KR101195873B1 - Epoxy resin compositions for encapsulating semiconductor device - Google Patents

Abstract

상기 화학식 1에서, R 은 각각 독립적으로 수소, C₁ 내지 C₁₂의 알킬이며; n은 0 내지 10의 정수이다.The present invention relates to an epoxy resin composition for semiconductor element encapsulation having excellent moldability and exhibiting self-extinguishing, and more particularly, to an epoxy resin composition comprising an epoxy resin, a curing agent, and an inorganic filler of Formula 1 below. The epoxy resin composition for encapsulating semiconductor devices according to the present invention exhibits excellent self-extinguishing properties without using inorganic flame retardants such as halogen-based organic flame retardants and antimony trioxide, which are known to be harmful to the environment, and exhibits excellent flame retardancy and heat resistance.
[Formula 1]

In Formula 1, R is each independently hydrogen, C ₁ To C ₁₂ alkyl; n is an integer of 0-10.

Description

Epoxy resin compositions for encapsulating semiconductor device

INDUSTRIAL APPLICABILITY The present invention is for encapsulating semiconductor devices containing 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl type epoxy resin which is excellent in moldability and can provide high self-extinguishing property with high heat resistance structure. The epoxy resin composition of this invention is related.

In general, in providing an epoxy resin composition for encapsulating a semiconductor device, a flame retardant property that does not burn in a fire is required, and most semiconductor manufacturers require a resin composition that meets the flame retardant standard of UL 94 V-0.

In order to secure such flame retardancy, conventionally, halogen-based epoxy resin and antimony trioxide have been mainly used to secure flame retardancy. However, in the case of epoxy resin for encapsulating semiconductor devices using halogen-based flame retardant, dioxin, etc. Toxic carcinogens and harmful gases such as hydrogen bromide and hydrochloric acid are not only toxic to the human body but also act as a major cause of corrosion of semiconductor chips, wires and lead frames. There was.

When an organic phosphorus flame retardant such as phosphate ester is used as an alternative flame retardant of halogen flame retardant, phosphoric acid and polyphosphoric acid generated by water deteriorate the reliability of the semiconductor, and inorganic flame retardant has an increase in absorption rate. Have

Epoxy resin compositions containing epoxy resins and curing agents thereof as essential components are excellent in physical properties such as high heat resistance and low viscosity, and thus are used in electronic components such as semiconductor sealing materials and printed circuit boards, electronic component fields, composite material matrices, and photoresist materials. Widely used. In recent years, the improvement of the performance represented by high heat resistance and high moisture resistance is calculated | required in these various advanced material applications. Especially in the field of semiconductor encapsulation materials, the reflow treatment temperature has increased due to the transition to surface-mount packages called BGA and CSP and the use of lead-free solder, so that resin materials for encapsulating electronic components with high heat resistance and high moisture resistance It is required.

As an electronic component sealing material which meets these requirements, the methoxy group containing phenol resin obtained by novolak-resining the methoxylated resol resin obtained by methoxylating the phenolic hydroxyl group in a resol resin under an acid catalyst, for example, is used for epoxy resins. As a curing agent, a technique is known that improves fluidity and imparts flexibility to a cured product to improve moisture resistance and impact resistance (Japanese Laid-Open Patent Publication No. 2004-10700). Another example is an epoxy resin that exhibits high heat resistance, and a phenol resin obtained by reacting an excess of an intermediate such as p-xylene glycol and naphthalene glycol with a phenol compound, and a phenol resin in which aralkyl structures and aromatic compounds are alternately positioned. And a technique of epoxidation by reacting the above phenol resins with epichlorohydrin are known (Japanese Laid-Open Patent Publication No. 1996-301980). Such epoxy resins have a high content of aromatic structural parts in the polymer structure and exhibit excellent heat resistance, but have a disadvantage in that the curability is remarkably lowered due to the decrease in the concentration of the functional group.

Recently, in order to increase the mounting density with high integration of IC circuits, the demand for multi-chip packages is required to be smaller and thinner, and it is difficult to cope with the required performance with conventional epoxy resins, so that softening point and melt viscosity Further, the structure of the epoxy compound having lower mechanical properties such as moisture resistance and impact resistance and satisfying physical properties such as heat resistance and moisture resistance has been further studied. In order to satisfy the above required physical properties, epoxy resins have been developed and used using crystalline compounds. For example, a crystalline fluorene type epoxy resin composition (Korean Laid-Open Patent Publication No. 2004-0116630) or an epoxy resin of 3,3 "-diphenyl-4,4" -dihixiphenyl (Japanese Laid-Open Publication 2000) -248050) and the like are known, but an epoxy resin composition for semiconductor encapsulation is not sufficient because it does not fully satisfy good moldability and self-extinguishing property.

