KR101229793B1 - Apparatus for processing substrate - Google Patents

Abstract

The substrate processing apparatus according to the present invention includes a chamber having an internal space, a shower head disposed in the chamber, and having a power applied to generate plasma to penetrate a shower head and a shower head to form a first plasma region inside or outside. And an antenna provided to surround the outer circumferential surface of the plasma generating tube and the plasma generating tube so as to form the second plasma region therein, and to which power for plasma generation is applied.
Therefore, according to embodiments of the present invention, by using a resonant plasma having high ion energy and plasma density, the substrate processing process speed may be improved as compared with the conventional art. On the other hand, while the resonant plasma moves to the substrate, the density thereof may be reduced. The reduction of the resonant plasma density is compensated by forming a capacitive plasma having ion energy and plasma density lower than that of the resonant plasma. In addition, by forming the resonance plasma and the capacitive plasma together, and controlling the ion energy incident or impinged on the substrate, it is possible to prevent the substrate or the thin film from being damaged.

Description

[0001] Apparatus for processing substrate [0002]

The present invention relates to a substrate processing apparatus in which a substrate processing step is easy.

In recent years, as semiconductor devices have been miniaturized, technologies for miniaturizing and integrating patterns have been researched and developed. In order to manufacture highly integrated and miniaturized semiconductor devices, a plasma apparatus for activating and plasmalizing a reaction gas is generally used. On the other hand, the plasma apparatus can be generally divided into a capacitive coupled plasma (CCP) type and an inductive coupled plasma (CCP) type according to a plasma-forming method.

The capacitive plasma apparatus includes, for example, a chamber, an upper electrode at least partially disposed within the chamber and grounded, a gas injector disposed below the upper electrode in the chamber to inject raw material gas, and disposed below the gas injector so as to face the substrate. And an electrostatic chuck for supporting, an upper power supply for applying power to the upper electrode, and a lower power supply for applying power to the lower electrode. When power is applied to the upper electrode and the lower electrode in the capacitive plasma device, an electric field and a plasma are formed between the lower electrode and the upper electrode. Plasma generated in the capacitive plasma device has an advantage of high ion energy due to an electric field, but a problem occurs in that a substrate or a thin film formed on the substrate is damaged by the high energy ions. And as the pattern becomes finer, the degree of damage by ions of high energy is great.

The inductive plasma apparatus is, for example, a chamber, a gas injector disposed in the chamber to inject a source gas, an electrostatic chuck disposed opposite to the gas injector in the chamber to support the substrate, and an antenna disposed outside the chamber to which source power is applied. An antenna source power supply for applying a source power to the antenna and a bias power supply for applying a high frequency bias power to the electrostatic chuck. In such an inductive plasma apparatus, when a bias power is applied to the electrostatic chuck and a source power is applied to the antenna, plasma is formed in the chamber. The cations in the generated plasma are incident or collided with the surface of the substrate, thereby forming a thin film on the substrate or etching the thin film formed on the substrate or the substrate. Plasma formed in the inductive plasma apparatus has an advantage of having a high density and forming a low ion energy distribution, thereby reducing damage to the substrate or the thin film. However, although the ion density of the plasma formed in the chamber is constant in the central region of the chamber, the uniformity of the ion density decreases toward the edge region. This difference in ion density is more pronounced as the substrate and the chamber are enlarged.

On the other hand, Korean Patent Laid-Open No. 1997-0003557 discloses a capacitively coupled plasma apparatus for generating a capacitive plasma, including an upper reactor electrode and a lower reactor electrode positioned below the upper reactor electrode. -0963519 'is an inductively coupled plasma generation including a gas injector for injecting a source gas into the chamber, an antenna to which source power is applied, and an electrostatic chuck to which a substrate is fixed and a bias power is applied. The device is presented.

One technical problem of the present invention is to provide a substrate processing apparatus that can easily perform a substrate processing step.

Another technical problem of the present invention is to provide a substrate processing apparatus capable of preventing damage to a substrate or a thin film deposited on the substrate.

