KR101573113B1 - Slurry Composition for Chemical Mechanical Polishing - Google Patents

Abstract

The slurry composition of the present invention comprises 0.1 to 10 wt% of an abrasive, 0.01 to 1 wt% of an isothiazole dispersion and stabilizer, 0.01 to 1 wt% of a benzenecarboxylic acid-based corrosion inhibitor, 0.01 to 15% by weight of a chelating agent, and 0.01 to 1% by weight of a complexing agent consisting of an acrylamide-based compound and an aminomethylpropanol-based compound.
The slurry composition of the present invention has a stable Cu removal rate and a selective polishing rate between Cu and Ta while minimizing dishing and erosion even under a high-speed CMP process as compared with conventional polishing slurries Selective Remove Rate) is maximized, so that defects do not occur on the surface to be polished.

Description

Technical Field [0001] The present invention relates to a slurry composition for chemical mechanical polishing,

The present invention relates to a slurry composition for chemical mechanical polishing (CMP), and more particularly, to a slurry composition comprising an abrasive, a dispersant, a stabilizer, a corrosion inhibitor, a chelating agent and an oxidizing agent, The present invention realizes a stable Cu removal rate and maximized selective removal rate between Cu and Ta while minimizing the dishing and erosion phenomenon, To a slurry composition for CMP.

Planarization is becoming increasingly important as semiconductor technology continues to develop and miniaturization of line widths continues. Particularly, due to an increase in the degree of semiconductor integration, a multi-level interconnection structure has been introduced, photolithography with a shorter wavelength has been adopted, and a problem of depth of field (DOF) The CMP process is more useful for solving the problem efficiently.

The CMP process refers to a process in which a polishing pad is attached to the surface of a polishing table that rotates or eccentrically moves on a flat surface, and the front surface of the wafer is rubbed and planarized while supplying a slurry containing the abrasive.

More specifically, the mechanical polishing portion of the wafer surface from the slurry to the slurry / wafer interface and to the wafer surface is a mass transfer stage, where the adsorption of the reactants at the surface or the mechanical polishing portion of the wafer surface is performed at the interface Reaction step. Actually, the step of polishing by CMP is due to the reaction at the interface, and is a necessary step for the continuous reaction in the mass transfer step.

During the reaction at the interface, the chemical reaction occurs due to the reaction between the reactant adsorption on the surface and the adsorbed reactant from the surface of the wafer and the surface space of the wafer, and the material removed in the mechanical removal step of the wafer surface diffuses into the bulk, In the bulk, the reactants for the reaction are supplied to the interface, and the reaction occurs continuously, so that the mass transfer of the reactants from the slurry to the slurry / wafer surface occurs and mechanical / chemical polishing takes place.

Conventional CMP processes reduce the erosion or dishing phenomenon, maintain a stable Cu removal rate, and maximize the selective removal rate between Cu and Ta. There is a desperate need to prevent defects from occurring.

Disclosure of the Invention It is an object of the present invention to reduce the erosion or dishing phenomenon in comparison with the conventional CMP slurry, to maintain a stable Cu removal rate, and to maximize the selective removal rate between Cu and Ta And to provide a slurry composition capable of minimizing defects on the surface to be polished.

The slurry composition of the present invention for solving the above-

Corrosion of 0.1 to 10 wt% of an abrasive, 0.01 to 1 wt% of an isothiazole dispersion and stabilizer, benzene carboxylic acid or benzotriazole (1,2,3-benzotriazole) 0.01 to 1 wt% of an inhibitor, 0.01 to 15 wt% of an amino acid (Chelating Agent), 0.01 to 1 wt% of a complexing agent of an acrylamide type and an aminomethylpropanol type, and an oxidizing agent and a diluent .

The abrasive is preferably made of colloidal silica or alumina having a cross-linked structure and an average particle diameter of 20 to 130 nm.

