KR101255697B1 - Switching device - Google Patents

Abstract

The control of encryption of data for storage for a cartridge memory having at least a portion lockable to read-only and a removable data storage cartridge with a recording medium is a readout of the cartridge memory of the removable data storage cartridge for the " encryption-only " flag. Use the step of checking the dedicated part. If the "encryption-only" flag is present, the recording of the removable data storage cartridge to the recording medium is limited to the data in encrypted format, and in any case, the recording of the removable data storage cartridge to the recording medium is encrypted It is allowed for data in any of the format and the unencrypted format.

Description

Switching device {SWITCHING DEVICE}

The present disclosure relates generally to switching devices.

In high voltage gas-insulated switches of about 420 kV, switching devices such as disconnectors may be equipped with resistors that define very fast transients (VFTs) that may be generated during disconnection and opening of the disconnector. In known designs, such resistors are designed as bulk ohmic resistors with high energy absorption capability and located on a fixed contact side. A resistance value of up to 1 kΩ is applied at a few 100 kV. Using such a resistor inside a fixed contact requires nearly double the stroke of the moving part, since the voltage drop along this resistance is approximately as high as the rated voltage.

In view of the above, a switching device is provided, which switching device comprises a housing filled with insulating gas, a first contact element comprising a first main contact and a first arcing contact, and a second main contact; And a movable second contact element comprising a second arc contact, wherein the second contact element is from a first position where the first and second arc contacts as well as the first and second main contacts are in direct contact. Moveable to a second position in which the first and second main contacts and the first and second arc contacts are not in direct contact, the second contact element electrically connecting the second main contact with the second arc contact. It further comprises an impedance element to make.

According to one embodiment, an impedance element is added to the moving contact of the switching device. By doing this, the impedance element will be activated during the blocking and opening of the switching device to reduce the VTF peak and rate-of-rise. During opening, the impedance element will be activated to improve the bus transfer switching behavior of the switching device. The impedance may comprise an inductive element and / or may comprise a resistive element, both of which are inside the moving contact of the switching device.

According to a preferred embodiment, the resistance of the resistive element is in the range of 0.01 to 10.0 kPa. Preferably, the inductiveity of the inductive element is in the range of 0.1 to 50.0 nH. Due to the low values of resistance and inductance, a very small insulation gap between the arc contact and the main contact on the moving contact element, thus no additional stroke for the moving contact element will be required.

According to a preferred embodiment, the resistive element exhibits a positive temperature coefficient. Preferably, the resistive element exhibits a skin effect. Furthermore, it is preferred that the resistive element comprise a ceramic material. Proper selection of the resistive material allows the skin effect to be used in the resistor, so that the resistance value is higher than during opening at the rated frequency for VFT damping at high frequencies.

According to a preferred embodiment, the inductive element and the resistive element form a single impedance element in one piece. Preferably, the voltage drop across the impedance element is lower than 1/10 of the rated voltage of the switching device.

Further exemplary embodiments are in accordance with the dependent claims, the description and the accompanying drawings.

The entire possible disclosure, including the best mode, is more specifically described to those skilled in the art in the rest of the specification, including citations to the accompanying drawings.

The present invention has the effect that the impedance element is activated during the blocking and opening of the switching device to reduce the VTF peak and rate-of-rise.

1 is a cross-sectional view of a switching device according to the invention, which may be installed in an encapsulated switchgear assembly.
FIG. 2 shows in detail the contact area shown in FIG. 1 in the blocked position of the switching device; FIG.
3 shows in detail the contact area shown in FIG. 1 in the open position of the switching device;
4 a schematic circuit diagram of the switching device according to FIG. 1;

Various exemplary embodiments will now be specifically cited, one or more examples of which are shown in the drawings. Each example is provided by way of explanation, and is not meant to be limiting. For example, features illustrated or described as part of one embodiment may be used on or in conjunction with other embodiments to yield further embodiments. It is intended that the present disclosure cover such modifications and variations.

Many embodiments will be described below. In this case, identical structural features are identified by the same reference numerals in the drawings. The structure shown in the figures is not drawn to scale, but is provided only for a better understanding of the embodiments.

