KR101282302B1 - Sensing device having multi beam antenna array - Google Patents

Abstract

The present invention relates to a sensing device having a multiple beam antenna array. Sensing apparatus according to an embodiment of the present invention includes an antenna array having a plurality of antennas; A plurality of low noise amplifiers connected to each antenna for amplifying radio frequency signals received from each antenna; A delay line box having a plurality of delay lines, each delay line delaying amplified signals of the plurality of low noise amplifiers for a predetermined time? And a detector for detecting an output signal of the delay line box.

Three dimensional stack, through silicon via, interposer, multibeam, side lobe, microantenna arrays, solder bump

Description

Sensor with multi-beam antenna array {SENSING DEVICE HAVING MULTI BEAM ANTENNA ARRAY}

The present invention relates to a sensing device, and more particularly to a sensing device having a multi-beam antenna array.

A sensing device is a device for detecting a shape of an object using a lens or an antenna and expressing the image as an image. The sensing device can be used to search for hidden objects, to locate the firing point in smoke, or to allow flying objects to avoid obstacles in fog or cloudy weather conditions. Such sensing devices include optical cameras and RF cameras.

1 is a conceptual diagram illustrating an optical camera by way of example. Referring to FIG. 1, the optical camera 10 is detected by a light sensor 13 after a light beam 11 passes through the optical lens 12.

2 is a conceptual diagram illustrating an RF camera by way of example. Referring to FIG. 2, in the RF camera 20, an electromagnetic beam 21 passes through an antenna array 22 and a microwave lens 23, and then a detector array 24. Is detected). The RF camera 20 may detect an image of a target object even with an obstacle that does not optically pass through.

Conventional antenna arrays and sensing devices comprising the same have complicated and costly antenna design and manufacturing processes.

The present invention has been proposed to solve the above problems, and an object of the present invention is to provide a sensing device having a multi-beam antenna array that can simplify the antenna design and manufacturing process, and can reduce the manufacturing cost. .

According to an embodiment of the present invention, a sensing apparatus having a multi-beam antenna array includes an antenna array having a plurality of antennas; A plurality of low noise amplifiers connected to each antenna for amplifying radio frequency signals received from each antenna; A delay line box having a plurality of delay lines, each delay line delaying amplified signals of the plurality of low noise amplifiers for a predetermined time? And a detector for detecting an output signal of the delay line box.

In an embodiment, the antenna array is manufactured by a MEMS process. The antenna array is a timed array. The antenna array may be used in a hamming antenna array scheme.

In another embodiment, the delay line box may include a load resistor connected between both ends of the plurality of delay lines and a ground terminal. The detector may be implemented with a diode. The diode may be a millimeter wave zero bias GaAs Schottky Diode or a tunnel diode.

Another aspect of the sensing device having a multi-beam antenna array according to an embodiment of the present invention is an upper wafer; And an antenna made of a lower wafer bonded to the upper wafer, wherein the antenna has an air cavity formed between the upper wafer and the lower wafer.

In an embodiment, a slot pattern is formed on the bonding joint of the lower wafer. Patches are formed on the upper wafer, and feed lines are formed on the lower wafer.

In another embodiment, the sensing device comprises a substrate; And an interposer formed between the antenna and the substrate. The substrate may be made of silicon, GaAs, LTCC, or ceramic.

According to the sensing device having the multi-beam antenna array according to the embodiment of the present invention, the antenna design and manufacturing process can be simplified, and the manufacturing cost can be reduced.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention.

In general, when one antenna is used, a single beam pattern is produced. However, it may be difficult to obtain a desired beam width and antenna gain with one antenna. Therefore, a multi beam antenna array is used which arranges multiple antennas according to specific rules.

A multi beam antenna array may be divided into a timed array and a phased array. A timed array has a large instantaneous bandwidth and a constant group delay. On the other hand, a phased array has a small instantaneous bandwidth but a constant phased shift. The timed array includes a scanning antenna array method and a multi beam staring array method.

3 is a conceptual diagram illustrating a sensing device using a scanning antenna array scheme by way of example. Referring to FIG. 3, the sensing device 100 includes an antenna array 120, a plurality of time varyers 130, and a combiner 140. The sensing device 100 shown in FIG. 3 uses the antenna array 120 and the plurality of time varyers 130 to time-modulate the radio frequency signals RFin1 to RFin4 of one beam 110. Scan. The combiner 140 combines the signals received in a time varying manner and outputs the signals as one electrical signal RFout.