In addition, the isothiazole-based dispersion and stabilizer may be prepared by,

5-Chloro-2-methyl-3 (2H) -isothiazolone, 5-Chloro-2-methyl-2H-isothiazol- chloro-4-methylbenzothiazole, 2-Amino-4-chloromethylthiazole 7250-84-2, 10- (Chloroacetyl) -2- (methylthio) -10H-phenothiazine, 2-Chloro-5-aminomethylthiazole, ) thiazole, 2-Chloro-5-chloromethylthiazole, 5-Chloro-2- (4-chlorophenylmethyl) -3 (2H) -isothiazolone, 6-Chloro, 5-dimethyl-benzothiazole, 2-Chloro-4,6-dimethylbenzothiazole, 2-Chloro-4,7-dimethylbenzothiazole, 2-Chloro-N- (5,6- , 2-dimethyl-n- (1,3-thiazol-2-yl) propanamide, 2-Chloro-5- (ethoxymethyl) thiazole, 3-Chloro-2- 2-Chloro-5-hydroxymethylthiazole, 2-Chloro-5- (methoxymethyl) thiazole, 7-methylthiazole, 2- Chloro-5-methyl-2H-1,4-benzothiazin-3 (4H) -one, 5-Chloro-6- 2-Chloro-6-methylbenzothiazole, 2-Chloromethyl-benzothiazole, 5- chloromethylbenzothiazole, 2- 3-Chloro-2-methylbenzothiazole, 3- (Chloromethyl) -2 (3H) benzothiazolone, 7-Chloro-4-methyl- 2-ylamine, 6-Chloro-4-methylbenzothiazol-2-ylamine, 6-Chloro-3-methyl-3H-benzothiazol-2-ylideneamine, 2-Chloro-6- 1-methylethyl) benzothiazole, 5- (Chloromethyl) -4-ethyl-2-methyl-1,3-thiazole, 4- (Chloromethyl) isopropylthiazole, 5-Chloro-2-methyl-4-isothiazolin-3-one, 5-Chloro-2-methyl-4-isothiazolin-3-one calcium chloride, 5-Chloro-2-methyl- 2- (3-methylphenyl) -1,3-thiazole, 4- (Chloromethyl) -2- (2-methylphenyl) -1,3-thiazole, 4- 4-methylphenyl) -1,3-thiazole, 4- (Chloromethyl) -2-methyl-1,3-thiazole, 5-Ch 3-Chloro-5- (4-methylphenyl) - (4,5-dihydrothiazol-2-yl) 4-carbonitrile, 4- (Chloromethyl) -2-phenyl-1,3-thiazole, 4- (Chloromethyl) -2-propyl-1,3-thiazole, 5-Chloro-2- 4-methylthiazole, 2-Chloro-5-methylthiazole, 4- (Chloromethyl) -2-thiazolamine, 2- (Chloromethyl) -thiazole, 2-Chloro-4- 2-Chloro-4-methylthiazole-5-sulfonamide, 2-Chloro-4-methylthiazole-5-sulfonamide, 4- 2-chloro-4-methyl-thiazole-5-sulfonyl chloride, 2-Chloro-N- (4-methyl- benzothiazole, 4- (4-Chlorophenyl) -5-ethyl-1,3-thiazol-2-amine, 3- (2-Chloro-2- phenylethyl) -2-thiazolidinine, 2- (4- 2H-isothiazolone, 4- (3-Chlorophenyl) -5-methyl-1,3-thiazol-2-amine, 4- (4-Chlorophenyl) -5- - (4-Chloro-phenyl) -2-methyl-thiazole, trans-5- (4-Chlorophenyl) -4-methyl- 2- thiazolidone, 2-Chloro-4- (trifluoromethyl) benzothiazole, 2-methyl-benzothiazole, 4- (2,4-dichlorophenyl) -5-methyl-1,3-benzothiazole, 2,6-dichloro-4- -thiazol-2-amine, 3-Ethoxy-5-chloromethylisothiazole, and Methylchloroisothiazolinone.

In addition, the corrosion inhibitor comprising the benzocarboxylic acid or benzotriazole (1,2,3-benzotriazole)

