KR101670274B1 - Window-type solar cells and method of fabrication the same - Google Patents
Window-type solar cells and method of fabrication the same Download PDFInfo
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- KR101670274B1 KR101670274B1 KR1020150067844A KR20150067844A KR101670274B1 KR 101670274 B1 KR101670274 B1 KR 101670274B1 KR 1020150067844 A KR1020150067844 A KR 1020150067844A KR 20150067844 A KR20150067844 A KR 20150067844A KR 101670274 B1 KR101670274 B1 KR 101670274B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000010248 power generation Methods 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims description 79
- 230000008569 process Effects 0.000 claims description 64
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- 239000003792 electrolyte Substances 0.000 claims description 16
- 238000001179 sorption measurement Methods 0.000 claims description 15
- 229960001296 zinc oxide Drugs 0.000 claims description 9
- 239000011787 zinc oxide Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 15
- 239000010408 film Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 238000005192 partition Methods 0.000 description 5
- 239000003054 catalyst Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S20/00—Supporting structures for PV modules
- H02S20/20—Supporting structures directly fixed to an immovable object
- H02S20/22—Supporting structures directly fixed to an immovable object specially adapted for buildings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/204—Light-sensitive devices comprising an oxide semiconductor electrode comprising zinc oxides, e.g. ZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/044—PV modules or arrays of single PV cells including bypass diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/07—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the Schottky type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Structural Engineering (AREA)
- Civil Engineering (AREA)
- Architecture (AREA)
- Hybrid Cells (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
The present invention relates to a window-type solar cell and a manufacturing method thereof.
The unit cell structure of a general dye-sensitized solar cell is based on a transparent substrate and a conductive transparent electrode formed on the surface of the transparent substrate, and a dye is adsorbed on the surface of the transparent conductive electrode on one side corresponding to the first electrode And a catalyst thin film electrode is formed on the other conductive transparent electrode corresponding to the second electrode. The transition metal oxide, for example, TiO2 porous electrode and catalyst thin film electrode are filled with an electrolyte.
In this technical field, even if a part of the unit cell structure of the dye-sensitized solar cell is shielded by external shading, it is required to develop a technique for minimizing current matching loss and increasing the overall power generation efficiency have.
SUMMARY OF THE INVENTION The present invention has been made in order to solve the above problems, and it is an object of the present invention to provide a method of manufacturing a power generation region by using a dye-sensitized solar cell (DSC) The present invention provides a window-type solar cell and a method of manufacturing the same that minimize the current matching loss and increase the overall power generation efficiency even when a part of the portion is covered by the outside shade.
In addition, the present invention provides a window-type solar cell and a method of manufacturing the same, in which a bypass diode and a unit solar cell can be simultaneously manufactured in a manufacturing process.
However, the objects of the present invention are not limited to the above-mentioned objects, and other objects not mentioned can be clearly understood by those skilled in the art from the following description.
In order to achieve the above object, a window-type solar cell according to an embodiment of the present invention is a window-type solar cell comprising: a solar power generating unit for forming a window including at least one sub-module in which unit solar cells ; A window frame part forming a rim area for supporting the solar power generation part; And a bypass diode array formed by integrating at least one bypass diode in the edge region, wherein one of the submodules can be connected in parallel with at least one of the bypass diodes .
At this time, the forward bias current of each bypass diode and the photo current of the submodule connected to the bypass diode may have the same direction.
The area of the bypass diode connected to each submodule may be equal to or larger than the area of the unit solar cell included in the submodule.
In addition, the solar power generating unit may be formed by combining one or more of unit solar cells of the same size and shape in series connection and parallel connection.
In addition, one of the at least one sub-module may have a structure in which a plurality of unit solar cells are connected in series in any one of a left-right direction and a vertical direction.
In addition, the at least one sub-module may have a structure in which a plurality of sub-modules are connected in series or in parallel.
In addition, each bypass diode may include a Schottky-diode formed between two TCO substrates corresponding to a transparent conducting oxide (TCO) for forming an FTO pattern or an ITO pattern. have.
