KR101369274B1 - Atmosperic plasma generating device - Google Patents

Abstract

The present invention relates to an atmospheric pressure plasma generating device, comprising: an anode for generating plasma, a first cathode generating a seed plasma between the anode, and the seed plasma using the seed plasma; And a second cathode for generating a plasma between the anode and the anode is disposed closer to the first cathode than to the second cathode.

Description

Atmospheric pressure plasma generating device {ATMOSPERIC PLASMA GENERATING DEVICE}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an atmospheric pressure plasma generating device, and more particularly, to a plasma generating device that can stably generate an atmospheric pressure plasma under a low voltage condition and can be formed in an integrated form on a small substrate.

In general, a plasma is a fourth material state composed of ions, electrons, radicals, and neutral particles generated by an externally applied electric field and the like, and is a macroscopic state of electrical neutrality. It is widely used in the fields such as surface modification, etching, coating, sterilization, disinfection, ozone generation, dyeing, wastewater, tap water purification, air purification, and high brightness lamps.

These plasmas can be classified into low pressure (several mmTorr to several Torr) plasmas and atmospheric pressure (several Torr to 760 Torr) plasmas according to the generated pressure. Dual low pressure plasmas are easy to generate plasma, but the vacuum to maintain the low pressure state The additional equipment such as the chamber, the exhaust device is required to be bulky device, the cost of these equipment is also expensive. On the other hand, since the atmospheric plasma generates the plasma at atmospheric pressure (760 Torr), expensive vacuum equipment is not required and the continuous process is possible.

On the other hand, the conventional atmospheric plasma apparatus generates an atmospheric plasma using a high voltage of thousands, tens of thousands of volts (V), and the volume is smaller than the low-pressure plasma apparatus, but still composed of a large volume compared to the general apparatus. It has been difficult to apply to various fields such as miniaturized devices or medical devices. Specifically, since the high voltage is used as the discharge start voltage, it is difficult to apply to devices directly affecting life, and there is a limit in miniaturizing the electrode configuration of the cathode and the anode disposed at a predetermined distance. It was difficult to apply to small devices.

Therefore, it is possible to stably generate atmospheric plasma even with low voltage of several hundred volts, can be easily applied to small devices, and based on these characteristics, it can be applied to various fields where conventional atmospheric plasma apparatus was difficult to apply. There is a demand for development of an atmospheric pressure plasma generating device.

The present invention has been made in order to satisfy the above-mentioned technical requirements, and it is an object of the present invention to solve the above problems and to provide a technique which can not be easily developed by those skilled in the art.

In the atmospheric pressure plasma generating device according to an embodiment of the present invention, it is a problem to significantly lower the minimum discharge voltage of the atmospheric pressure plasma.

In addition, a plasma generating device according to an embodiment of the present invention, it is a problem to be able to miniaturize the atmospheric pressure plasma generating device.

In addition, a plasma generating device according to an embodiment of the present invention, it can be formed in an integrated form on a small substrate as a problem.

In addition, the plasma generating device according to an embodiment of the present invention is to apply atmospheric pressure plasma technology to an application field that is difficult to apply due to the characteristics (high voltage, large size) of the conventional atmospheric pressure plasma apparatus.

Atmospheric pressure plasma generating device according to an embodiment of the present invention for solving the above problems, an anode (anode) for plasma generation; A first cathode generating a seed plasma between the anode and the anode; And a second cathode for generating a plasma between the anode and the anode using the seed plasma, wherein the anode is disposed closer to the first cathode than the second cathode.

In addition, the atmospheric pressure plasma generating device according to an embodiment of the present invention, the anode, the first cathode and the second cathode is characterized in that formed on the substrate.

In addition, the atmospheric pressure plasma generating device according to an embodiment of the present invention, characterized in that the anode, the first cathode and the second cathode form a group, a plurality of the groups are integrated on a small substrate. .

In addition, the atmospheric pressure plasma generating device according to an embodiment of the present invention, the substrate is characterized in that the glass, silicon or flexible (flexible) substrate.

In the atmospheric pressure plasma generating device according to an embodiment of the present invention, a low voltage is applied to the anode, the first cathode, or the second cathode.

In addition, the atmospheric pressure plasma generating device according to an embodiment of the present invention, the low voltage is characterized in that 100 to 600V.

In addition, the atmospheric pressure plasma generating device according to an embodiment of the present invention, the distance between the anode and the first cathode is arranged at a distance of a micrometer (μm) scale that can initiate a plasma discharge even at a low voltage It is characterized by.