Examples of the benzenecarboxylic acid include 5-amino-1,3-benzenedicarboxylic acid, 2-amino-1,4-benzenedicarboxylic acid, 3-amino-1,2-benzenedicarboxylic acid, 5-aminobenzene-1 , 3-dicarboxylic acid, 3-Amino-benzenethiophene-2-carboxylic acid, 1-Aminobenzene-2,4,5-tricarboxylic acid, 1-Aminobenzene-2,4,6-tricarboxylic acid, 1-Aminobenzene- , 5-tricarboxylic acid, 5-Amino-1,2,3-benzenetricarboxylic acid, 2-Aminobenzophenone-2'-carboxylic acid, 5-Amino-1-benzothiophene-2-carboxylic acid, 4-Amino-2-fluorobenzenecarboxylic acid 2-morpholinobenzenecarboxylic acid, 2- (4-Aminophenoxy) benzenecarboxylic acid, Azobenzene-3,3'-dicarboxylic acid, Azobenzene-2-methoxybenzenecarboxylic acid, 4-amino- 4,4'-dicarboxylic acid, N-Benzanilide-4,4'-dicarboxylic acid, 1,2-Benzenedicarboxylic acid, 1,3-Benzenedicarboxylic acid, 1,4-Benzenedicarboxylic acid, Benzene-1,3-dicarboxylic acid diallyl ester, 1,2-Benzenedicarboxylic acid didecyl ester 1,2-benzenedicarboxylic acid dinonyl ester, 1,2-benzenedicarboxylic acid dipentyl ester, benzenehexacarboxylic acid, benzenehexacarboxylic acid hexamethyl ester, 1,2,4,5-benzenetetracarboxylic acid, 1,2,4,5-benzenetetracarboxylic acid acid-d, benzene-1,2,3,4-tetracarboxylic acid, 1,2,3-benzeneetricarboxylic acid, 1,2,4- benzeneetricarboxylic acid, 1,3,5- Benzene-1,2,4-tricarboxylic acid, Benzene-1,3,5-tricarboxylic acid, 1,2,3-Benzenetricarboxylic acid 2-hydrate, 1-Benzhydrylazetane- 1-Benzhydrylazetidine-2-carboxylic acid, 1-Benzhydrylazetidine-3-carboxylic acid, (1H) -benzimidazole-7-carboxylic acid, 1H-Benzimidazole-2-carboxylic acid, 1H-Benzimidazole- -5-carboxylic acid, 1H-Benzimidazole-7-carboxylic acid, 2-Benzimidazolecarboxylic acid, 5-Benzimidazolecarboxylic acid, Benzimidazole-5carboxylic acid, Benzimidazole-5,6-dicarboxylic acid, 2,1-Benz isothiazole-3-carboxylic acid, 2,1-Benzisoxazole-3-carboxylic acid, 1-Benzocyclobutenecarboxylic acid, (R) -1,4-Benzodioxan- , 4-Benzodioxane-5-carboxylic acid, (R) -1,4-Benzodioxane-2-carboxylic acid, (S) -1,4-Benzodioxane- , 1,4-Benzodioxane-6-carboxylic acid, 1,3-Benzodioxole-2-carboxylic acid, 1,3-Benzodioxole-4-carboxylic acid, Benzo [1,3] dioxole- Benzofuran-2-carboxylic acid, Benzofurancarboxylic acid, Benzo (b) furan-2-carboxylic acid, Benzofuran-2-carboxylic acid, Benzofuran 3-carboxylic acid, Benzofuran-4-carboxylic acid, Benzofuran-6-carboxylic acid, Benzofuran-7-carboxylic acid, 2,3-Benzofurandicarboxylic acid, Benzofurazan- benzo [e] indole-2-carboxylic acid, Benzo [d] isoxazole-3-carboxylic acid, Benzo [d] oxazole-6- benzophenone-2-carboxylic acid, Benzophenone-4,4'-dicarboxylic acid, 3,3 ', 4,4'-Benzophenonetetracarboxylic acid, Benzophenone tetracarboxylic acid, Benzophenone-3,3' 4'-tetracarboxylic acid, Benzo [b] tellurophene-2-carboxylic acid, 1,2,3-benzothiazole-5-carboxylic acid, 1,3-benzothiazole- 3-carboxylic acid, 1-benzothiophene-5-carboxylic acid, Benzo [b] thiophene-2-carboxylic acid, Benzothiazole-5-carboxylic acid, Benzothiazole- benzo [b] thiophene-3-carboxylic acid, Benzo [b] thiophene-7-carboxylic acid, Benzo [b] thiophene-7-carboxylic acid, Benzothiophene- Benzothiazole-4-carboxylic acid, 5-benzoxazolecarboxylic acid, 3- (Benzoylamino) -2-thiophenecarboxylic acid, 1-Benzoyl-3-azetidinecarboxylic acid, 2-Benzoylcyclohexanecarboxylic acid, cis-2-Benzoylcyclohexane- -Benzo 1-Benzoylpiperidine-4-carboxylic acid, 2-Benzoyl-3-pyridinecarboxylic acid, 3-Benzoylpyridine-2-carboxylic acid, 1-Benzoylpyrrolidine 2-carboxylic acid, 3-benzoyl-4-quinolinecarboxylic acid, 3-benzoylquinoline-4-carboxylic acid, 3- benzoyl- 1-benzyl-azetidine-3-carboxylic