KR101321533B1 - In-line nano patterning apparatus and anti-reflective substrate nano-patterned by the apparatus - Google Patents

Abstract

PURPOSE: An in-line nano patterning apparatus and an anti-reflective substrate manufactured by the same are provided to realize a nano mask in a sputtering mode and to sequentially implement an etching process in an in-line mode. CONSTITUTION: An in-line nano patterning apparatus includes a load lock chamber (10), a sputter chamber (20), an etch chamber (30), and an unload lock chamber (40). In the process, a substrate is put into the load lock chamber as a workpiece. The substrate ejected from the load lock chamber is put into the sputter chamber in order to form a nano mask on the surface of the substrate in a sputtering mode. The substrate with the nano mask on the surface is put into the etch chamber in order to etching the surface of the substrate, thereby forming a nano pattern. The unload lock chamber ejects the substrate with the nano pattern to the outside. The substrate which is put into the load lock chamber is ejected from the unload lock chamber. [Reference numerals] (AA) Progress direction of process

Description

In-line Nano Patterning Apparatus And Anti-reflective Substrate Nano-patterned By The Apparatus}

The present invention relates to a nano-patterning coating technology on the surface of the substrate, and more particularly to an in-line nano patterning device for imparting antireflection function by nano patterning to the surface of the substrate and The present invention relates to an antireflective substrate manufactured using.

A display using a touch function such as a mobile phone, a tablet PC, a cover window of a flat panel display such as a TV or a computer monitor, a cover window of a solar cell, an external glass of a building, AR (Anti-Reflection) technology that enhances efficiency and increases visibility is a technology field that is currently receiving high interest in academia and industry.

In general, when there is a refractive index difference between two media at the light-transmitting interface, reflection phenomenon of light occurs by the "Fresnel's reflection law". The extent to which light is reflected is determined by the "reflectivity" which varies with the difference in refractive index between the two media, the angle of incidence and the angle of reflection.

In particular, when the display device is used in a situation where the external light intensity is large, such as in an outdoor environment, visibility is very low because light reflected by the inside of the display device is reflected by a small reflectance. In addition, in the case of the solar cell cover window, the efficiency of the solar cell increases as the transmittance of the sunlight increases, so that the technical problem of reducing the reflection is required.

On the other hand, when glare due to reflection occurs in the exterior glass of the building or the automobile glass, there is a problem that the safety of the pedestrian and the driver is directly connected to each other.

In order to achieve the object of suppressing the reflection on the substrate surface as described above, the surface of the substrate is coated with a material having a refractive index between the thickness of? / 4 and the refractive index of air and the substrate with respect to the wavelength? Of the incident light Reflections can be reduced. This coating technique is called anti-reflection (AR) coating technology.

However, this technique can suppress the reflection only for a specific wavelength λ, and therefore, it is necessary to coat the multilayer thin film because an antireflection layer for various wavelengths is required in order to realize reflection prevention over the entire visible light range. As a result, peeling due to the weak adhesion to the substrate, resulting in color unevenness due to surface unevenness, and thickness control depending on the multilayer thin film, arise. For this reason, the antireflection technique using a multilayer thin film coating has a limitation that it is difficult to apply to a surface with frequent contact such as a touch panel.

In recent years, research has been attracting attention as a technique for implementing antireflection, which uses a so-called "moth-eye effect" technique, in which nano-protrusions having a diameter smaller than that of a visible light wavelength band are formed on the surface of a substrate, Layered thin film coating by recognizing that the refractive index of the substrate surface is gradually changed according to the shape of the protrusion without recognizing the presence of the nano protrusion when the surface of the nanostructure is formed.

Regarding the technology for forming such nanoprotrusions on the surface of the substrate, the present inventors control the thermal aggregation of low-melting-point metals and use them as etching masks to etch them to produce anti-reflective surfaces in the form of mixed nano / microscale protrusions. And the substrate (patent application No. 2012-0131676) on which the antireflective surface is formed and the type of metal forming the nano mask, the deposition time, the deposition temperature, and the like in the single or multiple chambers by controlling the method of CVD or PVD. After forming the mask, a method (patent application 2013-0063913) and the like to form a nano-protrusions of various sizes on the surface of the base material through an etching process.

However, the conventional anti-reflective technology including the above-described invention has problems such as low production yield and inefficiency of equipment installation space, and due to the absence of technology for controlling the process in real time, process stability, uniformity and There was a difficulty in ensuring reproducibility.