In addition, in the atmospheric pressure plasma generating device according to an embodiment of the present invention, the distance between the anode and the second cathode is longer than the distance between the anode and the first cathode, and the plasma discharge cannot be started at a low voltage. Characterized in that arranged at a distance.

In addition, in the atmospheric pressure plasma generating device according to an embodiment of the present invention, the distance between the first cathode and the second cathode is longer than the distance between the anode and the first cathode, the anode, the first cathode, the first The two cathodes are characterized in that they are arranged in an asymmetric structure.

In the atmospheric pressure plasma generating device according to an embodiment of the present invention, a pulse power source is connected between the anode and the first cathode, and a DC or AC power source is connected between the anode and the second cathode. do.

Atmospheric pressure plasma generating device according to an embodiment of the present invention, it is possible to significantly lower the minimum discharge voltage of the atmospheric pressure plasma. Specifically, atmospheric pressure plasma can be stably generated even through a discharge voltage of several hundred volts (V) which is significantly lower than that of the prior art.

In addition, the plasma generating device according to an embodiment of the present invention can reduce the atmospheric pressure plasma generating device. Specifically, the plasma can be stably generated even in a miniaturized state through three electrode structures having a difference in relative placement distances.

In addition, in the plasma generating device according to an embodiment of the present invention, even if electrodes are disposed at very close (micrometer scale) distances for low voltage operation, the problem that the electrodes are stuck by sputtering does not occur.

In addition, the plasma generating device according to an embodiment of the present invention, stably forms the atmospheric plasma in the horizontal direction on the substrate, it is possible to smoothly supply the ions, electrons and radicals generated in the horizontal direction out of the substrate. Therefore, it can be applied to various products in the form of a substrate to supply sufficient plasma.

In addition, the plasma generating device according to an embodiment of the present invention may be formed in an integrated form on a small substrate. Therefore, it can be applied to various devices in the form of plasma-on-chip.

In addition, the plasma generating device according to an embodiment of the present invention may apply atmospheric pressure plasma technology to an application field that is difficult to be applied on the characteristics (high voltage, large size device) of the conventional atmospheric pressure plasma device. Specifically, through miniaturization and low voltage characteristics, it can be applied to various fields such as a micro gas analyzer, a precise ozone generator, and a medical device.

1 is a view showing an electrode configuration of a plasma generating device according to an embodiment of the present invention.
2 is a view showing an electrode configuration of a plasma generating device according to another embodiment of the present invention.
3 is a diagram showing a power supply configuration of a plasma generating device according to another embodiment of the present invention.
4 is a view showing that the plasma generating device according to an embodiment of the present invention is integrated and formed on a substrate.

Hereinafter, an atmospheric pressure plasma generating device according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The embodiments are provided so that those skilled in the art can easily understand the technical spirit of the present invention, and thus the present invention is not limited thereto. In addition, matters represented in the accompanying drawings may be different from the form actually embodied in the schematic drawings in order to easily explain the embodiments of the present invention.

Hereinafter, an atmospheric pressure plasma generating device according to an embodiment of the present invention will be described with reference to FIG. 1.

Referring to FIG. 1, an atmospheric pressure plasma generating device according to an embodiment of the present invention includes an anode 100 for generating plasma and a first cathode for generating a seed plasma between the anode and the anode. cathode, 200), a substrate 400 on which the cathode, the first cathode, and the second cathode, which generates plasma between the anode and the anode, may be formed using the seed plasma. It may include.

The anode 100 is an electrode for plasma generation, and refers to a configuration in which a plasma discharge electrode is formed with the first cathode 200 and the second cathode 300 to discharge plasma under atmospheric pressure.

In addition, the first cathode 200 refers to a plasma electrode for generating a seed plasma 110 between the anode 100.

The second cathode 300 uses the seed plasma 110 generated between the anode 100 and the first cathode 200 to generate an atmospheric pressure plasma 120 between the anode 100 and the anode 100. It means the structure to generate | occur | produce. Specifically, after glow ions and electrons by the seed plasma 110 may be used as an initial carrier, and an atmospheric pressure plasma 120 may be generated through a glow discharge.

