KR101275019B1 - Oxide film remover for improvement in the quality of electro painting and removing method of oxide film - Google Patents

Oxide film remover for improvement in the quality of electro painting and removing method of oxide film Download PDF

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KR101275019B1
KR101275019B1 KR1020120012345A KR20120012345A KR101275019B1 KR 101275019 B1 KR101275019 B1 KR 101275019B1 KR 1020120012345 A KR1020120012345 A KR 1020120012345A KR 20120012345 A KR20120012345 A KR 20120012345A KR 101275019 B1 KR101275019 B1 KR 101275019B1
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oxide film
acid
chelating agent
remover
acetic acid
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Korean (ko)
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KR101275019B9 (en
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정동주
정성구
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주식회사 성진케미칼
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    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34Pretreatment of metallic surfaces to be electroplated
    • C25D5/42Pretreatment of metallic surfaces to be electroplated of light metals
    • C25D5/44Aluminium
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/36Phosphatising

Abstract

PURPOSE: An oxide film remover and an oxide film removing method for improving electro-painting quality are provided to effectively remove a heat-affected oxide film formed on a metal surface by using the oxide film remover of a chelating agent, thereby improving corrosion resistance of painting quality. CONSTITUTION: An oxide film remover for improving electro-painting quality is obtained by using 2-20 w/v% chelating agent which has pH 2-7 when diluted with a solvent and is measured by a 0.1N-KMnO4 thermal oxidation-reduction titration method, in order to remove an oxide film generated on a metal surface in an electro-painting process. The chelating agent is formed in a way that the consumption of 0.1N-NaOH for 5 ml sample of the oxide film remover is 5-30 ml. The chelating agent material is selected among EDTA(Ethylene Diamine Tetra Acetic Acid), DTPA(Diethylene Triamine Penta Acetic Acid), NTA(Nitrilotri Acetic Acid), HEDTA(Hydroxyethyl Ethylenediamine Triacetic Acid), HEDPA(Hydroxyethylidene Diphosphoric Acid), and phosphorous acid. [Reference numerals] (a) Before process; (b) After process; (c) After salt water spreading test

Description

전착도장 품질 향상을 위한 산화막 제거제 및 산화막 제거방법{OXIDE FILM REMOVER FOR IMPROVEMENT IN THE QUALITY OF ELECTRO PAINTING AND REMOVING METHOD OF OXIDE FILM}FIELD OF THE INVENTION [0001] The present invention relates to an oxide film remover and an oxide film removal method for improving electrodeposition coating quality,

본 발명은 금속가공 과정에서 용접 등으로 산화된 흔적이나 용접 그을음 등을 효과적으로 제거하여 인산염 피막과 전착도장의 품질을 향상시킬 수 있는 산화막 제거제 및 산화막 제거방법에 관한 것이다.
TECHNICAL FIELD The present invention relates to an oxide film remover and an oxide film remover which can effectively remove oxidized traces or weld soot during metal processing to improve the quality of the phosphate film and electrodeposition coating.

전착도장(electro painting)에 있어 소재의 청결성은 도장 후 내식성에 절대적 영향을 미친다. 그러므로 전착 도장을 하기 위해서는 먼저 금속표면에 형성된 산화막 등의 제거와 오일류의 세정(탈지) 등의 방법을 시행한 후 인산염 피막을 하고 전착도장을 실시한다. 현재 전착도장을 위한 시행 공정의 일 예로서, 탕세 → 예비탈지 → 본탈지 → 수세 1,2 → 표면조정 → 인산염피막 → 수세 3,4 → 순수세 → 전착도장 → 건조와 같은 절차가 수행되고 있다.In the electro painting, the cleanliness of the material has an absolute effect on the corrosion resistance after painting. Therefore, in order to perform the electrodeposition coating, first the removal of the oxide film formed on the metal surface and the cleaning (degreasing) of the oil flow are performed, and then the phosphate film is coated and the electrodeposition coating is performed. As an example of an implementation process for the electrodeposition coating, there are procedures such as the following: an electrolysis step, a preliminary degreasing, a main degreasing, a water washing, a surface conditioning, a phosphate coating, a water washing, a pure water, an electrodeposition painting, .

인산염 피막처리(Phosphate coating)는 금속의 전처리에서 널리 사용되는 방법들중의 하나로서, 금속 표면을 화학적으로 처리하여 고착성과 안정성이 높은 화합물 피막을 그 표면에 형성시키는 것이다. 인산염 피막처리는 이후 금속의 도장공정에서 도장의 물성 즉 접착력, 내구성, 내식성, 내굴곡성 등을 높이는 필수 요건임이 이 기술분야에 널리 잘 알려진 사실이며, 이러한 인산염 피막처리 이전에는 금속표면을 중화 또는 활성화 등을 위해서 표면조정제를 이용한 표면조정 처리를 대부분 수행한다. 표면조정처리를 위해 사용되는 액상 조정제의 일 예로는 본원 출원인이 특허권자로 있는 국내 특허등록 제101084호 "액상 표면 조정제" 등이 있다. Phosphate coating is one of the widely used methods for pretreatment of metals. It is to chemically treat the metal surface to form a compound coating with high stickiness and stability on its surface. It is well known in the art that phosphate coating is an essential requirement to enhance the physical properties of the coating, such as adhesion, durability, corrosion resistance and flex resistance, in the subsequent metal coating process. Before such a phosphate coating treatment, Etc., most of the surface conditioning treatment using the surface modifier is performed. An example of the liquid phase adjusting agent used for the surface adjusting treatment is the Korean Patent Registration No. 101084 entitled " Liquid Surface Conditioning Agent ", which is a patentee of the present application.