Another technical problem of the present invention is to provide a substrate processing apparatus capable of uniformly diffusing a plasma.

The substrate processing apparatus according to the present invention includes a chamber having an inner space, a shower head disposed in the chamber, and a power supply for generating plasma, through which the first plasma region is formed, to pass through the shower head. And an antenna provided to surround the outer circumferential surface of the plasma generating tube and a plasma generating tube for forming a second plasma region therein, and to receive power for plasma generation.

Capacitive plasma (CCP PLASMA) is generated in the first plasma region, and resonant plasma is generated in the second plasma region.

The showerhead may include a first showerhead positioned at an upper side and a second showerhead spaced below and grounded below the first showerhead, and the first plasma region may be the first showerhead. And the area between the second showerhead.

The plasma generating tube penetrates the first and second shower heads in a vertical direction and extends from an upper side of the first shower head to a lower portion of the second shower head.

The plasma generating tube penetrates the first shower head in a vertical direction and extends from an upper side of the first shower head to a lower portion of the first shower head.

And a magnetic field generating unit installed in at least one of the inside and the outside of the chamber to generate a magnetic field.

The magnetic field generating unit disposed inside the chamber is located above the shower head.

A plurality of plasma generating tubes are provided to be spaced apart from each other, and a magnetic field generating unit is disposed between the plasma generating tubes.

An insulating member is disposed in the surrounding areas of the shower head, the plasma generating tube, and the magnetic field generating part of the chamber inner wall, the insulating member is disposed above the shower head, and the magnetic field generating part is disposed above the insulating member mounted on the shower head. do.

An electromagnet coil is used as the magnetic field generator.

The plasma generating tube is manufactured using an insulating material.

The chamber is disposed under the shower head in the chamber to support a substrate, and a bias power is applied.

And a first raw material supply line for supplying the raw material gas to the shower head, and a second raw material supply line for supplying the raw material gas into the plasma generation tube.

As described above, according to the embodiments of the present invention, by using a resonant plasma having high ion energy and plasma density, the substrate processing process speed can be improved as compared with the related art. On the other hand, while the resonant plasma moves to the substrate, the density thereof may be reduced. The reduction of the resonant plasma density is compensated by forming a capacitive plasma having ion energy and plasma density lower than that of the resonant plasma. In addition, by forming the resonance plasma and the capacitive plasma together, and controlling the ion energy incident or impinged on the substrate, it is possible to prevent the substrate or the thin film from being damaged.

The magnetic field generating unit is installed in at least one of the outside and the inside of the chamber to form a magnetic field, thereby moving the resonant plasma along the magnetic flux of the magnetic field. As a result, the resonant plasma is uniformly spread over the entire reaction region. Therefore, uniform process conditions can be maintained with respect to the whole board | substrate.

1 is a cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention.
2 is a cross-sectional view illustrating a substrate processing apparatus according to a second embodiment.
3 is a cross-sectional view illustrating a substrate processing apparatus according to a third embodiment.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention and to those skilled in the art. It is provided for complete information.

1 is a cross-sectional view showing a substrate processing apparatus according to a first embodiment of the present invention. 2 is a cross-sectional view showing a substrate processing apparatus according to a second embodiment. 3 is a cross-sectional view illustrating a substrate processing apparatus according to a third embodiment.

