KR101552667B1 - A baffle assembly and an apparatus for treating a substrate with the baffle - Google Patents

Abstract

Provided is a substrate treating apparatus. The substrate treating apparatus includes a process chamber, a substrate support unit, a gas supply unit, a plasma source, and a baffle assembly. The baffle assembly includes a first injection plate which is fixed to the inside of the chamber, and a second injection plate which is vertically combined to the first injection plate and rotates around the center of the the first injection plate. The baffle assembly controls the amount of gas or plasma for the regions of a substrate provided in the process chamber by the rotation angle of the second injection plate.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a baffle assembly and a substrate processing apparatus having the baffle assembly.

The present invention relates to a substrate processing apparatus, and more particularly, to an apparatus for processing a substrate using plasma or gas.

Various processes such as deposition, photo, etching, ashing, cleaning, and polishing are required on a semiconductor substrate such as a wafer in order to manufacture semiconductor devices. Many of these processes, such as deposition, etching, and ashing processes, process a semiconductor substrate, such as a wafer, using a plasma or gas within the chamber.

1 is a cross-sectional view of a substrate processing apparatus using a general plasma.

Referring to FIG. 1, a general substrate processing apparatus is configured such that a gas injected into a top lid 12 through a gas supply unit 11 is converted into a plasma by a plasma source 13. The plasma generated by the plasma source is supplied to the top of the substrate 15 through the baffle 14 in the top lead 12. [

In the substrate processing apparatus, a plurality of holes are formed in the baffle 14 to improve the uniformity of the plasma. However, the structure in the chamber 16 of the substrate processing apparatus, the flow of the plasma, and the like cause a problem that the uniformity of the plasma processing rate for the substrate 15 is lowered.

The baffle 14 can control the uniformity of the process in accordance with the change in the position and the number of the injection holes. However, in order to find the optimum condition in one equipment, it is generally necessary to replace a plurality of baffles having different positions and numbers of injection holes, so that time and cost are added.

In addition, the plasma profile changes when various process gases are used in the same equipment or in the same plasma generator. In this case, the use of a general baffle affects process uniformity.

SUMMARY OF THE INVENTION The present invention is directed to a substrate processing apparatus capable of adjusting an optimal plasma or gas spray uniformity in a single apparatus using one baffle assembly.

The present invention also provides a baffle assembly capable of controlling the optimal plasma or gas spray uniformity in various substrate processing apparatuses using one type of baffle assembly.

The problems to be solved by the present invention are not limited thereto, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

The present invention provides a substrate processing apparatus. According to one embodiment, a substrate processing apparatus includes a process chamber, a substrate support unit provided to support the substrate within the process chamber, and a first ejection plate positioned above the substrate support unit in the process chamber, A baffle assembly having a second injection plate and a drive unit for rotating the second injection plate about its center axis, and a gas supply unit for supplying gas to the upper part of the first injection plate and the second injection plate, The baffle assembly is provided to adjust the amount of gas supplied to any one of the central region and the edge region of the substrate according to the rotation angle of the second ejection plate.

The first injection plate has first fixing holes passing through the central region in the up and down direction, second fixing holes passing through the edge area of the first injection plate in the up and down direction, A first opening disposed in a central region of the second ejection plate and penetrating in a vertical direction and having a diameter corresponding to a central region of the first ejection plate and a first opening disposed in an edge region of the second ejection plate Wherein a central area of the second ejection plate is opposed to a central area of the first ejection plate and an edge area of the second ejection plate is opposed to a center area of the first ejection plate, Wherein when the second ejection plate is positioned at the first position and at a second position different from the first position, the total opening ratio of the second fixing hole is different from the first opening position It is provided to.

Alternatively, the second ejection plate has an inner diameter corresponding to the diameter of the central region of the first ejection plate, an outer diameter of the second ejection plate provided in a ring shape corresponding to the diameter of the first ejection plate, A plurality of variable holes may be formed so that the total opening ratio of the second fixing hole is different when the second ejection plate is located at the first position and at the second position different from the first position .

Alternatively, the second ejection plate may have a plurality of second openings arranged in the edge region of the second ejection plate so as to face the edge region of the first ejection plate, penetrating in the up and down direction, Wherein a center area of the second ejection plate is opposed to a central area of the first ejection plate and a center area of the edge area of the second ejection plate is opposed to a center area of the second ejection plate, Is opposite to the edge area of the first ejection plate and the total opening ratio of the first fixing hole when the second ejection plate is located at the third position and at the fourth position different from the third position is different .

