KR101659092B1 - Recording medium and method of manufacturing the same, and data wrighting/reading apparatus therefore - Google Patents

Abstract

The present invention relates to a recording medium capable of storing a large amount of data and capable of performing data recording and reading at a high speed, a method of manufacturing the same, and a data recording and reading apparatus using the same. The data recording medium according to the present invention has a laminated structure of a lower electrode layer, a ferroelectric layer and an upper electrode layer. The data recording apparatus selectively polarizes the ferroelectric layer of the recording medium, and the data reading apparatus includes switching means that is turned on / off by the polarized electric field. The switching means basically consists of a read head having a transistor structure.

Description

[0001] The present invention relates to a data recording and reading apparatus,

The present invention relates to an information recording medium, and more particularly, to a recording medium capable of storing a large amount of data and capable of performing data recording and reading at a high speed, a method of manufacturing the same, and a data recording and reading apparatus using the same.

A recording material thin film layer composed of a metal thin film or an organic thin film is formed on a substrate having a disk shape or a card shape and a high energy beam focused on a minute light spot having a submicron order diameter is irradiated thereto, And accumulation of information signals is already well known.

Particularly, in a medium using a magnetooptical material thin film or a phase change material thin film as a recording layer, signal rewriting can be facilitated, and active research and development have been made.

However, since such a conventional recording medium is structured such that recording and reading of data is performed by a high energy beam from the outside, there is a limit to increase the data storage capacity, and there is also a problem that an expensive data recording and reading device Is required. In addition, since the data recording and reading are performed while moving the head along the track where the data is stored, it is impossible to increase the recording and reading of data beyond a predetermined speed.

Accordingly, it is an object of the present invention to provide a recording medium capable of dramatically increasing data storage capacity over the same area.

Another object of the present invention is to provide a recording medium having a low manufacturing cost.

It is another object of the present invention to provide a manufacturing method for manufacturing the recording medium.

It is still another object of the present invention to provide a data recording and reading apparatus capable of recording and reading data to and from the recording medium.

According to a first aspect of the present invention, there is provided a recording medium comprising a body having a rectangular shape and a recording region provided in the body, wherein the recording region has a plurality of memory cells and a plurality of contacts Wherein the memory cell is provided with a ferroelectric layer, and the contact pad is provided for writing data to the memory cell.

According to a second aspect of the present invention, there is provided a recording medium comprising: a body having a rectangular shape; a recording region provided in the body; a plurality of lower electrodes extending in one direction on the recording region; A plurality of upper electrodes disposed on the upper side of the lower electrode and extending in a direction orthogonal to the lower electrode, and a plurality of lower electrodes disposed in a region where the lower electrode and the upper electrode are orthogonal to each other, And a plurality of contact pads electrically coupled to the lower electrode or the upper electrode, wherein the lower electrode and the upper electrode and the ferroelectric layer therebetween constitute a memory cell.

According to a third aspect of the present invention, there is provided a recording medium comprising: a body having a rectangular shape; and a plurality of lower electrodes formed on the recording region, the recording electrodes being provided in the body, A plurality of upper electrodes provided on the upper side of the ferroelectric layer and extending in a direction orthogonal to the lower electrodes, and a plurality of lower electrodes electrically connected to the lower and upper electrodes, A plurality of contact pads are provided, and the lower electrode and the upper electrode and the ferroelectric layer therebetween constitute a memory cell.

And a protective layer is further provided on the upper electrode layer.

The ferroelectric layer may include at least one of a ferroelectric inorganic material, a ferroelectric organic material, a mixture of a ferroelectric inorganic material and an organic material, and a mixture of a ferroelectric inorganic material and a ferroelectric organic material.

And the ferroelectric layer includes a mixture of a ferroelectric inorganic material and a metal.

And the metal is iron (Fe).

The contact pad is formed on one side and the other side along the extension direction of the upper electrode or the lower electrode, and the lower electrode or the upper electrode is alternately coupled with the contact pad on one side and the other side.

