KR101322410B1

KR101322410B1 - Apparatus for Chemical-Mechanical Polishing of Wafer

Info

Publication number: KR101322410B1
Application number: KR1020120023719A
Authority: KR
Inventors: 김오수; 박선일
Original assignee: 김오수
Priority date: 2012-03-08
Filing date: 2012-03-08
Publication date: 2013-10-28
Also published as: KR20130102699A

Abstract

본 발명은 화학기계식 웨이퍼연마장치에 관한 것으로서, 화학기계식 웨이퍼연마장치에 있어서, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링의 내표면에 유지링촬상영역이 설정될 수 있도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 유지링의 내표면을 둘레방향을 따라 연속적으로 촬상하는 촬상카메라와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역을 향해 조명할 수 있도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 유지링촬상영역을 향해 조명하는 조명부와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역을 향해 세정가스를 분사할 수 있도록 상기 베이스지지체에 설치된 유지링세정가스노즐을 가지고 외부로부터의 제어신호에 따라 상기 유지링촬상영역을 향해 세정가스를 분사하는 유지링세정가스분사부와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역과 상기 촬상카메라의 렌즈 사이에 송풍영역이 설정되도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 송풍영역을 향해 송풍하는 송풍부를 포함하고; 상기 연마제어부는 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 웨이퍼교체부의 언로딩동작이 종료되는 언로딩종료시점과 상기 웨이퍼교체부의 로딩동작이 시작되는 로딩개시시점사이에 상기 조명부가 상기 유지링촬상영역을 향해 조명하고 상기 유지링세정가스분사부가 상기 유지링촬상영역을 향해 세정가스를 분사하며 상기 송풍부가 송풍영역을 향해 송풍하도록 상기 조명부의 조명동작, 상기 유지링세정가스분사부의 분사동작 및 상기 송풍부의 송풍동작을 제어하고 상기 조명부에 의한 조명동작, 상기 유지링세정가스분사부에 의한 분사동작 및 상기 송풍부에 의한 송풍동작이 시작된 후 상기 촬상카메라의 촬상동작이 이루어지도록 상기 촬상카메라를 제어하고, 상기 유지링의 내표면에 웨이퍼손상을 일으키는 손상야기스크래치가 발생했다는 것을 나타내는 연마중지신호가 외부로부터 입력될 때 상기 웨이퍼대기위치로부터 상기 트랜스퍼판으로 웨이퍼가 로딩되는 동작이 중지되고 상기 멤브레인에 흡착된 웨이퍼에 대한 연마작업을 진행하고 상기 트랜스퍼판으로부터 상기 웨이퍼인출위치로 연마작업중인 모든 웨이퍼가 순차적으로 언로딩되도록 상기 웨이퍼교체부, 상기 패드지지판회전구동부, 상기 헤드지지체회전구동부, 상기 헤드바디부회전구동부, 상기 헤드바디부직선이동구동부, 상기 연마제슬러리공급부 및 상기 트랜스퍼판직선이동구동부를 제어하고 상기 트랜스퍼판으로부터 상기 웨이퍼인출위치로 연마작업중인 모든 웨이퍼가 언로딩된 후 상기 웨이퍼교체부, 상기 패드지지판회전구동부, 상기 헤드지지체회전구동부, 상기 헤드바디부회전구동부, 상기 헤드바디부직선이동구동부, 상기 연마제슬러리공급부 및 상기 트랜스퍼판직선이동구동부에 대한 제어동작을 중지하는 것을 특징으로 한다. 이에 의해, 유지링의 내표면에 발생한 스크래치에 의해 웨이퍼가 손상되는 것을 방지할 수 있다.The present invention relates to a chemical mechanical wafer polishing apparatus, wherein in a chemical mechanical wafer polishing apparatus, a holding ring imaging area can be set on an inner surface of the holding ring when the head body portion is disposed above the transfer plate. An image pickup camera mounted on the base support and continuously imaging the inner surface of the retaining ring along the circumferential direction in accordance with a control signal from the outside; and the retaining ring photographing when the head body portion is disposed above the transfer plate. An illumination unit installed on the base support to illuminate toward an area and illuminating toward the retaining ring photographing area according to a control signal from the outside, and the retaining ring photographing when the head body is disposed above the transfer plate; Retaining ring installed on the base support to spray cleaning gas toward the area The retaining ring cleaning gas ejection section for ejecting the cleaning gas toward the retaining ring photographing area according to a control signal from the outside with a constant gas nozzle, and the retaining ring photographing when the head body is disposed above the transfer plate. An air blowing unit installed in the base support such that an air blowing area is set between an area and a lens of the imaging camera and blowing toward the air blowing area according to a control signal from the outside; The polishing control unit may include the lighting unit between an unloading end point at which the unloading operation of the wafer replacement unit is terminated and a loading start point at which the loading operation of the wafer replacement unit starts when the head body is disposed above the transfer plate. Illumination of the lighting unit to illuminate the retaining ring photographing area, the retaining ring cleaning gas injection unit sprays cleaning gas toward the retaining ring photographing area, and the blower blows toward the blowing area, and the retaining ring cleaning gas injection unit To control the blowing operation and the blowing operation of the blower, and to perform the imaging operation of the imaging camera after the lighting operation by the illumination unit, the injection operation by the holding ring cleaning gas injection unit, and the blowing operation by the blowing unit are started. Damage to control the imaging camera and cause wafer damage on the inner surface of the retaining ring When the polishing stop signal indicating that the scratch has occurred is input from the outside, the operation of loading the wafer from the wafer standby position to the transfer plate is stopped, and polishing operation on the wafer adsorbed to the membrane is performed. The wafer replacement portion, the pad support plate rotation drive portion, the head support rotation drive portion, the head body portion rotation drive portion, the head body nonlinear movement drive portion, the abrasive so that all wafers being polished to the wafer withdrawal position are sequentially unloaded. The wafer replacement unit, the pad support plate rotation drive unit, the head support rotation drive unit, and the head after controlling the slurry supply unit and the transfer plate linear drive unit and unloading all wafers being polished from the transfer plate to the wafer withdrawal position. Body part rotation drive Characterized in that the head body portion linear movement drive, stop the control operation on the abrasive slurry supply section and the transfer plate linear motion drive. Thereby, it is possible to prevent the wafer from being damaged by the scratch generated on the inner surface of the retaining ring.

Description

Apparatus for Chemical-Mechanical Polishing of Wafer

본 발명은 화학기계식 웨이퍼연마장치에 관한 것으로서, 보다 상세하게는 슬러리에 포함된 연마제 및 연마패드의 표면 돌기를 웨이퍼의 표면과 마찰시키는 방법으로 웨이퍼의 표면을 기계적/화학적으로 연마하는데 사용되는 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical wafer polishing apparatus, and more particularly, to an apparatus used to mechanically and chemically polish a surface of a wafer by rubbing the surface projections of the polishing pad and the polishing pad contained in the slurry with the surface of the wafer. It is about.

집적 회로와 기타 전자 소자를 제조할 때 사용되는 웨이퍼는 전도성 재료, 반전도성(半傳導性) 재료 및 유전성(誘傳性) 재료로 된 다수의 층들을 기판의 표면에 증착하거나 제거하는 공정을 거쳐 제작된다.Wafers used in the manufacture of integrated circuits and other electronic devices are subjected to the process of depositing or removing a plurality of layers of conductive, semiconductive and dielectric materials on the surface of the substrate. Is produced.

이와 같이 제작된 웨이퍼의 표면은 증착이나 제거동작을 거치는 과정에서 평탄하지 않게 되므로 연마(polishing) 공정을 통해 평탄화시키게 된다.Since the surface of the wafer thus manufactured is not flat during the deposition or removal operation, the surface of the wafer is planarized through a polishing process.

웨이퍼를 연마하기 위한 장치의 하나로 슬러리에 포함된 연마제 및 연마패드의 표면 돌기를 웨이퍼의 표면과 마찰시키는 방법으로 웨이퍼의 표면을 기계적/화학적으로 연마하는 화학기계식 웨이퍼연마장치가 안출되어 사용되고 있다.As an apparatus for polishing a wafer, a chemical mechanical wafer polishing apparatus for mechanically / chemically polishing the surface of a wafer is devised and used by rubbing the surface protrusions of the abrasive and the polishing pad included in the slurry with the surface of the wafer.

도10은 종래 화학기계식 웨이퍼연마장치의 결합사시도이고, 도11은 종래 화학기계식 웨이퍼연마장치의 유지링을 도시한 도면이고, 도12는 종래 화학기계식 웨이퍼연마장치의 연마스테이션과 연마헤드부를 도시한 도면이고, 도13은 종래 화학기계식 웨이퍼연마장치의 트랜스퍼스테이션과 연마헤드부를 도시한 도면이고, 도14는 종래 화학기계식 웨이퍼연마장치의 제어블럭도이고, 도15는 종래 화학기계식 웨이퍼연마장치의 연마동작을 설명하기 위한 도면이다.10 is a perspective view of a combination of a conventional chemical mechanical wafer polishing apparatus, FIG. 11 is a view showing a retaining ring of a conventional chemical mechanical wafer polishing apparatus, and FIG. 12 shows a polishing station and a polishing head of a conventional chemical mechanical wafer polishing apparatus. 13 is a view showing a transfer station and a polishing head of a conventional chemical mechanical wafer polishing apparatus, FIG. 14 is a control block diagram of a conventional chemical mechanical wafer polishing apparatus, and FIG. 15 is a polishing of a conventional chemical mechanical wafer polishing apparatus. It is a figure for demonstrating operation | movement.

종래의 화학기계식 웨이퍼연마장치는, 이들 도면에 도시된 바와 같이, 이들 도면에 도시된 바와 같이, 지지면(111a)을 갖는 베이스지지체(111)와, 각각 베이스지지체(111)에 설치된 패드지지판(121)을 구비한 3개의 연마스테이션(120)과, 각각 베이스지지체(111)에 설치된 연마헤드지지체(131)와, 연마헤드지지체(131)에 설치된 헤드바디부(132a)를 구비한 4개의 연마헤드부(132)와, 연마헤드부(132)를 구동하는 멤브레인흡입팽창부(133), 헤드지지체회전구동부(134), 헤드바디부회전구동부(135) 및 헤드바디부직선이동구동부(136)와, 베이스지지체(111)에 설치된 트랜스퍼판(141)을 구비한 트랜스퍼스테이션(140)과, 웨이퍼를 트랜스퍼판(141)으로 로딩(Loading)하거나 트랜스퍼판(141)으로부터 웨이퍼를 언로딩(Unloading)하는 웨이퍼교체부(151)와, 후술하는 연마패드(122)의 상면에 연마제슬러리를 공급하는 연마제슬러리공급부(152)와 베이스지지체(111)에 설치된 컨디셔너(162) 및 세척수분사부(163)와, 전체 연마공정을 제어하는 연마제어부(164)를 갖고 있다.Conventional chemical mechanical wafer polishing apparatus, as shown in these figures, as shown in these figures, a base support 111 having a support surface 111a, and a pad support plate provided on each of the base support 111 ( Four polishing stations including three polishing stations 120 having 121, a polishing head support 131 provided on the base support 111, and a head body portion 132a provided on the polishing head support 131, respectively. The head part 132, the membrane suction expansion part 133 which drives the polishing head part 132, the head support rotation drive part 134, the head body rotation drive part 135, and the head body nonlinear movement drive part 136 And a transfer station 140 having a transfer plate 141 provided on the base support 111, and loading the wafer into the transfer plate 141 or unloading the wafer from the transfer plate 141. It is connected to the upper surface of the wafer replacement unit 151 and the polishing pad 122 described later. An abrasive slurry supply unit 152 for supplying a horseshoe slurry, a conditioner 162 and a washing water spraying unit 163 provided in the base support 111, and an abrasive control unit 164 for controlling the entire polishing process are provided.

베이스지지체(111)는 도시되지 않은 커버에 의해 둘러싸여 있다.The base support 111 is surrounded by a cover not shown.

각 연마스테이션(120)은 패드지지판(121)에 더하여 패드지지판(121)에 설치된 연마패드(122)와, 연마제어부(164)로부터의 제어신호에 따라 패드지지판(121)을 회전구동하는 패드지지판회전구동부(123)를 갖고 있다.In addition to the pad support plate 121, each polishing station 120 includes a polishing pad 122 provided on the pad support plate 121, and a pad support plate for rotationally driving the pad support plate 121 according to a control signal from the polishing control unit 164. It has the rotation drive part 123.

연마패드(122)는 상면이 지지면(111a)보다 높은 위치에 배치되도록 패드지지판(121)에 설치된다.The polishing pad 122 is installed on the pad support plate 121 so that an upper surface thereof is disposed at a position higher than the support surface 111a.

패드지지판회전구동부(123)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The pad support plate rotation driving unit 123 may be implemented using a rotation driving mechanism such as a motor as is widely known in the art.

연마헤드지지체(131)는 십자형태로 구성되어 있고, 연마패드(122)보다 높은 위치에서 베이스지지체(111)에 대하여 회전할 수 있도록 베이스지지체(111)에 설치된다.The polishing head support 131 is formed in a cross shape, and is installed in the base support 111 so as to rotate relative to the base support 111 at a position higher than the polishing pad 122.

각 연마헤드부(132)는 헤드바디부(132a)에 더하여 헤드바디부(132a)의 저면에 결합된 멤브레인(132b)과, 헤드바디부(132a)의 저면에 결합된 유지링(132c)을 갖고 있다.Each polishing head portion 132 includes a membrane 132b coupled to the bottom of the head body 132a in addition to the head body 132a, and a retaining ring 132c coupled to the bottom of the head body 132a. Have

헤드바디부(132a)는 연마헤드지지체(131)에 대하여 회전할 수 있고 지지면(111a)을 향해 직선이동할 수 있도록 연마헤드지지체(131)에 설치된다.The head body 132a may be installed on the polishing head support 131 so that the head body 132a may rotate with respect to the polishing head support 131 and may linearly move toward the support surface 111a.

유지링(132c)은 멤브레인(132b)보다 낮은 위치에 배치되도록 헤드바디부(132a)의 저면에 결합된다.The retaining ring 132c is coupled to the bottom of the head body portion 132a to be disposed at a lower position than the membrane 132b.

멤브레인흡입팽창부(133)는 연마제어부(164)로부터의 제어신호에 따라 진공압을 이용하여 멤브레인(132b)이 연마헤드부(132)를 향해 볼록해지도록 멤브레인(132b)에 흡입력을 인가하고, 연마제어부(164)로부터의 제어신호에 따라 멤브레인(132b)이 지지면(111a)을 향해 볼록해지도록 멤브레인(132b)에 팽창력을 인가한다. 이러한 기능을 수행하는 멤브레인흡입팽창부(133)는 종래 널리 사용되고 있으므로 상세한 설명을 생략하기로 한다.The membrane suction expansion unit 133 applies a suction force to the membrane 132b so that the membrane 132b is convex toward the polishing head 132 using a vacuum pressure according to a control signal from the polishing control unit 164. An expansion force is applied to the membrane 132b so that the membrane 132b is convex toward the support surface 111a according to a control signal from the polishing control unit 164. Since the membrane suction expansion unit 133 performing this function is widely used in the related art, a detailed description thereof will be omitted.

헤드지지체회전구동부(134)는 연마제어부(164)로부터의 제어신호에 따라 연마헤드지지체(131)를 회전구동한다.The head support rotation driving unit 134 rotates the polishing head support 131 according to a control signal from the polishing control unit 164.

이러한 구성을 갖는 헤드지지체회전구동부(134)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The head support rotary drive unit 134 having such a configuration can be implemented using a rotary drive mechanism such as a motor as is widely known in the art.

헤드바디부회전구동부(135)는 연마제어부(164)로부터의 제어신호에 따라 헤드바디부(132a)를 연마헤드지지체(131)에 대하여 회전구동한다.The head body rotation driving unit 135 rotates the head body 132a with respect to the polishing head support 131 according to a control signal from the polishing control unit 164.

이러한 구성을 갖는 헤드바디부회전구동부(135)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The head body rotary drive unit 135 having such a configuration can be implemented using a rotary drive mechanism such as a motor as is widely known in the art.

헤드바디부직선이동구동부(136)는 연마제어부(164)로부터의 제어신호에 따라 헤드바디부(132a)를 초기설치위치와 연마패드(122)에 의해 웨이퍼가 연마되는 웨이퍼연마위치 사이로 왕복이동시킨다.The head body non-linear driving unit 136 reciprocates the head body 132a between the initial installation position and the wafer polishing position at which the wafer is polished by the polishing pad 122 according to a control signal from the polishing control unit 164. .

이러한 구성을 갖는 헤드바디부직선이동구동부(136)는 종래 널리 알려진 바와 같이 유압실린더 등과 같은 직선구동기구를 사용하여 구현할 수 있다.The head body nonlinear linear driving unit 136 having such a configuration may be implemented using a linear driving mechanism such as a hydraulic cylinder as is widely known in the art.

트랜스퍼스테이션(140)은 베이스지지체(111)에 설치된 트랜스퍼판(141)과, 트랜스퍼판(141)을 지지하는 안착컵(142)과, 트랜스퍼판(141)을 왕복이동시키는 트랜스퍼판직선이동구동부(143)를 갖고 있다.The transfer station 140 includes a transfer plate 141 installed on the base support 111, a seating cup 142 supporting the transfer plate 141, and a transfer plate linear moving part for reciprocating the transfer plate 141. 143).

트랜스퍼판(141)은 지지면(111a)에 나란하게 배치되도록 설치되어 있다.The transfer plate 141 is provided to be arranged side by side on the support surface 111a.

이러한 구성을 갖는 트랜스퍼판(141)은 지지면(111a)으로부터 멀어지는 방향을 따라 직선이동할 수 있게 된다.The transfer plate 141 having such a configuration can move linearly along the direction away from the support surface 111a.

트랜스퍼판직선이동구동부(143)는 외부로부터의 제어신호에 따라 트랜스퍼판(141)을 초기설치위치와 트랜스퍼판(141)으로부터 헤드바디부(132a)로 웨이퍼가 전달되는 웨이퍼전달위치 사이로 왕복이동시킬 수 있게 된다.The transfer plate linear movement driver 143 reciprocates the transfer plate 141 between the initial installation position and the wafer transfer position from which the wafer is transferred from the transfer plate 141 to the head body 132a according to a control signal from the outside. It becomes possible.

이러한 구성을 갖는 트랜스퍼판직선이동구동부(143)는 종래 널리 알려진 바와 같이 유압실린더 등과 같은 직선구동기구를 사용하여 구현할 수 있다.The transfer plate linear driving unit 143 having such a configuration may be implemented using a linear driving mechanism such as a hydraulic cylinder as is widely known in the art.

웨이퍼교체부(151)는 종래 널리 알려진 바와 같이 로봇기구를 사용하여 구현할 수 있다.The wafer replacement unit 151 may be implemented using a robot mechanism as is widely known in the art.

웨이퍼교체부(151)는 연마제어부(164)로부터의 제어신호에 따라 트랜스퍼판(141)으로부터 소정의 웨이퍼인출위치(151b)로 웨이퍼를 언로딩(Unloading)하고, 연마제어부(164)로부터의 제어신호에 따라 소정의 웨이퍼대기위치(151a)로부터 트랜스퍼판(141)으로 웨이퍼를 로딩(Loading)하도록 동작한다.The wafer replacement unit 151 unloads the wafer from the transfer plate 141 to the predetermined wafer withdrawal position 151b according to a control signal from the polishing control unit 164, and controls the polishing control unit 164. The wafer is loaded from the predetermined wafer standby position 151a into the transfer plate 141 according to the signal.

연마제슬러리공급부(152)는 종래 널리 알려진 바와 같이 연마제어부(164)로부터의 제어신호에 따라 연마패드(122)의 상면에 연마제슬러리를 공급한다.The abrasive slurry supply unit 152 supplies the abrasive slurry to the upper surface of the polishing pad 122 in accordance with a control signal from the polishing control unit 164, as is widely known in the art.

연마제어부(164)는 출력단에는 패드지지판회전구동부(123), 멤브레인흡입팽창부(133), 헤드지지체회전구동부(134), 헤드바디부회전구동부(135), 헤드바디부직선이동구동부(136), 트랜스퍼판직선이동구동부(143), 웨이퍼교체부(151) 및 연마제슬러리공급부(152)가 연결되어 있다.The polishing control unit 164 has a pad support plate rotary drive unit 123, a membrane suction expansion unit 133, a head support rotary drive unit 134, a head body rotary drive unit 135, a head body non-linear movement drive unit 136 at the output end The transfer plate linear drive unit 143, the wafer replacement unit 151, and the abrasive slurry supply unit 152 are connected.