In addition, the variable holes may be provided in a slit shape whose longitudinal direction is the radial direction of the second ejection plate.

The present invention provides a baffle assembly. According to one embodiment, the baffle assembly has a first injection plate and a second injection plate stacked on top of each other and a drive unit that rotates the center of the second injection plate about its axis, and the rotation of the second injection plate And is capable of adjusting the amount of gas supplied to either the central region or the edge region of the substrate depending on the angle.

The first injection plate has first fixing holes passing through the central region in the up and down direction, second fixing holes passing through the edge area of the first injection plate in the up and down direction, A first opening disposed in a central region of the second ejection plate and penetrating in a vertical direction and having a diameter corresponding to a central region of the first ejection plate and a first opening disposed in an edge region of the second ejection plate Wherein a central area of the second ejection plate is opposed to a central area of the first ejection plate and an edge area of the second ejection plate is opposed to a center area of the first ejection plate, Wherein the second fixing hole is opposed to an edge area of the second fixing plate and is located at a second position different from the first position when the second ejection plate is located at the first position, .

Alternatively, the second ejection plate has an inner diameter corresponding to the diameter of the central region of the first ejection plate, an outer diameter of the second ejection plate provided in a ring shape corresponding to the diameter of the first ejection plate, A plurality of variable holes are formed so that the total opening ratio of the second fixing hole is different when the second ejection plate is located at the first position and at the second position different from the first position.

Alternatively, the second ejection plate may have a plurality of second openings arranged in the edge region of the second ejection plate so as to face the edge region of the first ejection plate, penetrating in the up and down direction, Wherein a center area of the second ejection plate is opposed to a central area of the first ejection plate and a center area of the edge area of the second ejection plate is opposed to a center area of the second ejection plate, Is opposite to the edge area of the first ejection plate and the total opening ratio of the first fixing hole when the second ejection plate is located at the third position and at the fourth position different from the third position is different Lt; / RTI >

Further, the variable holes may be provided in a slit shape.

The substrate processing apparatus and the baffle assembly according to the embodiment of the present invention can control the amount of gas or plasma injection by the region of the gas injection plate during the substrate processing process.

Further, the substrate processing apparatus and the baffle assembly according to the embodiment of the present invention can control the gas or plasma injection amount in the entire area of the gas injection plate during the substrate processing process.

1 is a sectional view showing a general substrate processing apparatus.
2 is a cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.
FIG. 3 is a perspective view showing the drive unit and a part of the second ejection plate of FIG. 2;
Fig. 4 is a plan view showing the first ejection plate of Fig. 2; Fig.
Fig. 5 is a plan view showing the second ejection plate of Fig. 2. Fig.
6 and 7 are plan views showing a state in which the second fixing hole according to the rotation of the second ejection plate of FIG. 5 is opened and closed.
FIG. 8 is a plan view showing another embodiment of the second ejection plate of FIG. 2. FIG.
9 is a cross-sectional view showing another embodiment of the first ejection plate and the second ejection plate.
10 and 11 are plan views showing a state in which the first fixing hole according to the rotation of the second ejection plate of FIG. 8 is opened and closed.
FIG. 12 is a plan view showing still another embodiment of the second ejection plate of FIG. 2; FIG.
13 and 14 are plan views showing a state in which the second fixing hole according to the rotation of the second ejection plate of FIG. 12 is opened and closed.
Figures 15 through 17 are views showing other embodiments of the baffle assembly of Figure 2;
18 is a sectional view showing the substrate processing apparatus in which the second ejection plate is coupled to the lower end of the first ejection plate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the following embodiments. This embodiment is provided to more fully describe the present invention to those skilled in the art. Thus, the shape of the elements in the figures has been exaggerated to emphasize a clearer description.

In an embodiment of the present invention, the substrate 10 may be a semiconductor wafer. However, the present invention is not limited to this, and the substrate 10 may be another type of substrate such as a glass substrate.

In addition, in the embodiment of the present invention, the substrate processing apparatus may be an apparatus that performs a process such as ashing, deposition, or etching using plasma or gas.

Hereinafter, a substrate processing apparatus 1 according to an embodiment of the present invention will be described.