Each bypass diode may be formed by sequentially depositing an intrinsic ZnO (zinc-oxide) semiconductor material and Au or Pt on one of the FTO patterns to form a Schottky diode, And may have a structure in which an electrolyte is used to electrically connect to the FTO pattern on the other side.
According to another aspect of the present invention, there is provided a method of manufacturing a window-type solar cell, the method comprising the steps of: (a) Forming a working electrode (W / E) by sequentially performing a process of forming an electrode (TiO2) and a process of adsorbing dye (Dye) to the photoelectrode (TiO2) formed; (b) sequentially forming an FTO pattern forming process, an iZnO film forming process, and a Pt electrode forming process to form a counter electrode (C / E); And (c) the working electrode (W / E) manufactured in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) And a step of adhering the lower plate and the upper plate facing each other and injecting an electrolyte therebetween.
In the step (a), the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the sub module of the photovoltaic power generation unit, and in the step (b), the iZnO film forming step And may be performed corresponding to the bypass diode included in the bypass diode array.
According to another aspect of the present invention, there is provided a method of manufacturing a window-type solar cell, including the steps of: (a) forming an FTO pattern; Forming a working electrode (W / E) by sequentially performing a step of forming a photoelectrode (TiO2), a dye (Dye) adsorption process to a photo electrode formed, an iZnO film forming process and a Pt electrode forming process sequentially; (b) forming a counter electrode (C / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye (Dye) adsorption process, and a Pt electrode forming process; And (c) the working electrode (W / E) manufactured in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) And a step of adhering the lower plate and the upper plate facing each other and injecting the electrolyte therebetween.
In the step (a), the photoelectrode forming process and the dye adsorption process are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit, and the iZnO film forming process is included in the bypass diode array The step of forming the photoelectrode and the step of adsorbing dye may be performed corresponding to the unit solar cells included in the submodule of the solar power generation unit.
The window type solar cell and the manufacturing method thereof according to the embodiment of the present invention can provide the effect of installing the window type solar cell on the outer wall of the building where the shaded area frequently occurs.
That is, according to the present invention, the power generation region is manufactured using the dye-sensitized solar cell and the bypass diode is integrated in the non-power generation region, so that even if a portion of the power generation portion of the window is covered by the external shade, Can be minimized and the overall power generation efficiency can be enhanced.
Further, the present invention can provide an effect of maximizing the efficiency of the bypass function of the bypass diode by setting the area of the bypass diode connected to each submodule to be equal to or larger than the area of the unit solar cell in the submodule have.
In addition, the present invention provides an easiness of manufacturing easiness to make a bypass diode and a unit solar cell simultaneously in the manufacturing process.
1 is a view showing an external structure of a window-type solar cell according to an embodiment of the present invention.
FIG. 2 is a view showing the structure of a dye-sensitized solar cell generally used to help understand a window-shaped solar cell according to an embodiment of the present invention.
FIG. 3 is a view illustrating a structure of a solar cell according to an exemplary embodiment of the present invention, illustrating unit solar cells constituting a solar power generator and various power generation area structures according to the arrangement of submodules, which are a plurality of sets of unit solar cells, Fig.
4 is a view showing various installation schemes through a connection structure with a submodule of a solar power generation unit for a bypass diode array constituting a window type solar cell of FIG.
5 is a view for explaining a method of integrating bypass diodes constituting a bypass diode array among the window-type solar cell devices of FIG.
FIGS. 6 and 7 are diagrams for explaining simulation results of power generation efficiency reduction when shading occurs in a window-type solar cell according to an embodiment of the present invention.
8 to 15 are views for explaining a specific process corresponding to a method of manufacturing a window-type solar cell according to an embodiment of the present invention. FIG. 1 is a view showing a configuration of a redundant drive device using a
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. It should be understood, however, that the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In the drawings, the same reference numbers are used throughout the specification to refer to the same or like parts.
Throughout this specification, when a part is referred to as being "connected" to another part, it is not limited to a case where it is "directly connected" but also includes the case where it is "electrically connected" do.
