KR101670274B1 - Window-type solar cells and method of fabrication the same - Google Patents

Window-type solar cells and method of fabrication the same Download PDF

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KR101670274B1
KR101670274B1 KR1020150067844A KR20150067844A KR101670274B1 KR 101670274 B1 KR101670274 B1 KR 101670274B1 KR 1020150067844 A KR1020150067844 A KR 1020150067844A KR 20150067844 A KR20150067844 A KR 20150067844A KR 101670274 B1 KR101670274 B1 KR 101670274B1
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forming
solar cell
forming process
window
unit
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KR1020150067844A
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Korean (ko)
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신명훈
이정훈
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한국항공대학교산학협력단
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S20/00—Supporting structures for PV modules
    • H02S20/20—Supporting structures directly fixed to an immovable object
    • H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00—Integration of renewable energy sources in buildings
    • Y02B10/10—Photovoltaic [PV]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/542—Dye sensitized solar cells

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Structural Engineering (AREA)
  • Civil Engineering (AREA)
  • Architecture (AREA)
  • Hybrid Cells (AREA)
  • Photovoltaic Devices (AREA)

Abstract

Disclosed are a window-type solar cell and a manufacturing method thereof. According to the present invention, the window-type solar cell includes: a photovoltaic power generation unit including one or more sub modules in which a unit-cell is formed in multiple groups; a window frame unit forming an edge area supporting the photovoltaic power generation unit; and a bypass diode array formed by integrating one or more bypass diodes within the window frame. One of the sub modules can be connected to one or more among the bypass diodes in parallel.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solar cell,

The present invention relates to a window-type solar cell and a manufacturing method thereof.

The unit cell structure of a general dye-sensitized solar cell is based on a transparent substrate and a conductive transparent electrode formed on the surface of the transparent substrate, and a dye is adsorbed on the surface of the transparent conductive electrode on one side corresponding to the first electrode And a catalyst thin film electrode is formed on the other conductive transparent electrode corresponding to the second electrode. The transition metal oxide, for example, TiO2 porous electrode and catalyst thin film electrode are filled with an electrolyte.

In this technical field, even if a part of the unit cell structure of the dye-sensitized solar cell is shielded by external shading, it is required to develop a technique for minimizing current matching loss and increasing the overall power generation efficiency have.

1. Window integrated solar cell module (Patent Application No. 10-2011-0035150) 2. Window-type solar cell power supply (Window type power supply by photovoltaic solar panel) (Utility Model No. 20-2005-0020193)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a power generation region by using a dye-sensitized solar cell (DSC) The present invention provides a window-type solar cell and a method of manufacturing the same that minimize the current matching loss and increase the overall power generation efficiency even when a part of the portion is covered by the outside shade.

In addition, the present invention provides a window-type solar cell and a method of manufacturing the same, in which a bypass diode and a unit solar cell can be simultaneously manufactured in a manufacturing process.

However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above object, a window-type solar cell according to an embodiment of the present invention is a window-type solar cell comprising: a solar power generating unit for forming a window including at least one sub-module in which unit solar cells ; A window frame part forming a rim area for supporting the solar power generation part; And a bypass diode array formed by integrating at least one bypass diode in the edge region, wherein one of the submodules can be connected in parallel with at least one of the bypass diodes .

At this time, the forward bias current of each bypass diode and the photo current of the submodule connected to the bypass diode may have the same direction.

The area of the bypass diode connected to each submodule may be equal to or larger than the area of the unit solar cell included in the submodule.

In addition, the solar power generating unit may be formed by combining one or more of unit solar cells of the same size and shape in series connection and parallel connection.

In addition, one of the at least one sub-module may have a structure in which a plurality of unit solar cells are connected in series in any one of a left-right direction and a vertical direction.

In addition, the at least one sub-module may have a structure in which a plurality of sub-modules are connected in series or in parallel.