2 is a cross-sectional view showing a substrate processing apparatus 1 according to an embodiment of the present invention. 2, the substrate processing apparatus 1 has a process chamber 100, a substrate support unit 200, a gas supply unit 300, a plasma source 400, and a baffle assembly 500.

The process chamber 100 has a process chamber 120 and a plasma generation chamber 140. The process chamber 120 provides a space in which the substrate 10 is processed by the plasma. The plasma generating chamber 140 provides a space from which the plasma is generated from the process gas.

The treatment chamber 120 has a space in which an upper portion is opened. The treatment chamber 120 may be provided in a substantially cylindrical shape. A substrate inlet (not shown) is formed in a side wall of the processing chamber 120. The substrate 10 goes into and out of the processing chamber 120 through the substrate inlet. The substrate inlet (not shown) may be opened or closed by an opening / closing member such as a door (not shown). An exhaust hole 122 is formed in the bottom surface of the process chamber 120. An exhaust line 124 is connected to the exhaust hole 122. The exhaust line 124 is provided with a pump 126. The pump 126 regulates the pressure in the processing chamber 120 to the process pressure. Residual gas and reaction by-products in the processing chamber 120 are discharged to the outside of the processing chamber 120 through the exhaust line 124.

The plasma generation chamber 140 is located outside the process chamber 120. According to one example, the plasma generating chamber 140 is located at the top of the processing chamber 120 and is coupled to the processing chamber 120. The plasma generation chamber (140) has a discharge chamber (142) and a diffusion chamber (144). The discharge chamber 142 and the diffusion chamber 144 are sequentially provided in the vertical direction. The discharge chamber 142 has a hollow cylindrical shape. The space in the discharge chamber 142 is provided narrower than the space in the processing chamber 120 when viewed from above. Plasma is generated from the gas in the discharge chamber 142. The space in the diffusion chamber 144 has a gradually widening portion as it goes downward. The lower end of the diffusion chamber 144 is engaged with the upper end of the processing chamber 120, and a sealing member (not shown) is provided between the diffusion chamber 144 and the processing chamber 120 for sealing against the outside.

The process chamber 100 is provided with a conductive material. The process chamber 100 may be grounded via a ground line 123.

The substrate support unit 200 supports the substrate 10. The substrate support unit 200 has a support plate 220 and a support shaft 240.

The support plate 220 is disposed in the treatment chamber 120 and is provided in a disc shape. The support plate 220 is supported by a support shaft 240. The substrate 10 is placed on the upper surface of the support plate 220. An electrode (not shown) is provided inside the support plate 220, and the substrate 10 can be supported on the support plate 220 by an electrostatic force or a mechanical clamp.

The gas supply unit 300 may be provided at an upper portion of the discharge chamber 142. One or a plurality of gas supply units 300 may be provided. The gas supply unit 300 has a gas supply line 320, a gas storage unit 340, and a gas port 360.

The gas supply line 320 is connected to the gas port 360. The gas port 360 is coupled to the upper portion of the discharge chamber 142. The gas supplied through the gas port 360 flows into the discharge chamber 142 and is excited into the plasma in the discharge chamber 142.

The plasma source 400 generates a plasma from the gas supplied by the gas supply unit 300 in the discharge chamber 142. According to one example, the plasma source 400 may be an inductively coupled plasma source. The plasma source 400 has an antenna 420 and a power supply 440.

The antenna 420 is provided outside the discharge chamber 142 and is provided to surround the side surface of the discharge chamber 142 multiple times. One end of the antenna 420 is connected to the power supply 440, and the other end is grounded.

The power source 440 applies power to the antenna 420. According to an example, the power source 440 may apply a high frequency power to the antenna 420.

The baffle assembly 500 has a first ejection plate 520, a second ejection plate 540, and a drive unit 560. The baffle assembly 500 may be provided at the top of the process chamber 120. The first ejection plate 520 is disposed such that its bottom surface is opposed to the substrate 10 provided in the substrate supporting unit 200. The gas supplied from the gas supply unit 300 or the plasma generated by the plasma source 400 is injected by the baffle assembly 500 onto the top of the substrate support unit 200. The baffle assembly 500 can control the amount of gas or plasma supplied by the area of the substrate. For example, the baffle assembly 500 can adjust the relative supply of plasma to the central and edge regions of the substrate. The baffle assembly 500 may be grounded. The baffle assembly 500 may be provided to contact the process chamber 100 and may be grounded through the process chamber 100. The second ejection plate 540 and the first ejection plate 520 are vertically stacked. For example, the second ejection plate 540 may be provided on the upper portion of the first ejection plate 520.

