KR101570174B1 - Substrate treating apparatus and method - Google Patents

Abstract

The present invention relates to an apparatus and a method for processing a substrate using plasma. In the case where pulsed mode high-frequency power is periodically turned on / off in time in the process chamber of the substrate processing apparatus, residual power of the variable capacitor is discharged when the pulse mode is off, And controls the power supplied to the electrodes. In addition, the present invention adjusts a capacitance by adjusting the impedance of a variable capacitor composed of a plurality of capacitors by interrupting a switch.

Description

[0001] SUBSTRATE TREATING APPARATUS AND METHOD [0002]

The present invention relates to a substrate processing apparatus and a method thereof, and more particularly, to a substrate processing apparatus using plasma and a method thereof.

A substrate processing apparatus using plasma is an apparatus using plasma formed by the power supplied from an electric power source to an electrode in a process chamber into a plasma state in a process chamber.

A DC power source or an AC power source is used as a power source used in a substrate processing apparatus using plasma. A high frequency power source such as a radio frequency is used as the AC power source.

A substrate processing apparatus that supplies electric power using a high frequency power source requires a device for matching the impedance between the high frequency power source and the process chamber. In the absence of the impedance matching device, most of the power is reflected by the power supply device I will come.

Generally, the impedance matching device is composed of a variable capacitor and an inductor. By adjusting the variable capacitor, the impedance matching is realized so that the impedance of the RF power source is equal to the impedance of the process chamber.

A variable capacitor of a general impedance matching device changes the impedance of the high frequency power source by changing the capacitance by adjusting the interval of the capacitors by using the driving means combined with the stepping motor and the gear stage.

However, since the capacitor is adjusted by the mechanical driving means, the adjustment preparation time is lengthened by the operation time of the driving means, and precise control is difficult. Particularly, when the high-frequency power source supplies power in the pulse mode, rapid impedance matching is difficult because the plasma state change is fast at high-speed pulses.

In addition, when the high-frequency power is supplied as a high-frequency power in a pulse mode in which the high-frequency power is cyclically turned on / off with respect to time, power remaining in the variable capacitor is supplied to the process chamber even when the pulse mode is off Occurs.

An object of the present invention is to efficiently supply high-frequency power to an electrode in a process chamber.

The present invention is not limited to the above-described problems, and other problems not mentioned can be clearly understood by those skilled in the art from the following description.

In order to achieve the above-mentioned object, according to an embodiment of the present invention, there is provided a substrate processing apparatus comprising: a process chamber; an electrode for generating a plasma from the gas supplied into the process chamber; a high frequency power source for outputting high frequency power to the electrode; A first transfer switch coupled to the power supply and provided to a first transmission line connecting the variable capacitor and the process chamber to match the impedance of the plasma within the process chamber with the impedance of the high frequency power; A second transfer switch provided on a second transmission line which is branched to be grounded, and a control circuit which outputs a control signal to the variable capacitor, and turns on / off the first transfer switch and the second transfer switch in accordance with the pulse mode of the high- off < / RTI > signal.

Further, the first transfer switch is located after the branch point between the first transmission line and the second transmission line.

The controller may output an on signal to the first transfer switch and an off signal to the second transfer switch when the pulse mode of the high frequency power source is on, And outputs an on signal to the first transfer switch and an on signal to the second transfer switch when the pulse mode of the first transfer switch is off.

The variable capacitor includes a plurality of capacitors and a capacitor control switch connected to each of the capacitors and turned on / off according to a control signal.

Further, the plurality of capacitors are grouped into n groups (n is a natural number).

Also, a plurality of capacitors in each group are provided and connected in parallel with each other.

Also, a plurality of capacitors in each group are provided and connected in parallel with each other.

Also, the capacitors in each group have the same capacitance.

Further, the number of capacitors in each group is nine.

Also, the capacitance ratio between the capacitors of the groups is 1:10:10 ² : 10 ³ .....: 10 ^{n- 1} .

Also, the capacitance ratio between the capacitors of the groups is 1:10:10 ² : 10 ³ .....: 10 ^{n- 1} .

The apparatus further includes an impedance meter for measuring the plasma of the process chamber and a detector for measuring electrical characteristics of the RF power source.