Looking at the electrode arrangement of the anode 100, the first cathode 200 and the second cathode 300, the three electrodes are arranged to be different in the relative distance to each other, preferably the anode 100-first The distance of the cathode 200 should be arranged to be shorter than the distance of the anode 100 to the second cathode 300. Specifically, the distance between the anode (100) and the first cathode (200) is a close distance (micrometer scale, for example, a low voltage of 300V) that can cause an initial plasma discharge at a low voltage (hundreds V) according to Pachen's Law (Pachen's Law). In the case of application, the distance between the anode 100 and the second cathode 300 should be longer than the distance between the anode 100 and the first cathode 200 (several hundred μm scale). The seed plasma 110 by the initial discharge may be formed between the anode 100 and the first cathode 200 only by the electrode arrangement, and the anode may be formed based on the seed plasma 110. This is because a stable atmospheric pressure plasma 120 can be generated between the (100) -second cathode 300. (Meanwhile, the distance between the first cathode 200 and the second cathode 300 is preferably longer than the distance between the anode 100 and the first cathode 200. The anode 100 and the first cathode 200 may be disposed longer than the distance between the anode 100 and the first cathode 200. The cathode 200 and the second cathode 300 are preferably arranged in an asymmetric structure.)

In addition, the anode 100, the first cathode 200, and the second cathode 300 is connected to a power supply for supplying the power required for plasma generation, the power supply is the anode 100, the first When a voltage is applied between the cathode 200 or the second cathode 300, a low voltage of several hundred volts (V) scale is applied. Therefore, a conventional atmospheric plasma in which a high voltage of thousands or tens of thousands of volts (V) is applied is applied. Compared to the generating device, an atmospheric pressure plasma is generated while applying a significantly lower voltage.

Specifically, a low voltage (hundreds V) is applied to the anode 100, the first cathode 200, and the second cathode 300 by the power supply device. The anode 100-the first cathode 200 are first applied. A low voltage (hundreds V) may be applied only during an initial predetermined time to induce the seed plasma 110, and a low voltage (hundreds V) between the anode 100 and the second cathode 300 during the entire operation time. ) May be applied. Therefore, the seed plasma 110 is generated by a low voltage applied between the anode 100 and the first cathode 200 during an initial predetermined time, and the seed plasma 110 is continuously supplied with the low voltage. As it is transferred between the (100) -second cathode 300, the discharge of atmospheric pressure plasma 120 occurs continuously.

Meanwhile, the power supply device may be configured in various forms. Specifically, the power supply device may include various power supplies such as a DC power supply, an AC power supply, and an RF power supply that satisfy low voltage conditions (effective values, peak values, and the like).

The substrate 400 has a configuration that can serve as a body in which the anode 100, the first cathode 200, and the second cathode 300 can be disposed, and is formed in various shapes such as polygons and circles. It may be formed in the form of a small substrate preferably on the scale of several tens of square millimeters or less. In addition, the material of the substrate 400 may be formed in various ways, such as glass, silicon, a flexible substrate.

The anode 100, the first cathode 200, and the second cathode 300 are disposed at a predetermined distance on the substrate 400. Preferably, the anode 100 is disposed on the first cathode ( It is preferred to be disposed closer to the second cathode 300 than to 200. In addition, the anode 400, the first cathode 200, and the second cathode 300 are disposed on a micrometer scale in the substrate 400. One cathode 200 and a plurality of second cathodes 300 may be formed in an integrated form on the substrate 400. Accordingly, the atmospheric pressure plasma generating device can be standardized / standardized through a medium such as a substrate 400, and the standardized / standardized substrate 400 can be formed in a small size and applied to various application fields.

On the other hand, the plasma generating device according to an embodiment of the present invention can be connected to the reaction gas supply device, it is possible to cause the plasma discharge by using the reaction gas supplied by the reaction gas supply device. Specifically, the reaction gas by the reaction gas supply device may be supplied between the anode 100-the first cathode 200 and the anode 100-the second cathode 300 to generate a plasma discharge, Here, the reaction gases may be formed in various kinds such as argon, helium, nitrogen, oxygen, air, or a mixture thereof.

The above-described salping atmospheric pressure plasma generating device according to an embodiment of the present invention, using the three electrodes of the anode 100, the first cathode 200, the second cathode 300, the anode 100- The electrode arrangement distances of the first cathode 200 and the anode 100 to the second cathode 300 are different from each other, so that plasma can be stably generated even under conditions of low voltage and miniaturization.

Specifically, the atmospheric pressure plasma generating device according to an embodiment of the present invention, the distance between the anode 100 and the first cathode 200 is a close distance (for example, a low voltage of 300V to start the plasma discharge even at a low voltage) In the case of applying, it is formed to about 10㎛), by applying a low voltage only for an initial predetermined time, it is possible to prevent the anode (100)-the first cathode (200) is stuck to the electrode, the anode (100)- Since the distance between the two cathodes 300 can also be sufficiently spaced apart, it is possible to prevent the anode 100 and the second cathode 300 from sticking to each other by sputtering. (Anode 100-Second cathode 300 In the plasma discharge, since the plasma generated from the anode 100-the first cathode 200 is used as a seed, it does not need to be disposed as close as the distance according to the Paschen law.)