The present invention was devised to solve the above-described problems, and an object of the present invention is to fabricate a nanomask by sputtering without using an expensive photo process, and subsequently to an etching process. By performing the in-line method, to provide an in-line nano patterning device and an anti-reflection substrate manufactured using the same, which can improve productivity as well as save space required for equipment installation.

In the nano-patterning apparatus for forming a nano-pattern on the surface of the substrate in accordance with an embodiment of the present invention in order to achieve the object as described above, the load lock chamber 10, the substrate being a workpiece is introduced into the process, A substrate discharged from the load lock chamber 10 is introduced, a sputter chamber 20 for forming a nano mask on the surface of the substrate by sputtering, a substrate having a nano mask formed on the surface thereof, and a substrate An etch chamber 30 for etching the surface to form a nano pattern, and an unload lock chamber 40 for discharging the nano patterned substrate to the outside of the device, wherein the chambers are connected to one in-line facility. And the substrate introduced into the load lock chamber 10 is continuously discharged from the unload lock chamber 40 through the sputter chamber 20 and the etch chamber 30. Provides an inline nano patterning device.

In this case, the in-line facility is a substrate transfer means 100 for transferring the substrate between or within the chamber drive means for driving the substrate transfer means, sensing means for detecting the position of the substrate on the substrate transfer means and the detection means Preferably it comprises a control means for controlling the drive means through the detection of.

In addition, the substrate transfer means 100 includes a support member 110 and a heating means for adjusting the temperature of the substrate, the substrate is a workpiece to be positioned on the upper, when the support member 110 is opaque It is preferable that a plurality of holes 111 are formed in a predetermined region of the support member 110.

And in order to control the process time of the load lock chamber 10, the sputter chamber 20, the etch chamber 30 and the unload lock chamber 40 and to prevent contamination due to mixing of the process gas between the chambers One or more buffer chambers 50 may be provided, or a process having a relatively long tact time in consideration of a tact time of each chamber may be driven by connecting two or more chambers in parallel.

In addition, a sputtering process on the surface of the substrate in the sputter chamber 20 may be performed while the sputter target is moved.

Meanwhile, in-situ monitoring devices 60 and 70 may be further included in the sputter chamber 20 or the etch chamber 30 to control the stability and reproducibility of the process. 60 and 70 include one or more light sources 61 and 71 that irradiate light onto the surface of the substrate as a work piece; And detectors 62 and 72 which monitor the intensity of light emitted from the light source and transmitted or reflected on the substrate in real time.

In this case, the light receiving unit 90 may be provided on a wall of the chamber in a predetermined region of the chamber in which the light sources 61 and 71 or the detectors 62 and 72 are installed. 90 is provided at the interface between the inside and the outside of the chamber to receive the light emitted from the light sources (61, 71) or the light transmitted or reflected on the substrate 91 and the chamber from the light sources (61, 71) It may include a light guide 92 for monitoring the light transmitted or reflected on the substrate without noise by improving the straightness of the light emitted therein, or by minimizing interference by other light.

In this case, the light guide 92 may be installed between the window 91 and the light sources 61 and 71 or between the window 91 and the detectors 62 and 72.

Meanwhile, a plurality of detectors 62 and 72 and light sources 61 and 71 may be installed in the horizontal and vertical directions of the substrate depending on the size of the entire process, the size of the equipment, and the size of the substrate to be processed.

In addition, in the in-situ monitoring device 60 installed in the sputter chamber 20 is irradiated from the light source 61 to the surface of the substrate to be processed in order to control the size and distribution of the nano mask formed on the surface of the substrate The intensity of light transmitted or reflected on the substrate is monitored in real time through the detector 62.

In this case, in order to form nanomasks having different sizes and distributions, it is preferable to control the process by analyzing the difference in intensity of light transmitted from the light source to the surface of the substrate and transmitted or reflected on the substrate over the entire wavelength range. Analyzing the difference in the intensity of light transmitted or reflected by the substrate in the short wavelength region and the long wavelength region based on the wavelength of 500 ~ 550 nm.

Meanwhile, in the in-situ monitoring device 70 installed in the etch chamber 30, the substrate is irradiated from the light source 71 to the surface of the substrate to be processed in order to monitor and control the progress of etching of the surface of the substrate. The spectrum of the light transmitted or reflected by the detector 72 is characterized in that the monitoring in real time.

In this case, in the case of using a transparent substrate as a workpiece, the light source 71 is a plasma 31 used for etching in the etch chamber 30, and is incident on the surface of the substrate after being incident from the plasma 31 to the substrate. By scattering by the formed nano-pattern and the bottom surface of the substrate is characterized in that for measuring the spectrum of the light emitted to one side of the substrate through the detector 72.

