KR101406627B1 - Photoelectronic device using phase shift mask - Google Patents

Abstract

A photoelectric device using a phase shift mask according to the present invention relates to a photoelectric device which has a photoelectric layer which changes optical energy into electric energy. A phase shift mask is formed on the photoelectric device. The phase shift mask modulates the phase of transmitted light and outputs the same.

Description

[0001] PHOTOELECTRIC DEVICE USING PHASE MOVEMENT MASK [0002]

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a photoelectric device using a phase shift mask, and more particularly to a photoelectric device capable of improving a photoelectric conversion efficiency and a photoelectric conversion rate by a phase shift mask.

Photoelectronic devices are devices that absorb light to excite electrons and generate holes, and generate electrical signals in response to light such as visible light, infrared light, and ultraviolet light. That is, the photoelectric device absorbs the light energy and the electrons are excited to generate a photoelectron and a photohole. At this time, the photoelectron and the photohole move in opposite directions, Energy. Examples of such photoelectric devices include photo sensors such as photodiodes and phototransistors, and solar cells.

Specifically, the photoelectric element includes a photoelectric layer that converts light energy into electric energy. Such a photoelectric layer can be composed of various materials. For example, in the case of solar cells, silicon solar cells, CdTe (Cadmium Telluride), CIGS / CIS solar cells (CIGS: Copper-Indium-Gallium-Selenide, - indium-gallium-selenium compounds, CIS: Copper-Indium-Selenide), and dye-sensitized solar cells. That is, the CIGS / CIS solar cell uses copper, indium, gallium, selenium compound / copper, indium and selenium compound as the photoelectric layer, the CdTe solar cell uses the cadmium telluride as the photoelectric layer, A dye (DYE) and an electrolyte bonded to the particle surface of the scale are used as the photoelectric layer. Silicon solar cells are used as a photoelectric layer, and are based on silicon, which is free from human hazards, and are attracting attention as next-generation solar cells.

Such a photoelectric device is affected by the photoelectric conversion efficiency (which means the ratio of light incident from the outside to the charge) and the photoelectric conversion speed depending on the thickness of the photoelectric layer, and the photoelectric conversion efficiency and the speed are in a negative correlation .

For example, in the case of an optical sensor, light can be absorbed in an electric field applied region or absorbed in a diffusion distance region of electrons and holes, so that light can be detected with high photoelectric conversion efficiency. Particularly, when an optical sensor having a high-speed optical detection function is required, it should be designed such that the incident light is absorbed in an area where an electric field is applied. However, in the case of a high-speed optical sensor, the region where the light is absorbed is very narrow and the photoelectric conversion efficiency is low. Accordingly, when an optical sensor having high photoelectric conversion efficiency is required, the thickness of the absorption layer is increased to improve the photoelectric conversion efficiency. However, in this case, the photoelectric conversion rate is lowered due to the thick thickness of the absorption layer. Conversely, when an optical sensor having a fast photoelectric conversion speed is required, the thickness of the absorption layer is made thin to improve the photoelectric conversion speed. However, in this case, the photoelectric conversion efficiency is lowered due to the thin thickness of the absorption layer.

Therefore, it is required to develop a new photoelectric device capable of simultaneously increasing photoelectric conversion efficiency and photoelectric conversion speed.

It is an object of the present invention to provide an optoelectronic device capable of simultaneously improving photoelectric conversion efficiency and photoelectric conversion speed.

In order to accomplish the above object, an optoelectronic device using a phase shift mask according to an embodiment of the present invention is an optoelectronic device having a photoelectric layer for converting light energy into electric energy, which is provided on the photoelectric device, And a phase shift mask for modulating and outputting the phase of the light.

Specifically, the phase shift mask is provided with a first and second phase shift regions for diffracting the output, but the output by modulating the phase of light that is transmitted light, the phase of light that is the first output from the phase shift region (θ ₁ ) And the phase (? ₂ ) of the light output from the second phase shifting region are different from each other.

In particular, it is preferable that the first and second phase shifting regions are formed in a shape of a circular section, a polygonal section, a triangular section and a sinusoidal section.

The phase of the light output from the phase shift mask is preferably controlled by the thickness of the first and second phase shift regions and the refractive index of the light in the first and second phase shift regions.

On the other hand, the phase difference [theta] ₁₂ between the phase [theta] _{1 of} the light output from the first phase shift area and the phase [theta] _{2 of} the light output from the second phase shift area is obtained by the following equation.

(Where d _area1 is the thickness of the first phase shifting region, n _area1 is the refractive index of the light in the first phase shifting region, d _area2 is the thickness of the second phase shifting region, and n _area2 is the thickness of the first phase shifting region in the second phase shifting region Refractive index of light, m is a natural number, and? Is a wavelength of light)

Specifically, the phase shift mask may include a first transparent layer having a plurality of openings and made of a first transparent material.

The phase shift mask may further include a second transparent layer made of a second transparent material and disposed at an opening of the first transparent layer.

The phase shift mask may include a third transparent layer having a plurality of first embossed portions and a third transparent material.

