KR101679018B1 - Readout integrated circuit comprising testing circuit of vacumm status and resistance deviation and test apparatus comprising thereof - Google Patents

Readout integrated circuit comprising testing circuit of vacumm status and resistance deviation and test apparatus comprising thereof Download PDF

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KR101679018B1
KR101679018B1 KR1020150114797A KR20150114797A KR101679018B1 KR 101679018 B1 KR101679018 B1 KR 101679018B1 KR 1020150114797 A KR1020150114797 A KR 1020150114797A KR 20150114797 A KR20150114797 A KR 20150114797A KR 101679018 B1 KR101679018 B1 KR 101679018B1
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resistance value
vacuum state
bolometer sensor
dummy cells
cells
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KR1020150114797A
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Korean (ko)
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엄태환
안미숙
윤재석
정병석
백종빈
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(주)유우일렉트로닉스
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0023—Measuring currents or voltages from sources with high internal resistance by means of measuring circuits with high input impedance, e.g. OP-amplifiers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0207—Bolometers

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  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)

Abstract

A readout integrated circuit having a test circuit according to an embodiment of the present invention is a readout integrated circuit for reading out a resistance value deviation between active cells included in a vacuum state and a bolometer sensor inside a bolometer sensor, And a switch module for sequentially switching dummy cells and outputting a resistance value varying by a bias power source as a voltage, wherein a change in a resistance value of the dummy cells includes a resistance value deviation between the active cells and a vacuum state inside the bolometer sensor Lt; / RTI >

Figure R1020150114797

Description

[0001] READ INTEGRATED CIRCUIT COMPRISING TESTING CIRCUIT OF VACUMM STATUS AND RESISTANCE DEVIATION AND TEST APPARATUS COMPRISING THEREOF [0002]

The present application relates to a device for testing the vacuum state inside a bolometer sensor and the resistance variation between active cells.

In general, the infrared sensor module is composed of a micro-bolometer and a read out integrated circuit (ROIC). When the infrared energy enters the bolometer, the resistance of the bolometer changes and the changed resistance value is converted into an electrical signal To detect infrared rays.

The above-described infrared sensor module monolithically fabricates a bolometer using MEMS technology on a readout integrated circuit. To detect infrared radiation, a bolometer sensor integrated with a readout integrated circuit must be packaged in a vacuum state. The above-mentioned bolometer consists of active cells responsive to infrared rays and dummy cells for reducing resistance variation.

In particular, it is ideal that the aforementioned active cells are fabricated with the same resistance value. However, due to the nature of the manufacturing process, it is difficult to manufacture with the same resistance value, so there is a resistance value deviation between the active cells. It is very important to test the deviation of the resistance of the bolometer to accurately analyze the response of the infrared signal output through the infrared reading integrated circuit.

In order to accurately detect an infrared signal, it is necessary to test whether the vacuum state inside the bolometer sensor is good because the inside of the bolometer sensor including the active cells is required to maintain a constant vacuum state.

Related technology is disclosed, for example, in Korean Patent Laid-Open Publication No. 2009-0030768 (" IR signal detection circuit and detection method using a bolometer ", published on March 25, 2009).

Korean Patent Publication No. 2009-0030768 ('Infrared Signal Detection Circuit and Detection Method Using Bolometer', published on March 25, 2009)

According to one embodiment of the present invention, there is provided a readout integrated circuit having a test circuit capable of testing a resistance value deviation between active cells and a vacuum state inside a bolometer sensor at a wafer level, and a test apparatus including the readout integrated circuit.

According to one embodiment of the present invention, in a readout integrated circuit for reading a vacuum state inside a bolometer sensor and a resistance value deviation between active cells included in the bolometer sensor, when the bias power is applied, the dummy cells are sequentially And a switch module for outputting a resistance value varying by the bias power source as a voltage, wherein a change in a resistance value of the dummy cells includes at least a resistance value deviation between the active cells and a vacuum state inside the bolometer sensor A readout integrated circuit used to determine one is provided.

According to another aspect of the present invention, there is provided a test apparatus for reading a vacuum state inside a bolometer sensor and a resistance value deviation between active cells included in the bolometer sensor, comprising: a bias power source; A switch module for sequentially switching the dummy cells when the bias power is applied and outputting a variable resistance variable by the bias power source; And a determination module for determining at least one of a resistance value deviation between the active cells and a vacuum state inside the bolometer sensor based on a change in resistance value of the dummy cells.

