KR101283114B1 - Solar cell module and preparing method of the same - Google Patents

Abstract

The embodiment provides a solar cell module and a method of manufacturing the same. A solar cell module according to an embodiment includes: a rear electrode layer disposed on a supporting substrate; A light absorbing layer disposed on the rear electrode layer; A front electrode layer disposed on the light absorbing layer; And a connection wire penetrating the light absorbing layer and electrically connecting the rear electrode layer and the front electrode layer, wherein the front electrode layer and the connection wire each include metal nanowires.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a solar cell module,

The embodiment relates to a solar cell module and a method of manufacturing the same.

A solar cell can be defined as a device that converts light energy into electric energy by using a photovoltaic effect that generates electrons when light is applied to a p-n junction diode. The solar cell can be classified into a silicon solar cell, a compound semiconductor solar cell represented by group I-III-VI or III-V, a dye-sensitized solar cell, and an organic solar cell, depending on materials used as a junction diode.

CIGS (CuInGaSe) solar cell, which is one of the I-III-VI family chalcopyrite compound semiconductors, has excellent light absorption, high photoelectric conversion efficiency even at a thin thickness, and excellent electro- It is emerging as an alternative solar cell.

Unlike bulk solar cells, CIGS thin film solar cells consist of a plurality of solar cell units connected in series using the patterning process (TH1 to TH3). At this time, the most important patterning process is the TH2 process. The TH2 pattern is a portion where the front electrode and the rear electrode are contacted through the connection wiring, and the series resistance R _s is greatly affected by the contact of the TH2 portion. When the contact resistance between the connection wiring and the rear electrode is increased, there is a problem that the series resistance (R _s ) increases and consequently the conversion efficiency of the solar cell is lowered.

In addition, doped zinc oxide (AZO), which is used as a conventional front electrode, is thickly deposited with a low power source in order to lower resistance, which not only reduces transmittance but also increases process instability, material cost, and equipment investment cost. There is.

The embodiment is to provide a solar cell module and a method of providing the same by reducing contact resistance and improving electron collecting capability, thereby improving photoelectric conversion efficiency.

A solar cell module according to an embodiment includes: a rear electrode layer disposed on a supporting substrate; A light absorbing layer disposed on the rear electrode layer; A front electrode layer disposed on the light absorbing layer; And a connection wire penetrating the light absorbing layer and electrically connecting the rear electrode layer and the front electrode layer, wherein the front electrode layer and the connection wire each include metal nanowires.

A method of manufacturing a solar cell module according to an embodiment includes forming a rear electrode layer on a supporting substrate; Forming a light absorbing layer on the back electrode layer; Forming a through hole penetrating the light absorbing layer; Forming metal nanowires on the light absorbing layer and in the through grooves; Etching metal sidewalls of the through grooves to remove metal nanowires formed on the sidewalls of the through grooves; And forming a front wiring layer on the light absorbing layer and forming a connection wiring in the through groove.

The solar cell module according to the embodiment provides a connection wiring including metal nanowires. Accordingly, the series resistance (R _s ) between the contact wiring and the solar cell of the contact electrode and the back electrode layer can be reduced. In addition, the front electrode layer according to the embodiment includes a metal nanowire having excellent electrical properties. Accordingly, it is possible to collect more electrons in the front electrode layer, increase the short-circuit current density (Jsc), and to manufacture a thickness that is about 20% or more thinner than the conventional one. Accordingly, the photoelectric conversion efficiency of the solar cell module according to the embodiment may be improved.

The solar cell module manufacturing method according to the embodiment may completely remove the metal nanowires formed on the side surfaces of the connection wirings by using a laser process. Accordingly, the embodiment can reduce the leakage current from the connection wiring to the light absorbing layer by a simple process, and as a result, can improve the reliability of the device.

1 is a cross-sectional view showing a cross section of a solar cell module according to an embodiment.
2 to 4 are cross-sectional views illustrating a cross section of the connection wiring according to the embodiment.
5 to 10 are cross-sectional views illustrating a method of manufacturing the solar cell module according to the embodiment.

