KR101341975B1 - Manufacturing method of half tone mask by using sacrifice-layer and Half tone mask and of the same - Google Patents

Abstract

The present invention relates to a method of manufacturing a halftone mask having a semi-transmissive layer formed of a Ti-based material, through the protection of the semi-transmissive layer through the lamination of a sacrificial layer and through selective etching of the semi-transmissive layer formed of a Ti-based material. It relates to a process for minimizing the influence of other layers and photoresists.

According to the present invention, a sacrificial layer is formed on top of the transflective layer formed of Ti to prevent corrosion of the transflective layer, and further, H ₂ O and H ₂ O _{2 ,} and NH ₄ OH during etching of the transflective layer. By selectively etching only the transflective layer through the mixed etching solution of, the loss of the transflective layer is prevented and the influence of the transflective layer due to the corrosion of the light shielding layer and the transparent substrate and the removal of the photosensitive material is removed. There is an effect that can produce a halftone mask that can realize an improved yield.

Translucent, sacrificial layer, selective etching

Description

Manufacturing method of half tone mask by using sacrifice-layer and Half tone mask and of the same}

The present invention relates to a method for manufacturing a halftone mask, specifically forming a sacrificial layer formed of Au- or a mixture containing Au on top of the semi-transmissive layer formed of Ti, corrosion of the semi-transmissive layer In addition, when the semi-permeable layer is etched, only the semi-permeable layer can be selectively etched through a mixed etching solution of H ₂ O, H ₂ O _{2 ,} and NH ₄ OH, thereby preventing loss of the semi-permeable layer. The present invention relates to a method of manufacturing a halftone mask capable of realizing a significantly improved yield by eliminating corrosion of a light blocking layer and a transparent substrate formed of a Cr thin film.

In particular, the etching solution of the semi-transmissive layer formed of the Ti-based material affects the photosensitive material, and furthermore, by using a unique etching solution that can block the exceptional influence factor of the photosensitive material removal solution on the semi-permeable layer, A technique for making a halftone mask is possible.

In the photomask used in the manufacture of the LCD panel, the half-tone mask has a transparent substrate 110, a light blocking part 125, a light transmitting part 121, and a semi-transmissive part 130.

The transparent substrate 110 that transmits light of a predetermined wavelength range is generally made of quartz (Qz), but may be a transparent material that can transmit light. The light blocking unit 125 and the light transmitting unit 121 are formed by patterning the semi-transparent material layer 113 and the light blocking material layer 115 stacked on the transparent substrate 110. That is, a portion of the patterned and exposed transparent substrate 110 is a light transmitting portion 121 that transmits light, and is not patterned so that the film (semi-transmissive layer 113 + light-shielding layer 115) remains. The part is a light shield 125 that blocks light. The semi-transmissive material layer 113 is formed of Cr, Si, Al, Ti, Ta, Mo as a main element, or a composite material of two or more main elements bonded together on the transparent substrate 110. On the other hand, Co ₂ , O ₂ , N ₂ may be used as the additive gas. In addition, the light blocking material film 115 may be formed by stacking a material on which the Cr and CrxOy are present on the semi-transparent material layer 113, although it is irrelevant as long as it can block the irradiated light. On the other hand, on the transparent substrate 110 of the necessary portion of the light transmitting portion 121 is formed a semi-transmissive portion 130 for transmitting only a portion of the light of a predetermined wavelength band is irradiated with a semi-transparent material made of a variety of compositions are formed.

The conventional process for manufacturing a halftone mask having the above structure is basically a patterning process using a plurality of photoresists and corresponding etching in forming the laminated structure of the transflective portion and the light shielding layer, each of the above-described components. The process will be carried out. In other words, the photoresist is coated and subjected to exposure and development for patterning, and also to sequential etching of a semi-transmissive film or a light shielding film. A Ti-based material is used as a material constituting the semi-transmissive layer, and the HF solution is generally used to etch the semi-transmissive layer formed of such a Ti-based material. In addition, there was a problem of corroding the transparent substrate (glass), and also corroded to the light shielding film, causing a lot of problems in the process selection.

In addition, when the photoresist is applied and patterned, and subsequently subjected to exposure and development, a problem occurs that the developer (liquid) affects the transflective layer formed of the above-described Ti-based thin film.

