KR101395779B1 - Fabrication Method of Photo Active Layer for Solar Cell - Google Patents

Abstract

More particularly, the present invention relates to a process for preparing a photoactive layer of a solar cell, comprising the steps of: a) mixing a first chalcogen compound of Group 11 metal and a Group 11 metal having a melting point lower than that of the first chalcogen compound Coating a substrate with an ink containing a second chalcogen compound in a single particle and a third chalcogen compound of an element selected from one or more elements selected from Group 12 to Group 14 to form a coating film; And b) subjecting the coating film to heat treatment to produce a polyvalent chalcogen compound film of copper and one or more elements selected from group 12 to group 14.

Description

[0001] The present invention relates to a photovoltaic layer,

The present invention relates to a method of manufacturing a photoactive layer of a solar cell, and more particularly, to a method of manufacturing a photoactive layer of a compound semiconductor based solar cell.

The manufacturing process of the compound semiconductor photoactive layer (CIG (S, Se), CZT (S, Se)) based on the existing vapor deposition method has a limitation in that a high processing cost is required despite its excellent characteristics. Thus, in order to commercialize a solar cell using a compound semiconductor, it is considered to be essential technology to manufacture CIG (S, Se) and CZT (S, Se) photoactive layers using a solution process.

 US 6,127,202 and US 6268014, a mixture of metal oxide nanoparticles or a mixture of metal oxide and non-oxide particles is coated on a substrate and reacted in a reducing atmosphere and a Se gas atmosphere to form a CI (G ) S films have been attempted by a particle - based solution process.

However, when a photoactive layer is prepared using a metal oxide-based solution process, an incidental reduction process must be performed, and there is a problem that defects are generated in the reduction process, which causes non-uniformity of reaction in the Se gas heat treatment process .

Therefore, it is necessary to research and develop a new economical approach that can produce dense, single phase CIG (S, Se) and CZT (S, Se) films through heat treatment process at about 550 ℃.

U.S. Patent 6,127,202 U.S. Patent No. 6268014

An object of the present invention is to provide an ink capable of producing a dense, single-phase semiconductor compound-based photoactive layer through a low-temperature heat treatment at a process allowable temperature of 550 ° C or lower.

Another object of the present invention is to provide a method of manufacturing a dense, single phase semiconductor compound-based photoactive layer and a photoactive layer through a low-temperature heat treatment at a process allowable temperature of 550 캜 or less.

The ink according to the present invention is characterized in that the first chalcogen compound of Group 11 metal and the second chalcogen compound of Group 11 metal having a melting point lower than that of the first chalcogen compound are mixed in a single particle, The third chalcogen compound of one or more selected elements in the family.

The ink according to an embodiment of the present invention may be an ink for a photoactive layer of a solar cell.

The method for producing a solar cell photoactive layer according to the present invention comprises the steps of: a) preparing a first chalcogen compound of Group 11 metal (hereinafter referred to as a first chalcogen compound having a high melting point) and a Group 11 metal compound having a melting point lower than that of the first chalcogen compound (Hereinafter referred to as " low-melting-point second chalcogen compound ") are mixed in a single particle and an ink containing a third chalcogen compound having one or more elements selected from group 12 to group 14 Forming a coating film by coating; And b) subjecting the coating film to heat treatment to produce a polyvalent chalcogen compound film of one or more elements selected from group 11 metals and groups 12 to 14.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the melting point (占 폚) of the low melting point second chalcogen compound may be 220 to 550 占 폚.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the ink may contain 10 to 900 parts by weight of the high melting point first chalcogen compound per 100 parts by weight of the low melting point second chalcogen compound.

In the method of manufacturing a solar cell photoactive layer according to an embodiment of the present invention, the group 11 includes copper, the group 12 includes zinc (Zn), the group 13 may be selected from one or more of indium and gallium , Group 14 includes tin (Sn), and chalcogen element may be selected from one or more of sulfur and selenium.

In the method of manufacturing a solar cell photoactive layer according to an embodiment of the present invention, the high melting point first chalcogen compound may include Cu ₂ Se, and the low melting point second chalcogen compound may include CuSe, CuSe ₂ , And mixtures thereof.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the third chalcogen compound may include chalcogen (S and / or Se) compound particles of one or more selected elements from In and Ga. For example, a third knife kojen compounds _{(In x Ga 1-x)} 4 (S y Se 1-y) 3, (In x Ga 1-x) (S y Se 1-y), (In x Ga 1 _{-x) 6 (S y Se 1} -y) 7, (In x Ga 1-x) 9 (S y Se 1-y) 11, (In x Ga 1-x) 2 (S y Se 1-y) ₃ and (In _x Ga _{1 -x} ) ₅ (S _y Se _1-y ) ₇ . Here, in the third chalcogen compound, x may be a real number of 0? X? 1 and y may be a real number of 0? Y? 1, respectively.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the third chalcogen compound may include chalcogen (S and / or Se) compound particles of at least one selected from Sn and Zn. For example, a third knife kojen compounds are _{Sn (S y Se 1-y} ), Sn 2 (S y Se 1-y) 3 and Sn at least one, or both in the _{(S y Se 1-y)} 2 These particles and Zn (S _y Se _1-y ) particles. In this case, in the third chalcogen compound, y is a real number of 0? Y? 1.

In the method for producing a solar cell photoactive layer according to an embodiment of the present invention, it is preferable that the element selected from at least one element selected from Group 12 to Group 14 contained in the third chalcogen compound: the first chalcogen compound and the second chalcogen compound The molar ratio of the Group 11 metal may be 1: 0.7 to 1.2.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the heat treatment may be performed at 400 to 550 ° C.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the heat treatment may be performed in a chalcogen atmosphere.

In the method for producing a solar cell photoactive layer according to an embodiment of the present invention, the composite particle comprising the first chalcogen compound and the second chalcogen compound is prepared by mixing a first solution containing a Group 11 metal precursor and a second solution containing trioctylphosphine , Trioctylphosphine oxide, an acid or a mixture thereof, and a chalcogen precursor, and then adding the first solution to a second solution at a temperature of 160 to 240 ° C. .

The present invention includes a solar cell photoactive layer produced by the above-described method for manufacturing a solar cell photoactive layer.

The present invention includes a solar cell provided with a photoactive layer of a solar cell manufactured by the above-described method for manufacturing a photoactive layer of a solar cell.

The method for producing a photoactive layer according to the present invention is characterized in that a high melting point first chalcogen compound of a Group 11 metal and a low melting second chalcogen compound of a Group 11 metal are mixed in a single particle and a composite particle of Group 12 to Group 14 A high quality multi-chalcogen compound (photoactive layer) can be manufactured through an extremely simple, safe and easy process of applying an ink containing a third chalcogen compound of a selected element or two or more selected elements and performing a low temperature heat treatment on the coated film, It is possible to produce a photoactive layer composed of a single-phase polychalcogen compound at a temperature within a process allowable temperature of 550 ° C or less, to produce a photoactive layer having excellent microstructure and excellent stability and uniformity, There are advantages to be able to.

1 is a graph showing the results of X-ray diffraction analysis of the copper chalcogen particles prepared in Production Example 1,
2 is a scanning electron microscope (SEM) photograph of the copper chalcogen particles prepared in Preparation Example 1,
3 is a scanning electron microscope (SEM) image of indium chalcogen particles prepared in Production Example 2,
4 is a scanning electron microscope (SEM) image of the photoactive layer prepared in Production Example 2,
5 is a diagram showing the results of X-ray diffraction of the photoactive layer produced in Production Example 2,
6 is a diagram showing the X-ray diffraction results of the copper chalcogen compound particles prepared in Comparative Example 4,
7 is a scanning electron microscope (SEM) image of the copper chalcogen compound particles prepared in Comparative Example 4,
8 is a scanning electron microscope (SEM) image of the photoactive layer prepared in Comparative Example 4,
9 is a scanning electron microscope (SEM) image of the surface of the photoactive layer prepared in Comparative Example 5,
10 is a scanning electron micrograph showing a surface of the photoactive layer prepared in Comparative Example 6. FIG.