상기와 같은 금속의 도장이나 또는 금속의 도금, 기타 금속에 대한 표면처리 등을 수행할 경우 금속 표면에 금속표면 피막형성에 악영향을 끼치는 녹을 포함하는 산화막(스케일)이 뜻하지 않게 발생한다. 상기 산화막은 용접 열 영향부, 녹, 오일 버닝(oil burning)현상 등에 의해서 생성되는 대표적인 예들이 있으며, 오일버닝현상은 방청 또는 프레스를 목적으로 강판에 도포된 오일이 대기시간이나 용접 등의 공정에 의해 고착되는 현상을 일컫는다. When the above-mentioned metal coating, metal plating, or other metal surface treatment is performed, an oxide film (scale) containing rust adversely affecting the formation of the metal surface film on the metal surface occurs unexpectedly. There are typical examples of the oxide film formed by welding heat affected part, rust, oil burning phenomenon, etc. Oil burning phenomenon occurs when the oil coated on the steel sheet for rust prevention or press is used for the process such as waiting time or welding And the like.

철이나 아연소재 등과 같은 대부분의 금속 강판의 경우에는 용접을 행하거나 기타 외부적 환경요인으로 인해 열영향부의 금속표면에 도 1과 같은 산화막(스케일)이 발생하게 된다. In the case of most metallic steel sheets such as iron and zinc materials, an oxide film (scale) as shown in Fig. 1 is generated on the metal surface of the heat affected portion due to welding or other external environmental factors.

금속표면에 발생한 산화막의 제거없이 인산염 피막처리를 행하면, 인산염 피막형성시 장애를 일으켜서 인삼염 피막입자가 예컨대 완성차량 업체에서의 피막형성 요구 기준치(예컨대 2~10㎛)를 충촉시키지 못하고 10㎛를 넘어서는 피막입자가 형성되어 장애를 일으키며 결국에는 전착도장공정에 악영향을 끼친다. 또한 염수 분무시험 및 염수 복합부식 시험에 불합격되게 하는 요인으로 작용한다. If the phosphate coating treatment is carried out without removing the oxide film formed on the metal surface, the ginseng salt coating particles may fail to contact the film forming standard value (for example, 2 to 10 탆) The coating film particles are formed to cause disorder, and eventually adversely affect the electrodeposition coating process. It is also a factor that causes the salt water spray test and salt water composite corrosion test to fail.

산화막을 제거하기 위한 종래 기술로는 강산(HCl, H2SO4, H3PO4)을 사용하거나 쇼트블라스트법(shot blasting) 처리를 시행하는 처리방식이 있으나, 강산의 경우에는 작업 환경과 연속 장비의 부식 등의 이유로 공정에 적용하여 시행하기가 사실상 힘들고, 쇼트블라스트법 처리는 소량의 처리가 가능하지만 대량 연속 작업에는 적용이 불가능하다는 문제가 있었다.
Conventional techniques for removing the oxide film include a treatment method using strong acid (HCl, H 2 SO 4 , H 3 PO 4 ) or a shot blasting method. In the case of strong acid, It is practically difficult to apply the process to the process due to corrosion of the equipment, and the shot blast process can be applied to a small amount but it is not applicable to a large quantity continuous process.

따라서 본 발명의 목적은 전착도장을 시행하기 전 금속 소재(철강류, 아연도금, 알루미늄)에 부착되거나 산화되어 있는 산화막을 제거하여 깨끗한 금속 소재 위에 인산염피막을 하고 전착도장을 하므로 도장품질을 향상시키는 산화막 제거제 및 산화막 제거방법을 제공하는데 있다.
Accordingly, an object of the present invention is to provide a method of forming an electrodeposited coating on a metal material by removing an oxide film adhered to or oxidized from a metal material (steel, zinc, or aluminum) before electrodeposition coating, An oxide film removing agent and an oxide film removing method.

상기한 목적에 따라 본 발명은 금속표면에 발생한 산화막 제거를 위해서 금속킬레이트화합물(metal chelate compound) (이하 "킬레이트제" 라 칭함)을 이용한다. According to the above object, the present invention uses a metal chelate compound (hereinafter referred to as "chelating agent") for removing an oxide film formed on a metal surface.

