KR101170919B1 - Solar cell with enhanced energy efficiency by surface plasmon resonance effect - Google Patents
Solar cell with enhanced energy efficiency by surface plasmon resonance effect Download PDFInfo
- Publication number
- KR101170919B1 KR101170919B1 KR1020110064773A KR20110064773A KR101170919B1 KR 101170919 B1 KR101170919 B1 KR 101170919B1 KR 1020110064773 A KR1020110064773 A KR 1020110064773A KR 20110064773 A KR20110064773 A KR 20110064773A KR 101170919 B1 KR101170919 B1 KR 101170919B1
- Authority
- KR
- South Korea
- Prior art keywords
- thin film
- solar cell
- poly
- layer
- zno
- Prior art date
Links
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 title abstract description 6
- 230000000694 effects Effects 0.000 title description 3
- 239000010409 thin film Substances 0.000 claims abstract description 91
- 239000010931 gold Substances 0.000 claims abstract description 48
- 229910052737 gold Inorganic materials 0.000 claims abstract description 47
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000002245 particle Substances 0.000 claims abstract description 41
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 37
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 23
- 238000004519 manufacturing process Methods 0.000 claims description 21
- -1 chalcogenide compound Chemical class 0.000 claims description 17
- 239000002105 nanoparticle Substances 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 12
- 230000000903 blocking effect Effects 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 8
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 6
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- 229920000553 poly(phenylenevinylene) Polymers 0.000 claims description 6
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical group C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 229920000109 alkoxy-substituted poly(p-phenylene vinylene) Polymers 0.000 claims description 4
- 238000002048 anodisation reaction Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910003472 fullerene Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 150000004702 methyl esters Chemical class 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 229920000264 poly(3',7'-dimethyloctyloxy phenylene vinylene) Polymers 0.000 claims description 4
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 4
- 229920000642 polymer Polymers 0.000 claims description 4
- CBXRMKZFYQISIV-UHFFFAOYSA-N 1-n,1-n,1-n',1-n',2-n,2-n,2-n',2-n'-octamethylethene-1,1,2,2-tetramine Chemical group CN(C)C(N(C)C)=C(N(C)C)N(C)C CBXRMKZFYQISIV-UHFFFAOYSA-N 0.000 claims description 3
- URJIJZCEKHSLHA-UHFFFAOYSA-N 3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecane-1-thiol Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)CCS URJIJZCEKHSLHA-UHFFFAOYSA-N 0.000 claims description 3
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229920001940 conductive polymer Polymers 0.000 claims description 3
- ORTRWBYBJVGVQC-UHFFFAOYSA-N hexadecane-1-thiol Chemical compound CCCCCCCCCCCCCCCCS ORTRWBYBJVGVQC-UHFFFAOYSA-N 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- PZWLRLIAVLSBQU-UHFFFAOYSA-N 1,2-dioctyl-9h-fluorene Chemical compound C1=CC=C2C3=CC=C(CCCCCCCC)C(CCCCCCCC)=C3CC2=C1 PZWLRLIAVLSBQU-UHFFFAOYSA-N 0.000 claims description 2
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 claims description 2
- VESBOBHLCIVURF-UHFFFAOYSA-N COC(=O)CCCC1(c2ccccc2)C23c4c5c6c7c8c9c(c%10c%11c2c2c4c4c%12c5c5c6c6c8c8c%13c%14c%15c%16c%17c%18c%19c%20c%21c%22c%23c(c%14c%14c8c9c8c%10c9c%11c%10c2c(c%20c%10c%22c9c%23c%148)c4c%19c%12c%17c5c%16c6%13)C%152C(CCCC(=O)OC)(c4ccccc4)C%18%212)C137 Chemical compound COC(=O)CCCC1(c2ccccc2)C23c4c5c6c7c8c9c(c%10c%11c2c2c4c4c%12c5c5c6c6c8c8c%13c%14c%15c%16c%17c%18c%19c%20c%21c%22c%23c(c%14c%14c8c9c8c%10c9c%11c%10c2c(c%20c%10c%22c9c%23c%148)c4c%19c%12c%17c5c%16c6%13)C%152C(CCCC(=O)OC)(c4ccccc4)C%18%212)C137 VESBOBHLCIVURF-UHFFFAOYSA-N 0.000 claims description 2
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229920000280 Poly(3-octylthiophene) Polymers 0.000 claims description 2