According to the embodiment of the present invention, by using the change in the resistance value of the dummy cells variable by the bias power source, the resistance value deviation between the active cells and the vacuum state inside the bolometer sensor can be tested at the wafer level.

In addition, according to an embodiment of the present invention, by using the resistance value change of a plurality of dummy cells, even when some dummy cells are damaged, the resistance value deviation of the active cell can be estimated using the remaining dummy cells, The internal vacuum can be tested.

1 is a configuration diagram of a readout integrated circuit having a test circuit according to an embodiment of the present invention and a test apparatus including the readout integrated circuit.
2 is a diagram illustrating a bolometer sensor including dummy cells according to an embodiment of the present invention.
3 to 4 are diagrams showing switching timing charts according to an embodiment of the present invention.
5 is a diagram illustrating a resistance value deviation of dummy cells according to an embodiment of the present invention.
FIG. 6 is a diagram for explaining a method for determining a vacuum state inside the bolometer sensor based on a resistance value change amount of one dummy cell.
FIG. 7 is a diagram showing a resistance value change amount according to a vacuum state according to an embodiment of the present invention. FIG.
8 is a view showing a thermal conductivity according to a vacuum state according to an embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified into various other forms, and the scope of the present invention is not limited to the embodiments described below. The shape and the size of the elements in the drawings may be exaggerated for clarity and the same elements are denoted by the same reference numerals in the drawings.

1 is a configuration diagram of a readout integrated circuit having a test circuit according to an embodiment of the present invention and a test apparatus including the readout integrated circuit. FIG. 2 is a view showing a bolometer sensor including dummy cells according to an embodiment of the present invention.

1, a test apparatus 100 according to an embodiment of the present invention includes a bias power source Vbias , a reference resistance 110 having a fixed value, a readout integrated circuit 120, and a determination module 130 ). The readout integrated circuit 120 described above includes a switch module 122, a switching control module 123, a voltage follower 124, a sample holder 125, a multiplexer 126, an analog-to-digital converter 127, And a bolometer sensor (see FIGS. 2 and 200) including dummy cells 121 may be monolithically fabricated on a readout integrated circuit 120 using a MEMS technique .

First, a read out integrated circuit (ROIC) 120 is a detection circuit that converts the resistance values of a plurality of active cells and dummy cells that change with temperature to an electrical signal. Since the specific configuration of the above-described readout integrated circuit is generally known, a detailed description of a general readout integrated circuit is omitted for simplification of the invention.

On the other hand, the read integrated circuit 120 according to an embodiment of the present invention may further include a test circuit. The test circuit described above includes a switch module 122, a switching control module 123, a voltage follower 124, a sample holder 125, a multiplexer 126, an analog-to-digital converter 127 and a frame memory 140 . Although the frame memory 140 is shown as being included in the test circuit in FIG. 1, it may be disposed outside the test circuit in some embodiments.

Meanwhile, a plurality of dummy cells 121 may be included as shown in FIG. 1, and FIG. 1 exemplarily shows 40 dummy cells from R1 to R40. The dummy cells 121 described above are cells generated to reduce the resistance value deviation of the active cells in the wafer oxidation process. The dummy cells 121 are similar to the active cells but are not used for infrared signal detection. According to one embodiment of the present invention, these dummy cells 121 can be used to determine the resistance value deviation between active cells and the vacuum state inside the bolometer sensor (see 200 in FIG. 2).

One end of each of the dummy cells 121, R1 to R40 is connected in series with one end of the reference resistor 110 having a fixed value through the pad P1, and the other end of each of the dummy cells 121, R1 to R40, Can be grounded. In addition, the other end of the reference resistor 110 having a fixed value may be connected to the bias power supply Vbias. The arrangement structure of the dummy cells 121, R1 to R40 will be described with reference to Fig.

FIG. 2 is a diagram illustrating a bolometer sensor 200 including dummy cells according to an embodiment of the present invention.

2 (a), the dummy cells 121 are disposed on one side of active cells (AC) 210, or as shown in FIG. 2 (b) May be disposed on either side of the active cells 210 or may be disposed to wrap around the active cells 210, as shown in Figure 2 (c).