4 is a conceptual diagram illustrating a sensing device using a multi-beam non-scanning array scheme by way of example. Referring to FIG. 4, the sensing device 200 includes an antenna array 220 and a multi beam matrix 230. The sensing device 200 illustrated in FIG. 4 receives radio frequency signals RF1 to RF4 of the multiple beams 210 through four antennas 220.

The multi-beam matrix 230 outputs a plurality of electrical signals RFout1 to RFout5 using the received signal. Here, the number of output electrical signals is equal to the number of multiple beams. The sensing device 200 using the multi-beam non-scanning array method can reduce the image capture time.

The multi-beam matrix 230 includes a microwave lens, a circuit using a timed delay, a circuit using a delay line, and the like. The multi-beam matrix 230 may be divided into a 1D structure connected to two antennas and a 2D structure connected to four antennas. In the following, various sensing devices with multiple beam antenna arrays and multiple beam metrics will be described.

5 and 6 show a sensing device using a microwave lens as a multi-beam matrix. 5 shows a multiple beam matrix 1D structure of a microwave lens. 6 shows a multi-beam matrix 2D structure of the microwave lens.

Referring to FIG. 5, the sensing device 300 includes two antennas 320, an RF cable 330, an outer lens 340, and an inner lens 350. The sensing device 300 shown in FIG. 5 receives radio frequency signals of the multiple beams 310 through two antennas 320 and an RF cable 330. The received signal passes through the external lens 340 and the internal lens 350 and is output through the input / output terminals I / 01, I / O2, and I / O3.

Referring to FIG. 6, the sensing device 400 includes four antennas 420 and a multi-beam matrix 430 including five microwave lenses. The internal configuration of each microwave lens is the same as that shown in FIG. The sensing device 400 shown in FIG. 6 receives radio frequency signals of multiple beams 410 with 3x3 directions through four antennas 420. The received signal passes through the multiple beam matrix 430 and is output to a 3x3 detector array (not shown) through nine input / output terminals.

7 and 8 show a sensing device using a circuit comprising a time delay with multiple beam metrics. 7 shows a multi-beam matrix 1D structure, and FIG. 8 shows a multi-beam matrix 2D structure.

Referring to FIG. 7, the sensing device 500 includes two antennas 520, two dividers 530, six time delays 540, three combiners 550, and three input / output terminals 560. It includes. The sensing device 500 illustrated in FIG. 7 receives radio frequency signals of the multiple beams 510 through two antennas 520. The divider 530 divides the received signal into three signals. The time delay unit 540 delays the distributed signal according to a preset delay time. The combiner 550 combines the signals output from the corresponding time delay. The input / output terminal 560 outputs the combined signal.

Referring to FIG. 8, the sensing device 600 includes four antennas 620 and multiple beam metrics 630. The multi-beam matrix 630 consists of five metrics shown in FIG. The internal configuration of each matrix is the same as that shown in FIG. The sensing device 600 shown in FIG. 8 receives radio frequency signals of multiple beams 610 with 3x3 directions through four antennas 620. The received signal passes through the multiple beam matrix 630 and is output to a 3x3 detector array (not shown) through nine input / output terminals 640.

9 and 10 show a sensing device according to an embodiment of the present invention. The multiple beam metrics of the sensing devices 700, 800 shown in FIGS. 9 and 10 use relatively light and simple elements such as delay lines and diodes.

9 illustrates a sensing apparatus 700 having a multi-beam matrix 1D structure according to an embodiment of the present invention. 9, a sensing apparatus 700 according to an embodiment of the present invention includes two antennas 720, two low noise amplifiers LNA 730, two load resistors RL and 740, and a plurality of delay lines. (DL; Delay Line, 750), and three detectors (760). Here, the sensing device 700 according to the embodiment of the present invention may include a larger number of delay lines 750 or detectors 760 than those shown in FIG. 9.

The sensing device 700 illustrated in FIG. 9 receives radio frequency signals of the multiple beams 710 through two antennas 720. The low noise amplifier (LNA) 730 amplifies the weak signal received through the antenna 720. The load resistors RL and 740 are connected to the ground terminal. A plurality of delay lines DL and 750 are connected in series between the two load resistors 740. Each delay line is a unit delay cell and may be implemented to have the same delay time.

