KR101637180B1 - Miniaturized metamaterial antenna and method for the manufacturing the same - Google Patents

Miniaturized metamaterial antenna and method for the manufacturing the same Download PDF

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Publication number
KR101637180B1
KR101637180B1 KR1020150128466A KR20150128466A KR101637180B1 KR 101637180 B1 KR101637180 B1 KR 101637180B1 KR 1020150128466 A KR1020150128466 A KR 1020150128466A KR 20150128466 A KR20150128466 A KR 20150128466A KR 101637180 B1 KR101637180 B1 KR 101637180B1
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South Korea
Prior art keywords
metal layer
quantum dot
anchor
quantum dots
attached
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KR1020150128466A
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Korean (ko)
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김민경
윤관호
김인기
소순애
노준석
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포항공과대학교 산학협력단
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0086—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices having materials with a synthesized negative refractive index, e.g. metamaterials or left-handed materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00—Details of, or arrangements associated with, antennas
    • H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support

Abstract

The present invention provides a method for manufacturing a miniaturized metamaterial antenna by positioning a quantum dot at a desired location. The method for manufacturing a miniaturized metamaterial antenna comprises the following steps of: depositing a metal layer on a substrate; forming resist having a structure of covering at least a portion of an upper portion of the metal layer; attaching at least one quantum dot to the upper portion of the metal layer; and eliminating the resist. The metal layer comprises a metamaterial.

Description

TECHNICAL FIELD [0001] The present invention relates to an ultra-small metamaterial antenna and a method of manufacturing the same.

The present invention relates to a method for positioning a quantum dot at a desired position. More specifically, the present invention relates to a method of precisely controlling and positioning quantum dots one by one using chemical functionalization and a quantum dot structure using the same.

As researches in the field of nanotechnology have progressed actively at home and abroad, application researches for practical application of nanotechnology in various fields have been carried out in various fields such as semiconductors, displays, optical devices and functional devices. Nanopatterning technology for manufacturing nano-level materials is a prerequisite for realization of commercialization of nanotechnology. Electron beam lithography (Electron Beam Lithography) and Nano Imprinting ) Have been actively studied. Particularly, the field of single electron devices using quantum dots is attracting attention with the incidence of nanotechnology, and a lot of progress is being made now.

The present invention relates to a method for precisely controlling quantum dots one by one using a chemical functionalization function to position quantum dots at desired positions, and a quantum dot structure using the method.

In general, quantum structure uniformity and position control are very important factors in the fabrication of optoelectronic devices using quantum dots. However, the conventional mask and lithography methods have a disadvantage in that they are complex in process and have many surface defects.

In particular, it is very difficult to control the quantum dots one by one. Therefore, it is very difficult to find a single quantum dot by sputtering a quantum dot in a large area through spin coating or the like, or to perform AFM (Atomic Force Microscopy) There was a method to control each quantum dot by using it, but consistent and precise control was not easy.

KR 10-1293666 B1

The present invention aims at precisely controlling quantum dots one by one and positioning the quantum dots at desired positions.

Further, the present invention aims at precisely positioning single quantum dots, respectively, so that the quantum dots can have a uniform and uniform concentration regardless of their position.

An object of the present invention is to fabricate an ultra-small metamaterial antenna of nm unit in which the antenna frequency band increases from several hundreds of MHz to hundreds of THz units.

It is another object of the present invention to provide an ultra-small metamaterial antenna in which a single quantum dot is arranged to increase the transmission efficiency and control the direction of transmission of an antenna signal, compared with a conventional antenna.

In one embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: depositing a metal layer on a substrate; forming a resist having a structure covering at least a portion of the metal layer; attaching at least one quantum dot to the metal layer; Wherein the metal layer comprises a meta material. The method of claim 1, wherein the metallic layer comprises a meta material.

Wherein attaching the at least one quantum dot comprises attaching an anchor on the metal layer and connecting the linker to the anchor to attach the at least one quantum dot. Further, the step of attaching the anchor may be performed through an MUA treatment. Further, the step of connecting the linker to the anchor may be performed using EDC (1-Ethyl-3- (3-dimethylaminopropyl) carbodiimide).

