KR101426886B1 - Controlling method and system for temperature of gas chiller for semiconductor and LCD manufacturing process - Google Patents

Controlling method and system for temperature of gas chiller for semiconductor and LCD manufacturing process Download PDF

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Publication number
KR101426886B1
KR101426886B1 KR1020130010189A KR20130010189A KR101426886B1 KR 101426886 B1 KR101426886 B1 KR 101426886B1 KR 1020130010189 A KR1020130010189 A KR 1020130010189A KR 20130010189 A KR20130010189 A KR 20130010189A KR 101426886 B1 KR101426886 B1 KR 101426886B1
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South Korea
Prior art keywords
working fluid
transfer line
introduced
temperature
electronic expansion
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KR1020130010189A
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Korean (ko)
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우범제
한명석
윤석문
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우범제
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring

Abstract

The present invention relates to a method for controlling the temperature of a semiconductor and LCD manufacturing processing equipment by the medium of gas, and more specifically, to a method for controlling the temperature of a semiconductor and LCD manufacturing equipment by the medium of gas that comprises the following steps: a first circulation step including the steps of introducing a predetermined working fluid, which is discharged from multiple pieces of process equipment, into a compressor through a first transfer line, discharging the working fluid, which is introduced into the compressor and pressed at a high temperature and pressure in order to be introduced into a condenser through a second transfer line, discharging the working fluid, which is introduced into the condenser and condensed in order to be introduced into a liquid receiver through a third transfer line, introducing the working fluid, which is introduced into the liquid receiver and temporarily stored in a first electronic expansion value through a fourth transfer line, and introducing the working fluid, which is introduced into the first electronic expansion value and adiabatically expanded, into the multiple pieces of process equipment through a fifth transfer line; and a second circulation step including the steps of branching the working fluid, which is pressed at a high temperature and pressure and transferred through the second transfer line, to be introduced into a second electronic expansion value through a sixth transfer line, transferring the working fluid, which is introduced into the second electronic expansion valve through a seventh transfer line in order to be introduced into the fifth transfer line. According to the method of the present invention, the temperature of multiple semiconductors and LCD manufacturing pieces of process equipment can be controlled at the same time by one temperature control device using gas, thereby reducing power consumption and maintenance costs compared to an existing temperature control method using liquid.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control method and a temperature control system for a semiconductor and LCD manufacturing process equipment using gas as a medium,

The present invention relates to a temperature control method for a semiconductor and LCD manufacturing process facility, and more particularly, to a temperature control device using a gas, without using a liquid cooling fluid, To a temperature control method and a temperature control system of a semiconductor and LCD manufacturing process facility using a gas as a medium to reduce power consumption and maintenance cost.

Generally, in the process of manufacturing semiconductors and LCDs, the internal temperature of the electrostatic chuck, the heater, and the chamber must be kept constant at all times, The equipment that plays the role of maintenance is called a chiller.

Such semiconductor and LCD process equipments are subjected to thermal load during the manufacturing process of semiconductors and the temperature rises. Semiconductor and LCD chillers are used to circulate the cooling fluid inside electrostatic chuck, heater and chamber by using a pump The heat load is removed by chiller to remove heat.

In this case, the semiconductor and LCD chiller can be classified into a low-temperature chiller and a high-temperature chiller according to the target cooling temperature of the cooling fluid recovered to the main body, and the low-temperature chiller generally uses a cooling cycle using a freon gas, And a high temperature chiller (or a heat exchanger type chiller) is a system for cooling a cooling fluid by using a predetermined refrigerant.

1 is a conceptual view schematically showing a temperature control system of a semiconductor and LCD manufacturing process facility using a conventional liquid medium.

Referring to FIG. 1, a conventional temperature control system for a semiconductor and LCD manufacturing process facility using a liquid phase medium includes an evaporator 10 for heat exchange, an accumulator 20 for separating gas and liquid, a compressor 30 And a condenser 40 for condensing the refrigerant to circulate the refrigerant, and a circulation line composed of the heater 50, the pump 60, and the storage tank 70. In detail, The following is an explanation.

