KR101360947B1 - Semiconductor memory device - Google Patents

Abstract

The present invention relates to a semiconductor memory device, comprising at least one word line, at least one cell bit line, and at least one memory cell disposed in an area where at least one word line and at least one cell bit line intersect. At least one bit line and at least one bit line disposed above or below the memory cell array so as to planarly overlap the memory cell array, and corresponding to at least one cell bit line. A at least one sense amplifier coupled to the complementary bit line of the at least one sense cell, the at least one sense amplifier being configured to sense data stored in at least one memory cell; A decompression unit for depressurizing a signal having a low voltage level among the signals, at least A booster for boosting a signal having a high voltage level among a signal of one bit line and a signal of at least one complementary bit line, and an equalizer for equalizing a signal of at least one bit line and a signal of at least one complementary bit line Include.

Description

Semiconductor memory device < RTI ID = 0.0 >

The present invention relates to a semiconductor memory device, and more particularly, to a semiconductor memory device having a structure in which a memory cell array and a sense amplifier overlap in plan.

Semiconductor memory devices that store data may be classified into volatile memory devices and non-volatile memory devices. Volatile memory devices lose their stored data when their power supplies are interrupted, while nonvolatile memory devices retain their stored data even when their power supplies are interrupted.

SUMMARY An object of the present invention is to provide a semiconductor memory device, a memory card including the semiconductor memory device, and an electronic system including the semiconductor memory device capable of improving the degree of integration by reducing the planar area of the semiconductor device.

According to an embodiment of the present disclosure, a semiconductor memory device may include at least one word line, at least one cell bit line, and an area where the at least one word line and the at least one cell bit line cross each other. A memory cell array including at least one memory cell disposed in the memory cell; And at least one bit line disposed above or below the memory cell array so as to planarly overlap the memory cell array, and at least one bit line connected to the at least one cell bit line, and at least one bit line corresponding to the at least one bit line. A at least one sense amplifier coupled to a complementary bit line and sensing data stored in the at least one memory cell, wherein the at least one sense amplifier comprises a signal of the at least one bit line and the at least one complement A decompression unit for decompressing a signal having a low voltage level among the signals of the bit line; A booster boosting a signal having a high voltage level among the signal of the at least one bit line and the signal of the at least one complementary bit line; And an equalizer for equalizing the signal of the at least one bit line and the signal of the at least one complementary bit line.

In some embodiments, the at least one cell bit line extends along a first direction, and the at least one word line, the at least one bit line, and the at least one complementary bit line are in the first direction. It may extend parallel to each other along the second vertical direction.

In at least one example embodiment, the at least one sense amplifier may further include a loading capacitor connected to the complementary bit line.

In some embodiments, the memory cell array may further include at least one first sense amplifier control line that provides a plurality of control signals to the at least one sense amplifier and extends along the first direction. Can be.

In example embodiments, the memory cell array may further include at least one additional memory cell disposed in an area where the at least one first sense amplifier control line and the at least one word line cross each other.

In some embodiments, the memory cell array may further include at least one second sense amplifier control line connected to the at least one first sense amplifier control line and extending along the second direction. .

The at least one output device may further include at least one output device connected to the at least one sense amplifier such that the memory cell array and the at least one sense amplifier are not planarly overlapped with each other. The signal of the at least one bit line may be transmitted to the output line.

In at least one example embodiment, the at least one sense amplifier may further include a precharge unit configured to precharge the at least one bit line to a precharge voltage.

In addition, a memory card according to an embodiment of the present invention for solving the above problems is a memory unit including a semiconductor memory device according to the above embodiments; And a controller for controlling the memory unit.

In addition, an electronic system according to an embodiment of the present invention for solving the above problems includes a memory unit including a semiconductor memory device according to the above embodiments; A processor communicating with the memory unit through a bus; And an input / output device for communicating with the bus.

According to another aspect of the present invention, a semiconductor memory device is provided. The semiconductor memory device may include a memory cell array disposed in a first layer of a first region and including at least one memory cell disposed in an area where at least one word line and at least one cell bit line cross each other; Disposed on a second layer different from the first layer, the at least one bit line connected to the at least one cell bit line, and the at least one complementary bit line corresponding to the at least one bit line; At least one sense amplifier configured to sense data stored in one memory cell; And a local interconnect via disposed in the first region and connecting the cell bit line and the bit line.

According to an example of the semiconductor memory device, the at least one sense amplifier may be planarly overlapped with the memory cell array, and the local interconnect via may extend between the cell bit line and the bit line.

According to another example of the semiconductor memory device, the at least one memory cell included in the memory cell array includes: a switching element extending vertically on the cell bit line and controlled by the at least one word line; And a storage device electrically connected to the switching device.

According to another example of the semiconductor memory device, the switching element may include a first source / drain connected to the cell bit line, a second source / drain connected to the storage element, and the first source / drain and the second source / It may be a vertical channel type transistor including a channel active layer located between drains.

According to another example of the semiconductor memory device, the storage element may include a capacitor, a phase change layer, or a resistance change layer.

According to another example of the semiconductor memory device, the switching element is a diode including a p-type layer and an n-type layer, the storage element includes a phase change layer or a resistance change layer, the diode and the cell bit line Or between the diode and the word line.

According to another example of the semiconductor memory device, the semiconductor memory device may further include at least one output element connected to the at least one cell bit line.

According to another example of the semiconductor memory device, the semiconductor memory device may further include an output via extending between the cell bit line and the output element, and the output via may be disposed in an area different from the first area.

According to another example of the semiconductor memory device, the semiconductor memory device is disposed in the first layer of the second region different from the first region, wherein the at least one word line and the at least one sense amplifier control line cross each other. A dummy cell array including at least one dummy cell disposed in the region; And a signal via disposed in the second region and connecting the sense amplifier control line and the sense amplifier.

According to another example of the semiconductor memory device, the cell bit line and the sense amplifier control line may extend in substantially the same direction.

According to another example of the semiconductor memory device, the at least one dummy cell includes a switching element extending vertically on the sense amplifier control line and controlled by the at least one word line, wherein the switching element is May be electrically floating.

According to another example of the semiconductor memory device, the switching element may include a first source / drain connected to the sense amplifier control line, a second source / drain directly connected to an insulating layer, and the first source / drain and the second source. It may be a vertical channel type transistor including a channel active layer positioned between the source / drain.

According to another example of the semiconductor memory device, the semiconductor memory device includes a switching element vertically extending on the sense amplifier control line and controlled by the at least one word line, the switching element being inoperable. It may be in an inoperable state.

According to another example of the semiconductor memory device, the at least one dummy cell further includes a storage element formed on the switching element, wherein the switching element comprises: a first source / drain connected to the sense amplifier control line, the storage At least one component of a vertical channel transistor including a second source / drain connected to the device and a channel active layer positioned between the first source / drain and the second source / drain may be removed.

According to another example of the semiconductor memory device, the at least one dummy cell further includes a storage element formed on the switching element, wherein the switching element comprises: a first source / drain connected to the sense amplifier control line, the storage At least two components of a vertical channel transistor comprising a second source / drain connected to the device and a channel active layer positioned between the first source / drain and the second source / drain are not electrically connected to each other and are opened. It may be an open structure.