Further, the resist forming step may be performed using electron beam lithography. Further, the metal layer may have a height of 20 nm to 40 nm. In addition, the metal layer may include gold (Au). The number of quantum dots may be one or two. Here, the quantum dots may be positioned on both ends of the metal layer.

In another embodiment of the present invention, there is provided a micro metamaterial antenna comprising a substrate, a metal layer deposited on the substrate, and at least one single quantum dot attached on top of the metal layer, wherein the metal layer comprises a meta material. do. Here, the single quantum dot may be formed using a patterned resist using electron beam lithography.

The at least one single quantum dot may be attached to the metal layer using an anchor attached to the metal layer and a linker connected to the anchor to attach the at least one single quantum dot. In addition, the anchor may be attached via an MUA treatment. In addition, the linker may be connected to the anchor using EDC (1-Ethyl-3- (3-dimethylaminopropyl) carbodiimide).

In addition, the metal layer may include gold (Au). In addition, the quantum dots may be connected to one anchor on the metal layer. The number of quantum dots may be one or two. Here, the quantum dots may be positioned on both ends of the metal layer.

In yet another embodiment of the present invention there is provided a method of fabricating a microelectronic device comprising a substrate, a metal bar deposited on the substrate, and a single quantum dot attached on both ends of the metal bar, A metamaterial antenna is provided. Here, the metal bar may include gold (Au).

According to the present invention, the quantum dots can be precisely controlled one by one and the quantum dots can be positioned at desired positions.

Further, according to the present invention, by precisely positioning each single quantum dot, the quantum dots can have a uniform and uniform concentration regardless of the position.

Also, according to the present invention, it is possible to provide a method and an apparatus for controlling quantum dot positions in units of single quantum dots using chemical functionalization.

In addition, according to the present invention, it is possible to fabricate a micrometer-sized meta-material antenna in nm, and the antenna frequency band can be increased to several hundred THz units in units of several hundred MHz.

In addition, according to the present invention, it is possible to increase the transmission efficiency of a conventional meta-material antenna with a single quantum dot disposed therein, and adjust the direction of a signal radiated from the antenna to a desired direction.

1 is a cross-sectional view of a fabrication process for explaining a quantum dot position control method using a direct lift-off according to the prior art.
Figure 2 shows a quantum dot array structure created using a direct lift-off method.
3 is a cross-sectional view of a manufacturing process for explaining a quantum dot position control method using quantum dot doping according to another conventional technique.
4 shows a quantum dot array structure generated using the quantum dot injection method.
5A to 5F are cross-sectional views illustrating a method of controlling a quantum dot position according to an embodiment of the present invention.
FIG. 6 is a perspective view of a fabrication process for explaining a quantum dot position control method according to an embodiment of the present invention.
7A to 7F are cross-sectional views illustrating a single quantum dot position control method according to another embodiment of the present invention.
8 is a perspective view illustrating a single quantum dot pattern structure produced according to another embodiment of the present invention.
FIGS. 9A to 9C show a light emission of a single quantum dot array according to an embodiment of the present invention.
10A to 10C show a radiation pattern of an ultra-small metamaterial antenna according to an embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The configuration of the present invention and the operation and effect thereof will be clearly understood through the following detailed description.

FIG. 1 is a cross-sectional view of a manufacturing process for explaining a quantum dot position control method using a direct lift-off according to the prior art. In order, MgF2 is deposited as an adhesion layer in step (a). (B) using a polymeric resist, such as polymethylmethacrylate (PMMA), with a variable width between about 50 nm and 1 m and a half-width between about 250 nm and 5 m using electron beam lithography, pitch are arranged in a row. Here, PMMA is used as a mold for forming a quantum dot pattern. In the next step (c), the quantum dots are dispersed and deposited on the PMMA pattern. Thereafter, when the PMMA is removed through the lift-off process in step (d), only the quantum dot array is left.

However, in the case of the direct lift-off method, it is not easy to control the thickness and the width of the coated PMMA mold. Therefore, in order to trap a single quantum dot, it is necessary to make the size of a hole equal to or smaller than the size of the hole. This is not easy, and therefore, a structure in which a plurality of quantum dots are gathered rather than a single quantum dot is mostly generated . And, when it is made asymmetric structure like a long channel not a symmetric structure like a cylindrical shape, it is impossible to control the concentration between positions, that is, to control the number of quantum dots at each position.