In addition, the phase shift mask may include a fourth transparent layer having a plurality of second intaglio parts on the upper part and made of a fourth transparent material.

The phase shift mask may include (1) a fifth transparent layer having a plurality of second embossed portions and a fifth transparent material, (2) a sixth transparent material, and a second embossed portion of the fifth transparent layer, And a sixth transparent layer provided on the second transparent layer.

The phase shift mask may include (1) a seventh transparent layer having a plurality of second intaglio parts on the upper part and made of a seventh transparent material, (2) an eighth transparent material, and a second intaglio part of the seventh transparent layer, And an eighth transparent layer provided on the first transparent layer.

Meanwhile, the phase shift mask may include (1) a ninth transparent layer, (2) a first electrode structure connected to a plurality of electrodes and provided on the ninth transparent layer, (3) a liquid crystal layer provided on the first electrode structure, (4) a second electrode structure having a plurality of electrodes connected to the liquid crystal layer, and (5) a tenth transparent layer provided on the second electrode structure.

In particular, it is preferable that the first electrode structure and the second electrode structure are disposed such that the electrodes are symmetrical with respect to each other.

The first electrode structure and the second electrode structure may include a first electrode body having a bus bar electrode and a plurality of finger electrodes extending in one direction from the bus bar electrode, The finger electrode of the first electrode body and the finger electrode of the second electrode body may be alternately arranged.

Meanwhile, the first electrode structure and the second electrode structure may be formed in a pulsed interdigital electrode structure.

At this time, the thickness d _LC of the liquid crystal layer is obtained by the following equation.

N _LC1 is the ordinary refractive index of the liquid crystal layer, and n _LC2 is the extra-ordinary refractive index of the liquid crystal layer.

In the photoelectric device using the phase shift mask according to the present invention, the phase shift mask is disposed in the photoelectric layer for converting electrical energy into optical energy, so that not only the photoelectric conversion efficiency but also the photoelectric conversion rate can be improved at the same time .

1 is a side view showing a structure of a photoelectric device using a phase shift mask according to an embodiment of the present invention.
2 (a) and (b) are plan views showing the configuration of a phase shift mask according to an embodiment of the present invention.
3 (a)), the intensity of light absorbed according to the depth of the photoelectric layer (FIG. 3 (b)), the intensity of light absorbed according to the depth of the photoelectric layer ), The potential energy (Fig. 3 (c)) distributed according to the depth of the photoelectric layer, the incident intensity of light I ₀₁ , the reflection intensity I _{R1 of} light, the transmission intensity I _{T1 of} light, the light-current conversion intensity (I _C1) conversion (Fig. 3 (d)), the voltage (V) (3 (e) also) graph between the transformed current from light (I ₁₎ applied to the solar cell, respectively Fig.
4 (a) to 4 (e) show the structure of a solar cell having a photoelectric layer and a phase shift mask, a propagation path (FIG. 4 (a)) of light incident thereon, 4 (b)), the potential energy distribution along the depth of the photoelectric layer (Fig. 4 (c)), light-incident intensity (I ₀₂₎ · light reflection intensity (I _R2) · transmission of light intensity (I _T2) · photoelectric layer the light-current conversion intensity is absorbed converted to a current in (I _C2) (Fig. 4 (d)), the graph between the voltage applied to the solar battery (V) and the transformed current from light (I ₂₎ (Fig. 4 (e ) (Where I ₀₁ = I ₀₂ )
5 (a) and 5 (b) are a perspective view and a side sectional view showing the structure of a phase shift mask according to the first embodiment of the present invention.
6 (a) and 6 (b) are a perspective view and a cross-sectional side view showing the structure of a phase shift mask according to a second embodiment of the present invention;
7 (a) and 7 (b) are a perspective view and a side cross-sectional view showing the structure of a phase shift mask according to a third embodiment of the present invention;
8 (a) and 8 (b) are a perspective view and a side sectional view showing the structure of a phase shift mask according to a fourth embodiment of the present invention.
9 (a) and 9 (b) are a perspective view and a side sectional view showing the structure of a phase shift mask according to a fifth embodiment of the present invention;
10 (a) and 10 (b) are a perspective view and a side sectional view showing the structure of a phase shift mask according to a sixth embodiment of the present invention.
11 is a side view showing a structure of a phase shift mask according to a seventh embodiment of the present invention.
12 and 13 are perspective views illustrating structures of first and second electrode structures of a phase shift mask according to a seventh embodiment of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings, . In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail.

Furthermore, terms used herein are for the purpose of illustrating embodiments and are not intended to limit the present invention. In this specification, the singular forms include plural forms as the case may be, unless the context clearly indicates otherwise. &Quot; comprises "and / or" comprising "used in the specification do not exclude the presence or addition of one or more other elements other than the stated element. Unless defined otherwise, all terms used herein may be used in a sense commonly understood by one of ordinary skill in the art to which this invention belongs. In addition, commonly used predefined terms are not ideally or excessively interpreted unless explicitly defined otherwise.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Photoelectronic devices are devices that absorb light to excite electrons and generate holes, and generate electrical signals in response to light such as visible light, infrared light, and ultraviolet light. That is, the photoelectric device absorbs the light energy and the electrons are excited to generate a photoelectron and a photohole. At this time, the photoelectron and the photohole move in opposite directions, Energy. Examples of such photoelectric devices include photo sensors such as photodiodes and phototransistors, and solar cells.