According to another example of the semiconductor memory device, the semiconductor memory device further includes an input via connected to the cell bit line and transferring control signals for driving a sense amplifier, wherein the input via includes the first region and It may be disposed in an area different from the second area.

According to an embodiment of the present invention, by arranging the sense amplifiers above or below the memory cell array in the semiconductor memory device, the memory cell array and the sense amplifiers may have a structure overlapping in a plane. Accordingly, since the planar area occupied by the sense amplifier in the semiconductor memory device can be reduced, the integration degree of the semiconductor memory device can be greatly improved.

In addition, according to an embodiment of the present invention, even if the pitch of the cell bit line is reduced, the sense amplifier can be easily implemented without having high-resolution exposure equipment. In addition, according to an embodiment of the present invention, since the complementary bit line may be included in the sense amplifier, noise may be prevented from occurring between adjacent memory cells by the complementary bit line.

In addition, according to an embodiment of the present invention, a portion of the plurality of cell bit lines or the plurality of word lines may be used as sense amplifier control lines that provide control signals for driving the sense amplifier. Accordingly, since a separate wiring process for providing sense amplifier control lines is not required, the process can be simplified.

In addition, according to an embodiment of the present invention, since the memory cells are not provided on the plurality of sense amplifier control lines, electrical fatigue of the semiconductor memory device may be reduced and malfunction of the sense amplifier may be prevented.

In addition, a memory card according to an embodiment of the present invention for solving the above problems is a memory unit including a semiconductor memory device according to the above-described embodiments; And a controller for controlling the memory unit.

In addition, an electronic system according to an embodiment of the present invention for solving the above problems includes a memory unit including a semiconductor memory device according to the above-described embodiments; A processor communicating with the memory unit through a bus; And an input / output device for communicating with the bus.

1 is a block diagram schematically illustrating a semiconductor memory device according to example embodiments.
FIG. 2 is a circuit diagram schematically illustrating an example of a sense amplifier included in the semiconductor memory device of FIG. 1.
3 is a circuit diagram schematically illustrating a modified embodiment of the sense amplifier of FIG. 2.
4 is a block diagram schematically illustrating the sense amplifier of FIGS. 2 and 3.
FIG. 5 schematically illustrates an example of an arrangement relationship of a plurality of cell bit lines and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4.
6 illustrates a semiconductor memory device having the arrangement relationship of FIG. 5.
FIG. 7 schematically illustrates another example of an arrangement relationship of a plurality of cell bit lines, a plurality of sense amplifier control lines, and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4.
FIG. 8 illustrates a semiconductor memory device having the arrangement relationship of FIG. 7.
9 illustrates a modified embodiment of FIG. 8.
10 is a diagram illustrating an arrangement relationship of a plurality of cell bit lines, a plurality of first sense amplifier control lines, a plurality of second sense amplifier control lines, and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4. Another example is shown schematically.
11 illustrates a semiconductor memory device having the arrangement relationship of FIG. 10.
FIG. 12 shows a first modified embodiment of FIG. 11.
FIG. 13 shows a second modified embodiment of FIG. 11.
FIG. 14 shows a third modified embodiment of FIG. 11.
15 is a schematic diagram illustrating a memory card according to an embodiment of the present invention.
16 is a block diagram schematically illustrating an electronic system according to an embodiment of the present invention.
17 is a circuit diagram schematically illustrating a semiconductor memory device according to example embodiments.
FIG. 18 is a plan view illustrating a portion P of the semiconductor memory device of FIG. 17 actually implemented.
19 is a cross-sectional view taken along line X19-X19 'of FIG. 18.
20 is a cross-sectional view taken along line X20-X20 'of FIG. 18.
FIG. 21 is a cross-sectional view taken along line Y21-Y21 'of FIG. 18.
FIG. 22 is a plan view illustrating a portion of the semiconductor memory device of FIG. 17 implemented according to some embodiments of the inventive concept.
FIG. 23 is a cross-sectional view taken along line X23-X23 'of FIG. 22.
24 is a cross-sectional view taken along line X24-X24 'of FIG. 22.
25 is a cross-sectional view taken along line Y25-Y25 'of FIG. 22.
FIG. 26 is a plan view illustrating a portion of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept. FIG.
FIG. 27 is a cross-sectional view taken along line X27-X27 'of FIG. 26.
FIG. 28 is a cross-sectional view taken along line X28-X28 'of FIG. 26.
FIG. 29 is a cross-sectional view taken along line Y29-Y29 'of FIG. 26.
30 to 37 are top plan views illustrating portions of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept.
38 to 40 are top plan views illustrating portions of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept.
41 to 48 are cross-sectional views and plan views schematically illustrating a method of manufacturing a semiconductor memory device in accordance with exemplary embodiments of the present invention, according to a process sequence.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are described in order to more fully explain the present invention to those skilled in the art, and the following embodiments may be modified into various other forms, It is not limited to the embodiment. Rather, these embodiments are provided so that this disclosure will be more faithful and complete, and will fully convey the scope of the invention to those skilled in the art.

In the following description, when a layer is described as being on top of another layer, it may be directly on top of the other layer, with a third layer intervening therebetween. In the drawings, the thickness and size of each layer are exaggerated for convenience and clarity of description, and the same reference numerals refer to the same elements in the drawings. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms "a," "an," and "the" include singular forms unless the context clearly dictates otherwise. Also, " comprise "and / or" comprising "when used herein should be interpreted as specifying the presence of stated shapes, numbers, steps, operations, elements, elements, and / And does not preclude the presence or addition of one or more other features, integers, operations, elements, elements, and / or groups.

Although the terms first, second, etc. are used herein to describe various elements, components, regions, layers and / or portions, these members, components, regions, layers and / It is obvious that no. These terms are only used to distinguish one member, component, region, layer or section from another region, layer or section. Thus, a first member, component, region, layer or section described below may refer to a second member, component, region, layer or section without departing from the teachings of the present invention.

Hereinafter, embodiments of the present invention will be described with reference to the drawings schematically showing ideal embodiments of the present invention. In the figures, for example, variations in the shape shown may be expected, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the present invention should not be construed as limited to any particular shape of the regions illustrated herein, including, for example, variations in shape resulting from manufacturing. Also, in the accompanying drawings, like reference numerals refer to like elements.

1 is a block diagram schematically illustrating a semiconductor memory device according to example embodiments.

Referring to FIG. 1, the semiconductor memory device 1 may include a memory cell array 10 and a sense amplifier block 20. In addition, the semiconductor memory device 1 may further include an output unit 30.

The memory cell array 10 is an area where a plurality of word lines WL, a plurality of cell bit lines BLC, and a plurality of word lines WL and a plurality of cell bit lines BLC cross each other. It may include a plurality of memory cells (MC) disposed in each of the. Here, the plurality of memory cells MC may be volatile memory cells such as DRAM, resistive memory cells such as phase-change RAM (PRAM), resistive RAM (RRAM), or the like, and may be a nano floating gate memory (NFGM). It may also be a polymer RAM (PoRAM), a magnetic RAM (MRAM), a ferroelectric RAM (FeRAM), or flash memory cells.