Hereinafter, a method of manufacturing the ink and photoactive layer of the present invention will be described in detail with reference to the accompanying drawings. The following drawings are provided by way of example so that those skilled in the art can fully understand the spirit of the present invention. Therefore, the present invention is not limited to the following drawings, but may be embodied in other forms, and the following drawings may be exaggerated in order to clarify the spirit of the present invention. Hereinafter, the technical and scientific terms used herein will be understood by those skilled in the art without departing from the scope of the present invention. Descriptions of known functions and configurations that may be unnecessarily blurred are omitted.

As a result of deepening research on the photoactive layer of a compound semiconductor-based solar cell, the Applicant has found that, surprisingly, a high melting point first chalcogen compound of Group 11 metal which maintains a solid state at a heat treatment temperature and a low- When the melting point second chalcogen compound is used as a raw material in composite particles in which a single particle is mixed, it is possible to produce a high-quality photoactive layer through a low-temperature heat treatment at a process allowable temperature of 550 ° C or less, Can be manufactured, a dense and uniform photoactive layer can be produced, and a photoactive layer composed of coarse crystal grains can be produced, leading to the filing of the present invention.

The ink according to the present invention is a first chalcogen compound of Group 11 metal (hereinafter referred to as a first chalcogen compound having a high melting point) and a second chalcogen compound having a melting point lower than that of the first chalcogen compound having a high melting point , A low melting point second chalcogen compound) are mixed in a single particle; And a third chalcogen compound of one or more elements selected from group 12 to group 14. At this time, the ink of the present invention may be an ink for a photoactive layer of a solar cell.

Specifically, the ink contains a chalcogen compound of a Group 11 metal and a third chalcogen compound which is a chalcogen compound of an element constituting the photoactive layer to be produced except for a Group 11 metal, A first chalcogen compound of Group 11 metal and a second chalcogen compound of Group 11 metal having different melting points.

In the ink according to one embodiment of the present invention, the high melting point first chalcogen compound maintains a solid phase at the heat treatment temperature for producing the solar cell photoactive layer, and the low melting point second chalcogen compound forms a molten phase can do.

In detail, the heat treatment temperature for preparing the solar cell photoactive layer may be 400 to 550 ° C, the high melting point first chalcogen compound may maintain the solid phase at 400 to 550 ° C, A molten phase can be formed at 550 ° C.

In the ink according to an embodiment of the present invention, a desired polychromatic chalcogen compound film of a single phase is produced by reaction of the third chalcogen compound contained in the ink with the composite particle by a low-temperature heat treatment at 550 ° C or less, In order to produce a dense and dense film, the melting point of the low melting second chalcogen compound may be 220 to 550 캜. The first chalcogen compound having a high melting point can be used as long as it is a chalcogen compound of a Group 11 metal that maintains a solid phase at a temperature higher than 550 캜. For example, the first chalcogen compound has a melting point of 600 to 1200 캜 Lt; / RTI >

In the ink according to an embodiment of the present invention, the high melting point first chalcogen compound and the low melting point second chalcogen compound may be mixed in a single particle, and in the synthesis step, And the melting point second chalcogen compound may be in the form of particles formed by homogeneously gathering together.

That is, in the ink according to an embodiment of the present invention, the high-melting point first chalcogen compound forming a solid phase and the low-melting point second chalcogen compound forming a liquid phase during heat treatment may be homogeneously And the like.

The ink according to an embodiment of the present invention contains a low melting point second chalcogen compound melted at a heat treatment temperature for manufacturing a photoactive layer and a high melting point first chalcogen compound maintaining a solid state at a heat treatment temperature. The first and second chalcogen compounds having a high melting point and a low melting point, respectively. As a result, the second chalcogen compound forming the molten phase and the first chalcogen compound retaining the solid phase can generate a very fast and homogeneous single-phase polychalcogen compound, and the loss of the chalcogen element is prevented, Sexual stability can be obtained. When the ink is prepared by mixing the high-melting chalcogen compound and the low-melting chalcogen compound independently in a specific solvent, the distribution of the molten phase in the heat treatment process Which results in non-uniform microstructure formation of the photoactive layer finally produced. Further, when an ink is prepared based on only a low-melting chalcogen compound without a high-melting chalcogen compound, volatilization of crystalline phases having low melting points due to the formation of an excessive molten phase during heat treatment after ink application occurs, It is difficult to control the composition of the layer.

In the ink according to an embodiment of the present invention, the composite particle in which the high melting point first chalcogen compound and the low melting point second chalcogen compound are homogeneously mixed may be nanoparticles and may have an average particle size of 5 to 500 nm have.

In an ink according to an embodiment of the present invention, the Group 11 metal may include copper, and the chalcogen compound of Group 11 may be a copper chalcogen compound. Also, the first chalcogen compound may be a first copper chalcogen compound, and the second chalcogen compound may be a second copper chalcogen compound having a lower melting point than the first copper chalcogen compound. The first copper chalcogen compound and the second copper chalcogen compound may each be in a crystalline phase, and the first copper chalcogen compound and the second copper chalcogen compound may have different crystal phases, and the first copper chalcogen compound and the 2 copper chalcone compound may have different melting points by different crystal phases.

In the ink according to an embodiment of the present invention, the first chalcogen compound may include Cu ₂ Se, and the second chalcogen compound may include CuSe, CuSe _2, or a mixture thereof.

In the ink according to an embodiment of the present invention, the ink may contain 10 to 900 parts by weight of the first chalcogen compound per 100 parts by weight of the second chalcogen compound. When the weight ratio of the second chalcogen compound to the first chalcogen compound is out of the above range, there is a risk that low-temperature reactivity and film quality deterioration due to the low melting point of the second chalcogen compound may occur and the risk of loss of chalcogen element . Specifically, the composite particles may contain 100 to 900 parts by weight of the first chalcogen compound, more specifically 200 to 600 parts by weight of the first chalcogen compound per 100 parts by weight of the second chalcogen compound, ≪ / RTI >

In the ink according to one embodiment of the present invention, the chalcogen compound (chalcogen compound of Group 11 metal) containing the first chalcogen compound and the second chalcogen compound contained in the ink contains a Group 11 metal precursor A second solution containing a first solution and a surfactant and a chalcogen precursor, which is trioctylphosphine, trioctylphosphine oxide, acid or a mixture thereof, is prepared and then added to a second solution at a temperature of 160 to 240 ° C 1 < / RTI > solution.

A chalcogen compound of a Group 11 metal can be produced in the form of composite particles in which the first chalcogen compound and the second chalcogen compound are homogeneously aggregated through the above-described method for producing a chalcogen compound, A chalcogen compound nanoparticle having a stable composition and having a dense film of a single phase polychalcogen compound is produced by reacting with a third chalcogen compound which is a chalcogen compound of at least one element selected from group 12 to group 14 by low temperature heat treatment .