보다 구체적으로, 본 발명은, 전착 도장 공정에서 금속 표면에 발생한 산화막 제거를 위하여 용매에 희석시 pH 2~7이고, 0.1N-KMnO4 열산화환원 적정법으로 측정이 가능한 킬레이트제를 2~20w/v% 사용하여서 산화막 제거제를 얻되, 상기 산화막 제거제 시료 5ml에 대한 0.1N-NaOH 소비량이 5~30ml가 되도록 조성함을 특징으로 한다. More specifically, the present invention relates to a chelating agent having a pH of 2 to 7 and a chelating agent capable of being measured by 0.1N-KMnO 4 thermal oxidation-reduction titration when diluted in a solvent for removal of an oxide film formed on a metal surface in an electrodeposition coating step, v% to obtain an oxide film remover, and the amount of 0.1 N-NaOH consumed per 5 ml of the oxide film remover sample is 5 to 30 ml.

상기에서, 킬레이트제 물질은 E.D.T.A.(Ethylene diamine tetra Acetic Acid), D.T.P.A.(Diethylen Triamine penta Acetic Acid), N.T.A.(nitrilotri Acetic Acid), HEDTA(Hydrozyeter ethylenediamine TriAcetic Acid), HEDPA(Hydroxyethylidene Diphosphoric Acid), 아인산(phosphorous Acid)에서 선택됨을 특징으로 한다.The chelating agent may be selected from the group consisting of EDTA (ethylene diamine tetra acetic acid), DTPA (diethylenetriamine penta acetic acid), NTA (nitrilotriacetic acid), HEDTA (hydroxyethyl ethylenediamine triacetic acid), HEDPA (hydroxyethylidene diphosphoric acid) Acid).

또 본 발명에서는 상기의 킬레이트제를 이용하여 전착도장 전처리공정의 탕세공정, 탈지공정, 탕세 및 탈지 공통의 공정 중 하나에서 건욕하여 금속표면에 발생한 산화막을 제거함을 특징으로 한다.
In the present invention, the chelating agent is used to dry a bath in one of the boiling step, the degreasing step, the boiling step and the degreasing common step of the electrodeposition coating pretreatment step to remove the oxide film formed on the metal surface.

본 발명은 킬레이트제의 산화막 제거제를 사용하여 금속 표면에 형성되어 있는 열영향부 산화막을 효과적으로 제거하여서 도장 품질의 내식성을 향상시켰으며, 기존 공정 중 탕세 또는 탈지(세정) 공정에 킬레이트제의 산화막 제거제를 사용함에 따라 별도 공정 증설없이 기존 설비를 이용할 수 있는 이점이 있는 것이다. The present invention uses a chelating agent to remove an oxide film of a heat-affected part formed on a metal surface, thereby improving the corrosion resistance of the coating quality. In the conventional process, the oxide film remover of a chelating agent It is advantageous to use existing facilities without additional process expansion.

또 본 발명의 산화 제거제는 강산성이 아니므로 설비 또는 이송장치의 손상 등이 없으며 특이한 냄새, 가스(Gas) 발생 등이 없어 작업환경에 악영향을 끼치지 아니하며 비교적 저온(20~55℃)에서 단시간(1~10분)에 산화막 제거가 가능한 것이다. 더욱이 저온에서나 중성에서 작업시는 방청아연도금 강판이나 알루미늄 등 복합소재에 부식을 가져오지 아니하면서도 산화막을 제거할 수 있는 장점이 있다.
In addition, since the oxidizing agent of the present invention is not strongly acidic, it does not cause damage to the equipment or the transfer device, and does not adversely affect the working environment due to the absence of odor and gas (gas) 1 to 10 minutes). Furthermore, when working at low temperature or neutral, there is an advantage that the oxide film can be removed without causing corrosion in a composite material such as a rust-preventive galvanized steel sheet or aluminum.

도 1은 금속표면에 형성된 산화막을 보여주는 사진도,
도 2 및 도 3은 금속표면상의 용접(CO2용접과 MAG용접 등) 열 영향부에 형성된 산화막을 EDX(Energy Dispersive X-ray spectroscopy)로 분석한 결과 그래프 및 결과표를 보여주는 도면,
도 4는 금속표면에 산화막이 있는 상태로 전착도장을 위한 공정을 수행하고 염수분무시험 720시간 후의 불만족 품질을 보여주는 사진도,
도 5는 본 발명에 따른 킬레이트제 산화막 제거제의 처리 전후 상태와 산화막 제거제를 처리한 전착도장제품을 염수분무시험후 상태를 보여주는 사진도.
1 is a photograph showing an oxide film formed on a metal surface,
FIG. 2 and FIG. 3 are graphs and a result table showing the result of analysis of an oxide film formed on a heat affected zone by welding (CO 2 welding and MAG welding) on a metal surface by EDX (Energy Dispersive X-ray spectroscopy)
FIG. 4 is a photograph showing the process of electrodeposition coating in the state that an oxide film is present on the metal surface and showing the unsatisfactory quality after 720 hours of the salt spray test,
FIG. 5 is a photograph showing the state before and after the treatment with the chelating agent oxide film remover according to the present invention and the state after the electrolytic coat agent treated with the oxide film remover after the salt spray test. FIG.

이하 본 발명의 바람직한 실시 예들을 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

전착도장을 위한 공정의 일 예를 보다 구체적으로 살펴보면 하기 표 1과 같다.An example of a process for electrodeposition coating is described in detail in Table 1 below.

