KR101290333B1 - Regeneration system for an etching solution - Google Patents

Regeneration system for an etching solution Download PDF

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KR101290333B1
KR101290333B1 KR1020110052504A KR20110052504A KR101290333B1 KR 101290333 B1 KR101290333 B1 KR 101290333B1 KR 1020110052504 A KR1020110052504 A KR 1020110052504A KR 20110052504 A KR20110052504 A KR 20110052504A KR 101290333 B1 KR101290333 B1 KR 101290333B1
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etching
etching solution
glass
wastewater
sludge
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KR20120133713A (en
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김재묵
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주식회사 글라소울
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    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
    • C02F1/5209—Regulation methods for flocculation or precipitation
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
    • C02F1/5281—Installations for water purification using chemical agents
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/58—Treatment of water, waste water, or sewage by removing specified dissolved compounds
    • C02F1/583—Treatment of water, waste water, or sewage by removing specified dissolved compounds by removing fluoride or fluorine compounds
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F11/00—Treatment of sludge; Devices therefor
    • C02F11/12—Treatment of sludge; Devices therefor by de-watering, drying or thickening
    • C02F11/14—Treatment of sludge; Devices therefor by de-watering, drying or thickening with addition of chemical agents
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F1/00—Treatment of water, waste water, or sewage
    • C02F1/52—Treatment of water, waste water, or sewage by flocculation or precipitation of suspended impurities
    • C02F2001/5218—Crystallization
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2101/00—Nature of the contaminant
    • C02F2101/10—Inorganic compounds
    • C02F2101/12—Halogens or halogen-containing compounds
    • C02F2101/14—Fluorine or fluorine-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/12—Nature of the water, waste water, sewage or sludge to be treated from the silicate or ceramic industries, e.g. waste waters from cement or glass factories
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2209/00—Controlling or monitoring parameters in water treatment
    • C02F2209/02—Temperature
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
    • C02F2303/00—Specific treatment goals
    • C02F2303/06—Sludge reduction, e.g. by lysis

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Hydrology & Water Resources (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Water Supply & Treatment (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Surface Treatment Of Glass (AREA)
  • Weting (AREA)

Abstract

본 발명은 식각 용액 재생 시스템에 관한 것으로, 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 화학적 처리를 통해 결정화한 후 제거하여 식각 용액을 재사용할 수 있도록 함으로써 비용을 저감할 수 있고, 식각 폐수 처리에 따른 공해 발생을 최소화할 수 있도록 한 것이다.The present invention relates to an etching solution regeneration system, and can reduce the cost by allowing the etching solution to be reused by crystallizing and removing the glass sludge contained in the etching wastewater generated after the glass etching operation through chemical treatment, and etching It is designed to minimize the pollution caused by wastewater treatment.

Description

식각 용액 재생 시스템{Regeneration system for an etching solution}Regeneration system for an etching solution

본 발명은 식각 용액 재생 기술에 관련한 것으로, 특히 유리 슬림(Slim) 작업용 식각 용액 재생 시스템에 관한 것이다.FIELD OF THE INVENTION The present invention relates to etching solution regeneration techniques, and more particularly to an etching solution regeneration system for glass slim operation.

유리 제조시 원하는 두께의 유리를 얻기 위해서 유리 식각 작업을 수행한다. 유리 식각 작업은 유리를 식각 용액에 담그어 식각 용액에 의해 유리의 표면이 식각되도록 하는 공정이다.In the manufacture of glass, glass etching is performed to obtain glass of a desired thickness. Glass etching is a process in which the surface of the glass is etched by the etching solution by dipping the glass in the etching solution.

그런데, 유리 식각 작업 후 유리 슬러지가 발생하여 식각 용액에 함유되게 되어 식각 폐수가 발생하는데, 이 식각 폐수를 재사용하지 않고 폐기할 경우 금전적인 손해나 공해 문제 등이 발생한다.However, after the glass etching operation, the glass sludge is generated and contained in the etching solution, so that the etching wastewater is generated. If the etching wastewater is disposed of without reuse, financial damage or pollution problem occurs.