In the above-described method for producing a chalcogen compound, the relative ratio of the first chalcogen compound to the second chalcogen compound in the chalcogen compound to be synthesized is preferably at least one selected from the group consisting of trioctylphosphine, trioctylphosphine oxide, The temperature of the second solution can be controlled by controlling the temperature of the second solution at a temperature of 160 to 240 DEG C so that the temperature of the second solution can be controlled at 160 to 240 DEG C (Second chalcogen compound): 100 to 100 (second chalcogen compound): 10 to 900 (first chalcogen compound), specifically 100 (second chalcogen compound) by controlling the temperature of the second chalcogen compound: Chalcogen compound particles (composite particles) having a weight ratio of 100 to 900 (first chalcogen compound), more specifically 100 (second chalcogen compound): 200 to 600 (first chalcogen compound) can be produced. The ratio of the surfactant is preferably 0.1 to 30 times the molar ratio of the Group 11 metal precursor.

In the preparation of the chalcogen compound described above, the Group 11 metal precursor may comprise a copper precursor, and the copper precursor may be one or more selected from chloride, nitrate, sulfate, acetate, phosphate, silicate and hydrochloride of copper .

In the above-mentioned method for producing a chalcogen compound, the acid used as the surfactant may be a saturated or an unsaturated acid, and may be selected from linear, branched or cyclic ones having 6 to 30 carbon atoms. As a practical example, there can be mentioned, for example, oleic acid, lysine oleic acid, stearic acid, hyadroxystearic acid, linoleic acid, amino decanoic acid, hydroxydecanoic acid, lauric acid, decenoic acid, undecenoic acid, Hydroxycarboxylic acid, succinic acid, succinic acid, succinic acid, succinic acid, succinic acid, succinic acid, succinic acid, succinic acid, succinic acid,

In the above-described method of producing a chalcogen compound, the solvent of the first solution may be an amine-based solvent, and the amine-based solvent may include a saturated or unsaturated acid. One or two or more rings may be selected. As a practical example, the amine-based solvent may include diethylamine, triethylamine, 1,3-propane diamine, 1,4-butane diamine, diamine, 1,5-pentane diamine, 1,6-hexane diamine, 1,7-heptane diamine, 1, Diethylene diamine, octane diamine, diethylene diamine, 8-octene diamine, diethylene triamine, toluene diamine, m-phenylenediamine, (diphenyl methane diamine), hexamethylene diamine, triethylene tetramine, tetraethylenepentamine, hexamethylene tetramine, ethanolamine, diethanolamine diethanolamine, triethanolamine, and oleylamine. It may include a solvent which is chosen.

In the above-described method for producing a chalcogen compound, the molar concentration of the Group 11 metal precursor contained in the first solution may be 0.01 to 10 M, and the first solution charged into the second solution may be heated to 100 to 200 캜 It may be in a warmed state.

The chalcogen precursor may comprise a sulfur (S) and / or selenium (Se) precursor and the chalcogen precursor may comprise a sulfur (S) and / or selenium (Se) .

In the above-described method of producing a chalcogen compound, the solvent of the second solution may be an amine-based solvent, independently of the solvent of the first solution, the amine-based solvent may include a saturated or unsaturated amine, And may be one selected from linear, branched or cyclic groups of 6 to 30 carbon atoms. As a practical example, the amine-based solvent may include diethylamine, triethylamine, 1,3-propane diamine, 1,4-butane diamine, diamine, 1,5-pentane diamine, 1,6-hexane diamine, 1,7-heptane diamine, 1, Diethylene diamine, octane diamine, diethylene diamine, 8-octene diamine, diethylene triamine, toluene diamine, m-phenylenediamine, (diphenyl methane diamine), hexamethylene diamine, triethylene tetramine, tetraethylenepentamine, hexamethylene tetramine, ethanolamine, diethanolamine diethanolamine, triethanolamine, and oleylamine. It may include a solvent which is chosen.

In the above-described method for producing a chalcogen compound, the molar concentration of the chalcogen precursor contained in the second solution may be 0.01 to 10M, and the molar ratio of the Group 11 metal precursor: chalcogen precursor is 1: 0.8 to 1.2, specifically 1: 0.9 to 1.1.

In the above-described method of producing a chalcogen compound, the surfactant, which is trioctylphosphine, trioctylphosphine oxide, acid, or a mixture thereof, is contained in the second solution together with the chalcogen precursor, The activator may be added in a molar ratio of 0.1 to 30 times the Group 11 metal precursor.

In the above-mentioned method of producing a chalcogen compound, a second solution containing a chalcogen precursor together with a surfactant, which is trioctylphosphine, trioctylphosphine oxide, an acid, or a mixture thereof, is heated to 160 to 240 캜, The first solution heated at 100 to 200 캜 in the state that the second solution is heated to 160 to 240 캜 is instantaneously injected into the second solution and the temperature of the second solution is maintained for 160 minutes to 2 hours Deg.] C to prepare a chalcogen compound.

In the ink according to an embodiment of the present invention, the third chalcogen compound, which is a chalcogen compound of one or more selected elements of group 12 to group 14, is a chalcogen compound and / Or chalcogen compounds of one or more selected elements in groups 12 and 14, respectively.

The group 12 may include zinc (Zn), the group 14 may include tin (Sn), and the group 13 may include one or more elements selected from indium (In) and gallium (Ga) .

In detail, the third chalcogen compound contained in the ink may be chalcogen compound particles containing all the elements constituting the photoactive layer to be produced, except for copper.

For example, when the photoactive layer to be produced is CI (S, Se) (Cu-In- (S, Se)), the third chalcogen compound may be chalcogen compound particles containing In. As a practical example, the chalcogen compound particles containing In may be In-Se compound particles, In-S compound particles, or In-Se-S compound particles.

For example, when the photoactive layer to be produced is CIG (S, Se) (Cu-In-Ga- (S, Se)), the third chalcogen compound may be a chalcogen compound particle containing In- . As a practical example, the chalcogen compound particles containing In-Ga may be In-Ga-Se compound particles, In-Ga-S compound particles or In-Ga-Se-S compound particles.

 For example, when the photoactive layer to be produced is CZT (S, Se) (Cu-Zn-Sn- (S, Se)), the third chalcogen compound may be chalcogen compound particles containing Zn and Sn . As a practical example, the chalcogenide compound particles containing Zn and Sn may contain at least one selected from Sn-Se compound particles, Sn-S compound particles and Sn-Se-S compound particles and Zn-S compound particles, Zn- Particles and Zn-Se-S compound particles.

Substantial For example, a third knife kojen compounds _{(In x Ga 1-x)} 4 (S y Se 1-y) 3, (In x Ga 1-x) (S y Se 1-y), (In x Ga _{1-x) 6 (S y} Se 1-y) 7, (In x Ga 1-x) 9 (S y Se 1-y) 11, (In x Ga 1-x) 2 (S y Se 1-y ) ₃ and (In _x Ga _{1 -x} ) ₅ (S _y Se _1-y ) ₇ . In this case, in the third chalcogen compound particles, x may be a real number of 0? X? 1 and y may be a real number of 0? Y? 1. Substantial For example, a third knife kojen compounds are _{Sn (S y Se 1-y} ), Sn 2 (S y Se 1-y) 3 and _{Sn (S y Se 1-y} ) over one or both on _second selected particles and Zn (S _y Se _1-y ) particles. In this case, in the third chalcogen compound particles, y is a real number satisfying 0? Y? 1.

As a more practical example, the third chalcogen compound may include one or more selected particles of In ₂ Se ₃ , Ga ₂ S ₃ , ZnS and SnS.

 In the ink according to an embodiment of the present invention, the third chalcogen compound particles may be nanoparticles in terms of low-temperature reactivity, and the average particle size of the third chalcogen compound nanoparticles may be 5 to 200 nm.