The signal amplified by the low noise amplifier (LNA) 730 is passed to the detector 760 via one or more delay lines 750. The detector 760 is implemented using a device having good voltage sensitivity, and outputs the detected electrical signal through the output terminals I / O1, I / O2, and I / O3. For example, the detector 760 may be implemented as a millimeter wave zero bias GaAs Schottky Diode or a tunnel diode having good voltage sensitivity.

10 illustrates a sensing device 800 having a multi-beam matrix 2D structure according to an embodiment of the present invention. Referring to FIG. 10, the sensing device 800 includes four antennas ANT1 to ANT4 and 820, four low noise amplifiers LAN and 830, a plurality of load resistors RL and 840, and a plurality of transconductance amplifiers. amplifier 845, a plurality of delay lines DL, 850, nine detectors 860, and a 3x3 detector array 870.

The sensing device 800 shown in FIG. 10 receives radio frequency signals of the multiple beams 810 having 3x3 directions through four antennas ANT1 to ANT4 and 820. The signal amplified by the low noise amplifier (LNA) 830 is passed through one or more delay lines DL and transconductance amplifier 845 to nine detectors 860 with good voltage sensitivity. Each detected electrical signal is routed to an output terminal via a 3x3 detector array

Is output to 870.

The current sensitivity of the diode used as the detector 860 may be represented by Equation 1 below.

Where T is the Kelvin temperature and n, q, and k are constants.

Junction resistance of the diode can be represented by the following [Equation 2].

Where T is the Kelvin temperature, I is the bias current, and n, q and k are constants

When diode resistance is greater than the load resistance, voltage sensitivity is expressed as the product of current sensitivity and junction resistance and is independent of temperature. Equation 3 below shows the voltage sensitivity of the diode.

In a special case, the voltage sensitivity can be reduced by the junction capacitance and series resistance of the diode. Equation 4 below shows the voltage sensitivity of the diode in a special case.

Referring to Equation 4, the voltage sensitivity of the diode has a temperature dependency due to the junction resistance (R _j ). For example, suppose I = 0.02mA, R _B = 25Ω, Cj = 0.1pF, and f = 10GHz. At this time, the voltage sensitivity of the diode is expressed by Equation 5 below.

According to [Equation 5], it can be seen that the voltage sensitivity of the diode has an independent characteristic which is hardly influenced by temperature. Therefore, the sensing apparatuses 700 and 800 illustrated in FIGS. 9 and 10 are less affected by the temperature of the external environment.

In addition, since the sensing apparatuses 700 and 800 illustrated in FIGS. 9 and 10 require a small number of elements, and use light elements (for example, delay lines or diodes), the sensing apparatuses 700 and 800 can be implemented at a light and low cost. have. In addition, since the sensing apparatuses 700 and 800 according to the embodiment of the present invention have a relatively simple circuit configuration, they are easy to design and advantageously integrated.

FIG. 11 is a circuit diagram illustrating the antennas ANT1 to ANT4 and 820, the low noise amplifiers LNA 830, and the delay line box 850 illustrated in FIG. 10. Referring to FIG. 11, radio frequency signals input through four antennas ANT1 to ANT4 and 820 are amplified by four low noise amplifiers LAN1 to LNA4 and 830. The amplified signal is input to delay line box 850. Delay line box 850 has four input terminals IN1 to IN4 and nine output terminals OUT1 to OUT9. The delay line box 850 outputs a signal delayed by a predetermined time.

FIG. 12 is a circuit diagram of a delay line box 850 illustrated in FIG. 11 in a plan view. Referring to FIG. 12, the delay line box 850 includes four input terminals IN1 to IN4, four load resistors RL, a plurality of delay lines DL, and nine output terminals OUT1 to OUT9. Include. Each delay line DL is a unit delay cell, and may delay a signal a predetermined time τ. The delay line box 850 delays the signals input to the four input terminals IN1 to IN4 by an integer multiple of the unit delay cells, and then outputs the signals to the nine output terminals OUT1 to OUT9. Delay line box 850 sends the output signal to a detector (see FIG. 10, 860).

FIG. 13 is a block diagram illustrating a process of processing signals OUT1 to OUT9 output from the delay line box 850 illustrated in FIG. 12. Referring to FIG. 13, the output signals OUT1 to OUT9 of the delay line box 850 may include a detector 860, a low pass filter (LPF) 871, an integrator 872, and a capacitor 873. And then through the multiplexer (MUX, 874).