In addition, each bypass diode may include a Schottky-diode formed between two TCO substrates corresponding to a transparent conducting oxide (TCO) for forming an FTO pattern or an ITO pattern. have.

Each bypass diode may be formed by sequentially depositing an intrinsic ZnO (zinc-oxide) semiconductor material and Au or Pt on one of the FTO patterns to form a Schottky diode, And may have a structure in which an electrolyte is used to electrically connect to the FTO pattern on the other side.

According to another aspect of the present invention, there is provided a method of manufacturing a window-type solar cell, the method comprising the steps of: (a) Forming a working electrode (W / E) by sequentially performing a process of forming an electrode (TiO2) and a process of adsorbing dye (Dye) to the photoelectrode (TiO2) formed; (b) sequentially forming an FTO pattern forming process, an iZnO film forming process, and a Pt electrode forming process to form a counter electrode (C / E); And (c) the working electrode (W / E) manufactured in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) And a step of adhering the lower plate and the upper plate facing each other and injecting an electrolyte therebetween.

In the step (a), the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the sub module of the photovoltaic power generation unit, and in the step (b), the iZnO film forming step And may be performed corresponding to the bypass diode included in the bypass diode array.

According to another aspect of the present invention, there is provided a method of manufacturing a window-type solar cell, including the steps of: (a) forming an FTO pattern; Forming a working electrode (W / E) by sequentially performing a step of forming a photoelectrode (TiO2), a dye (Dye) adsorption process to a photo electrode formed, an iZnO film forming process and a Pt electrode forming process sequentially; (b) forming a counter electrode (C / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye (Dye) adsorption process, and a Pt electrode forming process; And (c) the working electrode (W / E) manufactured in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) And a step of adhering the lower plate and the upper plate facing each other and injecting the electrolyte therebetween.

In the step (a), the photoelectrode forming process and the dye adsorption process are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit, and the iZnO film forming process is included in the bypass diode array The step of forming the photoelectrode and the step of adsorbing dye may be performed corresponding to the unit solar cells included in the submodule of the solar power generation unit.

The window type solar cell and the manufacturing method thereof according to the embodiment of the present invention can provide the effect of installing the window type solar cell on the outer wall of the building where the shaded area frequently occurs.

That is, according to the present invention, the power generation region is manufactured using the dye-sensitized solar cell and the bypass diode is integrated in the non-power generation region, so that even if a portion of the power generation portion of the window is covered by the external shade, Can be minimized and the overall power generation efficiency can be enhanced.

Further, the present invention can provide an effect of maximizing the efficiency of the bypass function of the bypass diode by setting the area of the bypass diode connected to each submodule to be equal to or larger than the area of the unit solar cell in the submodule have.

In addition, the present invention provides an easiness of manufacturing easiness to make a bypass diode and a unit solar cell simultaneously in the manufacturing process.

1 is a view showing an external structure of a window-type solar cell according to an embodiment of the present invention.
FIG. 2 is a view showing the structure of a dye-sensitized solar cell generally used to help understand a window-shaped solar cell according to an embodiment of the present invention.
FIG. 3 is a view illustrating a structure of a solar cell according to an exemplary embodiment of the present invention, illustrating unit solar cells constituting a solar power generator and various power generation area structures according to the arrangement of submodules, which are a plurality of sets of unit solar cells, Fig.
4 is a view showing various installation schemes through a connection structure with a submodule of a solar power generation unit for a bypass diode array constituting a window type solar cell of FIG.
5 is a view for explaining a method of integrating bypass diodes constituting a bypass diode array among the window-type solar cell devices of FIG.
FIGS. 6 and 7 are diagrams for explaining simulation results of power generation efficiency reduction when shading occurs in a window-type solar cell according to an embodiment of the present invention.
8 to 15 are views for explaining a specific process corresponding to a method of manufacturing a window-type solar cell according to an embodiment of the present invention. FIG. 1 is a view showing a configuration of a redundant drive device using a first drive device 10 and a second drive device 20 using a conventional fail-safe valve.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.

Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.

Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.

Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.

The present invention relates to a window-type solar cell and a manufacturing method thereof, and more particularly, to a method of manufacturing a window-type solar cell and a method of manufacturing the same, in which a bypass diode, which compensates for reduction in efficiency when shadows occur, Type solar cell and a method of manufacturing the same.

1 is a view showing an external structure of a window-type solar cell 100 according to an embodiment of the present invention. 1, a window-type solar cell 100 includes a solar power generation unit 120, which is a photovoltaic area for generating electricity at the center and securing visibility, and an edge (a border area or an outer area) And a bypass diode array 111 formed by integrating a bypass diode 111 in a border region of a window frame unit 130 such as a rectangular frame, bypass diode array 110).

2 is a view showing the structure of a dye-sensitized solar cell generally used to help understand the window-type solar cell 100 according to an embodiment of the present invention. 2, the general structure of a dye-sensitized solar cell includes a transparent conductive oxide (TCO) film for forming an FTO (SnO 2 : F) pattern or an ITO (SnO 2 : In) One of the glass substrates of the sheet is used as a front electrode, and a porous mixed absorber (TiO 2 + dye) is attached to the inside thereof. The other is used as a counter electrode and coated with a platinum (Pt) catalyst.

The structure in which the electrolyte is filled with the barrier between the two front electrodes and the counter electrode forms a unit cell of the dye-sensitized solar cell. At this time, the cells may be electrically connected in series or in parallel using metal electrodes between the partitions of the independent cells.

FIG. 3 is a schematic view showing a unit solar cell 121 and a plurality of unit solar cells 121 constituting a solar cell unit 120 in a window-type solar cell 100 according to an embodiment of the present invention. The sub-module 121u, and the sub-module 121u. Referring to FIG. 3, the power generation region of the solar power generation unit 120 may be formed by a series connection or a parallel connection of the unit solar cells 121 having the same size and shape. In addition, several unit solar cells 121 may be combined to form one sub module 121u (one sub module 121u = N x unit solar cell, N is a natural number of 2 or more).

3A and 3B show that the power generating region of the solar power generating unit 120 is formed in the form of one submodule 121u so that the unit solar cell 121 is divided into left and right ) Connected in series.

3C is divided into a plurality of sub modules 121u, and each sub module 121u is divided into M serial units or K parallel units (M and K are two or more natural numbers and N, M, and K are the same or different from each other ).

In Fig. 3 (d), submodules 121u forming a structure in which unit solar cells 121 are connected in series as shown in Fig. 3a are connected in series to M in the left and right first, and each of these submodules 121u is vertically connected FIG. 3E shows a structure in which the sub modules 121u forming a structure in which the unit solar cells 121 in the up and down direction are connected in series as shown in FIG. 3B are connected in parallel on the left and right sides. (121u) are connected in series upwards and downward by K pieces. In another embodiment of the present invention, though not shown, the upper and lower and left and right directions of the parallel connection in the configurations of FIGS. 3D and 3E may be changed.

4 shows various installation schemes through a connection structure with the submodule 121u of the solar power generation unit 120 with respect to the bypass diode array 110 constituting the window type solar cell 100 of FIG. FIG. Referring to FIG. 4, it can be seen that the bypass diode 111 is integrated in the window frame unit 130 corresponding to the non-power generation region. The sub-module 121i may have a structure in which one or more bypass diodes 111 are connected in parallel with each other.

At this time, the forward bias current of the bypass diode 111 and the photo current of the sub-module 121u may be in the same direction.

The area of the bypass diode 111 connected to each submodule 121u is equal to or larger than the area of the unit solar cell 121 in the submodule 121u, It is possible to maximize the efficiency of the bypass function for the energy emission accumulated through the light source 121.

This is because if the area of the bypass diode 111 is smaller than the area of the unit solar cell 121 constituting the window type submodule 121u, the efficiency of the bypass function of the bypass diode 111 is reduced Because.