acid, 1-Benzyl-azetidine-3-carboxylic acid, 1-Benzylazetidine-2-carboxylic acid amide, 1-Benzyl-4- 1-Benzylcyclobutanecarboxylic acid, 1-Benzylcyclobutanecarboxylic acid, 1-Benzylcyclobutanecarboxylic acid, 1-Benzylcyclohexanecarboxylic acid, 1-Benzylcyclopentanecarboxylic acid, 1-Benzylcyclopropanecarboxylic acid, Benzyl indoline-3-carboxylic acid, 1-Benzylindole-3-carboxylic acid, 2-Benzylisoindoline-4-carboxylic acid, 4-Benzyl-morpholine-2- 4-Benzyloxyindole-2-carboxylic acid, 5-Benzyloxy-2-indolecarboxylic acid, 3-benzyloxy-cyclobutanecarboxylic acid, 4-benzyloxyindole- 5-Benzyloxyindole-2-carboxylic acid, 6-Benzyloxy-1H-indole-2-carboxylic acid, 6-Benzyloxy-1H- indole- (Benzyloxy) pyridine-2-carboxylic acid, 8- (Benzyloxy) quinoline-7-carboxylic acid, (R) -4-Benzylpiperazine- 3-pyrrolidinecarboxylic acid, 2- (Benzylsulfanyl) benzenecarboxylic acid, 1-benzylpiperidine-4-carboxylic acid, , 2-benzyl-thiazolidine-4-carboxylic acid, 2-bibenzylcarboxylic acid, 5-bromobenzenecarboxylic acid, 4-bromo-1,3-benzenedicarboxylic acid, 4-bromobenzene-1,2-dicarboxylic acid, 3-benzenedicarboxylic acid, 7- 2-carboxylic acid, 5-Bromo-1-benzothiophene-2-carboxylic acid, 4-Bromo-1-benzothiophene- 1-benzothiophene-2-carboxylic acid, 5-Bromo-2-carboxylic acid, 5-Bromobenzo [b] thiophene- benzoxazolecarboxylic acid, 3- (tert-Butoxy) benzenecarboxylic acid, 5-tert-butyl-1,3-benzenedicarboxylic acid, 2-Chlorobenzofuran-5-carboxylic acid, 3-Chlorobenzofuran- carboxylic acid, 4'-Chlorobenzophenone-2-carboxylic acid, 3-Chlorobenzo [b] -2-thiophenecarboxylic acid, 3-Chlorobenzo [b] thiophene- , 5-Chloro-1-benzothiophene-2-carboxylic acid, 5-Chlorobenzo [b] thiophene-3-carboxylic acid, 6-Chloro-1- carboxylic acid, 7-Chlorobenzo [b] thiophene-2-carboxylic acid, 5-Chloro-2-benzoxazolecarbo dibenzofuran-4-carboxylic acid, 1,4-dibenzylpiperazine-2-carboxylic acid, 3,5-dibenzofuran-3-carboxylic acid, 3,5-dicarboxylic acid, 2-chloro-5-hydroxybenzene carboxylic acid, Dibromo-2-methoxybenzeneecarboxylic acid, 2,5-Difluoro-4-nitrobenzene carboxylic acid, 4,5-Difluoro-2-nitrobenzeneecarboxylic acid, 2,3- Dihydrobenzofuran- 2-benzenedicarboxylic acid, 4,6-Dinitro-1,3-benzenedicarboxylic acid, 2,5-Diphenylbenzene-1,4-dicarboxylic acid, 7-Ethoxybenzofuran-2carboxylic acid, 4-Fluorobenzene-1,3-dicarboxylic acid Benzothiophene-2-carboxylic acid, 7-fluoro-1-benzothiophene-2-carboxylic acid, 5-fluoro-1-benzothiophene- 2-carboxylic acid, 2-fluoro-4-nitrobenzeneecarboxylic acid, 3-fluoro-4-nitrobenzeneecarboxylic acid, 2-hydroxybenzenecarbothioic acid, tricarboxylic acid, 4-Hydroxybenzofuran-3-carboxylic acid Iodobenzene-1,2-dicarboxylic acid, 4-Iodo-1,2-benzenedicarboxylic acid, 4-Iodo-benzo [ methoxybenzofuran-2-carboxylic acid, 2- (4-Methoxybenzoyl) benzenecarboxylic acid, 2-methyl-1-benzothiophene- 3-methylbenzofuran-2-carboxylic acid, 3-methylbenzofuran-5-carboxylic acid, 6-methylbenzofuran-7-carboxylic acid, 4- benzenedicarboxylic acid, 5-methylbenzene-1,3-dicarboxylic acid, 2-carboxylic acid, 2-Methylbenzo [b] thiophene-7-carboxylic acid, 3-Methylbenzothiophene-2-carboxylic acid, 5-Methyl- 2-carboxylic acid, 2-Methyl-5-benzoxazolecarboxylic acid, 5-Morpholino-2-nitrobenzeneecarboxylic acid, (R) -N-Benzyl-piperidine- , 3-nitro-1,2-benzenedicarboxylic acid, 4-Nitro-1, 3-benzenedicarboxylic acid, 1-Nitrobenzene-3,4,5-tricarboxylic acid, 5-Nitro-1,2,3-benzenetricarboxylic acid, 5-Nitrobenzofuran- carboxylic acid, 2- (4-Nitrophenoxy) benzenecarboxylic acid, 3-Oxo-3H-benzo [f] chromene- 5-sulfo-1,2,4-benzenetricarboxylic acid, tetrafluorobenzene-1,4-dicarboxylic acid,