공정
구분
fair
division
탕세Tansei 예비
탈지
Spare
Degreasing
본탈지
세정
This skim
washing
수세
1,2
Suesse
1,2
표면
조정
surface
adjustment
인산염피막Phosphate coating 수세
3,4
Suesse
3,4
순수세Pure three 전착
도장
Electroplating
stamp
소부Sob
처리시간(분)Processing time (min) 1.51.5 0.50.5 22 0.50.5 0.50.5 22 0.50.5 0.50.5 22 1010 온도(℃)Temperature (℃) 45±545 ± 5 45±545 ± 5 45±545 ± 5 상온Room temperature 상온Room temperature 45±545 ± 5 상온Room temperature 상온Room temperature 30±530 ± 5 180180 사용
약제
use
drugs
water 탈지제Degreasing agent 탈지제Degreasing agent water 표면
조정제
surface
Adjusting agent
피막제Encapsulation water water 도료varnish


목적


purpose
소재온도
상승 및 이물질 털기
Material temperature
Rising and dirt

오일류의 세정

Cleaning oil

오일류의 세정

Cleaning oil
표면의 약품
제거
(세척)
Surface medicine
remove
(wash)

표면의 활성화

Surface activation

피막형성

Film formation
표면의 약품
제거
(세척)
Surface medicine
remove
(wash)
표면의 약품
완전
제거
(세척)
Surface medicine
very
remove
(wash)

도장

stamp

페인트의 고착화

Paint fixation

표 1에서 언급한 바와 같은 전착도장을 위한 공정과 이 공정에 적용되는 약품으로는 금속 소재 표면의 산화막을 제거 할 수 없으며, 산화막이 있는 상태로 위 공정의 수순을 밟아 전착도장을 시행한 결과, 도 4의 사진도에서 볼 수 있는 것 같이 염수 분무시험에서 불만족의 결과를 초래했다. 즉 전착도장물에 녹이 발생하였다.The electrodeposition coating as described in Table 1 and the chemicals applied to this process can not remove the oxide film on the surface of the metal material. As a result of performing the electrodeposition coating by following the procedure of the above process with the oxide film, As can be seen from the photograph of FIG. 4, the salt spray test results in dissatisfaction. That is, rust occurred in the electrodeposited deposit.

그렇다고 사전에 산처리나 쇼트블라스트법(shot blasting) 등의 방법으로 산화막을 제거하는 것은 위 언급한 공정의 특성상 불가능하다. 본 명세서의 [발명의 배경이 되는 기술]란에서 이미 언급하였듯이, 산처리는 산 가스(gas)의 비산 및 장치와 이송장비의 내구성, 작업환경의 열악 등이 문제되어 위 공정 어디에도 추가 하거나 삽입할 수 없고, 쇼트블라스트법도 대량 연속작업이 불가능하여 적용이 안된다. However, it is impossible to remove the oxide film by a method such as acid treatment or shot blasting in advance due to the nature of the above-mentioned process. As already mentioned in the Background of the Invention section of the present specification, the acid treatment involves the scattering of the acid gas, the durability of the apparatus and the transportation equipment, and the poor working environment, And the shot blast method can not be applied because it can not be continuously operated in large quantities.

그러므로 어떤 약품을 사용하여 위 공정 중 어느 곳에 적용하면서도 금속표면에 생긴 산화막을 제거하여야만 하는바, 본원 발명자는 산화막 중의 금속이온을 킬레이트화 하여 용액 속에 용해시켜 제거시킴으로써 본 발명의 목적을 달성코자 한다. Therefore, it is necessary to remove the oxide film formed on the metal surface while applying any chemical to any of the above processes. The present inventor has accomplished the object of the present invention by chelating metal ions in the oxide film and dissolving them in solution.

먼저 본원 발명자는 금속표면에 생긴 산화막의 상태를 분석하였다. First, the present inventors analyzed the state of an oxide film formed on a metal surface.

금속 강판에 용접을 행하거나 기타 외부적 환경요인으로 인해서 열영향부의 금속표면에 도 1과 같은 산화막(스케일)이 발생한 것을 본원 발명자가 EDX(Energy Dispersive X-ray spectroscopy)로 분석한 결과의 일 예는 도 2 및 도 3과 같다. One example of the result of analyzing by EDX (Energy Dispersive X-ray spectroscopy) that the oxide film (scale) as shown in Fig. 1 was generated on the metal surface of the heat affected portion due to welding to the metal plate or other external environmental factors 2 and 3, respectively.

도 2는 철강소재에 용접한 경우 열영향부의 산화막 상태 및 분석결과이고, 도 3은 방청아연 도금강판의 경우 산화막 상태 및 분석 결과이다.FIG. 2 shows the state of the oxide film of the heat affected zone when the steel is welded to the steel material, and FIG. 3 shows the state of the oxide film and the analysis result in the case of the zinc oxide coated steel sheet.

도 2 및 도 3의 분석표에서 알 수 있듯이, 산화막 중에는 철(Fe), 아연(Zn)과 망간(Mn)을 함유하고 있음을 알 수 있다. As can be seen from the analysis table of FIG. 2 and FIG. 3, it can be seen that the oxide film contains iron (Fe), zinc (Zn) and manganese (Mn).