The sense amplifier block 20 may include a plurality of sense amplifiers SA. Each of the plurality of sense amplifiers SA may be connected to a bit line BL connected to one of the cell bit lines BLC and a complementary bit line BLB corresponding to the bit line BL. have. Here, the plurality of sense amplifiers SA may be an open bit line sense amplifier, a folded bit line sense amplifier, an alternate sense amplifier, or a rotated sense amplifier. In the present embodiment, the sense amplifier block 20 may be disposed above or below the memory cell array 10 so as to planarly overlap the memory cell array 10.

The output unit 30 may include a plurality of output elements OE, and the plurality of output elements OE may be connected to each of the plurality of cell bit lines BLC. In this case, each of the plurality of output elements OE may transmit a signal of the corresponding bit line BL to the output line. In the present embodiment, the output unit 30 may be disposed on the side of the memory cell array 10 or the sense amplifier block 20 so as not to overlap the memory cell array 10 and the sense amplifier block 20 in plan view. .

FIG. 2 is a circuit diagram schematically illustrating an example of a sense amplifier included in the semiconductor memory device of FIG. 1.

Referring to FIG. 2, the sense amplifier 20A may include an equalizing unit 21, a pressure reducing unit 22, a boosting unit 23, and a loading capacitor 24, according to the present embodiment. The amplifier 20A may be used in a semiconductor memory device including volatile memory cells.

Here, the equalizer 21, the decompression unit 22, and the booster 23 may be connected to the bit line BL and the complementary bit line BLB, and the loading capacitor 24 may be connected to the complementary bit line BLB. Can be. In the present exemplary embodiment, the sense amplifier 20A may be disposed above or below the cell bit line BLC to planarly overlap the memory cell array 10 including the plurality of memory cells MC.

In the present embodiment, the cell bit line BLC may extend along the first direction, and the bit line BL and the complementary bit line BLB may extend parallel to each other along a second direction perpendicular to the first direction. have. In addition, the equalizing unit 21, the pressure reducing unit 22, the boosting unit 23, and the loading capacitor 24 included in the sense amplifier 20A may be disposed adjacent to each other in the second direction.

The equalizer 21 may equalize the voltages of the bit line BL and the complementary bit line BLB based on the equalization signal EQ, and may include first to third NMOS transistors NM1, NM2, and NM3. ) May be included. The first NMOS transistor NM1 may have a source and a drain connected to the bit line BL and the complementary bit line BLB, and a gate to which the equalization signal EQ is applied. The second NMOS transistor NM2 may be a drain connected to the bit line BL, a gate connected to a source voltage (eg, VCC / 2) terminal having a predetermined level, and a gate to which the equalization signal EQ is applied. Can have The third NMOS transistor NM3 is connected in series with the second NMOS transistor NM2, and is connected to a power supply voltage (eg, VCC / 2) terminal having a predetermined level, and the drain and complementary bit line BLB ) And a gate to which the equalization signal EQ is applied.

The decompression unit 22 may depressurize a signal having a low voltage level among the signal of the bit line BL and the signal of the complementary bit line BLB, and include fourth and fifth NMOS transistors NM4 and NM5. can do. For example, the decompression unit 22 may decompress a signal having a low voltage level between the signal of the bit line BL and the signal of the complementary bit line BLB to 0V. The fourth NMOS transistor NM4 may have a drain connected to the bit line BL, a source connected to the decompression signal LAB terminal, and a gate connected to the complementary bit line BLB. The fifth NMOS transistor NM5 may have a source connected to the decompression signal LAB terminal, a drain connected to the complementary bit line BLB, and a gate connected to the bit line BL.

The booster 23 may boost a signal having a high voltage level among the signal of the bit line BL and the signal of the complementary bit line BLB, and include the first and second PMOS transistors PM1 and PM2. can do. For example, the booster 23 may boost a signal having a high voltage level among the signal of the bit line BL and the signal of the complementary bit line BLB to VCC. The first PMOS transistor PM1 may have a drain connected to the bit line BL, a source connected to the boost signal LA terminal, and a gate connected to the complementary bit line BLB. The second PMOS transistor PM2 may have a source connected to the boost signal LA terminal, a drain connected to the complementary bit line BLB, and a gate connected to the bit line BL.

The loading capacitor 24 may be connected to the complementary bit line BLB, and in one embodiment, may be implemented as a MOS capacitor. For example, the loading capacitor 40 may be implemented as a MOS capacitor formed in the P well. As such, the sense amplifier 20A includes a loading capacitor 24 to restore the voltage of the complementary bit line BLB to a reference voltage (eg, VCC / 2) for the operation of the sense amplifier 20A. Can be.

An output element OE may be disposed on the side of the sense amplifier 20A. In this case, the output unit 30 receives the signal of the bit line BL sensed by the sense amplifier 20A. Can be delivered to. Specifically, the output element OE includes a column select transistor NM6 having a drain connected to the bit line BL, a source connected to the input / output line IO, and a gate to which the column select signal CS is applied. It may include.

3 is a circuit diagram schematically illustrating a modified embodiment of the sense amplifier of FIG. 2.

Referring to FIG. 3, the sense amplifier 20A ′ may include an equalizer 21, a pressure reducing unit 22, a boosting unit 23, a loading capacitor 24, and a precharge unit 25. Compared to the sense amplifier 20A shown in FIG. 2, the sense amplifier 20A ′ according to the present embodiment may further include a precharge unit 25. Accordingly, the sense amplifier 20A 'according to the present embodiment may be used in a semiconductor memory device including nonvolatile memory cells.

The precharge unit 25 may precharge the voltage of the bit line BL to a precharge voltage. In detail, the precharge unit 25 includes a precharge transistor having a source connected to the bit line BL, a drain connected to the precharge voltage terminal V _PPSA , and a gate to which the precharge enable signal PRE is applied. It may be implemented as (NM7). When the precharge enable signal PRE is activated, the precharge transistor NM7 is turned on, and accordingly, the bit line BL may be precharged with the precharge voltage.

4 is a block diagram schematically illustrating the sense amplifier of FIGS. 2 and 3.

Referring to FIG. 4, the connection relationship between the sense amplifiers 20A and 20A ', the output element OE, and the cell bit line BLC is simply illustrated as' ○'. For convenience, hereinafter, illustration of the bit line BL and the complementary bit line BLB will be omitted. For convenience, hereinafter, the illustration of the input / output line IO will be omitted.

FIG. 5 schematically illustrates an example of an arrangement relationship of a plurality of cell bit lines and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4.

Referring to FIG. 5, the plurality of sense amplifiers SA0, SA1, SA2, and SA3 may be disposed above or below the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3. Specifically, the first sense amplifier SA0 is connected to the first cell bit line BLC0, the second sense amplifier SA1 is connected to the second cell bit line BLC1, and the third sense amplifier SA2. May be connected to the third cell bit line BLC2, and the fourth sense amplifier SA3 may be connected to the fourth cell bit line BLC3.

