KR101547189B1 - Inductively coupled plasma processing apparatus - Google Patents

Abstract

An inductively coupled plasma processing apparatus is disclosed in which a lead frame is not exposed to a processing space inside a chamber.
An inductively coupled plasma processing apparatus according to the present invention includes a chamber having an upper surface opened, a window disposed above the chamber, an antenna source disposed above the window, a lead frame supported on an upper surface of the chamber, A clean kit disposed below the window, and a shield for preventing the lead frame from being exposed to the inside of the chamber, thereby reducing the installation number of the clean kit and simplifying the installation and maintenance of the equipment.

Description

[0001] The present invention relates to an inductively coupled plasma processing apparatus,

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an inductively coupled plasma processing apparatus, and more particularly, to an inductively coupled plasma processing apparatus for performing plasma processing on a substrate to be used for a display device, a semiconductor device, or the like.

The inductively coupled plasma processing apparatus includes a chamber in which a substrate to be processed is accommodated, a dielectric window disposed on an upper portion of the chamber, and an antenna disposed on the upper side of the window. In the inductively coupled plasma processing apparatus, a process gas is supplied into the chamber, and when a high frequency power is applied to the antenna, an inductively coupled plasma is generated in the chamber. The substrate to be processed can be etched or deposited by inductively coupled plasma generated in this way.

Here, a clean kit may be installed under the window. The clean kit prevents deposits and particles inside the chamber from depositing on the window and simplifies the replacement of the window, thereby reducing the inconvenience of window cleaning. The clean kit can also protect windows made of relatively expensive quartz from impacts and the like.

On the other hand, as the size of the substrate becomes larger and the size of the apparatus becomes larger, a plurality of regions are partitioned inside the frame supporting the window, and the window and the clean kit can be installed so as to correspond to the respective regions.

At this time, since a plurality of clean kits are disposed, even if a clean kit is closely attached, fine gaps are formed between the plurality of clean kits and the frame can be exposed toward the inside of the chamber through the plurality of clean kits.

As described above, when a plurality of clean kits are combined and a minute gap is formed between the plurality of clean kits, the following problems may occur.

First, there is a problem that the number of bolts for fastening a plurality of clean kits to the lead frame increases, and the number of installation steps for coupling the plurality of clean kits to the lead frame increases.

Second, plasma arcing occurs between a plurality of clean kits, and a part of each cleaning kit is damaged or broken.

Third, there is a problem in that a plurality of clean kits are deflected depending on the self weight of the plurality of clean kits or the vacuum exhaust in the chamber.

Korean Patent Publication No. 2010-0009613 (disclosed on Jan. 28, 2010)

It is an object of the present invention to provide an inductively coupled plasma processing apparatus in which a lead frame is not exposed to a processing space inside a chamber.

 An inductively coupled plasma processing apparatus according to the present invention includes a chamber having an upper surface opened, a window disposed above the chamber, an antenna source disposed above the window, a lead frame supported on an upper surface of the chamber, A clean kit disposed below the window, and a shield for preventing the lead frame from being exposed to the inside of the chamber.

The shielding portion may include a shielding bar disposed at a position corresponding to the lead frame and bound to the lead frame.

The shielding bar may be disposed at a lower portion of the cleat.

The shield bar may be provided with a clean kit support jaw supporting the clean kit.

The shielding bar may be disposed between the lead frame and the clean kit.

The clean kit may be provided with a shield bar supporting step for supporting the shielding bar.

A plurality of the shielding bars may be provided, and the shielding bar may be arranged to form a planar shape of the lead frame.

The plurality of shield bars may be partially overlapped or intersected with each other, and a step may be formed at a portion to which the plurality of shield bars are connected so that the plurality of shield bars form the same plane.

The shielding portion is supported by the cap holder so that the screw head of the tightening screw is not exposed to the inside of the chamber. The shielding portion may include a fastening screw penetrating through the shielding bar and fastened to the lead frame, a cap holder fastened to the lead frame by the tightening screw, And a shield cap surrounding the screw head of the fastening screw.

The plurality of shielding bars may be disposed such that the respective ends of the shielding bars are spaced apart from each other and supported by the cap holder.

The cap holder can prevent the lead frame from being exposed between the plurality of shield bars spaced from each other.

The material of the shielding bar and the shielding cap may be ceramic.

The inductive coupling plasma processing apparatus may further include a rib connected to the inside of the lead frame so that a plurality of regions are defined inside the lead frame, .

The plurality of shield bars may be disposed so that their respective ends pass through the edge of the clean kit.