In the ink according to an embodiment of the present invention, the third chalcogen compound particles may be amorphous particles, thereby reacting with the copper nanoparticles at a low temperature within a process allowable temperature, A zeolite compound can be prepared.

In the method of manufacturing a solar cell photoactive layer according to an embodiment of the present invention, the photoactive layer to be manufactured may be CIGS (Cu-In-Ga-Se or Cu-In-Ga-S), CIGSS -Se-S), CZTS (Cu-Zn-Sn-Se or Cu-Zn-Sn-S) or CZTSS The molar ratio of the Group 11 metals contained in the first chalcogen compound and the second chalcogen compound may be 1: 0.7 to 1.2. That is, the molar ratio of the Group 11 metals contained in the chalcogen compounds (first and second chalcogen compounds) of Group 12 to Group 14 contained in the third chalcogen compound may be 1: 0.7 to 1.2.

The ink according to an embodiment of the present invention may further contain a solvent for dispersing the particulate phase.

The solvent contained in the ink contains a particulate phase and suffices as a solvent used in a common ink composition in which a coating process is performed. In one example, the solvent may contain a solvent selected from one or more of nonpolar solvent, polyol solvent, amine solvent, phosphine solvent, alcohol solvent and polar solvent.

As a practical example, the polyol solvent may be selected from the group consisting of diethylene glycol, diethylene glycol ethyl ether, diethylene glycol buthyl ether, triethylene glycol, polyethyleneglycol poly (ethylene glycol) diacrylate, poly (ethylene glycol) dibenzonate, dipropylene glycol, poly (ethylene glycol) Dipropylene glycol, and glycerol. The solvent may be selected from one or more selected from the group consisting of dipropylene glycol and glycerol.

As a practical example, amine-based solvents include diethylamine, triethylamine, 1,3-propane diamine, 1,4-butane diamine, diamine, 1,5-pentane diamine, 1,6-hexane diamine, 1,7-heptane diamine, 1, Diethylene diamine, octane diamine, diethylene diamine, 8-octene diamine, diethylene triamine, toluene diamine, m-phenylenediamine, (diphenyl methane diamine), hexamethylene diamine, triethylene tetramine, tetraethylenepentamine, hexamethylene tetramine, ethanolamine, diethanolamine diethanolamine) and triethanolamine (triethanolamine). Can.

As a practical example, the phosphine-based solvent may include a solvent selected from one or more of trioctylphosphine and trioctylphosphineoxide, acid.

As a practical example, the alcoholic solvent may be selected from one or more selected from methyl cellosolve, ethyl cellosolve, butyl cellosolve, and alcohols having 1 to 8 carbon atoms Solvent.

As a practical example, the apolar solvent may be selected from the group consisting of toluene, chloroform, chlorobenzene, dichlorobenzene, anisole, xylene, And may include one or more solvents selected from hydrocarbon-based solvents.

As a practical example, the polar solvent may be selected from the group consisting of formamide, diformamide, acetonitrile, tetrahydrofuran, dimethylsulfoxide, acetone, May include one or more solvents selected from the group consisting of terpineol,? -Terpineol, dihydro-terpineol and water.

The ink according to an embodiment of the present invention may further contain a dispersant and an organic binder.

The dispersant and the organic binder contain a particulate phase, and the dispersant and the organic binder used in the conventional ink composition in which the coating process is performed are satisfactory.

For example, the dispersant may be selected from the group consisting of fatty acid salts (soaps), alpha -sulfo fatty acid ester salts (MES), alkylbenzenesulfonic acid salts (ABS), linear (straight chain) alkylbenzenesulfonic acid salts (LAS) Low molecular weight anionic compounds including sulfuric acid ester salts (AES) and alkyl sulfuric acid triethanol; Low molecular weight non-ionic compounds including fatty acid ethanol amides, polyoxyethylene alkyl ethers (AE), polyoxyethylene alkyl phenyl ethers (APE), sorbitol and sorbitan; Low molecular weight cationic compounds including alkyltrimethylammonium salts, dialkyldimethylammonium chlorides and alkylpyridinium chlorides; Low molecular weight positively charged compounds including alkylcarboxybetaines, sulfobetaine, and lecithin; A polymeric water-based dispersant including a formalin condensate of a naphthalene sulfonate, a polystyrene sulfonate, a polyacrylate, a copolymer salt of a vinyl compound and a carboxylic acid monomer, carboxymethylcellulose, and polyvinyl alcohol; Polymeric non-aqueous dispersing agent comprising a polyacrylic acid partial alkyl ester and a polyalkylene polyamine; And a polymeric cationic dispersing agent comprising a polyethyleneimine and an aminoalkyl methacrylate copolymer.

As a non-limiting example, the dispersing agent may be a commercial product, and specific examples include EFKA4008, EFKA4009, EFKA4010, EFKA4015, EFKA4046, EFKA4047, EFKA4060, EFKA4080, EFKA7462, EFKA4020, EFKA4050, EFKA4055, EFKA4400, EFKA4401, EFKA4402, EFKA4403, DisperBYK101, DisperBYK102, DisperBYK106, DisperBYK108, DisperBYK111 (manufactured by EFKA ADDITIVES BV), TEXAPHOR-UV21 and TEXAPHOR-UV61 (produced by Cognis Japan K.K.), EFKA4300, EFKA4300, EFKA4340, EFKA6220, EFKA6225, EFKA6700, EFKA6780, EFKA6782, EFKA6782, , DisperBYK116, DisperBYK130, DisperBYK140, DisperBYK142, DisperBYK145, DisperBYK161, DisperBYK162, DisperBYK163, DisperBYK164, DisperBYK166, DisperBYK167, DisperBYK168, DisperBYK170, DisperBYK171, DisperBYK174, DisperBYK180, DisperBYK182, DisperBYK192, DisperBYK193, DisperBYK2000, DisperBYK2001, DisperBYK2020, DisperBYK2025, DisperBYK2050, DisperBYK2070 , DisperBYK2155, DisperBYK2164, BYK220S, BYK300, BYK306, BYK320, BYK322, BYK325, BYK330, BYK340, BYK350, BYK377, BYK378 , BYK380N, BYK410, BYK425, and BYK430 (manufactured by Big Chemical Japan K.K.), FTX-207S, FTX-212P, FTX-220P, FTX-220S, FTX-228P, FTX-710LL, FTX- ftergent) 212P, printer 220P, printer 222F, printer 228P, printer 245F, printer 245P, printer 250, printer 251, printer 710FM, printer 730FM, MEGAFACE F-477, Megapack 480SF, or Megapack F-482 (manufactured by DIC Corporation), manufactured by Nippon Kayaku Co., Ltd., ) Can be used.

For example, the organic binder may be selected from the group consisting of polyvinyl alcohol (PVA), polyvinyl butyral (PVB), polyvinyl pyrrolidone (PVP), polyvinylidene fluoride (PVDF), self- crosslinkable acrylic resin emulsion, hydroxyethyl cellulose HEC), carboxymethylcellulose (CMC), styrene butadiene rubber (SBR), copolymers of C1-10 alkyl (meth) acrylate and unsaturated carboxylic acid, nitrocellulose, gelatin, Polyvinyl butyral, thixoton, starch, polyether-polyol, polystyrene (PS-NH2) end-treated with amine groups, hydroxy cellulose, methyl cellulose, nitrocellulose, ethyl cellulose, ethyl A resin containing a carboxyl group, a phenolic resin, a mixture of ethylcellulose and a phenolic resin, an ester polymer, a methacrylic resin, In the methacrylate polymer, ethylenic copolymer having unsaturated groups, ethyl cellulose, an acrylate and an epoxy resin may comprise a material that is selected more than one or two.