따라서, 본 발명자는 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 제거함으로써 식각 용액을 재사용할 수 있도록 한 식각 용액 재생 기술에 대한 연구를 하게 되었다.Therefore, the present inventors have studied the etching solution regeneration technology that allows the etching solution to be reused by removing the glass sludge contained in the etching wastewater generated after the glass etching operation.

본 발명은 상기한 취지하에 발명된 것으로, 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 화학적 처리를 통해 결정화하여 제거함으로써 식각 용액을 재사용할 수 있도록 한 식각 용액 재생 시스템을 제공함을 그 목적으로 한다.The present invention has been invented under the above-described object, and an object of the present invention is to provide an etching solution regeneration system that enables the etching solution to be reused by crystallizing and removing the glass sludge contained in the etching wastewater generated after the glass etching operation through chemical treatment. It is done.

상기한 목적을 달성하기 위한 본 발명의 일 양상에 따르면, 유리 식각 작업 후 발생하는 슬러지를 포함하는 식각 폐수에 결정화 촉진제를 투입한 후 교반하여 식각 폐수에 포함된 슬러지를 결정화하여 제거하고, 슬러지가 제거된 식각 폐수에 대해 온도 및 농도를 보상하여 식각 용액을 재생하는 것을 특징으로 한다.According to an aspect of the present invention for achieving the above object, by adding a crystallization promoter to the etching wastewater containing the sludge generated after the glass etching operation and stirring to crystallize and remove the sludge contained in the etching wastewater, the sludge is It is characterized by regenerating the etching solution by compensating the temperature and concentration for the removed etching wastewater.

본 발명은 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 화학적 처리를 통해 결정화한 후 제거하여 식각 용액을 재사용할 수 있도록 함으로써 비용을 저감할 수 있고, 식각 폐수 처리에 따른 공해 발생을 최소화할 수 있는 효과를 가진다.The present invention can reduce the cost by allowing the etching solution to be reused by crystallizing and removing the glass sludge contained in the etching wastewater generated after the glass etching process through chemical treatment, and minimize the generation of pollution due to the etching wastewater treatment It has an effect that can be done.

도 1 은 본 발명에 따른 식각 용액 재생 시스템의 일 실시예를 도시한 개요도이다.
도 2 는 본 발명에 따른 식각 용액 재생 시스템의 식각 용액 재생 동작의 일 예를 도시한 흐름도이다.1 is a schematic diagram showing an embodiment of an etching solution regeneration system according to the present invention.
2 is a flowchart illustrating an example of an etching solution regeneration operation of the etching solution regeneration system according to the present invention.

이하, 첨부된 도면을 참조하여 기술되는 바람직한 실시예를 통하여 본 발명을 당업자가 용이하게 이해하고 재현할 수 있도록 상세히 기술하기로 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the like elements throughout.

본 발명을 설명함에 있어 관련된 공지 기능 또는 구성에 대한 구체적인 설명이 본 발명 실시예들의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략할 것이다.In the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.

본 발명 명세서 전반에 걸쳐 사용되는 용어들은 본 발명 실시예에서의 기능을 고려하여 정의된 용어들로서, 사용자 또는 운용자의 의도, 관례 등에 따라 충분히 변형될 수 있는 사항이므로, 이 용어들의 정의는 본 명세서 전반에 걸친 내용을 토대로 내려져야 할 것이다.The terms used throughout the specification of the present invention have been defined in consideration of the functions of the embodiments of the present invention and can be sufficiently modified according to the intentions and customs of the user or operator. It should be based on the contents of.

도 1 은 본 발명에 따른 식각 용액 재생 시스템의 일 실시예를 도시한 개요도이다. 도 1 에 도시한 바와 같이, 이 실시예에 따른 식각 용액 재생 시스템(100)은 식각 용액 저장부(110)와, 식각 폐수 저장부(120)와, 슬러지 제거부(130)와, 보상부(140)를 포함하고, 이 들간은 펌프와 밸브로 연결되어 구성된다.1 is a schematic diagram showing an embodiment of an etching solution regeneration system according to the present invention. As shown in FIG. 1, the etching solution regeneration system 100 according to this embodiment includes an etching solution storage unit 110, an etching wastewater storage unit 120, a sludge removal unit 130, and a compensation unit ( 140, which are connected by a pump and a valve.