In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , “On” and “under” include both “directly” or “indirectly” other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a cross-sectional view showing a cross section of a solar cell according to an embodiment. 2 to 4 are cross-sectional views illustrating a cross section of the connection wiring according to the embodiment.

Referring to FIG. 1, a solar cell according to an embodiment includes a support substrate 100, a rear electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a front electrode layer 600, and a connection. The wiring 700 and the metal nanowire 800 are included.

The support substrate 100 has a plate shape, and the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, the front electrode layer 600, and the connection wiring 700 and the metal nanowires 800 are supported. The support substrate 100 may be transparent, rigid or flexible.

The support substrate 100 may be an insulator. For example, the support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate. In more detail, the support substrate 100 may be a soda lime glass substrate. Alternatively, a ceramic substrate such as alumina, stainless steel, a flexible polymer, or the like may be used as the support substrate 100.

The back electrode layer 200 is disposed on the support substrate 100. The back electrode layer 200 is a conductive layer. The rear electrode layer 200 may be formed of any one of molybdenum (Mo), gold (Au), aluminum (Al), chromium (Cr), tungsten (W), and copper (Cu). Among them, in particular, molybdenum (Mo) has a smaller difference between the support substrate 100 and the coefficient of thermal expansion than other elements, and thus it is possible to prevent the occurrence of peeling due to excellent adhesion.

The back electrode layer 200 includes a first through hole TH1. The rear electrode layer 200 may be divided into a plurality of rear electrodes 210, 220 .. by the first through-hole TH1.

The light absorption layer 300 is disposed on the rear electrode layer 200. The light absorption layer 300 includes an I-III-VI compound. For example, the light absorbing layer 300 is copper-indium-gallium-selenide-based (Cu (In, Ga) (Se, S) _2; CIGSS-based) crystal structure, a copper-indium-selenide-based or copper- Gallium-selenide-based crystal structure.

The light absorbing layer 300 includes second through holes TH2 exposing a part of the rear electrode layer 200 and the plurality of light absorbing parts 310 and 320 are formed by the second through holes TH2. .) Can be defined. That is, the light absorbing layer 300 is divided into a plurality of light absorbing parts 310, 320 .. by the second through grooves TH2.

The second through grooves TH2 are formed adjacent to the first through grooves TH1. That is, a part of the second through grooves TH2 is formed on the side of the first through grooves TH1 when viewed in plan. The width of the second through grooves TH2 may be about 40 [mu] m to about 150 [mu] m, but is not limited thereto.

In addition, the connection wiring 700 may be arranged in the second through groove TH2 so as to be taped. In this regard, the connection wiring 700 will be described in detail below.

The buffer layer 400 is disposed on the light absorption layer 300. The buffer layer 400 includes cadmium sulfide, ZnS, In _x S _y, and In _x Se _y Zn (O, OH). The thickness of the buffer layer 400 may be about 50 nm to about 150 nm, and the energy band gap of the buffer layer 400 may be about 2.2 eV to about 2.4 eV.

The high resistance buffer layer 500 is disposed on the buffer layer 400. The high-resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy band gap of the high resistance buffer layer 500 may be about 3.1 eV to about 3.3 eV. In addition, the high-resistance buffer layer 500 may be omitted.

The front electrode layer 600 may be disposed on the light absorbing layer 300. For example, the front electrode layer 600 may be disposed in direct contact with the high-resistance buffer layer 500 on the light absorption layer 300.

The front electrode layer 600 may be formed of a light-transmitting conductive material. In addition, the front electrode layer 600 may have characteristics of an n-type semiconductor. At this time, the front electrode layer 600 may form an n-type semiconductor layer together with the buffer layer 400 to form a pn junction with the light absorbing layer 300 which is a p-type semiconductor layer. The front electrode layer 600 may be formed of, for example, aluminum-doped zinc oxide (AZO). The thickness of the front electrode layer 600 may be about 100 nm to about 500 nm.