Accordingly, the present inventors have studied to overcome the problems of the prior art, and as a result, a novel epoxy resin having excellent moldability and self-extinguishing properties without using a halogen flame retardant or phosphorus flame retardant that is harmful to a human body or a semiconductor device is It is an object of the present invention to provide an epoxy resin composition for semiconductor element encapsulation having excellent flame retardancy by using it and to provide it.

The present invention relates to an epoxy resin composition comprising 1) an epoxy resin, 2) a hardener, and 3) an inorganic filler,

Epoxy resin of the above 1) is any one selected from the group consisting of epoxy resin of 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl represented by the following formula (1) or the following formula (2) and (3) The above epoxy resins were mixed;

The curing agent of 2) is a mixture of a phenol resin represented by the following formula (4) and a biphenyl type phenol resin represented by the following formula (5)

It is related with the epoxy resin composition for semiconductor element sealing characterized by the above-mentioned.

In Formula 1, R is each independently hydrogen, C ₁ To C ₁₂ alkyl; n is an integer of 0-10.

In Formula 2, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.

In Formula 3, n is an integer of 0 to 10.

In Formula 4, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.

In Formula 5, R ₁ is hydrogen, alkyl or an aromatic substituent, R ₂ is each independently hydrogen or an alkyl group, a is an integer of 0 to 4, m is an integer of 1 to 3 indicating the number of substituents R and n is an integer of 1-10.

The epoxy resin composition for encapsulating a semiconductor device according to the present invention has excellent moldability and exhibits excellent self-extinguishing properties without using inorganic flame retardants such as halogen-based organic flame retardants and antimony trioxide, which are known to be harmful to the environment, and are flame retardant and heat resistant. It is effective.

The present invention relates to an epoxy resin composition comprising 1) an epoxy resin, 2) a hardener, and 3) an inorganic filler, wherein the epoxy resin of 1) is 4,4 "-dihydroxy-5"-represented by the following formula (1): An epoxy resin of phenyl-meth-terphenyl alone or a mixture of one or more epoxy resins selected from the group consisting of the following Chemical Formulas 2 and 3; The curing agent of 2) relates to an epoxy resin composition for semiconductor element encapsulation, which is a mixture of a phenol resin represented by the following formula (4) and a biphenyl type phenol resin represented by the following formula (5).

[Formula 1]

In Formula 1, R is each independently hydrogen, C ₁ To C ₁₂ alkyl; n is an integer of 0-10.

[Formula 2]

In Formula 2, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.

(3)

In Formula 3, n is an integer of 0 to 10.

[Formula 4]

In Formula 4, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.

[Chemical Formula 5]

In Formula 5, R ₁ is hydrogen, alkyl or an aromatic substituent, R ₂ is each independently hydrogen or an alkyl group, a is an integer of 0 to 4, m is an integer of 1 to 3 indicating the number of substituents R and n is an integer of 1-10.

Hereinafter, the present invention will be described in detail.

The present invention includes 1) an epoxy resin, 2) a curing agent, and 3) an inorganic filler as essential components, and the total amount of the epoxy resin and the curing agent is 5 to 30% by weight of the total content, and the inorganic filler is 70 to 95 as a remaining amount. It is characterized by providing the epoxy resin composition for semiconductor element sealing which consists of weight%. Each component is described in detail as follows.

Epoxy resin

In the composition according to the present invention, 1) the epoxy resin is a single epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the formula (1), or The phenol novolak-type epoxy resin represented by the said Formula (2) and the biphenyl represented by the said Formula (3) to the epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the said Formula (1) An epoxy resin produced by mixing at least one or more of the type phenol epoxy resins can be used.

The epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the formula (1) includes various epoxy resins having different epoxy equivalents and softening points depending on the type of R and Q. Preferably, epoxy equivalent is 200-500, and it is good to use the thing whose softening point is 50 degreeC-80 degreeC.

The method for producing the epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the formula (1) is as follows.

In the case of the epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the formula (1) (a) 4,4 "-dihydroxy-5 'represented by the following formula (6) Reacting the -phenyl-meth-terphenyl compound with epihalohydrin at 50 to 150 DEG C for 0.1 to 20 hours to obtain a halohydrin ether, and (b) adding an alkali metal hydroxide to the obtained halohydrin ether. It may be prepared through a step by reacting at 20 to 150 ℃ for 1 to 20 hours, which is shown in Scheme 1 below.