이에 본원 발명자는 산화막에 함유되어 있는 화합물을 금속 킬레이트화(가용화)시키면 자연히 산화되어 있는 인(P) 등의 불순물이 용해되어질 것으로 판단되기에, 킬레이트제를 사용한 실험을 반복해 본 결과 우수한 효과를 얻을 수 있었다.Therefore, the inventor of the present invention believed that when metal chelating (solubilizing) the compound contained in the oxide film, impurities such as phosphorus (P), which is naturally oxidized, are dissolved, .

실시예로 사용되는 킬레이트제를 E.D.T.A.(EthylendiaminetetraAcetate)로 일 예를 들 경우, 그 메카니즘은 하기와 같을 것으로 추정한다.When the chelating agent used as an example is E.D.T.A. (EthylendiaminetetraAcetate), the mechanism is presumed to be as follows.

Figure 112012009932482-pat00001
Figure 112012009932482-pat00001

여기서 Mn+ ; 열 용접부위 산화막 중의 금속이온 즉 Fe, Zn, Mn 등임.
Where M n + ; Metal ions in the oxide film of heat welding site, that is, Fe, Zn, Mn and so on.

그런데, E.D.T.A(Ethylendiaminetetra Acetic Acid), D.T.P.A(Diethylene TriaminepentaAcetic Acid), N.T.A(Nitrilotriacetic Acid) 등의 킬레이트제들은 대부분 물에 대한 용해도가 낮다는(통상 2% 미만) 문제가 있다. However, chelating agents such as E. D.T.A (Ethylenediaminetetra Acetic Acid), D.T.P.A (Diethylene TriaminepentaAcetic Acid), and N.T.A (Nitrilotriacetic Acid) have a problem that their solubility in water is generally low (usually less than 2%).

본원 발명자가 실험하여 얻은 결과에 따르면, 물에 대한 용해도를 높인 킬레이트제 즉 물에 용해되어서 2~20w/v%의 킬레이트 금속염이 되면, 산화막에 함유되어있는 인(P) 등의 불순물을 용해하므로 금속표면의 산화막을 제거할 수 있었다. According to the results of experiments conducted by the inventors of the present invention, when a chelating agent having a high solubility in water, that is, a chelating agent dissolving in water and 2 to 20 w / v% of the chelate metal salt, dissolves impurities such as phosphorus (P) contained in the oxide film The oxide film on the metal surface could be removed.

물에 대한 용해도를 높이기 위하여 알카리염(Na 또는 K)화 하는 보편적인 방법을 모색할 수 있지만, 이는 알카리염 화된 킬레이트제가 된다. 상기 알카리염 화된 킬레이트제는 2~20w/v% 용액이 수소이온농도 지수 즉 pH가 8~11이 되는데, 이러한 pH는 본원 발명자가 확인해 본 바 산화막을 제거할 수가 없었다.
In order to increase the solubility in water, it is possible to find a universal method of converting to an alkali salt (Na or K), but this is an alkaline chloride chelating agent. The alkaline chlorinated chelating agent has a hydrogen ion concentration index of 2 to 20 w / v%, that is, a pH of 8 to 11, which can not be removed by the present inventor.

본원 발명자는 산성 또는 중성(pH 2~7)에서 킬레이트제의 농도(물에 용해되어 있는 킬레이트제의 량)가 2~20w/v% 될 수 있도록, 약산을 사용하여 킬레이트제를 용해시킨 결과 본 발명의 목적에 부합하는 산화막 제거제로서 만족한 결과를 얻을 수 있었다. The present inventors have found that when a chelating agent is dissolved using a weak acid such that the concentration of chelating agent (amount of chelating agent dissolved in water) is 2 to 20 w / v% in acidic or neutral (pH 2 to 7) Satisfactory results were obtained as an oxide film remover in accordance with the object of the present invention.

이때 사용한 약산(弱酸)으로는 인산, 아세트산(Acetic Acid), 젖산(Lactic Acid), 구연산(Citric Acid), 타타르산(Tartaric Acid) 등이 포함된다. The weak acids used here include phosphoric acid, acetic acid, lactic acid, citric acid, and tartaric acid.

또 물에 잘 용해되는 킬레이트제 즉, HEDTA(HydroxyeterEthylenDiamineTri AceticAcid)와 HEDPA(HydroxyEthylidenDiPhosphoricAcid) 또는 아인산(Phosphorous acid)은 알카리 또는 알카리염류 즉 NaOH, KOH, 2,3인산소다, 2,3인산카리 또는 다이에탄올아민(Diethanol amine)이나 트리에탄올아민(Triethanol amine)으로 pH를 조절하여 사용하였다. 또 본 발명에 따라 물에 잘 용해되는 킬레이트제는 모두 KMnO4 열 산화환원 적정법으로 그 농도의 측정이 가능한 것이다. In addition, chelating agents that are well soluble in water, such as HEDTA (HydroxyetherEthylenDiamineTriAceticAcid) and HEDPA (HydroxyEthylidenDiPhosphoricAcid) or phosphorous acid, can be mixed with alkali or alkaline salts such as NaOH, KOH, Sodium 2,3 Phosphate, The pH was adjusted with diethanol amine or triethanol amine. Also, according to the present invention, the chelating agent well soluble in water can be measured by its KMnO 4 thermal oxidation-reduction titration method.