In addition, in the case of the etching liquid for etching the semi-transmissive layer (Ti-based material) after the exposure or development process, there is a case that affects the photoresist, in this case, if the photoresist is affected The problem that the material is etched further occurs, which also makes it impossible to control the desired light transmittance.

In particular, when the remaining photoresist is removed after performing a process such as patterning through the photoresist and etching of the semi-transmissive layer, the components of the removal liquid affect the semi-permeable layer made of Ti, which is also precisely light transmittance. It is difficult to control the bar, it is impossible to ensure a stable quality of the photomask.

That is, in the manufacturing process of a halftone mask having a semi-transmissive layer made of a Ti-based material, materials such as a developer, an etchant, and a photoresist removing solution affect the transflective layer, so that the desired light transmittance can be controlled. It becomes difficult and a problem arises that adversely affects the production yield.

The present invention has been made to solve the above problems, an object of the present invention is to form a sacrificial layer on top of the semi-transmissive layer formed of Ti-based, to prevent corrosion of the semi-transmissive layer, furthermore when etching the translucent layer By selectively etching only the transflective layer through a mixed etching solution of H ₂ O, H ₂ O _{2 ,} and NH ₄ OH, the loss of the transflective layer is prevented and corrosion of the light shielding layer and the transparent substrate is eliminated. It is to provide a halftone mask that can realize a significantly improved yield.

The present invention comprises the steps of forming a light shielding layer on a transparent substrate and patterning the light shielding layer by applying a photoresist; Sequentially forming a transflective layer and a sacrificial layer on the patterned light shielding layer; Patterning the sacrificial layer by applying photoresist; Selectively etching and patterning the semi-transparent layer exposed to the outside by using the patterned sacrificial layer as a protective film with an etchant mixed with H ₂ O, H ₂ O ₂ and NH ₄ OH; Removing the photoresist and the sacrificial layer on the top of the transflective layer; solves the above problems through a halftone mask manufacturing method through the selective etching of the semi-transmissive layer using a sacrificial layer.

According to the present invention, a sacrificial layer is formed on top of the transflective layer formed of Ti to prevent corrosion of the transflective layer, and further, H ₂ O and H ₂ O _{2 ,} and NH ₄ OH during etching of the transflective layer. By selectively etching only the transflective layer through the mixed etching solution of, the loss of the transflective layer is prevented and the influence of the transflective layer due to the corrosion of the light shielding layer and the transparent substrate and the removal of the photosensitive material is removed. There is an effect that can produce a halftone mask that can realize an improved yield.

The present invention provides a method for manufacturing a light shielding layer comprising: a1) forming a light shielding layer on a transparent substrate and patterning the light shielding layer by applying a photoresist;

a2) sequentially forming a transflective layer and a sacrificial layer on the patterned light shielding layer;

a3) patterning the sacrificial layer by applying photoresist;

a4) selectively etching and patterning the externally exposed semi-transmissive layer with an etchant mixed with H ₂ O, H ₂ O ₂ , and NH ₄ OH using the patterned sacrificial layer as a protective film;

a5) removing the photoresist and the sacrificial layer on the transflective layer;

It provides a halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a. This prevents corrosion of the transflective layer through the sacrificial layer, and by using the selective etching solution of the transflective layer to also exclude the corrosion of the components of the other layer to provide a high quality halftone mask.

In addition, the present invention comprises the steps of sequentially forming a transflective layer, a sacrificial layer, a light shielding layer on the transparent substrate b1);

b2) patterning the light blocking layer by applying a photoresist on the light blocking layer;

b3) applying a photoresist to the sacrificial layer under the light shielding layer and patterning the photoresist;

b4) selectively etching and patterning the transflective layer with an etchant mixed with H ₂ O, H ₂ O ₂ , and NH ₄ OH using the patterned sacrificial layer as a protective film;

b5) removing the photoresist and the sacrificial layer over the transflective layer;

By providing a halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a, it is possible to ensure a variety of manufacturing methods.

In addition, the present invention c1) forming a light shielding layer on a transparent substrate and patterning the light shielding layer by applying a photoresist;

c2) sequentially forming a sacrificial layer including a transflective layer and a photosensitive material in the patterned light blocking layer;

c3) patterning the sacrificial layer;

c4) selectively etching and patterning the externally exposed semi-transmissive layer with an etchant mixed with H ₂ O, H ₂ O ₂ and NH ₄ OH using the patterned sacrificial layer as a protective film;

c5) removing the sacrificial layer on the transflective layer;

It provides a halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a. Through this, by using the sacrificial layer containing the photosensitive material, it is possible to reduce the photoresist process, thereby reducing the tact time of the process has the advantage of reducing the production cost.