[Reaction Scheme 1]

In Chemical Formula 6 and Scheme 1, R is each independently hydrogen, C ₁ To C ₁₂ alkyl; n is an integer of 0 to 10; X is a halogen element.

The amount of epihalohydrin used is 0.5 to 50 moles based on 1 equivalent of the hydroxyl group (OH) of the 4,4 "-dihydroxy-5'-phenyl-meth-terphenyl compound represented by the formula (6). It is preferable to use 1 to 20 mol more preferably. The kind of epihalohydrin used is not particularly limited, but epichlorohydrin is preferably used. The use of aprotic polar solvents such as DMF and DMSO in the reaction can reduce the hydrolyzable halogen concentration, making it suitable for use in encapsulants for electronic materials. The amount of aprotic polar solvent is preferably 10 to 100% by weight, preferably 15 to 70% by weight based on the amount of epihalohydrin used.

The present invention may add a quaternary ammonium salt as a catalyst in the step (a). As the quaternary ammonium salt, for example, tetramethylammonium chloride, trimethylbenzyl ammonium chloride, etc. may be used, but is not limited thereto.

A quaternary ammonium salt may be added as a catalyst to the reaction mixture of the compound represented by Formula 6 and epihalohydrin as a catalyst to obtain halohydrin ether, and an alkali metal hydroxide may be added thereto to obtain an epoxy resin. The quaternary ammonium salt catalyst preferably uses from 0.001 to 0.2 mol based on 1 equivalent of hydroxyl group (OH) of the 4,4 "-dihydroxy-5'-phenyl-meth-terphenyl compound represented by the formula (6), Most preferably, 0.05 to 0.1 mole is used.

The amount of the alkali metal hydroxide used in the present invention is 0.5 to 1.5 moles based on 1 equivalent of the hydroxyl group (OH) of the 4,4 "-dihydroxy-5'-phenyl-meth-terphenyl compound represented by the formula (6). It is preferable to use, and it is preferable to use 0.7-1.2 mol more preferably. As the alkali metal hydroxide, a general alkali metal hydroxide such as sodium hydroxide or potassium hydroxide may be used. The alkali metal hydroxides may be added all at once in a solid state or added dropwise for 0.1 to 20 hours in a temperature range of 20 ° C to 120 ° C. Alternatively, the alkali metal hydroxide may be continuously added in the form of an aqueous solution, or the metal hydroxide may be added while refluxing water and epihalohydrin at distillation temperature under normal pressure.

The epoxy resin prepared above is preferably washed with water after the reaction or by removing the excess epihalohydrin by heating under reduced pressure and then dissolved in a solvent such as toluene, xylene or methyl isobutyl ketone, and then dissolved in sodium hydroxide and hydroxide. After adding an aqueous solution of an alkali metal hydroxide such as potassium, it is preferable to proceed with the reaction once more. In this case, the amount of the alkali metal hydroxide is preferably 0.05 to 0.2 mol, and most preferably based on 1 equivalent of the 4,4 "-dihydroxy-5'-phenyl-meth-terphenyl compound hydroxyl group represented by the formula (6). Preferably 0.1 to 0.1 mole is used. The reaction temperature is preferably 50 to 120 ° C., and the reaction time is performed at room temperature for 0.5 to 2 hours.

After completion of the reaction, the by-product salt is washed off with water, and the solvent, such as toluene, xylene and methyl isobutyl ketone, is removed under reduced pressure, thereby obtaining an epoxy resin having a low halogen content. The epoxy resin may include a compound in which one OH group does not become an epoxidized compound among two phenolic OH groups, and may also include an oligomer type generated by attacking the epoxidized phenol group. By the above method, an epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound represented by the formula (1) can be prepared.

The phenol novolac-type epoxy resin of Formula 2 may be used a variety of epoxy resins having different epoxy equivalents and softening point, it is preferable to use a softening point of 50 ℃ to 80 ℃.

As the biphenyl type phenol epoxy resin of Formula 3, various kinds of epoxy resins having different epoxy equivalents and softening points may be used. Preferably, the softening point has a softening point of 55 ° C to 65 ° C.

When using such an epoxy resin mixture, the epoxy resin composition for semiconductor element sealing which has the optimal flame retardance and heat resistance can be provided.