상기 식각 용액 저장부(110)는 유리 식각 작업에 사용되는 식각 용액을 저장한다. 이 때, 상기 식각 용액이 불산(HF) 등의 불소 화합물을 포함할 수 있다. 이외에도 상기 식각 용액이 황산(H2SO4), 인산(H3PO4), 질산(HNO3)을 더 포함할 수 있다.The etching solution storage unit 110 stores the etching solution used for the glass etching operation. In this case, the etching solution may include a fluorine compound such as hydrofluoric acid (HF). In addition, the etching solution may further include sulfuric acid (H 2 SO 4 ), phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ).

또한, 상기 식각 용액이 유리 식각시 유리의 표면장력을 감소시켜 퍼짐성과 습윤성을 향상시키는 계면활성제를 더 포함할 수도 있다. 예컨대, 상기 계면활성제로 모노 에탄올 아민(Monoethanol amine), 트리 에탄올 아민(Triethanol amine), 다이 메탄올 아민(Dimethyl amine) 등의 양이온 계면활성제를 사용할 수 있다.In addition, the etching solution may further include a surfactant to reduce the surface tension of the glass during the glass etching to improve the spreadability and wettability. For example, cationic surfactants such as monoethanol amine, triethanol amine, and dimethyl amine may be used as the surfactant.

예컨대, 식각 용액 저장부(110)에 식각 용액으로 불산(HF)이 저장되고, 이 불산(HF)을 유리(SiO2)에 분사하면, 반응식 1과 같은 화학 작용에 의해 유리 표면이 식각되어 얇아지게 됨으로써 원하는 두께의 유리가 제조되게 된다.For example, when hydrofluoric acid (HF) is stored as an etching solution in the etching solution storage unit 110, and the hydrofluoric acid (HF) is sprayed onto the glass (SiO 2 ), the glass surface is etched and thinned by a chemical reaction as in Scheme 1 The result is a glass of desired thickness.

(반응식 1) SiO2 + 4HF = SiF4 + 2H2O(Scheme 1) SiO 2 + 4HF = SiF 4 + 2H 2 O

이 때, 반응식 1에 의해 생성된 기체 상태의 사불화규소(SiF4)는 식각 용액 저장부(110)내에서 식각 용액인 불산(HF)과 반응식 2와 같이 화학 작용하여 고체 상태의 슬러지인 불화규소산(H2SiF6)이 생성된다.At this time, the gaseous silicon tetrafluoride (SiF 4 ) produced by the reaction scheme 1 reacts with the hydrofluoric acid (HF), which is an etching solution, in the etching solution storage unit 110, as in Scheme 2, to give a solid sludge fluoride. Siliconic acid (H 2 SiF 6 ) is produced.

(반응식 2) SiF4 + 2HF = H2SiF6 (Scheme 2) SiF 4 + 2HF = H 2 SiF 6

상기 식각 용액 저장부(110)내에서 위와 같은 화학 작용에 의해 발생하는 슬러지를 포함하는 식각 폐수는 펌프 및 밸브의 작용에 의해 식각 폐수 저장부(120)로 이송된다.The etch wastewater containing sludge generated by the above chemical reaction in the etch solution storage 110 is transferred to the etch wastewater storage 120 by the action of a pump and a valve.

상기 식각 폐수 저장부(120)는 유리 식각 작업 후 발생하는 슬러지를 포함하는 식각 폐수를 저장한다. 이 때, 상기 슬러지가 불화규소산(H2SiF6) 등의 규불화물을 포함할 수 있다.The etching wastewater storage unit 120 stores the etching wastewater including sludge generated after the glass etching operation. In this case, the sludge may include silicides such as silicon fluoride (H 2 SiF 6 ).