Referring to FIG. 1, a substrate processing apparatus according to an embodiment may include a chamber 100 having an internal space for processing a substrate S and a substrate disposed inside the chamber 100 to support and fix the substrate S thereon. The first and second shower heads 310 and 320 disposed in the support unit 200 and the chamber 100 in an upper side of the substrate support unit 200 to inject the raw gas, and are spaced apart in the vertical direction, and the vertical direction. It is installed to penetrate the first and second shower head (310, 320) disposed in the plasma generator, the plasma generating tube 510, the antenna 520 wound around the outer peripheral surface of the plasma generating tube 510 and It includes a plurality of magnetic field generating unit 600 installed in at least one of the interior and exterior of the chamber 100. In addition, one end is connected to the first shower head 310, the first raw material supply line 330 for supplying the raw material gas to the first shower head 310, one end is connected to the plasma generating tube 510, the plasma A second source supply line 530 for supplying source gas to the generator tube 510, a first power supply 340 for applying power to the first shower head 310, and an agent for applying power to the antenna 520. And a third power supply 230 for supplying bias power to the second power supply 540 and the substrate support unit 200. Here, the source gas supplied into the first shower head 310 and the plasma generating tube 510 uses heterogeneous or the same gas according to the type and etching type of the film formed on the substrate S. For example, in order to form an oxide (SiO ₂ ) film on the substrate S, the first showerhead is supplied with O ₂ or N ₂ 0 gas to form a plasma, and the plasma generating tube 510 injects SiH ₄ or TEOS gas. Form a plasma. In the case of etching, the same gas as the XF series (NF ₃ , F ₂ , C ₃ F ₈ , SF _6, etc.) and O ₂ is used into the first shower head 310 and the plasma generating tube 510. In addition, He, Ar, N _{2, and the like, which} are inert gases, are also supplied to the first shower head 310 and the plasma generating tube 510 to supply the same gas. Etch gases include NF ₃ , F ₂ , BCl ₃ , CH ₄ , Cl ₂ , CF ₄ , CHF ₃ , CH ₂ F ₂ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , C ₅ F ₈ , C ₄ F ₆ may be used. Of course, the present invention is not limited thereto, and a thin film may be formed using SiH ₄ , TEOS, O ₂ , NH ₄ , N ₂ O, CaHb (hydrocarbon compound), and the like. Inert gases such as He, Ar, and N ₂ may be used as auxiliary gases for plasma generation.

The chamber 100 is manufactured in a rectangular cylinder shape with an empty inside, but a predetermined internal space is provided therein. The shape of the chamber 100 is not limited thereto, and may be manufactured in various shapes corresponding to the shape of the substrate S. Although not shown, a chamber 100 is provided at one side thereof with an entrance (not shown) through which the substrate S enters and exits, a pressure regulating means (not shown) for regulating the pressure inside the chamber 100, And exhaust means (not shown) for exhausting the inside of the exhaust pipe. Such chambers are preferably grounded. In the embodiment, since the first and second shower heads 310 and 320, the plasma generating tube 510, and the plurality of magnetic field generating units 600 are installed in the upper region of the chamber 100, the first and second showers are provided. It is necessary to insulate between the heads 310 and 320, the plasma generating tube 510, and the plurality of magnetic field generating units 600. Accordingly, the first and second showerheads 310 and 320, the plasma generating tube 510, and the plurality of magnetic field generators 600 are installed on the sidewalls of the chamber 100 in the sidewalls of the chamber 100. The first insulating member 110a is mounted, the second insulating member 110b is mounted on the upper wall of the chamber 100, and the third insulating member 110c is mounted on the upper surface of the first shower head 310. . Here, the first to third insulating members 110c may be manufactured in the form of a coating film by using an insulating material, for example, a plate made of ceramic or pyrex or by covering a material made of ceramic or pyrex.

The substrate supporting unit 200 is disposed below the second shower head 320 in the chamber 100, and has a substrate supporting member 210 having one end of the substrate S disposed thereon, and one end of the substrate supporting member 210. ) And the other end protrudes outward from the bottom of the chamber 100 to include a shaft 220 connected to the third power supply 230. The substrate support member 210 may be, for example, an electrostatic chuck for supporting and fixing the substrate S by using electrostatic force or a means for supporting and fixing the substrate S by using vacuum suction force. Of course, the present invention is not limited thereto, and various means capable of supporting the substrate S may be used as the substrate support member 210. Although not shown, a heater (not shown) for heating the substrate S, a cooling line (not shown) for cooling the substrate support member 210, or the substrate S may be provided inside the substrate support member 210. Can be mounted. Although not shown, the other end of the shaft 220 may be connected to a driving unit (not shown) that raises or lowers the shaft 220 or the substrate support member 210.