First, a coolant, which is a liquid coolant discharged from a cooling device, which is a semiconductor process chamber in the circulation line, is pumped by a pump 60 after the temperature of the coolant is raised by the heater 50, ≪ / RTI >

A coolant having heat exchanged in the evaporator (10) is supplied to the device to be cooled.

Here, the refrigerant line circulates freon gas through the evaporator 10, the regenerator 20, the compressor 30, and the condenser 40, and exchanges heat with the coolant through the evaporator 10 .

Accordingly, the temperature of the coolant can be controlled by the heat exchange, and the temperature of the coolant supplied to the device to be cooled can be controlled.

At this time, coolant is continuously supplied to the storage tank 70 so that the coolant is stored in the storage tank 70 for a predetermined height, and the coolant stored in the storage tank 70 is stored in the circulation line Supply.

Since the conventional temperature control system for a semiconductor and LCD manufacturing process facility using a liquid medium as described above has a separate heating means for raising the temperature of a separate coolant, a separate power source for operating the same is required .

Therefore, there is a problem in that a considerable energy cost is incurred because power is consumed.

Another pumping means for forcibly circulating the coolant has to be provided and a separate storage tank for continuously supplying the liquid coolant is provided, so that the entire temperature control system takes up a large space and occupies a large space .

FIG. 2 is a temperature control system for solving the problem described with reference to FIG. 1, in which a coolant consisting of a gas is used instead of a conventional liquid coolant, a pump and a storage tank are removed, While saving about 40% or more of electricity.

In addition, a predetermined expansion control valve 80 is provided in place of the evaporator for heat exchange, and a coolant of a high-temperature and normal-temperature gas passed through the condenser 40 passes through the expansion control valve 80 and is thermally expanded, It becomes possible to control. In addition, if a higher temperature is needed, a heater can be applied.

However, since the above-described temperature control system requires a refrigerant line in which freon gas composed of the additional heat exchanger 20, the compressor 30, and the condenser 40 is circulated, the volume of the entire temperature control system It can not be reduced still, and when a high temperature is required, there is a problem in that there is little electric saving effect because additional heating means must be provided.

(0001) Korean Utility Model Publication No. 20-2008-0004784 (published on October 22, 2008) (0002) Korean Registered Patent No. 10-1109728 (issued on January 18, 2012) (0003) Korean Registered Patent No. 10-1109730 (issued on February 24, 2012) (0004) Korean Patent Registration No. 10-0927391 (published on Nov. 19, 2009)

SUMMARY OF THE INVENTION The present invention has been made in order to solve the above-mentioned problems, and it is an object of the present invention to provide a method of controlling a temperature of a liquid crystal by simultaneously controlling a temperature by a single temperature control device using gas in a plurality of semiconductor and LCD manufacturing process equipments A temperature control method and a temperature control system of a semiconductor and LCD manufacturing process facility using gas as a medium that can reduce power consumption and maintenance cost compared with the conventional technology.

It is a further object of the present invention to provide a temperature control method and a temperature control method of a semiconductor and LCD manufacturing process facility using a gas as a medium which can control a temperature in a relatively wide range from a low temperature to a high temperature by using a plurality of electronic expansion valves And to provide a control system.

It is a further object of the present invention to provide a temperature control method and a temperature control system for a semiconductor and LCD manufacturing process facility using a gas as a medium that can simplify the structure and miniaturize the system and improve the accuracy of temperature control There is.

According to an aspect of the present invention, there is provided a method of operating a compressor, comprising: inputting a predetermined working fluid discharged from a plurality of process facilities to a compressor through a first transfer line; The working fluid pressurized at a high pressure is discharged and flows into a condenser through a second transfer line; and a step of discharging the working fluid condensed into the condenser and discharging the liquid fluid through a third transfer line The step of introducing the working fluid temporarily stored in the receiver into the first electronic expansion valve through a fourth transfer line; and a step of introducing the working fluid temporarily inflated into the first electronic expansion valve, And a second transfer line to the plurality of process facilities through a fifth transfer line, and a second circulation step of transferring the high-temperature high-pressure operation Wherein the working fluid introduced into the second electronic expansion valve is transferred through a seventh transfer line and introduced into the fifth transfer line through a sixth transfer line, And a second circulation step having a second circulation step.