이러한 구성을 갖는 연마제어부(164)의 제어동작을 설명하면 다음과 같다. 설명의 편의를 위해 연마스테이션(120)을 반시계방향으로 순차적으로 제1연마스테이션(120-1), 제2연마스테이션(120-2) 및 제3연마스테이션(120-3)이라고 하고, 컨디셔너(162)를 반시계방향으로 순차적으로 제1컨디셔너(162-1, 제1연마스테이션에 대응하는 컨디셔너가 됨), 제2컨디셔너(162-2) 및 제3컨디셔너(162-3)라고 하고, 연마제슬러리공급부(152)를 반시계방향으로 순차적으로 제1연마제슬러리공급부(1제1연마스테이션에 대응하는 연마제슬러리공급부가 됨), 제2연마제슬러리공급부 및 제3연마제슬러리공급부라고 하고, 연마헤드부(132)는 트랜스퍼판(141)과 3개의 연마패드(122) 상측에 배치되어 있는 것으로 가정하고, 연마헤드부(132)를 반시계방향으로 순차적으로 제1연마헤드부(132-1, 제1연마스테이션의 상측에 배치된 연마헤드부가 됨), 제2연마헤드부(132-2), 제3연마헤드부(132-3) 및 제4헤드바디부(132-4, 트랜스퍼판 상측에 배치된 연마헤드부가 됨)라고 한다.Referring to the control operation of the polishing control unit 164 having such a configuration is as follows. For convenience of description, the polishing station 120 is referred to as a first polishing station 120-1, a second polishing station 120-2 and a third polishing station 120-3 in a counterclockwise order, and is a conditioner. 162 is sequentially referred to as a first conditioner 162-1 (a conditioner corresponding to the first polishing station), a second conditioner 162-2 and a third conditioner 162-3 in a counterclockwise direction, The abrasive slurry supply unit 152 is called a first abrasive slurry supply unit (which becomes an abrasive slurry supply unit corresponding to the first polishing station), a second abrasive slurry supply unit, and a third abrasive slurry supply unit sequentially in a counterclockwise direction, and the polishing head It is assumed that the portion 132 is disposed above the transfer plate 141 and the three polishing pads 122, and the polishing head portion 132 is sequentially disposed in the counterclockwise direction with the first polishing head portion 132-1. A polishing head portion disposed above the first polishing station), a second polishing head portion 132-2, and a third Called town head (132-3) and a fourth head body portion (the portion disposed in the grinding head 132-4, the upper transfer plate).

먼저 연마제어부(164)는 웨이퍼대기위치(151a)에 있는 웨이퍼가 트랜스퍼판(141)으로 로딩되도록 웨이퍼교체부(151)의 로딩동작을 제어한다(S111).First, the polishing control unit 164 controls the loading operation of the wafer replacement unit 151 so that the wafer at the wafer standby position 151a is loaded into the transfer plate 141 (S111).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 접근하도록 즉, 웨이퍼전달위치(트랜스퍼판로부터 헤드바디부로 웨이퍼가 전달되는 위치)에 트랜스퍼판(141)이 도달하도록 트랜스퍼판직선이동구동부(143)를 제어한다(S112).Then, the polishing control unit 164 approaches the fourth polishing head portion 132-4, that is, the transfer plate 141 reaches the wafer transfer position (the position at which the wafer is transferred from the transfer plate to the head body portion). The linear movement driving unit 143 is controlled (S112).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인(132b)에 트랜스퍼판(141)에 탑재된 웨이퍼가 흡착되도록 멤브레인흡입팽창부(133)를 제어한다(S113).Next, the polishing control unit 164 controls the membrane suction expansion unit 133 to adsorb the wafer mounted on the transfer plate 141 to the membrane 132b corresponding to the fourth polishing head unit 132-4 (S113). ).

다음에 연마제어부(164)는 트랜스퍼판(141)이 초기설치위치로 복귀하도록 트랜스퍼판직선이동구동부(143)를 제어한다(S114).Next, the polishing control unit 164 controls the transfer plate linear movement driving unit 143 so that the transfer plate 141 returns to the initial installation position (S114).

다음에 연마제어부(164)는 제1연마헤드부(132-1), 제2연마헤드부(132-2), 제3연마헤드부(132-3) 및 제4연마헤드부(132-4)가 세척수분사부(163)의 상측에 도달하도록 헤드지지체회전구동부(134)를 제어한다(S115).Next, the polishing control unit 164 includes a first polishing head portion 132-1, a second polishing head portion 132-2, a third polishing head portion 132-3, and a fourth polishing head portion 132-4. The head support rotation driving unit 134 is controlled to reach the upper side of the washing water spraying unit 163 (S115).

다음에 연마제어부(164)는 세척수분사부(163)로부터 세척수가 분사되도록 세척수분사부(163)를 제어한다(S116).Next, the polishing control unit 164 controls the washing water spraying unit 163 to spray the washing water from the washing water spraying unit 163 (S116).

다음에 연마제어부(164)는 제3연마헤드부(132-3)가 트랜스퍼판(141)의 상측에, 제4연마헤드부(132-4)가 제1연마스테이션(120-1)의 상측에, 제1연마헤드부(132-1)가 제2연마스테이션(120-2)의 상측에, 제2연마헤드부(132-2)가 제3연마스테이션(120-3)의 상측에 배치되도록 헤드지지체회전구동부(134)를 제어한다(S121).Next, in the polishing control unit 164, the third polishing head portion 132-3 is above the transfer plate 141, and the fourth polishing head portion 132-4 is above the first polishing station 120-1. The first polishing head portion 132-1 is disposed above the second polishing station 120-2, and the second polishing head portion 132-2 is disposed above the third polishing station 120-3. The head support rotation driving unit 134 is controlled to be made (S121).

다음에 연마제어부(164)는 제4연마헤드부(132-4)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S122).Next, the polishing control unit 164 controls the head body non-linear movement driving unit 136 so that the fourth polishing head portion 132-4 moves to the wafer polishing position (the position at which the wafer is polished by the polishing pad) (S122). ).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(133)를 제어한다(S123, 도15 참조).Next, the polishing control unit 164 controls the membrane suction expansion unit 133 so that the wafer adsorbed on the membrane corresponding to the fourth polishing head portion 132-4 is in pressure contact with the polishing pad (S123, see Fig. 15). .

다음에 연마제어부(164)는 미리 정해진 시간동안 제4연마헤드부(132-4)와 제1연마스테이션에 속하는 연마패드가 회전하고 제1컨디셔너(162-1)가 동작하고 제1슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(123), 헤드바디부회전구동부(135), 제1슬러리공급부 및 제1컨디셔너(162-1)를 제어한다(S124).Next, the polishing control unit 164 rotates the polishing pads belonging to the fourth polishing head portion 132-4 and the first polishing station for a predetermined time, and the first conditioner 162-1 operates to remove the first slurry supply unit. The pad support plate rotation driving unit 123, the head body rotation driving unit 135, the first slurry supply unit and the first conditioner 162-1 are controlled to stop after the abrasive slurry is supplied (S124).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인(132b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(133)를 제어한다(S125).Next, the polishing control unit 164 controls the membrane suction expansion unit 133 so that the wafer is again adsorbed to the membrane 132b corresponding to the fourth polishing head unit 132-4 (S125).

다음에 연마제어부(164)는 제4연마헤드부(132-4)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S126).Next, the polishing control unit 164 controls the head body non-linear movement driving unit 136 so that the fourth polishing head portion 132-4 moves to the initial installation position (S126).

한편 연마제어부(164)는 S121 내지 S126 단계가 진행되는 동안 제3연마헤드부(132-3)에 대하여 S111 내지 S114단계를 진행한다.Meanwhile, the polishing control unit 164 performs the steps S111 to S114 with respect to the third polishing head part 132-3 while the steps S121 to S126 are performed.

다음에 연마제어부(164)는 제1연마헤드부(132-1), 제2연마헤드부(132-2), 제3연마헤드부(132-3) 및 제4연마헤드부(132-4)가 세척수분사부(163)의 상측에 도달하도록 헤드지지체회전구동부(134)를 제어한다(S127).Next, the polishing control unit 164 includes a first polishing head portion 132-1, a second polishing head portion 132-2, a third polishing head portion 132-3, and a fourth polishing head portion 132-4. ) Controls the head support rotation driving unit 134 to reach the upper side of the washing water spraying unit 163 (S127).

다음에 연마제어부(164)는 세척수분사부(163)로부터 세척수가 분사되도록 세척수분사부(163)를 제어한다(S128).Next, the polishing control unit 164 controls the washing water spraying unit 163 to spray the washing water from the washing water spraying unit 163 (S128).

다음에 연마제어부(164)는 제2연마헤드부(132-2)가 트랜스퍼판(141)의 상측에, 제3연마헤드부(132-3)가 제1연마스테이션(120-1)의 상측에, 제4연마헤드부(132-4)가 제2연마스테이션(120-2)의 상측에, 제1연마헤드부(132-1)가 제3연마스테이션(120-3)의 상측에 배치되도록 헤드지지체회전구동부(134)를 제어한다(S131).Next, in the polishing control unit 164, the second polishing head portion 132-2 is located above the transfer plate 141, and the third polishing head portion 132-3 is located above the first polishing station 120-1. The fourth polishing head portion 132-4 is disposed above the second polishing station 120-2, and the first polishing head portion 132-1 is disposed above the third polishing station 120-3. The head support rotation driving unit 134 is controlled to be used (S131).

다음에 연마제어부(164)는 제4연마헤드부(132-4)와 제3연마헤드부(132-3)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S132).Then, the polishing control unit 164 moves the head body portion so that the fourth polishing head portion 132-4 and the third polishing head portion 132-3 move to the wafer polishing position (the position at which the wafer is polished by the polishing pad). The linear movement driving unit 136 is controlled (S132).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인에 흡착된 웨이퍼와 제3연마헤드부(132-3)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(133)를 제어한다(S133).Next, the polishing controller 164 presses the wafer adsorbed on the membrane corresponding to the fourth polishing head portion 132-4 and the wafer adsorbed on the membrane corresponding to the third polishing head portion 132-3 to the polishing pad. The membrane suction expansion portion 133 is controlled to contact (S133).

다음에 연마제어부(164)는 미리 정해진 시간동안 제4연마헤드부(132-4), 제3연마헤드부(132-3), 제1연마스테이션(120-1)에 속하는 연마패드 및 제2연마스테이션(120-2)에 속하는 연마패드가 회전하고 제1컨디셔너(162-1)와 제2컨디셔너(162-2)가 동작하고 제1슬러리공급부와 제2슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(123), 헤드바디부회전구동부(135), 제1슬러리공급부 및 제1컨디셔너(162-1)를 제어한다(S134).Next, the polishing control unit 164 includes a polishing pad belonging to the fourth polishing head portion 132-4, the third polishing head portion 132-3, the first polishing station 120-1, and the second polishing head portion 132-3 for a predetermined time. After the polishing pad belonging to the polishing station 120-2 is rotated, the first conditioner 162-1 and the second conditioner 162-2 are operated, and the abrasive slurry is supplied from the first slurry supply part and the second slurry supply part. The pad support plate rotation driving unit 123, the head body rotation driving unit 135, the first slurry supply unit and the first conditioner 162-1 are controlled to be stopped (S134).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인(132b)과 제3연마헤드부(132-3)에 대응하는 멤브레인(132b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(133)를 제어한다(S135).Next, the polishing control unit 164 may allow the wafer to be resorbed to the membrane 132b corresponding to the fourth polishing head 132-4 and the membrane 132b corresponding to the third polishing head 132-3. The suction expansion unit 133 is controlled (S135).

다음에 연마제어부(164)는 제4연마헤드부(132-4)와 제3연마헤드부(132-3)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S136).Next, the polishing control unit 164 controls the head body non-linear movement driving unit 136 so that the fourth polishing head portion 132-4 and the third polishing head portion 132-3 move to the initial installation position (S136). ).

한편 연마제어부(164)는 S131 내지 S136 단계가 진행되는 동안 제2연마헤드부(132-2)에 대하여 S111 내지 S114 단계를 진행한다.Meanwhile, the polishing control unit 164 performs the steps S111 to S114 with respect to the second polishing head part 132-2 while the steps S131 to S136 are performed.

다음에 연마제어부(164)는 제1연마헤드부(132-1), 제2연마헤드부(132-2), 제3연마헤드부(132-3) 및 제4연마헤드부(132-4)가 세척수분사부(163)의 상측에 도달하도록 헤드지지체회전구동부(134)를 제어한다(S137).Next, the polishing control unit 164 includes a first polishing head portion 132-1, a second polishing head portion 132-2, a third polishing head portion 132-3, and a fourth polishing head portion 132-4. The head support rotation driving unit 134 is controlled to reach the upper side of the washing water spraying unit 163 (S137).

다음에 연마제어부(164)는 세척수분사부(163)로부터 세척수가 분사되도록 세척수분사부(163)를 제어한다(S138).Next, the polishing control unit 164 controls the washing water spraying unit 163 to spray the washing water from the washing water spraying unit 163 (S138).

다음에 연마제어부(164)는 제1연마헤드부(132-1)가 트랜스퍼판(141)의 상측에, 제2연마헤드부(132-2)가 제1연마스테이션(120-1)의 상측에, 제3연마헤드부(132-3)가 제2연마스테이션(120-2)의 상측에, 제4연마헤드부(132-4)가 제3연마스테이션(120-3)의 상측에 배치되도록 헤드지지체회전구동부(134)를 제어한다(S141).Next, in the polishing control unit 164, the first polishing head portion 132-1 is above the transfer plate 141, and the second polishing head portion 132-2 is above the first polishing station 120-1. The third polishing head portion 132-3 is disposed above the second polishing station 120-2, and the fourth polishing head portion 132-4 is disposed above the third polishing station 120-3. The head support rotation drive unit 134 is controlled to be made (S141).

다음에 연마제어부(164)는 제4연마헤드부(132-4), 제3연마헤드부(132-3) 및 제2연마헤드부(132-2)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S142).Next, in the polishing control unit 164, the fourth polishing head portion 132-4, the third polishing head portion 132-3, and the second polishing head portion 132-2 are placed at the wafer polishing position (the wafer is polished by the polishing pad). The head body non-linear driving unit 136 is controlled to move to the position where it is polished (S142).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인에 흡착된 웨이퍼, 제3연마헤드부(132-3)에 대응하는 멤브레인에 흡착된 웨이퍼 및 제2연마헤드부(132-2)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(133)를 제어한다(S143).Next, the polishing control unit 164 includes a wafer adsorbed on the membrane corresponding to the fourth polishing head portion 132-4, a wafer adsorbed on the membrane corresponding to the third polishing head portion 132-3, and a second polishing head. The membrane suction expansion unit 133 is controlled such that the wafer adsorbed on the membrane corresponding to the unit 132-2 is in pressure contact with the polishing pad (S143).

다음에 연마제어부(164)는 미리 정해진 시간동안 제4연마헤드부(132-4), 제3연마헤드부(132-3), 제2연마헤드부(132-2), 제1연마스테이션(120-1)에 속하는 연마패드, 제2연마스테이션(120-2)에 속하는 연마패드 및 제3연마스테이션(120-3)에 속하는 연마패드가 회전하고, 제1컨디셔너(162-1), 제2컨디셔너(162-2) 및 제3컨디셔너(162-3)가 동작하고 제1슬러리공급부, 제2슬러리공급부 및 제3슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(123), 헤드바디부회전구동부(135), 제1슬러리공급부 및 제1컨디셔너(162-1)를 제어한다(S144).Next, the polishing control unit 164 performs a fourth polishing head portion 132-4, a third polishing head portion 132-3, a second polishing head portion 132-2, and a first polishing station for a predetermined time. The polishing pad belonging to 120-1), the polishing pad belonging to second polishing station 120-2, and the polishing pad belonging to third polishing station 120-3 are rotated, and the first conditioner 162-1 and the first polishing pad are rotated. The pad support plate rotation driving unit 123 so that the second conditioner 162-2 and the third conditioner 162-3 operate and are stopped after the abrasive slurry is supplied from the first slurry supply unit, the second slurry supply unit, and the third slurry supply unit; The head body rotation driving unit 135, the first slurry supply unit and the first conditioner 162-1 is controlled (S144).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인(132b), 제3연마헤드부(132-3)에 대응하는 멤브레인(132b) 및 제2연마헤드부(132-2)에 대응하는 멤브레인(132b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(133)를 제어한다(S145).Next, the polishing control unit 164 includes a membrane 132b corresponding to the fourth polishing head portion 132-4, a membrane 132b corresponding to the third polishing head portion 132-3, and a second polishing head portion ( The membrane suction expansion part 133 is controlled to resorb the wafer to the membrane 132b corresponding to 132-2 (S145).

다음에 연마제어부(164)는 제4연마헤드부(132-4), 제3연마헤드부(132-3) 및 제2연마헤드부(132-2)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S146).The polishing control unit 164 then moves the head body portion so that the fourth polishing head portion 132-4, the third polishing head portion 132-3, and the second polishing head portion 132-2 move to the initial installation position. The linear movement driving unit 136 is controlled (S146).

한편 연마제어부(164)는 S141 내지 S146 단계가 진행되는 동안 제1연마헤드부(132-1)에 대하여 S111 내지 S114단계를 진행한다.Meanwhile, the polishing control unit 164 performs the steps S111 to S114 with respect to the first polishing head part 132-1 while the steps S141 to S146 are performed.

다음에 연마제어부(164)는 제1연마헤드부(132-1), 제2연마헤드부(132-2), 제3연마헤드부(132-3) 및 제4연마헤드부(132-4)가 세척수분사부(163)의 상측에 도달하도록 헤드지지체회전구동부(134)를 제어한다(S147).Next, the polishing control unit 164 includes a first polishing head portion 132-1, a second polishing head portion 132-2, a third polishing head portion 132-3, and a fourth polishing head portion 132-4. The head support rotation driving unit 134 is controlled to reach the upper side of the washing water spraying unit 163 (S147).

다음에 연마제어부(164)는 세척수분사부(163)로부터 세척수가 분사되도록 세척수분사부(163)를 제어한다(S148).Next, the polishing control unit 164 controls the washing water spraying unit 163 to spray the washing water from the washing water spraying unit 163 (S148).

다음에 연마제어부(164)는 제4연마헤드부(132-4)가 트랜스퍼판(141)의 상측에, 제1연마헤드부(132-1)가 제1연마스테이션(120-1)의 상측에, 제2연마헤드부(132-2)가 제2연마스테이션(120-2)의 상측에, 제3연마헤드부(132-3)가 제3연마스테이션(120-3)의 상측에 배치되도록 헤드지지체회전구동부(134)를 제어한다(S151).Next, in the polishing control unit 164, the fourth polishing head portion 132-4 is above the transfer plate 141, and the first polishing head portion 132-1 is above the first polishing station 120-1. The second polishing head portion 132-2 is disposed above the second polishing station 120-2, and the third polishing head portion 132-3 is disposed above the third polishing station 120-3. The head support rotation drive unit 134 is controlled to be made (S151).

다음에 연마제어부(164)는 제1연마헤드부(132-1), 제2연마헤드부(132-2) 및 제3연마헤드부(132-3)가 웨이퍼연마위치(1연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S152).Next, in the polishing control unit 164, the first polishing head portion 132-1, the second polishing head portion 132-2, and the third polishing head portion 132-3 are disposed at the wafer polishing position (1 polishing pad). The head body non-linear driving unit 136 is controlled to move to the position where the wafer is polished (S152).

다음에 연마제어부(164)는 제1연마헤드부(132-1)에 대응하는 멤브레인에 흡착된 웨이퍼, 제2연마헤드부(132-2)에 대응하는 멤브레인에 흡착된 웨이퍼 및 제3연마헤드부(132-3)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(133)를 제어한다(S153).Next, the polishing control unit 164 includes a wafer adsorbed on the membrane corresponding to the first polishing head portion 132-1, a wafer adsorbed on the membrane corresponding to the second polishing head portion 132-2, and a third polishing head. The membrane suction expansion unit 133 is controlled such that the wafer adsorbed on the membrane corresponding to the unit 132-3 is in pressure contact with the polishing pad (S153).