The ink according to an embodiment of the present invention may contain 200 to 900 parts by weight of the solvent relative to 100 parts by weight of the particles comprising the first chalcogen compound and the second chalcogen compound.

In the case of further containing a dispersant and an organic binder in an ink according to an embodiment of the present invention, 0.5 to 10 parts by weight of a dispersing agent and 0.5 parts by weight of a dispersing agent are added per 100 parts by weight of the particles comprising the first chalcogen compound and the second chalcogen compound, To 10 parts by weight of an organic binder.

The content of the solvent based on the particulate phase including the first chalcogen compound and the second chalcogen compound, and optionally the dispersant and the organic binder according to one embodiment of the present invention can be controlled by adjusting the mechanical strength The adhesive strength with the substrate to which the ink is applied, and the content capable of preventing deterioration of the film quality due to the organic substances decomposed upon drying and heat treatment.

Hereinafter, a method for producing the solar cell photoactive layer using the ink described above will be described in detail.

The method of manufacturing a solar cell photoactive layer according to the present invention comprises the steps of: a) forming a first chalcogen compound of a Group 11 metal and a second chalcogen compound of Group 11 metal having a lower melting point than a high melting point first chalcogen compound in a single particle Applying the above-described ink containing the mixed multiparticulates and the third chalcogen compound of one or more selected from Group 12 to Group 14 elements to a substrate to form a coating film; And b) subjecting the coating film to a heat treatment to produce a polyvalent chalcogen compound film of one or more selected from Group 11 metals and Group 12 to Group 14 elements.

Since the conventional compound semiconductor (CIG (S, Se)) or CZT (S, Se) -based photoactive layer is a multi-component compound, the manufacturing process is very difficult. Electrodeposition is one of the physical thin film manufacturing methods such as evaporation, sputtering and selenization. Chemical thin film manufacturing methods include electrodeposition. In each method, various manufacturing processes Method is being used.

However, the production method of the present invention does not use gaseous organometallic compounds or expensive vacuum equipment which are expensive and difficult to handle, and a highly complicated process such as multilayer deposition is unnecessary. That is, the production method of the present invention is characterized in that composite particles of a Group 11 metal chalcogen compound (first chalcogen compound and second chalcogen compound) having different melting points and a third chalcogen compound constituting the photoactive layer to be produced A high quality multi-chalcogen compound (photoactive layer) can be produced through an extremely simple, safe, and easy process of applying an ink containing an organic solvent and applying a low temperature heat treatment to the coating film.

In addition, the production method of the present invention can produce a photoactive layer composed of a single-phase polychalcogen compound at a temperature lower than the allowable process temperature of 550 DEG C or below by producing the photoactive layer using the ink described above, And a photoactive layer having a dense microstructure can be produced.

In the method of manufacturing the photoactive layer of the solar cell according to an embodiment of the present invention, the substrate to which the ink is applied may be a non-conductive substrate commonly used in the field of solar cells, And may include a laminated substrate. Examples of the non-conductive substrate include a glass substrate, a soda-lime glass substrate, a ceramic substrate, and a semiconductor substrate. As an example of the back electrode formed on the non-conductive substrate, a molybdenum (Mo) layer can be mentioned.

In the method of manufacturing the photoactive layer of the solar cell according to an embodiment of the present invention, the application of the ink may be carried out by a method such as spin coating, bar coating, dip coating, drop casting, ink-jet printing, micro- printing, imprinting, gravure printing, gravure-offset printing, flexography printing and screen printing in one or more selected ways. .

In the method for manufacturing the solar cell photoactive layer according to an embodiment of the present invention, a step of drying the coating film may be further performed after the steps a) and b). The drying step is for volatilizing and removing the liquid phase contained in the coating film and can be used as long as it is a drying method usually used in the field of forming a film by application of ink. As a non-limiting example, drying of the coating film can be carried out at 60 to 90 ° C in air.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the heat treatment of the coating film formed by applying ink on the substrate may be performed at 400 to 550 ° C, preferably 500 to 530 ° C.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, densification of the film, crystal growth, and phase transition to a single polychalcogen compound are performed by heat treatment of the applied coating film. That is, by the reaction between the first and second chalcogen compounds containing the Group 11 metal and the chalcogen compound containing the elements constituting the photoactive layer to be produced except for the Group 11 metal by the heat treatment of the coating film, Phase transition occurs to the single phase of the chalcogen compound.

As described above, an extremely dense and homogeneous photoactive layer can be produced even at an extremely low heat treatment temperature of 550 DEG C or less, by forming a pure single phase chalcogen compound by phase transition.

In the manufacturing method according to the present invention, the heat treatment of the coating film can be performed in a chalcogen atmosphere. The chalcogen atmosphere includes an atmosphere in which sulfur (S), selenium (Se), or a mixed gas thereof exists.

In detail, the heat treatment of the coating film can be performed by supplying a chalcogen-containing gas or by heat-treating the chalcogen powder together with the coating film and using the chalcogen powder as a source of chalcogen gas.

More specifically, the coating film is heat-treated knife kojen atmosphere is sulfur (S), selenium (Se) or comprising an atmosphere that is a mixed gas exists, knives kojen gas atmosphere is a knife, such as H ₂ S or H ₂ Se kojen The gas containing the element S or Se may be supplied or the chalcogen element S or Se may be volatilized and then supplied or the chalcogen powder which is a powder of the chalcogen element may be heat-treated together with the coating film, May be used as a source of chalcogen gas.

As a practical example, when supplying chalcogen gas, a chalcogen-containing gas containing H ₂ S, H ₂ Se, chalcogen element (S, Se) vapor or a mixed gas thereof is supplied at a flow rate of 5 to 300 sccm .

As a practical example, in the case where the chalcogen powder itself containing the S powder, the Se powder, or the mixed powder thereof is vaporized to form a chalcogen atmosphere in the chamber in which the heat treatment of the coating film is performed, And may be different from each other.

Specifically, when chalcogen powder is used as a chalcogen gas source, the chalcogen powder can be heated to 80 to 250 캜.

When the chalcogen powder is used as a source of kelogen gas, the chalcogen powder in the heat treatment apparatus can be placed in a region different from the region where the coating film is located. At this time, the heat treatment can be performed using an apparatus equipped with a heating element and a controller so that two or more uniform zones can be independently formed in a single heat treatment space capable of flowing the fluid, The heating temperature of the chalcogen powder can be controlled by controlling the position of the chalcogen powder in the heat treatment apparatus.

The heat treatment of the coating film may be carried out at any pressure, but in a non-limiting example, the heat treatment may be performed at a vacuum or an atmospheric pressure.

In the method of manufacturing the solar cell photoactive layer according to an embodiment of the present invention, the multi _- chalcogen compound may be CuIn _x Ga _1-x Se _y S _1-y (0 _{? X} ? 1, And may include Cu ₂ Zn _m Sn _2-m (Se _n S _1-n ) ₄ (real number 0 ≦ _m ≦ 2, real number 0 ≦ _n ≦ ₁ ).

For example, when the first chalcogen compound of Cu ₂ Se and the second chalcogen compound of CuSe are mixed in a single particle and an ink containing In ₂ Se ₃ chalcogen compound particles is used, a single phase of CuInSe ₂ A polyvalent chalcogen compound can be produced.