The front electrode layer 600 includes third through grooves TH3 and is divided into a plurality of front electrodes 610 and 620 by the third through hole TH3. In addition, a plurality of solar cells C1, C2 .. may be defined by the third through-hole TH3.

The front electrode layer 600 includes a metal nanowire 800. In more detail, the metal nanowires 800 may be disposed in direct contact with an upper surface of the rear electrode layer 200.

The metal nanowires 800 may extend in one direction with respect to the support substrate 100. In more detail, the metal nanowires 800 may extend in the vertical direction or the horizontal direction from the support substrate 100. For example, referring to FIG. 1, the metal nanowires 800 extend in a horizontal direction with respect to the support substrate 100. In addition, the metal nanowire 800 may extend vertically with respect to the support substrate 100, but the embodiment is not limited thereto. That is, the metal nanowire 800 forms a predetermined angle with respect to the support substrate 100 and may be inclined to extend in an embodiment of the present disclosure.

The metal nanowires 800 may be formed in plural. That is, the solar cell according to the embodiment includes a plurality of metal nanowires 800. In this case, the plurality of metal nanowires 800 may be spaced apart from each other as shown in FIG. In addition, the plurality of metal nanowires 800 may be irregularly distributed or regularly arranged.

The metal nanowire 800 is a conductive material. That is, the metal nanowires 800 may allow current generated in the light absorbing layer 300 to move to the outside to flow a current through the solar cell. In order to perform this function, the metal nanowire 800 preferably has a higher electrical conductivity and a smaller specific resistance than the transparent electrode layer 600. That is, the metal nanowire 800 has a very excellent capturing ability of electrons generated in the light absorbing layer 300, thereby minimizing current loss.

In addition, the metal nanowires 800 may not only minimize current loss but also reduce the thickness of the front electrode layer 600. That is, by using the metal nanowires 800 having excellent electrical conductivity as an electrode, the front electrode layer 600 may be formed to a thinner thickness. For example, the thickness of the front electrode 600 according to the embodiment may be reduced by about 20% to about 80% than the conventional front electrode, but is not limited thereto. Accordingly, the solar cell module according to the embodiment may improve transmittance and increase the short-circuit current density (Jsc), thereby improving the photoelectric conversion efficiency of the solar cell.

The metal nanowire 800 may be used without particular limitation as long as it is a metal that can be commonly used as an electrode in the art. For example, the metal nanowires 800 may include silver (Ag), aluminum (Al), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper ( Cu), molybdenum (Mo), ruthenium (Ru), indium (In), tungsten (W) and combinations thereof may include a material selected from the group. In more detail, the metal nanowire 800 may be silver (Ag) nanowires, but is not limited thereto. In addition, the diameter of the metal nanowires 800 may be about 5 nm to about 20 nm, and the length of the metal nanowires 800 may be about 0.1 μm to about 10 μm. The metal nanowires 800 may obtain good electrical characteristics even if they are formed with a diameter of several tens of nanometers.

In addition, the nano-size metal nanowires 800 can be easily transmitted without reflecting or blocking the sunlight coming into the solar cell. Accordingly, the solar cell according to the embodiment may improve the light transmittance and the electrical conductivity and the light-conversion efficiency.

The connection wiring 700 may be formed integrally with the front electrode layer 600. That is, when the above-mentioned transparent conductive material is stacked on the high-resistance buffer layer 500, the transparent conductive material is fined in the second through-hole TH2 to form the connection wiring 700 .

The connection wiring 700 is disposed inside the second through grooves TH2. That is, the connection wiring 700 is arranged to penetrate the light absorption layer 300. The connection wiring 700 extends downward from the front electrode layer 500 and is connected to the rear electrode layer 200.

The connection wiring 700 electrically connects the rear electrode layer 200 and the front electrode layer 600. For example, the connection wiring 700 extends from the front electrode 610 of the first solar cell C1 and is rearward of the second solar cell C2 adjacent to the first solar cell C1. The second solar cell C1 and the second solar cell C2 may be electrically connected to the electrode 220.