The plurality of output elements OE0, OE1, OE2, and OE3 may be connected to the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, respectively. In detail, the first output element OE0 is connected to the first cell bit line BLC0, the second output element OE1 is connected to the second cell bit line BLC1, and the third output element OE2. May be connected to the third cell bit line BLC2, and the fourth output element OE3 may be connected to the fourth cell bit line BLC3.

6 illustrates a semiconductor memory device having the arrangement relationship of FIG. 5.

Referring to FIG. 6, the semiconductor memory device 1A includes a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. ) May include a plurality of memory cells MC respectively disposed in an area where () cross each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be DRAM cells including a cell transistor CT and a cell capacitor CC.

FIG. 7 schematically illustrates another example of an arrangement relationship of a plurality of cell bit lines, a plurality of sense amplifier control lines, and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4.

Referring to FIG. 7, the plurality of sense amplifiers SA0, SA1, SA2, and SA3 may be formed on or above the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and the plurality of sense amplifier control lines SA_CL. It may be disposed at the bottom. Here, the plurality of sense amplifier control lines SA_CL may include the equalization signal EQ, the decompression signal LAB, the boost signal LA, and the power supply voltage (eg, VCC / 2) shown in FIGS. 2 and 3. Each can be provided. In addition, the plurality of sense amplifier control lines SA_CL may provide a P well voltage and an N well voltage, respectively. However, the number of the plurality of sense amplifier control lines SA_CL is just an example, and in another embodiment, the number of the plurality of sense amplifier control lines SA_CL may be variously changed.

According to the present exemplary embodiment, some of the plurality of cell bit lines may be used as the plurality of sense amplifier control lines without providing additional wiring for providing a plurality of control signals required for driving the sense amplifier SA. The wiring process can be simplified.

In detail, the first sense amplifier SA0 is connected to the first cell bit line BLC0 and the plurality of sense amplifier control lines SA_CL, and the second sense amplifier SA1 is connected to the second cell bit line BLC1. And a plurality of sense amplifier control lines SA_CL, and a third sense amplifier SA2 is connected to a third cell bit line BLC2 and a plurality of sense amplifier control lines SA_CL, and a fourth sense amplifier. SA3 may be connected to the fourth cell bit line BLC3 and the plurality of sense amplifier control lines SA_CL.

The plurality of output elements OE0, OE1, OE2, and OE3 may be connected to the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, respectively. In detail, the first output element OE0 is connected to the first cell bit line BLC0, the second output element OE1 is connected to the second cell bit line BLC1, and the third output element OE2. May be connected to the third cell bit line BLC2, and the fourth output element OE3 may be connected to the fourth cell bit line BLC3.

FIG. 8 illustrates a semiconductor memory device having the arrangement relationship of FIG. 7.

Referring to FIG. 8, the semiconductor memory device 1B includes a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. ) May include a plurality of memory cells MC disposed in regions where the cross-sections cross each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be DRAM cells including a cell transistor CT and a cell capacitor CC.

In addition, the semiconductor memory device 1B is disposed in regions where the plurality of sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. The plurality of additional memory cells MC ′ may be included. Therefore, the memory cell array 10 may further include a plurality of additional memory cells MC ′. In this case, the plurality of additional memory cells MC ′ may also be DRAM cells including the cell transistor CT and the cell capacitor CC.

9 illustrates a modified embodiment of FIG. 8.

Referring to FIG. 9, the semiconductor memory device 1B ′ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and the like. The plurality of memory cells MC may be disposed in regions where WL7 crosses each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be DRAM cells including a cell transistor CT and a cell capacitor CC.

According to the present exemplary embodiment, in the semiconductor memory device 1B ', a plurality of sense amplifier control lines SA_CL and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. The plurality of additional memory cells MC ′ disposed in the regions may not be included. In detail, the semiconductor memory device 1B 'may include the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. At least one or more of the excluded cell elements may be removed. For example, the cell capacitor CC disposed in regions where the plurality of sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. ) May be removed or the channel region may be electrically separated from the cell transistor CT. As a result, electrical fatigue of the semiconductor memory device 1B 'can be reduced, and malfunction of the sense amplifier SA can be prevented.

10 is a diagram illustrating an arrangement relationship of a plurality of cell bit lines, a plurality of first sense amplifier control lines, a plurality of second sense amplifier control lines, and a plurality of sense amplifiers in the semiconductor memory device including the sense amplifier of FIG. 4. Another example is shown schematically.

Referring to FIG. 10, the plurality of sense amplifiers SA0, SA1, SA2, and SA3 may include the cell bit lines BLC0, BLC1, BLC2, and BLC3 and the plurality of first sense amplifier control lines SA_CL1. It may be disposed above or below. Here, the plurality of first sense amplifier control lines SA_CL1 may include the equalization signal EQ, the decompression signal LAB, the boost signal LA, and the power supply voltage (eg, VCC / 2) may be provided respectively. In addition, the plurality of first sense amplifier control lines SA_CL1 may provide a P well voltage and an N well voltage, respectively. However, the number of such first plurality of sense amplifier control lines SA_CL1 is only one example, and in another embodiment, the number of first plurality of sense amplifier control lines SA_CL1 may be variously changed. .

In detail, the first sense amplifier SA0 is connected to the first cell bit line BLC0 and the plurality of first sense amplifier control lines SA_CL1, and the second sense amplifier SA1 is connected to the second cell bit line BLC1) and a plurality of first sense amplifier control lines SA_CL1, and a third sense amplifier SA2 is connected to a third cell bit line BLC2 and a plurality of first sense amplifier control lines SA_CL1. The fourth sense amplifier SA3 may be connected to the fourth cell bit line BLC3 and the plurality of first sense amplifier control lines SA_CL1.

The plurality of second sense amplifier control lines SA_CL2 may be disposed in parallel with the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. In addition, the plurality of second sense amplifier control lines SA_CL2 may be connected to the plurality of first sense amplifier control lines SA_CL1, respectively.

The plurality of output elements OE0, OE1, OE2, and OE3 may be connected to the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, respectively. In detail, the first output element OE0 is connected to the first cell bit line BLC0, the second output element OE1 is connected to the second cell bit line BLC1, and the third output element OE2. May be connected to the third cell bit line BLC2, and the fourth output element OE3 may be connected to the fourth cell bit line BLC3.

11 illustrates a semiconductor memory device having the arrangement relationship of FIG. 10.

Referring to FIG. 11, the semiconductor memory device 1C includes a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. ) May include a plurality of memory cells MC disposed in regions where the cross-sections cross each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be DRAM cells including a cell transistor CT and a cell capacitor CC.

In addition, the semiconductor memory device 1C may be in regions where the plurality of first sense amplifier control lines SA_CL1 and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. Each of the plurality of additional memory cells MC ′ may be disposed. Therefore, the memory cell array 10 may further include a plurality of additional memory cells MC ′. In this case, the plurality of additional memory cells MC ′ may also be DRAM cells including the cell transistor CT and the cell capacitor CC.

FIG. 12 shows a first modified embodiment of FIG. 11.

Referring to FIG. 12, the semiconductor memory device 1C ′ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and the like. The plurality of memory cells MC may be disposed in regions where WL7 crosses each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be DRAM cells including a cell transistor CT and a cell capacitor CC.