FIG. 2 illustrates a quantum dot array structure generated using the direct lift-off method described with reference to FIG. In the case of the direct lift-off method, since the quantum dots can not be controlled one by one, a structure in which a plurality of quantum dots are aggregated occurs. Therefore, as shown in FIG. 2, the quantum dots do not have a uniform density depending on each position, that is, the number of quantum dots varies at each position, which causes brightness to vary.

FIG. 3 shows a cross-sectional view of a manufacturing process for explaining a quantum dot position control method using quantum dot doping according to another conventional technique. In order, a substrate is prepared for coating polymer resist such as PMMA in step (a), in which an adhesion layer is not essential. In step (b), the quantum dots are injected into the PMMA powder together with a solvent. Thereafter, in step (c), arrays having a predetermined width and interval are arranged in a line by using general electron beam lithography.

As shown in step (b) of FIG. 3, it can be seen that when the quantum dots are doped into the PMMA polymer, they are non-uniformly laid randomly. Therefore, when the desired structure is formed by patterning it, it is not easy to adjust the concentration at each position, and the number of the quantum dots varies at each position.

FIG. 4 illustrates a quantum dot array structure generated using the quantum dot injection method described with reference to FIG. The method of injecting a quantum dot shown in FIG. 3 also has a similar problem to that of the direct lift-off method of FIG. 1. Since uniform concentration control is difficult through quantum dot doping, the number of quantum dots varies at each position. The quantum dot injection method can be more uniform in its concentration control than the direct lift-off method, but it is still possible only to stochastically estimate the concentration from a certain range to a certain range, It is impossible to control it.

5A to 5F are cross-sectional views illustrating a method of controlling a quantum dot position according to an embodiment of the present invention. Hereinafter, experimental examples are provided to facilitate understanding of the present invention. It should be understood, however, that the following examples are for the purpose of promoting understanding of the present invention and are not intended to limit the scope of the present invention.

The substrate 501 used in this embodiment in FIG. 5A may be, but is not limited to, a silicon wafer used for example in the manufacture of integrated circuits. A resist 502 is formed on a substrate 501 through a process such as spin coating and is then patterned using electron beam lithography or the like for the metal or metamaterial structure to be formed later, As shown in FIG. The resist 502 may be, for example, a polymer such as polymethyl methacrylate (PMMA), but is not limited thereto.

Referring to FIG. 5B, a metal layer 503 is deposited on a portion where a resist 502 is not formed by a mold structure formed of a resist 502. FIG. The metal layer 503 may serve as a metamaterial antenna, and the height of a typical metal layer 503 may be a value between about 20 nm and 40 nm, or about 30 nm. If necessary, a chromium (Cr) adhesion layer may be selectively used between the substrate 501 and the metal layer 503 in order to strengthen the adhesive force between the gold (Au) metal layer 503 and the substrate 501 .

Referring to FIG. 5C, an anchor 504 is attached on the resist 502 and the metal layer 503, and the anchor 504 may be composed of a self-assembled monolayer, for example, by chemical treatment.

The anchor 504 includes a thiol group at one end (a reactor of the mixture) and a carboxyl group, a carbonyl group, and a hydroxyl group at the other end For example, MUA (11-mercaptoundecanoic acid).

As an example of the chemical treatment for forming the anchor 504, MUA treatment can be applied. For example, 50 mg of MUA and ethanol of 200 proof can be mixed by ultrasonication . Also, soaking can be performed for about 24 to 48 hours.

5D, a linker 505 is attached to attach the quantum dots to the anchor 504 attached on the resist 502 and the metal layer 503. The linker 505 is formed by mixing 40 mg of EDC (1-Ethyl-3- (3-dimethylaminopropyl) carbodiimide) and 2- (N-morpholino) ethanesulfonic acid Followed by 30 minutes of soaking and cleaning through a buffer solution to a pH of less than 7.5.