The contact pad is formed on one side and the other side along the extension direction of the upper electrode or the lower electrode, the lower electrode or the upper electrode is coupled with one side contact pad, the other half of the lower electrode or the upper electrode is contacted with the other side Pad. ≪ / RTI >

And the recording area is made of a material including paper or paper.

And the recording area is made of a material containing an organic material.

And the recording area is formed of a silicon substrate.

A method of manufacturing a recording medium according to a fourth aspect of the present invention includes the steps of preparing a body, preparing a substrate, simultaneously forming a plurality of lower electrode layers extending in one direction on the substrate, Forming a ferroelectric layer on the lower electrode layer, forming a plurality of upper electrode layers extending in a direction orthogonal to the lower electrode layer on the ferroelectric layer, a lead wire and a contact pad at the same time, And a step of joining to the body.

The substrate is made of paper, and the lower electrode layer is formed by a vacuum deposition method.

The substrate is an organic material, and the lower electrode layer is formed by at least one of a screen printing method and a spin coating method.

The forming of the ferroelectric layer may include forming a mixed solution of a ferroelectric inorganic material and a ferroelectric organic material, and forming a ferroelectric layer by a screen printing method using the mixed solution.

The forming of the ferroelectric layer may include forming a mixed solution of a ferroelectric inorganic material and an organic material, and forming a ferroelectric layer by a screen printing method using the mixed solution.

And filling the insulating material between the laminated structure of the ferroelectric layer and the upper electrode layer and the laminated structure of the other ferroelectric layer and the upper electrode layer.

And forming a protective layer on the entire surface of the recording medium.

And the ferroelectric layer is formed only in the intersection region of the lower electrode layer and the upper electrode layer.

The ferroelectric substance is formed on the entire upper surface of the lower electrode layer.

According to a fifth aspect of the present invention, there is provided a data recording and reading apparatus comprising a rectangular body and a recording region provided on an upper side of the body, wherein the recording region includes a plurality of memory cells constituted of ferroelectric materials, A data recording and reading apparatus for writing and reading data to and from a recording medium on which a plurality of contact pads to be coupled are formed, the data recording and reading apparatus comprising a main body and a cover for opening and closing an upper side of the main body, A read head provided at a position corresponding to the memory cell on an upper surface of the mount portion, and a read head provided at a position corresponding to the contact pad, Or a plurality of data pads for supplying a ground voltage are provided.

The read head includes a semiconductor substrate, source and drain regions formed on the substrate, a channel region formed between the source and drain regions, source and drain electrodes formed on the source and drain regions, And a protective layer formed on the upper side of the drain electrode.

A data recording and reading apparatus according to a sixth aspect of the present invention includes:

And a plurality of contact pads electrically coupled to the memory cells, wherein the plurality of memory cells are formed of ferroelectric material and the plurality of contact pads are electrically coupled to the memory cells, The data recording and reading apparatus comprising: an input port for inputting a recording medium into an inside of a main body and a main body; a recording medium installed in the inside of the input port, And a data pad, wherein the read head is installed at a position corresponding to the memory cell, and the data pad is installed to be in electrical contact with the contact pad. The data recording / And a buffer layer made of a conductive material is further provided on the channel region.

In addition, the number of the read heads is two or more for one memory cell.

The read head may include a substrate, source and drain electrodes formed on the substrate, and an organic semiconductor layer formed on the substrate and on the source and drain electrodes.

And a buffer layer made of a conductive material is further provided on the organic semiconductor layer.

The substrate is also made of paper.

The substrate may be formed of an organic material.

The recording medium according to the present invention having the above-described structure constitutes a memory cell composed of a lower electrode layer, a ferroelectric layer and an upper electrode layer on a substrate, so that a large number of memory cells can be formed per unit area.

Further, since the data recording and reading apparatus according to the present invention is provided with a read head for reading data from each memory cell, it is possible to simultaneously read data from a large number of memory cells, thereby greatly increasing the data access speed .