The drive unit 560 is provided to rotate the second ejection plate 540 about its center. The driving unit 560 may be provided to penetrate the upper surface of the diffusion chamber 144 in the edge region of the upper surface of the diffusion chamber 144. The driving unit 560 has a driving gear 562, a connecting member 564, and a motor 566.

The driving gear 562 transmits the driving force transmitted by the connecting member 564 to the second ejection plate 540. 3 is a perspective view showing a part of the drive gear 562 and the second ejection plate 540 for explaining the drive gear 562 of FIG. 3, the drive gear 562 is provided to engage with the gear provided on the side surface of the second ejection plate 540. As shown in Fig. The drive gear 562 is provided in the form of a disk having gears formed on its side surfaces. A connecting member 564 is connected to the center of the upper surface of the driving gear 562.

The connecting member 564 transfers the driving force generated by the motor 566 to the driving gear 562. Referring again to FIG. 2, the connecting member 564 is provided to penetrate the upper surface of the diffusion chamber 144. A motor 566 is connected to the upper end of the connecting member 564.

The motor 566 generates a driving force for rotating the second ejection plate 540. The motor 566 may be provided at an edge portion of the upper surface of the diffusion chamber 144.

The drive unit 560 may be provided in a form different from that described above.

According to one embodiment, the first ejection plate 520 is provided to be fixed to the upper end of the process chamber 120. The first ejection plate 520 is provided with a larger diameter than the inner diameter of the upper end of the processing chamber 120.

4 is a top view of the first ejection plate 520. FIG. Referring to FIG. 4, the first ejection plate 520 is provided in a disc shape. A first fixing hole 522 and a second fixing hole 524 are formed in the first ejection plate 520. The first fixing hole 522 and the second fixing hole 524 are formed to penetrate the first ejection plate 520 in the vertical direction. The first fixing hole 522 and the second fixing hole 524 may have a substantially circular shape when viewed from above and may be formed to have the same size as each other. A plurality of first fixing holes 522 and second fixing holes 524 are provided.

The first fixing hole 522 is formed in the central region s11 of the first ejection plate 520. [ The second fixing hole 524 is formed in the edge area s12 of the first ejection plate 520. [ Some of the first fixing holes 522 and some of the second fixing holes 524 may be provided in a line in the radial direction of the first ejection plate 520.

A plurality of rows 528 in which some of the first fixing holes 522 and some of the second fixing holes 524 are arranged are provided. Each row 528 may be arranged at an angle with respect to the center of the first ejection plate 520.

5 is a top view of the second ejection plate 540. FIG. Referring to FIG. 5, the second ejection plate 540 is provided in a disc shape, and a first opening 544 is formed in the central region S21 so as to pass through in the up and down direction. That is, the second ejection plate 540 is provided in a ring shape. Gears may be provided on the side surface of the second ejection plate 540. The first opening 544 has a diameter corresponding to the central area S11 of the first ejection plate 520. [

A plurality of variable holes 542 are formed in the edge region S22 of the second ejection plate 540. [ The variable hole 542 is formed to penetrate the second ejection plate 540 in the vertical direction. The variable hole 542 has a slit shape as viewed from above. The variable hole 542 is provided in the radial direction of the second ejection plate 540 in its longitudinal direction. Each of the variable holes 542 may be arranged in a ring shape so as to surround the central region S21.

2, 4, and 5, the second ejection plate 540 is provided so that the lower surface of the first ejection plate 520 and the upper surface of the second ejection plate 540 face each other and are adjacent to each other. The second ejection plate 540 is provided so as to be rotatable about its center. The first opening 544 is opposed to the central region s11 of the first ejection plate 520. [ Therefore, the first fixing holes 522 are always opened entirely without being affected by the rotation of the second ejection plate 540.

One of the first ejection plate 520 and the second ejection plate 540 is provided with a ring-shaped guide 552 at its edge area and the other is provided with a guide 552 at its edge area, A guide hole 554 is provided. The guide 552 and the first guide hole 554 are provided so as to surround the opening and the ejection holes formed in the first ejection plate 520 and the second ejection plate 540. The guide 552 and the first guide hole 554 guide the second ejection plate to maintain the correct position when the second ejection plate 540 rotates.