At least one of the first transfer switch, the second transfer switch, and the capacitor control switch is a pin diode.

In order to achieve the above-described object, there is provided a method of supplying a high-frequency power into a process chamber according to an embodiment of the present invention. In this method, when RF power supplied in a pulse mode is supplied to an electrode of the process chamber via a variable capacitor, The controller is operable to switch between a first transfer switch of the first transmission line connecting the variable capacitor and the process chamber in accordance with the pulse mode and a second transfer switch of the second transfer path branched from the first transfer line, (on / off) signal.

Also, the controller outputs an on signal to the first transfer switch when the pulse mode is on, outputs an off signal to the second transfer switch, and the pulse mode is off off state, outputs an off signal to the first transfer switch and an on signal to the second transfer switch.

In addition, the controller may determine a coarse frequency adjustment value of the variable capacitor according to a measured value of the electrical characteristics of the high frequency power source and a plasma impedance measurement value of the process chamber, and determine the coarse frequency adjustment value of the variable capacitor based on the capacitance adjustment value And outputs an on / off signal to a capacitor control switch of some capacitors of the capacitors of the variable capacitor.

When the capacitances of the variable capacitors are provided in a plurality of groups, when the capacitance adjustment value has a capacitance of 10 ^n-1 (where n is a natural number), the controller sets the capacitance adjustment value The capacitance of the first variable capacitor group is adjusted so that the capacitance of 10 digits is adjusted by the second variable capacitor group and the capacitance of 10 ² digits is adjusted by the third variable capacitor group .... 10 ^n-1 Wherein the capacitance of the variable capacitor group determines whether or not each variable capacitor group is operated so that the nth variable capacitor group is operated, and the capacitor control switch of the capacitors in the variable capacitor group whose operation is determined according to the capacitance adjustment value, ) Signal.

According to the present invention, high-frequency power can be effectively supplied to the electrodes in the process chamber.

According to the present invention, the high-frequency power supplied into the process chamber can be effectively controlled according to the pulse mode of the high-frequency power source.

1 and 2 are views schematically showing a substrate processing apparatus provided with a high-frequency power supply apparatus according to an embodiment of the present invention.
3-5 illustrate a substrate processing apparatus coupled to variable capacitors of various forms of an embodiment of the present invention.
6 and 7 are views showing a variable capacitor according to an embodiment of the present invention.
Figures 8-10 illustrate a substrate processing apparatus coupled to a process chamber provided with various types of electrodes of an embodiment of the present invention.

The embodiments of the present invention can be modified into various forms and the scope of the present invention should not be interpreted as being limited by the embodiments described below. The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Accordingly, the shapes of the components and the like in the drawings are exaggerated in order to emphasize a clearer description.

1 and 2 are views schematically showing a substrate processing apparatus provided with a high-frequency power supply apparatus according to an embodiment of the present invention.

Referring to FIGS. 1 and 2, the substrate processing apparatus 3000 of the present invention includes a process chamber 2000 and a high-frequency power supply apparatus 1000.

The substrate processing apparatus 3000 is a device for processing a substrate by supplying high-frequency power to the substrate in the process chamber 2000 and changing the state into a plasma state.

The high frequency power supply apparatus 1000 includes a high frequency power supply 1100, a high frequency transmission line 1200, a variable capacitor 1300, a first transfer switch 1212, a second transfer switch 1232, and a controller 1500 do.

The high frequency power source 1100 supplies the high frequency power to the electrode 2100 in the process chamber 2000 to change the electrons of the gas supplied into the process chamber 2000 into a plasma state. The RF power supply 1100 supplies power in a pulse mode that is periodically turned on / off with time.

The high-frequency transmission line 1200 transfers power generated in the high-frequency power source 1100 to the process chamber 2000 via the variable capacitor 1300. The high-frequency transmission line 1200 includes a first transmission line 1210 and a second transmission line 1230.

The first transmission line 1210 connects the variable capacitor 1300 and the process chamber 2000. The first transmission line 1210 is provided with a first transmission switch 1212. The first transfer switch 1212 supplies or cuts off high frequency power to the process chamber 2000 by switch on / off. The first transfer switch 1212 may be a pin diode.