Specifically, the photoelectric element includes a photoelectric layer that converts light energy into electric energy. Such a photoelectric layer can be composed of various materials. For example, the photoelectric layer may be formed of a copper-indium-gallium-selenium compound / copper-indium-selenium compound, cadmium telluride, a dye (DYE) and an electrolyte, or a silicon semiconductor.

1 shows a configuration of a photoelectric device using a phase shift mask according to the present invention.

As shown in FIG. 1, a photoelectric device using a phase shift mask according to the present invention is a photoelectric device including a photoelectric layer 100, and includes a phase shift mask 200 provided on the photoelectric device .

The phase shift mask 200 is a filter that transmits light to the photoelectric layer 100, and modulates and outputs the phase of transmitted light.

2 (a) and 2 (b) are plan views of the phase shift mask 200 as viewed from above (hereinafter, a portion where light is input to the phase shift mask 200 is referred to as " Quot; bottom ", and the surface viewed from the top is referred to as "flat surface").

2 (a) and 2 (b), the phase shift mask 200 includes a first phase shift area 201 for diffracting output light while first modulating and outputting the phase of transmitted light And a second phase shifting region 202, respectively. At this time, a first phase (? ₁ ) of light modulated and outputted through the first phase shifting region (201) and a second phase (? ₂ ) of light modulated through the second phase shifting region (202) Different ones are preferable.

The amount of light absorbed in the photoelectric layer 100 is exponentially proportional to the traveling path of light traveling in the photoelectric layer. Therefore, in order to achieve a high photoelectric conversion efficiency, the path of light traveling in the photoelectric layer 100 must be increased. Further, photoelectrons and photoholes generated by the absorbed light are converted into currents more rapidly when they are generated at the interface of the photoelectric layer 100. Therefore, light must be absorbed at the interface of the photoelectric layer 100 for a fast photoelectric conversion speed. That is, by causing the light to proceed in parallel with the interface of the photoelectric layer 100 instead of causing the light to proceed perpendicularly to the interface of the photoelectric layer 100, photoelectric conversion efficiency and photoelectric conversion rate can be increased at the same time.

On the other hand, in the case of a solar cell, in order to improve photoelectric conversion efficiency, an absorber layer, a photoelectron, and a photohole must exist around the electrode. In particular, the potential difference (contact potential or builtin voltage) formed in a solar cell is generated by the contact of two materials having different work functions, and the electric field generated by the difference of the work functions of the two materials is very narrow Lt; / RTI > That is, in order to realize a solar cell having high efficiency, all light must be absorbed in a region where an electric field is present, and within a diffusion distance of electrons and holes.

To this end, the photoelectric device using the phase shift mask according to the present invention includes the phase shift mask 200. That is, the light incident on the photoelectric device is diffracted while passing through the phase shift mask 200, instead of going straight to the interface of the photoelectric layer 100. Accordingly, the light is refracted at a large angle and moves parallel to the interface of the photoelectric layer 100 to increase the amount of light absorbed in the photoelectric layer 100, and the photoelectron and photohole Lt; RTI ID = 0.0 > 100 < / RTI > The phase shift mask 200 also distributes light within the photoelectric layer 200 to increase the density of photoelectrons and holes in the photoelectric layer 200 and thereby increase the drift motion by the electric field, Diffusion movement due to density difference is caused. Therefore, the photoelectric device using the phase shift mask according to the present invention has high photoelectric conversion efficiency and high photoelectric conversion speed simultaneously by the phase shift mask 200.

Specifically, the first and second phase shifting regions 202 of the phase shift mask 200 serve to modulate and diffract the phase while transmitting light. Accordingly, diffraction and condensing characteristics of light transmitted according to the size, shape, and number of the first and second phase shifting regions 201 and 202 are controlled. In particular, the first and second phase shifting regions 202 serve to reduce the light reflected by the photoelectric layer 100 having a high refractive index. Accordingly, the photoelectric device according to the present invention has a higher photoelectric conversion efficiency .

The phase shift mask 200 is preferably formed of a transparent material. Specifically, the second phase shifting region 202 is formed by forming a concave portion, a relief, and an opening in a transparent material layer, and the first phase shifting region 201 is formed in the transparent material layer, Except for the portion where the phase shifting region 202 is formed. As a result, light is diffracted while outputting modulated light in different phases in the engraved portion, the embossed portion and the opening portion formed in the transparent material layer and the remaining transparent material layer in which they are not formed.