The first shower head 310 is installed to extend in the width direction of the chamber 100 at the upper side of the substrate support unit 200 and injects the raw material gas through the plurality of first injection holes 310a. In addition, the first shower head 310 is connected to the first source supply line 330 for supplying the source gas and the first power supply unit 340 for applying power for plasma generation. The second shower head 320 is positioned between the first shower head 310 and the substrate support member 210 in the chamber 100, and is installed along the extending direction of the first shower head 310 and is grounded. do. In addition, a plurality of second injection holes 310b are provided in the second shower head 320, and the second injection holes 310b are directly under the first injection holes 310a provided in the first shower head 310. Located in, the source gas passing through the first injection hole 310a is in communication with each other so that the second injection hole (310b) can be introduced. Of course, the present invention is not limited thereto, and the first injection hole 310a and the second injection hole 310b may be alternately disposed. The size of each of the first and second injection holes 310a and 310b may be 0.01 inch or more. This suppresses arcing in the first shower head 310 and the second shower head 320 when power is applied to the first shower head 310, and generates parasitic plasma when the plasma is generated. This is to suppress the.

Hereinafter, a process of generating plasma in a space between the first shower head 310 and the second shower head 320 will be described.

When the raw material gas is supplied from the first raw material supply line 330 to the first shower head 310, the raw material gas is supplied to the first shower head 310 and the second shower head through the plurality of first injection holes 310a. It is injected into the space of 320. In this case, when the first power supply unit 340 supplies RF power to the first shower head 310 and grounds the second shower head 320, the first shower head 310 and the second shower head 320 are disposed. The source gas is discharged in the space between them to generate a plasma, preferably a capacitive plasma (CCP PLASMA). In the following description, a space between the first showerhead 310 and the second showerhead 320 is referred to as a 'first plasma region P1'. Gas plasmad in the first plasma region P1 moves downward of the second shower head 320 through the plurality of second injection holes 310b of the second shower head 320. At this time, since the bias power is applied to the substrate support member 210 on which the substrate S is seated thereon, cations in the plasma in the region between the second showerhead 320 and the substrate S are applied to the surface of the substrate S. By entering or colliding, a thin film is formed on the substrate S, or the thin film formed on the substrate S or the substrate S is etched. Here, since a predetermined low DC power is applied to the substrate support member 210, a separate plasma due to the second showerhead 320 and the substrate support 210 is not generated. Hereinafter, the region between the second showerhead 320 and the substrate S will be referred to as a 'reaction region R'. As described above, the capacitive plasma CCP PLASMA generated in the first plasma region P1 compensates for the decrease in density of the resonance plasma generated from the plasma generating tube 510, which will be described later, to reach the substrate S. It is to. That is, the resonant plasma generated in the plasma generating tube 510 tends to decrease in density as it moves away from the antenna 520. Therefore, the density of the resonance plasma generated from the plasma generating tube 510 may reach the substrate. Thus, the embodiment further generates a capacitive plasma (CCP PLASMA) to compensate for the physical density reduction of the resonant plasma. In addition, the resonant plasma generated in the plasma generating tube 510 has high ion energy and a moving speed, and when only the resonant plasma is used alone, the substrate S or the thin film formed on the substrate S may be damaged. However, as in the embodiment, in the first plasma region P1, a capacitive plasma having a lower ion energy and a lower plasma density than the resonant plasma is generated together, and the substrate S is formed by the interaction of the resonant plasma and the capacitive plasma. Or damage the thin film.