The benzotriazole system includes benzodiazepines such as 1-Allylbenzotriazole, 1-Aminobenzotriazole, 5-Aminobenzotriazole, 2-Aminotriazole, Aminotriazole, Bemotrizinol, Benthiazole, Benzimidazole, Benzimidazole, Benzobarbital, Benzoestrol, Benzofuranol Benzothiazole, benzothiazole, 4-benzothiazolole, 5-benzothiazolole, 2-benzothiazolone, 1H-1,2,3-benzotriazole, 1H-benzotriazole, benzotriazole, benzotriazole-d4 , Benzotrifloride, Benzotrifluoride, Benzoxazole, Benzoxazolone, Benzoylmetronidazole, Benzothiazolone, Benzothiazuron, 4-Benzylisothiazole, Betazole, Bismerthiazole, Bisoctrizole, 5-Bromobenzotriazole, Bumetrizole, Butyl benzotriazole, 5-Carboxybenzotriazole, 1-Chlorobenzotriazole, Clotrimazole, Demetridazole, Dimethridazole, Etisazole, Etridiazole, Fluotrimazole, Fuberidazole, 1-Hydroxybenzotriazole, 4-Hydroxybenzotriazole, Hydroxybenzotriazole oleate, 2-Iodobenzothiazole, Labetalol, Metronidazole, Neticonazole, 5-Nitrobenzotriazole, Octrizole, 1-Oxybenzotriazole, 5-methy l-1H-Thiazolo [4,5-d] -1,2,3-triazole, Tetrazole, Tolyltriazole, Triazolam And at least one selected from the group consisting of