The connection wiring 700 includes the metal nanowire 800. For example, the metal nanowires 800 in the connection line 700 may be disposed at an interface between the connection line 700 and the back electrode layer 200. Accordingly, the contact resistance of the connection line 700 and the back electrode layer 200 and the series resistance R _s between the solar cells may be reduced.

Widths of the connection wires 700 have different widths according to positions. In an embodiment, referring to FIGS. 1 and 2, the width of the connection wire 700 may increase as the distance from the back electrode layer 200 increases, but is not limited thereto. For example, referring to FIG. 2, the width W1 of the upper region of the connection wiring 700 may be wider than the width W2 of the lower region of the connection wiring 700.

In another embodiment, referring to FIGS. 3 and 4, the width of the connection line 700 may be formed to be the widest in the middle region of the connection line 700, but is not limited thereto. For example, the connection wire 700 may include an upper region 710 connected to the front electrode layer, a lower region 730 connected to the rear electrode layer 200, and an upper region 710 and the lower region 730. ) May be formed as an intermediate region 720 disposed therebetween. As used herein, the term "upper area of the connection wiring to the lower area of the connection wiring" is only divided for convenience of description, the present application is not limited thereto. That is, the upper region 710 to the lower region 730 of the connection wiring 700 may be integrally formed. 3 and 4, the width W2 of the middle region 720 of the connection wiring 700 may be wider than the widths W1 and W3 of other regions.

As mentioned above, the connection wires 700 having different widths according to positions are manufactured in the process of removing the metal nanowires 800 formed on the side portions of the connection wires 700. That is, the metal nanowire 800 is not formed on the side surface of the connection wiring 700 according to the embodiment. Accordingly, the solar cell module according to the embodiment can reduce the leakage current flowing from the connection wiring 700 to the peripheral light absorbing layer 300, and the reliability of the device can be improved.

5 to 10 are cross-sectional views illustrating a method of manufacturing the solar cell module according to the embodiment. The description of this manufacturing method refers to the description of the solar cell module described above.

Referring to FIG. 5, the back electrode layer 200 is formed on the support substrate 100. The back electrode layer 200 may be formed by physical vapor deposition (PVD) or plating.

The step of forming the rear electrode layer 200 may include: applying a rear electrode material on the supporting substrate; And patterning the rear electrode into a first through-hole (TH1). The rear electrode layer 200 includes the first through hole TH1. That is, the rear electrode layer 200 may be patterned in the first through hole TH1. For example, the width of the first through-hole TH1 may be about 80 占 퐉 to about 200 占 퐉, but is not limited thereto.

Referring to FIG. 6, a light absorbing layer 300, a buffer layer 400, and a high resistance buffer layer 500 are formed on the back electrode layer 200.

The light absorption layer 300 may be formed of a light absorbing layer of a copper-indium-gallium-selenide (Cu (In, Ga) Se _2, CIGS system) while simultaneously or separately evaporating copper, indium, gallium, A method of forming the metal precursor film 300 and a method of forming the metal precursor film by a selenization process are widely used.

After the metal precursor film is formed and then subjected to selenization, a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target. Then, the metal precursor film is formed with a light absorbing layer 300 of copper-indium-gallium-selenide (Cu (In, Ga) Se _2, CIGS system) by a selenization process.

Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

Then, the buffer layer 400 may be formed by depositing cadmium sulfide on the light absorption layer 300 by a chemical bath deposition (CBD) method. In addition, zinc oxide is deposited on the buffer layer 400 by a sputtering process or the like, and the high-resistance buffer layer 500 is formed.

A second through hole TH2 is formed in the light absorbing layer 400, the buffer layer 500, and the high resistance buffer layer 600. That is, the second through-hole TH2 penetrates the light absorption layer 400, the buffer layer 500, and the high-resistance buffer layer 600. The second through groove TH2 may be formed by a mechnical method, and the width of the second through groove TH2 may be about 80 탆 to about 200 탆, but is not limited thereto. A part of the rear electrode layer 200 is exposed by the second through-hole TH2.