In addition, in order to ensure the stability and reproducibility of the plasma 31, the in-situ plasma monitoring device 80 for monitoring the spectrum of the light emitted from the plasma light source 71 through the detector 81 may be further included. .

In this case, a light receiving unit 90 may be provided on a wall of the chamber in a predetermined region of the chamber in which the detector 81 is installed, and the light receiving unit 90 may be formed inside and outside the chamber. The light guide for monitoring the light emitted from the plasma 31 without noise by minimizing interference by the window 91 and other light is provided at the interface of the receiving light emitted from the plasma 31 (92). In this case, the light guide 92 is preferably installed between the window 91 and the detector 81.

In addition, a plurality of detectors 81 of the in-situ plasma monitoring apparatus 80 are installed in the horizontal and vertical directions of the substrate according to the size of the entire process, the size of the equipment, and the size of the substrate to be processed. In the height direction between the anode (anode) and the cathode (cathode), it is preferable that a plurality is installed to monitor the entire volume of the plasma in real time.

In order to achieve the object as described above is manufactured using the above-described inline nano-patterning device according to an embodiment of the present invention, nano-scale projections for implementing anti-reflection (AR) on the surface of the substrate Provided is an antireflection substrate formed.

At this time, the nano-scale projections are preferably formed in a form in which the projections of at least any one or more of the size range of 50 to 150 nm, 150 to 300 nm, 300 to 1000 nm and 1000 nm or more size ranges are mixed. The nano protrusions of the in-situ monitoring device 70 and the in-situ plasma monitoring device 80 in the sputter chamber 20 control the size and distribution of the nano mask using the in-situ monitoring device 60 and the etch chamber 30. It is characterized in that it is formed through the etching control of the substrate surface using the).

As described above, the inline nano patterning device of the present invention and the anti-reflection substrate manufactured by using the same include the following methods: ① Batch-type nano patterning device is operated in an in-line type to increase the yield of product production and The space required for installation can be saved, and ② the real-time monitoring of the status of each process can be carried out to optimize the process for mass production and economic feasibility, and ③ the in-line of the anti-reflection (AR) treatment process. Implementing and internalizing in-situ monitoring for each process can improve process stability, uniformity and reproducibility.

1 is a schematic diagram of an inline nano patterning device according to an embodiment of the present invention.
FIG. 2 is a schematic diagram illustrating a state in which a substrate is positioned on an upper portion of the substrate transfer means 100 provided with an opaque support member 110 in which a plurality of holes 111 are formed.
3 is a schematic diagram illustrating the in-situ monitoring by the light transmission through the hole 111 formed when the opaque support member 110 is provided.
4A is a schematic diagram showing the appearance of the nano-mask formed by the sputtering in the sputter chamber 20 and the in-situ monitoring device 60 installed in the sputter chamber 20 and the monitoring method thereby.
FIG. 4B is a schematic view of a light receiving portion 90 including a window 91 provided at an inner and outer boundary surfaces of a chamber and a light guide 92 provided in a direction inside and outside the chamber of the window 91.
FIG. 5 is a table showing antireflection properties of a substrate that varies with protrusions of various size ranges. FIG.
6 is a graph showing the transmittance of a substrate having a mask having the same distribution but different sizes. D1, D2, and D3 mean substrates having nanomasks of type 1, type 2, and type 3 protrusions in the table shown in FIG. 5, respectively.
7A is a graph showing transmittance of a substrate on which masks having different distributions and sizes are formed. D1, D2 and D3 are the same as described above, and the enlarged graph in the region (Region (I)) having a wavelength lower than that of the reference wavelength 500 to 550 nm is shown in FIG. The enlarged graph in)) is FIG. 7C.
8 is a schematic diagram representing a state and a monitoring method of the in-situ monitoring device 70 installed in the etch chamber 30.
9 is a schematic diagram showing the principle of monitoring the degree of etching of the substrate by the in-situ monitoring device 70 installed in the etch chamber 30.
FIG. 10 is a spectrum of monitoring the intensity of light measured by the detector 72 of the in-situ monitoring device 70 in the pre-etching step, the intermediate step, and the finishing step of FIG. 9.
11 is a schematic diagram showing the state of the etch chamber 30 equipped with the in-situ plasma monitoring device 80.
FIG. 12 is a graph showing the spectrum of light emitted from the plasma 31 light source measured by the in situ plasma monitoring apparatus 80.
FIG. 13: is a schematic diagram which shows the installation direction of the in situ plasma monitoring apparatus 80, and shows the horizontal direction and the longitudinal direction of a board | substrate, and the height direction between the anode and cathode of the plasma 31. As shown in FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. Prior to the description, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary meanings and should be construed in accordance with the technical concept of the present invention.