In addition, the amino acid (Chelating Agent)

Glycine-13C, Glycine-2,2-d, Glycine-N, N, Od, Glycine-d, L-Glycine, N-Glycine, Z- Glycine, Z- Glycine amide, Glycine anhydride, Glycine benzyl ester, Glycine benzyl ester, Glycine-1-13C, Glycine-2-13C, Glycine citrate, Glycine cobalt salt, Glycine cresol red, Glycine cresol red, Glycine ethyl ester, Glycine-d2-N-Fmoc, Glycine fumarate, Glycine-13C2-15N, Glycine-15N, Glycine, Pharma, Glycine phosphate, Glycine, Reag., Glycine sodium salt, Glycine sulfate, Glycine thymol blue, Glycinexylidide-d, Glycinexylidine, Glycine, Glycine, Glycine, Glycine, Glycine, Glycine, Glycine, MTH-Glycine, Polyglycine, PTH-Glycine, TNP-Glycine and Triglycine.

The complexing agent, which is composed of the acrylamide-based compound and the aminomethylpropanol-based compound,

2-propenoic acid, 2-propenoic acid anhydride, 2-propenoic acid ethyl ester, homopolymer, 2-propenoic acid, homopolymer, 2-propenoic acid, 2-propenoic acid 2-isocyanatoethyl ester, 2- Propenoic acid, isodecyl ester, 2-propenoic acid 2-methylnonyl ester, 2-propenoic acid 1,1 '- (1,9-nonanediyl) ester, 2-propenoic acid 1,1' - , 2-Propenoic acid, polymer with propenal, L-2-Aminopropanoic acid, 2-Bromopropanoic acid, 2-Propenoic acid, 3-phenyl- (3Z) 2-Cyclopropylbenzoic acid, 2,2-Dipropylpentanoic acid, 3-Ethoxy-2-propenoic acid, 2-Fluoropropenoic acid, 3- (2-Furyl) -propenoic acid, 3-Indole propenoic acid, 2-Isopropoxybenzoic acid, 2 2-Methoxypropanoic acid, 2-Oxopropanoic acid, 3-Oxopropanoic acid, 3-Phenyl-2-propenoic acid, Propanoic acid, Propanoic acid, Propiolic acid, Propionic acid, 3-Hydroxybenzoic acid, 3-Isopropylbenzoic acid, 2-Propionylbenzoic acid, 4-Propionylbenzo propylbenzoic acid, 2-propylheptanoic acid, 3-propylheptanoic acid, 2-propylbenzoic acid, propionic acid, propionic acid, 4-propylbenzoic acid, 4-n-propylbenzoic acid, 2-Propylpentanoic acid, 2-Propylpentanoic acid, 2-Propylpentanoic acid, 2-Propyl-2-pentenoic acid, 2- (Propylthio) benzoic acid, 2-Propyloctanoic acid, 2-Propylpentanoic acid, polyacrylamide (PAM), acrylamide, N-Allylacrylamide, Diacrylamide, Glycarbylamide, Glycyclamide, N-Octylacrylamide, Polyacrylamide, Polyacrylamide, 2-methylpropan-2-ol, 2-amino-2-methylpropan-1-ol, 2-amino- Amino-2-methylpropanol, 8-bromothihophyllinate, 2-amino-2-methyl-1-propanol hydrochloride, 3-amino- (Aminomethyl) cyclopropanol, 1 -Amino-2-methylpropane, 2-amino-2-methylpropane and 1-amino-2-methylpropane-2-thiol.

In addition, it is preferable that the oxidizing agent is made of hydrogen peroxide and the diluting agent is made of deionized water.

The slurry composition for CMP of the present invention as described in detail above has a stable Cu removal rate and a stable Cu polishing rate while minimizing the dishing and erosion phenomenon even under the high speed CMP process as compared with the conventional polishing slurry. The present invention realizes maximization of the selective removal rate of the interlayer and does not cause defects on the surface to be polished.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Although the configuration of the present invention is described in connection with the embodiment, such an embodiment describes an example for realizing the present invention concretely, and does not limit or limit the technical idea on which the constitution of the present invention is based.

The slurry composition according to the present invention has many advantages over the conventional CMP slurry by reducing the erosion or dishing phenomenon and maintaining the stable removal rate of Cu, It is confirmed that the selective removal rate between Cu and Ta can be maximized.

The slurry composition of the present invention is characterized by containing 0.1 to 10 wt% of an abrasive, 0.01 to 1 wt% of an isothiazole dispersion and stabilizer, 0.01 to 1 wt% of a benzene carboxylic acid corrosion inhibitor, 0.01 to 15 wt% of a chelating agent, and 0.01 to 1 wt% of a complexing agent consisting of an acrylamide-based compound and an aminomethylpropanol-based compound, and an oxidizing agent and a diluent may be added.

In addition, the corrosion inhibitor may be added to the benzocarboxylic acid system by adding a benzotriazole system.

The abrasive is preferably made of colloidal silica or alumina having a cross-linked structure and an average particle diameter of 20 to 130 nm.

In the slurry composition of the present invention, an isothiazole-based dispersion and stabilizer, a benzene carboxylic acid-based or benzotriazole (1,2,3-benzotriazole) -based corrosion inhibitor, Amino Acid chelating agents and complexing agents comprising acrylamide and aminomethylpropanol may be selected from the group consisting of two or more various derivatives.