The phase shift mask 200 may include a plurality of first and second phase shift regions 202. As shown in FIG. 2A, the second phase shifting region 202 may have a rectangular cross section or a circular or polygonal cross section. In order to further increase the intensity of the first-order diffracted light, the second phase shifting region 202 may be formed in a sinusoidal shape in its flat section as shown in Fig. 2 (b) It may be formed in a triangular wave pulse shape. The first phase shifting region 201 may be formed in a circular, polygonal, sinusoidal, or triangular shape in the same manner as the second phase shifting region 202.

The phase of the light output from the phase shift mask 200 is determined by the thickness of the first and second phase shift regions 201 and 202 and the refractive index of the light in the first and second phase shift regions 201 and 202 Lt; / RTI > The phase shift mask 200 according to the present invention modulates and outputs the first phase? ₁ modulated through the first phase shift area 201 and the second phase shift area 202 It is preferable that the phase difference? ₁₂ of the second phase? _{2 of} light is formed so as to satisfy the following formula (1).

‥‥ 식 (1)

(1)

The above equation (1) can be summarized as the following equation (1-1).

‥‥ 식 (1-1)

(1-1)

Where d _area1 is the _thickness of the first phase shifting region 201, n _area1 is the refractive index of the light in the first phase shifting region 201, d _area2 is the _thickness of the second phase shifting region 202, , n _area2 is the refractive index of the light in the second phase shifting region 202, m is a natural number, and? is the wavelength of the light.

That is, the first and second phase-shifted regions 201 and 202 of the phase-shift mask 200 are arranged such that the first phase (? ₁ ) and the second phase (? ₂ ) Should be formed so that there is a difference of 2? For example, when the first and second phase shifting regions 201 and 202 are formed such that a phase difference of 360 ° is generated between the first phase? ₁ and the second phase? ₂ , In the formula (1), m is 1 and the first and second phase shifting regions 201 and 202 are arranged such that a phase difference of 720 is generated between the first phase (? ₁ ) and the second phase (? ₂ ) M is 2 in the formula (1). The refractive indexes (n _area1 , n _area2 ) of the light in the first and second phase shifting areas 201 and 202 are determined by the materials of the first and second phase shifting areas 201 and 202.

3 (a) shows a structure of a solar cell having only a photoelectric layer 100 and a traveling path of light incident thereon. FIG. 3 (b) shows the intensity of light absorbed according to the depth of the photoelectric layer 100 FIG. 3 (c) shows a potential profile distributed along the depth of the photoelectric layer 100. FIG. FIG. 3 (d) is a graph showing the relationship between the incident intensity of light I ₀₁ , the reflection intensity of light I _R1 , the transmission intensity of light I _T1 , (I _C1 ) of the light that is absorbed by the light emitting diode (LED) 100 and converted into the current. 3 (e) shows a graph between the voltage V applied to the solar cell and the current I ₁ converted from light.

4 (a) shows a structure of a solar cell having a phase shift mask 200 on a photoelectric layer 100 and a traveling path of light incident thereon. FIG. 4 (b) FIG. 4 (c) shows a potential profile distributed along the depth of the photoelectric layer 100. FIG. 4 (c) shows the light absorption profile according to the depth of the photoelectric layer 100. FIG. FIG. 4D is a graph showing the relationship between the incident intensity of light (I ₀₂ ), the reflection intensity of light (I _R2 ), the transmission intensity of light (I _T2 ) (I _C2 ) of the light that is absorbed by the light emitting diode (LED) 100 and converted into the current. 4 (e) shows a graph between the voltage (V) applied to the solar cell and the current I ₂ converted from light (I _O1 = I _O2 )

3 and 4, a solar cell having only a photoelectric layer 100 and a solar cell having a photoelectric layer 100 and a phase shift mask 200 are provided with light beams I _O1 = I _O2) even if the incident, a larger transmission of light intensity for a solar cell provided with a phase shift mask _{(200) (I T2> I} T1), the smaller the light reflection intensity (I _R2 <I _R1), the larger the light current (I _C2 > I _C2 ).

를 만족한다. 단, n_phasemask는 위상 변이 마스크(200)의 굴절률, n_air는 공기의 굴절률, n_electrode는 상부 전극의 굴절률을 각각 나타낸다.
Generally, a solar cell includes an upper electrode provided on the photoelectric layer 100 and a lower electrode provided below the photoelectric layer 100, and the upper and lower electrodes are made of a transparent material. At this time, when the solar cell further includes the phase shift mask 200, the reflectance of the solar cell is decreased while the refractive index is matched, and conversely, the transmittance of the solar cell is increased. Such a phenomenon can be optimized by adjusting the refractive index and the thickness of the phase shift mask 200. At this time, the refractive index of the phase shift mask 200 is

. Where n _phasemask represents the refractive index of the phase shift mask 200, n _air represents the refractive index of air, and n _electrode represents the refractive index of the upper electrode.

Hereinafter, a specific embodiment of the phase shift mask 200 will be described.

5 (a) and 5 (b) are diagrams showing the structure of the phase shift mask 200 according to the first embodiment of the present invention. Particularly, FIG. 5 (b) Fig.