5 is a view for explaining a method of integrating the bypass diodes 111 constituting the bypass diode array 110 of the archetype solar cell apparatus 100 of FIG. 5, a Schottky diode (not shown) is formed between upper and lower plate TCO substrates corresponding to a transparent conducting oxide (TCO) for forming an FTO pattern (SnO2: F) 111a or an ITO pattern a bypass diode 111 can be manufactured by forming a schottky diode.

The bypass diode 111 used in the present invention is formed by stacking intrinsic ZnO (zinc-oxide) semiconductor material 111d, Au 111b, or Pt (111b) on one FTO pattern 111a as shown in FIG. A Schottky diode is formed by successively depositing a metal having a large band gap such as an FTO pattern 111a and a conductive paste (ex: Ag-paste) And the like. In the embodiment shown in FIG. 5A, the constituent denoted by reference numeral 111c is not limited to Pt, and Au, Pd, Ag, or the like may be used. 5 (a) and 5 (b), the structure denoted by reference numeral 111d is not limited to the application of iZnO (intrinsic ZnO), and nZnO (n-type ZnO) have. Further, the configuration in which the reference numeral 111d is referred to, it may be used instead of the TiO 2 ZnO.

5 (b), when the Pt 111c electrode is used, an FTO pattern 111a other than Pt is formed on the electrolyte 111e by using the electrolyte 111e without using the conductive paste, The bypass diode 111 can be fabricated to be electrically connected through the through-hole.

FIGS. 6 and 7 are diagrams for explaining simulation results of power generation efficiency reduction when shading occurs in a window-type solar cell 100 according to an embodiment of the present invention. 6, a part of the sub module 121u constituting the solar power generation unit 120 among the window-type solar cells 100 is covered by a shadow corresponding to one of the shaded areas, 7, when the bypass diode 111 forms a structure connected to the sub-module 121u, the power generation loss caused by the photovoltaic generation unit 120 through the current and power change graphs, Can be reduced.

Hereinafter, with reference to FIGS. 8 to 15, a specific process corresponding to the method of manufacturing the window-type solar cell 100 according to the embodiment of the present invention will be described.

Figs. 8 and 9 show a manufacturing method for the dye-sensitized solar cell of Fig. 8 and 9, an FTO pattern forming process (a1), a photo electrode pattern forming process (a2), a dye (Dye) adsorption process (FIG. a3) can be sequentially performed.

Next, an FTO pattern forming step (b-1) and a catalyst forming step (b-2) may be performed in order to form a counter electrode (C / E).

Thereafter, a merging step (c-1) and an electrolyte injecting step (c-2) between the working electrode (W / E) and the counter electrode (C / E) can be sequentially performed for cementation and electrolyte injection.

In the following, a method of manufacturing a window-type solar cell 100 according to an embodiment of the present invention, which is different from the conventional method of manufacturing a dye-sensitized solar cell of the related art shown in FIGS. 8 and 9, A manufacturing method for a window-type solar cell 100 based on a Z-type module according to the present invention and a manufacturing method for a window-type solar cell 100 based on a W-type module according to FIG. 13 to FIG. Let's look at it in detail.

According to the manufacturing method of the window-type solar cell 100 according to the embodiment of the present invention, the window-type solar cell 100 according to the embodiment of the present invention is characterized in that, as described later, The diode 111 and the unit solar cell 121 can be easily manufactured at the same time.

10 is a view showing a process of forming a working electrode (W / E) in a window-type solar cell 100 based on a Z-type module. 10, in the process of forming the working electrode W / E, five process steps (FIG. 10A) for forming the FTO pattern 111a are performed along the horizontal direction, a process for forming the third and fourth FTO patterns 111a A step of forming a photoelectrode (TiO2) on the top of the photoresist (FIG. 10B), and a process of adsorbing dye on the top of the photoresist (TiO2) (FIG. 10C).