According to the present exemplary embodiment, the semiconductor memory device 1C ′ crosses a plurality of sense amplifier control lines SA_CL and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. The plurality of additional memory cells MC ′ disposed in the regions may not be included. In detail, the semiconductor memory device 1C ′ may connect the plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. At least one or more of the excluded cell elements may be removed. For example, the cell capacitor CC disposed in regions where the plurality of sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. ) May be removed or the channel region may be electrically separated from the cell transistor CT. As a result, electrical fatigue of the semiconductor memory device 1C 'can be reduced, and malfunction of the sense amplifier SA can be prevented.

FIG. 13 shows a second modified embodiment of FIG. 11.

Referring to FIG. 13, a semiconductor memory device 1C ″ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and the like. A plurality of memory cells MC may be disposed in regions where the WL7 crosses each other, such a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, and a plurality of word lines WL0 and WL1. , WL2, WL3, WL4, WL5, WL6, and WL7 and the plurality of memory cells MC may constitute a memory cell array 10. In this case, the plurality of memory cells MC may include a variable resistor R and a plurality of memory cells MC. The memory cells may be resistive memory cells such as a PRAM or an RRAM including the selection transistor ST.

In this case, the semiconductor memory device 1C ″ includes regions where the plurality of first sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. The semiconductor memory device 1C ″ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of words. At least one or more of the cell elements except for the lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 may be removed. For example, the variable resistor R disposed in regions where the plurality of sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. ) May be removed or the channel region may be electrically separated from the selection transistor ST. As a result, electrical fatigue of the semiconductor memory device 1C ″ can be reduced, and malfunction of the sense amplifier SA can be prevented.

FIG. 14 shows a third modified embodiment of FIG. 11.

Referring to FIG. 14, the semiconductor memory device 1C ′ ″ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, The plurality of memory cells MC may be disposed in regions where WL6 and WL7 cross each other. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, WL7, and the plurality of memory cells MC are memory cells. The array 10 can be configured. In this case, the plurality of memory cells MC may be resistive memory cells such as a PRAM or an RRAM including a variable resistor R and a selection diode SD.

In the semiconductor memory device 1C ′ ″, the plurality of first sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. The plurality of additional memory cells MC ′ disposed in the regions may not be included. In detail, the semiconductor memory device 1C ′ ″ may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 and a plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7. At least one of the cell elements except for () may be removed. For example, the variable resistor R disposed in regions where the plurality of sense amplifier control lines SA_CL and the plurality of word lines WL0, WL1, WL2, WL3, WL4, WL5, WL6, and WL7 cross each other. ) May be removed or the select diode SD may be electrically disconnected. As a result, electrical fatigue of the semiconductor memory device 1C '' 'can be reduced, and malfunction of the sense amplifier SA can be prevented.

15 is a schematic diagram illustrating a memory card according to an embodiment of the present invention.

Referring to FIG. 15, the memory card 1000 includes a controller 1100 and a memory 1200 in a housing 1300, and the controller 1100 and the memory 1200 may be arranged to exchange electrical signals. . For example, when the controller 1100 issues a command, the memory 1200 may transmit data. The memory 1200 may include a semiconductor memory device among the above-described embodiments of the present invention.

The memory card 1000 may include various types of cards, for example, a memory stick card, a smart media card (SM), a secure digital (SD), and a mini secure digital card ( It can be used in a memory device such as a mini secure digital card (mini SD), or a multi media card (MMC).

16 is a block diagram schematically illustrating an electronic system according to an embodiment of the present invention.

Referring to FIG. 16, the electronic system 2000 may include a processor 2100, a memory 2200, an input / output device 2300, and an interface 2400. The electronic system 2000 may be a mobile system or a system for transmitting or receiving information. The mobile system may be a PDA, a portable computer, a web tablet, a wireless phone, a mobile phone, a digital music player, or a memory card .

The processor 2100 may execute a program and control the electronic system 2000. Here, the processor 2100 may be, for example, a microprocessor, a digital signal processor, a microcontroller, or a similar device.

The input / output device 2300 may be used to input or output data of the electronic system 2000. The electronic system 2000 may be connected to an external device, such as a personal computer or a network, by using the input / output device 2300 to exchange data with the external device. Here, the input / output device 2300 may be, for example, a keypad, a keyboard, or a display.

The memory 2200 may store code and / or data for operating the processor 2100, and / or may store data processed by the processor 2100. Here, the memory 2200 may include a semiconductor memory device according to any one of the above-described embodiments of the present invention.

The interface 2400 may be a data transmission path between the electronic system 2000 and another external device. The processor 2100, the memory 2300, the input / output device 2300, and the interface 2400 may communicate with each other through the bus 2500.

For example, the electronic system 2000 may be a mobile phone, an MP3 player, navigation, a portable multimedia player (PMP), a solid state drive (SSD), or a household appliance. appliances).

FIG. 17 is a circuit diagram schematically illustrating a semiconductor memory device according to example embodiments. FIG. 18 is a plan view illustrating a portion P of the semiconductor memory device of FIG. 17. FIG. 18 is a plan view superimposing several process layers, and detailed layer configurations and processes will be described later with reference to FIGS. 41 to 48.

Referring to FIGS. 17 and 18, a semiconductor memory device may include a plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3 respectively disposed in regions where a plurality of word lines WL0 to WL15 cross each other. It may include memory cells MC. The plurality of cell bit lines BLC0, BLC1, BLC2, and BLC3, the plurality of word lines WL0 to WL15, and the plurality of memory cells MC constitute a memory cell array, and the memory cell array includes a memory cell. May be disposed in an area MCR. Here, the plurality of memory cells MC is simply illustrated as '●', the plurality of memory cells MC may be volatile memory cells such as DRAM, resistive memory cells such as PRAM, RRAM, NFGM, It may be PoRAM, MRAM, FeRAM or flash memory cells.

In addition, the semiconductor memory device is referred to as a plurality of sense amplifier control lines (eg, [EQ], [VCC / 2], [Pwell], [LAB], [LA], [Nwell], hereinafter referred to as 'SA_CL')). ) And dummy cells DC disposed in regions where the plurality of word lines WL0 to WL15 cross each other. The plurality of sense amplifier control lines SA_CL, the plurality of word lines WL0 to WL15, and the plurality of dummy cells DC constitute a dummy cell array, and the dummy cell array is in the dummy cell region DCR. Can be arranged. Here, the plurality of dummy cells DC is simply illustrated as 'X', and the plurality of dummy cells DC may be embodied in the same manner as the memory cells MC as shown in the embodiments of FIGS. 17 to 21. It may be implemented differently from the memory cells MC. A case in which the plurality of dummy cells DC is implemented differently from the memory cells MC will be described later with reference to FIGS. 22 to 30.

FIG. 19 is a cross-sectional view taken along line X19-X19 'of FIG. 18 and illustrates a memory cell array formed in a memory cell region.

17, 18, and 19, shallow trench isolation (STI), p-type well region 101, n-type lightly doped drain (LDD) 105, and n-type source / drain At least one memory cell MC and at least one sense amplifier SA are formed on the substrate 100 on which the 107 is formed.