And the opening degrees of the first electronic expansion valve and the second electronic expansion valve are adjusted based on the temperatures sensed by the respective main temperature sensors (T1, T2) installed in the plurality of process equipments.

A compressor for increasing the pressure of the working fluid introduced from the plurality of process equipments through a first transfer line, a compressor for increasing the pressure of the working fluid flowing through the first transfer line, A condenser for condensing the working fluid; a main body having a liquid receiver for temporarily storing the working fluid introduced from the condenser through a third conveyance line; A first electronic expansion valve for controlling the amount of the working fluid introduced from the first transfer line and supplying the working fluid to the plurality of process facilities via a fifth transfer line, To control the amount of the working fluid flowing from the compressor through the sixth conveyance line so as to control the operation of the fifth conveyance line through the seventh conveyance line And a temperature control unit having a second electronic expansion valve for supplying the fluid.

Wherein the control unit is located closer to the plurality of process equipment than the main unit.

And the opening degrees of the first electronic expansion valve and the second electronic expansion valve are adjusted based on the temperatures sensed by the respective main temperature sensors (T1, T2) installed in the plurality of process equipments.

The present invention has the effect of reducing the power consumption and the maintenance cost compared with the conventional temperature control method through the liquid phase by simultaneously controlling the temperature by using one temperature control device using gas in a plurality of semiconductor and LCD manufacturing process equipments .

Further, by using a plurality of electronic expansion valves, the present invention has an effect of easily controlling the temperature to a relatively wide range from a low temperature to a high temperature.

Further, the present invention has the effect of simplifying the structure, making the system smaller, and improving the accuracy of temperature control.

BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate preferred embodiments of the invention and, together with the description, serve to further the understanding of the technical idea of the invention, And shall not be construed as interpretation.
FIG. 1 and FIG. 2 are conceptual views schematically showing a temperature control system of a semiconductor and LCD manufacturing process facility using a conventional liquid medium,
FIG. 3 is a flowchart showing a temperature control method of a semiconductor and LCD manufacturing process facility using a gas as a medium according to an embodiment of the present invention,
4 is an exemplary view showing a temperature control system of a semiconductor and LCD manufacturing process facility using gas as a medium according to an embodiment of the present invention.

Hereinafter, preferred embodiments of a temperature control method and a temperature control system of a semiconductor and LCD manufacturing process facility using gas as a medium according to the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a flowchart illustrating a temperature control method of an apparatus for manufacturing semiconductor and LCD using gas as a medium according to an embodiment of the present invention. FIG. 4 is a cross- Fig. 2 is an exemplary view showing a temperature control system of the facility.

3 and 4, a temperature control method and a temperature control system of a semiconductor and LCD manufacturing process facility using a gas as a medium according to a preferred embodiment of the present invention includes a plurality of process facilities 100 and 100 ' (200) and a temperature controller (300), which will be described in detail as follows.

First, the plurality of process equipments 100 and 100 'refers to process equipments used in a manufacturing process of an LCD, a semiconductor, etc., such as an electrostatic chuck, a heater and a chamber.

The plurality of process equipments (100, 100 ') controls the temperature of the plurality of process equipments (100, 100') by circulating a predetermined working fluid, wherein the working fluid is composed of gas R404a is preferably a refrigerant gas or a liquid brine.

The main body 200 includes a compressor 210 for compressing the working fluid to high temperature and high pressure, a condenser 220 for condensing the working fluid, and a receiver 230 for temporarily storing the working fluid.

The temperature control unit 300 includes a first electronic expansion valve 310 and a second electronic expansion valve 320.

It is preferable that the temperature control unit 300 is positioned closer to the plurality of the process equipments 100 and 100 'than the main body 200. That is, the first electronic expansion valve 310 and the second When the electronic expansion valve 320 is positioned near the plurality of process equipments 100 and 100 ', the accuracy of the temperature control of the working fluid flowing into the plurality of process equipments 100 and 100' The height has an advantage.

That is, by separating the main body 200, which occupies a large space, and the temperature controller 300, which is relatively small in volume and occupies less space, the space can be efficiently utilized and the temperature can be controlled more precisely .

