KR101510228B1 - Gas detection method and a gas sensor usinng terahertz, method for manufacturing the gas sensor and gas detection system - Google Patents
Gas detection method and a gas sensor usinng terahertz, method for manufacturing the gas sensor and gas detection system Download PDFInfo
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- KR101510228B1 KR101510228B1 KR20140104368A KR20140104368A KR101510228B1 KR 101510228 B1 KR101510228 B1 KR 101510228B1 KR 20140104368 A KR20140104368 A KR 20140104368A KR 20140104368 A KR20140104368 A KR 20140104368A KR 101510228 B1 KR101510228 B1 KR 101510228B1
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- 238000000034 method Methods 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000001514 detection method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 32
- 239000002070 nanowire Substances 0.000 claims description 40
- 239000000376 reactant Substances 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 11
- 229910052594 sapphire Inorganic materials 0.000 claims description 9
- 239000010980 sapphire Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
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- 229910020599 Co 3 O 4 Inorganic materials 0.000 claims description 5
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 5
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 5
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 5
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 5
- 238000000231 atomic layer deposition Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 4
- 238000001328 terahertz time-domain spectroscopy Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
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- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
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- 239000004065 semiconductor Substances 0.000 description 1
- 238000000527 sonication Methods 0.000 description 1
- 238000002336 sorption--desorption measurement Methods 0.000 description 1
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- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
- G01N21/3586—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation by Terahertz time domain spectroscopy [THz-TDS]
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/125—Composition of the body, e.g. the composition of its sensitive layer
- G01N27/127—Composition of the body, e.g. the composition of its sensitive layer comprising nanoparticles
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- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/128—Microapparatus
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Abstract
Description
The present invention relates to a gas sensing method using terahertz, a gas sensor for sensing gas using terahertz, a method for manufacturing a gas sensor, and a gas sensing system.
The present invention relates to a research conducted by the Ministry of Education, Science and Technology (MEST) as a part of a research project for supporting researchers (Task No. 1345160604, a terahertz-based multi-molecule detection system based on terahertz) It was derived from a research carried out as part of the technology development project (Project No. 1415122742, Development of high-density plasma technology for ultra-thin semiconductors and thin film deposition for flexible display processes).
The conventional gas sensor was to electrically measure the change in conductivity with adsorption / desorption of the reactant. Therefore, the conventional gas sensor has various problems such as low contact resistance in forming the junction of the reactant and the metal electrode, and there is a problem that other substances other than metal can not be directly applied.
It is an object of the present invention to provide a non-contact, non-polarized gas sensor and a gas sensing method.
The technical problem of the present invention is not limited to the above-mentioned technical problems, and other technical problems which are not mentioned can be clearly understood by those skilled in the art from the following description.
A gas sensing method according to an embodiment of the present invention includes: applying a terahertz pulse to a gas sensor having a gas reactive material formed on at least a portion thereof on a substrate; And detecting a terahertz pulse transmitted through the gas sensor.
In one embodiment, the step of calculating the conductivity of the gas reactive material using terahertz TDS (Time Domain Spectroscopy) from the detected terahertz pulse may be further included.
In one embodiment, the step of calculating the conductivity of the gaseous reacting material using the terahertz TDS may include the step of measuring the conductivity of the gaseous reacting material by passing only the terahertz pulse transmitted through the substrate on which the gaseous reacting material is formed, Conductivity can be calculated using a single terahertz pulse.
In one embodiment, applying the terahertz pulse may apply a terahertz pulse in the range of 1.5 to 2.5 THz. However, the present invention is not limited thereto, and the range may vary depending on the gas reactant.
A gas sensor according to an embodiment of the present invention is a gas sensor for detecting gas using terahertz, comprising: a substrate through which a terahertz pulse is transmitted; And a gas reactive material formed on at least a portion of the substrate and through which a terahertz pulse is transmitted.
In one embodiment, the gas sensor includes silicon nanowires formed on the substrate, and the gas reactive material may be formed on the silicon nanowires.
In one embodiment, the substrate may comprise at least one of a sapphire substrate or a diamond substrate grown by chemical vapor deposition (CVD).
In one embodiment, the gas reactant is gas reactants ZnO, Cr 2 O 3, Mn 2 O 3, Co 3 O 4, NiO, CuO, SrO, In 2 O 3, WO 3, TiO 2, V A gas sensor including at least one of Al 2 O 3 , Fe 2 O 3 , GeO 2 , Nb 2 O 5 , MoO 3 , Ta 2 O 5 , La 2 O 3 , CeO 2 and Nd 2 O 3 .