상기 식각 폐수 저장부(120)에 저장되는 슬러지를 포함하는 식각 폐수는 펌프 및 밸브의 작용에 의해 배출되어 상기 슬러지 제거부(130)로 이송되고, 식각 폐수내에 포함된 슬러지가 결정화되어 제거된다.The etch waste water including the sludge stored in the etch waste water storage unit 120 is discharged by the action of a pump and a valve is transferred to the sludge removal unit 130, the sludge contained in the etch waste water is crystallized and removed.

상기 슬러지 제거부(130)는 상기 식각 폐수 저장부(120)로부터 배출된 식각 폐수에 결정화 촉진제를 투입한 후 교반하여 식각 폐수에 포함된 슬러지를 결정화하여 제거한다. The sludge removal unit 130 is added to the crystallization promoter in the etching wastewater discharged from the etching wastewater storage unit 120 and stirred to remove the sludge contained in the etching wastewater by crystallization.

이 때, 상기 결정화 촉진제는 상기 반응식 1 또는 반응식 2의 화학 작용을 촉진시키는 물질로 예컨대, 상기 결정화 촉진제가 수산화 알루미늄(Al(OH)3)일 수 있다.In this case, the crystallization promoter is a substance that promotes the chemical reaction of Scheme 1 or Scheme 2, for example, the crystallization promoter may be aluminum hydroxide (Al (OH) 3 ).

결정화 촉진제로 수산화 알루미늄(Al(OH)3)을 사용한 경우, 반응식 1의 화학 작용시 규소(Si) 및 불소(F)의 발생을 촉진시켜 사불화규소(SiF4) 생성을 촉진시킬 수 있다.When aluminum hydroxide (Al (OH) 3 ) is used as the crystallization promoter, it is possible to promote the generation of silicon tetrafluoride (SiF 4 ) by promoting the generation of silicon (Si) and fluorine (F) during the chemical reaction of Scheme 1.

반응식 1의 화학 작용이 촉진되면, 반응식 2의 화학 작용 역시 촉진되므로, 고체 상태의 슬러지인 불화규소산(H2SiF6) 생성이 촉진되게 된다. 이렇게 생성된 슬러지를 슬러지 제거부(130)에 지그(도면 도시 생략) 및 이송수단(도면 도시 생략)등을 구성하여 제거할 수 있다.When the chemical reaction of Scheme 1 is promoted, the chemical reaction of Scheme 2 is also promoted, thereby promoting the production of silicon fluoride (H 2 SiF 6 ), which is a solid sludge. The sludge generated as described above may be removed by configuring a jig (not shown) and a conveying means (not shown) in the sludge removal unit 130.

상기 슬러지 제거부(130)에 의해 슬러지가 제거된 식각 폐수는 펌프 및 밸브의 작용에 의해 배출되어 상기 보상부(140)로 이송되고, 보상부(140)에 의해 온도 및 농도가 보상된다. The etch waste water from which the sludge is removed by the sludge removal unit 130 is discharged by the action of a pump and a valve and is transferred to the compensation unit 140, and the temperature and concentration are compensated by the compensation unit 140.

상기 보상부(140)는 상기 슬러지 제거부(130)에 의해 슬러지가 제거된 식각 폐수에 대해 온도 및 농도를 보상하여 식각 용액을 재생하고, 재생된 식각 용액을 상기 식각 용액 저장부(110)로 이송한다.The compensator 140 recovers the etching solution by compensating for the temperature and concentration of the etching wastewater from which the sludge is removed by the sludge removal unit 130, and converts the regenerated etching solution into the etching solution storage unit 110. Transfer.