The first electronic expansion valve 310 and the second electronic expansion valve 320 are connected to each other at a temperature sensed by respective main temperature sensors T1 and T2 provided in the plurality of process equipments 100 and 100 ' Respectively.

That is, in the case of the first electronic expansion valve 310, the temperatures of the plurality of process equipments 100 and 100 'are controlled by a low-temperature working fluid (gas refrigerant) of less than about 30 ° C, The valve 320 controls the temperature of the plurality of process equipments 100 and 100 'with a working fluid (brine) at normal temperature of about 30 ° C or more.

Here, the receiver 230 condenses the high-temperature, high-pressure working fluid supplied from the compressor 210 to the PCW (Process Cooling Water) in the condenser 220, Pressure vessel for storing a predetermined amount of time before being sent to the compressor 310. The operation of the plurality of process equipments 100 and 100 ' It is possible to stabilize the overall refrigeration cycle system by reducing the variation range of the condensation pressure caused by disturbance.

Hereinafter, a temperature control method of a semiconductor and LCD manufacturing process facility using gas as a medium according to an embodiment of the present invention will be described with reference to FIG.

As described above, the temperature control method of the semiconductor and LCD manufacturing process equipment using gas as a medium according to the preferred embodiment of the present invention includes a first circulation path for controlling the temperature at a low temperature and a second circulation path for controlling the temperature at a relatively high temperature And a second circulation path.

A predetermined working fluid discharged from the plurality of process equipments 100 and 100 'flows into the compressor 210 through the first transfer line 110 Step S100).

Subsequently, the working fluid flowing into the compressor 210 and pressurized at a high temperature and a high pressure is discharged and introduced into the condenser 220 through the second transfer line 240 (step S200).

Subsequently, the working fluid that flows into the condenser 220 and is condensed is discharged and flows into the receiver 230 through the third transfer line 250 (step S300), and temporarily stored.

Subsequently, the working fluid flowing into the receiver (230) and temporarily stored is introduced into the first electronic expansion valve (310) through the fourth transfer line (260) (step S400).

Then, the working fluid that has flown into the first electronic expansion valve 310 and is thermally expanded is introduced into the plurality of process facilities 100 and 100 'through the fifth transfer line 330 (step S500) .

The working fluid pressurized at the high temperature and high pressure fed through the second conveyance line 240 is branched to the second electronic expansion valve (not shown) through the sixth conveyance line 270 320 (step S600).

Then, the working fluid flowing into the second electronic expansion valve 320 is transferred through the seventh transfer line 340 and introduced into the fifth transfer line 330 (step S700).

The plurality of process equipments 100 and 100 'refers to process equipments used in manufacturing process of LCD, semiconductor, etc., such as an electrostatic chuck, a heater and a chamber.

The plurality of process equipments 100 and 100 'controls the temperature of the process equipments 100 and 100' while a predetermined working fluid is circulated, wherein the working fluid is a R404a refrigerant It is preferably a gas or liquid brine.

That is, in the case of the first circulation path, the gaseous refrigerant is circulated to the working fluid for the low temperature control, and in the case of the second circulation path, the working fluid, which is a liquid brine, do.

The first electronic expansion valve 310 and the second electronic expansion valve 320 are connected to each other at a temperature sensed by respective main temperature sensors T1 and T2 provided in the plurality of process equipments 100 and 100 ' Respectively.

That is, in the case of the first electronic expansion valve 310, the temperature of the plurality of process equipments 100 and 100 'is controlled by a low-temperature working fluid of less than about 30 ° C, Is to control the temperature of the plurality of process equipments (100, 100 ') with a working fluid at room temperature of about 30 ° C or more.

At this time, the receiver 230 condenses the high-temperature and high-pressure working fluid supplied from the compressor 210 to the PCW (Process Cooling Water) in the condenser 220, Pressure vessel for storing a predetermined amount of time before being sent to the compressor 310. The operation of the plurality of process equipments 100 and 100 ' It is possible to stabilize the overall refrigeration cycle system by reducing the variation range of the condensation pressure caused by disturbance.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, And such variations and modifications are intended to fall within the scope of the appended claims.