The present invention also provides a method of manufacturing a halftone mask through selective etching of a transflective layer using a sacrificial layer, wherein the transflective layer is a Ti-based or a mixture containing Ti.

The present invention also provides a method of manufacturing a halftone mask through selective etching of a semi-transmissive layer using a sacrificial layer, characterized in that the sacrificial layer is made of Au-based or a mixture containing Au.

In addition, the present invention is that the etching solution for etching the transflective layer is a mixture of H ₂ O 40 ~ 90% by weight, H ₂ O ₂ 5 ~ 30% by weight, NH ₄ OH 30 ~ 5% by weight based on 100% by weight By providing a halftone mask manufacturing method through the selective etching of the semi-transmissive layer using the sacrificial layer characterized in that, it is possible to selectively etch only the semi-transmissive layer.

In addition, the present invention, the etching solution of the semi-transmissive layer is a mixture of H ₂ O, H ₂ O ₂ , NH ₄ OH ratio of 7 ~ 13: 1 ~ 5: 5 ~ 1 semi-transmissive using a sacrificial layer, characterized in that A method for producing a halftone mask through selective etching of a film is provided.

The present invention also provides a method of manufacturing a halftone mask through selective etching of a semi-transmissive layer using a sacrificial layer, wherein the light blocking layer is a Cr thin film or a Cr or CrO-based material.

In addition, the present invention is a halftone mask blank for manufacturing a halftone mask, a light shielding layer, a transflective layer made of a Ti-based material, a sacrificial layer on a transparent substrate for manufacturing a halftone mask according to claim 6 It provides a halftone mask blank characterized in that it comprises.

In addition, the present invention, when manufacturing a halftone mask using a mask blank, using the above-described halftone mask blank, in etching the semi-transmissive layer formed of the Ti-based material, based on 100% by weight H ₂ O 40 to 90% by weight, H ₂ O ₂ 5 to 30% by weight, NH ₄ OH 30 to 5% by weight to provide a halftone mask prepared by the process of selectively etching by a mixed etching solution.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2A is a flowchart illustrating a halftone mask manufacturing process according to the present invention.

First, the light blocking layer 20 is placed on the transparent substrate 10, the photoresist 50 is coated on the light blocking layer, and a predetermined pattern is formed on the photoresist. The layer 20 is patterned (S1 to S3). In this case, the lamination method may use a coating method or a printing method. In this case, the light shielding layer may be used as long as it is a material that blocks light. Preferably, the light shielding layer is made of a Cr thin film, Cr or CrO-based material, and the semi-transmissive layer is preferably formed of a Ti-based material. Do. After the light shielding layer is patterned, the photoresist 50 is removed. Removal of the photoresist 50 generally utilizes sodium hydroxide or sodium-based solutions.

Next, the transflective layer 30 is stacked on the patterned light shielding layer 20, and the sacrificial layer 40 is stacked on the patterned light shielding layer 20. The photoresist 50 is coated on the sacrificial layer to pattern the sacrificial layer (S5 to S7). The sacrificial layer 40 may be any material that is resistant to the environment for etching the light shielding film, but is preferably an Au-based material or a mixture containing Au. In particular, in the method of patterning the sacrificial layer, a predetermined pattern is formed on the photoresist 50, and patterning is performed through exposure and development. When the pattern is formed, the sacrificial layer 40 is exposed to the outside. In this case, the etching solution for etching the sacrificial layer is preferably iodine-based I-based, thereby patterning the sacrificial layer.

In the next step, only the semi-transmissive layer 30 is selectively etched and patterned using a predetermined etching solution using the sacrificial layer as a protective film. Etching liquid for selectively etching the transflective layer is preferably a mixture of H ₂ O 40 to 90% by weight, H ₂ O ₂ 5 to 30% by weight, NH ₄ OH 30 to 5% by weight, and the mixing ratio The ratio of each component is 7-13: 1-5: 5-1 is preferable. In addition, the selective etching of the transflective layer is preferably performed for 5 minutes to 2 hours. In particular, the mixed solution is preferably etched after immersion for about 30 minutes to 1 hour. This is for the proper mixing of the mixed liquid to be formed so that efficient etching is realized (S8).