The second transmission line 1230 branches at the first transmission line and is grounded at the ground plane. The second transmission line 1230 is provided with a second transmission switch 1232. The second transfer switch 1232 discharges power to the ground plane by switch on / off. The second transfer switch 1232 may be a pin diode.

The second transmission line 1230 may be branched at the first transmission line 1210 before power is applied to the first transmission switch 1212. That is, the first transmission switch 1212 may be located after the branch point between the first transmission line 1210 and the second transmission line 1230.

The variable capacitor 1300 matches the impedance of the high frequency power supply 1100 with the plasma impedance in the process chamber 2000.

The variable capacitor 1300 is connected to the high frequency transmission line 1200 and the capacitance is changed in accordance with a control signal transmitted from the controller 1500.

The variable capacitor 1300 may be a mechanical variable capacitor that adjusts the capacitance by adjusting the interval of the capacitor by a driving device such as a motor, or a digitally controlled variable capacitor that adjusts the capacitance by turning on / off a switch connected to each of the plurality of capacitors. Lt; / RTI >

3-5 illustrate a substrate processing apparatus coupled to variable capacitors of various forms of an embodiment of the present invention.

The variable capacitor shown in Figs. 3 to 5 relates to a digitally controlled variable capacitor that adjusts capacitance by on / off switch connected to each of a plurality of capacitors.

The variable capacitor 1300 includes a plurality of capacitors 1302 and a capacitor control switch 1304 connected to each capacitor.

The capacitor 1302 regulates the capacitance of the variable capacitor 1300 by a combination of the capacitances of the capacitors 1302 on which the capacitor control switch 1304 is turned on. The plurality of capacitors 1302 may be connected in parallel with each other. In this case, the capacitance of the variable capacitor 1300 can be obtained by simply summing the capacitance of the capacitor 1302 of the plurality of capacitors 1302 connected in parallel with the capacitor control switch 1304 on.

The capacitances of the plurality of capacitors 1302 may all have the same capacitance. Also, some of the plurality of capacitors 1302 may have different capacitances from each other. Further, each of the plurality of capacitors 1302 may have different capacitances from each other. In addition, the capacitances of the plurality of capacitors 1302 may sequentially increase in the order in which they are arranged. For example, the capacitance of the plurality of capacitors 1302 may increase by a factor of two. Thus, the capacitance of the variable capacitor 1300 can be precisely controlled by combining the capacitances of the plurality of capacitors 1302.

Also, the variable capacitor 1300 may be formed of n groups of capacitors 1302. That is, the variable capacitor 1300 is formed of n variable capacitor groups. Each variable capacitor group 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 is connected in parallel with each other. There may be one or more variable capacitors 1300 and 1400 of n groups.

The variable capacitor groups 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 provide from the first variable capacitor group 1310 to the nth variable capacitor group 13 [n] .

Each variable capacitor group 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 has different adjustable capacitance ranges.

When the capacitance to be adjusted in the variable capacitor 1300 has a capacitance of 10 ^n-1, the ^{first order} capacitance of the capacitance adjustment value is adjusted by the first variable capacitor group 1310, The capacitance of the second variable capacitor group 1320 is controlled by the third variable capacitor group 1320, the capacitance of the digit of 10 ² is controlled by the third variable capacitor group 1330, and the capacitance of the digit of 10 ^n-2 is the n-1 variable capacitor group (13 [n-1] 0 ) , and this control, the capacitance of the digit of the 10 ^n-1 is the n-th variable capacitor groups (13 [n] 0), each capacitor group (1310,1320, ... so as to be adjusted 13 [n-1] 0,13 [n] 0) determines the capacitance range to be adjusted. For example, when the capacitance adjustment value is 123, the first variable capacitor group controls a value of 3 by using a capacitor, the second variable capacitor group controls 20 by using a capacitor, and the third variable capacitor group uses a capacitor To adjust the value of 100.

6 and 7 are views showing a variable capacitor according to an embodiment of the present invention.

Referring to FIGS. 6 and 7, each variable capacitor group 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 includes capacitors 1312, ] 2,13 [n] 2) and the capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4.

The capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 are connected to the capacitor control switches 1314, -1] 4,13 [n] 4). The capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 may be composed of a plurality of capacitors 1312, ] 2) are connected to the capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4. Each of the variable capacitor groups 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 includes a plurality of capacitors 1312, 2, and capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4)

The capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 in the variable capacitor groups 1310, 1320, ... 13 [n-1] 0, 13 [n] May be connected in parallel with each other. The capacitance in each variable capacitor group 1310, 1320, ... 13 [n-1] 0, 13 [n] 0 is connected in parallel to a plurality of capacitors 1312, 13 [n-1] 4, 13 [n] 4) of the capacitors 1312, 1322, ... 13 [n] n-1] 2,13 [n] 2) can be obtained simply by summing the capacitances.

The capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 in the same group can have the same capacitance. Also, there may be nine capacitors in each variable capacitor group.

The first variable capacitor group may be provided with nine capacitors having a capacitance of 1 and the second variable capacitor group may be provided with nine capacitors having a capacitance of 10 and the third variable capacitor group may be provided with capacitors having a capacitance of 10 ² , The n-th variable capacitor group may be provided with nine capacitors having a capacitance of 10 ^n-2 , and the n-th variable capacitor group may be provided with nine capacitors having a capacitance of 10 ^n-1 .

Accordingly, the first variable capacitor group can adjust the capacitance from 1 to 9 by a combination of the capacitors having the capacitance control switch turned on among the capacitors having the capacitance 1, and the second variable capacitor group has the capacitance of 10 The third variable capacitor group is a combination of capacitors whose capacitance is 10 ^{2 and} which are switched on by a combination of capacitors 10 ² can be adjusted from a capacitance of up to 9 × 10 ^2, the n-th variable capacitance capacitor group 10 ^n-1 of the capacitor switch is turned on (on) combined with from 10 ^{n- 1} 9 × 10 ⁿ of the capacitor of the ^-1 . ≪ / RTI > For example, when the capacitance adjustment value is 123, the first variable capacitor group switches on three capacitors having a capacitance of 1 to adjust the value of 3, and the second variable capacitor group has two capacitors having a capacitance of 10 Switch on to adjust 20 and the third variable capacitor group to adjust 100 by switching on one capacitor with a capacitance of 100.

In this way, a plurality of capacitors 1312, 1322, ... 13 [n-1] 2,13 (n-1) in the variable capacitor groups 1310, 1320, [n] 2) can be combined to precisely control the capacitance value of the variable capacitor 1300.

The capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4 are electrically interrupted according to the control signal, and the capacitor control switches 1314, The capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2) supply power from the high frequency transmission line 1120 Receive. The capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4 may have various forms that operate electrically and a pin diode may be used.

The controller 1500 outputs a control signal of the variable capacitor 1300 and turns on / off the first transfer switch 1212 and the second transfer switch 1232 according to the pulse mode of the high frequency power source 1100 off signal.

The following description relates to the controller 1500 outputting a control signal to the variable capacitor 1300. [

The controller 1500 receives a value obtained by measuring an impedance in the process chamber 2000 or a value obtained by measuring an electrical characteristic of a high frequency power on the high frequency transmission line 1200 entering the high frequency power source 1100, And determines a capacitance adjustment value for matching. Here, the electrical characteristics of the high-frequency power measured on the high-frequency transmission line 1200 may be current, voltage, and their phase difference.

The controller 1500 sends an on / off control signal of the capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4 of the variable capacitor 1300 in response to the capacitance adjustment value do. The controller 1500 controls the capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 of the variable capacitors 1300 according to the capacitance adjustment value to switch among the capacitors 1312, ... 13 [n-1] 2,13 [n] 2). In particular, a plurality of capacitors 1312, 1322, ... 13 [n] in each variable capacitor group 1310, 1320, ... 13 [n-1] 0, 1] 2,13 [n] 2) among the selected capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 by selecting the capacitors to be connected to the high- The control signal is sent to the switch so that the capacitor control switches 1314, 1324, ..., 13 [n-1] 4, 13 [n]

The controller 1500 converts the analog signal of the measured value of the electrical characteristics of the high frequency transmission line 1200 into a digital signal and outputs the capacitor control switch 1314, 1324, ..., 13 [n-1] of the variable capacitor 1300, 4, 13 [n] 4). The capacitor control switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4 operate in accordance with the digital signals and the capacitors 1312, [n] 2) and the high frequency transmission line 1200.