For the purposes of the present application, high voltage switching devices include high voltage and high power switches, switches with or without arc quenching, disconnectors, grounding devices and additional switching devices from the high voltage art.

1 shows a switching device according to the invention in an open position. The switching device shown in FIG. 1 is in the form of a module of a gas-insulated, metal-encapsulated switchgear assembly and has a metal housing 1 filled with insulating gas and having two main openings 2 and 3. Each of the openings 2 and 3 is sealed in a gas-tight manner by a barrier insulator, which barrier insulator is electrically insulated from the housing 1, in each case supporting the current conductors 5, 6, respectively. These current conductors 5, 6 may have a high voltage applied thereto. Instead of barrier insulators, post insulators with gas passage openings may also be used where appropriate.

The current conductor 6 is connected to a first contact element 10 comprising a first main contact 12 and a first arc contact 14 (see FIG. 2). The current conductor 5 is connected to the second contact element 20, which comprises a second main contact 22 and a second arc contact 24 and which has a horizontal axis in FIG. 1. It can be moved along. Conductor tube 21 or hollow carrier 21 is used to conduct current to the current conductor 5, which conductor tube 21 or hollow carrier 21 forms part of the current element 20, Through two sliding contacts (not shown), it continues to form a current transfer to the current conductor 5, regardless of its position.

Moreover, the switching device is provided with the first and second main contacts 12 from a first position where the first and second main contacts 12, 22 and the first and second arc contacts 14, 24 are in direct contact. , 22) as well as a drive element 7 for moving the second contact element 20 to a second position in which neither of the first and second arc contacts 14, 24 are in direct contact.

As can be seen in more detail in FIG. 2, the switching device comprises a first contact element 10 fixed to the current conductor 6. The first contact element 10 comprises a first main contact 12 in the form of a contact spring. Moreover, the first contact element 10 comprises a first arc contact 14 supported by a conductive spring element 16. A shield 18 is provided around the first contact element 10 to influence the field distribution in the vicinity of the first contact element 10.

The movable second contact element 20 comprises a second main contact 22 formed by a portion of the conductor tube 21 and a second arc contact 24 formed in the front portion of the second contact element 20. do. Additional shields (not shown) may also be provided around the second contact element 20. Moreover, the second contact element 20 comprises an impedance element 25 which electrically connects the second main contact 22 with the second arc contact 24.

Thus, the impedance element 25 is located inside the moving contact between the main current contact 22 and the arc contact 24. Preferably, the impedance element 25 comprises an inductive element and a resistive element, through which the inductive element and the resistive element form a single impedance element 25 in one piece. Moreover, it is desirable to use very small (cold) resistance of approximately 0.1 kΩ and an inductance value of approximately 20 nH. The desired inductance value can be selected, for example, by selecting the appropriate wire geometry. Preferably, the resistive element exhibits a positive temperature coefficient and / or skin effect. Furthermore, it is desirable for the voltage drop along the impedance element to remain approximately 1/10 below the rated voltage.

Combining the placement of the impedance element 25 and the small impedance value in the moving contact element 20 allows a small gap 26 between the rated current contact 22 and the arc contact 24. Therefore, the energy lost by impedance 25 during opening is low, which allows the use of very small resistance volumes.

2 shows the switching device in a first position in which the first and second main contacts 12, 22 as well as the first and second arc contacts 14, 24 are in direct contact. 3 shows the switching device in a second position in which neither the first and second main contacts 12, 22, but also the first and second arc contacts 14, 24 are in direct contact.

4 shows a schematic circuit diagram of the switching device according to FIG. 1. In this way, the first and second main contacts 12, 22 form a main switch 31 together, and the first and second arc contacts 14, 24 form an arc switching 32. Impedance element 25 is composed of PTC resistor 35 and inductance 36. The arc switch 32, the resistor 35 and the inductance 36 are connected in series, while the main switch 31 is connected in parallel with the arc switch.

Due to the design and placement of the impedance element 25, the impedance element 25 will act differently on the blocking and opening of the switching device.