Referring again to FIG. 1, the switch module 122 may sequentially switch the dummy cells 121, R 1 to R 40 under the control of the switching control module 123. This will be described with reference to Figs. 3 to 4. Fig.

That is, as shown in Figs. 1 and 3, each of the switches Q1 to Q40 of the switch module 122 is sequentially switched. That is, the first switch Q1 is turned on for a predetermined time, the first switch Q1 is turned off, and the second switch Q2 is turned on for a predetermined time. In this manner, it is possible to switch to the 40th switch Q40. In FIG. 1, the predetermined time is 15 ms. However, it should be noted that the present invention is not limited to the above-described numerical values.

On the other hand, FIG. 4 shows the operation by the sample holder 125 and the analog-to-digital converter 127 during a period (15 ms) during which the first switch Q1 is turned on.

As shown in FIG. 4, the sample holder 125 and the analog-to-digital converter 127, which will be described later, can operate 150 times for 15 ms during which the first switch Q1 is turned on, and the analog- 127 may be sequentially stored in a specific address of the frame memory 140. [

Referring again to FIG. 1, the voltage follower 124 receives a variable resistance value of the dummy cells 121 (R1 to R40) as a voltage, and can transmit the input voltage to the sample holder 125. The voltage follower 124 described above has a large input impedance and a low output impedance and can stably transmit the voltage applied to each of the dummy cells 121, R1 to R40 to the sample holder 125. [

The sample holder 125 may sample the output of the voltage follower 124 and deliver the output of the sampled voltage follower 124 to the multiplexer 126. The output of the sampled voltage follower 124 delivered to the multiplexer 126 is transferred to the determination module 130 via the pad P2 or is converted to a digital value by the analog to digital converter 127 and then stored in the frame memory 140). The data stored in the frame memory 140 may then be read by the determination module 130 via the pad P3.

Lastly, the determination module 130 determines a resistance value variation between the active cells based on the resistance value change of the dummy cells 121, R1 to R40, which are varied by the bias power source Vbias, At least one of the vacuum state can be determined.

The above-described determination module 130 may be implemented in various ways, for example, by a processor, program instructions executed by the processor, software modules, microcode, computer program products, logic circuits, application specific integrated circuits, firmware, .

Hereinafter, a method of determining a resistance value deviation between active cells and a vacuum state inside a bolometer sensor according to an embodiment of the present invention will be described with reference to FIGS. 5 to 7. FIG.

5 is a diagram showing a resistance value deviation of dummy cells according to an embodiment of the present invention.

5, when the bias power source Vbias is applied, the resistance value of each of the dummy cells R1 to R40 tends to decrease with time, and the determination module 130 determines that the bias voltage Vbias is applied to the bias power source Vbias The resistance value deviations DELTA R1 to DELTA R40 of the dummy cells 121, R1 to R40 varying by the resistance values of the active cells can be estimated.

The reason why the resistance value deviations DELTA R1 to DELTA R40 of the dummy cells 121, R1 to R40 can be estimated by the resistance value deviation between the active cells is that the dummy cells 121, 0.0 > R40 < / RTI > have similar temperature characteristics to active cells.

On the other hand, the inside of the bolometer sensor 200 is in a vacuum state, and this vacuum state can be related to the resistance value change amount.

Referring to FIG. 6, the first dummy cell R1 is referred to as a reference. When the bias power source Vbias is applied, the resistance value of the first dummy cell R1 varies with time It can be judged that the vacuum state of the readout integrated circuit 120 is good when the change amount DELTA R1 of the resistance value at the point of time after the initial resistance value and the initial resistance value is equal to or larger than a predetermined value.

That is, when the bias power is applied, the resistance value of the first dummy cell Rl can be changed according to the following equation (1).

[Equation 1]

Figure 112015078796209-pat00001

Where R is the resistance of the first dummy cell R1 measured at a certain point in time,? Is the temperature coefficient of resistance (TCR), V is the bias voltage, R0 is the initial resistance of the first dummy cell R1 Value, G is the thermal conductivity, τ EFF is the effective thermal time constant, and t is the time.