1 to 3 are diagrams for explaining the basic concept of the present invention.
4 is a cross-sectional view schematically showing the structure of a read head and a recording medium according to the present invention.
5 is a cross-sectional view showing another configuration example of the read head in Fig.
6 is a perspective view showing an outer shape of a recording medium according to the present invention.
7 is a plan view showing a structure of a memory cell array formed on the recording area 52 in FIG.
8 is a plan view showing another structural example of a memory cell array formed on the recording area 52 in FIG.
9 is a cross-sectional view taken along the line A-A 'in Fig. 7;
FIGS. 10 to 14 are cross-sectional views illustrating a structure of a recording medium according to another embodiment of the present invention, taken along line A-A 'in FIG. 7. FIG.
15 is a cross-sectional view schematically showing the structure of a data recording and reading apparatus according to an embodiment of the present invention;
16 schematically shows a structure of a data recording and reading apparatus according to another embodiment of the present invention;

Hereinafter, embodiments according to the present invention will be described with reference to the drawings. However, the embodiments described below represent one preferred embodiment of the present invention, and examples of such embodiments are not intended to limit the scope of the present invention. The present invention can be carried out in various ways without departing from the technical spirit thereof.

First, the basic concept of the present invention will be described with reference to Figs. 1 to 4. Fig.

1 shows a general MOS transistor. As is well known, a MOS transistor has a gate electrode 1, a drain electrode 2, and a source electrode 3. A channel region exists between the drain electrode 2 and the source electrode 3, and a gate electrode is disposed above the channel region. In this structure, a conductive channel is selectively formed in the channel region due to the influence of the electric field due to the voltage applied to the gate electrode 1, so that a current flow is selectively generated between the drain electrode 2 and the source electrode 3.

On the other hand, in Fig. 2, the capacitor 4 is connected between the gate electrode 1 and the ground with respect to the transistor shown in Fig. The data electrode 5 is coupled to the connection node between the gate electrode 1 and the capacitor 4. [

2, when the capacitor 4 is charged through the data electrode 5, even if the data voltage applied through the data electrode 5 is cut off, the gate electrode 1). That is, the current path between the drain electrode 2 and the source electrode 3 is interrupted by the voltage charged in the capacitor 4.

The structure shown in Fig. 2 is a current path between the capacitor 4 in which data is stored, that is, the memory cell, the drain electrode 2 and the source electrode 3 which are turned on and off by the electric field by the memory cell, Can be distinguished.

Fig. 3 is a structural diagram showing equivalently the structure shown in Fig. 2. Fig. The structure of FIG. 3 includes a memory cell 20 and a switching means 30. The memory cell 20 emits a constant electric field in the positive or negative direction with respect to the switching means 30 according to the stored data and the switching means 30 is turned on or off according to the electric field applied from the memory cell 20 . Here, if the electric field applied to the switching means 30 is defined as a normal direction, the electric field applied to the direction opposite to the switching means 30 will be defined as a reverse direction. Of course, the definition of this forward or reverse direction is arbitrary, and conversely, the electric field applied to the switching means 30 side may be defined in the reverse direction.

In addition, the switching means 30 will be turned on or off by the forward electric field applied from the memory cell 20, and vice versa by the reverse electric field. The operating state of the switching means 30 will be determined depending on whether the channel between the drain electrode 2 and the source electrode 3 in FIG. 2 is P-type or N-type.

In the above structure, the memory cell 20 may be considered as a part of the recording medium, and the switching means 30 may be considered as a read head for reading data stored in the memory cell 20 of the recording medium. Hereinafter we will use the name readhead as one alternative to the switching means 30.

4 is a cross-sectional view illustrating the structure of a memory cell 20 and a read head 30 according to an embodiment of the present invention.

The memory cell 20 includes a substrate 21, a lower electrode layer 22, a ferroelectric layer 23, and an upper electrode layer 24. A protective layer may be formed on the upper electrode layer 24. As the protective layer, an organic material or a conductive organic material may be used.