INDUSTRIAL APPLICABILITY The inductively coupled plasma processing apparatus according to the present invention has the effect of simplifying the installation and maintenance of equipment by reducing the installation number of the clean kit.

In the inductively coupled plasma processing apparatus according to the present invention, plasma arc arcing is prevented from occurring between the clean kits, and the clean kit is firmly supported to improve the durability and life of the clean kit.

1 is a cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment.
2 is an exploded perspective view showing a lead frame, a rib, and a shielding portion of the inductively coupled plasma processing apparatus according to the first embodiment.
3 is a bottom view showing a lead frame, a rib and a shielding portion of the inductively coupled plasma processing apparatus according to the first embodiment.
4 is an enlarged cross-sectional view illustrating a connection state of a shield bar of the inductively coupled plasma processing apparatus according to the first embodiment.
5 is an enlarged cross-sectional view of the portion "I" shown in Fig. 1 of the inductively coupled plasma processing apparatus according to the first embodiment.
6 is a bottom view showing a lead frame, a rib, and a shielding portion of the inductively coupled plasma processing apparatus according to the second embodiment.
7 is an enlarged sectional view showing a part of the inductively coupled plasma generator according to the third embodiment.
8 is a cross-sectional view schematically showing an inductively coupled plasma generator according to a fourth embodiment.

The terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms and the inventor may appropriately define the concept of the term in order to best describe its invention It should be construed as meaning and concept consistent with the technical idea of the present invention. Therefore, the embodiments described in the present specification and the configurations shown in the drawings are only examples of the present invention, and are not intended to represent all of the technical ideas of the present invention, so that various equivalents and modifications may be made thereto .

Hereinafter, an inductively coupled plasma processing apparatus according to the present invention will be described with reference to the accompanying drawings.

First Embodiment

1 is a cross-sectional view schematically showing an inductively coupled plasma processing apparatus according to a first embodiment.

Referring to FIG. 1, an inductively coupled plasma processing apparatus 100 according to the first embodiment includes a chamber 110, a lead module 130, and an antenna source unit 150.

The chamber 110 is provided in a container shape opened to the upper side. A substrate support 111 for supporting the substrate 10 may be disposed inside the chamber 110. A chucking module 112 such as an electrostatic chuck for stably supporting the substrate 10 may be installed on the substrate support 111.

The lead module 130 is installed at the top of the chamber 110. The lead module 130 opens and closes the upper end of the chamber 110 so that the substrate 10 can be taken in or out through the upper end of the opened chamber 110 to enable a door valve system.

The lead module 130 may include a lead frame 131, a liner 132, a window 133, a lead plate 134, and a lead wall 135. The lead frame 131 is supported on the side wall of the chamber 110. The liner 132 may be provided as an insulator and may be installed between the lead frame 131 and the side wall of the chamber 110. The window 133 is provided inside the lead frame 131. The window 133 may be made of a dielectric such as quartz. The lead plate 134 is spaced upward from the lead frame 131. The lead wire 135 is disposed between the lead frame 131 and the lead plate 134 to support the lead plate 134 from the lead frame 131. [ The lead frame 131, the window 133, the lead plate 134, and the lead wall 135 define a space for installing the antenna source unit 150 in the lead module 130. [

The antenna source unit 150 may include at least one antenna for generating inductively coupled plasma (ICP) in a substrate processing space formed in the chamber 110.

Here, a rib 137 provided inside the lead module 130 is included. The ribs 137 prevent the lead module 10 from sagging as the size of the equipment increases as the substrate 10 becomes larger in size. The ribs 137 may be provided in a lattice form and may be coupled to the inside of the lead frame 131. Therefore, a plurality of regions are defined inside the lead frame 131, and the window 133 can be supported by the lead frame 131 and the ribs 137 in a plurality of regions.

Meanwhile, the inductively coupled plasma processing apparatus 100 according to the first embodiment includes a clean kit 170 installed under the lead module 130.

FIG. 2 is an exploded perspective view showing a lead frame, a rib and a shielding portion of the inductively coupled plasma processing apparatus according to the first embodiment, and FIG. 3 is a view showing the lead frame, the ribs and the shielding portion of the inductively coupled plasma processing apparatus according to the first embodiment. And FIG. 4 is an enlarged cross-sectional view illustrating a connection state of a shield bar of the inductively coupled plasma processing apparatus according to the first embodiment.