5, the phase shift mask 200 according to the first embodiment includes a first transparent layer 210 having a plurality of openings 211 and made of a first transparent material, . Accordingly, the light incident on the photoelectric device passes through the first transparent layer 210. At this time, the light passing through the region outside the opening 211 is diffracted while being phase-modulated due to the first transparent material. The first phase (? ₁ ) of the light modulated and outputted in the region outside the opening (211) is different from the second phase (? ₂ ) of the light modulated and output in the opening (211). That is, the opening 211 in the first transparent layer 210 corresponds to the second phase shifting region 202, and the region other than the opening 211 corresponds to the first phase shifting region 201.

Regions other than the opening 211 and the opening 211 may be formed in a circular or polygonal shape with a flat cross-section, and may be formed in a rectangular shape. The openings 211 may be formed in a triangular waveform and a sinusoidal pulse shape in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the first-order diffracted light is further increased, and the intensity of the direct beam that is not diffracted is reduced to zero, so that the intensity of the entire diffracted light is further improved.

Specifically, the thickness d ₁ of the first transparent layer 210 can be obtained by using the following equation (2).

‥‥ 식 (2)

(2)

In the formula (2), d ₁ represents the thickness of the first transparent layer 210, m represents a natural number,? Represents a wavelength of light, n ₁ represents a refractive index of light in the first transparent material, and n _air represents a refractive index of light in air .

6 (a) and 6 (b) are views showing a structure of a phase shift mask 200 according to a second embodiment of the present invention. Particularly, FIG. 6 (b) Fig.

6, the phase shift mask 200 according to the second embodiment of the present invention is configured such that the second transparent material is filled in the opening 211 in the first embodiment The region where the second transparent material is filled is referred to as "second transparent layer 220"). Accordingly, the light incident on the photoelectric device passes through the first transparent layer 210 and the second transparent layer 220. At this time, the light passing through the first transparent layer 210 is diffracted while being output by modulating the phase due to the first transparent material, and light passing through the second transparent layer 220 is diffracted by the second transparent material The phase is modulated and outputted and diffracted. The first phase? ₁ modulated by the first transparent layer 210 and the second phase? ₂ modulated by the second transparent layer 220 are different from each other. That is, the first transparent layer 210 corresponds to the first phase shifting region 201 and the second transparent layer 220 corresponds to the second phase shifting region 202.

In particular, the first transparent material and the second transparent material are preferably different materials. The thickness of the first transparent layer 210 and the thickness of the second transparent layer 220 may be the same or different.

The first transparent layer 210 and the second transparent layer 220 may have a circular or polygonal cross-section, and may have a rectangular shape. In addition, the first transparent layer 210 and the second transparent layer 220 may be formed in a shape of a pulse having a triangular waveform and a sinusoidal waveform in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the 1st-order diffracted light is further increased, and the intensity of the direct beam which is not diffracted is reduced to 0, so that the intensity of the total diffracted light is further improved.

Specifically, the first transparent layer 210, the thickness (d ₁₎ and the second transparent layer 220, the thickness (d ₂₎ of the difference between _{(| △ d 12 | = |} d 1 -d 2 |) are the following Can be obtained using equation (3).

‥‥ 식 (3)

(3)

In the formula (3), m represents a natural number,? Represents a wavelength of light, n ₁ represents a refractive index of light in the first transparent material, and n ₂ represents a refractive index of light in the second transparent material.

7 (a) and 7 (b) are views showing the structure of the phase shift mask 200 according to the third embodiment of the present invention. Particularly, FIG. 7 (b) Fig.

7, the phase shift mask 200 according to the third embodiment of the present invention includes a plurality of first embossed portions 231 protruding in an embossed shape at an upper portion thereof, And a third transparent layer 230 made of a material. Accordingly, the light incident on the photoelectric element passes through the third transparent layer 230. At this time, light passing through the first embossed portion 231 and light passing through the region outside the first embossed portion 231 is diffracted while outputting the modulated light due to the third transparent material. The first phase? _{1 of} the light modulated and outputted in the region outside the first embossing portion 231 is different from the second phase? _{2 of} the light modulated and outputted by the first embossing portion 231 . That is, in the third transparent layer 230, the first embossing portion 231 corresponds to the second phase shifting region 202, and the region other than the first embossing portion 231 corresponds to the first phase shifting region 201).

The area other than the first embossed portion 231 and the first embossed portion 231 may have a circular or polygonal shape in a flat cross section and may be formed in a rectangular shape. In addition, a region other than the first embossed portion 231 and the first embossed portion 231 may be formed in a shape of a pulse having a triangular waveform and a sinusoidal waveform in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the 1st-order diffracted light is further increased, and the intensity of the direct beam which is not diffracted is reduced to 0, so that the intensity of the total diffracted light is further improved.

Specifically, the thickness d ₃ of the first embossed portion 231 of the third transparent layer 230 can be obtained by using the following equation (4).

‥‥ 식 (4)

(4)

N ₃ is the refractive index of light in the third transparent material, and n _air is the refractive index of light in the air, respectively, and d ₃ is the thickness of the first embossed portion 231, m is a natural number, .