For example, when the first chalcogen compound of Cu ₂ Se and the second chalcogen compound of CuSe are composed of composite particles mixed in a single particle, mixed particles of In ₂ Se ₃ chalcogen compound particles and Ga ₂ S ₃ chalcogen compound particles a third knife kojen a compound by using the ink containing the particles _{CuIn x Ga 1-x Se y} S 1-y (0≤x≤1 mistake, 0≤y≤1 a real number) on a single multi knife kojen Compounds can be prepared. At this time, the molar ratio of In and Ga (In and Ga of chalcogen compound particles): Cu (Cu of copper particles) contained in the ink may be 1: 0.7 to 1.2, and the molar ratio of In: The molar ratio of In: Ga of the zeolite compound (x: 1-x) can be used.

For example, a composite particle in which a first chalcogen compound of Cu ₂ Se and a second chalcogen compound of CuSe are mixed in a single particle, and a ZnS _y Se _{1 -y} chalcogen compound particle (y is 0? Y? real number), and SnS _y Se _1-y knife kojen compound particles (y is 0 ≤ y ≤1 mistakes) mixing particles of the third knife kojen compound particles using the ink Cu ₂ Sn _2-m Zn _m containing the ( Se _n S _1-n ) ₄ (real number of ₀ ? M? 2, real number of _{0? N? 1} ). At this time, the molar ratio of Zn and Sn (Zn and Sn of chalcogen compound particles): Cu (Cu of copper particles) contained in the ink may be 1: 0.7 to 1.2, and the molar ratio of Zn: The molar ratio of Zn: Sn of the zeolite compound (m: 2-m) can be used.

The present invention includes a photoactive layer produced by the above-described manufacturing method.

The present invention includes a solar cell provided with a photoactive layer manufactured by the above-described manufacturing method.

A solar cell according to an embodiment of the present invention includes the above-described photoactive layer formed on a substrate (substrate on which a lower electrode is formed); A buffer layer formed on the photoactive layer; A window layer formed on the buffer layer; And a grid electrode formed on the window layer.

When the pn junction between the photoactive layer of the first conductivity type semiconductor (for example, p-type in the case of CIGS) and the window layer of the second conductivity type semiconductor (for example, n-type in the case of ZnO thin film) A buffer layer used in a conventional compound semiconductor-based solar cell may be used in order to alleviate the lattice constant and the band gap energy difference of the buffer layer. As an example, the buffer layer may be a CdS thin film.

The window layer is a layer having a semiconductor characteristic complementary to the photoactive layer and can be used as a window layer used in a conventional compound semiconductor-based solar cell capable of forming a p-n junction with the photoactive layer. For example, the window layer may be a ZnO thin film.

The grid electrode is for collecting current on the surface of the solar cell and may include a finger electrode and a bus bar electrode, and can be used as a front electrode structure and a material used in a conventional compound semiconductor-based solar cell. In one example, the grid electrode may have a fulcrum structure and may be made of Al or a Ni / Al material.

The solar cell according to an embodiment of the present invention may further include an antireflection film formed on the grid electrode, and may be used as an antireflection film used in a conventional compound semiconductor based solar cell. In one example, the antireflection film may be a silicon oxide film.

Hereinafter, the present invention will be described in detail based on practical examples. It is to be understood that the same is by way of example only and is not to be construed as limiting the scope of the present invention. It will be apparent to those skilled in the art that various modifications and variations can be made from this disclosure.

(Production Example 1)

To synthesize a chalcogen compound (composite particle) of Group 11 metal, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 캜 and the second flask was heated to 200 캜. Then, the solution in the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to remove Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

(Production Example 2)

To synthesize a chalcogen compound (composite particle) of Group 11 metal, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 캜 and the second flask was heated to 200 캜. Then, the solution in the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to remove Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

To synthesize the third chalcogen compound, 80 ml of oleylamine was added to the flask and the flask temperature was fixed at 60 캜. Then, the flask _{In (acac) 3 (acac =} acetylacetonate, pentane-2,4-dione) 8 mmol and followed by the addition of 12 mmol Se powder, the temperature was increased to 290 ℃ maintained at 290 ℃ for 1 hour to In ₂ Se ₃ nanoparticles were synthesized. Thereafter, the synthesized chalcogen compound particles were separated by centrifugation and washed with toluene.

Cu ₂ Se nanoparticles (composite particles) and In ₂ Se ₃ nanoparticles containing a CuSe secondary phase were added to toluene to prepare 20 wt% particles (CuSe nanoparticles, Cu ₂ Se nanoparticles and In ₂ Se ₃ nanoparticles) was prepared. The molar ratio of In of the Cu: In ₂ Se ₃ nanoparticles of the composite particles as the copper chalcogen compound particles in the produced ink was 1: 1. At this time, ball milling was carried out at 20 Hz for 60 minutes for homogeneous mixing of the ink.

After the Mo electrode is deposited soda and a bar coating ink prepared in the lime glass substrate, and dried at 80 ℃, heating the Se powder in 230 ℃ and the CuInSe ₂ thin film by heating the glass substrate on which the ink is applied at 530 ℃ temperature Photoactive layer was prepared. The pressure in the heat treatment chamber was 10 ^-5 torr.

(Production Example 3)

To synthesize a chalcogen compound (composite particle) of Group 11 metal, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 캜 and the second flask was heated to 200 캜. Then, the solution in the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to remove Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

To synthesize the third chalcogen compound, 80 ml of oleylamine was added to the flask and the flask temperature was fixed at 60 캜. Then, the flask _{In (acac) 3 (acac =} acetylacetonate, pentane-2,4-dione) 8 mmol and followed by the addition of 12 mmol Se powder, the temperature was increased to 290 ℃ maintained at 290 ℃ for 1 hour to In ₂ Se ₃ nanoparticles were synthesized. Thereafter, the synthesized chalcogen compound particles were separated by centrifugation and washed with toluene.

Cu ₂ Se nanoparticles (composite particles), In ₂ Se ₃ nanoparticles and Ga ₂ S ₃ (Aldrich) containing a CuSe secondary phase were mixed together with toluene to prepare an ink. The materials were added to toluene such that the molar ratio of Cu: (In + Ga) was 1: 1 and the molar ratio of In: Ga was 7: 3. At this time, the amount of toluene was 400 parts by weight based on 100 parts by weight of the mixed particles. After the particulate phase was added to toluene, ball milling was performed for 60 minutes at 20 Hz for homogeneous mixing to prepare an ink.

After the Mo electrode is deposited soda and a bar coating ink prepared in the lime glass substrate, and dried at 80 ℃, heating the Se powder in 230 ℃ and heat-treating the glass substrate, the ink is applied at 530 ℃ temperature Cu (In _0.7 Ga _0.3 ) (S, Se) ₂ thin film was prepared. The pressure in the heat treatment chamber was 10 ^-5 torr.

(Production Example 4)

To synthesize a chalcogen compound (composite particle) of Group 11 metal, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 캜 and the second flask was heated to 200 캜. Then, the solution in the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to remove Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

Cu ₂ Se nanoparticles (composite particles), ZnS (Aldrich) and SnS (Aldrich) containing a CuSe secondary phase were mixed together with toluene to prepare the ink. The materials were added to toluene such that the molar ratio of Cu: Zn: Sn was 2: 1: 1. At this time, the amount of toluene was 400 parts by weight based on 100 parts by weight of the mixed particles. After the particulate phase was added to toluene, ball milling was performed for 60 minutes at 20 Hz for homogeneous mixing to prepare an ink.

The ink prepared on the soda lime glass substrate on which the Mo electrode was deposited was bar coated and dried at 80 DEG C and then the glass substrate coated with ink was heat-treated at a temperature of 530 DEG C while supplying H ₂ S gas at a flow rate of 100 SCCM Cu ₂ ZnSnS ₄ thin films.