Referring to FIGS. 2 and 3, a clean kit 170 is disposed under each window 133. The clean kit 170 prevents the window 133 from being exposed to the inside of the chamber 110 to deposit particles on the window 133 and provides convenience of maintenance of the window 133. [ The clean kit 170 may be made of a ceramic material.

A shielding portion 200 is disposed under the clean kit 170. The shield 200 may include a frame shield 210 disposed along the planar shape of the lead frame 131 and a rib shield 200 disposed along the planar shape of the rib 137. The frame shielding part 200 and the rib shielding part 200 may include a plurality of shielding bars 230 connected to each other.

The shielding bar 230 is disposed under the window 133. The shielding bar 230 prevents the ribs 137 (or the lead frame 131) from being exposed to the inside of the chamber 110. The shielding bar 230 may be made of a ceramic material.

This shielding bar 230 may be located at a point beyond the edge of the clean kit 170 at its end. Accordingly, the plurality of clean kits 170 can be firmly supported by the shielding bar 230 and prevented from sagging, and the installation number of the fastening screws 240 to be described later can be reduced.

The plurality of shield bars 230 may be partially overlapped with each other or may be intersected with each other as the plurality of shield bars 230 are disposed in a plane form of the lead frame 131 or in a plane form of the ribs 137. At this time, a step 232 may be formed at a connection part of each of the shield bars 230 partially overlapped with each other or intersecting with each other so that the plurality of shield bars 230 have the same plane.

On the other hand, the shielding bar 230 may be bound to the rib 137 (or the lead frame 131).

5 is an enlarged cross-sectional view of the portion "I" shown in Fig. 1 of the inductively coupled plasma processing apparatus according to the first embodiment.

5, the frame shield 200 and the rib shield 200 are respectively connected to the shield bar 230, the fastening screw 240, the cap holder 250, the compression coil spring 260 and the shield cap 270 ).

The shielding bar 230 may be formed with a fastening hole 231 through which the fastening screw 240 passes and a clean kit support jaw 232 supporting the clean kit. The fastening screw 240 passes through the fastening hole 231 and is fastened to the rib 137 (or the lead frame 131). The cap holder 250 is fastened to the rib 137 (or the lead frame 131) when the shielding bar 230 is fastened to the rib 137 (or the lead frame 131) . The compression coil spring 260 is disposed inside the cap holder 250. The compression coil spring 260 is supported on the bottom surface of the rib 137 (or the lead frame 131) fastened to the rib 137 (or the lead frame 131) and the head of the fastening screw 240, I will exert.

A hook 251 is formed on the outer circumferential surface of the cap holder 250 and a hook 271 corresponding to the hook 251 may be formed on the inner circumferential surface of the shield cap 270. The shielding cap 270 can be firmly supported by the shielding cap 270 as the latching jaw 271 is inserted into the latching groove 251. The shield cap 270 is supported by the cap holder 250 to prevent the screw head of the fastening screw 240 from being exposed to the inside of the chamber 110. The shield cap 270 may be made of a ceramic material.

As described above, the inductively coupled plasma processing apparatus 100 according to the first embodiment is configured such that the fastening screws 240 are fastened to the ribs 137 (or the lead frame 131) 250 or the coil spring 260 and the rib 137 (or the lead frame 131) by the elastic force of the compression coil spring 260 and the rib 137 (or the lead frame 131) ) Is prevented from being exposed to the inside of the chamber 100.

Hereinafter, an inductively coupled plasma processing apparatus according to another embodiment of the present invention will be described. In the following description, components similar to those described in the inductively coupled plasma processing apparatus according to the first embodiment described above are denoted by the same reference numerals, and detailed description thereof will be omitted. Therefore, elements omitted from the detailed description in the following description should be understood with reference to the above description.

Second Embodiment

6 is a bottom view showing a lead frame, a rib, and a shielding portion of the inductively coupled plasma processing apparatus according to the second embodiment.

Referring to FIG. 6, the shielding bars 230a of the inductively coupled plasma processing apparatus according to the third embodiment may overlap each other or may not intersect with each other. That is, the ends of the shielding bars 230a are located at the corners of the clean kits 170a adjacent to each other, and the ends of the shielding bars 230a may be separated from each other.

At this time, the shield cap 270a can support the ends of the plurality of shield bars 230a located at the corners of the adjacent clean kits 170a. The shielding cap 270a may shield the lead frame 131 or the ribs 137 which may be exposed as the ends of the shielding bars 230a are separated from each other.

Third Embodiment

7 is an enlarged sectional view showing a part of the inductively coupled plasma generator according to the third embodiment.