First, the present invention is a nano-patterning apparatus for forming a nano-pattern on the surface of the substrate according to a preferred embodiment, the load lock chamber 10, the load lock chamber 10 is a substrate to be processed is introduced into the process A substrate discharged from the substrate is injected, a sputter chamber 20 for forming a nano mask on the surface of the substrate by sputtering, a substrate on which a nano mask is formed is introduced, and the surface of the substrate is etched to form a nano pattern. And an unload lock chamber 40 for discharging the substrate having the nano-pattern formed thereon to the outside of the device, wherein the chambers are connected to one in-line facility so that the load lock chamber ( 10) the in-line nano patterning field, characterized in that the substrate is continuously discharged from the unload lock chamber 40 via the sputter chamber 20 and the etch chamber 30. It provides.

As shown in FIG. 1, the basic configuration of the above-described inline nano patterning device is a load lock chamber, a sputter chamber, an etch chamber, and an unload lock chamber. .

Through this device, the surface processing of the substrate proceeds in the order of the sputter process for forming the nano mask and the etching process for etching the substrate, and the mass production of the substrate for reflection prevention (AR) is introduced by introducing an inline facility to continuously perform the process. Can be secured. However, the above-described inline nano patterning device is not limited to the processing of the substrate for implementing the anti-reflection surface, and may be applied to the substrate surface processing technology through various nano patterning.

In-line equipment for inlining the chambers is basically a substrate transfer means for transferring the substrate between or within the chamber, the driving means for driving it, the sensing means for detecting the position of the substrate on top of the substrate transfer means; Control means for controlling the drive means through the detection of the sensing means.

On the substrate transfer means 100, the support member 110 is provided in a predetermined region where the substrate is located, and there is a heating means for controlling the temperature of the substrate by heating the substrate. In this case, the support member 110 may use a transparent material or an opaque material. In the case of using the support member 110 of the opaque material, the support member 110 may be used at one side of the substrate in the in-situ monitoring device to be described later. Since the light transmitted through the substrate cannot be received by the detector installed on the opposite side, a plurality of holes 111 are formed in a predetermined region of the opaque support member 110 to receive the light transmitted through the detector. It should be. A schematic diagram of this is shown in FIGS. 2 and 3.

On the other hand, it is preferable to provide one or more buffer chambers 50 between the chambers between the chambers in order to stabilize the process, to control the process time, to prevent contamination by mixing the process gas. In addition, the chamber corresponds to a process with a longer tact time when the tact time, i.e., between the sputter chamber and the etch chamber, differs in the time required to produce one product in order to achieve the required production target. By connecting two or more identical chambers in parallel to drive the process, the efficiency of the inline process can be maximized.

In addition, the conventional sputtering process on the surface of the substrate in the sputter chamber 20 takes the form of moving the substrate inside the chamber, but the present invention is a sputter target in the chamber according to a preferred embodiment ( Sputtering may be performed while the sputter target is moved.

As in the conventional method, sputtering may be performed while the substrate is moved inside the chamber through the substrate transfer means 100, but as described above, the sputtering process is performed on the surface of the substrate while the sputter target is not moving. If it is, the size of the sputter chamber 20 is reduced to increase the space utilization. A schematic diagram of this is shown in FIG. 4A.

The sputter chamber 20 or the etch chamber 30 may further include an in-situ monitoring device 60, 70 for monitoring the process status in real time in the process to control the stability and reproducibility of the process. Can be. This can optimize the process by identifying the degree of sputtering or etching in real time to improve product productivity.

At this time, the in-situ monitoring device (60, 70) of the present invention is irradiated from the light source and the one or more light sources (61, 71) for irradiating light to the surface of the substrate to be processed according to a preferred embodiment is transmitted to the substrate or The detectors 62 and 72 may be configured to receive light reflected from a surface and monitor light intensity in real time.

In addition, the light receiving unit 90 may be provided on a wall of the chamber in a predetermined area outside the chamber in which the light sources 61 and 71 or the detectors 62 and 72 are installed. The unit 90 is provided at the interface between the inside and the outside of the chamber and is emitted from the window 91 and the light sources 61 and 71 for receiving the light emitted from the light sources 61 and 71 or the light transmitted or reflected on the substrate. A light guide 92 may be included for monitoring the light transmitted or reflected on the substrate without noise by improving the linearity of the light or minimizing interference by other light.