The softening point of the epoxy compound of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound of the formula 1 of the present invention is shown below 65 ℃ can be used in the resin mixture in a high content. That is, the epoxy resin of the 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl compound of Chemical Formula 1 may use 5 to 95% by weight in the total epoxy resin mixture. More preferably 25 to 95% by weight may be used, and most preferably 50 to 95% by weight based on the total epoxy resin mixture. When used in more than 50% by weight, there is an advantage that the flame retardancy is further increased.

Preferably at least any one selected from the group consisting of Formulas 2 and 3 to 5 to 95% by weight of the epoxy resin of 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl represented by Formula 1 It is preferable to use the above epoxy resin in the form of an epoxy resin mixture containing 5 to 95% by weight.

The epoxy resin mixture is preferably used in 5 to 10% by weight in the epoxy resin composition, more preferably 6 to 9% by weight. When the epoxy resin is used in less than 5% by weight, there is a problem in workability and moldability, and in the case of using more than 10% by weight, performance and flame retardancy are inferior.

Hardener

In the composition according to the present invention, the 2) curing agent may be used alone or a mixture of the two materials, each of the phenol resin represented by the formula (4) and the biphenyl-type phenol resin represented by the formula (5). Preferably, a phenol resin mixture composed of 5 to 95 wt% of the phenol resin represented by Formula 4 and 5 to 95 wt% of the biphenyl type phenol resin represented by Formula 5 may be used.

The curing agent is preferably used in 3 to 7% by weight in the epoxy resin composition. When the curing agent is used in less than 3% by weight, there is a problem in processability and moldability, and in the case of using more than 7% by weight, performance and flame retardancy are inferior.

The phenol resin of the formula (4) is preferably a hydroxyl group equivalent of 100 to 120, the softening point is in the range of 70 ℃ to 85 ℃.

The biphenyl type phenol resin represented by the formula (5) is preferably a hydroxyl group equivalent of 200 to 220, a softening point of 60 to 70 ℃.

Inorganic filler

In the composition according to the present invention, 3) the inorganic filler may be used as a silica powder without limitation, but preferably use an average particle diameter of 0.1 to 35 ㎛, for example spherical, square, melt A mold or the like can be used, and more preferably, a molten silica spherical powder having an average particle diameter of 10 to 20 µm is used.

The inorganic filler is preferably used in 70 to 95% by weight in the total epoxy resin composition, more preferably 80 to 90% by weight. When the inorganic filler is applied in an amount of less than 70% by weight, there may be a problem that can not be obtained sufficient flame retardancy and performance, if it exceeds 95% by weight, the moldability is worse due to the deterioration of the flow characteristics there is a problem.

In the composition according to the present invention, it is more preferable to add a curing accelerator. For example, tertiary amines such as benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tri (dimethylaminomethyl) phenol, and imidazoles such as 2-methylimidazole and 2-phenylimidazole. , Organic phosphines such as triphenylphosphine, triphenylphosphine and parabenzophenone coordination compounds, diphenylphosphine, phenylphosphine or tetraphenylphosphonium tetraphenylborate, triphenylphosphine tetraphenylborate, etc. Phenyl boron salt etc. can be used, One or two or more of these can be used together. As for the usage-amount, 0.05-0.4 weight% is suitable with respect to the whole epoxy resin composition.

To the composition of the present invention, a release agent such as a higher fatty acid, a higher fatty acid metal salt, an ester wax, and a natural wax, a coupling agent such as an epoxy silane, an amino silane, or an alkyl silane may be added and used as necessary without departing from the object of the present invention. Can be.

As a general method for producing an epoxy resin composition using the composition as described above, a predetermined amount is uniformly mixed by using a hand mixer, Henschel mixer or V-bender, and then 95 to 105 ° C. in a roll mill. Melt kneading at 3 ° C. for 4 to 4 minutes or melt kneading at 95 ° C. to 105 ° C. with a kneader for 3 to 4 minutes, cooling at 25 ° C. for at least 2 hours, and then crushing with a crusher to obtain a final powder product. Can be used.

In the present invention, as a method of sealing a semiconductor device using the obtained epoxy resin composition, using a low pressure transfer molding method, C stage (maintaining about 2 to 5 minutes at 170 to 180 ° C. to maintain a curing conversion ratio of 85 to 95%). It is common to make a mold, but it is also possible to mold by injection molding or casting.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited by Examples.