5E, quantum dots 506 are attached to an anchor 504 attached on a resist 502 and a metal layer 503 to form an array structure. Since quantum dots generally have excellent color purity, white light having excellent optical characteristics can be obtained. Also, since various colors of light can be realized by controlling the size of the quantum dots, various light can be easily obtained by using a single light source according to the quantum dots used.

The quantum dot 506 may be a Group II-VI material, a Group III-V material, or a Group IV material, and specifically, CdSe, CdTe, CdS, ZnSe, ZnTe, ZnS, InP, GaP, GaInP2, PbS, ZnO, TiO2, AgI , AgBr, HgI2, PbSe, In2S3, In2Se3, Cd3P2, Cd3As2 or GaAs, but is not limited thereto.

For example, the quantum dot 506 may have an amine tail and emit at a center wavelength of about 800 nm. The quantum dot 506 having an amine tail is connected via an linker 505 to an anchor 504 attached on the metal layer 503 described above. The quantum dots 506 may have a carboxyl tail, for example. In this case, an amine-treated anchor 504 may be used. In this manner, the quantum dots 506 ).

Such quantum dots 506 may be formed through immersion and may involve a dilution process that reduces the concentration to an appropriate concentration, i. E., To match the appropriate number of quantum dots. For example, 2 μl of quantum dots can be diluted in 4 ml or 8 ml of PBS (Phosphate Buffered Saline) between pH 7 and pH 7.5 and mixed by ultrasonication.

Finally, referring to FIG. 5F, all of the resist 502 to which the quantum dot 506 is attached is removed through a lift-off process, and the metal layer 503 to which the quantum dot 506 is attached exists. For example, the lift-off process may be performed using acetone. Here, ultrasonication may not be performed in order to prevent the metal layer 503 from falling off the substrate 501.

6A and 6B are perspective views illustrating a method of controlling a quantum dot position according to an exemplary embodiment of the present invention.

6A is a perspective view of an array structure in which quantum dots 506 are attached one by one to an anchor 504 attached on a resist 502 and a metal layer 503 in Fig. 5E. It is confirmed that the quantum dots 506 formed on the resist 502 and the metal layer 503 are attached to the respective anchors 504 and uniformly distributed one by one.

FIG. 6B shows a state in which only the metal layer 503 to which the quantum dot 506 is attached after the lift-off process is present in FIG. 5F. It can be confirmed that the quantum dots 506 are uniformly arranged on the metal layer 503 at a desired position. Although the four quantum dots are shown for convenience in FIG. 6B, the number of quantum dots 506 may vary depending on the length of the metal layer 503.

7A to 7F are cross-sectional views illustrating a method of controlling a quantum dot position according to another embodiment of the present invention. The structure shown in Figs. 7A to 7F uses a hybrid nanostructure to position a single quantum dot, i.e., one quantum dot, at a desired position, i.e., a predetermined position. Since most of the process contents are similar to those of FIGS. 5A to 5F, duplicate descriptions will be omitted.

7A, only the metal layer 703 is deposited on the substrate 701 without a resist. The metal layer 703 is intended to position the quantum dots thereon, but in this embodiment, the quantum dots are positioned only on one end of the metal layer 703.

7B shows a state in which a resist 702 of a hybrid nanostructure is formed on the substrate 701. In FIG. The structure of the resist 702 may be patterned as in FIG. 7B using electron beam lithography or the like for the metal or metamaterial structure to be formed later. 7B, the left resist 702 covers most of the metal layer 703 in order to form a space for only one quantum dot on one end of the metal layer 703.

7C shows an anchor 704 attached to one end of the resist 702 and the metal layer 703 through, for example, MUA treatment. There is only one anchor 704 on the metal layer 703 in Fig. 7C, unlike the anchor 504 in Fig. 5c. Next, Fig. 7D shows a state in which a linker 705 for attaching a quantum dot to a single anchor 704 attached on the resist 702 and the metal layer 703 is connected. Next, FIG. 7E shows a structure in which a single quantum dot 706 is attached to quantum dots attached to an anchor on the resist 702 and an anchor 704 attached on the metal layer 703.