이렇게 하여 얻어진 본 발명의 킬레이트제 산화막 제거제의 사용은 전처리공정인 탕세공정, 탈지공정, 탕세 및 탈지 공통의 공정 중 하나에 포함될 수 있으며, 사용시 건욕을 하여서 금속표면에 발생한 산화막을 제거한다. The use of the chelate oxide remover of the present invention thus obtained can be included in one of the pretreatment process, the degassing process, the degassing process, the common bathing process, and the degassing process.

본 발명 킬레이트제 산화막 제거제의 바람직한 사용 공정은 탕세공정이나 탈지세정공정이며, 탕세공정시에는 탕세 탱크에 산화막 제거제로서 pH 2~7이며 2~20w/v% 농도의 킬레이트제를 건욕 사용하거나 탈지세정공정에 건욕 사용하는 것이다. The preferred use process of the chelate oxide film remover is a bathing process or a degreasing cleaning process. In the case of tanning, a chelating agent having a pH of 2 to 7 and a concentration of 2 to 20 w / v% as an oxide film removing agent is used as a bathing tank, The process is to use humidification.

본 발명의 산화막 제거제를 처리함에 따라, 도 5의 (a)에서와 같이 전처리전 산화막이 발생되어 있었던 금속 표면은 도 5의 (b)에서와 같이 깨끗한 소재가 되 었고, 염수분무시험 720시간 후에는 도 5의 (c)의 사진도에서 볼 수 있는 바와 같이 부식이 없는 만족한 결과를 얻었다.
As a result of the treatment with the oxide film remover of the present invention, the metal surface on which the pre-treatment oxide film was generated as shown in FIG. 5 (a) was a clean material as shown in FIG. 5 (b) As shown in the photograph of FIG. 5 (c), the results were satisfactory without corrosion.

본 발명에 따른 킬레이트제의 산화막 제거제에 대한 구체적인 실시 예는 하기 표 2의 테이블과 같다.
Specific examples of the oxide film remover of the chelating agent according to the present invention are shown in the table of Table 2 below.

실시예
약품명
Example
Chemical name
1One 22 33 44 55 66
E.D.T.A (g)E.D.T.A (g) 2020 D.T.P.A (g)D.T.P.A (g) 5050 N.T.A (g)N.T.A (g) 1010 HEDTA (g)HEDTA (g) 5050 5050 5050 100100 HEDPA (g)HEDPA (g) 5050 5050 5050 아인산 (g)The phosphorous acid (g) 150150 산(acid) (g)Acid (g) 3030 -- -- 3030 -- -- 알카리제 (g)Alkali agent (g) 10
(pH조절)
10
(pH adjustment)
5
(pH조절)
5
(pH adjustment)
20
(pH조절)
20
(pH adjustment)
15
(pH조절)
15
(pH adjustment)
50
(pH조절)
50
(pH adjustment)
50
(pH조절)
50
(pH adjustment)
water 잔여량채워 1ℓFill the remaining amount 1ℓ 잔여량채워 1ℓFill the remaining amount 1ℓ 잔여량채워 1ℓFill the remaining amount 1ℓ 잔여량채워 1ℓFill the remaining amount 1ℓ 잔여량채워 1ℓFill the remaining amount 1ℓ 잔여량채워 1ℓFill the remaining amount 1ℓ 농도 (w/v %)Concentration (w / v%) 33 55 1010 1010 1515 2020 관리 포인트management point 3030 2525 2020 1515 1010 55 pHpH 2±0.52 ± 0.5 3±0.53 ± 0.5 4±0.54 ± 0.5 5±0.55 ± 0.5 6±0.56 ± 0.5 7±0.57 ± 0.5 처리시간Processing time 1분30초1 minute 30 seconds 2분2 minutes 2분2 minutes 2분2 minutes 2분2 minutes 10분10 minutes 처리온도Treatment temperature 2020 2525 3535 4545 5555 5555

여기서, here,

① E.D.T.A ; Ethylendiaminetetra Acetic Acid① E.D.T.A; Ethylendiaminetetra Acetic Acid

② D.T.P.A ; DiethyleneTriaminepentaAcetic Acid ② D.T.P.A; DiethyleneTriaminepentaAcetic Acid

③ N.T.A ; NitrilotriaceticAcid③ N.T.A; NitrilotriaceticAcid

④ HEDTA ; Hydroxyeter ethylendiamine TriAceticAcid④ HEDTA; Hydroxyether ethylendiamine TriAceticAcid

⑤ HEDPA ; HydroxyethylideneDiphosphoric Acid⑤ HEDPA; HydroxyethylideneDiphosphoric Acid

⑥ 아인산(Phosphouous Acid); H₃PO₃⑥ Phosphouous Acid; H₃PO₃

⑦ 산(Acid) ; 인산(Phosphoric Acid), 아세트산(Acetic Acid), 젖산(Lactic Acid), 구연산(Citric Acid), 타타르산(Tartaric Acid)을 사용하였다.⑦ Acid; Phosphoric Acid, Acetic Acid, Lactic Acid, Citric Acid and Tartaric Acid were used.