8 (a) and 8 (b) are views showing a structure of a phase shift mask 200 according to a fourth embodiment of the present invention. Particularly, FIG. 8 (b) Fig.

8, the phase shift mask 200 according to the fourth embodiment of the present invention includes a fourth transparent layer 240 having a plurality of first intaglio parts 241 and made of a fourth transparent material, As shown in FIG. That is, the first intaglio part 241 is a region formed with a depressed shape in place of the first embossed part 231. Accordingly, the light incident on the photoelectric element passes through the fourth transparent layer 240. At this time, the light passing through the first intaglio part 241 and the light passing through the area outside the first intaglio part 241 are diffracted while being phase-modulated due to the fourth transparent material. The first phase? _{1 of} the light modulated and outputted in the region other than the first intaglio portion 241 is different from the second phase? _{2 of} the light modulated and outputted by the first intaglio portion 241 . That is, in the fourth transparent layer 240, the first intaglio part 241 corresponds to the second phase shift area, and the area other than the first intaglio part 241 corresponds to the first phase shift area.

The area outside the first intaglio 241 and the first intaglio 241 may have a circular or polygonal planar section and may be formed in a rectangular shape. The area other than the first intaglio part 241 and the first intaglio part 241 may be formed in a shape of a pulse having a triangular waveform and a sinusoidal waveform in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the 1st-order diffracted light is further increased, and the intensity of the direct beam which is not diffracted is reduced to 0, so that the intensity of the total diffracted light is further improved.

Specifically, the thickness d ₄ of the first concave portion 241 of the fourth transparent layer 240 can be obtained by using the following equation (5).

‥‥ 식 (5)

(5)

N ₄ is the refractive index of light in the fourth transparent material, and n _air is the refractive index of light in the air, respectively, and d ₄ is the thickness of the first recessed portion 240, m is a natural number, .

9 (a) and 9 (b) are diagrams showing the structure of a phase shift mask 200 according to a fifth embodiment of the present invention. Particularly, FIG. 9 (b) Fig.

9, the phase shift mask 200 according to the fifth embodiment of the present invention includes a plurality of second embossed portions 251 protruding in an embossed shape on an upper portion thereof, And a sixth transparent layer 260 made of a sixth transparent material and provided on the second embossed portion 251 of the fifth transparent layer 250. Accordingly, the light incident on the photoelectric device sequentially passes through the fifth transparent layer 250 and the sixth transparent layer 260, or passes through the region outside the second embossed portion 251 in the fifth transparent layer 250. At this time, the light that sequentially passes through the second embossed portion 251 and the sixth transparent layer 260 of the fifth transparent layer 250 is diffracted while being phase-modulated due to the fifth and sixth transparent materials, The light passing through the region outside the second embossing portion 251 is diffracted while being phase-modulated due to the fifth transparent material. The first phase? ₁ of the modulated and outputted light in the region other than the second embossing portion 251 and the second phase? _{1 of} the light modulated and outputted in the second embossing portion 251 and the sixth transparent layer 260 ? ₂ ) are different from each other. That is, the second embossed portion 251 and the sixth transparent layer 260 correspond to the second phase shift region 202, and the region of the fifth transparent layer 250 other than the second embossed portion 251 And corresponds to the first phase shifting region 201.

In particular, the fifth transparent material and the sixth transparent material are preferably different materials. The thickness of the second embossed portion 251 and the thickness of the sixth transparent layer 260 may be the same or different.

The area other than the second embossing portion 251 and the embossing portion 251 may be formed in a circular or polygonal shape in a flat cross section and may be formed in a rectangular shape. In addition, a region other than the second embossing portion 251 and the embossing portion 251 may be formed in a shape of a pulse having a triangular wave and a sinusoidal wave in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the 1st-order diffracted light is further increased, and the intensity of the direct beam which is not diffracted is reduced to 0, so that the intensity of the total diffracted light is further improved.

Specifically, the second difference between the second embossing unit 251, the thickness (d ₅₎ and the sixth transparent layer 260, the thickness (d ₆₎ of the _{(| △ d 56 | = |} d 5 -d 6 |) is below Can be obtained by using equation (6).

‥‥ 식 (6)

(6)

In the formula (6), m is a natural number,? Is a wavelength of light, n ₅ is refractive index of light in the fifth transparent material, and n ₆ is refractive index of light in the sixth transparent material.

10 (a) and 10 (b) are views showing a structure of a phase shift mask 200 according to a sixth embodiment of the present invention. Particularly, FIG. 10 (b) Fig.

