cathode depression flat portion was 2.36 mm, and the curvature of the cathode depression inclined portion was R8.12.

Example 8

The cathode was prepared in the same manner as in Example 5 except that the width of the cathode depression inclined portion was 1.5 mm, the radius of the cathode depression flat portion was 8.36 mm, and the curvature of the cathode depression inclined portion was R3.75.

Example 9

The cathode was prepared in the same manner as in Example 5, except that the width of the cathode depression inclined portion was 8.5 mm, the radius of the cathode depression flat portion was 1.36 mm, and the curvature of the depression inclined portion of the cathode was R7.93.

Comparative Example 2

A cathode was prepared in the same manner as in Example 5 except that the cathode front portion was entirely flat.

Comparative Example 3

A dimple was formed on the front surface of the cathode so that the area of the front surface of the cathode was increased by about 25% compared with that of Comparative Example 2 (in the case of Example 5, the area of the front surface of the cathode was increased by 25% 2, the cathode was prepared.

Experimental Example 3

Beam current (unit: mA) was measured in order to compare the generation efficiency of ions by operating the cathodes of Examples 5 to 9 and Comparative Examples 2 and 3. At this time, the arc chamber was 40 mm wide, 105 mm long, 40 mm high, 85 mm away from the repeller, argon was used, and the pressure was 2.5 torr. The voltage supplied to the arc chamber was supplied at 80V, the current supplied to the filament was 160A, and the voltage supplied to the cathode and repeller was 600V

The beam currents measured in Examples 5 to 9 and Comparative Example 2 and Comparative Example 3 are summarized in Table 3.

Example 5 Example 6 Example 7 Example 8 Example 9 Comparative Example 2 Comparative Example 3 Beam current 23.0mA 20.1mA 19.8mA 18.2 mA 17.9mA 17.4 mA 16.7mA

Referring to Table 3, it can be seen that the ion generation efficiency of the embodiments is increased compared with the comparative examples.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, . Therefore, the embodiments described in the present invention are not intended to limit the scope of the present invention but to limit the scope of the present invention. The scope of protection of the present invention should be construed according to the claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

100: ion generating device 101: filament
102: cathode 102a: cathode side
102b: cathode front edge portion 102c: cathode sink recessed portion
102d: cathode recessed flat part 102e: fastening part
103: Repeller 103a: Reflecting portion
103b: Terminal portion 102g: Cathode inner space
104: arc chamber 105: gas injection part
106: ion emitting portion 110a, 110b: magnet
200: Repeller 210: Terminal portion
220: reflective part 221: depression
221a1: first projection 221a2: second projection
221a3: Third protrusion 300: Deposition material

Claims (5)

A repeller installed in an arc chamber of an ion generating device for an ion implanter for doping an impurity into a film for controlling an operating characteristic of a semiconductor device,
A reflecting portion provided opposite to the cathode of the ion generating device and having a circular surface; And
And a terminal portion extending from the reflective portion and to which a predetermined voltage is applied,
The projections and depressions are formed in the reflective portion and the projections and depressions of the reflective portion are composed of a plurality of concentric depressions and protrusions, and the plurality of depressions and protrusions have stepped portions of 0.05 to 1.0 mm, Width ratio is in the range of 1: 0.5 to 1: 2. delete delete delete An ion generating device comprising a repeller for an ion implanter according to claim 1.

Images