In this case, the light guide 92 may be installed between the window 91 and the light sources 61 and 71 or between the window 91 and the detectors 62 and 72. In addition, the light guide 92 may be disposed in the chamber inward direction of the window 91. It is more preferable to install. A schematic diagram of this is shown in FIG. 4B.

The window 91 is provided on the wall surface of the chamber which is a boundary between the outside and the inside of the chamber, and is preferably composed of optical glass or lens having high transmittance to light, and in order to maintain the strength as the wall surface of the vacuum chamber. It is preferred to have a thickness of 10-30 mm.

In addition, the light guide 92 guides the light received through the window 91 to the detectors 62 and 72 without loss in order to minimize noise by reducing interference by light other than the light to be monitored. Do this. To this end, it is preferable to take the form of a slit or a hole, and according to an embodiment, a material such as an optical fiber may be borrowed.

On the other hand, as the detectors 62 and 72, various optical analyzers may be used depending on the use purpose or purpose of measuring a change in relative light transmittance or measuring a spectrum of an optical wavelength. As a preferred embodiment, an optical emission spectroscopy (OES) or a spectrophotometer for measuring transmittance / reflection may be borrowed.

In addition, it is preferable that a plurality of detectors 62 and 72 and light sources 61 and 71 be provided in the horizontal and vertical directions of the substrate according to the size and size of the entire process and the size of the substrate to be processed. This increases the accuracy of the monitoring and allows you to observe or control uniformity.

Hereinafter, the in-situ monitoring device 60 provided in the sputter chamber 20 will be described. A schematic diagram of this is shown in FIG. 4A. In the sputter chamber 20, a nano mask is formed on a surface of a substrate by a sputtering method, and the in-situ monitoring device 60 may be used to control the size or distribution of the nano mask to be formed.

The antireflection property is different depending on the size or distribution of the nano protrusions formed by forming a nano pattern on the surface of the substrate or by depositing a nano mask. Referring to the table shown in FIG. 5, the protrusion of the size 50-150 nm is the first type protrusion D1, the protrusion of the size 150-300 nm is the second type protrusion D2, and the protrusion of the size 300-1000 nm is the third type protrusion. (D3) When a projection having a size of 1000 nm or more is referred to as a fourth type projection (D4), the larger the size of the projection, the longer the wavelength of transmitted light is exhibited.

In addition, referring to FIG. 6, when the nanomasks having the same distribution but having various sizes of the D1 to D2 shapes are formed on the surface of the substrate, a difference in transmittance of light passing through the substrate may be seen. When 550 nm is the reference wavelength, the transmittance of the substrate on which the D1 protrusion is formed is 46%, D2 is 38%, and D3 is 35%.

The nanomask is formed on the surface by a sputtering process, as shown in FIG. 4A, by using a property of changing the intensity of light transmitted or reflected according to a difference in the size or distribution of the nanomask formed on the surface of the substrate as described above. The nanomask formed on the surface of the substrate by irradiating the light emitted from the light source 61 to the formed substrate and receiving the light transmitted or reflected on the substrate in the detector 62 disposed at various angles and analyzing the change in spectrum or transmittance. You can control the size and distribution of.

In this case, it is desirable to analyze the difference in light intensity over the entire wavelength range, and more effectively by setting the wavelength of 500 to 550 nm as the reference wavelength and analyzing the difference in the intensity of light transmitted or reflected by the substrate in the short wavelength region and the long wavelength region. The process can be controlled.

As shown in FIGS. 7A to 7C, in the case of a substrate on which a nano mask having a size D1 to D2, which is relatively small, is formed, a region (I That is, although the transmittance is higher in the short wavelength region, the transmittance is lower in the region (II), that is, the longer wavelength region.

On the other hand, when a transparent substrate is used as a work piece, all the light transmitted or reflected on the substrate exists so that the difference in intensity of light can be analyzed at various angles. Since there is no light, the process must be controlled by analyzing the spectrum of light reflected off the substrate.

Hereinafter, the in-situ monitoring device 70 provided in the etch chamber 30 will be described. A schematic diagram of this is shown in FIG. 8. In the etch chamber 30, the nanopattern is formed by etching the surface of the substrate using the nanomask formed on the surface of the substrate in the sputter chamber 20. At this time, the in-situ monitoring device 70 is utilized to optimize the process and secure mass production by monitoring the degree of etching progress in real time and controlling the process based on the process.