10, the phase shift mask 200 according to the sixth embodiment of the present invention includes a plurality of second intaglio parts 271 having grooves formed in a recessed shape at an upper part thereof, And an eighth transparent layer 280 made of an eighth transparent material and provided on the second intaglio part 271 of the seventh transparent layer 270. Accordingly, the light incident on the photoelectric device sequentially passes through the seventh transparent layer 270 and the eighth transparent layer 280 or passes through the area outside the second intaglio 271 in the seventh transparent layer 270. At this time, the light that sequentially passes through the second intaglio 271 and the eighth transparent layer 280 of the seventh transparent layer 270 is diffracted while being phase-modulated by the seventh and eighth transparent materials, The light passing through the area outside the second engraved portion 271 is diffracted while being phase-modulated by the seventh transparent material. The first phase? _{1 of} the light modulated and outputted in the region other than the second intrinsic portion 271 and the second phase? _{1 of} the light modulated and outputted in the second intrinsic portion 271 and the eighth transparent layer 280 ? ₂ ) are different from each other. That is, the second intaglio part 271 and the eighth transparent layer 280 correspond to the second phase shift area 202, and the area of the seventh transparent layer 270 other than the second intaglio part 271 is And corresponds to the first phase shifting region 201.

In particular, the seventh transparent material and the eighth transparent material are preferably different materials. The thickness of the second intaglio 271 and the thickness of the eighth transparent layer 280 may be the same or different.

The area other than the second intaglio part 271 and the second intaglio part 271 may be formed in a circular or polygonal shape with a flat cross section and may be formed in a rectangular shape. The area other than the second intaglio part 271 and the second intaglio part 271 may be formed in a shape of a pulse having a triangular waveform and a sinusoidal waveform in a plane section thereof. Particularly, when formed in a sinusoidal shape, the intensity of the 1st-order diffracted light is further increased, and the intensity of the direct beam which is not diffracted is reduced to 0, so that the intensity of the total diffracted light is further improved.

Specifically, the second difference between the concave portion 271, the thickness (d ₇₎ and the eighth transparent layer 280, the thickness (d ₈₎ of a _{(| △ d 78 | = |} d 7 -d 8 |) is below Can be obtained by using equation (7).

‥‥ 식 (7)

(7)

In the formula (7), m represents a natural number,? Represents a wavelength of light, n ₇ represents a refractive index of light in the seventh transparent material, and n ₈ represents a refractive index of light in the eighth transparent material.

11, the phase shift mask 200 according to the seventh embodiment of the present invention includes a ninth transparent layer 10, a plurality of electrodes connected to the ninth transparent layer 10, A liquid crystal layer 30 provided on the first electrode structure 20 and a second electrode structure 40 provided on the liquid crystal layer 30 with a plurality of electrodes connected to the first electrode structure 20, And a tenth transparent layer 50 provided on the second electrode structure 40. In particular, the first electrode structure 20 and the second electrode structure 40 are preferably arranged such that the liquid crystal layer 30 is symmetrical with respect to each other.

12, the first electrode structure 20 and the second electrode structure 40 are electrically connected to the bus bar electrodes 21a, 22a, 41a, and 42a, The first electrode bodies 21 and 41 and the second electrode bodies 22 and 42 having a plurality of finger electrodes 21b, 22b, 41b and 42b extending in one direction from the electrodes 21a, 22a, 41a and 42a, The finger electrodes 21b and 41b of the first electrode bodies 21 and 41 and the finger electrodes 22b and 42b of the second electrode bodies 22 and 42 are alternately arranged .

In addition, the first electrode structure 20 and the second electrode structure 40 may be formed in a pulse-like interdigital electrode structure as shown in FIG. The shape of the pulse may be variously formed, such as a triangular wave, a square wave, or a sinusoidal wave.

The first electrode structure 20 and the second electrode structure 40 are preferably formed of a transparent conductive material. That is, the first electrode structure 20 and the second electrode structure 40 may be formed of a metal such as Au, Ni, Ti, or Cr, an indium tin oxide (ITO), an indium zinc oxide (IZO) , A transparent conductive oxide (TCO) such as indium zinc tin oxide (IZTO), a conductive polymer, or graphene. Specifically, the first electrode structure 20 and the second electrode structure 40 may be formed by a chemical vapor deposition (CVD) method, a plasma enhanced CVD (PECVD) method, a low pressure CVD (LPCVD) but not limited thereto, by a deposition method such as physical vapor deposition (PVD), sputtering, atomic layer deposition (ALD), or the like.

11, the phase shift mask 200 according to the seventh embodiment of the present invention has a function of changing a voltage applied to the first electrode structure 20 and the second electrode structure 40 The properties of the liquid crystal layer 30 are changed and the phase of the light passing through the liquid crystal layer 30 is modulated and diffracted. That is, the phase of the light modulated according to the shape of the first electrode structure 20 and the second electrode structure 40 and the magnitude of the voltage applied thereto is changed.

Further, the thickness d _LC of the liquid crystal layer 260 can be obtained by using the following equation (8).

‥‥ 식 (8)

(8)

In Equation (8), m is a natural number _,? Is a wavelength of light, n _LC1 is an ordinary refractive index of a liquid crystal layer, and n _LC2 is an extra-ordinary refractive index of a liquid crystal layer.

According to the first to seventh embodiments, the first transparent layer 210 to the tenth transparent layer 50 may be formed of a transparent material. For example, the materials of the first transparent layer 210 to the tenth transparent layer 50 may be selected from the group consisting of polymer, glass, quartz, and sapphire.