For reference, in order to generate a plasma at a low voltage (hundreds of V), the electrode of the anode (100) -cathode should be disposed at a very close distance on the micrometer scale according to Pachen's Law. Placement could cause a problem that the anode 100-cathode is shorted as the plasma generation process proceeds (sputtering may be caused by the generated plasma, which is so close that the spacing between electrodes is too close). Electrode could stick). Therefore, the conventional atmospheric pressure plasma apparatus which maintains the arrangement distance of the anode 100-cathode constant has been difficult to operate at a low voltage or downsizing due to the above problems.

Hereinafter, an atmospheric pressure plasma generating device according to another embodiment of the present invention will be described with reference to FIGS. 2 to 3.

First, referring to FIG. 2, an atmospheric pressure plasma generating device according to an exemplary embodiment of the present invention may include an anode 100, a first cathode 200, and a second electrode formed on a substrate 400. A cathode 300 may be included, wherein the anode 100-the first cathode 200 have a distance spaced in a direction perpendicular to the substrate 400, and the anode 100-the second cathode ( 300 has a distance spaced apart from the substrate 400 in a horizontal direction. Therefore, when a low voltage (hundreds of V) is applied between the anode 100-the first cathode 200 and the anode 100-the second cathode 300, the anode 100-the first cathode 200. Atmospheric pressure plasma 110 (seed plasma) in the vertical direction is generated between, and since the atmospheric pressure plasma 120 in the horizontal direction (plasma is formed in the horizontal direction on the substrate, between the anode 100-second cathode 300, Generated ions, electrons and radicals smoothly out of the substrate).

On the other hand, the distance between the anode 100 and the first cathode 200 should be short enough to allow an initial plasma discharge even at low voltages of several hundreds V according to Pacene's law. For example, 300V is applied at a low voltage. In this case, the distance should be about 10 μm. In addition, the distance between the anode 100 and the second cathode 300 prevents both electrodes from sticking to each other by sputtering, which may occur when plasma discharge occurs, and generates ions, electrons, and In order to smoothly feed radicals out of the substrate, they should be spaced at a sufficient distance, preferably at a distance of several hundred micrometers longer than the distance between the anode 100 and the first cathode 200. Therefore, when 300V is applied at a low voltage, it is preferable to space the two electrodes at a distance of 200 μm or more. (For the plasma discharge of the anode 100-the second cathode 300, the anode 100-the first cathode. Since the plasma generated at 200 is used as a seed, it does not need to be disposed as close as the distance according to Passen's law)

For reference, the distance between the first cathode 200 and the second cathode 300 may be longer than the distance between the anode 100 and the first cathode 200, and the anode 100 and the first cathode 200 may be disposed longer. The cathode 200 and the second cathode 300 are preferably arranged in an asymmetric structure.

Next, when the power is connected to the atmospheric pressure plasma generating device according to another embodiment of the present invention, the anode 100-the first cathode 200 and the anode 100-the second cathode 300 A power source should be connected so that a low voltage can be applied. Preferably, a power source is connected between the anode 100 and the first cathode 200 so that a low voltage can be applied only for an initial predetermined time, and the anode 100 Power may be connected between the second cathode 300 so that a low voltage can be applied during the entire operation time. In addition, the low voltage may be a voltage of preferably 100 to 600V.

Looking at an example with reference to Figure 3, the anode 100 may be connected to a DC power supply of 300V, the first cathode 200 is a pulse power supply (maintaining a voltage of 0V only during the initial predetermined time and after 300V Pulse height), and the second cathode 300 may be formed as a ground electrode. Therefore, a potential difference of 300 V is formed between the anode 100 and the first cathode 200 only for an initial predetermined time by these power supplies, and the total operating time is between the anode 100 and the second cathode 300. A potential difference of 300 V is formed during the seed discharge. Thus, a seed plasma 110 is generated between the anode 100 and the first cathode 200, and the anode 100 is formed through the seed plasma 110. Atmospheric pressure plasma 120 discharge occurs between the two cathodes 300.