다음에 연마제어부(164)는 미리 정해진 시간동안 제1연마헤드부(132-1), 제2연마헤드부(132-2), 제3연마헤드부(132-3), 제1연마스테이션(120-1)에 속하는 연마패드, 제2연마스테이션(120-2)에 속하는 연마패드 및 제3연마스테이션(120-3)에 속하는 연마패드가 회전하고, 제1컨디셔너(162-1), 제2컨디셔너(162-2) 및 제3컨디셔너(162-3)가 동작하고 제1슬러리공급부, 제2슬러리공급부 및 제3슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(123), 헤드바디부회전구동부(135), 제1슬러리공급부 및 제1컨디셔너(162-1)를 제어한다(S154).Next, the polishing control unit 164 performs a first polishing head portion 132-1, a second polishing head portion 132-2, a third polishing head portion 132-3, and a first polishing station for a predetermined time. The polishing pad belonging to 120-1), the polishing pad belonging to second polishing station 120-2, and the polishing pad belonging to third polishing station 120-3 are rotated, and the first conditioner 162-1 and the first polishing pad are rotated. The pad support plate rotation driving unit 123 so that the second conditioner 162-2 and the third conditioner 162-3 operate and are stopped after the abrasive slurry is supplied from the first slurry supply unit, the second slurry supply unit, and the third slurry supply unit; The head body rotation driving unit 135, the first slurry supply unit and the first conditioner 162-1 is controlled (S154).

다음에 연마제어부(164)는 제1연마헤드부(132-1)에 대응하는 멤브레인(132b), 제2연마헤드부(132-2)에 대응하는 멤브레인(132b) 및 제3연마헤드부(13232)에 대응하는 멤브레인(132b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(133)를 제어한다(S155).Next, the polishing control unit 164 includes a membrane 132b corresponding to the first polishing head portion 132-1, a membrane 132b corresponding to the second polishing head portion 132-2, and a third polishing head portion ( The membrane suction expansion part 133 is controlled to resorb the wafer to the membrane 132b corresponding to 13232 (S155).

다음에 연마제어부(164)는 제4연마헤드부(132-4), 제3연마헤드부(132-3) 및 제2연마헤드부(132-2)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(136)를 제어한다(S156).The polishing control unit 164 then moves the head body portion so that the fourth polishing head portion 132-4, the third polishing head portion 132-3, and the second polishing head portion 132-2 move to the initial installation position. The linear movement driving unit 136 is controlled (S156).

한편 연마제어부(164)는 S151 내지 S156 단계가 진행되는 동안 다음과 같은 제어동작을 수행한다.Meanwhile, the polishing control unit 164 performs the following control operation while the steps S151 to S156 are performed.

연마제어부(164)는 제4연마헤드부(132-4)에 접근하도록 즉, 웨이퍼전달위치에 트랜스퍼판(141)이 도달하도록 트랜스퍼판직선이동구동부(143)를 제어한다(S161).The polishing control unit 164 controls the transfer plate linear movement driving unit 143 to approach the fourth polishing head portion 132-4, that is, the transfer plate 141 reaches the wafer transfer position (S161).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대응하는 멤브레인에 흡착된 웨이퍼가 웨이퍼인출위치(151b)로 언로딩되도록 웨이퍼교체부(151)의 로딩동작을 제어한다(S162).Next, the polishing control unit 164 controls the loading operation of the wafer replacement unit 151 so that the wafer adsorbed to the membrane corresponding to the fourth polishing head portion 132-4 is unloaded to the wafer withdrawal position 151b ( S162).

다음에 연마제어부(164)는 제4연마헤드부(132-4)에 대하여 S111 내지 S114단계를 진행한다.Next, the polishing control unit 164 proceeds to steps S111 to S114 with respect to the fourth polishing head portion 132-4.

이상 설명한 연마제어부(164)의 연마제어동작은 종래 널리 알려져 있으므로 상세한 설명은 생략하기로 한다.를 갖고 있다.Since the polishing control operation of the polishing control unit 164 described above is widely known in the art, a detailed description thereof will be omitted.

그런데 종래의 화학기계식 웨이퍼연마장치에 따르면, 유지링(132c)의 내표면에 스크래치가 발생하는 경우(출원인의 현장경험의 따르면 유지링을 제작할 때, 유지링 내표면에 대하여 외부충격이 가해질 때, 웨이퍼의 외주면에 있는 스크래치가 연마단계에서 유지링의 내표면에 접촉할 때 스크래치가 발생할 수 있음) 이를 감지할 수단이 없기 때문에 유지링(132c)의 내표면에 발생한 스크래치에 의해 웨이퍼가 손상된다(연마단계에서 유지링의 내표면에 있는 스크래치에 의해 웨이퍼의 외주면에 스크래치가 발생함)는 문제점이 있었다.However, according to the conventional chemical mechanical wafer polishing apparatus, when a scratch occurs on the inner surface of the retaining ring 132c (when manufacturing the retaining ring according to the field experience of the applicant, when an external shock is applied to the inner surface of the retaining ring, Scratch may occur when the scratches on the outer circumferential surface of the wafer come into contact with the inner surface of the retaining ring in the polishing step.) Since there is no means to detect this, the scratches on the inner surface of the retaining ring 132c damage the wafer ( In the polishing step, scratches occur on the outer circumferential surface of the wafer due to scratches on the inner surface of the retaining ring.

따라서 본 발명의 목적은, 유지링의 내표면에 발생한 스크래치에 의해 웨이퍼가 손상되는 것을 방지할 수 있도록 한 화학기계식 웨이퍼연마장치를 제공하는 것이다.It is therefore an object of the present invention to provide a chemical mechanical wafer polishing apparatus capable of preventing the wafer from being damaged by scratches generated on the inner surface of the retaining ring.

상기 목적은, 본 발명에 따라, 지지면을 갖는 베이스지지체와, 상기 베이스지지체에 대하여 회전가능하도록 상기 베이스지지체에 설치된 패드지지판과 상면이 상기 지지면보다 높은 위치에 배치되도록 상기 패드지지판에 설치된 연마패드와 외부로부터의 제어신호에 따라 상기 패드지지판을 회전구동하는 패드지지판회전구동부를 구비한 적어도 하나의 연마스테이션과, 상기 연마패드보다 높은 위치에서 상기 베이스지지체에 대하여 회전할 수 있도록 상기 베이스지지체에 설치된 연마헤드지지체와, 상기 연마헤드지지체에 대하여 회전할 수 있고 상기 지지면을 향해 직선이동할 수 있도록 상기 연마헤드지지체에 설치된 헤드바디부와 상기 헤드바디부의 저면에 결합된 멤브레인과 상기 멤브레인보다 낮은 위치에 배치되도록 상기 헤드바디부의 저면에 결합된 유지링을 갖는 연마헤드부와, 외부로부터의 제어신호에 따라 상기 멤브레인이 상기 연마헤드부를 향해 볼록해지도록 상기 멤브레인에 흡입력을 인가하고 외부로부터의 제어신호에 따라 상기 멤브레인이 상기 지지면을 향해 볼록해지도록 상기 멤브레인에 팽창력을 인가하는 멤브레인흡입팽창부와, 외부로부터의 제어신호에 따라 상기 연마헤드지지체를 회전구동하는 헤드지지체회전구동부와, 외부로부터의 제어신호에 따라 상기 헤드바디부를 상기 연마헤드지지체에 대하여 회전구동하는 헤드바디부회전구동부와, 외부로부터의 제어신호에 따라 상기 헤드바디부를 초기설치위치와 상기 연마패드에 의해 웨이퍼가 연마되는 웨이퍼연마위치 사이로 왕복이동시키는 헤드바디부직선이동구동부와, 상기 지지면에 나란하게 배치되도록 설치되고 상기 지지면으로부터 멀어지는 방향을 따라 직선이동할 수 있도록 상기 베이스지지체에 설치된 트랜스퍼판과 외부로부터의 제어신호에 따라 상기 트랜스퍼판을 초기설치위치와 상기 트랜스퍼판으로부터 상기 헤드바디부로 웨이퍼가 전달되는 웨이퍼전달위치 사이로 왕복이동시키는 트랜스퍼판직선이동구동부를 구비한 트랜스퍼스테이션과, 외부로부터의 제어신호에 따라 상기 트랜스퍼판으로부터 소정의 웨이퍼인출위치로 웨이퍼를 언로딩하고 외부로부터의 제어신호에 따라 소정의 웨이퍼대기위치로부터 상기 트랜스퍼판으로 웨이퍼를 로딩하는 웨이퍼교체부와, 외부로부터의 제어신호에 따라 상기 연마패드의 상면에 연마제슬러리를 공급하는 연마제슬러리공급부와, 상기 웨이퍼대기위치에 있는 웨이퍼가 상기 트랜스퍼판, 상기 멤브레인 및 상기 트랜스퍼판을 순차적으로 거쳐 상기 웨이퍼인출위치로 회수되고, 웨이퍼가 상기 멤브레인에 전달된 상태에서 상기 연마패드에 의해 연마되며 상기 연마패드에 의해 웨이퍼가 연마되고 있는 동안 상기 연마패드에 연마제슬러리가 공급되도록 상기 웨이퍼교체부의 언로딩동작 및 로딩동작, 상기 패드지지판회전구동부의 패드지지판회전동작, 상기 헤드지지체회전구동부의 연마헤드지지체회전동작, 상기 헤드바디부회전구동부의 헤드바디부회전동작, 상기 헤드바디부직선이동구동부의 헤드바디부직선이동동작, 상기 연마제슬러리공급부의 연마제슬러리공급동작 및 상기 트랜스퍼판직선이동구동부의 트랜스퍼판직선이동동작을 제어하는 연마제어부를 갖는 화학기계식 웨이퍼연마장치에 있어서, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링의 내표면에 유지링촬상영역이 설정될 수 있도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 유지링의 내표면을 둘레방향을 따라 연속적으로 촬상하는 촬상카메라와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역을 향해 조명할 수 있도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 유지링촬상영역을 향해 조명하는 조명부와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역을 향해 세정가스를 분사할 수 있도록 상기 베이스지지체에 설치된 유지링세정가스노즐을 가지고 외부로부터의 제어신호에 따라 상기 유지링촬상영역을 향해 세정가스를 분사하는 유지링세정가스분사부와, 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 유지링촬상영역과 상기 촬상카메라의 렌즈 사이에 송풍영역이 설정되도록 상기 베이스지지체에 설치되고 외부로부터의 제어신호에 따라 상기 송풍영역을 향해 송풍하는 송풍부를 포함하고; 상기 연마제어부는 상기 헤드바디부가 상기 트랜스퍼판의 상측에 배치되어 있을 때 상기 웨이퍼교체부의 언로딩동작이 종료되는 언로딩종료시점과 상기 웨이퍼교체부의 로딩동작이 시작되는 로딩개시시점사이에 상기 조명부가 상기 유지링촬상영역을 향해 조명하고 상기 유지링세정가스분사부가 상기 유지링촬상영역을 향해 세정가스를 분사하며 상기 송풍부가 송풍영역을 향해 송풍하도록 상기 조명부의 조명동작, 상기 유지링세정가스분사부의 분사동작 및 상기 송풍부의 송풍동작을 제어하고 상기 조명부에 의한 조명동작, 상기 유지링세정가스분사부에 의한 분사동작 및 상기 송풍부에 의한 송풍동작이 시작된 후 상기 촬상카메라의 촬상동작이 이루어지도록 상기 촬상카메라를 제어하고, 상기 유지링의 내표면에 웨이퍼손상을 일으키는 손상야기스크래치가 발생했다는 것을 나타내는 연마중지신호가 외부로부터 입력될 때 상기 웨이퍼대기위치로부터 상기 트랜스퍼판으로 웨이퍼가 로딩되는 동작이 중지되고 상기 멤브레인에 흡착된 웨이퍼에 대한 연마작업을 진행하고 상기 트랜스퍼판으로부터 상기 웨이퍼인출위치로 연마작업중인 모든 웨이퍼가 순차적으로 언로딩되도록 상기 웨이퍼교체부, 상기 패드지지판회전구동부, 상기 헤드지지체회전구동부, 상기 헤드바디부회전구동부, 상기 헤드바디부직선이동구동부, 상기 연마제슬러리공급부 및 상기 트랜스퍼판직선이동구동부를 제어하고 상기 트랜스퍼판으로부터 상기 웨이퍼인출위치로 연마작업중인 모든 웨이퍼가 언로딩된 후 상기 웨이퍼교체부, 상기 패드지지판회전구동부, 상기 헤드지지체회전구동부, 상기 헤드바디부회전구동부, 상기 헤드바디부직선이동구동부, 상기 연마제슬러리공급부 및 상기 트랜스퍼판직선이동구동부에 대한 제어동작을 중지하는 것을 특징으로 하는 화학기계식 웨이퍼연마장치에 의해 달성한다.The object is, according to the present invention, a base support having a support surface, a pad support plate provided on the base support so as to be rotatable relative to the base support, and a polishing pad provided on the pad support plate such that the upper surface is disposed at a position higher than the support surface. And at least one polishing station including a pad support plate rotating driver for rotating the pad support plate according to a control signal from the outside, and installed on the base support to rotate relative to the base support at a position higher than the polishing pad. A head coupled to the polishing head support, a head body portion provided on the polishing head support and a lower surface of the head body portion so as to rotate relative to the polishing head support and move linearly toward the support surface; To lower the headbody A polishing head having a retaining ring coupled to the polishing head, and applying suction to the membrane so that the membrane becomes convex toward the polishing head according to a control signal from the outside, and the membrane is supported by the control signal from the outside. A membrane suction expansion portion for applying expansion force to the membrane so as to be convex toward the head; a head support rotation driving portion for rotating the polishing head support in response to a control signal from the outside; and the head body portion according to a control signal from the outside. A head body portion for rotating the head body portion for rotational driving with respect to the polishing head support, and a head body portion for reciprocating the head body portion between an initial installation position and a wafer polishing position where the wafer is polished by the polishing pad according to a control signal from the outside. The linear movement drive unit and the support surface to be arranged side by side And transfer the wafer to the head body portion from the transfer plate and the transfer plate in the initial installation position according to a control plate from the outside and the transfer plate installed on the base support so as to linearly move in a direction away from the support surface. A transfer station having a transfer plate linear driving unit for reciprocating between positions, and unloading the wafer from the transfer plate to a predetermined wafer withdrawal position in accordance with a control signal from the outside, and waiting for a predetermined wafer in accordance with a control signal from the outside. A wafer replacement portion for loading a wafer from a position into the transfer plate, an abrasive slurry supply portion for supplying an abrasive slurry to an upper surface of the polishing pad according to a control signal from the outside, and a wafer at the wafer standby position; The member A slurry slurry on the polishing pad while the phosphor and the transfer plate are sequentially recovered to the wafer withdrawal position, polished by the polishing pad while the wafer is transferred to the membrane, and the wafer is polished by the polishing pad. Unloading operation and loading operation of the wafer replacement unit, pad support plate rotation operation of the pad support plate rotation driving unit, polishing head support rotation operation of the head support rotation driving unit, head body rotation operation of the head body rotation driving unit, In the chemical mechanical wafer polishing apparatus having a head body non-linear movement of the head body non-linear movement driving unit, an abrasive slurry supply operation of the abrasive slurry supply unit and a polishing control unit for controlling the transfer plate linear movement of the transfer plate linear movement driving unit. The head body portion of the transfer plate It is installed on the base support so that the retaining ring imaging area can be set on the inner surface of the retaining ring when disposed on the side, and continuously photographs the inner surface of the retaining ring along the circumferential direction according to a control signal from the outside. An imaging camera and the head body are disposed on the base support so as to illuminate the retaining ring photographing area when the head body is disposed above the transfer plate, and illuminates toward the retaining ring photographing area according to a control signal from the outside. And a retaining ring cleaning gas nozzle provided on the base support to spray cleaning gas toward the retaining ring image pickup area when the head unit is disposed above the transfer plate. A retaining ring cleaning gas injection unit for injecting a cleaning gas toward the retaining ring photographing region according to the present invention; When the head body portion is disposed on the upper side of the transfer plate, it is installed on the base support such that a blowing area is set between the retaining ring imaging area and the lens of the imaging camera, and blows toward the blowing area according to a control signal from the outside. It includes a blower; The polishing control unit may include the lighting unit between an unloading end point at which the unloading operation of the wafer replacement unit is terminated and a loading start point at which the loading operation of the wafer replacement unit starts when the head body is disposed above the transfer plate. Illumination of the lighting unit to illuminate the retaining ring photographing area, the retaining ring cleaning gas injection unit sprays cleaning gas toward the retaining ring photographing area, and the blower blows toward the blowing area, and the retaining ring cleaning gas injection unit To control the blowing operation and the blowing operation of the blower, and to perform the imaging operation of the imaging camera after the lighting operation by the illumination unit, the injection operation by the holding ring cleaning gas injection unit, and the blowing operation by the blowing unit are started. Damage to control the imaging camera and cause wafer damage on the inner surface of the retaining ring When the polishing stop signal indicating that the scratch has occurred is input from the outside, the operation of loading the wafer from the wafer standby position to the transfer plate is stopped, and polishing operation on the wafer adsorbed to the membrane is performed. The wafer replacement portion, the pad support plate rotation drive portion, the head support rotation drive portion, the head body portion rotation drive portion, the head body nonlinear movement drive portion, the abrasive so that all wafers being polished to the wafer withdrawal position are sequentially unloaded. The wafer replacement unit, the pad support plate rotation drive unit, the head support rotation drive unit, and the head after controlling the slurry supply unit and the transfer plate linear drive unit and unloading all wafers being polished from the transfer plate to the wafer withdrawal position. Body part rotation drive , Is achieved by the head body portion linear movement drive, wherein the abrasive slurry supply section and the transfer plate linear chemical mechanical wafer, characterized in that to stop the control operation for the mobile drive unit polishing apparatus.

여기서 손상야기스크래치 발생여부를 기계적으로 정확하게 판단할 수 있도록, 상기 촬상카메라의 촬상화면에 기초하여 상기 연마중지신호를 생성하여 상기 연마제어부로 전송하는 촬상화면판독부를 더 포함하고; 상기 촬상카메라는 촬상화면을 상기 촬상화면판독부로 전송하는 것이 바람직하다.The apparatus further includes an imaging screen reading unit configured to generate the polishing stop signal based on the imaging screen of the imaging camera and transmit the polishing stop signal to the polishing control unit so as to mechanically accurately determine whether or not a scratch causing scratch occurs. Preferably, the imaging camera transmits an imaging screen to the imaging screen reading unit.

그리고 손상야기스크래치 발생여부를 용이하게 판단할 수 있도록, 상기 촬상화면판독부는 상기 촬상카메라의 각 촬상화면을 구성하는 각 세로픽셀열에 속하는 세로픽셀들 중 연속되는 복수의 세로픽셀들을 하나의 픽셀판독그룹으로 선택할 때 하나의 픽셀판독그룹에 속하는 세로픽셀이 갖고 있는 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 경우 상기 연마중지신호를 생성하여 상기 연마제어부로 전송하는 것이 바람직하다.In addition, the image capture screen reader may include a plurality of pixel read groups of a plurality of vertical pixels among the vertical pixels belonging to each vertical pixel column constituting each image capture screen of the image pickup camera so as to easily determine whether or not a scratch has occurred. If the difference between the maximum brightness value and the minimum brightness value of the vertical pixels belonging to one pixel reading group is greater than a preset brightness difference reference value, the polishing stop signal is preferably generated and transmitted to the polishing control unit.