The plasma generating tube 510 is manufactured in a pipe shape having an inner space, and an antenna 520 is wound around the outer circumferential surface thereof. The plasma generating tube 510 extends in the longitudinal direction of the chamber 100 and is mounted to penetrate the first and second shower heads 310 and 320 in the vertical direction. That is, the plasma generating tube 510 extends from the upper side of the first shower head 310 to the lower portion of the second shower head 320, and the lower portion of the plasma generating tube 510 is formed of the second shower head 320. It is preferable not to protrude downward. In the embodiment, a plurality of plasma generating tubes 510 are provided and arranged to be spaced apart from each other. The plasma generating tube 510 is manufactured using an insulating material such as pyrex and ceramic. It consists of an insulated container (not shown). For example, pyrex or ceramics can be used as the insulating container (not shown). The antenna 520 winds up the outer circumferential surface of the plasma generating tube 510, that is, the insulating container (not shown), and one end thereof is connected to the second power supply 540. The antenna 520 according to the embodiment is made of copper (Cu), and wound around the outer circumferential surface of the plasma generating tube 510 in a helix. However, the shape of the antenna 520 is not limited to the above-described helica, and various shapes, for example, Nagoya type, half-nagoya type, double-leg type, double hafr-turn type, and boswell (double-saddle) type. It can be manufactured in various shapes such as shoji type and phased type. Such an antenna 520 preferably has a length that is an integer multiple of λ / 2 when the excitation frequency wavelength is λ. This is because the antenna 520 is wound around each of the plurality of plasma generating tubes 510 so as to quickly match impedances of the plurality of antennas 520 to reduce generation of an unstable plasma when RF power is applied.

Hereinafter, a process of generating plasma in the plasma generation tube will be described.

When the raw material gas is supplied from the second raw material supply line 530 to the plasma generating tube 510, and RF power is applied to the antenna using the second power supply 540, the raw material gas is discharged in the plasma generating tube. Plasma is generated. Hereinafter, the inside of the plasma generation tube is referred to as a 'second plasma region P2'. At this time, the antenna 520 is wound around the plasma generating tube 510 in a spiral, the length of the antenna 520 is an integer multiple of λ / 2 as described above, in a narrow space inside the plasma generating tube 510 Since the reaction is performed, high density resonant plasma is generated in the second plasma region P2. The cations in the resonant plasma generated in the second plasma region P2 are incident or collided with the surface of the substrate seated on the substrate support member 210 by a bias power applied to the substrate support member 210. Therefore, a thin film is formed on the substrate S or the thin film formed on the substrate S or the substrate S is etched.

As described above, the resonant plasma generated in the second plasma region P2 has a high density and has high ion energy and plasma density moving toward the substrate S, thereby improving the process speed. However, as the resonance plasma reaches the substrate, its density may decrease, which is compensated by the capacitive plasma (CCP PLASMA) generated in the first plasma region P1. Therefore, it is possible to prevent the overall density of the plasma reacting with the substrate S from decreasing. In addition, the resonant plasma generated in the plasma generating tube 510 has high ion energy and a moving speed, and when only the resonant plasma is used alone, the substrate S or the thin film formed on the substrate S may be damaged. However, as in the embodiment, in the first plasma region P1, a capacitive plasma having a lower ion energy and a lower plasma density than the resonant plasma is generated together, and the substrate S is formed by the interaction of the resonant plasma and the capacitive plasma. Or damage the thin film.