The following description relates to the controller 1500 outputting an on / off signal to the first transfer switch 1212 and the second transfer switch 1232 in accordance with the pulse mode of the high frequency power source 1100 will be.

The controller 1500 receives the pulse mode of the RF power supply 1100 and outputs an on / off signal to the first transfer switch 1212 and the second transfer switch 1232 according to the pulse mode.

The controller 1500 outputs an on signal to the first transfer switch 1212 and an off signal to the second transfer switch 1312 when the pulse mode of the high frequency power source 1000 is on, ) Signal.

The controller 1500 outputs an off signal to the first transfer switch 1210 and an on signal to the second transfer switch 1230 when the pulse mode of the high frequency power source 1100 is off. ) Signal.

The impedance meter 1700 measures the plasma impedance in the process chamber 2000 and applies an impedance measurement value to the controller 1500.

The detector 1900 measures the electrical characteristics of the high frequency power of the high frequency transmission line and applies it to the controller 1500. Here, the electrical characteristics of the high-frequency power measured on the high-frequency transmission line 1200 may be current, voltage, and their phase difference.

The inductor (L) removes the DC component of the high frequency power output to the variable capacitor (1300).

Figures 8-10 illustrate a substrate processing apparatus coupled to a process chamber provided with various types of electrodes of an embodiment of the present invention.

The process chamber 2000 performs the process of processing the substrate using the plasma. The electrode 2100 supplies electric energy such that the gas introduced into the process chamber 2000 is ionized and changed into a plasma state. Electrode 2100 may be a capacitively coupled plasma source (CCP) consisting of two electrode plates parallel to process chamber 2000 or an Inductively Coupled Plasma Source (ICP) Plasma).

8 and 9, a capacitively coupled plasma source transfers electrical energy to the electrons of the gas introduced into the process chamber 2000 using a charge field. The capacitive coupled plasma source has a form in which a high frequency power source is connected to two electrode flat plates or a high frequency power source is connected only to an upper electrode flat plate among the two electrode flat plates.

Referring to FIG. 10, an inductively coupled plasma source delivers electrical energy to the electrons of a gas entering the process chamber 2000 using an induced electric field. The inductively coupled plasma source is separately connected to a plasma generator at the top of the process chamber 2000 to convert the introduced gas to a plasma state and to provide the plasma to the process chamber 2000 in a downstream stream manner.

The operation of one embodiment of the substrate processing apparatus of the present invention will be described in detail.

The high frequency power source 1100 supplies the high frequency power through the high frequency transmission line 1200 in the pulse mode. The controller 1500 receives the pulse mode of the high frequency power source 1100 and outputs a switch on / off signal to the first transfer switch 1212 and the second transfer switch 1232 according to the pulse mode. The switch on / off signals of the first transfer switch 1212 and the second transfer switch 1232 may be different from each other.

The controller 1500 outputs an on signal to the first transfer switch 1212 and turns off the second transfer switch 1312 when the pulse mode of the high frequency power source 1100 is on, And outputs a signal. The RF power supplied from the RF power supply 1100 is supplied to the electrode 2100 of the process chamber 2000 through the first transmission line 1210 via the variable capacitor 1300. [ At this time, the gas introduced into the process chamber 2000 receives electrical energy and changes to a plasma state. The process chamber 2000 into which the plasma is introduced performs a substrate processing process using a plasma. The impedance meter 1700 measures the plasma impedance in the process chamber 1160 and applies it to the controller 1500. Detector 1900 measures the electrical characteristics of high frequency transmission line 1200 and applies it to controller 1500. The controller 1500 determines the capacitance adjustment value according to the measured plasma impedance measurement value and the electrical characteristics of the high frequency power, for example, the current, the voltage, or the phase difference therebetween. Accordingly, the controller 1500 determines whether the variable capacitor 1300 operates according to the capacitance adjustment value. If the operation of the variable capacitor 1300 is determined, the capacitance is adjusted to match the impedance of the RF power supply 1100 with the plasma impedance in the process chamber 2000. Operation of the variable capacitor which adjusts the capacitance by a plurality of capacitors and a switch connected to each capacitor will be described later.