< Example  1> 4,4 "-dihydroxy-5'- Phenyl - Meta - Terphenyl  Preparation of Epoxy Resin Using

4,4 “-dihydroxy-5'-phenyl-m-terphenyl (R ₁ , R ₂ , R ₃ , Q are all substituted with hydrogen) (42.4g, 0.094 mol), isopropyl alcohol (30ml), epi Chlorohydrin (92 ml, 1.12 mol) and distilled water (10 ml) were mixed and dissolved in an oil bath at 65 ° C., and 16 g of 45 wt% NaOH aqueous solution was added dropwise for 15 minutes and reacted at the same temperature for 2 hours. After cooling to room temperature (25 ℃). The organic layer was separated, washed twice with 100 ml of distilled water, and the excess epichlorohydrin was removed by concentration under reduced pressure, and then reduced in a vacuum oven at 100 ° C. for 3 hours to remove volatile organics. The remaining residue was taken out and dissolved in 60 ml of toluene when it was hot. 5 g of 45% by weight of NaOH was added dropwise for 5 minutes while stirring in an oil bath at 70 ° C. for 5 minutes, followed by 5% of NaH ₂ PO _4. An aqueous solution was added to neutralize. 200 ml of dichloromethane was added to the organic layer, and the organic layer was washed with distilled water sufficiently to be neutral and the organic layer was separated. The organic layer was dried with MgSO ₄ , filtered over Celite, and distilled under reduced pressure to evaporate the organic solvent. The organic solvent was then evaporated under a vacuum oven at 100 ° C. for 3 hours to remove volatile organic compounds, thereby obtaining an epoxy resin compound. Melting point 151 ℃, Softening point 62.5 ℃, Epoxy equivalent 222, Hydrolyzable chlorine concentration: 891ppm

¹ H NMR (CDCl ₃ ): δ 7.5 to 7.7 (dd, 4H, aromatic), 7.52 to 7.25 (m, 3H, Ar-H), 7.0 to 7.2 (dd, 4H, aromatic), 4.4 (m, 2H, OCH ₂ CHO CH ₂ ), 4.2 (m, 2H, OCH ₂ CHO CH ₂ ), 3.4 (m, 2H, OCH ₂ CH OCH ₂ ), 2.95 (m, 2H, O CH ₂ CHOCH ₂ ), 2.80 (m, 2H, O CH ₂ CHOCH ₂ )

< Example  2 to 5> manufacturing epoxy resin composition for semiconductor element encapsulation

In order to manufacture the epoxy resin composition for encapsulation of the semiconductor device of the present invention, each component was weighed as shown in Table 1 below, and then uniformly mixed by hand mixing, followed by two roll mills of an oil heating melt mixing method. It melt-kneaded at 100 degreeC for 4 minutes (B-stage state), and obtained the sheet state. After cooling the molded sample in a sheet state, it was pulverized using a crusher, and a test piece was prepared from a powder sample that passed about 4 mm. Flame-retardant test pieces (125 x 25 x 12.6 mm) were obtained by molding for 120 seconds at 175 ℃ using a transfer molding machine, and then subjected to post-curing for 5 hours at a temperature of 175 ℃ in a drying oven.

Physical properties, flame retardancy, and heat resistance test results of the epoxy resin composition according to the present invention are shown in Table 2 below.

< Comparative example  1 to 2

As shown in Table 1 below, each component was weighed according to a given composition to prepare an epoxy resin composition in the same manner as in Examples 2 to 5, and the physical properties thereof were shown in Table 2 below.

[Property evaluation method]

* Flame retardant: evaluated according to UL 94 V-0 standard.

* Heat resistance: The heat resistance was measured from room temperature to 900 ° C. at a temperature increase rate of 10 ° C./min under an air atmosphere using powder obtained by partially crushing the flame retardant test piece, and was evaluated by obtaining a temperature when the weight was reduced by 5% by weight. The instrument used TA Instrument's Q500.