Hereinafter, the manner in which the ejection holes of the first ejection plate 520 are opened and closed according to the rotation of the second ejection plate 540 of FIG. 5 will be described.

FIGS. 6 and 7 are views showing a state in which the first ejection plate 520 and the second ejection plate 540 of FIG. 5 are sequentially coupled in the vertical direction. 6 and 7, the central area S21 of the second ejection plate 540 faces the central area S11 of the first ejection plate 520, and the center area S21 of the second ejection plate 540 faces the center area S11 of the first ejection plate 520, (S22) is opposite to the edge area S12 of the first ejection plate 520. [

6 is a view showing a state where the injection holes of the first ejection plate 520 are opened and closed when the second ejection plate 540 is located at the first position. Referring to FIG. 6, when the second ejection plate 540 is located at the first position, the second fixing holes 524 are positioned so that the entire area of each of the holes faces the variable holes 542. Therefore, the entire area of the second fixing holes 524 is opened.

7 is a view showing a state where the injection holes of the first ejection plate 520 are opened and closed when the second ejection plate 540 is located at the second position. Referring to FIG. 7, the second position may be a position where the second ejection plate 540 is rotated at a predetermined angle with respect to the first position. When the second ejection plate 540 is located at the second position, the second fixing holes 524 are positioned such that a part of the area thereof is opposed to the variable holes 542. Therefore, a part of the area of the second fixing holes 524 is opened.

When the second ejection plate 540 is located at a position different from the first and second positions, the second fixing holes 524 may be provided so that the entirety thereof is not opposed to the variable holes 542. In this case, the entire area of the second fixing holes 524 is closed by the second ejection plate 540.

FIG. 8 is a view showing another embodiment of the second ejection plate 540 of FIG. Referring to FIG. 8, the second ejection plate 540 has a plurality of second openings 544 formed therein to vertically penetrate the edge region S22. The second openings 544 are provided in an arc shape. The second openings 544 are arranged in a ring shape so as to surround the central region S22. The second openings 544 are formed such that the entire first fixing holes 522 can be opened when the upper surface of the first ejection plate 520 and the lower surface of the second ejection plate 540 are opposed to each other .

A plurality of variable holes 542 are formed in the second ejection plate 540. The variable holes 542 are formed to penetrate the second ejection plate 540 in the vertical direction. The variable holes 542 have a slit shape when viewed from above. The variable holes 542 are provided in the radial direction of the second ejection plate 540 in the longitudinal direction. Each of the variable holes 542 may be arranged in a ring shape so as to surround the center of the second ejection plate 540.

9 is a sectional view when the upper surface of the first ejection plate 520 and the lower surface of the second ejection plate 540 of FIG. 8 are opposed to each other. 9, in addition to the above-mentioned ring-shaped guide, a protrusion 556 is provided in the central area of either the first ejection plate 520 or the second ejection plate 540 in FIG. 8, and the other one A second guide hole 558 may be provided so as to engage with the protrusion 556 in the central area thereof. The function of the protruding portion 556 and the second guide hole 558 is the same as the above-described guide and first guide hole.

Hereinafter, the manner in which the ejection holes of the first ejection plate 520 are opened and closed according to the rotation of the second ejection plate 540 of FIG. 8 will be described.

10 and 11 are views showing a state in which the first ejection plate 520 and the second ejection plate 540 of FIG. 8 are sequentially coupled in the vertical direction. 10 and 11, the central area S21 of the second ejection plate 540 faces the central area S11 of the first ejection plate 520, and the center area S21 of the second ejection plate 540 faces the center area S11 of the first ejection plate 520, (S22) is opposite to the edge area S12 of the first ejection plate 520. [ In this case, the second opening 546 is opposed to the edge region s12 of the first ejection plate 520. Therefore, the second fixing holes 522 are always opened entirely without being affected by the rotation of the second ejection plate 540.

10 is a view showing a state where the injection holes of the first ejection plate 520 are opened and closed when the second ejection plate 540 is located at the first position. 10, when the second ejection plate 540 is positioned at the first position, the first fixing holes 524 are positioned such that the entire area of each of the holes is opposed to the variable holes 542. [ Therefore, the entire area of the first fixing holes 524 is opened.