FIG. 7F shows a state in which the resist 702 is removed after the lift-off process, and the metal layer 703 to which the single quantum dot 706 is attached exists. It can be confirmed that the single quantum dot 706 is located only at a desired position, that is, on one end of the metal layer 703. [

Although the single quantum dot 706 is shown as one of the quantum dots in Fig. 7F, it is possible to obtain a structure in which the desired number of quantum dots are arranged by changing the structure of the hybrid structure resist 702 if necessary. In FIG. 7F, the quantum dots are located only at one end of the metal layer 703, but it is possible to obtain a structure in which the desired number of quantum dots are arranged at desired positions by changing the structure of the hybrid structure resist 702, if necessary.

8 is a perspective view illustrating a single quantum dot pattern structure produced according to another embodiment of the present invention. 7A to 7F, and arranging a plurality of such single quantum dots at regular intervals, a wide range of uniform quantum dot arrays can be formed. In such a case, the align error can be controlled to less than 10 nm, which is considerably more sophisticated than the position control method in the prior art.

In the single quantum dot pattern structure shown in FIG. 8, it can be seen that unlike the uneven density quantum dot arrays in FIGS. 2 and 4, a uniform uniform brightness is exhibited according to a uniform position interval.

8, a single quantum dot can be positioned on one end or both ends of a metal layer, for example, a gold (Au) deposition layer. In this case, it can be used as an ultra-small metamaterial antenna. In such a gold antenna, asymmetrical signal emission is possible when a single quantum dot is located at only one end, and symmetrical signal emission is possible when a single quantum dot is located at both ends.

When the gold antenna has a wavelength of 600 nm as a specific resonance frequency and the wavelength of the emission frequency of the quantum dot is 800 nm, when the quantum dot is excited first and the energy is transmitted to the gold antenna, Lt; / RTI >

FIGS. 9A to 9C show a light emission of a single quantum dot array according to an embodiment of the present invention.

FIG. 9A shows a single quantum dot array having a pitch of 2 μm according to an embodiment of the present invention. It can be seen that each single quantum dot is distributed with a constant pitch interval. Such single quantum dots are located on a single metal bar, metal layer or metal antenna, each of gold, and by arranging such a single metal bar in an array, a single quantum dot array as shown in FIG. 9A can be obtained.

Figs. 9B and 9C are enlarged photographs showing the emission of single quantum dots of one of the single quantum dot arrays of Fig. 9A. Referring to Fig. 9C, the circular shape of the single quantum dot emits brighter light in the outer circular band portion.

FIGS. 10A through 10C show radiation patterns of a micro metamaterial antenna according to an embodiment of the present invention. FIG.

When the quantum dots are attached to both ends of the gold antenna, that is, both ends of the gold antenna, it is possible to determine whether or not the quantum dots are closely attached to both ends of the gold antenna. For example, if a single quantum dot is not attached to both ends of the gold antenna, there will be no signal change since there is no emission of light from the quantum dot.

10A shows a radiation pattern of an XY axis of a single quantum dot in an ultra-small meta-material antenna fabricated according to an embodiment of the present invention, FIG. 10B is a graph showing a radiation pattern in the X-axis of a metamaterial antenna, Fig. 6 is a graph showing a radiation pattern in the Y-axis of the metamaterial antenna. Fig.

Referring to FIGS. 10B and 10C, when a single quantum dot is attached to both ends of the gold antenna, the signal intensity at both ends increases sharply. 10B and 10C, it can be seen that both ends of the gold antenna are located at distances of 100 and 250 pixels, and that the distance between the two ends of the gold antenna where the single quantum dot is located It can be seen that the signal intensity of the pattern is rapidly increased symmetrically, and thus it can be seen that the single quantum dot is located at a desired position, that is, at both ends of the gold antenna.

In addition, according to the present invention, it is possible to fabricate a micrometer-sized meta-material antenna in nm, and the antenna frequency band can be increased to several hundred THz units in units of several hundred MHz.

In addition, according to the present invention, it is possible to improve the transmission efficiency and adjust the position and the intensity of the emitted signal by adjusting the position of attaching the quantum dot, by manufacturing a microminiaturized metamaterial antenna in which single quantum dots are arranged.