The controller 1500 outputs an off signal to the first transfer switch 1210 and turns on the second transfer switch 1230 when the pulse mode of the high frequency power source 1100 is off, And outputs a signal. Therefore, the high frequency power source 1100 does not supply the high frequency power, and the power remaining in the variable capacitor 1300 is discharged to the ground plane through the second transmission line 1230 and discharged. This is to prevent power from being supplied to the electrode 2100 of the process chamber 2000 due to the power remaining in the variable capacitor 1300 even when the high frequency power is not supplied from the high frequency power supply 1100.

When the variable capacitor 1300 includes a plurality of capacitors 1302 and a switch 1304 connected to the plurality of capacitors 1302, the controller 1500 selects a capacitor to be switched according to the capacitance adjustment value. The controller 1500 outputs a control signal, that is, a switch on / off signal, to the capacitor to be switched. The capacitance of the variable capacitor 1300 is adjusted by the switched capacitor so that the impedance of the RF power supply 1100 matches the plasma impedance in the process chamber 2000.

13 [n-1] 0, 13 [n] 0) according to the capacitance adjustment value when the variable capacitor 1300 is formed of n capacitor groups, 13 [n-1] 2, 13 [n] 2) having capacitances capable of being switched in the capacitors 1312, 1322,. The controller 1500 sends the digital control signal to the switches 1314, 1324, ... 13 [n-1] 4, 13 [n] 4 of the selected capacitor to activate the switch. The switched capacitors 1312, 1322, ... 13 [n-1] 2,13 [n] 2 satisfy the capacitance adjustment values required for plasma impedance matching according to the respective capacitance combinations.

In particular, the capacitors 1312, 1322, ... 13 [n-1] 2, 13 [n] in the respective variable capacitor groups 1310, 1320, ... 13 [n- 1] ] 2), when the capacitance adjustment value is 10 ^n-1 (n is a natural number), the first variable capacitor group 1310 controls the capacitance of the first digit of the capacitance adjustment value , A capacitance of 10 digits is controlled by the second variable capacitor group 1320, and a capacitance of 10 ² digits is controlled by a group of third variable capacitors 1330 .... A capacitance of 10 ^n-1 Determines whether each variable capacitor group is operated so that the nth variable capacitor group 13 [n] 0 adjusts. Thereafter, the capacitors 1312, 1322, ... 13 [n-1] to be switched in the variable capacitor group 1310, 1320, ... 13 [n- 1] ] 2,13 [n] 2). Thus, the impedance of the RF power supply 1100 and the plasma impedance in the process chamber 2000 are matched.

In an embodiment of the present invention, a plurality of capacitors 1302 of the variable capacitor 1300 are connected in parallel with each other. Therefore, it is easy to calculate the capacitance of the variable capacitor 1300. However, the present invention is not limited to this, and a plurality of capacitors 1302 of the variable capacitor 1300 may be connected in series with each other.

One embodiment of the present invention outputs a digital control signal to the first transfer switch 1212, the second transfer switch 1232 and the capacitor control switch 1304 in the controller 1500. However, the controller 1500 can output the analog control signal to the first transfer switch 1212, the second transfer switch 1232, and the capacitor control switch 1304 without limitation.

The foregoing description is merely illustrative of the technical idea of the present invention, and various changes and modifications may be made by those skilled in the art without departing from the essential characteristics of the present invention. Therefore, the embodiments disclosed in the present invention are intended to illustrate rather than limit the scope of the present invention, and the scope of the technical idea of the present invention is not limited by these embodiments. The scope of protection of the present invention should be construed according to the following claims, and all technical ideas within the scope of equivalents should be construed as falling within the scope of the present invention.