The magnetic field generator 600 is installed inside and outside the chamber 100 so that the plasma generated in the first plasma region P1 and the plasma generated in the second plasma region P2 can be uniformly diffused. It serves to generate. The magnetic field generator 600 is installed in at least one of the inside of the chamber 100 and the outside of the chamber. The magnetic field generating unit 600 installed in the chamber 100 may be located above the third insulating member 110c mounted on the first shower head 310. That is, the magnetic field generator 600 installed inside the chamber 100 may include the second insulation member 110b mounted on the upper wall of the chamber 100 and the third insulation mounted on the first shower head 310. It is mounted between the members 110c. In addition, the plasma generating tubes 510 are spaced apart from each other. The magnetic field generating unit 600 installed outside the chamber 100 is installed to surround the chamber 100, and is preferably installed above and below the chamber 100. Of course, the position of the magnetic field generator 600 installed outside the chamber 100 may be variously changed. Magnetic field generating unit 600 according to the embodiment is made of an electromagnetic coil. Here, the magnetic field generating unit 600 is manufactured in the form of a coil, the magnetic field generating unit 600 disposed in the chamber 100 is installed to surround the plasma generating tube 510, the magnetic field generating unit ( 600 is installed to surround the chamber 100. When power is applied to the magnetic field generator 600, a magnetic field is generated outside and inside the chamber 100, and the magnetic field is generated in the capacitive plasma and the second plasma region generated in the first plasma region P1. It serves to spread the resonant plasma uniformly. For example, when the magnetic field generating unit 600 is not mounted, the inside of the second plasma generating tube 510 has a high plasma density, but the plasma of the reaction region R corresponding to the lower side of the second shower head 320 is lower. Low density Therefore, the magnetic field generating unit 600 is mounted to the outside and the inside of the chamber 100, and by applying a magnetic field around the plasma generating tube 510, the resonant plasma is induced to linearly move along the magnetic flux of the magnetic field. As a result, the resonant plasma inside the plasma generating tube 510 moves to the outside and is uniformly dispersed in the entire reaction region.

In the above, it has been described that the plasma generating tube 510 extends from the upper side of the first shower head 310 to the lower side of the second shower head 320. However, the present invention is not limited thereto, and the plasma generating tube 510 is installed to extend from the upper side of the first shower head 310 to the lower side of the first shower head 310 as in the second embodiment shown in FIG. 2. Can be. That is, the plasma generating tube 510 is installed so as not to protrude below the first shower head 310. In addition, as in the third exemplary embodiment illustrated in FIG. 3, the second shower head 320 is not installed below the first shower head 310, and the plasma generating tube 510 is disposed in the first shower head 310. It may be installed to extend from the upper side to the lower portion of the first shower head 310.

In addition, in FIGS. 1 to 3, the magnetic field generator 600 is installed in both the inside and the outside of the chamber 100. However, the present invention is not limited thereto, and in each case of the first to third embodiments illustrated in FIGS. 1 to 3, the magnetic field generating unit 600 may be installed in any one of the inside and the outside of the chamber 100. have.

Hereinafter, an operation and a substrate processing method of the substrate processing apparatus according to the first embodiment will be described with reference to FIG. 1.

First, the substrate is introduced into the chamber 100 and the substrate S is seated on the substrate supporting member 210 disposed in the chamber 100. In the embodiment, the wafer is used as the substrate S, but is not limited thereto. Various substrates such as a glass substrate, a polymer substrate, a plastic substrate, and a metal substrate may be used.

When the substrate S is placed on the substrate supporting member 210, the raw material gas is supplied to the first shower head 310 through the first raw material supply line 330, and the first power supply unit 340 is used. RF power is applied to the first shower head 310 and the second shower head 320 is contacted. In addition, a bias power is applied to the substrate support member 210, and power is applied to the plurality of magnetic field generators 600 installed inside and outside the chamber 100 to generate a magnetic field. Accordingly, the space between the first shower head 310 and the second shower head 320, that is, the first plasma region P1, is formed through the plurality of first injection holes 310a of the first shower head 310. The raw material gas is injected. Since RF power is applied to the first shower head 310 and the second shower head 320 is grounded, a capacitive plasma CCCP plasma is generated in the first plasma region P1. Subsequently, the capacitive plasma generated in the first plasma region P1 is lower than the second shower head 320, that is, the reaction region through the plurality of second injection holes 310b of the second shower head 320. Go to R).