예컨대, 상기 보상부(140)에 의해 보상된 식각 용액의 온도가 20 ∼ 40℃일 수 있다. 식각 폐수에 포함된 슬러지를 제거하는 과정에서 식각 폐수의 온도는 낮아지게 된다. 식각 용액의 온도가 낮으면 유리 식각 효율이 떨어지므로, 상기 보상부(140)를 통해 식각 용액의 온도가 20 ∼ 40℃ 정도 되도록 적절하게 보상한다.For example, the temperature of the etching solution compensated by the compensator 140 may be 20 to 40 ° C. In the process of removing the sludge contained in the etching wastewater, the temperature of the etching wastewater is lowered. When the temperature of the etching solution is low, the glass etching efficiency is lowered, so that the temperature of the etching solution is appropriately compensated by the compensation unit 140 at about 20 to 40 ° C.

예컨대, 상기 보상부에 의해 보상된 식각 용액내의 불소 화합물의 농도가 약 8 ∼ 12wt%일 수 있다. 식각 폐수에 포함된 슬러지를 제거하는 과정에서 식각 폐수에 포함되는 불소 화합물 농도가 낮아지게 된다. 식각 용액의 농도가 낮으면 유리 식각 효율이 떨어지므로, 상기 보상부(140)를 통해 식각 용액내의 불소 화합물의 농도가 약 8 ∼ 12wt% 정도 되도록 적절하게 보상한다.For example, the concentration of the fluorine compound in the etching solution compensated by the compensation unit may be about 8 to 12wt%. In the process of removing the sludge contained in the etching wastewater, the concentration of fluorine compounds in the etching wastewater is lowered. When the concentration of the etching solution is low, since the glass etching efficiency is lowered, the compensation unit 140 properly compensates for the concentration of the fluorine compound in the etching solution to about 8 to 12wt%.

상기 보상부(140)에 의해 보상된 식각 용액은 펌프 및 밸브의 작용에 의해 배출되어 상기 식각 용액 저장부(110)로 이송되고, 상기 식각 용액 저장부(110)에서 유리 식각시 재사용되게 된다.The etching solution compensated by the compensator 140 is discharged by the action of a pump and a valve and is transferred to the etching solution storage 110, and reused when the glass is etched in the etching solution storage 110.

따라서, 이와 같이함에 의해 본 발명은 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 화학적 처리를 통해 결정화한 후 제거하여 식각 용액을 재사용할 수 있도록 함으로써 비용을 저감할 수 있고, 식각 폐수 처리에 따른 공해 발생을 최소화할 수 있으므로, 상기에서 제시한 본 발명의 목적을 달성할 수 있다.Therefore, by doing so, the present invention can reduce the cost by allowing the etching solution to be reused by crystallizing and removing the glass sludge contained in the etching wastewater generated after the glass etching operation through chemical treatment, and treating the etching wastewater treatment. Since it is possible to minimize the generation of pollution according to, it is possible to achieve the object of the present invention presented above.

상기한 구성을 갖는 본 발명에 따른 식각 용액 재생 시스템의 식각 용액 재생 동작을 도 2 를 참조하여 간략하게 알아본다. 도 2 는 본 발명에 따른 식각 용액 재생 시스템의 식각 용액 재생 동작의 일 예를 도시한 흐름도이다.An etching solution regeneration operation of the etching solution regeneration system according to the present invention having the above configuration will be briefly described with reference to FIG. 2. 2 is a flowchart illustrating an example of an etching solution regeneration operation of the etching solution regeneration system according to the present invention.

먼저, 유리 식각 단계(210)에서, 식각 용액 재생 시스템(100)의 식각 용액 저장부(110)에 저장된 식각 용액을 유리에 분사하여 유리를 식각한다. 이 때, 상기 식각 용액이 불산(HF) 등의 불소 화합물을 포함할 수 있다. 이외에도 상기 식각 용액이 황산(H2SO4), 인산(H3PO4), 질산(HNO3)을 더 포함할 수 있다.First, in the glass etching step 210, the glass is etched by spraying the etching solution stored in the etching solution storage unit 110 of the etching solution regeneration system 100 to the glass. In this case, the etching solution may include a fluorine compound such as hydrofluoric acid (HF). In addition, the etching solution may further include sulfuric acid (H 2 SO 4 ), phosphoric acid (H 3 PO 4 ), nitric acid (HNO 3 ).