The memory cells MC may be disposed on the first layer on the substrate 100, and may overlap with the sense amplifier SA in plan view. Each of the memory cells MC may include a switching device SW and a storage device 300.

The switching element SW may extend vertically on the cell bit line BLC and may be controlled by the word line WL. More specifically, the switching device SW may include a first source / drain 202 connected to the cell bit line BLC, a second source / drain 280 connected to the storage element 300, and a first source / drain ( It may be implemented as a vertical channel transistor including a channel active layer 212 positioned between 202 and the second source / drain 280. In this case, the word line WL may surround the channel active layer 212 of the vertical channel type transistor, and the gate dielectric layer 250 is interposed between the word line WL and the channel active layer 212.

Although the vertical channel type transistors illustrated in FIGS. 17 and 18 illustrate an embodiment in which a first source / drain connected to a cell bit line is located below and a second source / drain connected to a storage element is located above, Note that the technical idea of the present invention is not limited thereto. For example, a first source / drain connected to the cell bit line may be located at the top, and a second source / drain connected to the storage element may be located at the bottom.

The storage device 300 may be electrically connected to the switching device SW to store or output data as the switching device SW is turned on / off. For example, the storage element 300 may be implemented as a capacitor. However, the present invention is not limited thereto. For example, as illustrated in FIG. 32, the storage device 300 may include a phase change layer or perovskite or transition metal oxide including a chalcogenide material. Note that the same resistance variation layer may be included.

The sense amplifiers SA (SA0 to SA3 of FIG. 17) may be disposed on a second layer different from the first layer. In order to sense the data stored in the memory cell, the sense amplifier SA includes an equalizer (21 in FIG. 2), a pressure reducing unit (22 in FIG. 2), a booster (23 in FIG. 2), and a loading capacitor (24 in FIG. 2). ) May be included as described above. The equalizer, the decompression unit, and the booster transistors may be implemented with an n-type source / drain 107, a gate dielectric layer 120, and a gate conductor 130.

The sense amplifier SA may be connected to the bit line BL and the complementary bit line BLB. More specifically, as described with reference to FIG. 2, the equalizer (21 in FIG. 2), the decompression unit (22 in FIG. 2), and the booster (23 in FIG. 2) may include a bit line BL and a complementary bit line BLB. ) And a loading capacitor (24 of FIG. 2) may be connected to the complementary bit line BLB.

The semiconductor memory device may further include an output device OE and a local interconnect via (LV).

The output element OE may be connected to the cell bit line BLC for input / output of data, in which case the output via OV and the contact plug for connecting the output element OE to the cell bit line BLC. (CP) can be used. The output element OE and the output via OV may be located in regions outside the memory cell region MCR and the dummy cell region DCR. As described above, the output element OE may include a column select transistor (NM6 in FIG. 2) to control input / output of data. The connected n-type source / drain 107 may be a source / drain of the column select transistor.

The local interconnect via LV connects the sense amplifier SA and the memory cell array to each other. More specifically, the local interconnect via LV extends between the cell bit line BLC and the bit line BL to connect the cell bit line BLC and the bit line BL, and thus the sense amplifier SA. And a memory cell array may be connected.

20 is a cross-sectional view taken along line X20-X20 'of FIG. 18 and illustrates a dummy cell array formed in the dummy cell region DCR.

17, 18, and 20, at least one dummy cell DC and at least one sense amplifier SA are formed on the substrate 100.

The dummy cells DC may be disposed in the first layer on the substrate 100, and may overlap with the sense amplifier SA in plan view. Each of the dummy cells MC may include a switching device SW ′ and a storage device 300.

The switching element SW ′ may extend vertically on the sense amplifier control line SA_CL and may be controlled by the word line WL. More specifically, the switching device SW ′ may include a first source / drain 202 connected to the sense amplifier control line SA_CL, a second source / drain 280 connected to the storage element 300, and a first source / drain. It may be implemented as a vertical channel transistor including a channel active layer 212 positioned between the drain 202 and the second source / drain 280. In this case, the word line WL may surround the channel active layer 212 of the vertical channel type transistor, and the gate dielectric layer 250 is interposed between the word line WL and the channel active layer 212.

The description of the storage device 300 is the same as described with reference to FIG. 19 and will be omitted below.

Description of the sense amplifiers SA (SA0 to SA3 of FIG. 17) is also the same as described with reference to FIG. 19, and the sense amplifier SA shown in FIG. 20 illustrates another cross section of the sense amplifiers (SA0 to SA3 of FIG. 17). . More specifically, the sense amplifier SA formed in the second layer along the X20-X20 'cross section of FIG. 18 includes n-type lightly doped drain 105, n-type source / drain 107, and signal vias. Contact plugs CP1 and CP2 connected between the SVs SV1 and SV2 and the n-type source / drain 107. Here, the n-type source / drain 107 may correspond to the source / drain of the transistor for implementing the equalizing part (21 in FIG. 2), the pressure reducing part (22 in FIG. 2), and the boosting part (23 in FIG. 2). Can be.

The semiconductor memory device may further include an input via IV and a signal via SV.

The input via IV receives a signal for driving the sense amplifier SA (for example, an EQ, VCC / 2, Pwell, LAB, LA, and Nwell signal) and transmits the signal to the sense amplifier control line SA_CL. have. For example, in FIG. 20, the input via IV may receive a VCC / 2 signal and transmit the VCC / 2 signal to the sense amplifier control line SA_CL. The VCC / 2 signal transmitted to the sense amplifier control line SA_CL may be transmitted to the n-type source / drain 107 through signal vias SV1 and SV2. The input via IV may be located in an area outside the memory cell area MCR and the dummy cell area DCR.

The signal vias SV1 and SV2 may connect the sense amplifier SA and the dummy cell array to each other. More specifically, the signal vias SV1 and SV2 may extend toward the sense amplifiers (see SA0 to SA3 in FIG. 17) in a direction perpendicular to the direction in which the sense amplifier control lines SA_CL extend, and thus the sense amplifiers. The SA and the dummy cell array may be connected to each other.

FIG. 21 is a cross-sectional view taken along line Y21-Y21 'of FIG. 18 and illustrates a cross-sectional view of a semiconductor memory device showing both a memory cell region MCR and a dummy cell region DCR.

Since the components of FIG. 21 have been described with reference to FIGS. 19 and 21, a detailed description thereof will be omitted. Note that the local interconnect via LV is disposed in the memory cell region MCR, and the signal via SV is disposed in the dummy cell region DCR.

The local interconnect via LV of the memory cell region MCR connects between the cell bit line BLC and the bit line BL. Therefore, the cell bit line BLC is connected to the gate conductor 130 through the bit line BL. 2 may correspond to the cell bit line BLC connected to the gate of the fifth NMOS transistor NM5 through the bit line BL.

The signal via SV of the dummy cell region DCR includes a sense amplifier control line SA_CL to which an N-well voltage is applied, and an n-type LDD 105 and an n-type source / drain 107 therein. Are formed between the N wells 102 formed therein. This may correspond to a state in which the N well voltage is applied to N wells (not shown) of the PMOS transistors PM1 and PM2 in FIG. 2.