More specifically, the determination module 130 determines the final resistance of the last time point Te after a specific time from the initial resistance value Ri of the initial time point Ti of the resistance value change curve 601 of the first dummy cell Rl When the resistance value change amount DELTA R1 obtained by subtracting the value Re is equal to or larger than a preset value, it can be determined that the vacuum state inside the bolometer sensor 200 is good. The predetermined resistance value change amount may be a value that varies depending on the design specification, for example, a value between 20 kΩ and 150 kΩ. The initial point of time Ti described above may be a value of 0, but is not limited thereto.

7 shows the relationship between the resistance value change amount and the internal pressure of the bolometer sensor. The X-axis in FIG. 7 is closer to the atmospheric pressure as the pressure P inside the bolometer sensor goes to the right. State is high, and the Y-axis is the resistance value change amount.

As shown in FIG. 7, the vacuum state inside the bolometer sensor and the resistance value change amount are in inverse proportion, and when the resistance value change amount is equal to or larger than a predetermined value, it can be judged that the vacuum state is good.

8 is a diagram showing a vacuum state and a thermal conductivity in the bolometer sensor according to an embodiment of the present invention. The X-axis approaches the atmospheric pressure toward the right as the pressure P inside the bolometer sensor, The vacuum state is high, and the Y-axis is the thermal conductivity.

The thermal conductivity is affected by the air and solid inside the bolometer sensor (see 200 in FIG. 2). When the inside of the bolometer sensor (see 200 in FIG. 2) is in a vacuum state, if the air is sparse inside the bolometer sensor 200 It is understood that the thermal conductivity is lower than that in the case of not being in a vacuum state.

Therefore, according to another embodiment of the present invention, the determination module 130 may determine the vacuum state inside the bolometer sensor 200 based on the obtained thermal conductivity after calculating the thermal conductivity according to the following equation (1) . Equation (2) summarizes Equation (1) with respect to thermal conductivity (G).

&Quot; (2) "

Figure 112015078796209-pat00002

Where R is the resistance value of the dummy cell measured at a certain point in time, and τ EFF is the resistance of the dummy cell measured at an arbitrary point in time. Here, G is the thermal conductivity, α is the temperature coefficient of the TCR, V is the bias voltage, Effective thermal time constant, t is time. The initial resistance value R0 and the temperature coefficient? Are values determined when the bolometer sensor is manufactured, the resistance value R is a value measured at a certain point in time, and? EFF is a constant.

More specifically, the determination module 130 can determine that the vacuum state inside the bolometer sensor 200 is good when the thermal conductivity G determined according to the above-described equation (2) is equal to or lower than a preset thermal conductivity. The predetermined thermal conductivity is a value that can be varied according to the design specification.

However, the above-described predetermined thermal conductivity (G) of 10 - Considering that 7 very small extent, if they meet the following conditions even when the thermal conductivity (G) obtained from the equation (2) is greater than in the predetermined thermal conductivity It can be determined that the vacuum state inside the bolometer sensor 200 is good.

That is, when the thermal conductivity G determined by the formula (2) exceeds the predetermined thermal conductivity, the determination module 130 determines that the bolometer sensor It can be determined that the vacuum state inside the vacuum chamber 200 is good.

As described above, according to the embodiment of the present invention, by using the change in the resistance value of the dummy cells variable by the bias power source, it is possible to judge the resistance value deviation between the active cells at the wafer level and the vacuum state inside the bolometer sensor .

In addition, according to an embodiment of the present invention, by using the resistance value change of a plurality of dummy cells, even when some dummy cells are damaged, the resistance value deviation of the active cell can be estimated using the remaining dummy cells, It is possible to judge the internal vacuum state.

The present invention is not limited to the above-described embodiments and the accompanying drawings. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It will be self-evident.

100: Test device 110: Reference resistance having a fixed value
120: reading integrated circuit (test circuit) 121: dummy cell
122: Switch module 123: Switching control module
124: Voltage follower 125: Sample holder
126: Multiplexer 127: Analog-to-digital converter
130: Judgment module 140: Frame memory
Vbias: bias power

Claims (14)

A readout integrated circuit for reading a vacuum state inside a bolometer sensor and a resistance value deviation between active cells included in the bolometer sensor,
And a switch module for sequentially switching the dummy cells and outputting a voltage having a variable value by the bias power source when the bias power is applied,
Wherein the change in the resistance value of the dummy cells is used to determine at least one of a resistance value deviation between the active cells and a vacuum state inside the bolometer sensor,
When the thermal conductivity obtained based on the resistance value change of the dummy cells is less than a preset value, it is determined that the vacuum state inside the bolometer sensor is good,
The thermal conductivity is expressed by the following Equation 1:
Figure 112016088847118-pat00013