As the substrate 21, a general semiconductor substrate, an organic substrate, or a paper substrate can be used. The material of the substrate 21 is not limited to a specific one.

As the lower and upper electrode layers 22 and 24, commonly known conductive materials may be used. For example, the electrode layers 22 and 24 may be formed of gold, silver, aluminum, platinum, an indium tin compound (ITO), a strontium titanate compound (SrTiO ₃ ), other conductive metal oxides and their alloys and compounds, A mixture or compound such as polyaniline, poly (3,4-ethylenedioxythiophene) / polystyrenesulfonate (PEDOT: PSS) based on a polymer or a material such as a multilayered material may be used.

When a paper substrate is used as the substrate 21 and a metal electrode layer is used as the lower electrode layer 22, the lower electrode layer 22 may be formed using, for example, a vacuum deposition method. When an organic material or a paper substrate is used as the substrate 21 and a conductive organic material is used as the lower electrode layer 22, the lower electrode layer 22 can be formed by a method such as spin coating or screen printing.

As the ferroelectric layer 23, an inorganic ferroelectric substance such as an oxide ferroelectric substance, a fluoride ferroelectric substance, a ferroelectric semiconductor, or an organic ferroelectric substance such as a polymeric ferroelectric substance can be used.

As the ferroelectric layer 23, a mixed material of a ferroelectric inorganic material and an organic material or a mixed material of a ferroelectric inorganic material and a ferroelectric organic material may be used. These mixed materials include a method of mixing a powder of a ferroelectric inorganic material with a powder of an organic material or a ferroelectric organic material and then dissolving it in a solvent to produce a mixed solution; a method of dissolving a powder of an organic material or a ferroelectric organic material in a ferroelectric inorganic material solution; Or a ferroelectric organic solution may be mixed to produce a mixed solution, or a method of dissolving a ferroelectric inorganic material powder in an organic material or a ferroelectric organic material to produce a mixed solution.

The ferroelectric layer 23 can be easily formed at a low temperature since the mixed solution can use screen printing or spin coating to form the ferroelectric layer 23.

As the ferroelectric layer 23, a ferroelectric or ferroelectric organic material, or a mixed material obtained by mixing a mixture of a ferroelectric inorganic material with an organic material or a ferroelectric inorganic material, for example, 1% by weight or less of a metal, preferably iron (Fe) .

The ferroelectric material is polarized according to a voltage applied through the lower and upper electrode layers 22 and 24 to form an electric field in an upward direction or a downward direction. This polarization electric field is maintained nonvolatilely even when the voltage applied through the lower and upper electrode layers 22 and 24 is cut off.

That is, the ferroelectric layer 23 is provided as a storage means for storing data applied through the lower and upper electrode layers 22 and 24. The data stored in the ferroelectric layer 23 at this time will be set to "1" or "0" depending on whether the polarization electric field generated therefrom is upward or downward.

The read head 30 has a source region 32 and a drain region 33 and a channel region 34 between the source region 32 and the drain region 33 on a substrate 31 such as a silicon substrate, And a source electrode 35 and a drain electrode 36 are provided on portions of the substrate 31 corresponding to the source and drain regions 32 and 33, respectively.

A protective layer 38 is provided on the upper side of the structure. At this time, a buffer layer 37 composed of a conductive metal or an organic material is preferably formed on the substrate 31 at a position corresponding to the channel region 34. The buffer layer 37 is intended to allow the electric field emitted from the memory cell 20 to be more effectively transferred to the channel region 34. [

The read head 30 having the above-described structure is formed in such a manner that the current path between the source and drain electrodes 35 and 36 is on or off according to the storage data of the memory cell 20 located at the bottom, that is, the electric field direction of the ferroelectric layer 23 Off.

The source electrode 35 and the drain electrode 36 may be coupled to a data input device for inputting data stored in the memory cell 20, though not specifically shown in the figure. The data input device will determine the data to be input as "1" or "0" depending on whether or not a current path is formed between the source and drain electrodes 35 and 36.