When the nano protrusions are formed on the surface of the transparent substrate, light flowing into the side surface of the substrate is scattered by the nano protrusions, thereby obtaining a transparent substrate having surface emission characteristics. The present applicant has filed a patent application on the surface-emitting transparent substrate resulting from the formation of the nano-projections. It was conceived that when light is emitted from the side of the substrate, light is emitted to the side of the substrate, and the change in the spectrum or transmittance of the emitted light is measured / analyzed through the detector 72 of the in situ monitoring device 70 in real time. It is possible to effectively control the process performed in 30).

More specifically, as shown in FIGS. 9 and 10, the greater the degree of etching of the surface of the substrate, the greater the amount of light scattered according to the nano-protrusions, thereby increasing the amount of light emitted from the side of the substrate. By using such a characteristic, the progress of the etching process may be analyzed to effectively control the etching process by analyzing the intensity of the plasma spectrum emitted from the side of the substrate.

However, referring to FIG. 8, in the case of the etching process using the plasma 31, an anode and a cathode are positioned close to each other with a substrate therebetween to form the plasma 31, so that a separate light source is used. In this case, it is difficult to effectively radiate light over the entire surface of the substrate, which makes it difficult to measure the overall uniformity. In order to solve this problem, the anode and the cathode itself may be specially processed (for example, having a hole-shaped separation part for passing light through the anode and the cathode, as shown in FIG. 8), or the angle of incidence between the anode and the cathode. Providing a separate device for securing is a problem of efficiency and economics.

Therefore, in order to solve such a problem, the light emitted from the plasma 31 to the substrate by using the plasma 31 itself generated for etching in the etch chamber 30 as a light source of the in-situ monitoring device 70 is applied to the surface of the substrate. Monitoring as described above may be implemented by measuring / analyzing in real time through the detector 72 that is scattered by the nano-pattern formed in the substrate and the bottom surface of the substrate and emitted to the side.

In this case, unlike using a separate light source, since the plasma 31 itself is used as a light source, in order to secure stability and reproducibility of the plasma light source, the spectrum of the light emitted from the plasma light source according to an exemplary embodiment of the present invention is used. It may further include an in-situ plasma monitoring device 80 for monitoring through the detector 81. 11 shows an in situ plasma monitoring device 80 provided in the etch chamber.

By monitoring the plasma light source as described above, it is possible to control the reaction particles required for etching the substrate and maintain a stable plasma state. For example, when the CHF ₃ , Ar, O 2 gas is used in the etching process, the etching process may be effectively controlled by monitoring the light emitted from F, Ar, O, H, etc. present in the plasma. Referring to FIG. 12, the spectrums of Ar (450.9 nm), H (486.4 nm), F (685.2 nm), O (715.6 nm), and N (388.5 nm), which are the main wavelengths of light emitted from the plasma light source, can be monitored. do.

Meanwhile, the light receiving unit 90 may be provided on a wall surface of the chamber in a predetermined area outside the chamber in which the detector 81 is installed. According to a preferred embodiment, the light receiving unit 90 may be formed in the chamber. Light for monitoring the light emitted from the plasma 31 without noise by minimizing interference by the window 91 and other light provided at an external interface to receive the light emitted from the plasma 31. Guide 92 may be included.

In this case, the light guide 92 is preferably installed between the window 91 and the detector 81, and more preferably, is installed in the chamber inner direction of the window 91. A schematic diagram of this is shown in FIG. 4B.

The window 91 is provided on the wall surface of the chamber which is a boundary between the outside and the inside of the chamber, and is preferably composed of optical glass or lens having high transmittance to light, and in order to maintain the strength as the wall surface of the vacuum chamber. It is preferred to have a thickness of 10-30 mm.

In addition, the light guide 92 guides the light received through the window 91 to the detector 81 without loss in order to minimize interference by light other than the light emitted from the plasma 31 to minimize noise. Do this. To this end, it is preferable to take the form of a slit or a hole, and according to an embodiment, a material such as an optical fiber may be borrowed.

In addition, the detector 81 of the in-situ plasma monitoring apparatus 80 has a horizontal direction and a longitudinal direction of the substrate and a height direction between the anode and the cathode of the plasma 31 according to the size, size of the entire process, and the size of the substrate to be processed. By installing a plurality in the x, y, z direction of Figure 13 it is possible to increase the accuracy of the monitoring and control the overall uniformity.

On the other hand, when a transparent substrate is used as a workpiece, the spectrum of light emitted from the side of the substrate can be analyzed. However, when an opaque substrate is used as the workpiece, there is no light transmitted through the substrate and emitted to the side. The process should be controlled by analyzing the intensity of the light reflected on the substrate. Therefore, in this case, a separate device and a separate light source must be provided between the anode and the cathode to secure an incident angle to analyze the intensity of the reflected light. As described above, a schematic diagram thereof is shown in FIG. 8.