또한 손상야기스크래치 발생여부를 정확하게 판단할 수 있도록, 상기 촬상카메라의 각 촬상화면을 구성하는 각 세로픽셀열에 속하는 세로픽셀들 중 연속되는 복수의 세로픽셀들을 하나의 픽셀판독그룹으로 선택할 때 하나의 픽셀판독그룹에 속하는 세로픽셀이 갖고 있는 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖는 세로픽셀열이 존재하고, 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖는 세로픽셀열을 명도요건충족픽셀열이라고 하고 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖지 않는 세로픽셀열을 명도요건불충족픽셀열이라고 하고 상기 명도요건충족픽셀열중 명도요건불충족픽셀열이 이어지는 명도요건충족픽셀열을 단일명도요건충족픽셀열이라고 하고 상기 명도요건충족픽셀열중 다른 명도요건충족픽셀열이 이어지는 경우 연속되는 명도요건충족픽셀열들의 집합을 명도요건충족픽셀군이라고 할 때 연속되는 단일명도요건충족픽셀열 상호간의 이격거리, 연속되는 명도요건충족픽셀군 상호간의 이격거리 및 연속되는 단일명도요건충족픽셀열과 명도요건충족픽셀군 사이의 이격거리 중 적어도 어느 하나가 미리 설정된 이격거리기준범위에 속하는 경우 상기 연마중지신호를 생성하여 상기 연마제어부로 전송하거나 또는 상기 단일명도요건충족픽셀열과 상기 명도요건충족픽셀군의 개수의 합이 미리 설정된 개수기준범위에 속할 때 상기 연마중지신호를 생성하여 상기 연마제어부로 전송하는 것이 바람직하다.In addition, one pixel may be selected when a plurality of consecutive vertical pixels among the vertical pixels belonging to each vertical pixel column constituting each imaging screen of the imaging camera are selected as one pixel reading group so as to accurately determine whether or not a scratch causing scratch occurs. There exists a vertical pixel column having a pixel reading group in which the difference between the maximum brightness value and the minimum brightness value of the vertical pixels belonging to the reading group is larger than the preset brightness difference reference value, and the difference between the maximum brightness value and the minimum brightness value is preset. A vertical pixel column having a pixel reading group larger than the brightness difference reference value is referred to as a pixel satisfying the brightness requirement, and a vertical pixel column having a difference between the maximum brightness value and the minimum brightness value having no pixel reading group larger than the preset brightness difference reference value Lightness requirement that is referred to as an insufficient pixel column, followed by a lightness requirement insufficient pixel column When the pixel column is called a single brightness requirement pixel column and the other brightness requirement pixel columns of the brightness requirement pixel columns are contiguous, a continuous set of brightness requirement fulfillment pixel groups is referred to as a group of brightness requirement fulfillment pixel groups. At least one of the separation distance between the pixel columns, the separation distance between successive brightness intensity satisfying pixel groups, and the separation distance between the successive single brightness satisfaction fulfillment pixel columns and the brightness requirement fulfillment pixel group fall within the preset separation distance reference range. The polishing stop signal is generated when the polishing stop signal is generated and transmitted to the polishing control unit, or the polishing stop signal is generated when the sum of the number of the single brightness requirement satisfying pixel strings and the brightness requirement fulfillment pixel group falls within a preset number reference range. It is desirable to send to.

또한 조명부의 조명에 의해 재연마웨이퍼가 손상되는 것을 방지할 수 있도록, 상기 연마제어부는 재연마웨이퍼가 상기 웨이퍼대기위치로 공급된다는 것을 나타내는 재연마웨이퍼신호가 입력될 때 상기 웨이퍼대기위치에 공급된 재연마웨이퍼가 연마과정을 거친 후 상기 웨이퍼인출위치를 통해 외부로 이송될 때까지 상기 촬상카메라의 촬상동작이 중지되도록 상기 촬상카메라를 제어하는 것이 바람직하다.In addition, the polishing control unit is supplied to the wafer standby position when the regrind wafer signal is input to indicate that the regrind wafer is supplied to the wafer standby position so as to prevent the regrind wafer from being damaged by the illumination of the illumination unit. It is preferable to control the imaging camera so that the imaging operation of the imaging camera is stopped until the regrind wafer is polished and transferred to the outside through the wafer withdrawal position.

또한 재연마웨이퍼를 신속하게 재연마시킬 수 있도록, 상기 연마스테이션은 복수 개이고; 상기 연마제어부는 재연마웨이퍼가 상기 웨이퍼대기위치로 공급된다는 것을 나타내는 재연마웨이퍼신호가 외부로부터 입력될 때 상기 재연마웨이퍼에 대한 웨이퍼연마동작이 상기 연마스테이션 중 어느 일방에 의해서만 이루어지도록 상기 연마스테이션 중 어느 일방에 의해 재연마웨이퍼연마동작이 이루어지도록 상기 패드지지판회전구동부의 패드지지판회전동작, 상기 헤드지지체회전구동부의 연마헤드지지체회전동작, 상기 헤드바디부회전구동부의 헤드바디부회전동작, 상기 헤드바디부직선이동구동부의 헤드바디부직선이동동작 및 상기 연마제슬러리공급부의 연마제슬러리공급동작을 제어하는 것이 바람직하다.Also, in order to be able to quickly regrind the regrind wafer, there are a plurality of polishing stations; The polishing control unit performs a polishing operation on the polishing wafer only by one of the polishing stations when a polishing polishing signal indicating that the polishing polishing wafer is supplied to the wafer standby position is input from the outside. The pad support plate rotation operation of the pad support plate rotation driving unit, the polishing head support rotation operation of the head support rotation driving unit, the head body rotation operation of the head body rotation driving unit, and the polishing operation by the one of the It is preferable to control the head body nonlinear movement of the head body nonlinear movement driving unit and the abrasive slurry supply operation of the abrasive slurry supply unit.

또한 촬상카메라의 촬상화면을 선명하게 할 수 있도록, 상기 촬상카메라를 둘러싸는 방수하우징과, 상기 촬상카메라의 렌즈를 향해 세정가스를 분사할 수 있도록 상기 베이스지지체에 설치된 렌즈세정가스노즐을 가지고 상기 외부로부터의 제어신호에 따라 상기 촬상카메라의 렌즈를 향해 세정가스를 분사하는 렌즈세정가스분사부를 더 포함하고; 상기 연마제어부는 상기 웨이퍼교체부의 언로딩동작이 종료되는 언로딩종료시점이전에 상기 렌즈세정가스분사부가 상기 촬상카메라의 렌즈를 향해 세정가스를 분사하도록 상기 렌즈세정가스분사부의 분사동작을 제어하는 것이 바람직하다.In addition, the outer surface having a waterproof housing surrounding the image pickup camera so as to sharpen the captured image of the image pickup camera, and a lens cleaning gas nozzle installed on the base support to spray cleaning gas toward the lens of the image pickup camera. A lens cleaning gas injection unit for injecting cleaning gas toward the lens of the imaging camera according to a control signal from the camera; The polishing control unit controls the spraying operation of the lens cleaning gas injection unit such that the lens cleaning gas injection unit sprays the cleaning gas toward the lens of the imaging camera before the unloading end point at which the unloading operation of the wafer replacement unit is completed. desirable.

또한 촬상카메라의 촬상화면을 선명하게 할 수 있도록, 상기 촬상카메라를 둘러싸는 방수하우징과, 외부로부터의 제어신호에 따라 상기 방수하우징과 상기 촬상카메라의 사이공간에 결로방지가스를 주입하는 결로방지가스분사부를 더 포함하고; 상기 연마제어부는 상기 방수하우징과 상기 촬상카메라의 사이공간에 결로방지가스를 분사하도록 상기 결로방지가스분사부의 분사동작을 제어하는 것이 바람직하다.Also, a condensation prevention gas for injecting condensation preventing gas into the space between the waterproof housing and the image pickup camera in accordance with a control signal from the outside so as to sharpen the captured image of the image pickup camera. Further comprising a spray; Preferably, the polishing control unit controls the spraying operation of the condensation preventing gas injection unit to inject condensation preventing gas into the space between the waterproof housing and the imaging camera.

따라서 본 발명에 따르면, 유지링의 내표면을 촬상하고 촬상화면에 기초하여 유지링의 내표면에 웨이퍼손상을 일으키는 손상야기스크래치가 발생했는 지 여부를 판단하고 판단결과 손상야기스크래치가 발생한 경우 웨이퍼연마작업을 중지함으로써, 유지링의 내표면에 발생한 스크래치에 의해 웨이퍼가 손상되는 것을 방지할 수 있다.Therefore, according to the present invention, the inner surface of the retaining ring is imaged, and it is judged whether or not the damage causing scratch on the inner surface of the retaining ring has occurred on the inner surface of the retaining ring. By stopping the work, it is possible to prevent the wafer from being damaged by the scratches generated on the inner surface of the retaining ring.

도1은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 결합사시도,
도2는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 요부분해사시도,
도3은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 촬상카메라, 조명부 및 송풍부 영역의 상세도,
도4는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 유지링을 도시한 도면,
도5는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 연마스테이션과 연마헤드부를 도시한 도면,
도6은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 트랜스퍼스테이션과 연마헤드부를 도시한 도면,
도7은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 제어블럭도,
도8은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 연마동작을 설명하기 위한 도면,
도9는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 촬상화면판독부의 동작을 설명하기 위한 도면,
도10은 종래 화학기계식 웨이퍼연마장치의 결합사시도,
도11은 종래 화학기계식 웨이퍼연마장치의 유지링을 도시한 도면,
도12는 종래 화학기계식 웨이퍼연마장치의 연마스테이션과 연마헤드부를 도시한 도면,
도13은 종래 화학기계식 웨이퍼연마장치의 트랜스퍼스테이션과 연마헤드부를 도시한 도면,
도14는 종래 화학기계식 웨이퍼연마장치의 제어블럭도,
도15는 종래 화학기계식 웨이퍼연마장치의 연마동작을 설명하기 위한 도면이다.1 is a perspective view of a combination of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention,
2 is a partially exploded perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
3 is a detailed view of an imaging camera, an illumination unit and a blower region of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
4 is a view showing a retaining ring of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
5 is a view showing a polishing station and a polishing head of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
6 is a view showing a transfer station and a polishing head of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
7 is a control block diagram of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention;
8 is a view for explaining a polishing operation of the chemical mechanical wafer polishing apparatus according to the embodiment of the present invention;
9 is a view for explaining the operation of the image pickup screen reader of the chemical mechanical wafer polishing apparatus according to the embodiment of the present invention;
10 is a perspective view of a combination of a conventional chemical mechanical wafer polishing apparatus,
11 is a view showing a retaining ring of a conventional chemical mechanical wafer polishing apparatus;
12 is a view showing a polishing station and a polishing head portion of a conventional chemical mechanical wafer polishing apparatus;
13 is a view showing a transfer station and a polishing head of a conventional chemical mechanical wafer polishing apparatus;
14 is a control block diagram of a conventional chemical mechanical wafer polishing apparatus,
15 is a view for explaining a polishing operation of a conventional chemical mechanical wafer polishing apparatus.

이하에서, 첨부도면을 참조하여 본 발명을 상세히 설명하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

도1은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 결합사시도이고, 도2는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 요부분해사시도이고, 도3은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 촬상카메라, 조명부 및 송풍부 영역의 상세도이고, 도4는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 유지링을 도시한 도면이고, 도5는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 연마스테이션과 연마헤드부를 도시한 도면이고, 도6은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 트랜스퍼스테이션과 연마헤드부를 도시한 도면이고, 도7은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 제어블럭도이고, 도8은 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 연마동작을 설명하기 위한 도면이고, 도9는 본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치의 촬상화면판독부의 동작을 설명하기 위한 도면이다.1 is a combined perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, Figure 2 is a partial perspective view of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, Figure 3 is an embodiment of the present invention Figure 4 is a detailed view of the imaging camera, the illumination unit and the blower region of the chemical mechanical wafer polishing apparatus according to the present invention, Figure 4 is a view showing a retaining ring of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, Figure 5 6 is a view showing a polishing station and a polishing head portion of a chemical mechanical wafer polishing apparatus according to an embodiment, and FIG. 6 is a view showing a transfer station and a polishing head portion of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, and FIG. Is a control block diagram of a chemical mechanical wafer polishing apparatus according to an embodiment of the present invention, Figure 8 illustrates a polishing operation of the chemical mechanical wafer polishing apparatus according to an embodiment of the present invention. A diagram for FIG. 9 is a view for explaining the image sensing screen portion read operation of the chemical mechanical wafer polishing apparatus according to an embodiment of the invention.

본 발명의 실시예에 따른 화학기계식 웨이퍼연마장치는, 이들 도면에 도시된 바와 같이, 지지면(11a)을 갖는 베이스지지체(11)와, 각각 베이스지지체(11)에 설치된 패드지지판(21)을 구비한 3개의 연마스테이션(20)과, 각각 베이스지지체(11)에 설치된 연마헤드지지체(31)와, 연마헤드지지체(31)에 설치된 헤드바디부(32a)를 구비한 4개의 연마헤드부(32)와, 연마헤드부(32)를 구동하는 멤브레인흡입팽창부(33), 헤드지지체회전구동부(34), 헤드바디부회전구동부(35) 및 헤드바디부직선이동구동부(36)와, 베이스지지체(11)에 설치된 트랜스퍼판(41)을 구비한 트랜스퍼스테이션(40)과, 웨이퍼를 트랜스퍼판(41)으로 로딩(Loading)하거나 트랜스퍼판(41)으로부터 웨이퍼를 언로딩(Unloading)하는 웨이퍼교체부(51)와, 후술하는 연마패드(22)의 상면에 연마제슬러리를 공급하는 연마제슬러리공급부(52)와, 베이스지지체(11)에 설치된 촬상카메라(53) 및 조명부(54)와, 촬상카메라(53)를 둘러싸는 방수하우징(55)과, 베이스지지체(11)에 설치된 유지링세정가스노즐(56a)을 구비한 유지링세정가스분사부(56)와, 베이스지지체(11)에 설치된 송풍부(57)와, 촬상카메라(53)의 촬상화면을 판독하는 촬상화면판독부(58)와, 베이스지지체(11)에 설치된 렌즈세정가스노즐(59a)을 구비한 렌즈세정가스분사부(59)와, 방수하우징(55)과 촬상카메라(53)의 사이공간에 결로방지가스를 주입하는 결로방지가스분사부(61)와, 베이스지지체(11)에 설치된 컨디셔너(62) 및 세척수분사부(63)와, 전체 연마공정을 제어하는 연마제어부(64)를 갖고 있다.In the chemical mechanical wafer polishing apparatus according to the embodiment of the present invention, as shown in these figures, the base support body 11 having the support surface 11a, and the pad support plate 21 provided in the base support body 11, respectively. Four polishing head portions each having three polishing stations 20, a polishing head support 31 provided on the base support 11, and a head body portion 32a provided on the polishing head support 31, 32, a membrane suction expansion portion 33 for driving the polishing head portion 32, a head support rotation drive portion 34, a head body rotation drive portion 35 and a head body non-linear movement drive portion 36, and a base Transfer station 40 having a transfer plate 41 provided on the support 11 and a wafer replacement for loading the wafer into the transfer plate 41 or unloading the wafer from the transfer plate 41. An abrasive for supplying an abrasive slurry to the upper portion of the portion 51 and the polishing pad 22 described later. The slurry supply unit 52, the imaging camera 53 and the lighting unit 54 installed on the base support 11, the waterproof housing 55 surrounding the imaging camera 53, and the retaining ring installed on the base support 11. A holding ring cleaning gas injection unit 56 having a cleaning gas nozzle 56a, a blower unit 57 provided on the base support 11, and an image pickup screen reader unit for reading the captured image of the imaging camera 53; Condensation-preventing gas in the space between the lens cleaning gas injection unit 59 provided with the lens cleaning gas nozzle 59a provided in the base support 11, and the waterproof housing 55 and the imaging camera 53. The condensation preventing gas injection part 61 to be injected, the conditioner 62 and the washing water injection part 63 provided in the base support 11, and the polishing control part 64 which controls the whole grinding process are provided.

베이스지지체(11)는 도시되지 않은 커버에 의해 둘러싸여 있다.The base support 11 is surrounded by a cover not shown.

각 연마스테이션(20)은 패드지지판(21)에 더하여 패드지지판(21)에 설치된 연마패드(22)와, 연마제어부(64)로부터의 제어신호에 따라 패드지지판(21)을 회전구동하는 패드지지판회전구동부(23)를 갖고 있다.Each polishing station 20 includes, in addition to the pad support plate 21, a polishing pad 22 provided on the pad support plate 21, and a pad support plate for rotationally driving the pad support plate 21 according to a control signal from the polishing control unit 64. It has a rotation drive part 23.

연마패드(22)는 상면이 지지면(11a)보다 높은 위치에 배치되도록 패드지지판(21)에 설치된다.The polishing pad 22 is provided on the pad support plate 21 so that the upper surface is disposed at a position higher than the support surface 11a.

패드지지판회전구동부(23)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The pad support plate rotation driving unit 23 may be implemented using a rotation driving mechanism such as a motor as is widely known in the art.

연마헤드지지체(31)는 십자형태로 구성되어 있고, 연마패드(22)보다 높은 위치에서 베이스지지체(11)에 대하여 회전할 수 있도록 베이스지지체(11)에 설치된다.The polishing head support 31 has a cross shape and is provided on the base support 11 so as to be able to rotate relative to the base support 11 at a position higher than the polishing pad 22.

각 연마헤드부(32)는 헤드바디부(32a)에 더하여 헤드바디부(32a)의 저면에 결합된 멤브레인(32b)과, 헤드바디부(32a)의 저면에 결합된 유지링(32c)을 갖고 있다.Each polishing head 32 has a membrane 32b coupled to the bottom of the head body 32a in addition to the head body 32a, and a retaining ring 32c coupled to the bottom of the head body 32a. Have

헤드바디부(32a)는 연마헤드지지체(31)에 대하여 회전할 수 있고 지지면(11a)을 향해 직선이동할 수 있도록 연마헤드지지체(31)에 설치된다.The head body portion 32a is provided on the polishing head support 31 so as to be able to rotate with respect to the polishing head support 31 and to move linearly toward the support surface 11a.

유지링(32c)은 멤브레인(32b)보다 낮은 위치에 배치되도록 헤드바디부(32a)의 저면에 결합된다.The retaining ring 32c is coupled to the bottom of the head body portion 32a so as to be positioned at a lower position than the membrane 32b.

멤브레인흡입팽창부(33)는 연마제어부(64)로부터의 제어신호에 따라 진공압을 이용하여 멤브레인(32b)이 연마헤드부(32)를 향해 볼록해지도록 멤브레인(32b)에 흡입력을 인가하고, 연마제어부(64)로부터의 제어신호에 따라 멤브레인(32b)이 지지면(11a)을 향해 볼록해지도록 멤브레인(32b)에 팽창력을 인가한다. 이러한 기능을 수행하는 멤브레인흡입팽창부(33)는 종래 널리 사용되고 있으므로 상세한 설명을 생략하기로 한다.The membrane suction expansion portion 33 applies a suction force to the membrane 32b so that the membrane 32b is convex toward the polishing head portion 32 using a vacuum pressure according to a control signal from the polishing control portion 64, In accordance with a control signal from the polishing control unit 64, an expansion force is applied to the membrane 32b so that the membrane 32b is convex toward the support surface 11a. Membrane suction expansion unit 33 performing this function is widely used in the prior art, so a detailed description thereof will be omitted.

헤드지지체회전구동부(34)는 연마제어부(64)로부터의 제어신호에 따라 연마헤드지지체(31)를 회전구동한다.The head support rotation driving unit 34 rotates the polishing head support 31 in accordance with a control signal from the polishing control unit 64.

이러한 구성을 갖는 헤드지지체회전구동부(34)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The head support rotary drive unit 34 having such a configuration can be implemented using a rotary drive mechanism such as a motor as is widely known in the art.

헤드바디부회전구동부(35)는 연마제어부(64)로부터의 제어신호에 따라 헤드바디부(32a)를 연마헤드지지체(31)에 대하여 회전구동한다.The head body rotating driver 35 rotates the head body 32a with respect to the polishing head support 31 in accordance with a control signal from the polishing control unit 64.

이러한 구성을 갖는 헤드바디부회전구동부(35)는 종래 널리 알려진 바와 같이 모터 등과 같은 회전구동기구를 사용하여 구현할 수 있다.The head body rotary drive unit 35 having such a configuration can be implemented using a rotary drive mechanism such as a motor as is widely known in the art.

헤드바디부직선이동구동부(36)는 연마제어부(64)로부터의 제어신호에 따라 헤드바디부(32a)를 초기설치위치와 연마패드(22)에 의해 웨이퍼가 연마되는 웨이퍼연마위치 사이로 왕복이동시킨다.The head body non-linear drive unit 36 reciprocates the head body 32a between the initial installation position and the wafer polishing position at which the wafer is polished by the polishing pad 22 according to a control signal from the polishing control unit 64. .

이러한 구성을 갖는 헤드바디부직선이동구동부(36)는 종래 널리 알려진 바와 같이 유압실린더 등과 같은 직선구동기구를 사용하여 구현할 수 있다.The head body nonlinear linear driving unit 36 having such a configuration can be implemented using a linear driving mechanism such as a hydraulic cylinder as is widely known in the art.