The low pass filter 871 passes signals in a frequency band lower than a given cutoff frequency and blocks signals in a higher frequency band. That is, the low pass filter 871 filters only signals of a low frequency band among the signals passing through the detector 860. The signal passed through low pass filter 871 is provided to integrator 872. The integrator 872 outputs the signal passing through the low pass filter 871 as an integral value over time. The signal passing through integrator 872 is stored in capacitor 873 and then provided to multiplexer 874. The multiplexer 874 selects one of the nine input signals and outputs the selected signal according to the clock signal CLK.

The output signal of the multiplexer 874 is provided to an analog-to-digital converter (ADC) 891 via a wireless TSV (wireless through silicon via) 880. The wireless TSV 880 can use inductance coupling 881 to transfer signals between wafers without through silicon vias (TSVs). An analog-to-digital converter (ADC) converts the electrical analog signal of the wireless TSV 880 into a digital signal. The converted digital signal is provided to the digital signal processing unit 892.

FIG. 14 is a flowchart illustrating a signal processing process of the digital signal processing unit 892 illustrated in FIG. 13. The digital signal processing unit 892 performs a 2D depth image to obtain distance information of each pixel of the detector array (see FIG. 10, 870) from the 2D image low data S110 (S120). The digital signal processing unit 892 uses the 2D depth image to obtain a 3D image.

The digital signal processing unit 892 sequentially performs 3D Cartesian integration (S130), 3D image visualization (S140), and 3D image processing (S150) to obtain a high resolution 3D image. Here, the 3D Cartesian integration (S130) uses a volumetric pixel method that well represents a cube pixel having a specific volume. The digital signal processing unit 892 performs 3D image cropping (S160) or 3D image deconvolution (S170) in order to obtain a clear image according to the depth information of the displayed image. The 3D image deconvolution S170 is performed to compensate for timing responses, noise, range tail, etc. of the detector 860.

15 is a flowchart illustrating a method of manufacturing an antenna of a sensing device according to an embodiment of the present invention. In FIG. 15, process (a) shows a process step of a top wafer, and process (b) shows a process step of a bottom wafer. And (c) shows the step of combining the upper wafer and the lower wafer and manufacturing the antenna.

Referring to FIG. 15A, in step S210, after cleaning the upper wafer 31, masking is performed for deep reactive-ion etching (DRIE), and deep reactive-ion etching (DRIE) is performed. It is about 150um. In operation S215, the upper surface 32 of the upper wafer 31 is subjected to chemical mechanical polishing (CMP) so that the thickness of the upper wafer 31 is about 200 μm. In order to bond with the lower wafer, Au / Ti is used to form a bonding pattern 33 having a thickness of about 500A to 30000A.

Referring to FIG. 15B, in step S220, the lower wafer 41 of about 650 μm to 700 μm is cleaned. In step S225, a bonding pattern 43 having a thickness of 500A to 30000A is deposited using Au / Ti for bonding to the upper wafer 31. Next, a masking operation for the slot pattern 45 is performed and dry etching is performed.

Referring to FIG. 15C, in operation S230, the upper wafer 31 and the lower wafer 41 are bonded to each other. Then, Au / Ti having a thickness of about 500A to 10000A is deposited on the upper surface of the upper wafer 31, and masking and dry etching operations for the patch pattern 51 are performed. In the step S240, the lower surface of the lower wafer 41 is CMP, so that the total thickness of the upper wafer 31 and the lower wafer 41 is about 300 um. In operation S250, a microstrip line pattern is masked on the lower surface of the lower wafer 41, followed by dry etching to form a feed line 52.

16 is a cross-sectional view illustrating a structure of a sensing device according to an embodiment of the present invention. In FIG. 16, an antenna consisting of a patch 901, an upper wafer 902, an air cavity 903, a slot 904, a lower wafer 905, and a feed line 906 (see FIG. 10, 820) is shown in FIG. It is prepared by the procedure described in 15.