5 is a cross-sectional view showing another configuration example of the read head.

5, the read head 40 has a structure in which a source electrode 42 and a drain electrode 43 are formed on a substrate 41, and an organic semiconductor layer 44, for example, is formed on these structures.

As the organic semiconductor layer 44, for example, at least one of Cu-phthalocyanine, Polyacetylene, Merocyanine, Polythiophene, Phthalocyanine, (3-hexylthiophene), poly (3-alkylthiophene), α-sexthiophene, pentacene, α-ω-di Dihydroxy-quaterthiophene, bis (dithienothiophene), alpha-omega-dihexyl-quaterthiophene, di- Dihexyl-anthradithiophene,? -? - dihexyl-quinquethiophene, F8T2, Pc ₂ Lu, Pc ₂ Tm, C ₆₀ / C ₇₀ , TCNQ, C such as _{60, PTCDI-Ph, TCNNQ,} NTCDI, NTCDA, PTCDA, F16CuPc, NTCDI-C8F, DHF-6T, PTCDI-C8 can be used.

In addition, a conductive layer composed of a conductive metal or an organic material may be formed on the upper side of the organic semiconductor layer 44, that is, on the side facing the memory cell 20. This conductive layer functions as a protective film for protecting the semiconductor layer 44 and functions as a buffer layer for effectively guiding the electric field applied from the memory cell 20 to the semiconductor layer 44.

The structure uses an organic material as a semiconductor layer. Such an organic semiconductor can be formed at a low temperature, and a layer can be formed by a simple process such as screen printing. In addition, in the above structure, it is possible to use a low-priced species or an organic material instead of an expensive semiconductor wafer as the substrate 40. That is, the manufacturing of the read head 40 can be facilitated, and the manufacturing cost can be greatly reduced.

6 schematically shows an example of the recording medium 50 employing the above-described memory cell structure.

6, the recording medium 50 is composed of a rectangular body 51, and a recording area 52 is provided on its upper surface. The recording area 52 is composed of, for example, a semiconductor substrate, an organic substrate, a paper substrate, or the like. The shape of the recording medium 50 is not limited to a specific one. Also, the mounting position of the recording area 52 is not limited to a specific position.

7 schematically shows an example of a memory cell array structure arranged in the recording area 52. As shown in FIG. 7, a plurality of lower electrode layers 71 are formed on the bottom surface of the recording area 52 while being extended in one direction, for example, in the transverse direction. On the upper side of the lower electrode layer 71, A plurality of upper electrode layers 73 are formed. At this time, a ferroelectric layer made of a ferroelectric material is formed between the lower electrode layer 71 and the upper electrode layer 73. The ferroelectric layer is formed only in the crossing region of the lower electrode layer 71 and the upper electrode layer 73 as described later or entirely on the upper side of the lower electrode layer 71. [

The lower electrode layer 71 is electrically coupled to the contact pads 71a and 71b through the lead 71c and the upper electrode layer 73 is electrically coupled to the contact pads 73a and 73b through the lead 73c .

The lower electrode layer 71 is coupled to the contact pads 71a and 71b alternately left or right and the upper electrode layer 73 is connected to the contact pads 73a, 73b. This is for setting the surface area of the contact pads 71a, 71b, 73a, 73b to the maximum.

8 schematically shows another example of the memory cell array structure arranged in the recording area 52. As shown in FIG. 8, the electrode layers 71 disposed on the upper side of the lower electrode layer 71 are coupled with the contact pads 71a positioned on the left side, while the electrode layers 71 disposed on the lower side are located on the right side The electrode layers 73 disposed on the left side of the upper electrode layer 73 are connected to the contact pads 73a disposed on the upper side and the electrode layers 73 disposed on the right side are connected to the contact pads 71b disposed on the lower side of the upper electrode layer 73. [ Pad 73b. Since the other portions are substantially the same as those in the embodiment of FIG. 7, a detailed description thereof will be omitted.