또한, 상기 식각 용액이 유리 식각시 유리의 표면장력을 감소시켜 퍼짐성과 습윤성을 향상시키는 계면활성제를 더 포함할 수도 있다. 예컨대, 상기 계면활성제로 모노 에탄올 아민(Monoethanol amine), 트리 에탄올 아민(Triethanol amine), 다이 메탄올 아민(Dimethyl amine) 등의 양이온 계면활성제를 사용할 수 있다. 유리 식각과 관련한 화학 반응식은 기 설명하였으므로, 중복 설명은 생략한다.In addition, the etching solution may further include a surfactant to reduce the surface tension of the glass during the glass etching to improve the spreadability and wettability. For example, cationic surfactants such as monoethanol amine, triethanol amine, and dimethyl amine may be used as the surfactant. Since the chemical reaction scheme related to the glass etching has been described above, the redundant description is omitted.

그 다음, 식각 폐수 저장 단계(220)에서 유리 식각 단계(210)에 의한 유리 식각 작업 후 발생하는 슬러지를 포함하는 식각 폐수를 식각 용액 재생 시스템(100)의 식각 폐수 저장부(120)에 저장한다. 이 때, 상기 슬러지가 불화규소산(H2SiF6) 등의 규불화물을 포함할 수 있다.Next, in the etching wastewater storage step 220, the etching wastewater including sludge generated after the glass etching operation by the glass etching step 210 is stored in the etching wastewater storage unit 120 of the etching solution regeneration system 100. . In this case, the sludge may include silicides such as silicon fluoride (H 2 SiF 6 ).

그 다음, 슬러지 제거 단계(230)에서 식각 용액 재생 시스템(100)의 식각 폐수 저장부(120)로부터 슬러지 제거부(130)로 이송된 식각 폐수에 결정화 촉진제를 투입한 후 교반하여 식각 폐수에 포함된 슬러지를 결정화하여 제거한다. 이 때, 상기 결정화 촉진제가 수산화 알루미늄(Al(OH)3)일 수 있다. 슬러지 결정화와 관련해서는 기 설명하였으므로, 중복 설명은 생략한다. Next, in the sludge removal step 230, a crystallization promoter is added to the etching wastewater transferred from the etching wastewater storage unit 120 of the etching solution regeneration system 100 to the sludge removal unit 130, and then stirred and included in the etching wastewater. The sludge is crystallized and removed. In this case, the crystallization promoter may be aluminum hydroxide (Al (OH) 3 ). Since the sludge crystallization has been described above, duplicate description is omitted.

그 다음, 보상단계(240)에서 상기 슬러지 제거단계(230)에 의해 슬러지가 제거된 식각 폐수에 대해 식각 용액 재생 시스템(100)의 보상부(140)를 통해 온도 및 농도를 보상하여 식각 용액을 재생하고, 재생된 식각 용액을 식각 용액 재생 시스템(100)의 식각 용액 저장부(110)로 이송한다. 온도 및 농도 보상과 관련해서는 기 설명하였으므로, 중복 설명은 생략한다.Subsequently, in the compensation step 240, the etching solution is prepared by compensating the temperature and concentration through the compensator 140 of the etching solution regeneration system 100 for the etching wastewater from which the sludge is removed by the sludge removal step 230. The regenerated etch solution is transferred to the etch solution reservoir 110 of the etch solution regeneration system 100. Since the temperature and concentration compensation have been described above, duplicate descriptions are omitted.

따라서, 이와 같이함에 의해 본 발명은 유리 식각 작업 후 발생하는 식각 폐수에 포함되는 유리 슬러지를 화학적 처리를 통해 결정화한 후 제거하여 식각 용액을 재사용할 수 있도록 함으로써 비용을 저감할 수 있고, 식각 폐수 처리에 따른 공해 발생을 최소화할 수 있다.Therefore, by doing so, the present invention can reduce the cost by allowing the etching solution to be reused by crystallizing and removing the glass sludge contained in the etching wastewater generated after the glass etching operation through chemical treatment, and treating the etching wastewater treatment. Pollution can be minimized.