FIG. 22 is a plan view illustrating a portion of the semiconductor memory device of FIG. 17 implemented according to some embodiments of the present inventive concept. FIG. 23 is a cross-sectional view taken along line X23-X23 'of FIG. 22, FIG. 24 is a cross-sectional view taken along line X24-X24' of FIG. 22, and FIG. 25 is a cross-sectional view taken along line Y25-Y25 'of FIG. The semiconductor memory device according to these embodiments may be modified examples of the embodiment of FIGS. 18 to 21, and FIGS. 22 to 25 may correspond to FIGS. 18 to 21, respectively. Hereinafter, a detailed description of the embodiments will be omitted.

22 to 25, in contrast to the switching element SW included in the memory cell MC, the switching element SW ′ included in the dummy cell DC may be floated. As an example, as shown in FIG. 24, the dummy cell DC may not include a storage element. For this purpose, the storage element 300 (in FIG. 20) connected to the switching element SW ′ may be removed. In this case, the second source / drain 280 of the switching device SW ′ is directly connected to an insulating layer such as the etch stop layer 290, and as a result, the switching device SW ′ may be floated.

This appearance is more specifically shown in FIGS. 22 and 25. That is, in the memory cell region MCR, a storage element 300 such as a capacitor is formed on the switching element SW. On the other hand, in the dummy cell region DCR, no storage element is formed on the switching element SW '.

FIG. 26 is a plan view illustrating a portion of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept. FIG. FIG. 27 is a cross-sectional view taken along line X27-X27 'of FIG. 26, FIG. 28 is a cross-sectional view taken along X28-X28' of FIG. 26, and FIG. 29 is a cross-sectional view taken along Y29-Y29 'of FIG. The semiconductor memory device according to these embodiments may be modified as the embodiment of FIGS. 18 to 21, and FIGS. 26 to 29 may correspond to FIGS. 18 to 21, respectively. Hereinafter, a detailed description of the embodiments will be omitted.

26 to 29, in contrast to the switching element SW included in the memory cell MC, the switching element SW ′ included in the dummy cell DC may be in an inoperable state. have. As an example, a first source / drain connected to a switching amplifier SW of a memory cell MC, a second source / drain connected to a storage element, and the first source / drain and the second source / drain connected to a storage device. In the case of a vertical channel type transistor composed of a channel active layer disposed between the switching elements SW ′ of the dummy cell DC, at least one of the first source / drain, the second source / drain, and the channel active layer is provided. One may be a structure removed.

This appearance is more specifically shown in FIGS. 28 and 29. For example, the switching element SW ′ formed in the dummy cell region DCR may include a structure in which the second source / drain and the channel active layer are removed and only the first source / drain 202 remains. To this end, an additional etching process for the dummy cell region DCR may be performed, and the second source / drain and channel active layer of the vertical channel transistor formed in the dummy cell region DCR may be formed through the etching process. By removing, the structure of the switching element SW 'can be formed.

Although FIGS. 28 and 29 are shown as an example of the switching element SW 'in which a structure in which some components (eg, the first source / drain, the channel active layer, and the second source / drain) are removed is inoperable. Note that the present invention is not limited thereto. For example, in order to implement an inoperable switching element SW ', at least two components of the first source / drain, the channel active layer, and the second source / drain of the switching element are not electrically connected to each other. It may be open.

30 to 37 are top plan views illustrating portions of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept. More specifically, the embodiment shown in FIGS. 30 to 37 is an embodiment in which the storage element 300 'includes a phase change layer and a common ground plate (not shown) (ie, the semiconductor memory device is implemented as a PRAM instead of a DRAM). Embodiment), which is the same as the embodiment of FIGS. 22-29 except that the storage element 300 'includes a phase change layer. Therefore, overlapping description between the embodiments will be omitted.

30 to 33 illustrate embodiments in which a storage device 300 ′ having a phase change layer is formed only in a memory cell region MCR, and the storage element is not formed in a dummy cell region DCR. 22 to 25.

34 through 37 illustrate that the storage device 300 ′ implemented as a phase shift layer is formed in both the memory cell region MCR and the dummy cell region DCR, and the switching element SW ′ is formed in the dummy cell region DCR. As an exemplary embodiment, some components of) may be removed and may correspond to FIGS. 26 to 29.

Although the embodiments shown in FIGS. 30 to 37 have been described based on the case where the resistive element is a phase change layer, the present invention is not limited thereto. For example, the resistive element may be formed of perovskite or transition metal oxide. Note that the same resistance side may be implemented in layers.

38 to 40 are top plan views illustrating portions of the semiconductor memory device of FIG. 17 implemented according to other embodiments of the inventive concept. 38 to 40 show an embodiment in which the switching element is composed of a diode. In addition, FIGS. 38 to 40 illustrate that a storage element implemented as a phase change layer is formed in both the memory cell region MCR and the dummy cell region DCR, and the switching element formed in the dummy cell region DCR is an insulating layer 249. It shows an embodiment consisting of.

38 to 40, the switching element SW formed in the memory cell region MCR may be formed of a diode including a p-type layer 243 and an n-type layer 245. The switching element SW may be connected between the word line WL and the cell bit line BLC. More specifically, the storage element 300 'is connected between the switching element SW and the cell bit line BLC. For example, the p-type layer 243 of the diode is connected to the storage element 300'. The n-type layer 245 may be connected to the word line WL.

Although the p-type layer is connected to the storage element and the n-type layer is connected to the word line in the case of the diode illustrated in FIG. 38, it is noted that the technical idea of the present invention is not limited thereto. For example, the storage element may be connected between the n-type layer 245 and the word line WL. In this case the p-type layer of the diode will be connected with the cell bit line and the n-type layer will be connected with the storage element.

In contrast to the switching element SW included in the memory cell MC, the switching element SW ′ included in the dummy cell DC has a structure in which at least one of the p-type layer and the n-type layer is removed. Can be. This appearance is more specifically shown in FIGS. 39 and 40. For example, the switching element SW ′ formed in the dummy cell region DCR may include a structure in which both the p-type layer and the n-type layer are removed. To this end, an additional etching process for the dummy cell region (DCR) may be performed before the formation of the word line, and the structure including only the insulating layer 249 by removing the p-type layer and the n-type layer through the etching process. The switching element SW 'of may be formed.

A specific process for forming the switching element SW 'having a structure composed of only the insulating layer 249 will be described. First, the storage element 300 ′, the p-type layer, and the n-type layer are formed on the third interlayer insulating layer 241. Thereafter, an interlayer insulating layer 248 is formed, and the p-type layer and the n-type layer are removed through an etching process. As a result of the removal of the p-type layer and the n-type layer, the interlayer insulating layer 248 includes a recess, and an insulating layer 249 is formed to fill the recess. As a result, the p-type layer and the n-type layer may be removed to form a switching device SW ′ having a structure composed of only the insulating layer 249.

41 to 48 are cross-sectional views and plan views schematically illustrating a method of manufacturing a semiconductor memory device in accordance with exemplary embodiments of the present invention, according to a process sequence. The semiconductor memory device manufactured by the method according to these embodiments may correspond to the semiconductor memory device shown in FIGS. 18 and 19.