⑧ 알카리제는 과잉의 산을 중화하며 pH를 조절하기 위하여 사용된다. NaOH, KOH, Na 알카리염(예를 들어, 2인산소다, 3인산소다), K알카리염(2인산카리, 3인산카리), 다이에탄올아민(Diethanol amine) 또는 트리에탄올아민(Triethanol amine)을 사용하였다.⑧ Alkali agent is used to neutralize excess acid and adjust pH. Use NaOH, KOH, Na alkaline salt (eg sodium sulphate, sodium triphosphate), K alkaline salt (potassium diphosphate, potassium triphosphate), diethanol amine or triethanol amine Respectively.

⑨ 물 ; 일반공업 용수를 사용하고 잔여량을 투입하여 1ℓ로 한다.
⑨ water; Use general industrial water and add the remaining amount to 1 liter.

⑩ 농도(w/v %) ; 킬레이트제 함량을 표시하고, 그 측정 방법은 다음과 같다.⑩ Concentration (w / v%); The content of chelating agent is indicated and the measurement method is as follows.

먼저 시료액 10g을 정확히 취하여 100ml 용적 후라스크에 취하고 증류수로 표선까지 채운 다음 잘 혼합하고 2개의 100ml 삼각 후라스크에 각 10ml씩 취하여 넣은 다음, 그 중 하나는 열 0.1N-KMnO₄적정(A)에 쓰고 또 하나는 상온0.1N-KMnO₄적정(B)에 사용한다. 킬레이트제는 상온에서는 0.1N-KMnO₄에 의하여 산화되지 아니하여 그 소비량이 없으며 열에 의해서만 산화되기 때문이다.First, take 10 g of the sample solution, take it into a 100 ml volumetric flask, fill it with distilled water to the marking, mix well, add 10 ml each into two 100 ml triangular fritts, and add one of them to the titration column (A) of 0.1N-KMnO₄ The other one is used for titration at room temperature 0.1N-KMnO₄ (B). The chelating agent is not oxidized by 0.1N-KMnO4 at room temperature, so it is not consumed and only oxidized by heat.

* 열 0.1N-KMnO₄적정방법(A) : 측정을 위하여 준비된 100ml 삼각 후라스크에 증류수 30ml를 넣은 다음 끓인 후 1 : 1 H₂SO₄6ml를 넣고 0.1N-KMnO₄시약으로 적정하고 핑크색이 30초이상 지속되는 점을 종점으로 하고 그 소비 ml 수를 'A'라 한다.* Titration 0.1N-KMnO4 titration method (A): Add 30 ml of distilled water to a 100 ml triangular fryer prepared for measurement, boil, add 6 ml of 1: 1 H2SO4, titrate with 0.1N-KMnO4 reagent, And the number of consumed ml is called 'A'.

또 하나의 측정을 위하여 준비된 100ml 삼각 후라스크에 증류수 30ml를 넣고 1 : 1 H₂SO₄2ml를 넣은 다음 상온에서 0.1N-KMnO₄시약으로 적정하고 30초 이상 핑크색이 지속되는 점을 종점으로 하고 그 소비ml 수를 'B'라 한다.For another measurement, 30 ml of distilled water was added to a 100 ml triangular fountain, added with 2 ml of 1: 1 H2SO4, titrated with 0.1N-KMnO4 reagent at room temperature, and ending pink for 30 seconds or longer. Quot; B ".

그러므로, therefore,

농도(w/v %) = (A - B) × 0.6Concentration (w / v%) = (A - B) x 0.6

⑪ 관리 포인트(point) ; 건욕된 시료액 5ml에 대한 0.1N-NaOH의 소비량으로 액의 유지관리에 필요한 중요 관리 기법이며, 그 구체적 측정방법은 다음과 같다.⑪ management point (point); The amount of 0.1N-NaOH consumed per 5 ml of the sample solution is an important management technique for the maintenance of the liquid. The specific measurement method is as follows.

즉, 시료액 5ml를 매스홀 피펫(massholl pippett)으로 정확히 채취하고 250ml 삼각플라스크에 옮긴 후 증류수 50ml를 가하고 지시액 페놀프탈레인(phenolphaleine)을 3~5방울 적하한 다음 0.1N-NaOH로 적정하고 무색에서 핑크색을 나타내는 점을 종점으로 하여 그 소비 ml수를 관리 포인트(point)라 한다.That is, 5 ml of the sample solution was accurately sampled with a massholl pipette, transferred to a 250 ml Erlenmeyer flask, and 50 ml of distilled water was added thereto. 3 ~ 5 drops of phenolphaleine was added dropwise to the solution and then titrated with 0.1 N NaOH. The point representing the pink color is the end point, and the number of the consumed ml is called the point of management.

이러한 관리 포인트를 정함에 있어 표 2의 참조하면, 본 발명의 산화막 제거제로서 킬레이트제 시료 5ml에 대한 0.1N-NaOH 소비량이 5~30ml가 되도록 조성하는 것임을 알 수 있다.
Referring to Table 2, it can be seen that the amount of 0.1 N NaOH consumed per 5 ml of the chelating agent sample is 5 to 30 ml as an oxide film remover of the present invention.