3000 substrate processing equipment
1000 high frequency power supply
1100 high frequency power supply 1200 high frequency transmission line
1210 first transmission line 1212 first transmission switch
1230 second transmission line 1232 second transmission switch
1300 variable capacitor
1302 Capacitor 1304 Capacitor control switch
1310, 1320, .. 13 [n-1] 0,13 [n] 0 variable capacitor group
1312, 1322, 13 [n-1] 2,13 [n] 2 capacitors
1310, 1320, .. 13 [n-1] 0,13 [n] 0 Capacitor control switch
1500 controller
1700 Impedance Meter 1900 Detector
2000 process chamber

Claims (17)

A process chamber;
An electrode for generating a plasma from the gas supplied into the process chamber;
A high frequency power source for outputting high frequency power to the electrode;
A variable capacitor connected to the high frequency power source for matching the impedance of the high frequency power with the impedance of the plasma in the process chamber;
A first transfer switch provided on a first transmission line connecting the variable capacitor and the process chamber;
A second transfer switch provided on a second transmission line that is branched and grounded in the first transmission line; And
And a controller for outputting a control signal to the variable capacitor and outputting an on / off signal to the first transfer switch and the second transfer switch in accordance with the pulse mode of the high frequency power supply. The method according to claim 1,
The first transfer switch
Wherein the substrate processing apparatus is located between a branch point between the first transmission line and the second transmission line and the process chamber. 3. The method of claim 2,
The controller
And outputs an on signal to the first transfer switch and an off signal to the second transfer switch when the pulse mode of the high frequency power source is on,
And outputs an off signal to the first transfer switch and an on signal to the second transfer switch when the pulse mode of the high frequency power source is off. The method of claim 3,
The variable capacitor
A plurality of capacitors; And
And a capacitor control switch connected to each of the capacitors and turned on / off according to a control signal. 5. The method of claim 4,
Wherein said plurality of capacitors are grouped into n groups (n is a natural number). 6. The method of claim 5,
Wherein a plurality of capacitors in each group are provided and connected to each other in parallel. The method according to claim 6,
Wherein a plurality of capacitors in each group are provided and connected to each other in parallel. 8. The method of claim 7,
Wherein the capacitors in each group have the same capacitance. 9. The method of claim 8,
Wherein the number of capacitors in each group is nine. 10. The method of claim 9,
And a capacitance ratio between the capacitors of the groups is 1:10:10 ² : 10 ³ .....: 10 ^n-1 . delete 11. The method according to any one of claims 1 to 10,
An impedance meter for measuring a plasma of the process chamber; And
Further comprising a sensor for measuring the electrical characteristics of the high frequency power supply. 11. The method according to any one of claims 1 to 10,
Wherein at least one of the first transfer switch, the second transfer switch, or the capacitor control switch is a pin diode. A method of processing a substrate by supplying high frequency power into the process chamber,
When supplying the high-frequency power supplied in the pulse mode to the electrode of the process chamber through the variable capacitor, the controller controls the first transfer switch of the first transmission line connecting the variable capacitor and the process chamber in accordance with the pulse mode, And outputs a switch on / off signal different from each other to a second transfer switch of a second transfer path branched from the transmission line. 15. The method of claim 14,
The controller
And outputs an on signal to the first transfer switch and an off signal to the second transfer switch when the pulse mode is on,
And outputs an off signal to the first transfer switch and an on signal to the second transfer switch when the pulse mode is off. 16. The method of claim 15,
Wherein the controller determines a capacitance adjustment value of the variable capacitor according to a measured value of the electrical characteristics of the RF power supply and a plasma impedance measurement value of the process chamber,
Determines whether the variable capacitor is operated according to the capacitance adjustment value,
And outputs an on / off signal to a capacitor control switch of some capacitors of the capacitors of the variable capacitor. 17. The method of claim 16,
When the capacitances of the variable capacitors are provided in a plurality of groups,
The controller
When the capacitance adjustment value has a capacitance of 10 ^n-1 (where n is a natural number), the capacitance of one digit of the capacitance adjustment value is adjusted by the first variable capacitor group, second variable capacitor of the variable group to control capacitor groups, of 10 ^2-digit variable capacitor capacitance third group is to adjust, ... capacitance of the digit of the 10 ^n-1 is to regulate the n-th variable capacitor group Determine whether it works,
And outputs an on / off signal to a capacitor control switch of capacitors in the variable capacitor group whose operation is determined according to the capacitance adjustment value.

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