트랜스퍼스테이션(40)은 베이스지지체(11)에 설치된 트랜스퍼판(41)과, 트랜스퍼판(41)을 지지하는 안착컵(42)과, 트랜스퍼판(41)을 왕복이동시키는 트랜스퍼판직선이동구동부(43)를 갖고 있다.The transfer station 40 includes a transfer plate 41 provided on the base support 11, a seating cup 42 supporting the transfer plate 41, and a transfer plate linear driving unit for reciprocating the transfer plate 41. 43).

트랜스퍼판(41)은 지지면(11a)에 나란하게 배치되도록 설치되어 있다.The transfer plate 41 is provided to be arranged side by side on the support surface 11a.

이러한 구성을 갖는 트랜스퍼판(41)은 지지면(11a)으로부터 멀어지는 방향을 따라 직선이동할 수 있게 된다.The transfer plate 41 having such a configuration can move linearly along the direction away from the support surface 11a.

트랜스퍼판직선이동구동부(43)는 외부로부터의 제어신호에 따라 트랜스퍼판(41)을 초기설치위치와 트랜스퍼판(41)으로부터 헤드바디부(32a)로 웨이퍼가 전달되는 웨이퍼전달위치 사이로 왕복이동시킬 수 있게 된다.The transfer plate linear drive unit 43 reciprocates the transfer plate 41 between the initial installation position and the wafer transfer position from which the wafer is transferred from the transfer plate 41 to the head body 32a according to a control signal from the outside. It becomes possible.

이러한 구성을 갖는 트랜스퍼판직선이동구동부(43)는 종래 널리 알려진 바와 같이 유압실린더 등과 같은 직선구동기구를 사용하여 구현할 수 있다.The transfer plate linear moving unit 43 having such a configuration can be implemented using a linear driving mechanism such as a hydraulic cylinder as is widely known in the art.

웨이퍼교체부(51)는 종래 널리 알려진 바와 같이 로봇기구를 사용하여 구현할 수 있다.The wafer replacement unit 51 may be implemented using a robot mechanism as is widely known in the art.

웨이퍼교체부(51)는 연마제어부(64)로부터의 제어신호에 따라 트랜스퍼판(41)으로부터 소정의 웨이퍼인출위치(51b)로 웨이퍼를 언로딩(Unloading)하고, 연마제어부(64)로부터의 제어신호에 따라 소정의 웨이퍼대기위치(51a)로부터 트랜스퍼판(41)으로 웨이퍼를 로딩(Loading)하도록 동작한다.The wafer replacement unit 51 unloads the wafer from the transfer plate 41 to the predetermined wafer withdrawal position 51b in accordance with a control signal from the polishing control unit 64, and controls the polishing control unit 64. The wafer is loaded from the predetermined wafer standby position 51a into the transfer plate 41 in accordance with the signal.

연마제슬러리공급부(52)는 종래 널리 알려진 바와 같이 연마제어부(64)로부터의 제어신호에 따라 연마패드(22)의 상면에 연마제슬러리를 공급한다.The abrasive slurry supply unit 52 supplies the abrasive slurry to the upper surface of the polishing pad 22 according to a control signal from the polishing control unit 64 as is widely known in the art.

촬상카메라(53)는 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 유지링(32c)의 내표면을 렌즈가 향하도록 베이스지지체(11)에 설치된다. The imaging camera 53 is provided on the base support 11 so that the lens faces the inner surface of the retaining ring 32c when the head body 32a is disposed above the transfer plate 41.

이에 따라 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 유지링(32c)의 내표면에 유지링촬상영역이 설정된다.As a result, the holding ring imaging area is set on the inner surface of the holding ring 32c when the head body 32a is disposed above the transfer plate 41.

그리고 촬상카메라(53)는 연마제어부(64)로부터의 제어신호에 따라 유지링(32c)의 내표면을 촬상하고, 촬상화면을 촬상화면판독부(58)로 전송하도록 동작한다.The imaging camera 53 operates to image the inner surface of the retaining ring 32c in accordance with a control signal from the polishing control unit 64 and to transmit the captured image to the captured image reading unit 58.

조명부(54)는 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 유지링촬상영역을 향해 조명할 수 있도록 베이스지지체(11)에 설치된다.The lighting unit 54 is provided on the base support 11 so that the head body 32a can be illuminated toward the retaining ring image pickup area when the head body 32a is disposed above the transfer plate 41.

그리고 조명부(54)는 웨이퍼 표면 산화량을 감소시킬 수 있도록 노란색(파장 550 ~ 600㎚) 빛을 조명할 수 있도록 구성하는 것이 바람직하다.In addition, the lighting unit 54 is preferably configured to illuminate yellow (wavelength 550 ~ 600nm) light to reduce the amount of oxidation of the wafer surface.

노란색(파장 550 ~ 600㎚) 엘이디(LED)는 광량이 적기 때문에 백색 엘이디(LED)에 노란색 렌즈를 장착함으로써 고광량의 노란색(파장 550 ~ 600㎚) 빛을 조명할 수 있다.Yellow (LED 550 ~ 600nm) LED (LED) has a small amount of light, so by attaching a yellow lens to the white LED (LED) it is possible to illuminate high-light yellow (wavelength 550 ~ 600nm) light.

엘이디(LED)는 종래 알려진바와 같이 엘이디(LED)구동회로에 의해 구동되며, 엘이디(LED)구동회로는 연마제어부(64)로부터의 제어신호에 따라 엘이디(LED)를 발광시켜 유지링촬상영역을 향해 조명하게 된다.As the LED is conventionally known, the LED is driven by the LED driving circuit, and the LED driving circuit emits the LED according to a control signal from the polishing control unit 64 to maintain the holding ring imaging area. Will be illuminated.

방수하우징(55)은 투명창을 형성하는 방법 등으로 촬상카메라(53)의 렌즈가 노출되도록(즉, 방수하우징에 의해 촬상카메라의 촬상동작이 방해받지 않도록) 설치된다.The waterproof housing 55 is installed such that the lens of the imaging camera 53 is exposed (that is, the imaging operation of the imaging camera is not disturbed by the waterproof housing) by a method of forming a transparent window or the like.

그리고 방수하우징(55)은 가압포트(55a)와 배출포트(55b)를 갖고 있다.The waterproof housing 55 has a pressurizing port 55a and a discharge port 55b.

유지링세정가스분사부(56)는 종래 널리 알려진 바와 같이 질소가스가 저장된 질소가스탱크와, 질소가스탱크에 배관을 통해 연결된 유지링세정가스노즐(56a)과, 질소가스탱크와 유지링세정가스노즐(56a) 사이에 설치된 전자식 개폐밸브를 사용하여 구현할 수 있다.The retaining ring cleaning gas injection unit 56 is a nitrogen gas tank in which nitrogen gas is stored, a retaining ring cleaning gas nozzle 56a connected to a nitrogen gas tank through a pipe, and a nitrogen gas tank and a retaining ring cleaning gas, as is widely known. It can be implemented using an electronic on-off valve installed between the nozzles (56a).

유지링세정가스노즐(56a)은 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 유지링촬상영역을 향해 세정가스를 분사할 수 있도록 베이스지지체(11)에 설치된다.The retaining ring cleaning gas nozzle 56a is provided in the base support 11 so that the cleaning gas can be injected toward the retaining ring image pickup area when the head body 32a is disposed above the transfer plate 41.

이러한 구성을 갖는 유지링세정가스분사부(56)는 연마제어부(64)로부터의 제어신호에 따라 유지링촬상영역을 향해 세정가스를 분사한다.The retaining ring cleaning gas injection unit 56 having this configuration injects a cleaning gas toward the retaining ring image pickup area in accordance with a control signal from the polishing control unit 64.

송풍부(57)는 종래 알려진 바와 같이 송풍팬과, 송풍팬을 회전구동하는 팬모터와, 팬모터와 전원부 사이를 개폐하는 모터전원스위칭부를 갖고 있다. The blower 57 has a blower fan, a fan motor for rotationally driving the blower fan, and a motor power switching unit for opening and closing the fan motor and the power supply unit, as known in the related art.

송풍팬은 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 유지링촬상영역과 촬상카메라(53)의 렌즈 사이에 송풍영역이 설정되도록 베이스지지체(11)에 설치된다.The blowing fan is provided in the base support 11 so that the blowing area is set between the retaining ring photographing area and the lens of the imaging camera 53 when the head body 32a is disposed above the transfer plate 41.

이러한 구성을 갖는 송풍부(57)는 모터전원스위칭부가 연마제어부로부터의 제어신호에 따라 온상태가 될 때 송풍팬이 회전하여 송풍영역을 향해 송풍할 수 있게 된다.The blower 57 having such a configuration allows the blower fan to rotate and blow toward the blower area when the motor power switching unit is turned on according to a control signal from the polishing controller.

촬상화면판독부(58)는 촬상카메라(53)의 촬상화면에 기초하여 연마중지신호를 생성하여 연마제어부(64)로 전송한다.The imaging screen reader 58 generates a polishing stop signal based on the imaging screen of the imaging camera 53 and transmits the polishing stop signal to the polishing controller 64.

여기서 연마중지신호를 생성하는 방법을 설명하면 다음과 같다. 이하 설명의 편의를 위해 각 촬상화면의 픽셀은 20(세로픽셀수) × 100 (가로픽셀수)이라고 하고, 첫번째 세로픽셀열의 픽셀을 P1-1, P1-2, P1-3, P1-4, P1-5, P1-6, P1-7, P1-8, P1-9, P1-10, P1-11, P1-12, P1-13, P1-14, P1-15, P1-16, P1-17, P1-18, P1-19, P1-20이라고 한다. P1-1에서 앞 "1"은 세로픽셀열의 순서를 나타내고, 뒤 "1"은 각 세로픽셀열에 속하는 세로픽셀의 순서를 나타낸다. 그리고 설명의 편의를 위해 첫번째 세로픽셀열에 속하는 픽셀의 명도는 각각 P1-1=95, P1-2=80, P1-3=90, P1-4=100, P1-5=135, P1-6=145, P1-7=155, P1-8=140, P1-9=130, P1-10=120, P1-11=80, P1-12=90, P1-13=110, P1-14=150, P1-15=120, P1-16=130, P1-17=80, P1-18=90, P1-19=120, P1-20=150(여기서 195, 280 등은 명도를 256단계로 표현할 때 명도를 나타내는 값을 각각 의미함)이고, 명도차기준값은 50(여기서 50은 명도를 256단계로 표현할 때 명도차를 나타내는 값을 의미함)이라고 가정한다.Here, the method of generating the polishing stop signal is as follows. For convenience of explanation, the pixels of each image pickup screen are 20 (the number of vertical pixels) × 100 (the number of horizontal pixels), and the pixels of the first vertical pixel column are P1-1, P1-2, P1-3, P1-4, P1-5, P1-6, P1-7, P1-8, P1-9, P1-10, P1-11, P1-12, P1-13, P1-14, P1-15, P1-16, P1- 17, P1-18, P1-19, and P1-20. In P1-1, the first " 1 " indicates the order of the vertical pixel columns, and the " 1 " indicates the order of the vertical pixels belonging to each vertical pixel column. For the convenience of explanation, the brightness of the pixels belonging to the first vertical pixel column is P1-1 = 95, P1-2 = 80, P1-3 = 90, P1-4 = 100, P1-5 = 135, P1-6 = 145, P1-7 = 155, P1-8 = 140, P1-9 = 130, P1-10 = 120, P1-11 = 80, P1-12 = 90, P1-13 = 110, P1-14 = 150, P1-15 = 120, P1-16 = 130, P1-17 = 80, P1-18 = 90, P1-19 = 120, P1-20 = 150 (where 195, 280, etc., the brightness is expressed in 256 steps) It is assumed that each value represents a value of, and the brightness difference reference value is 50 (where 50 represents a value representing the difference in brightness when the brightness is expressed in 256 steps).

또한 미리 설정된 이격거리기준범위는 20 내지 30이라고 한다. 여기서 60과 70은 각각 가로픽셀수를 의미한다.In addition, the preset separation distance reference range is 20 to 30. Where 60 and 70 are horizontal pixels.

먼저 촬상화면판독부(58)는 첫 번째 세로픽셀열중 앞에서부터 시작하여 연속되는 4개의 픽셀을 첫 번째 픽셀판독그룹 (P1-1, P1-2, P1-3, P1-4)으로 선택한다.First, the captured image reading unit 58 selects four consecutive pixels starting from the front of the first vertical pixel column as the first pixel reading groups P1-1, P1-2, P1-3, and P1-4.

다음에 촬상화면판독부(58)는 첫 번째 픽셀판독그룹 (P1-1, P1-2, P1-3, P1-4) 최대명도값과 최소명도값의 차이(30)를 산출한 다음 명도차기준값 50과 비교한다.Next, the image capture screen reader 58 calculates the difference 30 between the maximum and minimum brightness values of the first pixel reading groups P1-1, P1-2, P1-3, and P1-4. Compare with reference value 50.

다음에 촬상화면판독부(58)는 첫 번째 픽셀판독그룹 (P1-1, P1-2, P1-3, P1-4)의 최대명도값과 최소명도값의 차이(30)가 명도차기준값보다 크지 않으므로 다음 픽셀판독그룹 (P1-2, P1-3, P1-4, P1-5)을 선택한다.Next, the image pickup screen reader 58 determines that the difference 30 between the maximum brightness value and the minimum brightness value of the first pixel reading group P1-1, P1-2, P1-3, P1-4 is greater than the brightness difference reference value. Since it is not large, select the next pixel read group (P1-2, P1-3, P1-4, P1-5).

다음에 촬상화면판독부(58)는 두번째 픽셀판독그룹 (P1-2, P1-3, P1-4, P1-5)의 최대명도값과 최소명도값의 차이(70)를 산출하여 명도차기준값(50)과 비교한다.Next, the image capturing screen reading unit 58 calculates a difference 70 between the maximum brightness value and the minimum brightness value of the second pixel reading groups P1-2, P1-3, P1-4, and P1-5 to determine the brightness difference reference value. Compare with (50).

다음에 촬상화면판독부(58)는 두번째 픽셀판독그룹 (P1-2, P1-3, P1-4, P1-5)의 최대명도값과 최소명도값의 차이(70)가 명도차기준값보다 크므로 첫번째 세로픽셀열을 명도요건충족열에 해당하는 것으로 판단한다.Next, the image pickup screen reader 58 determines that the difference 70 between the maximum brightness value and the minimum brightness value of the second pixel reading groups P1-2, P1-3, P1-4, and P1-5 is greater than the brightness difference reference value. Therefore, the first vertical pixel column corresponds to the column satisfying the brightness requirements.

다음에 촬상화면판독부(58)는 두번째 세로픽셀열에서 100번째 세로픽셀열에 대하여 전술한 바와 같이 명도요건충족열에 해당하는 지 여부를 판단한다.Next, the image capturing screen reader 58 determines whether or not the image satisfies the brightness requirement string as described above with respect to the 100th vertical pixel column from the second vertical pixel column.

그리고 촬상화면판독부(58)는 명도요건충족열의 판단결과를 다음과 분류한다.The image capturing screen reading unit 58 classifies the determination result of the lightness requirement satisfying fever as follows.

즉, 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖지 않는 세로픽셀열을 명도요건불충족픽셀열(도9의 "C" 참조, "C"는 각 세로픽셀에 대한 것임)이라고 하고, 명도요건충족픽셀열중 명도요건불충족픽셀열이 다음에 이어지는 명도요건충족픽셀열을 단일명도요건충족픽셀열(도9의 "B" 참조), 명도요건충족픽셀열중 다른 명도요건충족픽셀열이 이어지는 경우 연속되는 명도요건충족픽셀열들의 집합을 명도요건충족픽셀군(도9의 "A" 참조)이라고 한다.That is, a pixel column that does not have a pixel reading group whose difference between the maximum brightness value and the minimum brightness value does not have a pixel reading group larger than a preset brightness difference reference value (see "C" in FIG. 9, "C" denotes a vertical length). Pixels), and the brightness requirement fulfillment pixel column followed by the brightness requirement fulfillment pixel column is followed by the brightness requirement fulfillment pixel column (see "B" in FIG. 9), and the brightness requirement fulfillment pixel column. In the case where other lightness satisfying pixel columns are contiguous, a set of consecutive lightness requirement pixel rows is referred to as a lightness requirement pixel group (see "A" in FIG. 9).

도9를 참조하면 단일명도요건충족픽셀열은 1개가 되고, 명도요건충족픽셀군은 3개가 된다.Referring to Fig. 9, there is one single brightness requirement satisfying pixel column, and there are three brightness requirement satisfying pixel groups.

다음에 촬상화면판독부(58)는 연속되는 단일명도요건충족픽셀열 상호간의 이격거리, 연속되는 명도요건충족픽셀군 상호간의 이격거리 및 연속되는 단일명도요건충족픽셀열과 명도요건충족픽셀군 사이의 이격거리를 가로픽셀수로 산출한다.Then, the image capturing screen reading unit 58 separates the spaces between successive single brightness requirement pixel groups, the spaces between successive light intensity requirement pixel groups, and between the continuous light intensity requirements pixel groups and the lightness requirement pixel groups. The separation distance is calculated as the number of horizontal pixels.

다음에 촬상화면판독부(58)는 이격거리기준범위(20 내지 30)와 비교하여 연속되는 단일명도요건충족픽셀열 상호간의 이격거리, 연속되는 명도요건충족픽셀군 상호간의 이격거리 및 연속되는 단일명도요건충족픽셀열과 명도요건충족픽셀군 사이의 이격거리중 어느 하나가 이격거리기준범위(20 내지 30)에 속하는 지 여부를 판단한다.Next, the image capturing screen reading unit 58 compares the distances between successive single brightness requirements satisfying pixel strings, the distances between successive brightness intensity satisfying pixel groups compared to the distance reference ranges 20 to 30, and the continuous singles. It is determined whether any one of the separation distances between the lightness requirement pixel array and the lightness requirement pixel group belongs to the separation distance reference range 20 to 30.

마지막으로 촬상화면판독부(58)는 명도요건충족열에 해당하는 세로픽셀열이 존재하고, 이격거리 중 어느 하나가 이격거리기준범위(20 내지 30)에 속하므로(본 실시예에서는 모두가 이격거리기준범위에 속함) 연마중지신호를 생성하여 연마제어부(64)로 전송한다.Finally, since the image pickup screen reader 58 has a vertical pixel column corresponding to the brightness requirement fulfillment column, and any one of the separation distances belongs to the separation distance reference range 20 to 30 (in this embodiment, all of them are based on the separation distance). And a polishing stop signal is generated and transmitted to the polishing control unit 64.

한편 전술한 연마중지신호를 생성하는 데 사용되는 명도차기준값은 다음과 같은 방법으로 설정할 수 있다.Meanwhile, the brightness difference reference value used to generate the above-described polishing stop signal may be set in the following manner.

먼저 명도차기준값에 대한 명도차기준값을 임의로 설정한다.First, the brightness difference reference value is arbitrarily set to the brightness difference reference value.

다음에 임의로 설정한 명도차기준값을 가지고 명도요건충족열을 판단하고 명도요건충족열에 해당하는 세로픽셀열이 존재하는 경우 유지링(32c)의 내표면에 형성된 스크래치에 의해 웨이퍼에 인용가능하지 않은 손상을 초래하는 지 여부를 판단한다(S81).Next, the lightness requirement string is judged based on the lightness difference reference value set arbitrarily, and if there is a vertical pixel string corresponding to the lightness string, the scratches formed on the inner surface of the retaining ring 32c may cause damage to the wafer that cannot be cited. It is determined whether to cause (S81).

판단결과 유지링(32c)의 내표면에 형성된 스크래치에 의해 웨이퍼에 인용가능하지 않은 손상이 초래하는 경우 보다 낮은 명도차기준값을 다시 설정하여 S81단계를 실시한다(S82).As a result of determination, when the scratch formed on the inner surface of the retaining ring 32c causes unquotable damage to the wafer, a lower brightness difference reference value is set again to perform step S81 (S82).

S82단계를 반복 실시하여 임의로 설정한 명도차기준값 중 유지링(32c)의 내표면에 형성된 스크래치에 의해 웨이퍼에 인용가능하지 않은 손상이 초래하는 가장 작은 임의 설정명도차기준값을 최종적으로 명도차기준값으로 선택한다.Repeatedly performing the step S82, among the randomly set brightness difference reference values, the smallest set brightness difference reference value, which is caused by the scratches formed on the inner surface of the retaining ring 32c, which is not quoted on the wafer, is finally obtained as the brightness difference reference value. Choose.