The present invention provides an anti-reflective substrate prepared by using the in-line nano patterning device as described above according to a preferred embodiment and formed with nano-scale protrusions on the surface of the substrate to implement anti-reflection.

The nano-scale protrusions may be formed in a form in which protrusions of at least one or more size ranges of the above-described D1 to D4 size ranges are mixed according to a preferred embodiment, thereby realizing anti-reflection in a wide range of wavelengths. Will be.

In order to form a structure in which the projections of various sizes are mixed, the size and distribution of the nanomasks formed on the surface of the substrate are controlled using the in-situ monitoring device 60 in the sputter chamber 20 as described above. In addition, the in-situ monitoring device 70 and the in-situ plasma monitoring device 80 in the etch chamber 30 may be used to control the degree to which the reaction particles of the plasma and the surface of the substrate are etched.

The present invention is not limited to the above-described specific embodiment and description, and various changes and modifications may be made by those skilled in the art without departing from the scope of the present invention as claimed in the claims. And such modifications are within the scope of protection of the present invention.

10: Load Lock Chamber
20: Sputter Chamber
30: Etch Chamber
31: plasma
40: Unload Lock Chamber
60: in-situ monitoring device installed in the sputter chamber 20
61: a light source installed in the sputter chamber 20
62: a detector installed in the sputter chamber 20
70: in-situ monitoring device installed in the etch chamber 30
71: a light source installed in the etch chamber 30
72: a detector installed in the etch chamber 30
80: in-situ plasma monitoring device installed in the etch chamber 30
81: a detector installed in the etch chamber 30
90: light receiving portion provided on the chamber walls of the sputter chamber 20 and the etch chamber 30
91: window provided in the light receiving portion 90
92: a light guide provided in the light receiving portion 90
100: substrate transfer means
110: Support member
111: hole

Claims (24)