11 is a view showing a state in which the ejection holes of the first ejection plate 520 are opened and closed when the second ejection plate 540 is located at the second position. Referring to FIG. 11, the second position may be a position where the second ejection plate 540 is rotated at a predetermined angle with respect to the first position. When the second ejection plate 540 is located at the second position, the first fixing holes 524 are positioned such that a part of the area thereof is opposed to the variable holes 542. Therefore, a part of the area of the second fixing holes 524 is opened.

When the second ejection plate 540 is located at a position different from the first and second positions, the first fixing holes 524 may be provided so that the entirety thereof is not opposed to the variable holes 542. In this case, the entire area of the second fixing holes 524 is closed by the second ejection plate 540.

As described above, the baffle assembly 500 is provided to adjust the amount of gas or plasma supplied to the edge region of the substrate in accordance with the rotation angle of the second ejection plate 540.

12 is a view showing another embodiment of the second ejection plate 540. As shown in Fig. Referring to FIG. 12, the variable holes 542 include first variable holes 542a and second variable holes 542b. The variable holes 542 are provided in a generally circular shape. The first variable holes 542a are provided with a larger diameter than the second variable holes 542b. Some of the first variable holes 542a and some of the second variable holes 542b are provided in a line in the radial direction of the second ejection plate 540, respectively.

13 and 14 show the state in which the ejection holes of the first ejection plate 520 are opened and closed when the second ejection plate 540 of FIG. 12 is located at the first or second position, which is different from each other in accordance with rotation.

Referring to FIG. 13, when the second ejection plate 540 is positioned at the first position, the first variable holes 542a are provided to face the second fixing holes 544. The second fixing holes 544 are opened.

Referring to FIG. 14, when the second ejection plate 540 is located at the second position, the second variable holes 542b are provided so as to face the second fixing holes 544. In this case, since the diameter of the second variable holes 542b is smaller than the diameter of the first variable hole 542a, as compared with the case where the second injection plate 540 is located at the first position, The rate becomes smaller.

13 and 14, when the second ejection plate 540 is located at a position different from the first and second positions, the variable holes 542 are formed in the fixing holes of the second fixing hole 544 Only a part of the area is opposed, and the amount of the injection can be adjusted.

FIGS. 15-17 illustrate another embodiment of the baffle assembly 500 of FIG. Referring to FIG. 15, unlike the above-described embodiments, the driving unit 560 rotates the center of the second ejection plate 540 about its center by using magnetic force.

The baffle assembly 500 is similar in structure and function to the baffle assembly 500 of FIG. 3 except for the drive plate 562a and the second ejection plate 540.

The second ejection plate 540 is provided with a plurality of magnets on its side. The magnet may be a permanent magnet. Each of the magnets is provided so that a pole different from the direct-contact magnets is directed in the radial direction of the second ejection plate 540. Each of the magnets is arranged at an angle with respect to the center of the second ejection plate 540.

The drive plate 562a is provided at a position where the drive gear 562 of Fig. 3 is disposed. The drive plate 562a is provided in a disc shape. The drive plate 562a is provided with permanent magnets on its sides. Each of the magnets is provided so that a pole different from the direct-contact magnets is directed in the radial direction of the second ejection plate 540. Each of the magnets is arranged at an angle with respect to the center of the drive plate 562a.

The driving plate 562a is rotated about its center by the driving force transmitted by the driving shaft 564. The second ejection plate 540 is rotated at a constant angle by the magnetic force in accordance with the rotation of the drive plate 562a.

16, the drive unit may be provided as a handle 549 on the side of the second ejection plate 540. [ In this case, the second ejection plate 540 is rotated at a certain angle by the force of a person.

The drive unit 560 may be provided inside or outside the process chamber 100.

The drive unit may be provided in various forms besides the drive unit 560 of Figs. 3, 15 and 16 described above.

Referring to FIG. 17, a second ejection plate 540 is provided inside the first ejection plate 520.

The first ejection plate 520 is provided in a hollow disc shape. The first ejection plate 520 has a top surface 520a, a bottom surface 520b and a side surface 520c connecting the top surface 520a and the bottom surface 520b. A first fixing hole 522 and a second fixing hole 524 are formed on the upper surface 520a and the lower surface 520b. The first fixing hole 522 and the second fixing hole 524 are arranged and formed in the same manner as the first fixing hole 522 and the second fixing hole 524 in FIG. An opening 520d is formed in a side surface 520c of the first ejection plate 520. [ The second ejection plate 540 is provided so that its side gear is engaged with the drive gear 562 through the opening 520d.