Throughout this specification, when a member is " on " another member, it includes not only when the member is in contact with the other member, but also when there is another member between the two members.
Throughout this specification, when an element is referred to as "including " an element, it is understood that the element may include other elements as well, without departing from the other elements unless specifically stated otherwise. The terms "about "," substantially ", etc. used to the extent that they are used throughout the specification are intended to be taken to mean the approximation of the manufacturing and material tolerances inherent in the stated sense, Accurate or absolute numbers are used to help prevent unauthorized exploitation by unauthorized intruders of the referenced disclosure. The word " step (or step) "or" step "used to the extent that it is used throughout the specification does not mean" step for.
The present invention relates to a window-type solar cell and a manufacturing method thereof, and more particularly, to a method of manufacturing a window-type solar cell and a method of manufacturing the same, in which a bypass diode, which compensates for reduction in efficiency when shadows occur, Type solar cell and a method of manufacturing the same.
1 is a view showing an external structure of a window-type
2 is a view showing the structure of a dye-sensitized solar cell generally used to help understand the window-type
The structure in which the electrolyte is filled with the barrier between the two front electrodes and the counter electrode forms a unit cell of the dye-sensitized solar cell. At this time, the cells may be electrically connected in series or in parallel using metal electrodes between the partitions of the independent cells.
FIG. 3 is a schematic view showing a unit
3A and 3B show that the power generating region of the solar
3C is divided into a plurality of
In Fig. 3 (d),
4 shows various installation schemes through a connection structure with the submodule 121u of the solar
At this time, the forward bias current of the
The area of the
This is because if the area of the
5 is a view for explaining a method of integrating the
The
5 (b), when the
FIGS. 6 and 7 are diagrams for explaining simulation results of power generation efficiency reduction when shading occurs in a window-type
Hereinafter, with reference to FIGS. 8 to 15, a specific process corresponding to the method of manufacturing the window-type
Figs. 8 and 9 show a manufacturing method for the dye-sensitized solar cell of Fig. 8 and 9, an FTO pattern forming process (a1), a photo electrode pattern forming process (a2), a dye (Dye) adsorption process (FIG. a3) can be sequentially performed.
Next, an FTO pattern forming step (b-1) and a catalyst forming step (b-2) may be performed in order to form a counter electrode (C / E).
Thereafter, a merging step (c-1) and an electrolyte injecting step (c-2) between the working electrode (W / E) and the counter electrode (C / E) can be sequentially performed for cementation and electrolyte injection.
In the following, a method of manufacturing a window-type
According to the manufacturing method of the window-type
10 is a view showing a process of forming a working electrode (W / E) in a window-type
10, the photoelectrode formation process (FIG. 10A) and the dye adsorption process (FIG. 10C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the working electrode W / . ≪ / RTI >
Next, FIG. 11 is a view showing a process of forming a counter electrode (C / E) in a Z-type module-based window-type
11, the iZnO film forming process (FIG. 11B) may be performed corresponding to the bypass diode included in the bypass diode array.
12 is a view showing a final adhesion process of a window-type
Accordingly, two Z-type unit
12, a unit body composed of two
In order to form a schottky-diode 111-t1 having a stack structure opposite to that of FIG. 5A, a metal having a large band gap, such as
Next, FIG. 13 is a view showing a process of forming a working electrode (W / E) in a window-type
13B) and the dye adsorption process (FIG. 13C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the working electrode W / E, . ≪ / RTI > Further, the iZnO film forming process (FIG. 13D) can be performed corresponding to the bypass diode included in the bypass diode array.
Next, FIG. 14 is a view showing a process of forming a counter electrode (C / E) in a window-type
14B) and the dye adsorption process (FIG. 14C) correspond to the unit solar cells included in the submodule of the photovoltaic power generation unit in the process of forming the counter electrode (C / E) . ≪ / RTI >
FIG. 15 is a view showing a final adhesion process of a window-type
Accordingly, three W-type unit
15, a unit body made of a
5A, a metal having a large band gap such as
As described above, according to the manufacturing method according to the embodiment of the present invention, since the bypass diode and the unit solar cell can be manufactured together, the productivity and economical efficiency in manufacturing the solar cell can be improved.