41 and 42 (sectional views along X42-X42 'in FIG. 41), p-type well region 101 and n-type well region 102 are formed in substrate 100 and p- A shallow trench isolation (STI) 110 is formed in the type well region 101 and the n-type well region 102. Thereafter, the gate dielectric layer 120, the gate conductor 130, the gate hard mask 131, and the gate spacer 132 are sequentially formed to form gate structures of transistors used as sense amplifiers. An ion doping process may be performed during the formation of the gate structure, thereby forming n-type lightly doped drain (LDD) 105 and n-type source / drain 107 in the p-type well region 101. P-type LDD (106 in FIG. 21) and p-type source / drain 108 (108 in FIG. 21) may be formed in n-type well region 102.

43 and 44 (sectional view taken along line X44-X44 'of FIG. 43), a first interlayer insulating layer 140 is formed on the gate structure, and a conductive layer is formed on the first interlayer insulating layer 140. 160 and a mask layer 161 are formed. The conductive layer 130 may perform functions such as a bit line BL and a complementary bit line BLB of the sense amplifier. The contact plug CP may be formed before the conductive layer 160 and the mask layer 161 are formed.

Referring to FIGS. 45 and 46 (sectional views taken along line X46-X46 ′ in FIG. 45), a second interlayer insulating layer 170 is formed on the conductive layer 160 and the mask layer 161. Thereafter, a portion of the second interlayer insulating layer 170 is removed and a conductive material is deposited to form local interconnect vias LV, output vias OV, input vias IV, and signal vias SV1 and SV2. Afterwards, the cell bit line BLC and the sense amplifier control line SA_CL are formed. In order to form the cell bit line BLC and the sense amplifier control line SA_CL, the n-type polysilicon layer 201 and the second silicon substrate may be formed on the cell bit line BLC and the sense amplifier control line SA_CL. 211), and the hard mask 221 may be sequentially formed, and a patterning process may be performed thereon.

Referring to FIGS. 47 and 48 (sectional views taken along line X48-X48 ′ of FIG. 47), after the third interlayer insulating layer 231 is formed, switching elements (ie, switching elements) are formed in the memory cell region MCR and the dummy cell region DCR. SW, SW 'of FIG. 20). In order to form the switching elements, an n-type polysilicon layer (201 of FIG. 45) and a second silicon substrate (211 of FIG. 45) are patterned, and a fourth interlayer insulating layer 241 is formed, and then a gate dielectric layer 250 is formed. ) And a word line conductor 260 may be formed. Subsequently, the fifth interlayer insulating layer 270 and the etch stop layer 290 are sequentially formed, and the storage element 300 is formed at a portion where the etch stop layer 290 is patterned.

It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit or scope of the invention. Will be clear to those who have knowledge of.

100: substrate
110: shallow trench isolation
101: p-type well region
102: n-type well region
105: n-type Lightly Doped Drain:
106: p-type LDD
107: n-type source / drain
108: p-type source / drain
120: gate dielectric film
130: gate conductor
131: gate hard mask
132: gate spacer
140: first interlayer insulating film
160: conductive layer
161: mask layer
170: second interlayer insulating layer
201: n-type polysilicon layer
202: first source / drain
211: second silicon substrate
212 channel active layer
221: hard mask
231: third interlayer insulating film
241: fourth interlayer insulating film
243 p-type layer
245: n-type layer
248: interlayer insulating film
249: insulation layer
250: gate dielectric layer
270: fifth interlayer insulating film
280: second source / drain
290: etch stop
300, 300 ': storage element

Claims (18)

A memory cell array disposed in a first layer of a first region, comprising: a memory cell array including at least one memory cell disposed in an area where at least one word line and at least one cell bit line cross each other;
A sense amplifier disposed on a second layer different from the first layer, the sense amplifier being connected to at least one bit line connected to the at least one cell bit line and at least one complementary bit line corresponding to the at least one bit line At least one sense amplifier configured to sense data stored in the at least one memory cell;
A local interconnect via disposed in the first region, the local interconnect via connecting between the cell bit line and the bit line;
At least one output element coupled to the cell bit line and configured to output the data; And
And an output via connecting the cell bit line and the output element. The method of claim 1,
The at least one sense amplifier overlaps planarly with the memory cell array,
And the local interconnect via extends between the cell bit line and the bit line. The method of claim 1,
The at least one memory cell included in the memory cell array,
A switching element extending vertically on said cell bit line and controlled by said at least one word line; And
And a storage device electrically connected to the switching device. The method of claim 3,
The switching element is a vertical channel type including a first doped region connected to the cell bit line, a second doped region connected to the storage element, and a channel active layer positioned between the first doped region and the second doped region. A semiconductor memory device, characterized in that the transistor. The method of claim 3,
The storage device may include a capacitor, a phase change layer, or a resistance change layer. The method of claim 3,
The switching element is a diode comprising a p-type layer and an n-type layer,
And the storage element includes a phase change layer or a resistance change layer, and is disposed between the diode and the cell bit line or between the diode and the word line. The method of claim 1,
And at least one output device connected to the at least one cell bit line. The method of claim 7, wherein
An output via extending between said cell bit line and said output element,
And the output via is disposed in an area different from the first area. The method of claim 1,
A dummy cell array disposed in the first layer of the second region different from the first region, and including at least one dummy cell disposed in a region where the at least one word line and the at least one sense amplifier control line cross each other; ; And
And a signal via disposed in the second region, the signal via connecting the sense amplifier control line and the sense amplifier. 10. The method of claim 9,
And the cell bit line and the sense amplifier control line extend in the same direction. 10. The method of claim 9,
The at least one dummy cell,
A switching element extending vertically on said sense amplifier control line and controlled by said at least one word line,
And the switching element is electrically floating. 12. The method of claim 11,
The switching element includes a vertical doped region including a first doped region connected to the sense amplifier control line, a second doped region directly connected to an insulating layer, and a channel active layer positioned between the first doped region and the second doped region. A semiconductor memory device, characterized in that the channel transistor. 10. The method of claim 9,
The at least one dummy cell,
A switching element extending vertically on said sense amplifier control line and controlled by said at least one word line,
And the switching element is in an inoperable state. 14. The method of claim 13,
The at least one dummy cell further comprises a storage element formed on the switching element,
The switching element may include a vertical channel including a first doped region connected to the sense amplifier control line, a second doped region connected to the storage element, and a channel active layer positioned between the first doped region and the second doped region. And at least one component of the transistors is removed. 14. The method of claim 13,
The at least one dummy cell further comprises a storage element formed on the switching element,
The switching element may include a vertical channel including a first doped region connected to the sense amplifier control line, a second doped region connected to the storage element, and a channel active layer positioned between the first doped region and the second doped region. And at least two components of the transistor type are in an open structure without being electrically connected to each other. 10. The method of claim 9,
An input via connected to the cell bit line and transferring control signals for driving a sense amplifier,
And the input via is disposed in an area different from the first area and the second area. A memory unit including the semiconductor memory device according to any one of claims 1 to 16; And
And a controller for controlling the memory unit. A memory unit including the semiconductor memory device according to any one of claims 1 to 16;
A processor communicating with the memory unit through a bus; And
And an input / output device in communication with the bus.

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