Referring to FIG. 7, metal nanowires 800 are formed on the light absorbing layer 300 and in the through grooves TH2 to form the second through grooves TH2. In more detail, the metal nanowires 800 may be formed on the surface of the high resistance buffer layer 500 on the light absorbing layer 300, and at the same time, the metal nanowires 800 may be formed on the bottom surface and the inner surface of the second through hole TH2. Can be.

The metal nanowires 800 may be manufactured by various methods. In one embodiment, the metal nanowires 800 may be manufactured by chemical vapor deposition. The metal nanowires 800 may be manufactured by low pressure chemical vapor deposition, atmospheric pressure chemical vapor deposition, high pressure chemical vapor deposition, or plasma chemical vapor deposition. For example, by depositing a seed layer (or base layer) that can function as a production nucleus of the metal nanowires 800 on the substrate, and reacting the source gas containing a metal on the seed layer to the metal nano Wires 800 may be manufactured. As the seed layer, a transition metal or the like may be used.

In another embodiment, the metal nanowires 800 may be manufactured by a laser ablation method. For example, the metal nanowires 800 may be formed by mounting a specimen made by mixing a transition metal and a bulk metal for synthesis of a wire in a predetermined ratio inside the quartz tube, and vaporizing the specimen using a laser from the outside. Can be.

In another embodiment, the metal nanowires 800 may be manufactured using a template. In more detail, the metal nanowire 800 may include: injecting a metal nanowire precursor into a template including a hollow channel; And crystallizing the metal nanowire precursor to form a metal nanowire.

The metal nanowire precursor may use a liquid phase or a gaseous precursor. The metal nanowire precursor is silver (Ag), aluminum (Al), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo) It may include a material selected from the group consisting of ruthenium (Ru), indium (In), tungsten (W) and combinations thereof. For example, a liquid precursor for preparing silver (Ag) nanowires may use a metal salt form of AgNO ₃ .

Subsequently, the metal nanowires may be formed by crystallizing the metal nanowires precursor. The crystallization process may be used without particular limitation as long as it is a crystallization process commonly known in the art such as ultraviolet irradiation, microwave irradiation, and heat treatment. By the crystallization process, the precursor may undergo a crystallization reaction by a reduction reaction. Thereafter, a process of removing the template may be performed.

In another embodiment, the metal nanowire 800 is a step of heating a solvent; Adding and capping agent and catalyst to said solvent; It can be prepared by a process comprising the step of forming a metal nanowires by adding a metal compound to the solvent.

As the solvent, a polyol may be used. Such polyols may serve as a solvent for mixing different materials, and together with a mile reducing agent, to help form metal nanowire precursors. The reaction temperature may be variously adjusted in consideration of the type and characteristics of the solvent and the metal compound. For example, when forming silver nanowires using propylene glycol having excellent reducing power as a solvent, the reaction temperature may be about 80 ° C to about 140 ° C.

Subsequently, in the step of adding a capping agent and a catalyst to the solvent, a capping agent and a catalyst for inducing metal nanowire precursor formation are added to the solvent. If the reduction for forming the metal nanowire precursor is made too fast, it is difficult to form a wire shape as the metals aggregate, such a capping agent serves to prevent the aggregation by appropriately dispersing the material in the solvent. As the capping agent, various materials may be used. For example, polyvinylpyrrolidine (PVP), polyvinyl alcohol (PVA), cetyltrimethylammonium bromide (CTAB), cetyltrimethylammonium chloride (CTAC), polyacrylamide ( PAA) etc. can be used. The catalyst may be a material selected from the group consisting of AgCl, KBr, KI, CuCl ₂ , PtCl ₂ , H ₂ PtCl ₄ , H ₂ PtCl ₆ , AuCl, AuCl ₃ , HAuCl ₄ , HAuCl ₂ and combinations thereof. The catalyst may be added by 0.005 to 0.5 parts by weight based on 100 parts by weight of the metal compound.