According to another aspect of the present invention, there is provided a method of manufacturing a gas sensor for sensing gas using terahertz, the method comprising: preparing a substrate through which a terahertz pulse is transmitted; And forming a gas reactive material that transmits a terahertz pulse to at least a portion of the substrate.
In one embodiment, the method further comprises forming a nanowire on the substrate prior to forming the gas reactive material, and depositing a gas reactive material on the nanowire by atomic layer deposition can do.
In one embodiment, the nanowire may include at least one of silicon nanowires, metal nanowires, metal oxide nanowires, and carbon nanotubes (CNTs).
In one embodiment, the substrate through which the terahertz pulse is transmitted may comprise a sapphire substrate.
In one embodiment, the gaseous reactant that transmits the terahertz pulse may comprise zinc oxide (ZnO).
In one embodiment, the method may further include performing a thermal oxidation and etching process on the nanowire to widen the surface area of the gas sensor.
A gas sensing system according to an embodiment of the present invention includes a terahertz pulse generator; A gas sensor through which a terahertz pulse is transmitted; And a detector for detecting the terahertz pulse transmitted through the gas sensor.
In one embodiment, the apparatus may further include a calculator for calculating a conductivity of the gas reactive material of the gas sensor using the detected terahertz pulse.
According to the embodiment of the present invention, since a gas sensor of a non-contact type and a non-electrode type can be manufactured and a metal used as an electrode is unnecessary, various materials can be applied to a gas sensor that detects gas using terahertz.
The effects of the present invention are not limited to the above-mentioned effects, and the effects not mentioned can be clearly understood by those skilled in the art from the present specification and the accompanying drawings.
FIG. 1 is a flow chart for explaining a
2 is a schematic diagram of a
3 is an image of a gas sensor according to an embodiment of the invention.
4 is a flowchart illustrating a method of manufacturing a gas sensor for detecting gas using terahertz according to an embodiment of the present invention.
FIG. 5 is an optical microscope image of a gas sensor that detects gas using terahertz according to an embodiment of the present invention. FIG.
FIG. 6 is a graph showing an air atmosphere of a gas sensor according to an embodiment of the present invention and NO 2 Graph showing the conductivity in a gas atmosphere.
7 is a graph showing the relationship between the air atmosphere of a gas sensor having improved surface roughness according to an embodiment of the present invention and the NO 2 Graph showing the conductivity in a gas atmosphere.
8 is a view for explaining a gas sensing system according to an embodiment of the present invention.
Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.
Although not defined, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not. The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention.
In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. Also, 'equipped' and 'possessed' should be interpreted in the same way.
The present invention relates to a non-contact, non-polarized gas sensor and a method for sensing gas using the gas sensor. According to the present invention, since a gas sensor of a non-contact type and a non-electrode type can be manufactured and a metal used as an electrode is not required, various materials can be applied to a gas sensor that detects gas using terahertz
The gas sensing method according to the present invention is a gas sensing method using terahertz, which transmits a terahertz pulse to a non-contact, non-polar gas sensor, detects a terahertz pulse transmitted through the gas sensor, will be. In one embodiment, the detected terahertz pulse may be used to measure the conductivity of the gas reactant of the gas sensor with a terahertz time domain spectroscopy (TDS). In one embodiment, the gas can be detected by measuring the conductivity of the gas reactant in the air atmosphere and the conductivity of the gas reactant in the gas atmosphere to sense the change in conductivity.
The gas sensor according to the present invention may include a gas reactive material that reacts with a gas to be detected on a substrate that transmits a terahertz pulse. In one embodiment, the gas sensor may include a nanowire on a substrate and a gas reactant deposited on the nanowire to increase surface area.
Hereinafter, the present invention will be described in more detail with reference to the drawings.
1 is a flow chart for explaining a gas sensing method using a terahertz according to an embodiment of the present invention.
As shown in FIG. 1, the
In step S110 of transmitting a terahertz pulse to the gas sensor, in one embodiment, the range of terahertz pulses passing through the gas sensor may be between 1.5 THz and 2.5 THz. However, the present invention is not limited thereto, and the range may vary depending on the gas reactant of the gas sensor.
In step S130 of calculating the conductivity of the gas sensor from the detected terahertz pulse, the conductivity can be calculated using terahertz TDS (Time Domain Spectroscopy).
The terahertz TDS is a technique for transmitting a terahertz pulse to a material and then converting the signal on the detected time axis into data on a frequency axis by a Fourier transform.