In particular, when the material of the first transparent layer 210 to the tenth transparent layer 50 is a polymer, the material is not particularly limited, but a material such as polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), polyethylene naphthalate (PEN), polyether sulfone (PES), cyclic olefin polymer (COC), TAC (triacetylcellulose) film, polyvinyl alcohol (PVA) film, polyimide At least one member selected from the group consisting of polystyrene (PS), biaxially oriented PS (BO resin containing K resin), polypropylene (PP), and triacetyl cellulose (TAC).

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be appreciated that one embodiment is possible. Accordingly, the true scope of the present invention should be determined by the technical idea of the claims.

10: ninth transparent layer 20: first electrode structure
21, 41: first electrode body 21a, 22a, 41a, 42a: bus bar electrode
21b, 22b, 41b, 42b: finger electrodes 22, 42: second electrode body
40: second electrode structure 50: tenth transparent layer
100: revolution layer 200: phase shift mask
210: first transparent layer 211: opening
220: second transparent layer 230: third transparent layer
231: first embossed portion 240: fourth transparent layer
241: first engraving part 250: fifth transparent layer
251: second embossed portion 260: sixth transparent layer
270: seventh transparent layer 271: second intaglio part
280: Eighth transparent layer

Claims (16)

1. A photoelectric device having a photoelectric layer for converting light energy into electrical energy,
And a phase shift mask which is provided on the photoelectric device and modulates and outputs the phase of the transmitted light. The method according to claim 1,
Wherein the phase shift mask comprises:
A first and a second phase shifting region for modulating and outputting the phase of transmitted light and diffracting the output light,
Wherein a phase (? ₁ ) of light output from the first phase shifting region and a phase (? ₂ ) of light output from the second phase shifting region are different from each other. 3. The method of claim 2,
Wherein the first and second phase-
Wherein the flat section has a shape of a circle, a polygon, a triangular wave, and a sinusoidal shape. The method according to claim 2 or 3,
The phase of the light output from the phase-
Wherein the phase shift mask is adjusted by the thickness of the first and second phase shift regions and the refractive index of light in the first and second phase shift regions. The method according to claim 2 or 3,
The phase difference (? ₁₂ ) between the phase (? ₁ ) of the light output from the first phase shifting region and the phase (? ₂ ) of the light output from the second phase shifting region is obtained by using the following equation A photoelectric device using a phase shift mask.

(Where d _area1 is the thickness of the first phase shifting region, n _area1 is the refractive index of the light in the first phase shifting region, d _area2 is the thickness of the second phase shifting region, and n _area2 is the thickness of the first phase shifting region in the second phase shifting region Refractive index of light, m is a natural number, and? Is a wavelength of light) The method according to claim 1,
Wherein the phase shift mask comprises:
And a first transparent layer having a plurality of openings and made of a first transparent material. The method according to claim 6,
Wherein the phase shift mask comprises:
And a second transparent layer made of a second transparent material and disposed in an opening of the first transparent layer. The method according to claim 1,
Wherein the phase shift mask comprises:
And a third transparent layer made of a third transparent material, the first transparent layer having a plurality of first embossed portions on the upper surface thereof. The method according to claim 1,
Wherein the phase shift mask comprises:
And a fourth transparent layer made of a fourth transparent material and having a plurality of second intaglio parts on the upper part thereof. The method according to claim 1,
Wherein the phase shift mask comprises:
A fifth transparent layer having a plurality of second embossments on the top and made of a fifth transparent material;
And a sixth transparent layer made of a sixth transparent material and provided on the second embossed portion of the fifth transparent layer. The method according to claim 1,
Wherein the phase shift mask comprises:
A seventh transparent layer having a plurality of second intaglio parts on the top and made of a seventh transparent material;
And an eighth transparent layer made of an eighth transparent material and provided on the second intaglio part of the seventh transparent layer. The method according to claim 1,
Wherein the phase shift mask comprises:
A ninth transparent layer;
A first electrode structure having a plurality of electrodes connected to the ninth transparent layer;
A liquid crystal layer provided on the first electrode structure;
A second electrode structure having a plurality of electrodes connected to the liquid crystal layer;
And a tenth transparent layer provided on the second electrode structure. 13. The method of claim 12,
The first electrode structure and the second electrode structure may include a first electrode structure,
And each of the electrodes is disposed so as to be symmetrical with respect to the photoelectric conversion element. 14. The method of claim 13,
The first electrode structure and the second electrode structure may include a first electrode structure,
A first electrode body and a second electrode body including a bus bar electrode and a plurality of finger electrodes extending in one direction from the bus bar electrode,
Wherein the finger electrode of the first electrode body and the finger electrode of the second electrode body are arranged alternately with each other. 14. The method of claim 13,
The first electrode structure and the second electrode structure may be formed,
Wherein the first electrode is formed in a pulse-like interdigital electrode structure. 13. The method of claim 12,
Wherein the thickness d _LC of the liquid crystal layer is obtained by using the following equation.

N _LC1 is the ordinary refractive index of the liquid crystal layer, and n _LC2 is the extra-ordinary refractive index of the liquid crystal layer.

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