The second ejection plate 540 is provided so that its shape, function, and the like are the same as the above-described embodiments.

18 is a view showing the substrate processing apparatus 2 in which the second ejection plate 540 is coupled to the lower portion of the first ejection plate 520. [ Referring to FIG. 18, the configuration, function, and configuration, etc. of the substrate processing apparatus 1 of FIG. 2 are substantially similar except for the baffle assembly 500.

When the second ejection plate 540 is coupled to the lower portion of the first ejection plate 520, the baffle assembly 500 may be provided at the lower end of the diffusion chamber 144. The configuration of the baffle assembly 500 is the same as that of the baffle assembly 500 of FIG. However, the first ejection plate 520 is provided to be fixed to the lower end of the diffusion chamber 144. The first ejection plate 520 and the second ejection plate 540 are sequentially provided in the vertical direction.

As described above, the substrate processing apparatuses 1 and 2 according to the present invention adjust the injection rate of each region under the baffle assembly 500 according to the type of process gas, process step or other process conditions, A gas or a plasma can be uniformly sprayed on the surface.

The foregoing detailed description is illustrative of the present invention. In addition, the foregoing is intended to illustrate and explain the preferred embodiments of the present invention, and the present invention may be used in various other combinations, modifications, and environments. That is, it is possible to make changes or modifications within the scope of the concept of the invention disclosed in this specification, within the scope of the disclosure, and / or within the skill and knowledge of the art. The embodiments described herein are intended to illustrate the best mode for implementing the technical idea of the present invention and various modifications required for specific applications and uses of the present invention are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. It is also to be understood that the appended claims are intended to cover such other embodiments.

1, 2: substrate processing apparatus
10: substrate
100: Process chamber
200: substrate holding unit
300: gas supply unit
400: plasma source
500: baffle assembly
520: first jet plate
540: second jet plate

Claims (18)