9 is a cross-sectional view showing an example of a cross-sectional structure of a memory cell array disposed in the recording area 52, which is a cross-sectional view showing a configuration of the essential part of the cross-sectional structure taken along the line A-A 'in FIG.

9, a lower electrode layer 71 is formed on the upper side of the recording region 52 in the transverse direction, and an upper electrode layer 73 is formed in a direction perpendicular to the lower electrode layer 71. [ A ferroelectric layer 72 is formed in a region where the lower electrode layer 71 and the upper electrode layer 73 intersect. The portions where the lower electrode layer 71 and the upper electrode layer 73 intersect each constitute one memory cell 53.

10 to 14 are sectional views showing other structural examples of the memory cell array arranged in the recording area 52. In Fig.

10, the ferroelectric layer 72 is provided on the upper surface of the lower electrode layer 71 as a whole. In this structure, the ferroelectric layer 72, which is located at the intersection of the lower electrode layer 71 and the upper electrode layer 73 when a data voltage, that is, a write voltage is applied through the lower electrode layer 71 and the upper electrode layer 73, The other memory cells 53 adjacent to the memory cell 53 have no particular influence.

FIG. 11 shows another modification of the structural example shown in FIG. 9, which is formed by filling an insulator 80, preferably an organic insulator, in a space between each memory cell 53. FIG.

12 shows another modification of the structural example shown in Fig. 10, in which an insulator 80 is formed in a section between upper electrode layers 73 of each memory cell 53. Fig.

13 and 14 show another modified example of the structural example shown in Figs. 11 and 12, respectively, which are formed by coating a protection layer 90 made of, for example, an insulating material as a whole on the upper side of the memory cell 53. Fig.

The lower electrode layer 71 and the lead 71c and the contact pads 71a and 71b are formed in a single process on the recording area 52 and the ferroelectric layer 72 And an upper electrode layer 73 and lead wires 73c and contact pads 73a and 73b are sequentially formed on the upper side of the ferroelectric layer 72. [ The recording area 52 in which the memory cells 53 are formed is bonded to the body 51 to complete the recording apparatus 50. [

15 is a perspective view schematically showing the configuration of a recording and reading apparatus 100 for recording data on the above-described recording medium 50 and reading data from the recording medium 50. Fig.

The recording / reading apparatus 100 according to the present invention comprises a main body 110 and a lid 120. On the upper surface of the main body 110, a seating part 130 for mounting the recording medium 50 thereon is provided.

A plurality of read heads 131 and data pads 132 are provided on the upper surface of the seating unit 130.

The read head 131 is for reading the data stored in the memory cell 53 in FIGS. 7 to 14 and includes a plurality of memory cells 53 provided in the recording area 52 of the recording medium 50 Respectively. Each of these read heads 131 has the structure described in FIG. 4 or FIG. 5, respectively.

The data pad 132 is provided at a position corresponding to the contact pads 71a and 71b (73a and 73b) provided in the recording area 52 of the recording medium 50, respectively. The data pad 132 records data in the memory cell 53 by supplying a write voltage and a ground voltage to the contact pads 71a and 71b (73a and 73b), respectively.

In the data writing operation, the writing / reading apparatus 100 supplies a ground voltage to one of the contact pads 71a and 71b and supplies a write voltage equal to or higher than a predetermined contact pressure to the other contact pads 73a and 73b 1 "or" 0 "is written to the memory cell 53 by polarizing the ferroelectric layer 72 provided in the specific memory cell 53 in the method of FIG.

On the other hand, at the time of data reading, the recording / reading apparatus 100 executes data reading in such a manner that the reading heads 131 are turned on or off in a state in which the data pad 132 is kept in the floating state .

Therefore, the recording medium 50 and the data recording / reading apparatus 100 can perform a data recording operation or a data reading operation on a plurality of memory cells 53 provided in the recording medium 50, The operation can be performed at a very high speed.

16 shows another embodiment of the data recording / reading apparatus.