Ingredient (% by weight) Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Epoxy
Suzy Epoxy Resin 1 7.73 4.25 1.86 3.36 - - Epoxy resin 2 0.85 4.25 3.70 3.36 0.92 8.24 Epoxy resin 3 - - 1.86 - 8.28 - Hardener Phenolic Resin 1 2.81 2.85 2.39 3.47 2.50 1.26 Phenolic Resin 2 2.81 2.85 2.39 - 2.50 - Flame retardant Brominated epoxy resin - - - - - 4.70 Antimony trioxide - - - - - 1.10 weapon
Filler Maximum particle size 110 ㎛ or less 85 85 87 89 85 83.9 Hardening
accelerant Triphenylphosphine 0.2 0.2 0.17 0.14 0.2 0.2 Coupling agent Epoxy
Silane coupling agent 0.3 0.3 0.3 0.3 0.3 0.3 Wax Carnauba Wax + Synthetic Wax 0.3 0.3 0.33 0.36 0.3 0.3 Epoxy resin 1; Epoxy Resin Represented by Formula 1 (R = H)
Epoxy resin 2; Epoxy resin represented by the formula (2) (Kukdo Chemical, YDCN500-5p)
Epoxy resin 3; Epoxy resin represented by Chemical Formula 3 (Japanese Chemical Co., Ltd., NC3000)
Phenol resin 1; Phenolic resin represented by the formula (4, Meiwasa, HF-1M)
Phenol resin 2; Phenolic resin represented by Chemical Formula 5 (Japan Meiwasa, MEH 7851M)
Brominated Epoxy Resin: Kukdo Chemical, YDB-400
Antimony trioxide: Cheil Chemical Antrox-ES
Inorganic filler: Korea Semiconductor FS-0081, SS-0182R
Epoxy-based silane coupling agent: Shin-Etsu S-510, Japan
Carnauba wax: Natural wax
Synthetic Wax: Modified PE wax
Equivalence ratio (OH / E): 1

Evaluation item Example 2 Example 3 Example 4 Example 5 Comparative Example 1 Comparative Example 2 Flammability UL 94 V-0 V-0 V-0 V-0 V-1 V-0 Heat resistance Td (℃) at 5wt% loss 451.9 415.0 469.6 433.1 415.0 407.4

As shown in Table 2, it can be seen that the resin composition according to the present invention exhibits excellent flame retardancy without using an environmentally harmful substance brominated epoxy resin and antimony trioxide used in Comparative Example 2.

Claims (7)

1) an epoxy resin composition comprising an epoxy resin, 2) a hardener, and 3) an inorganic filler,
The epoxy resin of the above 1) is 4,4 "-dihydroxy represented by the epoxy resin of 4,4" -dihydroxy-5 "-phenyl-meth-terphenyl represented by following General formula (1) or the following general formula (1) At least one epoxy resin selected from the group consisting of the following Chemical Formula 2 and Chemical Formula 3 is mixed with an epoxy resin of -5 ”-phenyl-meth-terphenyl;
The curing agent of 2) is a phenol resin represented by the following formula (4) and a biphenyl type phenol resin represented by the following formula (5) or a mixture thereof;
Epoxy resin composition for semiconductor element sealing characterized by the above-mentioned.
[Formula 1]

In Formula 1, each R is independently hydrogen, C ₁ to C ₁₂ alkyl; n is an integer of 0-10.
(2)

In Formula 2, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.
(3)

In Formula 3, n is an integer of 0 to 10.
[Chemical Formula 4]

In Formula 4, R is each independently hydrogen or an alkyl substituent, m is an integer of 1 to 3 representing the number of substituents R, n is an integer of 0 to 10.
[Chemical Formula 5]

In Formula 5, R ₁ is hydrogen, alkyl or an aromatic substituent, R ₂ is each independently hydrogen or an alkyl group, a is an integer of 0 to 4, m is an integer of 1 to 3 indicating the number of substituents R and n is an integer of 1-10.
According to claim 1, wherein the epoxy resin is represented by the formula (2) and (3) in 5 to 95% by weight of the epoxy resin of 4,4 "-dihydroxy-5" -phenyl-meth-terphenyl represented by the formula (1) Epoxy resin composition for sealing semiconductor device, characterized in that the epoxy resin mixture containing at least any one selected from the group consisting of 5 to 95% by weight.
According to claim 1, wherein the curing agent is a semiconductor, characterized in that the phenol resin mixture consisting of 5 to 95% by weight of the phenol resin represented by the formula (4) and 5 to 95% by weight of the biphenyl-type phenol resin represented by the formula (5) Epoxy resin composition for element sealing.
The epoxy resin composition of claim 1, wherein the inorganic filler is used in an amount of 70 to 95 wt% based on the epoxy resin composition.
The epoxy resin composition for semiconductor element encapsulation of claim 1, wherein the inorganic filler has an average particle diameter of 0.1 to 35 µm.
The epoxy resin composition for semiconductor element encapsulation according to claim 1, wherein the inorganic filler is a molten silica spherical powder.
The semiconductor element sealed using the epoxy resin composition for semiconductor element sealing of any one of Claims 1-6.