10, the photoelectrode formation process (FIG. 10A) and the dye adsorption process (FIG. 10C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the working electrode W / . ≪ / RTI >

Next, FIG. 11 is a view showing a process of forming a counter electrode (C / E) in a Z-type module-based window-type solar cell 100. Referring to FIG. 11, in the process of forming the counter electrode C / E, five steps of forming the FTO pattern 111a in the horizontal direction (FIG. 11A) (FIG. 11B) forming the iZnO layer 111d on the lower layer (the lower part of FIG. 11, and the upper part of FIG. 11, The Pt electrode 111c is formed on the lower portion of the second and third FTO patterns 111a divided by the openings (the lower portion of FIG. 11, and the upper portion of FIG. 11, (Fig. 11C) are sequentially performed.

11, the iZnO film forming process (FIG. 11B) may be performed corresponding to the bypass diode included in the bypass diode array.

12 is a view showing a final adhesion process of a window-type solar cell 100 based on a Z-type module. 12, the counter electrode (C / E) fabricated in FIG. 11 is used as the upper electrode and the lower electrode (W / (Upper plate in Fig. 12), and an electrolyte (electrolyte) 111e can be injected thereinto.

Accordingly, two Z-type unit solar cells 121u-z are formed at the center, and a second type schottky-diode (hereinafter, referred to as a Schottky diode) having the laminated structure as shown in FIG. 111-t2, and a schottky-diode 111-t1 having a stacked structure as shown in FIG. 5A may be formed on the right side.

12, a unit body composed of two partition walls 110g formed on both sides of the Ag-paste 110f as a conductive paste is inserted between the Z-type unit solar cells 121u-z And two partition walls 110g may be inserted into both sides of a second type Schottky diode 111-t2 having a laminated structure as shown in FIG. 5B.

In order to form a schottky-diode 111-t1 having a stack structure opposite to that of FIG. 5A, a metal having a large band gap, such as Au 111b, (W / E) and the counter electrode (C / E).

Next, FIG. 13 is a view showing a process of forming a working electrode (W / E) in a window-type solar cell 100 based on a W-type module. Referring to FIG. 13, in the process of forming the working electrode W / E, five FTO pattern formation processes (FIG. 13A) are performed along the horizontal direction, and a third FTO pattern (Fig. 13B) for forming a photoelectrode (TiO2) on the right side, a step (Fig. 13C) for adsorbing the dye (Dye) A process of forming the Pt electrode 111c on the upper left side of the third and fourth upper portions of the five FTO patterns 111a and the upper portion of the iZnO 111d (FIG. 13D) 13e can be performed.

13B) and the dye adsorption process (FIG. 13C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the working electrode W / E, . ≪ / RTI > Further, the iZnO film forming process (FIG. 13D) can be performed corresponding to the bypass diode included in the bypass diode array.

Next, FIG. 14 is a view showing a process of forming a counter electrode (C / E) in a window-type solar cell 100 based on a W-type module. Referring to FIG. 14, in the process of forming the counter electrode C / E, five process steps (FIG. 14A) for forming the FTO pattern 111a in the horizontal direction, (Fig. 14B) for forming the photoelectrode (TiO2) on the right side, a dye (Dye) adsorption process (Fig. 14C) for forming the lower electrode formed with the photoelectrode (TiO2) The step of forming the Pt electrode 111c for the Pt electrode 111c (FIG. 14D) may be performed sequentially.

14B) and the dye adsorption process (FIG. 14C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the counter electrode (C / E) . ≪ / RTI >

FIG. 15 is a view showing a final adhesion process of a window-type solar cell 100 based on a W-type module. 15, the counter electrode (C / E) manufactured in FIG. 14 is used as the upper and lower plates (W / E) (Upper plate in Fig. 15), and an electrolyte (electrolyte) 111e can be injected thereinto.