An interposer 908 is positioned between the antenna and the PCB 910. The antenna and interposer 908 are connected to a TSV 907 filled with an intermetallic compound. The interposer 908 and the PCB 910 are connected through the sold ball 909. Here, the PCB substrate 910 may be made of silicon, GaAs, LTCC, ceramic, or the like. The interposer 908 may include two-dimensional chips such as a processor (not shown) in addition to a detector (eg, millimeter wave zero bias GaAs Schottky Diode) (see FIG. 10, 860). Between the antenna and the interposer 908 or within the interposer 908, between wafers or chips, electrical signals or data may be transferred in a wireless TSV (wireless TSV) manner.

FIG. 17 shows an embodiment of inductance coupling of the interposer 908 shown in FIG. 16. Figure 17 (a) shows the inductive coupling in three dimensions, Figure 17 (b) shows in cross-section.

Referring to FIGS. 17A and 17B, an inductor 1002 is formed on three wafers 1001. An inductance coupling 1005 may be formed between the inductor 1002 and the inductor 1003 by a magnetic field. The two wafers can be connected to a wireless TSV due to inductance coupling. The RDL layer may consist of a dielectric made of a polymer or oxide layer and metallization. Vertical connections of metal wires can be connected by forming vias in the dielectric. The interposer 1004 can be used as a medium for fabricating high density systems or subsystems on silicon and mounting them on PCBs.

FIG. 18 shows another embodiment of inductance coupling of the interposer 908 shown in FIG. 16. Referring to FIGS. 18A and 18B, the wireless TSV is connected to the silicon wafer 1101 by an inductance coupling 1104 by a magnetic field from an inductor 1102 to an inductor 1103. Connect with The RDL layer consists of a dielectric made of a polymer or oxide layer and metallization. Vertical connections of metal wires form vias in the dielectric. The wireless TSV can be used as a medium for building high density systems or subsystems on silicon and mounting them on PCBs.

The sensing apparatus according to the embodiment of the present invention can implement a 3D stacked layer in a simple and simple process by using a wireless TSV method using inductance coupling instead of the TSV.

19 and 20 are graphs illustrating a beam pattern (refer to FIG. 19) and a return loss of FIG. 19 of an antenna array of a sensing apparatus according to an exemplary embodiment of the present invention. 19 and 20 show a difference between a normal antenna array method having a 4x4 antenna array and a hamming antenna array method.

Referring to FIG. 19, the normal antenna array method has a difference of about 13 to 15 dBi between the main lobe and the side lobe. On the other hand, the Hamming antenna array method has a difference of about 18 to 19 dBi between the main lobe and the side lobe. Referring to FIG. 20, it can be seen that the return loss difference between the normal antenna array method and the hamming antenna array method is subtle.

21 to 26 are graphs showing a beam pattern of a antenna array and a maximum intensity of each pixel of a sensing device according to an exemplary embodiment of the present invention.

Referring to FIG. 21, the 8x2 hamming antenna array scheme has a difference of about 25 dBi or more between the main lobe and the side lobe. Referring to FIG. 22, it can be seen that the maximum intensity of the 8 × 8 Hamming antenna array is pixel 64. Referring to FIG. 23, the 16 × 2 hamming antenna array scheme has a difference of about 20 dBi or more between the main lobe and the side lobe. Referring to FIG. 24, it can be seen that the maximum intensity of the 16 × 16 Hamming antenna array is the pixel 254. Referring to FIG. 25, the 32 × 2 hamming antenna array scheme has a difference of about 25 dBi or more between the main lobe and the side lobe. Referring to FIG. 26, it can be seen that the maximum intensity of the 32x32 hamming antenna array is pixel 1024.

The sensing device according to an embodiment of the present invention uses a multi beam antenna array. Multibeam antenna arrays are attractive in both communications and imaging systems, both narrowband and broadband. Compared with electronically scanned antenna arrays, multi-beam communication systems are more suitable in multi-user. In an imaging system, a multi-beam system can achieve full spatial resolution coverage in a real-time environment. Moreover, the multi beam system can provide more accurate information of the image in the scattering environment.

Sensing device according to an embodiment of the present invention can help the unmanned vehicle or helicopter to avoid obstacles or landing even in foggy and cloudy weather conditions, can find the location of the ignition point in the smoke, detect the hidden weapons It can be used to guide missiles in dust or smoke.

In addition, the sensing device according to the embodiment of the present invention may have a light rate, low cost, small size, simple, low power consumption, rugged and low frequency video rate. Therefore, the present invention can be applied to an image sensing microantenna arrays system, and a lot of image information can be obtained within a small time.