[ Example  One]

1 wt% colloidal silica abrasive, 0.1 wt% isothiazole dispersion and stabilizer, 0.5 wt% benzene carboxylic acid (1,2,3,4-butanetetracarboxylic acid) corrosion inhibitor, 12 wt% A diluent (DI Water) was diluted with a diluent (Amino Acid Chelating Agent), a 1 wt% complexing agent consisting of acrylamide and aminomethylpropanol, and 1 wt% of an oxidizing agent. Respectively.

≪ Polishing condition: Reflexion LK, BKM Recipe (In-situ, oxidizing agent 1 wt% Bulk Cu Slurry
Performance Cu Removal Rate > 5500 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 1000: 1 Dishing Controllable 550 ~ 650 Å @ 100㎛
Physical Properties pH 7.0 ± 0.5 Solid Content 7.00ą0.5wt%@POU Abrasive Size 70 nm ± 30

[ Example  2]

1 wt% colloidal silica abrasive, 0.1 wt% isothiazole dispersion and stabilizer, 0.4 wt% benzene carboxylic acid (1,2,3,4-butanetetracarboxylic acid) and benzotriazole 1 wt% anti-corrosion agent consisting of Benzotriazole: 6-Chloro-1-Methoxy-Benzotriazole, 12 wt% Amino Acid chelating agent, 1 wt% complexing agent consisting of acrylamide and aminomethyl propanol, And 1 wt% of an oxidizing agent was diluted with a diluent (DI Water) and evaluated under the following conditions, and this was compared with Example 1 above.

<Polishing Condition: Reflexion LK, BKM Recipe (In-situ, 1 wt% oxidizing agent> Bulk Cu Slurry Example 1 Example 2

Performance Cu Removal Rate > 5500 A / Min. @ 1.5 psi > 5000 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 1000: 1 > 900: 1 Dishing Controllable 550 ~ 650 Å @ 100㎛ Controllable 550 ~ 650 Å @ 100㎛ Physical Properties pH 7.0 ± 0.5 7.0 ± 0.5 Solid Content 7.00ą0.5wt%@POU 7.00ą0.5wt%@POU Abrasive Size 75 nm ± 30 75 nm ± 30

As can be seen from the above results, the performance of Example 1 is better than that of Example 2 in terms of Cu Removal Rate, Selectivity (Cu: Ta) and Dishing. This is because the use of a benzene carboxylic acid alone is better than that of a benzotriazole anticorrosion agent commonly used, and benzene carboxylic acid (1,2,3,4- Butanetetracarboxylic acid or 1,3,5-benzenetricarboxylic acid is an auxiliary function of Abrasive. It shows the increase of Cu Removal Rate and it is a function to replace Complex Agent. Selectivity (Cu: Ta) Can be seen as an increased effect.

[ Example  3]

In Example 2, 0.1 wt% corrosion of Benzotriazole (6-Chloro-1-Methoxy-Benzotriazole) with 0.4 wt% of Benzene Carboxylic Acid (1,2,3,4-Butanetetracarboxylic acid) The composition of the inhibitor was changed to 2,2 '- [(1H-Benzotriazol-1-ylmethyl) imino] bisethanol, which is a component of benzotriazole, and the remaining composition was evaluated in the same manner as in Example 2 under the following conditions.

<Polishing Condition: Reflexion LK, BKM Recipe (In-situ, 1 wt% oxidizing agent> Bulk Cu Slurry Example 2 Example 3
Performance Cu Removal Rate > 5000 A / Min. @ 1.5 psi > 4000 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 900: 1 > 600: 1 Dishing Controllable 550 ~ 650 Å
@ 100 탆 Controllable 700 ~ 850 Å
@ 100 탆 Physical Properties pH 7.0 ± 0.5 7.8 ± 0.5 Solid Content 7.00ą0.5wt%@POU 7.00ą0.5wt%@POU Abrasive Size 75 nm ± 30 75 nm ± 30

As can be seen from the above results, it can be seen that Embodiment 2 has better performance than Embodiment 3 in terms of Cu Removal Rate, Selectivity (Cu: Ta) and Dishing.

[ Example  4]

In the composition of Example 1, the complexing agent was changed to only acrylamide, and the remaining composition was evaluated in the same manner as in Example 1 under the following conditions.