 The raw material gas is supplied to the first shower head 310 through the first raw material supply line 330, and RF power is applied to the first shower head 310. The source gas is supplied into the plasma generating tube 510 and RF power is applied to the antenna around the plasma generating tube 510 using the second power supply 540. Thus, a resonant plasma is generated in the plasma generating tube 510, that is, in the second plasma region P2. At this time, the resonant plasma generated in the plasma generating tube 510, that is, in the second plasma region P2, moves to the reaction region while performing linear motion by the magnetic flux of the magnetic field generated by the magnetic field generator 600. Therefore, the resonant plasma generated in the second plasma region P2 is uniformly diffused throughout the reaction region.

As described above, the plasma generated in the first plasma region P1 and the plasma generated in the second plasma region P2 form a thin film on the substrate S or etch the substrate S or the thin film. That is, the cations of the plasma generated in the first plasma region P1 and the plasma generated in the second plasma region P2 are incident or collided with the substrate S to which the bias power is applied, thereby forming a thin film on the substrate S. Or etching the substrate (S) or thin film.

Meanwhile, the resonant plasma generated in the second plasma region P2 may decrease in density while moving to the reaction region R, which is compensated by the capacitive plasma generated in the first plasma region P1. . Therefore, the density of the resonant plasma can be reduced to prevent the process speed from being reduced, and the process time for processing the substrate S can be shortened as compared with the conventional art. In addition, the resonant plasma generated in the plasma generating tube 510 has high ion energy and plasma density, and when only the resonant plasma is used alone, the substrate S or the thin film formed on the substrate S may be damaged. have. However, as in the embodiment, in the first plasma region P1, a capacitive plasma having a lower ion energy and a lower plasma density than the resonant plasma is generated together, and the substrate S is formed by the interaction of the resonant plasma and the capacitive plasma. Or damage the thin film. Therefore, a thin film excellent in film quality can be formed.

100: chamber 200: substrate support unit
110a to 110c: first to third insulating members 310: first showerhead
320: second showerhead 510: plasma generating tube
520: antenna 600: magnetic field generating unit

Claims (13)

A chamber having an internal space;
A shower head disposed in the chamber and having a power applied to generate plasma to form a first plasma region inside or outside;
A plasma generation tube extending in the chamber in the longitudinal direction of the chamber, penetrating the shower head, and having a second plasma region formed therein; And
And an antenna installed to surround an outer circumferential surface of the plasma generation tube and to which power for plasma generation is applied. The method according to claim 1,
Capacitive plasma (CCP PLASMA) is generated in the first plasma region, resonant plasma is generated in the second plasma region. The method according to claim 1,
The shower head includes a first shower head which is located on the upper side and RF power is applied, a second shower head spaced below and grounded below the first shower head,
And the first plasma region is an area between the first showerhead and the second showerhead. The method according to claim 3,
And the plasma generating tube penetrates the first and second shower heads in a vertical direction and extends from an upper side of the first shower head to a lower part of the second shower head. The method according to claim 3,
And the plasma generating tube penetrates the first shower head in a vertical direction and extends from an upper side of the first shower head to a lower portion of the first shower head. The method according to claim 1,
And a magnetic field generator disposed in at least one of the inside and the outside of the chamber to generate a magnetic field. The method of claim 6,
The magnetic field generating unit disposed inside the chamber is located above the shower head. The method according to claim 1,
And a plurality of plasma generating tubes are disposed to be spaced apart from each other, and a magnetic field generating unit is disposed between the plasma generating tubes. The method of claim 6,
An insulating member is disposed in the surrounding areas of the shower head, the plasma generating tube, and the magnetic field generating part of the chamber inner wall, the insulating member is disposed above the shower head, and the magnetic field generating part is disposed above the insulating member mounted on the shower head. Substrate processing apparatus. The method of claim 6,
A substrate processing apparatus using an electromagnet coil as the magnetic field generator. The method according to claim 1,
The plasma generating tube is manufactured using an insulating material. The method according to claim 1,
A substrate processing apparatus disposed under the shower head in the chamber to support a substrate and to receive a bias power. The method according to claim 1,
And a second raw material supply line for supplying a raw material gas to the shower head and a second raw material supply line for supplying a raw material gas into the plasma generating tube.

Images