한편 판단결과 유지링(32c)의 내표면에 형성된 스크래치에 의해 웨이퍼에 인용가능하지 않은 손상이 초래하지 않는 경우 1차명도차기준값보다 높은 값을 다시 설정하여 S81단계를 실시한다(S83).On the other hand, if it is determined that the scratches formed on the inner surface of the retaining ring 32c do not cause unquotable damage to the wafer, a value higher than the primary brightness difference reference value is set again to perform step S81 (S83).

S83단계를 반복 실시하여 임의로 설정한 명도차기준값 중 유지링(32c)의 내표면에 형성된 스크래치에 의해 웨이퍼에 인용가능하지 않은 손상이 초래되는 임의 설정 명도차기준값을 최종적으로 명도차기준값으로 선택한다.Step S83 is repeated to finally select a brightness difference reference value, among which the brightness difference reference value is arbitrarily set, such that a scratch formed on the inner surface of the retaining ring 32c causes unquotable damage to the wafer. .

그리고 연마중지신호를 생성하는 데 사용되는 이격거리기준범위는 다음과 같은 방법으로 설정할 수 있다. And the separation distance reference range used to generate the polishing stop signal can be set as follows.

먼저 전술한 바와 같이 설정된 명도차기준값에 따라 연마중지신호가 생성될 때 연마과정에서 스크래치가 형성된 웨이퍼에 의해 유지링(32c)의 내표면에 형성된 스크래치 사이의 이격거리를 실측한다.First, when the polishing stop signal is generated according to the brightness difference reference value set as described above, the separation distance between the scratches formed on the inner surface of the retaining ring 32c by the wafer on which the scratches are formed during the polishing process is measured.

다음에 실측한 이격거리에 오차를 반영하여 이격거리기준범위를 설정한다.Next, the separation distance reference range is set by reflecting an error in the measured separation distance.

렌즈세정가스분사부(59)는 질소가스가 저장된 질소가스탱크와, 질소가스탱크에 배관을 통해 연결된 렌즈세정가스노즐(59a)과, 질소가스탱크와 렌즈세정가스노즐(59a) 사이에 설치된 전자식 개폐밸브를 사용하여 구현할 수 있다. The lens cleaning gas injection unit 59 is an electronic gas installed between the nitrogen gas tank in which nitrogen gas is stored, the lens cleaning gas nozzle 59a connected to the nitrogen gas tank via a pipe, and the nitrogen gas tank and the lens cleaning gas nozzle 59a. It can be implemented using an on / off valve.

결로방지가스분사부(61)는 질소가스가 저장되어 있고 가압포트(55a)와 배출포트(55b)에 배관을 통해 연결된 질소가스탱크와, 가압포트(55a)와 질소가스탱크 사이에 설치된 전자식 개폐밸브를 사용하여, 가압상태의 결로방지가스(질소가스)를 가압포트(55a)를 통해 주입하고 배출포트(55b)를 통해 회수하는 방법으로 구현할 수 있다.Condensation prevention gas injection unit 61 is a nitrogen gas stored in the nitrogen gas tank connected to the pressurized port (55a) and the discharge port (55b) through a pipe, the electronic opening and closing between the pressurized port (55a) and nitrogen gas tank By using the valve, the condensation preventing gas (nitrogen gas) in the pressurized state may be implemented by a method of injecting through the pressurizing port 55a and recovering it through the discharge port 55b.

컨디셔너(62)는 각 연마패드(22)에 하나씩 설치되고, 연마패드(22)에 압력을 가해 연마패드(22)의 편평도를 유지시키도록 동작한다.One conditioner 62 is provided for each polishing pad 22, and operates to apply pressure to the polishing pad 22 to maintain the flatness of the polishing pad 22. As shown in FIG.

세척수분사부(63)는 연마스테이션(20) 사이 및 연마스테이션(20)과 트랜스퍼스테이션(40) 사이에 하나씩 설치되고, 세척수분사노즐을 통해 세척수를 분사하여 연마스테이션(20) 사이 및 연마스테이션(20)과 트랜스퍼스테이션(40) 사이를 이동하는 웨이퍼를 세척하도록 동작한다. 여기서 세척수로는 보통 탈이온수(DIW, Deionized Water)를 사용한다.The washing water spraying unit 63 is installed one by one between the polishing station 20 and between the polishing station 20 and the transfer station 40, and sprays the washing water through the washing water spray nozzle, between the polishing station 20 and the polishing station ( 20) and to clean the wafer moving between the transfer station 40. In this case, deionized water (DIW) is usually used as the washing water.

연마제어부(64)는 입력단에 촬상화면판독부(58)와 상위제어부(65)가 연결되어 있고, 출력단에는 패드지지판회전구동부(23), 멤브레인흡입팽창부(33), 헤드지지체회전구동부(34), 헤드바디부회전구동부(35), 헤드바디부직선이동구동부(36), 트랜스퍼판직선이동구동부(43), 웨이퍼교체부(51), 연마제슬러리공급부(52), 촬상카메라(53), 조명부(54), 유지링세정가스분사부(56), 송풍부(57), 렌즈세정가스분사부(59) 및 결로방지가스분사부(61)가 연결되어 있다.The polishing control unit 64 has an image capturing screen reader 58 and an upper control unit 65 connected to an input terminal, and a pad support plate rotating driver 23, a membrane suction expanding part 33, and a head support rotating driver 34 at an output end thereof. ), The head body rotational drive unit 35, the head body non-linear drive unit 36, transfer plate linear drive unit 43, wafer replacement unit 51, abrasive slurry supply unit 52, imaging camera 53, The lighting unit 54, the retaining ring cleaning gas injection unit 56, the blower unit 57, the lens cleaning gas injection unit 59 and the condensation preventing gas injection unit 61 are connected.

이러한 구성을 갖는 연마제어부(64)의 제어동작을 설명하면 다음과 같다. 설명의 편의를 위해 연마스테이션(20)을 반시계방향으로 순차적으로 제1연마스테이션(20-1), 제2연마스테이션(20-2) 및 제3연마스테이션(20-3)이라고 하고, 컨디셔너(62)를 반시계방향으로 순차적으로 제1컨디셔너(62-1, 제1연마스테이션에 대응하는 컨디셔너가 됨), 제2컨디셔너(62-2) 및 제3컨디셔너(62-3)라고 하고, 연마제슬러리공급부(52)를 반시계방향으로 순차적으로 제1연마제슬러리공급부(제1연마스테이션에 대응하는 연마제슬러리공급부가 됨), 제2연마제슬러리공급부 및 제3연마제슬러리공급부라고 하고, 연마헤드부(32)는 트랜스퍼판(41)과 3개의 연마패드(22) 상측에 배치되어 있는 것으로 가정하고, 연마헤드부(32)를 반시계방향으로 순차적으로 제1연마헤드부(32-1, 제1연마스테이션의 상측에 배치된 연마헤드부가 됨), 제2연마헤드부(32-2), 제3연마헤드부(32-3) 및 제4헤드바디부(32-4, 트랜스퍼판 상측에 배치된 연마헤드부가 됨)라고 한다.Referring to the control operation of the polishing control unit 64 having such a configuration is as follows. For convenience of description, the polishing station 20 is referred to as a first polishing station 20-1, a second polishing station 20-2 and a third polishing station 20-3 sequentially in a counterclockwise direction. The 62 is referred to as the first conditioner 62-1 (which becomes a conditioner corresponding to the first polishing station), the second conditioner 62-2 and the third conditioner 62-3 in the counterclockwise direction, The abrasive slurry supply unit 52 is referred to as a first abrasive slurry supply unit (which becomes an abrasive slurry supply unit corresponding to the first polishing station), a second abrasive slurry supply unit and a third abrasive slurry supply unit sequentially in a counterclockwise direction, and the polishing head unit Assume that 32 is disposed above the transfer plate 41 and the three polishing pads 22, and the polishing head portion 32 is sequentially disposed in the counterclockwise direction of the first polishing head portion 32-1. The polishing head portion disposed above the first polishing station), the second polishing head portion 32-2, and the third polishing head portion 3 2-3) and the fourth head body portion 32-4 (which is the polishing head portion disposed above the transfer plate).

먼저 연마제어부(64)는 웨이퍼대기위치(51a)에 있는 웨이퍼가 트랜스퍼판(41)으로 로딩되도록 웨이퍼교체부(51)의 로딩동작을 제어한다(S11).First, the polishing control unit 64 controls the loading operation of the wafer replacement unit 51 so that the wafer at the wafer standby position 51a is loaded into the transfer plate 41 (S11).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 접근하도록 즉, 웨이퍼전달위치(트랜스퍼판로부터 헤드바디부로 웨이퍼가 전달되는 위치)에 트랜스퍼판(41)이 도달하도록 트랜스퍼판직선이동구동부(43)를 제어한다(S12).Then, the polishing control unit 64 approaches the fourth polishing head portion 32-4, that is, the transfer plate 41 reaches the wafer transfer position (the position at which the wafer is transferred from the transfer plate to the head body portion). The linear movement driving unit 43 is controlled (S12).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인(32b)에 트랜스퍼판(41)에 탑재된 웨이퍼가 흡착되도록 멤브레인흡입팽창부(33)를 제어한다(S13).Next, the polishing control unit 64 controls the membrane suction expansion portion 33 to adsorb the wafer mounted on the transfer plate 41 to the membrane 32b corresponding to the fourth polishing head portion 32-4 (S13). ).

다음에 연마제어부(64)는 트랜스퍼판(41)이 초기설치위치로 복귀하도록 트랜스퍼판직선이동구동부(43)를 제어한다(S14).Next, the polishing control unit 64 controls the transfer plate linear movement driver 43 so that the transfer plate 41 returns to the initial installation position (S14).

다음에 연마제어부(64)는 제1연마헤드부(32-1), 제2연마헤드부(32-2), 제3연마헤드부(32-3) 및 제4연마헤드부(32-4)가 세척수분사부(63)의 상측에 도달하도록 헤드지지체회전구동부(34)를 제어한다(S15).Next, the polishing control unit 64 includes a first polishing head portion 32-1, a second polishing head portion 32-2, a third polishing head portion 32-3, and a fourth polishing head portion 32-4. ) Controls the head support rotation driving unit 34 to reach the upper side of the washing water injection unit (63) (S15).

다음에 연마제어부(64)는 세척수분사부(63)로부터 세척수가 분사되도록 세척수분사부(63)를 제어한다(S16).Next, the polishing control unit 64 controls the washing water spraying unit 63 to spray the washing water from the washing water spraying unit 63 (S16).

다음에 연마제어부(64)는 제3연마헤드부(32-3)가 트랜스퍼판(41)의 상측에, 제4연마헤드부(32-4)가 제1연마스테이션(20-1)의 상측에, 제1연마헤드부(32-1)가 제2연마스테이션(20-2)의 상측에, 제2연마헤드부(32-2)가 제3연마스테이션(20-3)의 상측에 배치되도록 헤드지지체회전구동부(34)를 제어한다(S21).Next, in the polishing control unit 64, the third polishing head portion 32-3 is above the transfer plate 41, and the fourth polishing head portion 32-4 is above the first polishing station 20-1. On the other hand, the first polishing head 32-1 is disposed above the second polishing station 20-2, and the second polishing head 32-2 is disposed above the third polishing station 20-3. The head support rotation drive unit 34 is controlled (S21).

다음에 연마제어부(64)는 제4연마헤드부(32-4)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S22).Next, the polishing control unit 64 controls the head body non-linear movement driving unit 36 to move the fourth polishing head portion 32-4 to the wafer polishing position (the position at which the wafer is polished by the polishing pad) (S22). ).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(33)를 제어한다(S23).Next, the polishing control unit 64 controls the membrane suction expansion portion 33 such that the wafer adsorbed on the membrane corresponding to the fourth polishing head portion 32-4 is in pressure contact with the polishing pad (S23).

다음에 연마제어부(64)는 미리 정해진 시간동안 제4연마헤드부(32-4)와 제1연마스테이션에 속하는 연마패드가 회전하고 제1컨디셔너(62-1)가 동작하고 제1슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(23), 헤드바디부회전구동부(35), 제1슬러리공급부 및 제1컨디셔너(62-1)를 제어한다(S24, 도8 참조).Then, the polishing control unit 64 rotates the polishing pads belonging to the fourth polishing head 32-4 and the first polishing station for a predetermined time, and the first conditioner 62-1 is operated and the first slurry supply unit is turned off. The pad support plate rotary drive unit 23, the head body rotary drive unit 35, the first slurry supply unit and the first conditioner 62-1 are controlled to stop after the abrasive slurry is supplied (S24, see Fig. 8).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인(32b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(33)를 제어한다(S25).Next, the polishing control unit 64 controls the membrane suction expansion portion 33 to resorb the wafer to the membrane 32b corresponding to the fourth polishing head portion 32-4 (S25).

다음에 연마제어부(64)는 제4연마헤드부(32-4)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S26).Next, the polishing control unit 64 controls the head body non-linear movement driving unit 36 to move the fourth polishing head portion 32-4 to the initial installation position (S26).

한편 연마제어부(64)는 S21 내지 S26 단계가 진행되는 동안 제3연마헤드부(32-3)에 대하여 S11 내지 S14단계를 진행한다.On the other hand, the polishing control unit 64 proceeds to step S11 to S14 with respect to the third polishing head portion 32-3 during the step S21 to S26.

다음에 연마제어부(64)는 제1연마헤드부(32-1), 제2연마헤드부(32-2), 제3연마헤드부(32-3) 및 제4연마헤드부(32-4)가 세척수분사부(63)의 상측에 도달하도록 헤드지지체회전구동부(34)를 제어한다(S27).Next, the polishing control unit 64 includes a first polishing head portion 32-1, a second polishing head portion 32-2, a third polishing head portion 32-3, and a fourth polishing head portion 32-4. ) Controls the head support rotation driving unit 34 to reach the upper side of the washing water injection unit (63) (S27).

다음에 연마제어부(64)는 세척수분사부(63)로부터 세척수가 분사되도록 세척수분사부(63)를 제어한다(S28).Next, the polishing control unit 64 controls the washing water injection unit 63 so that the washing water is injected from the washing water injection unit 63 (S28).

다음에 연마제어부(64)는 제2연마헤드부(32-2)가 트랜스퍼판(41)의 상측에, 제3연마헤드부(32-3)가 제1연마스테이션(20-1)의 상측에, 제4연마헤드부(32-4)가 제2연마스테이션(20-2)의 상측에, 제1연마헤드부(32-1)가 제3연마스테이션(20-3)의 상측에 배치되도록 헤드지지체회전구동부(34)를 제어한다(S31).Next, in the polishing control unit 64, the second polishing head portion 32-2 is on the upper side of the transfer plate 41, and the third polishing head portion 32-3 is on the upper side of the first polishing station 20-1. The fourth polishing head portion 32-4 is disposed above the second polishing station 20-2, and the first polishing head portion 32-1 is disposed above the third polishing station 20-3. The head support rotation drive unit 34 is controlled to be (S31).

다음에 연마제어부(64)는 제4연마헤드부(32-4)와 제3연마헤드부(32-3)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S32).Then, the polishing control unit 64 includes the head body portion so that the fourth polishing head portion 32-4 and the third polishing head portion 32-3 move to the wafer polishing position (the position at which the wafer is polished by the polishing pad). The linear movement driving unit 36 is controlled (S32).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인에 흡착된 웨이퍼와 제3연마헤드부(32-3)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(33)를 제어한다(S33).Next, the polishing control unit 64 presses the wafer adsorbed on the membrane corresponding to the fourth polishing head portion 32-4 and the wafer adsorbed on the membrane corresponding to the third polishing head portion 32-3 to the polishing pad. The membrane suction expansion portion 33 is controlled to contact (S33).

다음에 연마제어부(64)는 미리 정해진 시간동안 제4연마헤드부(32-4), 제3연마헤드부(32-3), 제1연마스테이션(20-1)에 속하는 연마패드 및 제2연마스테이션(20-2)에 속하는 연마패드가 회전하고 제1컨디셔너(62-1)와 제2컨디셔너(62-2)가 동작하고 제1슬러리공급부와 제2슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(23), 헤드바디부회전구동부(35), 제1슬러리공급부 및 제1컨디셔너(62-1)를 제어한다(S34).Then, the polishing control unit 64 includes a polishing pad belonging to the fourth polishing head portion 32-4, the third polishing head portion 32-3, the first polishing station 20-1, and the second polishing head portion 32-3 for a predetermined time. After the polishing pad belonging to the polishing station 20-2 is rotated, the first conditioner 62-1 and the second conditioner 62-2 are operated, and the abrasive slurry is supplied from the first slurry supply part and the second slurry supply part. The pad support plate rotating driver 23, the head body rotating driver 35, the first slurry supply part and the first conditioner 62-1 are controlled to be stopped (S34).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인(32b)과 제3연마헤드부(32-3)에 대응하는 멤브레인(32b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(33)를 제어한다(S35).Next, the polishing control unit 64 allows the wafer to be resorbed to the membrane 32b corresponding to the fourth polishing head portion 32-4 and the membrane 32b corresponding to the third polishing head portion 32-3. The suction expansion unit 33 is controlled (S35).

다음에 연마제어부(64)는 제4연마헤드부(32-4)와 제3연마헤드부(32-3)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S36).Next, the polishing control unit 64 controls the head body non-linear movement driving unit 36 to move the fourth polishing head portion 32-4 and the third polishing head portion 32-3 to the initial installation position (S36). ).

한편 연마제어부(64)는 S31 내지 S36 단계가 진행되는 동안 제2연마헤드부(32-2)에 대하여 S11 내지 S14 단계를 진행한다.Meanwhile, the polishing control unit 64 performs the steps S11 to S14 with respect to the second polishing head part 32-2 while the steps S31 to S36 are in progress.

다음에 연마제어부(64)는 제1연마헤드부(32-1), 제2연마헤드부(32-2), 제3연마헤드부(32-3) 및 제4연마헤드부(32-4)가 세척수분사부(63)의 상측에 도달하도록 헤드지지체회전구동부(34)를 제어한다(S37).Next, the polishing control unit 64 includes a first polishing head portion 32-1, a second polishing head portion 32-2, a third polishing head portion 32-3, and a fourth polishing head portion 32-4. ) Controls the head support rotation driving unit 34 to reach the upper side of the washing water injection unit (63) (S37).

다음에 연마제어부(64)는 세척수분사부(63)로부터 세척수가 분사되도록 세척수분사부(63)를 제어한다(S38).Next, the polishing control unit 64 controls the washing water spraying unit 63 to spray the washing water from the washing water spraying unit 63 (S38).

다음에 연마제어부(64)는 제1연마헤드부(32-1)가 트랜스퍼판(41)의 상측에, 제2연마헤드부(32-2)가 제1연마스테이션(20-1)의 상측에, 제3연마헤드부(32-3)가 제2연마스테이션(20-2)의 상측에, 제4연마헤드부(32-4)가 제3연마스테이션(20-3)의 상측에 배치되도록 헤드지지체회전구동부(34)를 제어한다(S41).Next, in the polishing control unit 64, the first polishing head portion 32-1 is above the transfer plate 41, and the second polishing head portion 32-2 is above the first polishing station 20-1. The third polishing head portion 32-3 is disposed above the second polishing station 20-2, and the fourth polishing head portion 32-4 is disposed above the third polishing station 20-3. The head support rotation driving unit 34 is controlled (S41).

다음에 연마제어부(64)는 제4연마헤드부(32-4), 제3연마헤드부(32-3) 및 제2연마헤드부(32-2)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S42).Next, in the polishing control unit 64, the fourth polishing head portion 32-4, the third polishing head portion 32-3, and the second polishing head portion 32-2 are placed at the wafer polishing position (the wafer is polished by the polishing pad). The head body non-linear movement driving unit 36 is moved (S42).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인에 흡착된 웨이퍼, 제3연마헤드부(32-3)에 대응하는 멤브레인에 흡착된 웨이퍼 및 제2연마헤드부(32-2)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(33)를 제어한다(S43).Next, the polishing control unit 64 includes a wafer adsorbed on the membrane corresponding to the fourth polishing head portion 32-4, a wafer adsorbed on the membrane corresponding to the third polishing head portion 32-3, and a second polishing head. The membrane suction expansion portion 33 is controlled such that the wafer adsorbed on the membrane corresponding to the portion 32-2 is in pressure contact with the polishing pad (S43).