<Polishing Condition: Reflexion LK, BKM Recipe (In-situ, 1 wt% oxidizing agent> Bulk Cu Slurry Example 1 Example 4
Performance Cu Removal Rate > 5500 A / Min. @ 1.5 psi > 4500 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 1000: 1 > 300: 1 Dishing Controllable 550 ~ 650 Å
@ 100 탆 Controllable 650 ~ 750 Å
@ 100 탆 Physical Properties pH 7.0 ± 0.5 7.0 ± 0.5 Solid Content 7.00ą0.5wt%@POU 7.00ą0.5wt%@POU Abrasive Size 75 nm ± 30 75 nm ± 30

As can be seen from the above results, it can be seen that the performance of Example 1 is better than that of Example 4 in terms of Cu Removal Rate and Selectivity (Cu: Ta). It can be seen that the acrylamide and aminomethylpropanol mixture used in the present invention increased the selectivity compared to the acrylamide used for improving the selectivity.

[ Example  5]

1,2,3,4-Butanetetracarboxylic acid was changed to 1,3,5-benzenetricarboxylic acid in the composition of Example 1, and the remaining composition was evaluated in the same manner as in Example 1 under the following conditions.

<Polishing Condition: Reflexion LK, BKM Recipe (In-situ, 1 wt% oxidizing agent> Bulk Cu Slurry Example 1 Example 5
Performance Cu Removal Rate > 5500 A / Min. @ 1.5 psi > 5000 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 1000: 1 > 1000: 1 Dishing Controllable 550 ~ 650 Å
@ 100 탆 Controllable 600 ~ 700 Å
@ 100 탆 Physical Properties pH 7.0 ± 0.5 7.0 ± 0.5 Solid Content 7.00ą0.5wt%@POU 7.00ą0.5wt%@POU Abrasive Size 75 nm ± 30 75 nm ± 30

As can be seen from the above results, in the aspect of Cu removal rate and dishing, the performance of Example 1 is better than that of Example 5. This suggests that benzene carboxylic acid (Benzene Carboxylic Acid) is a subsidiary function of Abrasive, which is different from that of Benzene Carboxylic Acid, and that the function of replacing Complex Agent is also different. It can be seen as an effect.

[ Example  6]

In the composition of Example 1, the chelating agent (Glycine) was changed to EDTA (ethylenediaminetetraacetic acid), and the remaining composition was evaluated in the same manner as in Example 1 under the following conditions.

&Lt; Polishing Condition: Reflexion LK, BKM Recipe (In-situ, oxidizing agent 1.0 wt% Bulk Cu Slurry Example 1 Example 3
Performance Cu Removal Rate > 5500 A / Min. @ 1.5 psi > 5500 A / Min. @ 1.5 psi Selectivity (Cu: Ta) > 1000: 1 > 1000: 1 Dishing Controllable 550 ~ 650 Å
@ 100 탆 Controllable 850 ~ 900 Å
@ 100 탆 Physical Properties pH 7.0 ± 0.5 7.0 ± 0.5 Solid Content 7.00ą0.5wt%@POU 7.00ą0.5wt%@POU Abrasive Size 75 nm ± 30 75 nm ± 30

As can be seen from the above results, it can be seen that the performance of Example 1 is better than that of Example 6 in terms of dishing. This is because even if the chelating agent is the same chelating agent, the Cu Removal Rate shows the same ability, but it can not be polished uniformly when Cu removal is performed depending on the ability of the chelating agent.

As described above, an optimal embodiment has been disclosed in the drawings and specification. Although specific terms have been employed herein, they are used for purposes of illustration only and are not intended to limit the scope of the invention as defined in the claims or the claims. Therefore, those skilled in the art will appreciate that various modifications and equivalent embodiments are possible without departing from the scope of the present invention. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims.

Claims (10)

A chelating agent (a chelating agent) is added in an amount of 0.1 to 10 wt% for an abrasive, 0.01 to 1 wt% of an isothiazole dispersion and stabilizer, 0.01 to 1 wt% of a benzene carboxylic acid corrosion inhibitor, 0.01 to 15 wt%, and 0.01 to 1 wt% of a complexing agent comprising acrylamide and aminomethylpropanol.
The method according to claim 1,
The abrasive material,
A slurry composition comprising a colloidal silica or alumina having a crosslinked structure and an average particle diameter of 20 to 130 nm.
delete The method according to claim 1,
The benzocarboxylic acid-based corrosion inhibitor may be, for example,
1,2,3,4-Butanetetracarboxylic acid or 1,3,5-benzenetricarboxylic acid.
delete delete delete delete The method according to claim 1,
The anti-
And a benzotriazole system is added to the benzene carboxylic acid system.
delete