delete A process chamber;
A substrate support unit provided to support the substrate in the process chamber;
A baffle assembly having a first ejection plate and a second ejection plate located on top of the substrate supporting unit in the process chamber and having a first ejection plate and a second ejection plate laminated on top of each other and a drive unit for rotating the second ejection plate about its center axis;
And a gas supply unit for supplying a gas to an upper portion of the first ejection plate and the second ejection plate,
The baffle assembly includes:
Wherein the control unit controls the amount of gas supplied to one of the center region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
A first opening disposed in the central region of the second ejection plate and penetrating in the up and down direction and having a diameter corresponding to the central region of the first ejection plate; And a plurality of variable holes disposed in an edge region of the second ejection plate and penetrating in a vertical direction,
A central region of the second ejection plate is opposed to a central region of the first ejection plate,
An edge area of the second ejection plate is opposed to an edge area of the first ejection plate,
Wherein the second fixing hole is provided so that the total opening ratio of the second fixing hole is different when the second ejection plate is located at the first position and at the second position different from the first position. A process chamber;
A substrate support unit provided to support the substrate in the process chamber;
A baffle assembly having a first ejection plate and a second ejection plate located on top of the substrate supporting unit in the process chamber and having a first ejection plate and a second ejection plate laminated on top of each other and a drive unit for rotating the second ejection plate about its center axis;
And a gas supply unit for supplying a gas to an upper portion of the first ejection plate and the second ejection plate,
The baffle assembly includes:
Wherein the control unit controls the amount of gas supplied to one of the center region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
The inner diameter of the second ejection plate corresponds to the diameter of the central region of the first ejection plate and the outer diameter of the second ejection plate corresponds to the diameter of the first ejection plate,
A plurality of variable holes penetrating in the vertical direction are formed,
Wherein the second fixing hole is provided so that the total opening ratio of the second fixing hole is different when the second ejection plate is located at the first position and at the second position different from the first position. A process chamber;
A substrate support unit provided to support the substrate in the process chamber;
A baffle assembly having a first ejection plate and a second ejection plate located on top of the substrate supporting unit in the process chamber and having a first ejection plate and a second ejection plate laminated on top of each other and a drive unit for rotating the second ejection plate about its center axis;
And a gas supply unit for supplying a gas to an upper portion of the first ejection plate and the second ejection plate,
The baffle assembly includes:
Wherein the control unit controls the amount of gas supplied to one of the center region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
The second ejection plate includes a plurality of second openings arranged in an edge region of the second ejection plate so as to face the edge region of the first ejection plate and penetrating in the vertical direction and having a arc shape; And a plurality of variable holes penetrating in a vertical direction in a central region of the second ejection plate,
The central region of the second ejection plate is opposed to the central region of the first ejection plate,
An edge region of the second ejection plate is opposed to an edge region of the first ejection plate,
Wherein the first ejection plate is provided so that the total opening ratio of the first fixing hole when the second ejection plate is located at the third position and the fourth position when the second ejection plate is located at the fourth position different from the third position are different. The method according to any one of claims 2 to 5,
Wherein the variable holes are provided in a slit shape. 6. The method of claim 5,
Wherein the variable holes are provided in a radial direction of the second ejection plate in a longitudinal direction thereof. The method according to claim 6,
Wherein the fixing holes are provided in a circular shape. The method according to any one of claims 2 to 5,
Wherein one of the first ejection plate and the second ejection plate is provided with a ring-shaped guide in an edge region thereof and the other is provided with a first guide hole provided in an edge region thereof so as to be engaged with the guide, Device. 5. The method of claim 4,
Wherein at least one of the first ejection plate and the second ejection plate is provided with a protrusion at a center region thereof and the other of the second ejection plate and the second ejection plate is provided with a second guide hole provided at a central region thereof to be engaged with the protrusion. The method according to any one of claims 2 to 4,
The second ejection plate is provided with a gear at its side end,
The driving unit includes:
A driving gear provided to be engaged with the gear;
A motor generating a driving force for rotating the second ejection plate;
And a connecting member for transmitting the driving force generated by the motor to the driving gear. The method according to any one of claims 2 to 4,
The driving unit includes:
And is provided to rotate the center of the second ejection plate about its axis by using a magnetic force. 5. The method according to any one of claims 2 to 4,
Wherein the drive unit is a knob provided at a side end portion of the second ejection plate. 5. The method according to any one of claims 2 to 4,
Wherein the second ejection plate is provided on an upper portion of the first ejection plate. delete A first injection plate and a second injection plate stacked one above the other;
And a drive unit for rotating the second ejection plate about its center,
Wherein the second ejection plate is provided to adjust the amount of gas supplied to one of the central region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
A first opening disposed in the central region of the second ejection plate and penetrating in the up and down direction and having a diameter corresponding to the central region of the first ejection plate; And a plurality of variable holes arranged in the edge region of the second ejection plate and penetrating in the vertical direction,
A central region of the second ejection plate is opposed to a central region of the first ejection plate,
An edge area of the second ejection plate is opposed to an edge area of the first ejection plate,
Wherein a total opening ratio of the second fixing hole is different when the second ejection plate is located at a first position and at a second position different from the first position. A first injection plate and a second injection plate stacked one above the other;
And a drive unit for rotating the second ejection plate about its center,
Wherein the second ejection plate is provided to adjust the amount of gas supplied to one of the central region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
The inner diameter of the second ejection plate corresponds to the diameter of the central region of the first ejection plate and the outer diameter of the second ejection plate corresponds to the diameter of the first ejection plate,
A plurality of variable holes penetrating in the vertical direction are formed,
Wherein a total opening ratio of the second fixing hole is different when the second ejection plate is located at a first position and at a second position different from the first position. A first injection plate and a second injection plate stacked one above the other;
And a drive unit for rotating the second ejection plate about its center,
Wherein the second ejection plate is provided to adjust the amount of gas supplied to one of the central region and the edge region of the substrate according to the rotation angle of the second ejection plate,
Wherein a first fixing hole is formed in a central region of the first ejection plate in a vertical direction and second fixing holes are formed in an edge region of the first ejection plate in a vertical direction,
The second ejection plate includes a plurality of second openings arranged in an edge region of the second ejection plate so as to face the edge region of the first ejection plate and penetrating in the vertical direction and having a arc shape; And a plurality of variable holes penetrating in a vertical direction in a central region of the second ejection plate,
The central region of the second ejection plate is opposed to the central region of the first ejection plate,
An edge region of the second ejection plate is opposed to an edge region of the first ejection plate,
Wherein a total opening ratio of the first fixing hole when the second ejection plate is located at the third position and a fourth position different from the third position are provided to be different from each other. 18. The method according to any one of claims 15 to 17,
Wherein the variable holes are provided in a slit shape.

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