501 substrate 502 resist
503 metal layer 504 anchor
505 linker 506 quantum dot
701 substrate 702 hybrid structure resist
703 metal layer 704 anchor
705 Linker 706 single quantum dot

Claims (22)

A method of manufacturing an ultra-small metamaterial antenna,
Depositing a metal layer on the substrate;
Forming a resist having a structure covering at least a part of the upper portion of the metal layer;
Attaching at least one quantum dot on the metal layer; And
And removing the resist,
Wherein attaching the at least one quantum dot comprises:
Attaching an anchor on the metal layer; And
And connecting the linker to the anchor to attach the at least one quantum dot,
Wherein the metal layer comprises a meta material. delete 2. The method of claim 1, wherein attaching the anchor is performed through an MUA treatment. 2. The method of claim 1, wherein coupling the linker to the anchor is performed using EDC (1-Ethyl-3- (3-dimethylaminopropyl) carbodiimide). 2. The method of claim 1, wherein the resist-forming step is performed using electron beam lithography. The method of claim 1, wherein the metal layer has a height of 20 nm to 40 nm. The method of claim 1, wherein the metal layer comprises gold (Au). The method according to claim 1, wherein the number of quantum dots is one. The method according to claim 1, wherein the number of quantum dots is two. 10. The method of claim 9, wherein the quantum dots are each located on both ends of the metal layer. In an ultra-small metamaterial antenna,
Board;
A metal layer deposited on the substrate; And
And at least one single quantum dot attached on the metal layer,
Wherein the at least one single quantum dot is attached to an upper portion of the metal layer using an anchor attached to the metal layer and a linker connected to the anchor to attach the at least one single quantum dot,
Wherein the metal layer comprises a meta material. 12. The micro metamaterial antenna of claim 11, wherein the single quantum dot is formed using resist patterned using electron beam lithography. delete 12. The micro metamaterial antenna according to claim 11, wherein the anchor is attached via an MUA treatment. The micro meta-material antenna according to claim 11, wherein the linker is connected to the anchor using EDC (1-Ethyl-3- (3-dimethylaminopropyl) carbodiimide). The micro metamaterial antenna according to claim 11, wherein the metal layer comprises gold (Au). The micro meta-material antenna according to claim 11, wherein the quantum dots are connected to one anchor on the metal layer. 12. The micro metamaterial antenna according to claim 11, wherein the number of the quantum dots is one. The micro metamaterial antenna according to claim 11, wherein the number of the quantum dots is two. The micrometric material antenna according to claim 19, wherein each of the quantum dots is located on both ends of the metal layer. In an ultra-small metamaterial antenna,
Board;
A metal bar deposited on a substrate; And
And a single quantum dot attached on both ends of the metal bar,
Wherein the at least one single quantum dot is attached to an upper portion of the metal bar using an anchor attached to the metal bar and a linker connected to the anchor to attach the at least one single quantum dot,
Wherein the metal bar comprises a meta material. 22. The micro metamaterial antenna of claim 21, wherein the metal bar comprises gold (Au).
KR1020150128466A 2015-09-10 2015-09-10 Miniaturized metamaterial antenna and method for the manufacturing the same KR101637180B1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130054315A (en) * 2010-06-15 2013-05-24 오피스 오브 더 내셔널 브로드캐스팅 앤드 텔레커뮤니케이션즈 커미션 Metamaterial based ultra thin microstrip antennas
KR101293666B1 (en) 2011-03-07 2013-08-13 고려대학교 산학협력단 A Three-Dimensional Nanostructured Array of Protein Nanoparticles
KR20150033079A (en) * 2013-09-23 2015-04-01 한국전자통신연구원 Metamaterial structures

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130054315A (en) * 2010-06-15 2013-05-24 오피스 오브 더 내셔널 브로드캐스팅 앤드 텔레커뮤니케이션즈 커미션 Metamaterial based ultra thin microstrip antennas
KR101293666B1 (en) 2011-03-07 2013-08-13 고려대학교 산학협력단 A Three-Dimensional Nanostructured Array of Protein Nanoparticles
KR20150033079A (en) * 2013-09-23 2015-04-01 한국전자통신연구원 Metamaterial structures

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