100, 100 ': Process equipment 110: First transfer line
200: main body 210: compressor
220: condenser 230: receiver
240: second conveying line 250: third conveying line
260: fourth conveyance line 270: sixth conveyance line
300: temperature control unit 310: first electronic expansion valve
320: second electronic expansion valve 330: fifth transfer line
340: seventh transfer line

Claims (5)

  1. A predetermined working fluid discharged from a plurality of process equipments 100 and 100 'flows into a compressor 210 through a first transfer line 110; The working fluid that has been introduced and pressurized at a high temperature and a high pressure is discharged and flows into a condenser 220 through a second transfer line 240; And then flows into the liquid receiver 230 through the third conveyance line 250. The operation fluid temporarily stored in the receiver 230 is discharged through the fourth conveyance line 260 1; and the working fluid that flows into the first electronic expansion valve (310) and is thermally expanded is introduced through the fifth transfer line (330) into the plurality of processing facilities (100, 100 &Quot;)< / RTI >respectively; And
    The operation fluid pressurized at the high temperature and high pressure fed through the second transfer line 240 branches and flows into the second electronic expansion valve 320 through the sixth transfer line 270; And a second circulation step of transferring the working fluid introduced into the expansion valve (320) through the seventh transfer line (340) and flowing into the fifth transfer line (330)
    The first electronic expansion valve 310 and the second electronic expansion valve 320 are controlled based on the temperatures sensed by the respective main temperature sensors T1 and T2 provided in the plurality of process equipments 100 and 100 ' And the opening degree of the gas is adjusted.
  2. delete
  3. A plurality of process equipment (100, 100 ') in which a predetermined working fluid is circulated;
    A compressor 210 for increasing the pressure of the working fluid flowing from the plurality of processing facilities 100 and 100 'through a first conveyance line 110 and a compressor 210 through a second conveyance line 240, A condenser 220 for condensing the working fluid introduced from the condenser 210 and a liquid receiver 220 for temporarily storing the working fluid introduced from the condenser 220 through a third transfer line 250, (230); And
    The amount of the working fluid flowing from the receiver 230 through the fourth conveyance line 260 is controlled so that the plurality of processing facilities 100 and 100 ' And a second conveying line connected to the first conveying line and the second conveying line, the first conveying line and the second conveying line being connected to the first conveying line and the second conveying line, And a second electronic expansion valve (320) for controlling the amount of working fluid to supply the working fluid to the fifth transfer line (330) through a seventh transfer line (340) ,
    The control unit 300 is positioned closer to the plurality of process equipments 100 and 100 'than the main unit 200,
    The first electronic expansion valve 310 and the second electronic expansion valve 320 are controlled based on the temperatures sensed by the respective main temperature sensors T1 and T2 provided in the plurality of process equipments 100 and 100 ' And the opening degree of the gas is adjusted.
  4. delete
  5. delete
KR1020130010189A 2013-01-30 2013-01-30 Controlling method and system for temperature of gas chiller for semiconductor and LCD manufacturing process KR101426886B1 (en)

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KR1020130010189A KR101426886B1 (en) 2013-01-30 2013-01-30 Controlling method and system for temperature of gas chiller for semiconductor and LCD manufacturing process

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080093564A (en) * 2007-04-17 2008-10-22 주식회사 앰이티 Control system of chiller for semiconductor and liquid crystal display
KR100927391B1 (en) * 2007-10-17 2009-11-19 유니셈(주) A chiller device and a control method for a semiconductor process equipment
KR20110125441A (en) * 2010-05-13 2011-11-21 유니셈(주) Chiller apparatus for semiconductor process and method for controlling temperature in the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080093564A (en) * 2007-04-17 2008-10-22 주식회사 앰이티 Control system of chiller for semiconductor and liquid crystal display
KR100927391B1 (en) * 2007-10-17 2009-11-19 유니셈(주) A chiller device and a control method for a semiconductor process equipment
KR20110125441A (en) * 2010-05-13 2011-11-21 유니셈(주) Chiller apparatus for semiconductor process and method for controlling temperature in the same

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