Next steps S9 to S10 remove the photoresist and the sacrificial layer to complete a halftone mask.

Figure 2b is another embodiment which is a slightly different manufacturing process from the above-described manufacturing process. The sign of each layer was matched with the sign of FIG. 2A.

In general, the transflective layer 30, the sacrificial layer 40, and the light shielding layer 20 are sequentially stacked on the transparent substrate 10, and then the photoresist 50 is disposed on the light blocking layer 20. After coating and predetermined patterning on the photoresist, the light shielding layer is patterned through exposure and development processes (T1 to T2) based on this.

Thereafter, the photoresist is applied again (T3) to pattern the sacrificial layer 40 exposed to the outside. This process also forms a predetermined pattern in the photoresist (T4), and based on this pattern the sacrificial layer (T5). Next, the transflective layer 30 is patterned using the sacrificial layer as a protective film (T6). In this case, the etching solution for etching the semi-transmissive layer is an etching solution capable of selectively etching only the semi-transmissive layer, as described above, based on 100% by weight of H ₂ O 40 to 90% by weight, H ₂ O ₂ 5 to 30% by weight, A mixture of NH ₄ OH 30 to 5% by weight is preferable, and the mixing ratio is preferably 7 to 13: 1 to 5: 5 to 1 ratio of each component.

Subsequently, a halftone mask is manufactured by removing the photoresist remaining on the light blocking layer and the sacrificial layer on the upper surface of the transflective layer not covered by the light blocking layer (T7).

Hereinafter, another embodiment of the present invention will be described.

In another exemplary embodiment, the halftone mask described above with reference to FIG. 2A is substantially the same as in the manufacturing process, but the photoresist may be included in the sacrificial layer to be formed in one process.

That is, in the process of FIG. 2A, forming a light shielding layer on the transparent substrate and patterning the light shielding layer by applying a photoresist; Sequentially forming a sacrificial layer including a transflective layer and a photosensitive material in the patterned light blocking layer; Patterning the sacrificial layer; applying the photoresist to the sacrificial layer to shorten the patterning of the photoresist and the process of patterning the sacrificial layer based on the photoresist in one process, so that the sacrificial layer can be realized. The photosensitive material is included in the sacrificial layer to form the sacrificial layer by etching after forming a predetermined pattern. This process also has the advantage of reducing the process time by eliminating the process of finally removing the photoresist again.

In the present invention, there is an advantage that can provide a halftone mask blank for manufacturing a halftone mask produced by the above-described process.

In general, the halftone mask blank refers to a structure in which the halftone mask blank is stacked with a transparent substrate, a light shielding layer, a transflective layer, and a sacrificial layer before the photomask is manufactured. The halftone mask blank having the sacrificial layer removes unnecessary etching of the semi-transmissive layer in the above-described manufacturing process, prevents corrosion of the substrate, and becomes a raw material capable of producing a halftone mask of higher quality. In the case of the blank of the halftone mask described above, the transflective layer stacked on the transparent substrate is preferably formed of a Ti-based material. In addition, the sacrificial layer is preferably formed of a mixture containing Au. In manufacturing the halftone mask using the halftone mask blank, semi-transmissive selective etching is applied in the above-described manufacturing process, and the etching solution is based on 100% by weight of H ₂ O 40 to 90% by weight, H ₂ O _{2 to} 5 to 30% by weight, NH ₄ OH 30 to 5% by weight is manufactured through a process that is selectively etched by a mixed etching solution, it is possible to prevent corrosion of the transparent substrate and the light shielding layer in a more efficient manufacturing process.

As described above, the present invention may form a sacrificial layer on the transflective layer formed of a Ti-based material, thereby preventing corrosion of the transflective layer, thereby improving quality of the halftone mask. In addition, when etching the semi-transmissive layer formed of a Ti-based material, only the semi-transmissive layer can be selectively etched through a mixed etching solution of H ₂ O, H ₂ O _{2 ,} and NH ₄ OH, thereby providing a layer other than the semi-transmissive layer. To prevent loss through corrosion. That is, the advantage of being able to manufacture a halftone mask that can realize a significantly improved yield by eliminating corrosion of the light shielding layer and the transparent substrate by using the sacrificial layer and the use of the mixed etching solution.