The data recording / reading apparatus 200 shown in FIG. 16 has a rectangular main body 210 and an inlet 220 for receiving the recording medium 50 is provided at one side of the main body 210.

A plurality of read heads and data pads are provided on the side of the recording medium 50 facing the recording area 52 when the user enters the recording medium 50 . These read heads and data pads are provided in number corresponding to positions corresponding to the memory cells 53 and the contact pads 71a, 71b (73a, 73b), respectively, as in Fig.

The shape and structure of the data recording / reading apparatus are not limited to specific ones, and any structure capable of recording data on the recording medium 50 according to the present invention or reading the recorded data can be employed.

The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the technical spirit of the present invention.

15 and 16, one read head 131 is provided corresponding to each memory cell 53. However, it is also possible to provide two or more read heads 131 for one memory cell 53 If the read head 131 is arranged, the data read operation can be performed more stably.

20: memory cell, 21: substrate,
22: lower electrode layer, 23: ferroelectric layer,
24: upper electrode layer, 30: read head,
31: substrate, 32: source region,
33: drain region, 34: channel region,
35: source electrode, 36: drain electrode,
37: buffer layer, 38: protective layer.

Claims (54)

delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete delete And a plurality of contact pads electrically coupled to the memory cells, wherein the plurality of memory cells are formed of ferroelectric material and the plurality of contact pads are electrically coupled to the memory cells, A data recording and reading apparatus for recording and reading data,
The data recording and reading apparatus
Body and
And a cover for opening and closing the upper side of the main body,
A seat for seating a recording medium is provided on the upper side of the main body,
A read head provided on the upper surface of the seat portion at a position corresponding to the memory cell,
And a plurality of data pads provided at positions corresponding to the contact pads and supplying a write voltage or a ground voltage to the contact pads. 40. The method of claim 39,
The read head includes a semiconductor substrate, source and drain regions formed on the substrate, a channel region formed between the source and drain regions, source and drain electrodes formed on the source and drain regions, And a protective layer formed on the upper side of the drain electrode. 41. The method of claim 40,
And a buffer layer made of a conductive material is further provided on the channel region. 40. The method of claim 39,
Wherein at least two read heads are provided for one memory cell. 40. The method of claim 39,
Wherein the read head comprises a substrate, source and drain electrodes formed on the substrate, and an organic semiconductor layer formed on the substrate and above the source and drain electrodes. 44. The method of claim 43,
And a buffer layer made of a conductive material is further provided on the organic semiconductor layer. 44. The method of claim 43,
Wherein the substrate is made of paper. 44. The method of claim 43,
Wherein the substrate is made of an organic material. And a plurality of contact pads electrically coupled to the memory cells, wherein the plurality of memory cells are formed of ferroelectric material and the plurality of contact pads are electrically coupled to the memory cells, A data recording and reading apparatus for recording and reading data,
The data recording and reading apparatus
Body and
An inlet for receiving the recording medium into the inside of the main body,
A reading head and a data pad provided inside the inlet and facing the recording area of the recording medium introduced through the inlet,
Each of the read heads being provided at a position corresponding to a memory cell,
Wherein the data pad is provided in electrical contact with the contact pad. 49. The method of claim 47,
The read head includes a semiconductor substrate, source and drain regions formed on the substrate, a channel region formed between the source and drain regions, source and drain electrodes formed on the source and drain regions, And a protective layer formed on the upper side of the drain electrode. 49. The method of claim 48,
And a buffer layer made of a conductive material is further provided on the channel region. 49. The method of claim 47,
Wherein at least two read heads are provided for one memory cell. 49. The method of claim 47,
Wherein the read head comprises a substrate, source and drain electrodes formed on the substrate, and an organic semiconductor layer formed on the substrate and above the source and drain electrodes. 52. The method of claim 51,
And a buffer layer made of a conductive material is further provided on the organic semiconductor layer. 52. The method of claim 51,
Wherein the substrate is made of paper. 52. The method of claim 51,
Wherein the substrate is made of an organic material.

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