 Subsequently, in the step of adding a metal compound to the solvent, a metal compound is added to the solvent to form a reaction solution. In this case, the metal compound may be added to a solvent to which a capping agent and a catalyst are added while dissolved in a separate solvent. As a separate solvent, the same material or different materials as the solvent used for the first time may be used. And, the metal compound may be added after a certain time after the addition of the catalyst. This is to stabilize the temperature to an appropriate reaction temperature.

Here, the metal compound is a compound containing a metal for forming the metal nanowires to be manufactured. For example, in order to form silver nanowires, AgCl, AgNO ₃ or KAg (CN) ₂ may be used as the metal compound. As such, when the metal compound is added to the solvent to which the capping agent and the catalyst are added, the reaction occurs and the formation of metal nanowires begins. Finally, the step of purifying the metal nanowire may be further performed. More specifically, when acetone, which is a nonpolar solvent, is added to the reaction solution, the metal nanowires are precipitated in the lower portion of the solution by the capping agent remaining on the surface of the metal nanowires. This is because the capping agent dissolves well in the solvent but does not dissolve in acetone, but aggregates and precipitates. Subsequently, the supernatant solution is discarded to remove some of the capping agent and the formed nanoparticles. When the distilled water is added to the remaining solution, the metal nanowires and the metal nanoparticles are dispersed, and when acetone is added, the metal nanowires are precipitated and the metal nanoparticles are dispersed in the upper solution. Subsequently, the supernatant solution is discarded to remove some of the capping agent and the metal nanoparticles formed by aggregation. Repeat this process to collect the metal nanowires and store them in distilled water. By storing the metal nanowires in distilled water, it is possible to prevent the metal nanowire precursors from reaggregating.

7 and 8, the metal nanowires 800 formed on the inner wall of the second through hole TH2 are selectively removed. As mentioned above, the metal nanowire 800 is a conductive material. When the metal nanowire 800 is formed on the inner wall of the second through hole TH2, the metal nanowire 800 is formed. A current may leak from the connection wiring 700 to the light absorbing layer 300 in the surroundings. In order to solve the above problems, the manufacturing method of the solar cell module according to the embodiment can prevent the current leakage by completely removing the metal nanowires 800 on the inner wall of the second through hole (TH2). .

The metal nanowires 800 formed on the inner wall of the second through hole TH2 may be removed by various methods. For example, the metal nanowire 800 may be removed by a mechanical scribing or laser process, and more specifically, may be removed by a laser process, but is not limited thereto.

The laser process may be performed by irradiating the laser inclined to the inner wall of the second through hole TH2 as shown in FIG. 7. Accordingly, the metal nanowires 800 formed on the inner wall of the second through hole TH2 may be selectively removed.

Alternatively, the laser process may be performed by irradiating a laser perpendicularly to the second through hole TH2. In this case, by adjusting the size and / or shape of the laser beam spot, the lower surface of the second tube groove TH2 may be damaged, and only the inner wall of the second through hole TH2 may be damaged. have. According to the size and / or shape of the beam spot, the inner wall of the second through hole TH2 may have various shapes such as a circle, an ellipse, and a polygon.

In the laser process, laser beams of various wavelength ranges may be used. For example, the wavelength of the laser beam may be about 120 nm to about 3000 nm. In addition, the laser beam has a processing power of about 0.3 watts to about 10 watts, a pulse width of about 100 fs to about 100 ns at about 20 khz, and a repetition rate of about 100 khz to about 300 khz. However, it is not limited thereto. As the wavelength of the laser beam is shorter, fine and precise processing is possible, and thus the processing performance is improved, and the longer the wavelength of the laser beam, the lower the price of the system is.

Subsequently, referring to FIG. 9, a transparent conductive material is stacked on the high resistance buffer layer 500 and the second through hole TH2 to form the front electrode layer 600. For example, the front electrode layer 600 may be formed by a method of depositing using a ZnO target by an RF sputtering method, reactive sputtering using a Zn target, and an organic metal chemical vapor deposition method.