Referring to Fig. 7, the shielding bar 230b may be disposed between the clean kit 170b and the rib 137 (or the lead frame 131). On the upper surface of the clean kit 170b, a support tab 171 for supporting the shield bar 230b may be formed.

The rib 137 (or the lead frame 131) may not be exposed to the inside of the chamber 110 because the shield bar 230b is seated on the support tab 171 formed in the clean kit 170b.

On the other hand, in the above description, an embodiment is described in which a plurality of regions are partitioned by the ribs 137, and a plurality of windows 133 and a plurality of clean kits 170 are provided. However, in the case of the fourth embodiment in which the construction of the rib 137 is omitted and a single window 133 and a single clean kit 170 are used as shown in FIG. 8, the shield 200 as described above is also installed .

As described above, in the inductively coupled plasma processing apparatus according to the present invention, the clean kit is supported by the shielding portion, and the lead frame (or rib) is prevented from being exposed to the inside of the chamber.

Therefore, the inductively coupled plasma processing apparatus according to the present invention can reduce the installation number of the clean kit, so that the clean kit can be easily installed.

Also, the inductively coupled plasma processing apparatus according to the present invention can prevent plasma arcing from occurring between the clean kits.

In addition, the inductively coupled plasma processing apparatus according to the present invention can prevent the squeezing of the plurality of clean kits due to the self weight of the clean kit or the vacuum exhaust in the chamber.

The embodiments of the present invention described above and shown in the drawings should not be construed as limiting the technical idea of the present invention. The scope of protection of the present invention is limited only by the matters described in the claims, and those skilled in the art will be able to modify the technical idea of the present invention in various forms. Accordingly, such improvements and modifications will fall within the scope of the present invention as long as they are obvious to those skilled in the art.

10: substrate 100: inductively coupled plasma processing apparatus
110: chamber 111: substrate support
130: lead module 131: lead frame
132: liner 133: window
134: Lead plate 135: Lead wall
137: rib 150: antenna source part
170: Clean kit 200: Shielding part
210: frame shielding part 220: rib shielding part
230: shielding bar 240: fastening screw
250: cap holder 260: compression coil spring
270: Shielding cap

Claims (14)

A chamber in which an upper surface is opened;
A window disposed above the chamber;
An antenna source unit disposed on the upper side of the window;
A lead frame supported on the upper surface of the chamber and supporting the window;
A clean kit disposed below the window to prevent the window from being exposed to the inside of the chamber;
And a shield for preventing the lead frame from being exposed to the inside of the chamber,
The shield
A shielding bar disposed at a position corresponding to the lead frame and bound to the lead frame;
A fastening screw passing through the shielding bar and fastened to the lead frame;
A cap holder coupled to the lead frame by the fastening screw;
A shield cap supported by the cap holder to surround the screw head of the tightening screw so that the screw head of the tightening screw is not exposed to the inside of the chamber;
And a clean kit supporting jaw for supporting the clean kit in such a manner as to surround an exposed surface of the clean kit rim toward the inside of the chamber to prevent the rim of the clean kit from being exposed to the inside of the chamber. Coupled plasma processing apparatus. delete The apparatus of claim 1, wherein the shielding bar
Wherein the clean kit is disposed at a lower portion of the clean kit. delete The apparatus of claim 1, wherein the shielding bar
Wherein the lead frame is disposed between the lead frame and the clean kit. 6. The method of claim 5,
Wherein the clean kit is provided with a shielding bar supporting step for supporting the shielding bar. The method according to claim 1,
Wherein the plurality of shield bars are arranged in a plane form of the lead frame. 8. The method of claim 7,
The plurality of shielding bars are partially overlapped or crossed each other,
Wherein a stepped portion is formed at a portion to which the plurality of shielding bars are connected so that the plurality of shielding bars form the same plane. delete 8. The method of claim 7,
Wherein the plurality of shielding bars are disposed so that their respective ends are spaced apart from the edge of the clean kit, and are supported by the cap holder. 11. The inductively coupled plasma processing apparatus of claim 10, wherein the cap holder prevents the lead frame from being exposed between the plurality of shield bars spaced from each other. The plasma processing apparatus according to claim 1, wherein the material of the shielding bar and the shielding cap is a ceramic. [3] The apparatus of claim 1, further comprising a rib connected to the inside of the lead frame to divide a plurality of regions inside the lead frame, wherein the shield bar includes a plurality of Wherein the inductively coupled plasma processing apparatus comprises: 14. The apparatus of claim 13, wherein the plurality of shielding bars
And each end is disposed to pass through the edge of the clean kit.

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