In the foregoing detailed description of the present invention, specific examples have been described. However, various modifications are possible within the scope of the present invention. The technical idea of the present invention should not be limited to the embodiments of the present invention but should be determined by the equivalents of the claims and the claims.

1 is a schematic diagram showing the configuration of a general halftone mask.

2A and 2B illustrate a method of manufacturing a halftone mask according to the present invention.

Claims (10)

a1) forming a light shielding layer on the transparent substrate, and patterning by applying a photoresist to the light shielding layer; a2) sequentially forming a transflective layer and a sacrificial layer on the patterned light shielding layer; a3) patterning the sacrificial layer by applying photoresist; a4) selectively etching and patterning the transflective layer with an etchant mixed with H ₂ O, H ₂ O ₂ , and NH ₄ OH using the patterned sacrificial layer as a protective film; a5) removing the photoresist and the sacrificial layer on the transflective layer; A halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a. b1) sequentially forming a sacrificial layer and a shading layer made of a semi-transmissive layer composed of a Ti-based or a Ti-containing mixture and a mixture containing Au-based or Au on a transparent substrate; b2) patterning the light blocking layer by applying a photoresist on the light blocking layer; b3) applying a photoresist to the sacrificial layer under the light shielding layer and patterning the photoresist; b4) selectively etching and patterning the transflective layer with an etchant mixed with H ₂ O, H ₂ O ₂ , and NH ₄ OH using the patterned sacrificial layer as a protective film; b5) removing the photoresist on the transflective layer and the sacrificial layer on the upper surface of the transflective layer not covered by the light shielding layer; A halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a. c1) forming a light blocking layer on the transparent substrate and patterning the light blocking layer by applying a photoresist; c2) sequentially forming a sacrificial layer including a transflective layer and a photosensitive material in the patterned light blocking layer; c3) patterning the sacrificial layer; c4) selectively etching and patterning the transflective layer with an etchant mixed with H ₂ O, H ₂ O ₂ , and NH ₄ OH using the patterned sacrificial layer as a protective film; c5) removing the sacrificial layer on the transflective layer; A halftone mask manufacturing method through the selective etching of the semi-transmissive film using a sacrificial layer comprising a. The method according to claim 1 or 3, The semi-transmissive layer is a half-tone mask manufacturing method through the selective etching of the transflective layer using a sacrificial layer, characterized in that the Ti-based or a mixture containing Ti. The method of claim 4, The sacrificial layer is a half-tone mask manufacturing method through the selective etching of the transflective film using a sacrificial layer, characterized in that consisting of Au-based or a mixture containing Au. The method of claim 5, The etching solution for etching the transflective layer is a sacrificial layer, characterized in that the mixture of H ₂ O 40 to 90% by weight, H ₂ O ₂ 5 to 30% by weight, NH ₄ OH 30 to 5% by weight based on 100% by weight Halftone mask manufacturing method through the selective etching of the transflective film using. The method of claim 5, Etching solution of the semi-transmissive layer is H ₂ O, H ₂ O ₂ , NH ₄ OH compounding ratio of 7 ~ 13: 1 ~ 5: 5 ~ 1 through the selective etching of the semi-transmissive layer using a sacrificial layer, characterized in that Halftone mask manufacturing method. The method of claim 7, The light blocking layer is a Cr thin film or a method of manufacturing a halftone mask by selectively etching a semi-transmissive film using a sacrificial layer, characterized in that the Cr or CrO-based material. Transparent substrate, transflective layer, sacrificial layer, light shielding layer are sequentially stacked, The transflective layer is made of a Ti-based material, The sacrificial layer is made of Au-based or a mixture containing Au, The light shielding layer is made of Cr or CrO-based material, Halftone mask blank applied to the halftone mask manufacturing method of claim 2. Transparent substrate; A semi-transmissive layer formed of a Ti-based material stacked on the transparent substrate; A light transmitting part exposing the transparent substrate by patterning the transflective layer; A sacrificial layer laminated on a part of the upper surface of the transflective layer and made of Au-based or a mixture containing Au; And A light blocking layer stacked on an upper surface of the sacrificial layer and made of Cr or CrO-based material; Halftone mask prepared by the halftone mask manufacturing method of claim 2 comprising a.

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