다음에 연마제어부(64)는 미리 정해진 시간동안 제4연마헤드부(32-4), 제3연마헤드부(32-3), 제2연마헤드부(32-2), 제1연마스테이션(20-1)에 속하는 연마패드, 제2연마스테이션(20-2)에 속하는 연마패드 및 제3연마스테이션(20-3)에 속하는 연마패드가 회전하고, 제1컨디셔너(62-1), 제2컨디셔너(62-2) 및 제3컨디셔너(62-3)가 동작하고 제1슬러리공급부, 제2슬러리공급부 및 제3슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(23), 헤드바디부회전구동부(35), 제1슬러리공급부 및 제1컨디셔너(62-1)를 제어한다(S44).Next, the polishing control unit 64 includes the fourth polishing head portion 32-4, the third polishing head portion 32-3, the second polishing head portion 32-2, and the first polishing station for a predetermined time. The polishing pad belonging to 20-1), the polishing pad belonging to second polishing station 20-2, and the polishing pad belonging to third polishing station 20-3 are rotated, and the first conditioner 62-1 The pad support plate rotating drive unit 23 so that the second conditioner 62-2 and the third conditioner 62-3 operate and are stopped after the abrasive slurry is supplied from the first slurry supply unit, the second slurry supply unit, and the third slurry supply unit; The head body rotary drive unit 35, the first slurry supply unit and the first conditioner 62-1 is controlled (S44).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인(32b), 제3연마헤드부(32-3)에 대응하는 멤브레인(32b) 및 제2연마헤드부(32-2)에 대응하는 멤브레인(32b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(33)를 제어한다(S45).Next, the polishing control unit 64 includes a membrane 32b corresponding to the fourth polishing head portion 32-4, a membrane 32b corresponding to the third polishing head portion 32-3, and a second polishing head portion ( The membrane suction expansion part 33 is controlled so that the wafer is resorbed to the membrane 32b corresponding to 32-2) (S45).

다음에 연마제어부(64)는 제4연마헤드부(32-4), 제3연마헤드부(32-3) 및 제2연마헤드부(32-2)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S46).Next, the polishing control unit 64 includes a head body portion such that the fourth polishing head portion 32-4, the third polishing head portion 32-3, and the second polishing head portion 32-2 move to the initial installation position. The linear movement driving unit 36 is controlled (S46).

한편 연마제어부(64)는 S41 내지 S46 단계가 진행되는 동안 제1연마헤드부(32-1)에 대하여 S11 내지 S14단계를 진행한다.Meanwhile, the polishing control unit 64 performs the steps S11 to S14 with respect to the first polishing head part 32-1 while the steps S41 to S46 are performed.

다음에 연마제어부(64)는 제1연마헤드부(32-1), 제2연마헤드부(32-2), 제3연마헤드부(32-3) 및 제4연마헤드부(32-4)가 세척수분사부(63)의 상측에 도달하도록 헤드지지체회전구동부(34)를 제어한다(S47).Next, the polishing control unit 64 includes a first polishing head portion 32-1, a second polishing head portion 32-2, a third polishing head portion 32-3, and a fourth polishing head portion 32-4. ) Controls the head support rotation driving unit 34 to reach the upper side of the washing water injection unit (63) (S47).

다음에 연마제어부(64)는 세척수분사부(63)로부터 세척수가 분사되도록 세척수분사부(63)를 제어한다(S48).Next, the polishing control unit 64 controls the washing water spraying unit 63 to spray the washing water from the washing water spraying unit 63 (S48).

다음에 연마제어부(64)는 제4연마헤드부(32-4)가 트랜스퍼판(41)의 상측에, 제1연마헤드부(32-1)가 제1연마스테이션(20-1)의 상측에, 제2연마헤드부(32-2)가 제2연마스테이션(20-2)의 상측에, 제3연마헤드부(32-3)가 제3연마스테이션(20-3)의 상측에 배치되도록 헤드지지체회전구동부(34)를 제어한다(S51).Next, in the polishing control unit 64, the fourth polishing head portion 32-4 is above the transfer plate 41, and the first polishing head portion 32-1 is above the first polishing station 20-1. The second polishing head portion 32-2 is disposed above the second polishing station 20-2, and the third polishing head portion 32-3 is disposed above the third polishing station 20-3. The head support rotation drive unit 34 is controlled so as to (S51).

다음에 연마제어부(64)는 제1연마헤드부(32-1), 제2연마헤드부(32-2) 및 제3연마헤드부(32-3)가 웨이퍼연마위치(연마패드에 의해 웨이퍼가 연마되는 위치)로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S52).Next, in the polishing control unit 64, the first polishing head portion 32-1, the second polishing head portion 32-2, and the third polishing head portion 32-3 are placed at the wafer polishing position (the wafer is polished by the polishing pad). The head body non-linear movement driving unit 36 to move to the position where it is polished (S52).

다음에 연마제어부(64)는 제1연마헤드부(32-1)에 대응하는 멤브레인에 흡착된 웨이퍼, 제2연마헤드부(32-2)에 대응하는 멤브레인에 흡착된 웨이퍼 및 제3연마헤드부(32-3)에 대응하는 멤브레인에 흡착된 웨이퍼가 연마패드에 가압접촉하도록 멤브레인흡입팽창부(33)를 제어한다(S53).Next, the polishing control unit 64 includes a wafer adsorbed on the membrane corresponding to the first polishing head portion 32-1, a wafer adsorbed on the membrane corresponding to the second polishing head portion 32-2, and a third polishing head. The membrane suction expansion portion 33 is controlled such that the wafer adsorbed on the membrane corresponding to the portion 32-3 is in pressure contact with the polishing pad (S53).

다음에 연마제어부(64)는 미리 정해진 시간동안 제1연마헤드부(32-1), 제2연마헤드부(32-2), 제3연마헤드부(32-3), 제1연마스테이션(20-1)에 속하는 연마패드, 제2연마스테이션(20-2)에 속하는 연마패드 및 제3연마스테이션(20-3)에 속하는 연마패드가 회전하고, 제1컨디셔너(62-1), 제2컨디셔너(62-2) 및 제3컨디셔너(62-3)가 동작하고 제1슬러리공급부, 제2슬러리공급부 및 제3슬러리공급부로부터 연마제슬러리가 공급된 후 중지되도록 패드지지판회전구동부(23), 헤드바디부회전구동부(35), 제1슬러리공급부 및 제1컨디셔너(62-1)를 제어한다(S54).Then, the polishing control unit 64 includes the first polishing head portion 32-1, the second polishing head portion 32-2, the third polishing head portion 32-3, and the first polishing station for a predetermined time. The polishing pad belonging to 20-1), the polishing pad belonging to second polishing station 20-2, and the polishing pad belonging to third polishing station 20-3 are rotated, and the first conditioner 62-1 The pad support plate rotating drive unit 23 so that the second conditioner 62-2 and the third conditioner 62-3 operate and are stopped after the abrasive slurry is supplied from the first slurry supply unit, the second slurry supply unit, and the third slurry supply unit; The head body rotation driving unit 35, the first slurry supply unit and the first conditioner 62-1 are controlled (S54).

다음에 연마제어부(64)는 제1연마헤드부(32-1)에 대응하는 멤브레인(32b), 제2연마헤드부(32-2)에 대응하는 멤브레인(32b) 및 제3연마헤드부(3232)에 대응하는 멤브레인(32b)에 웨이퍼가 다시 흡착되도록 멤브레인흡입팽창부(33)를 제어한다(S55).Next, the polishing control unit 64 includes a membrane 32b corresponding to the first polishing head portion 32-1, a membrane 32b corresponding to the second polishing head portion 32-2, and a third polishing head portion ( The membrane suction expansion part 33 is controlled to resorb the wafer to the membrane 32b corresponding to 3232 (S55).

다음에 연마제어부(64)는 제4연마헤드부(32-4), 제3연마헤드부(32-3) 및 제2연마헤드부(32-2)가 초기설치위치로 이동하도록 헤드바디부직선이동구동부(36)를 제어한다(S56).Next, the polishing control unit 64 includes a head body portion such that the fourth polishing head portion 32-4, the third polishing head portion 32-3, and the second polishing head portion 32-2 move to the initial installation position. The linear movement driving unit 36 is controlled (S56).

한편 연마제어부(64)는 S51 내지 S56 단계가 진행되는 동안 다음과 같은 제어동작을 수행한다.On the other hand, the polishing control unit 64 performs the following control operation during the steps S51 to S56.

연마제어부(64)는 제4연마헤드부(32-4)에 접근하도록 즉, 웨이퍼전달위치에 트랜스퍼판(41)이 도달하도록 트랜스퍼판직선이동구동부(43)를 제어한다(S61).The polishing control unit 64 controls the transfer plate linear movement driving unit 43 to approach the fourth polishing head portion 32-4, that is, the transfer plate 41 reaches the wafer transfer position (S61).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대응하는 멤브레인에 흡착된 웨이퍼가 웨이퍼인출위치(51b)로 언로딩되도록 웨이퍼교체부(51)의 로딩동작을 제어한다(S62).Then, the polishing control unit 64 controls the loading operation of the wafer replacement unit 51 so that the wafer adsorbed on the membrane corresponding to the fourth polishing head portion 32-4 is unloaded to the wafer withdrawal position 51b ( S62).

다음에 연마제어부(64)는 제4연마헤드부(32-4)에 대하여 S11 내지 S14단계를 진행한다.Next, the polishing control unit 64 performs steps S11 to S14 for the fourth polishing head portion 32-4.

이상 설명한 연마제어부(64)의 연마제어동작은 종래 널리 알려져 있으므로 상세한 설명은 생략하기로 한다.Since the polishing control operation of the polishing control unit 64 described above is widely known in the art, the detailed description thereof will be omitted.

그리고 연마제어부(64)는 재연마웨이퍼가 웨이퍼대기위치(51a)로 공급된다는 것을 나타내는 상위제어부(65)로부터 재연마웨이퍼신호가 입력될 때 재연마웨이퍼에 대한 웨이퍼연마동작(재연마웨이퍼연마동작)이 연마스테이션(20) 중 어느 일방에 의해 1회만 이루어지도록 패드지지판회전구동부(23)의 패드지지판회전동작, 헤드지지체회전구동부(34)의 연마헤드지지체회전동작, 헤드바디부회전구동부(35)의 헤드바디부회전동작, 헤드바디부직선이동구동부(36)의 헤드바디부직선이동동작 및 연마제슬러리공급부(52)의 연마제슬러리공급동작을 제어한다. 본 명세서에서 재연마웨이퍼는 1차연마과정을 거친 후 다시 연마되는 웨이퍼를 의미한다.Then, the polishing controller 64 performs a wafer polishing operation (regrind wafer polishing operation) on the regrind wafer when a regrind wafer signal is input from the upper controller 65 indicating that the regrind wafer is supplied to the wafer standby position 51a. ), The pad support plate rotation operation of the pad support plate rotation drive unit 23, the polishing support body rotation operation of the head support rotation drive unit 34, and the head body rotation drive unit 35 so that is performed only once by any one of the polishing stations 20. The head body portion rotation operation of the head), the head body non-linear movement operation of the head body nonlinear movement driving portion 36, and the abrasive slurry supply operation of the abrasive slurry supply portion 52 are controlled. In the present specification, a regrind wafer means a wafer that is polished again after undergoing a primary polishing process.

상위제어부(65)는 다음과 같은 방법 등으로 재연마웨이퍼신호를 생성하여 연마제어부(64)로 전송할 수 있다.The upper controller 65 may generate a regrind wafer signal and transmit it to the polishing controller 64 in the following manner.

FOUP(Front Open Unified Pod)과 같은 웨이퍼저장용기(도시되지 않음) 중 재연마웨이퍼가 저장된 웨이퍼저장용기에 웨이퍼이송로봇(웨이퍼저장용기로부터 웨이퍼대기위치로 웨이퍼를 이송함)의 웨이퍼인출동작을 감지하는 센서를 설치하고, 이 센서의 검출값에 기초하여 상위제어부(65)가 재연마웨이퍼신호를 생성하여 연마제어부(64)로 전송하도록 한다.Detect the wafer withdrawal operation of the wafer transfer robot (the wafer is transferred from the wafer storage container to the wafer standby position) in the wafer storage container in which the regrind wafer is stored among the wafer storage containers (not shown) such as FOUP (Front Open Unified Pod). The upper controller 65 generates a regrind wafer signal and transmits the regrind wafer signal to the polishing controller 64 based on the detected value of the sensor.

한편 연마제어부(64)는 헤드바디부(32a)가 트랜스퍼판(41)의 상측에 배치되어 있을 때 웨이퍼교체부(51)의 언로딩동작이 종료되는 언로딩종료시점과 웨이퍼교체부(51)의 로딩동작이 시작되는 로딩개시시점사이에 조명부(54)가 유지링촬상영역을 향해 조명하고 유지링세정가스분사부(56)가 유지링촬상영역을 향해 세정가스를 분사하며 송풍부(57)가 송풍영역을 향해 송풍하도록 조명부(54)의 조명동작, 유지링세정가스분사부(56)의 분사동작 및 송풍부(57)의 송풍동작을 제어한다.On the other hand, in the polishing control unit 64, the unloading end point and the wafer replacement unit 51 at which the unloading operation of the wafer replacement unit 51 ends when the head body 32a is disposed above the transfer plate 41 are completed. Between the starting point of the loading operation of the loading operation, the lighting unit 54 illuminates toward the retaining ring photographing area, and the retaining ring cleaning gas injection unit 56 injects a cleaning gas toward the retaining ring photographing area, and blows the blowing unit 57. The lighting operation of the lighting unit 54, the injection operation of the retaining ring cleaning gas injection unit 56, and the blowing operation of the blowing unit 57 are controlled so that the air is blown toward the blowing area.

여기서 조명부(54)의 조명동작은 가능한 촬상카메라(53)의 촬상동작시간에 한정하여 이루어지도록 제어하는 것이 바람직하다(조명에 의한 웨이퍼 손상 최소화).In this case, it is preferable to control the illumination operation of the illumination unit 54 to be limited to the imaging operation time of the imaging camera 53 as much as possible (minimizing wafer damage by illumination).

그리고 연마제어부(64)는 조명부(54)에 의한 조명동작, 유지링세정가스분사부(56)에 의한 분사동작 및 송풍부(57)에 의한 송풍동작이 시작된 후 촬상카메라(53)의 촬상동작이 이루어지도록 촬상카메라(53)를 제어한다.In addition, the polishing control unit 64 performs the imaging operation of the imaging camera 53 after the illumination operation by the illumination unit 54, the injection operation by the retaining ring cleaning gas injection unit 56, and the blowing operation by the blower unit 57 are started. The imaging camera 53 is controlled to achieve this.

또한 연마제어부(64)는 웨이퍼교체부(51)의 언로딩동작이 종료되는 언로딩종료시점 이전에 렌즈세정가스분사부(59)가 렌즈를 향해 세정가스를 분사하도록 렌즈세정가스분사부(59)의 분사동작을 제어한다.In addition, the polishing control unit 64 allows the lens cleaning gas injection unit 59 to inject the cleaning gas toward the lens before the unloading end point at which the unloading operation of the wafer replacement unit 51 ends. Control the injection operation.

또한 연마제어부(64)는 방수하우징(55)과 촬상카메라(53)의 사이공간에 결로방지가스를 분사하도록 결로방지가스분사부(61)의 분사동작을 제어한다.In addition, the polishing control unit 64 controls the injection operation of the condensation preventing gas injection unit 61 to inject condensation preventing gas into the space between the waterproof housing 55 and the imaging camera 53.

연마제어부(64)는 상위제어부(65)로부터 재연마웨이퍼신호가 입력될 때 웨이퍼대기위치(51a)에 공급된 재연마웨이퍼가 연마과정을 거친 후 웨이퍼인출위치(51b)를 통해 외부로 이송될 때까지 촬상카메라(53)의 촬상동작이 중지되도록 촬상카메라(53)를 제어한다.When the regrind wafer signal is input from the upper controller 65, the polishing controller 64 may be transferred to the outside through the wafer withdrawal position 51b after the regrind wafer supplied to the wafer standby position 51a undergoes the polishing process. The imaging camera 53 is controlled to stop the imaging operation of the imaging camera 53 until it stops.

한편 연마제어부(64)는 촬상화면판독부(58)로부터 연마중지신호가 입력되면 다음과 같이 동작한다.On the other hand, the polishing control unit 64 operates as follows when the polishing stop signal is input from the image capturing screen reader 58.

웨이퍼대기위치(51a)로부터 트랜스퍼판(41)으로 웨이퍼가 로딩되는 동작이 중지되고 멤브레인(32b)에 흡착된 웨이퍼에 대한 연마작업을 계속 진행하고 트랜스퍼판(41)으로부터 웨이퍼인출위치(51b)로 연마작업중인 모든 웨이퍼가 순차적으로 언로딩되도록 웨이퍼교체부(51), 패드지지판회전구동부(23), 헤드지지체회전구동부(34), 헤드바디부회전구동부(35), 헤드바디부직선이동구동부(36), 연마제슬러리공급부(52) 및 트랜스퍼판직선이동구동부(43)를 제어한다.The operation of loading the wafer from the wafer standby position 51a to the transfer plate 41 is stopped, and the polishing operation on the wafer adsorbed on the membrane 32b is continued and the wafer is removed from the transfer plate 41 to the wafer withdrawal position 51b. The wafer replacement part 51, the pad support plate rotation drive part 23, the head support rotation drive part 34, the head body rotation drive part 35, and the head body nonlinear movement drive part so that all the wafers being polished are sequentially unloaded. 36), the abrasive slurry supply part 52 and the transfer plate linear movement drive part 43 are controlled.

그리고 연마제어부(64)는 트랜스퍼판(41)으로부터 웨이퍼인출위치(51b)로 연마작업중인 모든 웨이퍼가 언로딩된 후 웨이퍼교체부(51), 패드지지판회전구동부(23), 헤드지지체회전구동부(34), 헤드바디부회전구동부(35), 헤드바디부직선이동구동부(36), 연마제슬러리공급부(52) 및 트랜스퍼판직선이동구동부(43)에 대한 제어동작을 중지한다.Then, the polishing control unit 64 is the wafer replacement unit 51, the pad support plate rotation drive unit 23, the head support body rotation drive unit after all the wafers being polished from the transfer plate 41 to the wafer withdrawal position 51b is unloaded. 34), the control operation for the head body rotary drive unit 35, the head body nonlinear linear drive unit 36, the abrasive slurry supply unit 52 and the transfer plate linear linear drive unit 43 is stopped.

한편 전술한 실시예에서는 촬상화면판독부(58)를 통해 유지링(32c)의 내표면에 손상야기스크래치가 발생했는 지 여부를 판단하도록 하고 있으나, 작업자가 육안으로 촬상카메라(53)의 촬상화면을 확인하여 손상야기스크래치가 발생했다고 판단한 경우 별도의 단말기를 통해 연마제어부(64)에 연마중지신호를 전송하도록 본 발명을 실시할 수 있다.On the other hand, in the above-described embodiment, the image screen reading unit 58 is to determine whether or not the damage caused scratch on the inner surface of the retaining ring (32c), the operator visually to the image pickup screen of the image pickup camera 53 If it is determined that the damage caused the scratch scratch can be carried out the present invention to transmit the polishing stop signal to the polishing control unit 64 through a separate terminal.

그리고 전술한 실시예에서는 촬상화면판독부(58)는 명도요건충족열에 해당하는 세로픽셀열이 존재하고, 명도요건충족군(A) 사이의 이격거리 모두가 이격거리기준범위(20 내지 30)에 속하는 경우 연마중지신호를 생성하도록 구성하고 있으나, 다음과 같은 요건이 성립되는 경우에 연마중지신호를 생성하도록 구성하여 본 발명을 실시할 수 있다.In the above-described embodiment, the image capturing screen reader 58 has a vertical pixel column corresponding to the brightness requirement meeting sequence, and all of the separation distances between the brightness requirement meeting groups A are in the separation distance reference range 20 to 30. In the case of belonging to the polishing stop signal is configured, but the following conditions are satisfied, the polishing stop signal can be configured to generate the present invention can be implemented.

1) 명도요건충족열에 해당하는 세로픽셀열이 존재하는 경우1) When there is a column of vertical pixels corresponding to the column satisfying the brightness requirements

2) 명도요건충족열에 해당하는 세로픽셀열이 존재하고, 단일명도요건충족픽셀열과 명도요건충족픽셀군 개수의 합이 개수기준범위(3 내지 5)에 속하는 경우2) There is a vertical pixel column corresponding to the brightness requirement fulfillment column, and the sum of the number of the single brightness requirement fulfillment pixel column and the number of the brightness requirement fulfillment pixel group is in the number standard range (3 to 5).