Accordingly, the conductivity of the gas sensor according to an embodiment of the present invention can be obtained by obtaining a terahertz pulse transmitted through a gas-responsive material of a gas sensor as a terahertz pulse with a terahertz TDS and substituting it into the following equation.
n is the refractive index of the substrate, Z 0 is the impedance in air, d is the thickness of the gas sensor,
Since the terahertz pulse transmitted only through the substrate and the terahertz pulse transmitted through the substrate and the gas reactive substance on the substrate are both required in the step S130 of calculating the conductivity of the gas sensor, The gas reactive material can be formed only on a part of the substrate. However, since the data on the terahertz pulse transmitted only through the substrate used in the gas sensor may be measured and existed beforehand, the gas sensor according to the present invention is not limited to a form in which the gas half is formed on only a part of the substrate.
2 is a schematic diagram of a
2, a
In one embodiment, the
3 is an image of a gas sensor according to an embodiment of the invention.
FIG. 3 is a graph showing a relationship between a gas sensor and a gas sensor, in which silicon nanowires are formed on a part of the
4 is a flowchart illustrating a
Referring to FIG. 4, a
In step S310 of forming a nanowire on the substrate, according to one embodiment of the present invention, coaxial or nanowire is transferred to a portion of the substrate. The transcription process was performed by repeating the process of dropping a solution of a vertically aligned coaxial nanowire sample into IPA (isopropyl alcohol) solution and dispersing it in a sonication on a sapphire substrate and evaporating IPA.
In the step of depositing a gas reactive material on the nanowire (S320), atomic layer deposition (ALD) was performed to deposit a gas reactant on the nanowire uniformly and in a large area.
In addition, thermal oxidation and etching processes were performed on the nanowires formed on the substrate after forming the nanowire (S310) according to an embodiment of the present invention. This process is a process for widening the surface area of the nanowire. Experiments have confirmed that the gas sensing effect of the gas sensor after such a post-treatment process is increased (see FIGS. 6 and 7).
FIG. 5 is an optical microscope image of a gas sensor that detects gas using terahertz according to an embodiment of the present invention. FIG. The left image in FIG. 5 is an enlarged image at a magnification of 4, and the right image is an enlarged image at a magnification of 50. Referring to FIG. 5, it can be seen that the gas reactant is uniformly deposited on the nanowire.
6 is a graph showing the relationship between the air atmosphere of the gas sensor according to the embodiment of the present invention and NO 2 Graph showing the conductivity in a gas atmosphere. In FIG. 6, the gas sensor used for the conductivity measurement is a silicon nanowire formed on a sapphire substrate and a gas sensor in which zinc oxide (ZnO) is deposited using the silicon nanowire-detailed gas reaction material.
Referring to Figure 6, the gas sensor according to an embodiment of the present invention, conductivity and NO 2 in the gas sensor in the air atmosphere in the terahertz range to 1.5THz 2.5THz range It can be confirmed that the conductivity of the gas sensor in the gas atmosphere is changed.
7 is a graph showing the relationship between the air atmosphere of a gas sensor having improved surface roughness according to an embodiment of the present invention and the NO 2 Graph showing the conductivity in a gas atmosphere. The gas sensor used in the measurement of conductivity in FIG. 7 includes a silicon nanowire formed on a sapphire substrate and a gas sensor having zinc oxide (ZnO) deposited thereon as a gas reactant after a post-treatment process of thermal oxidation and etching on the silicon nanowire to be.
Referring to FIG. 7, a gas sensor on which a gas reactive material having undergone thermal oxidation and etching post-treatment on a nanowire is deposited according to an embodiment of the present invention includes a gas sensor (see FIG. 6) It can be confirmed that the change of the conductivity is remarkably increased.
8 is a view for explaining a gas sensing system according to an embodiment of the present invention.
As shown in FIG. 8, the gas sensing system according to the present invention may include a terahertz generating unit, a gas sensor transmitting a terahertz pulse, and a detecting unit detecting a terahertz pulse transmitted through the gas sensor. In one embodiment, the gas sensing system may further comprise a calculator for calculating a conductivity of the gas reactive material of the gas sensor using the detected terahertz pulse.
In one embodiment, the calculator may calculate the conductivity of the gas reactive material of the gas sensor using terahertz time domain spectroscopy (TDS) from the detected terahertz pulse. In one embodiment, the calculator may calculate the terahertz pulse transmitted through the gas sensor of the gas sensor as terahertz TDS, and calculate the terahertz pulse of the frequency axis by substituting it into the following equation.
n is the refractive index of the substrate, Z 0 is the impedance in air, d is the thickness of the gas sensor,
It is to be understood that the above-described embodiments are provided to facilitate understanding of the present invention, and do not limit the scope of the present invention, and it is to be understood that various modifications may be made within the scope of the present invention. For example, each component shown in the embodiment of the present invention may be distributed and implemented, and conversely, a plurality of distributed components may be combined. Therefore, the technical protection scope of the present invention should be determined by the technical idea of the claims, and the technical protection scope of the present invention is not limited to the literary description of the claims, The invention of a category.