상술한 본 발명의 설명에서는 구체적인 실시 예에 관해 설명하였으나, 여러 가지 변형이 본 발명의 범위에서 벗어나지 않고 실시할 수 있다. 따라서 본 발명의 범위는 설명된 실시 예에 의하여 정할 것이 아니고 특허청구범위 및 그 특허청구범위와 균등한 것에 의해 정해 져야 한다. While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. Therefore, the scope of the present invention should not be limited by the described embodiments, but should be determined by the scope of claims and equivalents thereof.

Claims (4)

전착 도장 공정에서 금속 표면에 발생한 산화막 제거를 위하여 용매에 희석시 pH 2~7이고, 0.1N-KMnO4 열산화환원 적정법으로 측정이 가능한 킬레이트제를 2~20w/v% 사용하여서 산화막 제거제를 얻되, 상기 산화막 제거제 시료 5ml에 대한 0.1N-NaOH 소비량이 5~30ml가 되도록 조성함을 특징으로 하는 전착도장 품질 향상을 위한 산화막 제거제.
In order to remove the oxide film formed on the metal surface in the electrodeposition coating process, an oxide film remover is obtained by diluting the solvent with 2 to 20 w / v% of a chelating agent having a pH of 2 to 7 and a 0.1N-KMnO 4 thermal oxidation-reduction titration method , And the amount of 0.1 N NaOH is 5 to 30 ml per 5 ml of the oxide film removing agent sample.
제1항에 있어서, 상기 킬레이트제 물질은 E.D.T.A.(Ethylene diamine tetra Acetic Acid), D.T.P.A.(Diethylen Triamine penta Acetic Acid), N.T.A.(nitrilotri Acetic Acid), HEDTA(Hydroxyeter ethylenediamine TriAcetic Acid), HEDPA(Hydroxyethylidene Diphosphoric Acid), 아인산(phosphorous Acid)에서 선택됨을 특징으로 하는 전착도장 품질 향상을 위한 산화막 제거제.
The chelating agent of claim 1, wherein the chelating agent is selected from the group consisting of ethylene diamine tetraacetic acid (EDTA), diethylenetriamine penta acetic acid (DTPA), nitrilotriacetic acid (NTA), hydroxyethylenediamine triacetic acid (HEDTA), hydroxyethylidene diphosphoric acid (HEDPA) , Phosphorous acid (phosphorous acid).
제1항 또는 제2항에 있어서, 킬레이트제가 물에 대한 용해도를 가지며 pH 2~7가 될 수 있도록 인산(Phosphoric Acid), 아세트산(Acetic Acid), 젖산(Lactic Acid), 구연산(Citric Acid), 타타르산(Tartaric Acid)이 선택적으로 사용됨을 특징으로 하는 전착도장 품질 향상을 위한 산화막 제거제.
The method of claim 1 or 2, wherein the chelating agent has a solubility in water and is selected from the group consisting of phosphoric acid, acetic acid, lactic acid, citric acid, Wherein Tartaric Acid is selectively used as an antioxidant.
제1항 또는 제2항에 기재된 킬레이트제의 산화막 제거제를 이용하여 전착도장 전처리공정의 탕세공정, 탈지공정, 탕세 및 탈지 공통의 공정 중 하나에서 건욕하여 금속표면에 발생한 산화막을 제거함을 특징으로 하는 전착도장 품질 향상을 위한 산화막 제거방법.Characterized by removing the oxide film formed on the surface of the metal by using a chelating agent oxide film remover as set forth in any one of claims 1 to 3 for bathing in one of the bathing step, the degreasing step, the boiling step and the degreasing common step of the electrodeposition coating pretreatment step An oxide film removal method for improving electrodeposition coating quality.
KR1020120012345A 2012-02-07 2012-02-07 Oxide film remover for improvement in the quality of electro painting and removing method of oxide film KR101275019B1 (en)

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CN104047040A (en) * 2014-06-23 2014-09-17 梧州恒声电子科技有限公司 Electroplating activating agent and preparation method thereof
KR101636023B1 (en) * 2015-12-22 2016-07-04 삼양화학산업 주식회사 flushing water for prevent rust using metal pre-treatment
KR101697675B1 (en) 2016-10-19 2017-01-18 김원묵 Manufacturing methods of LED PCB using electrical steel and the LED PCB thereof
KR101761736B1 (en) * 2016-02-29 2017-07-26 주식회사 성진케미칼 Oxide film remover using low concentration chelate compound and utilzation method thereof

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CN104047040A (en) * 2014-06-23 2014-09-17 梧州恒声电子科技有限公司 Electroplating activating agent and preparation method thereof
KR101636023B1 (en) * 2015-12-22 2016-07-04 삼양화학산업 주식회사 flushing water for prevent rust using metal pre-treatment
KR101761736B1 (en) * 2016-02-29 2017-07-26 주식회사 성진케미칼 Oxide film remover using low concentration chelate compound and utilzation method thereof
KR101697675B1 (en) 2016-10-19 2017-01-18 김원묵 Manufacturing methods of LED PCB using electrical steel and the LED PCB thereof

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