R is the resistance value of the dummy cell measured at an arbitrary point in time, and τ is the resistance of the dummy cell measured at a certain point in time. EFF is the effective thermal time constant, and t is the time.
The method according to claim 1,
The resistance value deviation between the dummy cells
And a resistance value deviation between the active cells.
The method according to claim 1,
When the amount of change in the resistance value of the dummy cells is equal to or greater than a predetermined value,
The vacuum state of the bolometer sensor is judged to be good.
delete delete The method according to claim 1,
Even when the thermal conductivity obtained based on the change in the resistance value of the dummy cells exceeds a preset value,
Wherein the vacuum state inside the bolometer sensor is judged to be good when N times the predetermined value (where N is a positive number of 9 or less).
The method according to claim 1,
The readout integrated circuit includes:
A voltage follower receiving a voltage output from the switch module;
A sample holder for sampling the output of the voltage follower;
An analog-to-digital converter for converting the output of the sample holder into a digital value; And
And a frame memory for storing an output of the analog-to-digital converter.
A test apparatus for reading a vacuum state inside a bolometer sensor and a resistance value deviation between active cells included in the bolometer sensor,
Bias power;
A switch module for sequentially switching dummy cells and outputting a variable resistance variable by the bias power source when the bias power is applied; And
And a determination module for determining at least one of a resistance value deviation between the active cells and a vacuum state inside the bolometer sensor based on a resistance value change of the dummy cells,
Wherein the determination module determines that the vacuum state inside the bolometer sensor is good when the thermal conductivity obtained based on the resistance value change of the dummy cells is less than a preset value,
The thermal conductivity is expressed by the following Equation 1:
Figure 112016088847118-pat00014

R is the resistance value of the dummy cell measured at an arbitrary point in time, and τ is the resistance of the dummy cell measured at a certain point in time. EFF is the effective thermal time constant, and t is the time.
9. The method of claim 8,
Wherein the determination module comprises:
And a resistance value deviation between the dummy cells is estimated as a resistance value deviation between the active cells.
9. The method of claim 8,
Wherein the determination module comprises:
And determines that the vacuum state inside the bolometer sensor is good when the change amount of the resistance value of the dummy cells is equal to or greater than a preset value.
delete delete 9. The method of claim 8,
Wherein the determination module comprises:
Even if the thermal conductivity obtained based on the change in the resistance value of the dummy cells exceeds a predetermined value, if the vacuum state inside the bolometer sensor is N times (N is positive or negative) A test device that is judged to be good.
9. The method of claim 8,
The test apparatus includes:
A voltage follower receiving a voltage output from the switch module;
A sample holder for sampling the output of the voltage follower;
An analog-to-digital converter for converting the output of the sample holder into a digital value; And
And a frame memory for storing an output of the analog-to-digital converter.

KR1020150114797A 2015-08-13 2015-08-13 Readout integrated circuit comprising testing circuit of vacumm status and resistance deviation and test apparatus comprising thereof KR101679018B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108267688A (en) * 2018-01-15 2018-07-10 温州大学苍南研究院 A kind of new method for measuring miniature circuit breaker thermal time constant

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003240740A (en) * 2002-02-18 2003-08-27 Matsushita Electric Ind Co Ltd Electron device, system, and method for judging degree of vacuum
JP2008268155A (en) 2007-04-25 2008-11-06 Mitsubishi Electric Corp Thermal type infrared solid-state imaging element
KR101383918B1 (en) 2013-03-14 2014-04-08 한국과학기술원 Microbolometer type wide range vaccum sensor and ir sensor including the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003240740A (en) * 2002-02-18 2003-08-27 Matsushita Electric Ind Co Ltd Electron device, system, and method for judging degree of vacuum
JP2008268155A (en) 2007-04-25 2008-11-06 Mitsubishi Electric Corp Thermal type infrared solid-state imaging element
KR101383918B1 (en) 2013-03-14 2014-04-08 한국과학기술원 Microbolometer type wide range vaccum sensor and ir sensor including the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108267688A (en) * 2018-01-15 2018-07-10 温州大学苍南研究院 A kind of new method for measuring miniature circuit breaker thermal time constant

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