On the other hand, the appearance that the power is connected to the atmospheric pressure plasma generating device according to another embodiment of the present invention is not limited to the above-described embodiment, using a variety of power supply devices such as DC power, AC power, RF power, pulse power It may be configured in various forms. In detail, in the embodiment of FIG. 3, the power applied to the second cathode may be configured in the form of a pulse to form a pulse atmospheric pressure plasma, and may be configured in various forms.

Hereinafter, referring to FIG. 4, the atmospheric pressure plasma generating device according to the present invention will be described in the form of being integrated on the substrate 400.

Referring to FIG. 4, an atmospheric pressure plasma generating device according to embodiments of the present invention may be integrated and formed on a substrate 400. Specifically, the anode 100, the first cathode 200, and the second cathode 300 form one unit group, and the plurality of groups are integrated on the substrate 400 to form a chip. -on-chip plasma electrodes can be formed.

On the other hand, the atmospheric pressure plasma generating device according to the embodiments of the present invention, the electrode of the anode 100, the first cathode 200, the second cathode 300 to operate in a low voltage (hundreds V) conditions Are disposed at a distance of a micrometer scale, and thus, even on the small substrate 400 as shown in FIG. 4, a plurality of plasma electrode groups can be integrated through MEMS technology.

Therefore, the atmospheric pressure plasma generating device can be standardized / standardized in the form of a small chip operable at a low voltage, and can be applied to various application fields through the standardized / standardized small chip. Specifically, it may be used in the precision processing field, medical device field, micro gas analyzer, ozone generator, etc., and may be applied to environmental devices such as sterilization deodorizer and air cleaner.

Salping, the atmospheric pressure plasma generating device according to the embodiments of the present invention, can significantly lower the minimum discharge voltage of the atmospheric pressure plasma. Specifically, atmospheric pressure plasma can be stably generated even through a discharge voltage of several hundred volts (V) which is significantly lower than that of the prior art.

In addition, the plasma generating device according to the embodiments of the present invention can reduce the atmospheric pressure plasma generating device. Specifically, the plasma can be stably generated even in a miniaturized state through three electrode structures having a difference in relative placement distances.

In addition, in the plasma generating device according to the embodiments of the present invention, even if the electrode is disposed at a very close distance (micrometer scale) for low voltage operation, the problem that the electrode is stuck by sputtering does not occur.

In addition, the plasma generating device according to an embodiment of the present invention, stably forms the atmospheric plasma in the horizontal direction on the substrate, it is possible to smoothly supply the ions, electrons and radicals generated in the horizontal direction out of the substrate. Therefore, it can be applied to various products in the form of a substrate to supply sufficient plasma.

In addition, the plasma generating device according to the embodiments of the present invention may be formed in an integrated form on the small substrate 400. Therefore, it can be applied to various devices in the form of plasma-on-chip.

In addition, the plasma generating device according to the embodiments of the present invention may apply atmospheric pressure plasma technology to an application field that is difficult to apply on the characteristics (high voltage, large size device) of the conventional atmospheric pressure plasma device. Specifically, through miniaturization and low voltage characteristics, it can be applied to various fields such as a micro gas analyzer, a precise ozone generator, and a medical device.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, , Changes and additions should be considered to fall within the scope of the claims of this patent.

100: anode 110: seed plasma
120: atmospheric plasma 200: first cathode
300: second cathode 400: substrate

Claims (10)

An anode for plasma generation;
A first cathode configured to generate a seed plasma when a low voltage in a range of 100 to 600 V is applied between the anode; And
A second cathode for generating a plasma between the anode using the seed plasma;
Lt; / RTI >
The first cathode is located in a space between the anode and the second cathode,
The distance between the anode and the first cathode is arranged at a distance of a micrometer (μm) scale so that the seed plasma can be generated,
The distance between the first cathode and the second cathode is longer than the distance between the first cathode and the anode, so that the anode and the second cathode are arranged in an asymmetric structure with respect to the first cathode. Plasma generating element.
The method of claim 1,
And said anode, said first cathode and said second cathode are formed on a substrate.
3. The method of claim 2,
And said anode, said first cathode and said second cathode form one group, and said plurality of groups are integrated on a small substrate.
The method of claim 3, wherein
And the substrate is glass, silicon, or a flexible substrate.
delete delete delete The method of claim 1,
The distance between the anode and the second cathode is longer than the distance between the anode and the first cathode, the atmospheric pressure plasma generating element, characterized in that arranged at a distance that can not start the plasma discharge at the low voltage.
delete The method of claim 1,
Pulse power is connected between the anode and the first cathode, DC or AC power is connected between the anode and the second cathode, atmospheric pressure plasma generating device.

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