The sensing device according to the present invention can detect an image using a zero bias schottky diode or a tunnel diode for low cost, and can be implemented by a silicon CMOS process for low cost. In addition, the present invention can use a 3D stacked layer process for small size, light weight and simplicity.

On the other hand, as the clock speed of a system increases recently, delay, noise, and power consumption due to the interconnection between elements become a problem to improve the performance of the system. Accordingly, there is a need for minimizing interconnection. According to the sensing device and the manufacturing method thereof according to the present invention, the 3D stacked layer can shorten the length of the interconnection, thereby reducing delay, noise, high bandwidth, and power consumption.

The 3D stacked layer technology of silicon chips using TSV has been in the spotlight in terms of improving integration, minimizing interconnection length and giving freedom of routing. However, since the conventional stacked layer technology is expensive in process, it is difficult to spread the technology. In particular, the filling technology and the bonding technology of the chip, which fills the TSV, have a problem of high cost and low reliability. However, according to the manufacturing method according to the present invention, since the inductance coupling method is used, the cost can be reduced and the reliability can be increased.

On the other hand, in the detailed description of the present invention has been described with respect to specific embodiments, of course, various modifications are possible without departing from the scope of the invention. Therefore, the scope of the present invention should not be limited to the above-described embodiments, but should be determined by the equivalents of the claims of the present invention as well as the claims of the following.

1 is a conceptual diagram illustrating an optical camera by way of example.

2 is a conceptual diagram illustrating an RF camera by way of example.

3 is a conceptual diagram illustrating a sensing device using a scanning antenna array scheme by way of example.

4 is a conceptual diagram illustrating a sensing device using a multi-beam non-scanning array scheme by way of example.

5 and 6 show a sensing device using a microwave lens as a multi-beam matrix.

7 and 8 show a sensing device using a circuit comprising a time delay with multiple beam metrics.

9 illustrates a sensing device having a multi-beam matrix 1D structure according to an embodiment of the present invention.

10 illustrates a sensing device having a multi-beam matrix 2D structure according to an embodiment of the present invention.

FIG. 11 is a circuit diagram illustrating an antenna, a low noise amplifier, and a delay line box shown in FIG. 10.

FIG. 12 is a circuit diagram schematically illustrating a delay line box of FIG. 11.

FIG. 13 is a block diagram illustrating a process of processing signals OUT1 to OUT9 output from the delay line box illustrated in FIG. 12.

FIG. 14 is a flowchart illustrating a signal processing procedure of the digital signal processing unit illustrated in FIG. 13.

15 is a flowchart illustrating a method of manufacturing an antenna of a sensing device according to an embodiment of the present invention.

16 is a cross-sectional view illustrating a structure of a sensing device according to an embodiment of the present invention.

FIG. 17 illustrates an embodiment of inductance coupling of the interposer illustrated in FIG. 16.

FIG. 18 shows another embodiment of inductance coupling of the interposer shown in FIG. 16.

19 and 20 are graphs showing a beam pattern (refer to FIG. 19) and a return loss (refer to FIG. 20) of an antenna array of a sensing device according to an exemplary embodiment of the present invention.

21 to 26 are graphs showing a beam pattern of a antenna array and a maximum intensity of each pixel of a sensing device according to an exemplary embodiment of the present invention.

Claims (20)

delete delete delete delete delete delete delete delete delete In a sensing device having a multi-beam antenna array: Upper wafer; And Including an antenna made of a lower wafer bonding bonding to the upper wafer, And the antenna has an air cavity formed between the upper wafer and the lower wafer. 11. The method of claim 10, And a slot pattern is formed on the bonding coupling portion of the lower wafer. The method of claim 11, A patch is formed on the upper wafer, And a feed line formed on the lower wafer. 11. The method of claim 10, Board; And And an interposer formed between the antenna and the substrate. The method of claim 13, And the substrate is made of silicon, GaAs, LTCC, or ceramic. The method of claim 13, And the substrate and the interposer are connected through sold balls. The method of claim 13, And the interposer and the antenna are connected through a TSV. The method of claim 13, And the interposer is integrated with a diode for detecting electrical characteristics of a signal input through the antenna. 18. The method of claim 17, And the diode is a millimeter wave zero bias GaAs Schottky Diode. 18. The method of claim 17, The diode is a sensing device, characterized in that the tunnel diode. The method of claim 13, And the antenna and the interposer transmit signals using inductance coupling.

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