본 발명은 첨부된 도면에 의해 참조되는 바람직한 실시예를 중심으로 기술되었지만, 이러한 기재로부터 후술하는 특허청구범위에 의해 포괄되는 범위내에서 본 발명의 범주를 벗어남이 없이 다양한 변형이 가능하다는 것은 명백하다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. .

본 발명은 식각 용액 재생 기술분야 및 이의 응용 기술분야에서 산업상으로 이용 가능하다.The present invention is industrially available in the etching solution regeneration art and its application field.

100 : 식각 용액 재생 시스템 110 : 식각 용액 저장부
120 : 식각 폐수 저장부 130 : 슬러지 제거부
140 : 보상부100: etching solution regeneration system 110: etching solution storage unit
120: etching waste water storage unit 130: sludge removal unit
140: compensation unit

Claims (7)

유리 식각 작업에 사용되는 불소 화합물과, 유리 식각시 유리의 표면장력을 감소시켜 퍼짐성과 습윤성을 향상시키는 계면활성제를 포함하는 식각 용액을 저장하는 식각 용액 저장부와;
유리 식각 작업 후 발생하는 규불화물을 포함하는 슬러지를 포함하는 식각 폐수를 저장하는 식각 폐수 저장부와;
상기 식각 폐수 저장부로부터 배출된 식각 폐수에 결정화 촉진제로 수산화 알루미늄을 투입한 후 교반하여 식각 폐수에 포함된 슬러지를 결정화하여 제거하는 슬러지 제거부와;
상기 슬러지 제거부에 의해 슬러지가 제거된 식각 폐수에 대해 온도 및 농도를 보상하여 식각 용액의 온도가 약 20 ∼ 40℃이고, 식각 용액내의 불소 화합물의 농도가 약 8 ∼ 12wt%인 식각 용액을 재생하고, 재생된 식각 용액을 상기 식각 용액 저장부로 이송하는 보상부를;
포함하여 이루어지는 것을 특징으로 하는 식각 용액 재생 시스템.An etching solution storage unit for storing an etching solution including a fluorine compound used in the glass etching operation and a surfactant for reducing the surface tension of the glass during glass etching to improve spreadability and wettability;
An etching wastewater storage unit for storing the etching wastewater including sludge containing silicides generated after the glass etching operation;
A sludge removal unit for adding aluminum hydroxide as a crystallization accelerator to the etching wastewater discharged from the etching wastewater storage unit and then stirring and crystallizing and removing sludge contained in the etching wastewater;
The sludge removal unit compensates for the temperature and concentration of the etch waste water from which the sludge is removed, thereby regenerating the etching solution having a temperature of the etching solution of about 20 to 40 ° C. and a concentration of the fluorine compound in the etching solution of about 8 to 12 wt%. And a compensation unit for transferring the regenerated etching solution to the etching solution storage unit.
Etching solution regeneration system comprising a. 삭제delete 삭제delete 삭제delete 삭제delete 삭제delete 삭제delete
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960011886B1 (en) * 1993-09-08 1996-09-04 두산유리 주식회사 Waste water treatment method
JPH10118665A (en) * 1996-10-15 1998-05-12 Kurita Water Ind Ltd Treatment of nh4 type cmp waste solution
KR0149156B1 (en) * 1995-08-09 1998-08-17 안덕기 Apparatus and method for the treatment of grind waste water
JP2000084570A (en) 1998-07-17 2000-03-28 Nec Corp Treatment of fluorine-containing waste water and treating apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960011886B1 (en) * 1993-09-08 1996-09-04 두산유리 주식회사 Waste water treatment method
KR0149156B1 (en) * 1995-08-09 1998-08-17 안덕기 Apparatus and method for the treatment of grind waste water
JPH10118665A (en) * 1996-10-15 1998-05-12 Kurita Water Ind Ltd Treatment of nh4 type cmp waste solution
JP2000084570A (en) 1998-07-17 2000-03-28 Nec Corp Treatment of fluorine-containing waste water and treating apparatus

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