(Production Example 5)

To synthesize a chalcogen compound (composite particle) of Group 11 metal, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 캜 and the second flask was heated to 200 캜. Then, the solution in the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to remove Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

Cu ₂ Se nanoparticles (composite particles), ZnS (Aldrich) and SnS (Aldrich) containing a CuSe secondary phase were mixed together with toluene to prepare the ink. The materials were added to toluene such that the molar ratio of Cu: Zn: Sn was 2: 1: 1. At this time, the amount of toluene was 400 parts by weight based on 100 parts by weight of the mixed particles. After the particulate phase was added to toluene, ball milling was performed for 60 minutes at 20 Hz for homogeneous mixing to prepare an ink.

The ink prepared on the soda lime glass substrate on which the Mo electrode was deposited was bar coated, dried at 80 ° C, heated at 230 ° C and heat-treated at 530 ° C to form a Cu ₂ ZnSn S, Se) ₄ thin film. The pressure in the heat treatment chamber was 10 ^-5 torr.

(Comparative Example 1)

50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 10 mmol of Se powder was added to the second flask. After the first flask was heated to 130 캜 and the second flask was heated to 200 캜, the solution of the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to obtain pure Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

(Comparative Example 2)

50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. Thereafter, the first flask was heated to 130 占 폚 and the second flask was heated to 250 占 폚. Then, the solution of the first flask was instantaneously injected into the second flask and maintained at 250 占 폚 for 1 hour to synthesize copper chalcogen compound nanoparticles Respectively. The synthesized particles were then separated by centrifugation and washed with toluene.

(Comparative Example 3)

50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 3 g (77 mmol) of trioctylphosphine oxide (TOPO) and 10 mmol of Se powder were added to the second flask. After heating the first flask to 130 캜 and the second flask to 150 캜, the solution of the first flask was poured into the second flask at an instant and maintained at 150 캜 for 1 hour.

(Comparative Example 4)

To synthesize Cu ₂ Se nanoparticles, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 10 mmol of Se powder was added to the second flask. After the first flask was heated to 130 캜 and the second flask was heated to 200 캜, the solution of the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to obtain pure Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

To synthesize In ₂ Se ₃ chalcogen compound particles, 80 ml of octylamine was added to the flask, and the flask temperature was fixed at 60 ° C. Then, the flask _{In (acac) 3 (acac =} acetylacetonate, pentane-2,4-dione) 8 mmol and followed by the addition of 12 mmol Se powder, the temperature was increased to 290 ℃ maintained at 290 ℃ for 1 hour to In ₂ Se ₃ particles were synthesized. Thereafter, the synthesized chalcogen compound particles were separated by centrifugation and washed with toluene.

The Cu ₂ Se nanoparticles and In ₂ Se ₃ nanoparticles synthesized to prepare the ink were added to toluene to prepare a dispersion containing 20% by weight of particulate matter. At this time, the Cu: In molar ratio was 1: 1. At this time, ball milling was carried out at 20 Hz for 60 minutes for homogeneous mixing of the ink.

After the Mo electrode is deposited soda and a bar coating ink prepared in the lime glass substrate, and dried at 80 ℃, heating the Se powder in 230 ℃ and the CuInSe ₂ thin film by heating the glass substrate on which the ink is applied at 530 ℃ temperature Photoactive layer was prepared. The pressure in the heat treatment chamber was 10 ^-5 torr.

(Comparative Example 5)

To synthesize Cu ₂ Se nanoparticles, 50 ml of oleylamine was added to each of the two flasks and the temperature was fixed at 60 ° C. Then, 10 mmol of CuCl ₂ was added to the first flask, and 10 mmol of Se powder was added to the second flask. After the first flask was heated to 130 캜 and the second flask was heated to 200 캜, the solution of the first flask was instantaneously injected into the second flask and maintained at 200 캜 for 1 hour to obtain pure Cu ₂ Se nanoparticles were synthesized. The synthesized particles were then separated by centrifugation and washed with toluene.

To synthesize CuSe ₂ nanoparticles, 3.75 g of copper nitrate and 5.16 g of H ₂ SeO ₃ were mixed in a flask containing 200 ml of a polyethylene glycol solvent. The inside of the flask was saturated with Ar atmosphere, and the reaction was carried out at 160 DEG C for 4 hours. Thereafter, washing and separation were carried out through precipitation and centrifugation.

To synthesize In ₂ Se ₃ chalcogen compound particles, 80 ml of octylamine was added to the flask, and the flask temperature was fixed at 60 ° C. Then, the flask _{In (acac) 3 (acac =} acetylacetonate, pentane-2,4-dione) 8 mmol and followed by the addition of 12 mmol Se powder, the temperature was increased to 290 ℃ maintained at 290 ℃ for 1 hour to In ₂ Se ₃ particles were synthesized. Thereafter, the synthesized chalcogen compound particles were separated by centrifugation and washed with toluene.

Cu ₂ Se nanoparticles, CuSe ₂ nanoparticles and In ₂ Se ₃ nanoparticles synthesized for the production of ink were added to toluene to prepare a dispersion containing 20% by weight of particulate matter. At this time, the Cu ₂ Se: CuSe ₂ molar ratio was 1: 1, and the Cu: In molar ratio was 1: 1. At this time, ball milling was carried out at 20 Hz for 60 minutes for homogeneous mixing of the ink.

After the Mo electrode is deposited soda and a bar coating ink prepared in the lime glass substrate, and dried at 80 ℃, heating the Se powder in 230 ℃ and the CuInSe ₂ thin film by heating the glass substrate on which the ink is applied at 530 ℃ temperature Photoactive layer was prepared. The pressure in the heat treatment chamber was 10 ^-5 torr.

(Comparative Example 6)

To synthesize CuSe ₂ nanoparticles, 3.75 g of copper nitrate and 5.16 g of H ₂ SeO ₃ were mixed in a flask containing 200 ml of a polyethylene glycol solvent. The inside of the flask was saturated with Ar atmosphere, and the reaction was carried out at 160 DEG C for 4 hours. Thereafter, washing and separation were carried out through precipitation and centrifugation.

To synthesize In ₂ Se ₃ chalcogen compound particles, 80 ml of octylamine was added to the flask, and the flask temperature was fixed at 60 ° C. Then, the flask _{In (acac) 3 (acac =} acetylacetonate, pentane-2,4-dione) 8 mmol and followed by the addition of 12 mmol Se powder, the temperature was increased to 290 ℃ maintained at 290 ℃ for 1 hour to In ₂ Se ₃ particles were synthesized. Thereafter, the synthesized chalcogen compound particles were separated by centrifugation and washed with toluene.

CuSe ₂ nanoparticles and In ₂ Se ₃ nanoparticles synthesized to prepare the ink were added to toluene to prepare a dispersion containing 20 wt% of nanoparticles. At this time, the Cu: In molar ratio was 1: 1. At this time, ball milling was carried out at 20 Hz for 60 minutes for homogeneous mixing of the ink.

After the Mo electrode is deposited soda and a bar coating ink prepared in the lime glass substrate, and dried at 80 ℃, heating the Se powder in 230 ℃ and the CuInSe ₂ thin film by heating the glass substrate on which the ink is applied at 530 ℃ temperature Photoactive layer was prepared. The pressure in the heat treatment chamber was 10 ^-5 torr.

The copper chalcogen compound particles synthesized in Production Example 1 and Comparative Examples 1 to 3 were analyzed using X-ray diffraction, and the results of measurement of the type and the kind of the secondary phase were shown in Table 1.