The connection wiring 700 is formed together in the process of forming the front electrode layer 600. That is, in the process of depositing the transparent conductive material on the high-resistance buffer layer 500, the transparent conductive material may be formed in the second through-hole TH2 to form the connection wiring 700. Accordingly, the connection wiring 700 electrically connects the rear electrode layer 200 and the front electrode layer 600.

Subsequently, referring to FIG. 10, the front electrode layer 600 is penetrated by the third through holes TH3. The third through holes TH3 may be formed by a mechnical method, and a part of the rear electrode layer 200 is exposed. For example, the width of the third through-holes TH3 may be about 80 [mu] m to about 200 [mu] m, but is not limited thereto. The front electrode layer 600 may be divided into a plurality of front electrodes 610 and 620 .. by the third through grooves TH 3 and a plurality of solar cells C1, ) Can be defined.

Features, structures, effects, and the like described in the above embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (15)

A rear electrode layer disposed on the supporting substrate;
A light absorbing layer disposed on the rear electrode layer;
A front electrode layer disposed on the light absorbing layer; And
A connection wiring penetrating the light absorbing layer and electrically connecting the rear electrode layer and the front electrode layer;
The light absorbing layer includes a through groove that penetrates the light absorbing layer and exposes a part of the back electrode layer.
The front electrode layer and the connection wirings each include metal nanowires,
The metal nanowires are distributed in the interface between the rear electrode layer and the connection wiring exposed by the through groove.
The method of claim 1,
The width of the connection wiring is different depending on the position of the solar cell module.
3. The method of claim 2,
The width of the connection wiring increases as the distance from the back electrode layer.
3. The method of claim 2,
The width of the connection wiring is the widest solar cell module in the middle region of the connection wiring.
The method of claim 4, wherein
The connection wiring,
An upper region connected to the front electrode layer, a lower region connected to the rear electrode layer, and an intermediate region disposed between the upper region and the lower region,
The solar cell module with the widest width | variety of the connection wiring of the said intermediate region.
The method of claim 1,
The diameter of the metal nanowire is 5 nm to 20 nm,
The metal nanowire has a length of 0.1 ㎛ to 10 ㎛ solar cell module.
The method of claim 1,
The metal nanowires are silver (Ag), aluminum (Al), calcium (Ca), chromium (Cr), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), molybdenum (Mo), A solar cell module comprising a material selected from the group consisting of ruthenium (Ru), indium (In), tungsten (W), and combinations thereof.
delete The method of claim 1,
The connection wiring extends downward from the front electrode layer and is gap-filled in the through groove.
delete Forming a back electrode layer on the support substrate;
Forming a light absorbing layer on the back electrode layer;
Forming a through hole penetrating the light absorbing layer;
Forming metal nanowires on the light absorbing layer and in the through grooves;
Etching metal sidewalls of the through grooves to remove metal nanowires formed on the sidewalls of the through grooves; And
Forming a front electrode layer on the light absorbing layer and forming a connection wiring in the through groove.
The method of claim 11,
The metal nanowires,
Injecting a metal nanowire precursor into a template including a hollow channel; And
A method of manufacturing a solar cell module prepared by crystallizing the metal nanowire precursor.
The method of claim 11,
The metal nanowires,
Heating the solvent;
Adding and capping agent and catalyst to said solvent; And
A method of manufacturing a solar cell module prepared by adding a metal compound to the solvent to form metal nanowires.
The method of claim 13,
The catalyst is a solar cell comprising a material selected from the group consisting of AgCl, KBr, KI, CuCl ₂ , PtCl ₂ , H ₂ PtCl ₄ , H ₂ PtCl ₆ , AuCl, AuCl ₃ , HAuCl ₄ , HAuCl ₂ and combinations thereof Module manufacturing method.
The method of claim 13,
The solvent is a method for manufacturing a solar cell module comprising a material selected from the group consisting of propylene glycol (PG), 1,3-propanediol, dipropylene glycol and combinations thereof.

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