It will be understood by those of ordinary skill in the art that the foregoing description of the embodiments is for illustrative purposes and that those skilled in the art can easily modify the invention without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. For example, each component described as a single entity may be distributed and implemented, and components described as being distributed may also be implemented in a combined form.
The scope of the present invention is defined by the appended claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.
100: Window type solar cell
110: Bypass Diode Array
111: Bypass diode
113: metal electrode
120: Solar power generation part
121: unit solar cell (unit-cell)
121u: Submodule
130: window frame part
Claims (12)
A window frame part forming a rim area for supporting the solar power generation part; And
And a bypass diode array in which at least one bypass diode is integrated in the edge region,
One of the submodules is connected in parallel with at least one of the bypass diodes,
For each bypass diode,
A Schottky diode formed between two TCO substrates corresponding to a transparent conducting oxide (TCO) for forming an FTO pattern or an ITO pattern,
A Schottky diode is formed by successively depositing an intrinsic ZnO (zinc-oxide) semiconductor material and Au or Pt on one FTO pattern, and then a conductive paste or electrolyte is used to form another FTO pattern Wherein the solar cell has a structure for electrically connecting the solar cell with the solar cell.
Wherein a forward bias current of each bypass diode and a photo current of a submodule connected to the bypass diode have the same direction.
Wherein an area of the bypass diode connected to each submodule is equal to or larger than an area of the unit solar cell included in the submodule.
Wherein the solar power generating unit is formed by combining at least one of a series connection and a parallel connection unit solar cells of the same size and shape.
Wherein one of the at least one sub-module has a structure in which a plurality of unit solar cells are connected in series in either one of a left-right direction and a vertical direction.
Wherein at least one of the at least one sub-module is formed as a plurality of solar cells connected in series or in parallel.
(a) forming a working electrode (W / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, and a dye adsorption process for the formed photoelectrode (TiO2);
(b) sequentially forming an FTO pattern forming process, an iZnO film forming process, and a Pt electrode forming process to form a counter electrode (C / E); and
(c) the working electrode (W / E) produced in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) , Attaching the lower plate and the upper plate facing each other, and injecting an electrolyte therebetween
The method comprising the steps of:
In the step (a), the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the submodule of the solar power generating part,
Wherein the iZnO film forming process is performed corresponding to the bypass diode included in the bypass diode array in the step (b).
(a) forming a working electrode (W / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye adsorption process for a photo electrode to be formed, an iZnO film forming process and a Pt electrode forming process ;
(b) forming a counter electrode (C / E) by sequentially performing an FTO pattern forming process, a photoelectrode (TiO2) forming process, a dye (Dye) adsorption process, and a Pt electrode forming process; And
(c) the working electrode (W / E) produced in the step (a) is one of an upper plate and a lower plate, and the counter electrode (C / E) manufactured in the step (b) , The lower plate and the upper plate facing each other, and injecting the electrolyte therebetween
The method comprising the steps of:
In the step (a), the photoelectrode forming process and the dye adsorption process are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit, and the iZnO film forming process includes a bypass process Lt; RTI ID = 0.0 > diode,
Wherein the photoelectrode forming step and the dye adsorption step are performed corresponding to the unit solar cells included in the submodule of the photovoltaic power generation unit in the step (b).
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20200108584A (en) * | 2019-03-11 | 2020-09-21 | 한국항공대학교산학협력단 | Apparatus and device for generating solar power based on functional waveguide structure and solar window including the same |
KR102679258B1 (en) * | 2024-03-13 | 2024-06-27 | 주식회사 바인딩 | Connecting assembly for solar windows |
Citations (5)
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KR20110034694A (en) * | 2008-08-08 | 2011-04-05 | 교세미 가부시키가이샤 | Daylighting solar battery module |
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