(Table 1)

As can be seen in Table 1, a first solution containing a Group 11 metal precursor and a surfactant which is a mixture of trioctylphosphine, trioctylphosphine oxide, an acid or a mixture thereof, and a surfactant containing a chalcogen precursor 2 solution, and then the first solution is added to the second solution at a temperature of 160 to 240 ° C, it can be seen that the nanoparticles in which the CuSe and Cu ₂ Se crystal phases are homogeneously aggregated and distributed are synthesized.

In the case of Comparative Example 1 and Comparative Example 2, only pure single phase Cu ₂ Se was produced. In Comparative Example 3, the particles themselves were not synthesized.

As can be seen from FIG. 1 showing the results of X-ray diffraction analysis of the copper chalcogen particles prepared in Production Example 1, nanocrystals in which a high melting point Cu ₂ Se crystal phase and a low melting point CuSe crystal phase are mixed are formed from the synthesis step And a nanoparticle having a weight ratio of CuSe: Cu ₂ Se of 100: 400 is synthesized. As a result of the composition analysis using the TEM apparatus, it can be seen that the crystal phase Cu ₂ Se and CuSe are mixed in one nanoparticle because there is no change in the composition of each nanoparticle.

FIG. 2 is a scanning electron microscope (SEM) image of the copper chalcogen particles prepared in Production Example 1. FIG. As can be seen from FIG. 2, copper chalcogen particles (composite particles) having an average particle size of 40 nm were produced.

3 is a scanning electron micrograph of In ₂ Se ₃ synthesized in Production Example 2. FIG. As can be seen from FIG. 3, it can be seen that chalcogen compound particles of In ₂ Se ₃ were synthesized, and that chalcogen compound particles having an average particle size of 13 nm were synthesized. As a result of X-ray diffraction analysis of the synthesized In ₂ Se ₃ particles, it was confirmed that amorphous particles were produced. As a result of ICP composition analysis, it was confirmed that particles of In ₂ Se ₃ composition were produced.

FIG. 4 is a scanning electron microscope (SEM) image of a cross-section of the photoactive layer prepared in Preparation Example 2. As can be seen from FIG. 4, it can be seen that a thin film having a remarkably improved microstructure of the thin film was produced.

FIG. 5 shows X-ray diffraction results of the photoactive layer prepared in Preparation Example 2. As can be seen from FIG. 5, it can be confirmed that a photoactive layer composed of a single phase of CuInSe ₂ is produced.

FIG. 6 is a graph showing X-ray diffraction results of the copper chalcogen compound particles prepared in Comparative Example 4, showing that only pure Cu ₂ Se particles are synthesized.

FIG. 7 is a scanning electron microscope (SEM) image of the copper chalcogen compound particles prepared in Comparative Example 4, and FIG. 8 is a scanning electron micrograph showing a cross section of the photoactive layer prepared in Comparative Example 4 FIG. As can be seen from FIGS. 7 and 8, the shape and size of the nanoparticles are similar to those of the nanoparticles synthesized in the preparation example. However, as can be seen from the cross-sectional photograph of the prepared photoactive layer, It can be seen that a porous thin film is produced.

9 is a scanning electron micrograph showing a surface of the photoactive layer prepared in Comparative Example 5. FIG. In the case of the photoactive layer prepared from the ink in which the high melting point chalcogen compound and the low melting point chalcogen compound are independently synthesized and physically mixed, unlike the case of the production example using the composite particles in which the high melting point and low melting point crystalline phases are mixed, It is possible to confirm that the mutual chemical reaction between the different crystal phases does not occur effectively and thus has a heterogeneous microstructure.

10 is a scanning electron micrograph showing a surface of the photoactive layer prepared in Comparative Example 6. FIG. Unlike the case of the production example using a composite particle in which a high melting point and a low melting point crystal phase are mixed, in the case of a photoactive layer prepared from an ink composed only of a low melting point chalcogen compound, volatilization of specific crystalline phases occurs due to excessive liquid phase formation during heat treatment do. This results in a nonuniform microstructure and a limitation point that makes it difficult to control the composition of the finally obtained photoactive layer.

Table 2 summarizes the formation of the dense structure of the photoactive layer prepared in Production Examples 2 to 5 and Comparative Examples 4 to 6.

(Table 2)

As shown in Table 2, it can be seen that, in the case of Production Examples 3 to 5, a uniform dense structure was formed in the same manner as in Production Example 2, whereas Comparative Example 4 shows that a porous photoactive layer was produced instead of a dense structure And the photoactive layer prepared in Comparative Examples 5 and 6 had a dense structure, but the uniformity was considerably lowered.

While the present invention has been described in detail with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. All of which fall within the scope of the present invention.

Claims (10)

A first chalcogen compound of a Group 11 metal having a melting point of 600 to 1200 DEG C and a second chalcogen compound of a Group 11 metal having a melting point of 220 to 550 DEG C are mixed in a single particle and a composite particle of Group 12 to Group 14 Or a second chalcogen compound of at least two selected elements. a) a first chalcogen compound of a Group 11 metal having a melting point of 600 to 1200 DEG C and a second chalcogen compound of a Group 11 metal having a melting point of 220 to 550 DEG C are mixed in a single particle, Applying an ink containing a third chalcogen compound of one or more selected elements to a substrate to form a coating film; And
b) subjecting the coating film to a heat treatment to produce a polyvalent chalcogen compound film of one or more elements selected from Group 11 metals and Group 12 to Group 14
≪ / RTI >
delete 3. The method of claim 2,
Wherein the composite particle contains 10 to 900 parts by weight of the first chalcogen compound per 100 parts by weight of the second chalcogen compound. 3. The method of claim 2,
Wherein the first chalcogen compound comprises Cu ₂ Se, the second chalcogen compound comprises CuSe, CuSe _2, or a mixture thereof, and the third chalcogen compound comprises (In _x Ga _1-x ) _{4 S y Se 1-y) 3} , (In x Ga 1-x) (S y Se 1-y), (In x Ga 1-x) 6 (S y Se 1-y) 7, (In x Ga 1 _{-x) 9 (S y Se 1} -y) 11, (In x Ga 1-x) 2 (S y Se 1-y) 3 and _{(In x Ga 1-x)} 5 (S y Se 1-y) These one or more than _2-7 particles (0 ≤ x ≤1 mistake, y is 0 ≤ y ≤1 a real number); including _{or, Sn (S y Se 1-} y), Sn 2 (S y Se 1- for _{y) 3} and _{Sn (S y Se 1-y} ) one or two or more particles selected (y is from ₂ 0 ≤ y ≤1 a real number), and _{Zn (S y Se 1-y} ) particles (y is 0 ≤ y ≤ 1 < / RTI > 3. The method of claim 2,
Wherein the molar ratio of the Group 11 metal contained in the composite particle is 1: 0.7 to 1.2, wherein at least one element selected from Group 12 to Group 14 contained in the third chalcogen compound is contained in the composite particle. 3. The method of claim 2,
Wherein the heat treatment is performed at 400 to 550 占 폚. The method according to claim 6,
Wherein the heat treatment is performed in a chalcogen atmosphere. 3. The method of claim 2,
The composite particles comprising the first chalcogen compound and the second chalcogen compound can be prepared by reacting a first solution containing a Group 11 metal precursor with a surfactant that is trioctylphosphine, trioctylphosphine oxide, or a mixture thereof and a chalcogen precursor And then adding the first solution to the second solution at a temperature of from 160 to 240 ° C to form a chalcogen compound.
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