Claims (15)
Detecting a terahertz pulse transmitted through the gas sensor;
Calculating the conductivity of the gas reactive material from the detected terahertz pulse using terahertz time domain spectroscopy (TDS); And
And sensing the gas by comparing the calculated conductivity,
The gas sensor comprises:
Silicon nanowires formed on at least a portion of the substrate; And
And a gas reactive material formed on the silicon nanowire,
The gas reactants ZnO, Cr 2 O 3, Mn 2 O 3, Co 3 O 4, NiO, CuO, SrO, In 2 O 3, WO 3, TiO 2, V 2 O 3, Fe 2 O 3, GeO 2 , Nb 2 O 5 , MoO 3 , Ta 2 O 5 , La 2 O 3 , CeO 2 and Nd 2 O 3 ,
The step of calculating the conductivity of the gas reactive material using the terahertz TDS may include:
A terahertz pulse transmitted through the substrate on which the gas reactive material is formed, and a terahertz pulse transmitted only through the substrate on which the gas reactive material is not formed,
Comparing the conductivity and sensing the gas,
A gas sensing method for sensing a gas by comparing a conductivity of the gas reactive material calculated in an air atmosphere with a conductivity of the gas reactive material calculated in a reactive gas atmosphere.
Wherein applying the terahertz pulse comprises:
Wherein a terahertz pulse in the range of 1.5 to 2.5 THz is applied.
A substrate through which a terahertz pulse is transmitted;
Silicon nanowires formed on at least a portion of the substrate; And
And a gas reactive material formed on the silicon nanowire,
The gas reactants ZnO, Cr 2 O 3, Mn 2 O 3, Co 3 O 4, NiO, CuO, SrO, In 2 O 3, WO 3, TiO 2, V 2 O 3, Fe 2 O 3, GeO 2 , Nb 2 O 5 , MoO 3 , Ta 2 O 5 , La 2 O 3 , CeO 2 , and Nd 2 O 3 .
Wherein the substrate comprises at least one of a sapphire substrate or a diamond substrate grown by chemical vapor deposition (CVD).
Preparing a substrate through which a terahertz pulse is transmitted;
Forming a silicon nanowire on at least a portion of the substrate;
Performing thermal oxidation and etching processes on the silicon nanowires to increase the surface area of the gas sensor; And
Depositing a gas reactant on the silicon nanowire by atomic layer deposition,
The gas reactants ZnO, Cr 2 O 3, Mn 2 O 3, Co 3 O 4, NiO, CuO, SrO, In 2 O 3, WO 3, TiO 2, V 2 O 3, Fe 2 O 3, GeO 2 , Nb 2 O 5 , MoO 3 , Ta 2 O 5 , La 2 O 3 , CeO 2 , and Nd 2 O 3 .
Wherein the substrate that transmits the terahertz pulse senses gas using terahertz including at least one of a sapphire substrate or a diamond substrate grown by chemical vapor deposition (CVD).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115627455A (en) * | 2022-11-04 | 2023-01-20 | 南京工业职业技术大学 | Terahertz light-controlled nanowire growth autonomous modulation device and technology |
Citations (2)
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|---|---|---|---|---|
| JP2008510980A (en) | 2004-08-26 | 2008-04-10 | テラビュー リミテッド | Suppression of scattering-related characteristics by impulse waveform averaging across multiple sample points in terahertz time-domain spectroscopy |
| US20130087709A1 (en) * | 2011-10-07 | 2013-04-11 | Heidy Hodex Visbal Mendoza | Mercury gas sensing using terahertz time-domain spectroscopy |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008510980A (en) | 2004-08-26 | 2008-04-10 | テラビュー リミテッド | Suppression of scattering-related characteristics by impulse waveform averaging across multiple sample points in terahertz time-domain spectroscopy |
| US20130087709A1 (en) * | 2011-10-07 | 2013-04-11 | Heidy Hodex Visbal Mendoza | Mercury gas sensing using terahertz time-domain spectroscopy |
Non-Patent Citations (2)
| Title |
|---|
| LLOYD-HUGHES, J., et al. Journal of Infrared, Millimetre and Terahertz Waves, 2012., Vol.33, No.9, pages 871-925. * |
| MAZADY, A., et al. Solid-State Electronics, 2014.07.11., Vol.101, pages 8-12. * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115627455A (en) * | 2022-11-04 | 2023-01-20 | 南京工业职业技术大学 | Terahertz light-controlled nanowire growth autonomous modulation device and technology |
| CN115627455B (en) * | 2022-11-04 | 2023-08-08 | 南京工业职业技术大学 | Terahertz light-operated nanowire growth autonomous modulation device and technology |
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