Accordingly, three W-type unit solar cells 121u-w are formed in the center, and a second type schottky-diode 111-w having a stacked structure as shown in FIG. and a first type Schottky diode 111-t1 having a stacked structure as shown in FIG. 5A may be formed on the right side.

15, a unit body made of a partition wall 110g, which is a conductive paste, is inserted between the W-type unit solar cells 121u-w and the outside, and a second type having a laminated structure as shown in FIG. Two partition walls 110g can also be inserted into both sides of the schottky-diode 111-t2.

5A, a metal having a large band gap such as Au 111b is formed on the working electrode W (W) to form a schottky-diode 111-t1 having a stacked structure. / E) and the counter electrode (C / E).

As described above, according to the manufacturing method according to the embodiment of the present invention, since the bypass diode and the unit solar cell can be manufactured together, the productivity and economical efficiency in manufacturing the solar cell can be improved.

It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.

The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

100: Window type solar cell
110: Bypass Diode Array
111: Bypass diode
113: metal electrode
120: Solar power generation part
121: unit solar cell (unit-cell)
121u: Submodule
130: window frame part

Claims (12)

A photovoltaic power generating unit for forming a window including at least one submodule in which a plurality of unit solar cells are formed;
A window frame part forming a rim area for supporting the solar power generation part; And
And a bypass diode array in which at least one bypass diode is integrated in the edge region,
One of the submodules is connected in parallel with at least one of the bypass diodes,
For each bypass diode,
A Schottky diode formed between two TCO substrates corresponding to a transparent conducting oxide (TCO) for forming an FTO pattern or an ITO pattern,
A Schottky diode is formed by successively depositing an intrinsic ZnO (zinc-oxide) semiconductor material and Au or Pt on one FTO pattern, and then a conductive paste or electrolyte is used to form another FTO pattern Wherein the solar cell has a structure for electrically connecting the solar cell with the solar cell. The method according to claim 1,
Wherein a forward bias current of each bypass diode and a photo current of a submodule connected to the bypass diode have the same direction. The method according to claim 1,
Wherein an area of the bypass diode connected to each submodule is equal to or larger than an area of the unit solar cell included in the submodule. The method according to claim 1,
Wherein the solar power generating unit is formed by combining at least one of a series connection and a parallel connection unit solar cells of the same size and shape. The method according to claim 1,
Wherein one of the at least one sub-module has a structure in which a plurality of unit solar cells are connected in series in either one of a left-right direction and a vertical direction. The method according to claim 1,
Wherein at least one of the at least one sub-module is formed as a plurality of solar cells connected in series or in parallel. delete delete A method of manufacturing a window-type solar cell according to claim 1,
(a) forming a working electrode (W / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, and a dye adsorption process for the formed photoelectrode (TiO2);
(b) sequentially forming an FTO pattern forming process, an iZnO film forming process, and a Pt electrode forming process to form a counter electrode (C / E); and
(c) the working electrode (W / E) produced in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) , Attaching the lower plate and the upper plate facing each other, and injecting an electrolyte therebetween
The method comprising the steps of: 10. The method of claim 9,
In the step (a), the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the submodule of the solar power generating part,
Wherein the iZnO film forming process is performed corresponding to the bypass diode included in the bypass diode array in the step (b). A method of manufacturing a window-type solar cell according to claim 1,
(a) forming a working electrode (W / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye adsorption process for a photo electrode to be formed, an iZnO film forming process and a Pt electrode forming process ;
(b) forming a counter electrode (C / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye (Dye) adsorption process, and a Pt electrode forming process; And
(c) the working electrode (W / E) produced in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) , The lower plate and the upper plate facing each other, and injecting the electrolyte therebetween
The method comprising the steps of: 12. The method of claim 11,
In the step (a), the photoelectrode forming process and the dye adsorption process are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit, and the iZnO film forming process includes a bypass process Lt; RTI ID = 0.0 > diode,
Wherein the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit in the step (b).
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