여기서 연마중지신호를 생성하는 데 사용되는 개수기준범위는 전술한 이격거리기준범위와 같은 방법으로 설정할 수 있다.Here, the number reference range used to generate the polishing stop signal may be set in the same manner as the aforementioned separation distance reference range.

또한 전술한 실시예에서는 웨이퍼에 대한 연마동작에 더하여 조명부(54)의 조명동작, 유지링세정가스분사부(56)의 분사동작, 송풍부(57)의 송풍동작, 촬상카메라(53)의 촬상동작, 렌즈세정가스분사부(59)의 분사동작 및 결로방지가스분사부(61)의 분사동작을 연마제어부(64)에서 제어하도록 구성하고 있으나, 조명부(54)의 조명동작, 유지링세정가스분사부(56)의 분사동작, 송풍부(57)의 송풍동작, 촬상카메라(53)의 촬상동작, 렌즈세정가스분사부(59)의 분사동작 및 결로방지가스분사부(61)의 분사동작은 연마제어부(64)와 분리된 다른 제어부에서 제어하도록 구성하여 본 발명을 실시할 수 있음은 물론이다.Further, in the above-described embodiment, in addition to the polishing operation on the wafer, the illumination operation of the illumination unit 54, the injection operation of the retaining ring cleaning gas injection unit 56, the blowing operation of the blower 57, and the imaging of the imaging camera 53 are performed. Operation, the injection operation of the lens cleaning gas injection unit 59 and the injection operation of the condensation preventing gas injection unit 61 are configured to be controlled by the polishing control unit 64, but the illumination operation of the illumination unit 54, the holding ring cleaning gas. Injection operation of the injection unit 56, blowing operation of the blower 57, imaging operation of the imaging camera 53, injection operation of the lens cleaning gas injection unit 59 and injection operation of the condensation preventing gas injection unit 61 Of course, the present invention may be implemented by controlling the controller to be separated from the polishing controller 64.

상술한 바와 같이 본 발명의 실시예에 따르면, 유지링(32c)의 내표면을 촬상하고 촬상화면에 기초하여 유지링(32c)의 내표면에 웨이퍼손상을 일으키는 손상야기스크래치가 발생했는 지 여부를 판단하고 판단결과 손상야기스크래치가 발생한 경우 웨이퍼연마작업을 중지함으로써, 유지링(32c)의 내표면에 발생한 스크래치에 의해 웨이퍼가 손상되는 것을 방지할 수 있게 된다.As described above, according to the embodiment of the present invention, the inner surface of the retaining ring 32c is imaged, and whether or not a scratch causing scratches on the inner surface of the retaining ring 32c has occurred on the inner surface of the retaining ring 32c. By judging and determining that damage scratch occurs, the wafer polishing operation is stopped, whereby the wafer can be prevented from being damaged by the scratch generated on the inner surface of the retaining ring 32c.

그리고 촬상화면판독부(58)를 통해 촬상카메라(53)의 촬상화면에 기초하여 손상야기스크래치가 발생했는 지 여부를 판단하도록 함으로써, 손상야기스크래치 발생여부를 기계적으로 정확하게 판단할 수 있게 된다.Then, the image pickup screen reader 58 determines whether or not the damage cause scratch has occurred based on the image capture screen of the imaging camera 53, so that it is possible to accurately determine whether the damage cause scratch occurs.

또한 촬상카메라(53)의 각 촬상화면을 구성하는 세로픽셀들의 최대명도값과 최소명도값의 차이를 기준으로 손상야기스크래치가 발생했는 지 여부를 판단하도록 함으로써, 손상야기스크래치 발생여부를 용이하게 판단할 수 있게 된다.In addition, it is possible to easily determine whether or not damage caused scratch scratch occurred by judging whether the damage cause scratch occurred on the basis of the difference between the maximum brightness value and the minimum brightness value of the vertical pixels constituting each image pickup screen of the imaging camera 53. You can do it.

또한 촬상카메라(53)의 각 촬상화면을 구성하는 각 세로픽셀열에 속하는 세로픽셀들 중 연속되는 복수의 세로픽셀들을 하나의 픽셀판독그룹으로 선택할 때 하나의 픽셀판독그룹에 속하는 세로픽셀이 갖고 있는 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖는 세로픽셀열이 존재하고 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖는 세로픽셀열을 명도요건충족픽셀열이라고 하고 최대명도값과 최소명도값의 차이가 미리 설정된 명도차기준값보다 큰 픽셀판독그룹을 갖지 않는 세로픽셀열을 명도요건불충족픽셀열이라고 하고 명도요건충족픽셀열중 명도요건불충족픽셀열이 이어지는 명도요건충족픽셀열을 단일명도요건충족픽셀열이라고 하고 명도요건충족픽셀열중 다른 명도요건충족픽셀열이 이어지는 경우 연속되는 명도요건충족픽셀열들의 집합을 명도요건충족픽셀군이라고 할 때 연속되는 단일명도요건충족픽셀열 상호간의 이격거리, 연속되는 명도요건충족픽셀군 상호간의 이격거리 및 연속되는 단일명도요건충족픽셀열과 명도요건충족픽셀군 사이의 이격거리 중 적어도 어느 하나가 미리 설정된 이격거리기준범위에 속하거나 또는 단일명도요건충족픽셀열과 명도요건충족픽셀군의 개수의 합이 미리 설정된 개수기준범위에 속할 때 손상야기크래치가 발생한 것으로 판단함으로써, 손상야기스크래치 발생여부를 정확하게 판단할 수 있게 된다.In addition, when the plurality of vertical pixels belonging to each vertical pixel column constituting each imaging screen of the imaging camera 53 is selected as one pixel reading group, the maximum of the vertical pixels belonging to one pixel reading group is included. There is a vertical pixel column with a pixel reading group in which the difference between the brightness value and the minimum brightness value is larger than the preset brightness difference reference value, and the vertical pixel having a pixel reading group in which the difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value. A pixel column is called a pixel that satisfies the brightness requirement, and a vertical pixel column that does not have a pixel reading group whose difference between the maximum and minimum brightness values is greater than the preset brightness difference reference value is called a pixel that does not satisfy the brightness requirement. The brightness requirement fulfillment pixel sequence, followed by the lightness requirement fulfillment pixel column, is called the single brightness requirement fulfillment pixel column. In the case of successive pixel brightness satisfying pixel columns, when consecutive sets of brightness satisfying pixel columns are referred to as brightness requirement satisfying pixel groups, successive single brightness requirement satisfying pixel columns are separated from each other. At least one of the separation distance and the distance between successive single brightness satisfying pixel columns and the brightness satisfying pixel groups falls within the preset separation distance reference range, or the sum of the number of single brightness satisfying pixel columns and the brightness satisfying pixel groups. It is possible to accurately determine whether or not the damage latent scratch has occurred by determining that the damage latent scratch occurs when it falls within this preset number reference range.

또한 재연마웨이퍼가 연마과정을 거친 후 웨이퍼인출위치(51b)를 통해 외부로 이송될 때까지 촬상카메라(53)의 촬상동작을 중지시킴으로써, 조명부(54)의 조명에 의해 재연마웨이퍼가 손상되는 것을 방지할 수 있게 된다.In addition, the regrind wafer is damaged by the illumination of the illumination unit 54 by stopping the imaging operation of the imaging camera 53 until the regrind wafer is polished and transferred to the outside through the wafer withdrawal position 51b. Can be prevented.

또한 재연마웨이퍼가 연마과정을 거친 후 웨이퍼인출위치(51b)를 통해 외부로 이송될 때까지 웨이퍼대기위치(51a)로부터 트랜스퍼판(41)으로 웨이퍼가 로딩되지 않도록 함으로써, 재연마웨이퍼를 신속하게 재연마시킬 수 있게 된다.In addition, the regrind wafer is not loaded from the wafer standby position 51a to the transfer plate 41 until the regrind wafer is polished and transferred to the outside through the wafer withdrawal position 51b. You can regrind.

또한 방수하우징(55)으로 촬상카메라(53)를 둘러싸는 한편, 렌즈를 향해 세정가스를 분사하도록 함으로써, 촬상카메라(53)의 촬상화면을 선명하게 할 수 있게 된다.In addition, by enclosing the image pickup camera 53 with the waterproof housing 55 and spraying the cleaning gas toward the lens, the image pickup screen of the image pickup camera 53 can be made clear.

또한 방수하우징(55)으로 촬상카메라(53)를 둘러싸는 한편 방수하우징(55)과 촬상카메라(53)의 사이공간에 결로방지가스를 주입함으로써, 촬상카메라(53)의 촬상화면을 선명하게 할 수 있게 된다.In addition, the condensation prevention gas is injected into the space between the waterproof housing 55 and the imaging camera 53 while enclosing the imaging camera 53 with the waterproof housing 55, so that the captured image of the imaging camera 53 can be made clear. It becomes possible.

11, 111 : 베이스지지체 20, 120 : 연마스테이션
22, 122 : 연마패드 23, 123 : 패드지지판회전구동부
31, 131 : 연마헤드지지체 32, 132 : 연마헤드부
32a, 132a : 헤드바디부 32b, 132b : 멤브레인
32c, 132c : 유지링 33, 133 : 멤브레인흡입팽창부
34, 134 : 헤드지지체회전구동부 35, 135 : 헤드바디부회전구동부 36, 136 : 헤드바디부직선이동구동부
40, 140 : 트랜스퍼스테이션 41, 141 : 트랜스퍼판
43, 143 : 트랜스퍼판직선이동구동부
51, 151 : 웨이퍼교체부 52, 152 : 연마제슬러리공급부
53 : 촬상카메라 54 : 조명부
55 : 방수하우징 56 : 유지링세정가스분사부
57 : 송풍부 58 : 촬상화면판독부
59 : 렌즈세정가스분사부 61 : 결로방지가스분사부
62, 162 : 컨디셔너 63, 163 : 세척수분사부
64, 164 : 연마제어부 65 : 상위제어부11, 111: base support 20, 120: polishing station
22, 122: polishing pad 23, 123: pad support plate rotation drive unit
31, 131: polishing head support 32, 132: polishing head portion
32a, 132a: head body portion 32b, 132b: membrane
32c, 132c: retaining ring 33, 133: membrane suction expansion portion
34, 134: head support rotation drive part 35, 135: head body rotation drive part 36, 136: head body non-linear movement drive part
40, 140: transfer station 41, 141: transfer plate
43, 143: transfer plate linear moving part
51, 151: wafer replacement unit 52, 152: abrasive slurry supply unit
53: imaging camera 54: lighting unit
55: waterproof housing 56: retaining ring cleaning gas injection unit
57: blower 58: imaging screen reader
59 lens cleaning gas injection unit 61 condensation prevention gas injection unit
62, 162: conditioner 63, 163: washing water spray unit
64, 164: polishing control unit 65: upper control unit

Claims

The base support having a support surface, a pad support plate provided on the base support so as to be rotatable with respect to the base support, and a polishing pad provided on the pad support plate so that the upper surface is disposed at a position higher than the support surface and the control signal from the outside. At least one polishing station having a pad support plate rotating driver for rotating the pad support plate, a polishing head support provided on the base support to rotate relative to the base support at a position higher than the polishing pad, and the polishing head support Coupled to the head body portion provided on the polishing head support and the membrane coupled to the bottom surface of the head body portion so as to rotate relative to the support surface and to be linearly moved toward the support surface, and to a lower position than the membrane. With a retaining ring A suction force is applied to the head portion and the membrane so that the membrane is convex toward the polishing head portion in accordance with a control signal from the outside, and the membrane is convex toward the support surface in accordance with a control signal from the outside. Membrane suction expansion unit for applying an expansion force, a head support rotating drive unit for rotating the polishing head support in accordance with a control signal from the outside, and the head body portion is rotated with respect to the polishing head support in accordance with a control signal from the outside A head body non-linear movement driving unit for reciprocating the head body unit between an initial installation position and a wafer polishing position where the wafer is polished by the polishing pad according to a control signal from the outside; Installed side by side on the support surface Reciprocating the transfer plate between the transfer plate installed on the base support and the wafer transfer position from which the wafer is transferred from the transfer plate to the head body in accordance with a control signal from the outside so as to move linearly along the falling direction. A transfer station having a transfer plate linear moving driver, and unloading the wafer from the transfer plate to a predetermined wafer withdrawal position in accordance with a control signal from the outside, and transferring the wafer from the predetermined wafer standby position according to a control signal from the outside. A wafer replacement portion for loading a wafer into the wafer, an abrasive slurry supply portion for supplying an abrasive slurry to an upper surface of the polishing pad according to a control signal from the outside, and a wafer at the wafer standby position of the transfer plate, the membrane, and the transfer. Net plate The wafer is replaced by the polishing pad while the wafer is transferred to the membrane, and the polishing slurry is supplied to the polishing pad while the wafer is being polished by the polishing pad. Negative unloading operation and loading operation, pad support plate rotation operation of the pad support plate rotation driving unit, grinding head support rotation operation of the head support rotation driving unit, head body rotation operation of the head body rotation driving unit, linear movement of the head body A chemical-mechanical wafer polishing apparatus having a polishing control section for controlling a head body non-linear movement of a drive unit, an abrasive slurry supply operation of the abrasive slurry supply unit, and a transfer plate linear movement operation of the transfer plate linear movement drive unit.
When the head body portion is disposed on the upper side of the transfer plate, it is installed on the base support so that the retaining ring imaging area can be set on the inner surface of the retaining ring, and the inner surface of the retaining ring is controlled in accordance with a control signal from the outside. An image pickup camera that continuously captures images along the circumferential direction, and is installed on the base support so as to illuminate the holding ring image pickup area when the head body portion is disposed above the transfer plate and according to a control signal from the outside. Retaining ring cleaning gas nozzles provided on the base support so as to inject a cleaning gas toward the retaining ring photographing area when the illumination unit illuminates toward the retaining ring photographing area and the head body is disposed above the transfer plate. Cleaning gas toward the holding ring image area according to a control signal from the outside. And an air blowing area between the retaining ring photographing area and the lens of the imaging camera when the retaining ring cleaning gas injection part and the head body part are disposed above the transfer plate, and are installed on the base support. A blowing unit for blowing toward the blowing area in accordance with a control signal of a;
The polishing control unit may include the lighting unit between an unloading end point at which the unloading operation of the wafer replacement unit is terminated and a loading start point at which the loading operation of the wafer replacement unit starts when the head body is disposed above the transfer plate. Illumination operation of the lighting unit to illuminate the retaining ring photographing area, the retaining ring cleaning gas injection unit sprays cleaning gas toward the retaining ring photographing area, and the blower blows toward the blowing area, and the retaining ring cleaning gas injection And controlling the blowing operation of the air blowing unit and the blowing unit, and performing the lighting operation by the lighting unit, the spraying operation by the holding ring cleaning gas injection unit, and the blowing operation by the blowing unit. The imaging camera to control the wafer and causing wafer damage to the inner surface of the retaining ring. When the polishing stop signal indicating that the scratch causing damage has been input from the outside, the operation of loading the wafer from the wafer stand-by position to the transfer plate is stopped, and polishing operation on the wafer adsorbed to the membrane is performed. The wafer replacement portion, the pad support plate rotation drive portion, the head support rotation drive portion, the head body portion rotation drive portion, the head body nonlinear movement drive portion, so that all wafers being polished to the wafer withdrawal position are sequentially unloaded. The wafer replacement part, the pad support plate rotation drive part, the head support rotation drive part, the abrasive slurry supplying part and the transfer plate linear moving drive part are controlled, and all wafers being polished from the transfer plate to the wafer withdrawal position are unloaded. Head body rotation A chemical mechanical wafer polishing apparatus, characterized in that the control operation for the drive unit, the head body non-linear drive unit, the abrasive slurry supply unit and the transfer plate linear drive unit is stopped.

The method of claim 1,
An image pickup screen reading unit configured to generate the polishing stop signal based on the image pickup screen of the image pickup camera and transmit the signal to the polishing control unit;
And the imaging camera transfers an imaging screen to the imaging screen reading unit.

3. The method of claim 2,
The imaging screen reader has a plurality of vertical pixels belonging to one pixel reading group when selecting a plurality of vertical pixels consecutively among the vertical pixels belonging to each vertical pixel column of the imaging camera as one pixel reading group. And if the difference between the maximum brightness value and the minimum brightness value is greater than a predetermined brightness difference reference value, generates the polishing stop signal and transmits the polishing stop signal to the polishing control unit.

3. The method of claim 2,
The imaging screen reader has a plurality of vertical pixels belonging to one pixel reading group when selecting a plurality of vertical pixels consecutively among the vertical pixels belonging to each vertical pixel column of the imaging camera as one pixel reading group. There is a vertical pixel column having a pixel reading group in which the difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value, and the pixel reading group in which the difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value. The vertical pixel column having is a brightness satisfying pixel column, and the vertical pixel column having no pixel reading group whose difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value is called the brightness lacking pixel column. The lightness requirement fulfillment pixel column, followed by the lightness requirement nonconforming pixel column, is called a single lightness requirement pixel column. In the case where another brightness requirement fulfillment pixel sequence is continued among the brightness requirement fulfillment pixel columns, when a set of consecutive brightness requirement fulfillment pixel columns is referred to as a brightness requirement fulfillment pixel group, a continuous distance between the single brightness requirement fulfillment pixel columns is continuous. The polishing agent generates the polishing stop signal when at least one of the separation distance between the brightness requirement satisfying pixel groups and the continuous single brightness requirement pixel array and the separation distance between the brightness requirement satisfying pixel groups falls within a preset separation distance reference range. A chemical mechanical wafer polishing apparatus, characterized in that the transfer to the fisherman.

3. The method of claim 2,
The imaging screen reader has a plurality of vertical pixels belonging to one pixel reading group when selecting a plurality of vertical pixels consecutively among the vertical pixels belonging to each vertical pixel column of the imaging camera as one pixel reading group. There is a vertical pixel column having a pixel reading group in which the difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value, and the pixel reading group in which the difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value. The vertical pixel column having is a brightness satisfying pixel column, and the vertical pixel column having no pixel reading group whose difference between the maximum brightness value and the minimum brightness value is larger than the preset brightness difference reference value is called the brightness lacking pixel column. The lightness requirement fulfillment pixel column, followed by the lightness requirement nonconforming pixel column, is called a single lightness requirement pixel column. In the case where another brightness requirement fulfillment pixel sequence is continued among the lightness requirement fulfillment pixel sequences, a continuous set of lightness requirement fulfillment pixel columns is referred to as a lightness requirement fulfillment pixel group. And generating the polishing stop signal and transmitting the polishing stop signal to the polishing control unit when the sum is within a preset number reference range.

The method according to any one of claims 1 to 5,
The polishing control unit receives the regrind wafer supplied to the wafer standby position when a regrind wafer signal indicating that the regrind wafer, which means the wafer to be polished again after the primary polishing process is supplied to the wafer standby position, is input. And the imaging camera is controlled to stop the imaging operation of the imaging camera until it is transported to the outside through the wafer withdrawal position after the polishing process.

The method according to claim 6,
The polishing station is plural;
The polishing control unit performs the wafer polishing operation on the regrind wafer only once by any one of the polishing stations when a regrind wafer signal indicating that the regrind wafer is supplied to the wafer standby position is input from the outside. A pad support plate rotation operation of the pad support plate rotation driving unit, a polishing head support rotation operation of the head support rotation driving unit, a head body rotation operation of the head body rotation driving unit, a head body nonlinear movement operation of the head body nonlinear driving unit, and And a polishing slurry supplying operation for controlling the polishing slurry supplying portion.

The method according to any one of claims 1 to 5,
And a waterproof housing surrounding the imaging camera and a lens cleaning gas nozzle installed on the base support to spray cleaning gas toward the lens of the imaging camera, toward the lens of the imaging camera according to a control signal from the outside. It further comprises a lens cleaning gas injection unit for injecting a cleaning gas;
Wherein the polishing control unit controls the injection operation of the lens cleaning gas injection unit to inject the cleaning gas toward the lens of the imaging camera before the unloading end of the unloading operation of the wafer replacement unit is completed. Polishing device.

The method according to any one of claims 1 to 5,
And a condensation prevention gas injection unit for injecting a condensation prevention gas into a space between the waterproof housing and the image pickup camera according to a control signal from the outside.
The polishing control unit is a chemical mechanical wafer polishing apparatus, characterized in that for controlling the injection operation of the condensation prevention gas injection unit to inject condensation prevention gas into the space between the waterproof housing and the imaging camera.