In the nano patterning device for forming a nano pattern on the surface of the substrate,
A load lock chamber 10 into which a substrate to be processed is introduced into a process;
A sputter chamber 20 into which a substrate discharged from the load lock chamber 10 is introduced, and forms a nanomask on a surface of the substrate by a sputtering method;
A etch chamber 30 into which a nanomask is formed on a surface thereof, and etching the surface of the substrate to form a nanopattern; And
An unload lock chamber 40 for discharging the substrate on which the nanopattern is formed to the outside of the device;
Including;
The chambers are connected to one in-line facility so that the substrate introduced into the load lock chamber 10 is continuously passed through the sputter chamber 20 and the etch chamber 30 in the unload lock chamber 40. In-line nano patterning device, characterized in that the discharge. The method of claim 1,
The inline facility,
Substrate transfer means (100) for transferring a substrate between or within the chambers;
Drive means for driving the substrate transfer means;
Sensing means for sensing a position of the substrate on the substrate transfer means; And
Control means for controlling the driving means through sensing of the sensing means;
Inline nano-patterning device comprising a. 3. The method of claim 2,
The substrate transfer means 100,
A support member 110 on which a substrate to be processed is positioned; And
Heating means for controlling the temperature of the substrate;
Inline nano-patterning device comprising a. The method of claim 3,
When the support member 110 is opaque, in-line nano patterning device, characterized in that a plurality of holes (111) are formed in a predetermined region of the support member (110). The method of claim 1,
One between each chamber to control the process time of the load lock chamber 10, the sputter chamber 20, the etch chamber 30 and the unload lock chamber 40 and to prevent contamination due to mixing of process gases between the chambers Inline nano-patterning device, characterized in that the buffer chamber 50 or more. The method of claim 1,
A process having a relatively long tact time in consideration of a tact time of each chamber is characterized in that the two or more chambers connected in parallel drive the process. The method of claim 1,
The sputtering process on the surface of the substrate in the sputter chamber 20 is carried out while the sputter target (sputter target) is moved, characterized in that the device. The method of claim 1,
In the sputter chamber 20 or the etch chamber 30,
In-line nano patterning device further comprises an in-situ monitoring device (60, 70) to control the stability and reproducibility of the process. 9. The method of claim 8,
The in situ monitoring device (60, 70),
One or more light sources 61 and 71 for irradiating light to the surface of the substrate as the workpiece; And
Detectors 62 and 72 for monitoring in real time the intensity of light emitted from the light source and transmitted or reflected on the substrate;
In-line nano patterning device comprising a. 10. The method of claim 9,
In-line nano-patterning device, characterized in that the light receiving portion (90) is provided on the wall of the chamber in a predetermined region of the chamber in which the light source (61, 71) or the detector (62, 72) is installed. The method of claim 10,
The light receiving unit 90,
A window 91 provided at an interface between the inside and the outside of the chamber to receive light emitted from the light sources 61 and 71 or light transmitted or reflected by the substrate; And
Light guide 92 for monitoring the light transmitted or reflected on the substrate without noise by improving the linearity of the light emitted from the light sources (61, 71) into the chamber, or by minimizing interference by other light ;
And the light guide (92) is installed between the window (91) and the light source (61,71) or between the window (91) and the detector (62,72). 10. The method of claim 9,
The detectors 62 and 72 and the light sources 61 and 71 are provided in plurality in the horizontal and vertical directions of the substrate according to the size of the entire process, the size of the equipment and the size of the processed substrate. . 9. The method of claim 8,
In the in-situ monitoring device 60 installed in the sputter chamber 20,
In order to control the size and distribution of the nano mask formed on the surface of the substrate, the intensity of light transmitted from the light source 61 to the surface of the substrate to be processed and transmitted or reflected on the substrate is monitored in real time through the detector 62. In-line nano patterning device, characterized in that. The method of claim 13,
In-line nano-patterning, characterized in that the process is controlled by analyzing the intensity difference of light transmitted from the light source to the surface of the substrate and reflected or transmitted to the substrate to form a nanomask having a different size and distribution. Device. 15. The method of claim 14,
In-line nano patterning device, characterized in that for analyzing the difference in the intensity of light transmitted or reflected on the substrate in the short wavelength region and the long wavelength region based on the wavelength of 500 ~ 550 nm. 9. The method of claim 8,
In the in-situ monitoring device 70 is installed in the etch chamber 30,
In order to monitor and control the progress of the etching of the surface of the substrate, the detector 72 monitors the spectrum of light transmitted from the light source 71 to the surface of the workpiece and transmitted or reflected on the substrate in real time. Inline nano patterning device characterized by the above-mentioned. 17. The method of claim 16,
In the case of using a transparent substrate as a work piece,
The light source 71 is a plasma 31 used for etching in the etch chamber 30,
After the incident from the plasma 31 to the substrate is scattered by the nano-pattern formed on the surface of the substrate and the bottom surface of the substrate characterized in that the spectrum of the light emitted to one side of the substrate by measuring through the detector 72 Inline nano patterning device. 18. The method of claim 17,
In-line nano-patterning further comprises an in-situ plasma monitoring device 80 for monitoring the spectrum of the light emitted from the plasma light source through the detector 81 in order to ensure stability and reproducibility of the plasma 31. Device. 19. The method of claim 18,
In-line nano-patterning device, characterized in that the light receiving portion 90 is provided on the wall of the chamber in a predetermined region of the chamber in which the detector 81 is installed. 20. The method of claim 19,
The light receiving unit 90,
A window 91 provided at an interface between the inside and the outside of the chamber to receive light emitted from the plasma 31; And
A light guide 92 for monitoring the light emitted from the plasma 31 without noise by minimizing interference by other light;
And the light guide (92) is installed between the window (91) and the detector (81). 19. The method of claim 18,
The detector 81 of the in-situ plasma monitoring device 80 is installed in a plurality of horizontal and vertical directions of the substrate according to the size of the overall process, the size of the equipment and the size of the substrate to be processed,
In-line nano-patterning device, characterized in that a plurality is installed in the height direction between the anode (anode) and the cathode (cathode) of the plasma 31 to monitor the entire volume of the plasma in real time. 22. The method is prepared using the inline nano patterning device of any one of claims 1 to 21,
In order to implement anti-reflection (AR) on the surface of the substrate, a nano-mask is formed after the nano-pattern is formed, the anti-reflection substrate is formed with a nano-scale projection. The method of claim 22,
The nano-scale projection is anti-reflective substrate, characterized in that formed in the form of a mixture of at least any one or more size range of the size range of 50 ~ 150 nm, 150 ~ 300 nm, 300 ~ 1000 nm and 1000nm or more. 24. The method of claim 23,
Nano projections of various sizes,
The size and distribution control of the nano mask using the in-situ monitoring device 60 in the sputter chamber 20,
Anti-reflective substrate, characterized in that formed through the etching control of the substrate surface using the in-situ monitoring device (70) and the in-situ plasma monitoring device (80) in the etch chamber (30).

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