During interruption, the first and second arc contacts will be interrupted prior to the first and second main contacts. Pre-striking will occur between the arc contacts, and superfast transients (VFT) will mainly be damped by the resistive element. The resistance value will preferably increase at high frequencies due to the skin effect. The resulting heat is lost in the resistive element.

The inductive element is also activated to define the rate of rise of the VFT. By applying small resistance and inductance values, 10% to 20% of the VFT peak voltage is damped, but this damping is sufficient to keep the VFT peak below the breakdowns strength of the GIS device.

During the opening of the switching device, the first and second arc contacts will open after the first and second main contacts. Due to the low frequency (eg 50 or 60 Hz) involved during bus transfer after the opening of the main contact, only the resistive element is activated. During bus-delivery switching, the bus transfer current will produce a voltage drop on a small resistor that is a few 100V. This voltage is already higher than the arc voltage. Therefore, bus propagation time and corresponding contact wear will be greatly reduced. It is proposed to use a resistive material having a positive temperature coefficient (PTC). Therefore, energy lost during opening will increase the resistance value and further improve bus transfer capability.

The invention has been described on the basis of embodiments which are shown in the accompanying drawings and from which further advantages and modifications appear. However, the present disclosure is not limited to the embodiments described in the specific terms, and may be modified and changed in a suitable manner. It is within the scope to combine the individual features and combinations of features of one embodiment with the features and combinations of features of another embodiment in a suitable manner to arrive at a further embodiment.

It will be apparent to those skilled in the art based on the teachings herein that changes and modifications may be made without departing from the disclosure and broader aspects. In other words, all the foregoing examples are intended to be illustrative and not restrictive.

1: metal housing 2, 3: main opening
5, 6: current conductor 7: driving element
10: first contact element 12: first primary contact
14 first arc contact 16 conductive spring element
18 shield 20 a second contact element
21: contact tube; Hollow carrier 22: second main contact
24: second arc contact 25: impedance element
26: interval 31: main switch
32: arc switch 35: resistance
36: inductance

Claims (11)

As a switching device,
A housing 1 filled with insulating gas;
A first contact element (10) comprising a first main contact (12) and a first arcing contact (14);
A movable second contact element 20 comprising a second main contact 22 and a second arc contact 24, the movable second contact element 20 being the first and second main contact ( 12, 22 as well as the first and second main contacts 12, 22, as well as the first and second primary contacts 12, 22 from a first position where the first and second arc contacts 14, 24 are in direct contact. Moveable second contact element 20 movable to a second position where neither arc contact 14 or 24 is in direct contact.
Including,
The movable second contact element 20 further comprises an impedance element 25 that electrically connects the second main contact 22 to the second arc contact 24, the impedance element 25 being Switching device comprising a resistive element (35) and an inductive element (36). 2. The switching device according to claim 1, wherein the resistance of the resistive element is in the range of 0.01 to 10.0 kPa. 3. The switching device according to claim 1, wherein the inductance of the inductive element is in the range of 1.0 to 50.0 nH. 4. 2. Switching device according to claim 1, wherein the resistive element (35) exhibits a positive temperature coefficient. 2. Switching device according to claim 1, wherein the resistive element (35) exhibits a skin effect. 2. Switching device according to claim 1, wherein the resistive element (35) comprises a ceramic material. 2. Switching device according to claim 1, wherein the inductive element (36) and the resistive element (35) form a single impedance element (25) integrally. 2. The switching device according to claim 1, wherein the voltage drop across the impedance element is less than 1/10 of the rated voltage of the switching device. Switching device according to claim 1, wherein the first contact element (10) comprises a conductive spring element (16) connected to the first arc contact (14). 2. The first and second of claim 1, wherein the first and second primary contacts 12, 22 as well as the first and second arc contacts 14, 24 are located in direct contact with each other. Drive element 7 for moving the second contact element 20 to a second position in which neither the primary contacts 12, 22 nor the first and second arc contacts 14, 24 are in direct contact. The switching device further comprises. 2. Switching device according to claim 1, wherein the first main contact (12) comprises a contact spring.

Images