- 229920000291 Poly(9,9-dioctylfluorene) Polymers 0.000 claims description 2
- 229910003087 TiOx Inorganic materials 0.000 claims description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021480 group 4 element Inorganic materials 0.000 claims description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
- 229920000767 polyaniline Polymers 0.000 claims description 2
- 229920000128 polypyrrole Polymers 0.000 claims description 2
- 229920000123 polythiophene Polymers 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052717 sulfur Inorganic materials 0.000 claims description 2
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- WQYWXQCOYRZFAV-UHFFFAOYSA-N 3-octylthiophene Chemical compound CCCCCCCCC=1C=CSC=1 WQYWXQCOYRZFAV-UHFFFAOYSA-N 0.000 claims 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 claims 1
- 150000002894 organic compounds Chemical class 0.000 claims 1
- 238000007743 anodising Methods 0.000 abstract description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 81
- 239000000370 acceptor Substances 0.000 description 34
- 239000000463 material Substances 0.000 description 14
- 230000008569 process Effects 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 11
- 239000010408 film Substances 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 238000000224 chemical solution deposition Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000007261 regionalization Effects 0.000 description 3
- 239000011669 selenium Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000002609 medium Substances 0.000 description 2
- 238000000813 microcontact printing Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000001338 self-assembly Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- 229910001148 Al-Li alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910000846 In alloy Inorganic materials 0.000 description 1
- 229910000799 K alloy Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- UEZVMMHDMIWARA-UHFFFAOYSA-N Metaphosphoric acid Chemical compound OP(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 230000011712 cell development Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 1
- 239000002612 dispersion medium Substances 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 238000007647 flexography Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000001989 lithium alloy Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- BITYAPCSNKJESK-UHFFFAOYSA-N potassiosodium Chemical compound [Na].[K] BITYAPCSNKJESK-UHFFFAOYSA-N 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000007764 slot die coating Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
본 발명은 금 입자들이 광활성층에서 표면 플라즈몬 공명 현상을 일으켜 광활성층에서 엑시톤의 여기를 활성화시켜 에너지 효율이 증가된 박막형 태양전지에 관한 것이다.
The present invention relates to a thin-film solar cell having increased energy efficiency by activating excitation of excitons in the photoactive layer by causing surface plasmon resonance in the photoactive layer.
최근 에너지 부족현상으로 신재생 에너지 개발이 시급. 현재 태양, 풍력, 수력 등 자연 에너지를 이용한 에너지 변환에 대한 연구가 활발히 이루어지고 있지만 효율은 아직도 미흡한 수준이다. 태양전지 개발 후 여러 농가 및 여러 사업에 사용되고 있지만 시설비용에 비해 저효율 현상으로 많은 문제점이 발생하고 있다.Recently, the development of renewable energy is urgent due to energy shortage. Currently, studies on energy conversion using natural energy such as solar, wind, and hydro are actively conducted, but the efficiency is still insufficient. After solar cell development, it has been used in various farms and businesses, but many problems occur due to low efficiency compared to facility cost.
태양전지는 태양광 에너지를 직접 전기로 변환하는 반도체소자로서 주로 실리콘이나 화합물 반도체를 이용하고 있으나, 이들은 반도체 소자 제작공정으로 제조되기 때문에 제조단가가 높으며, 또한 태양전지의 주된 부분을 차지하고 있는 실리콘 태양전지는 실리콘 원자재의 수급에 어려움을 겪고 있다. 이러한 상황에서 실리콘 소재를 전혀 사용하지 않고 저분자유기물이나 폴리머를 이용하는 유기계 태양전지가 본격 연구되기 시작하였고, 진공방식뿐만 아니라 프린팅 방식에 의해 저가공정이 가능하며, 모양에 구애받지 않는 유연 태양전지 제조가 가능하여 현재 많은 주목을 받고 있다.Solar cells use silicon or compound semiconductors mainly as semiconductor devices that directly convert solar energy into electricity. However, since they are manufactured in the semiconductor device manufacturing process, the solar cells are expensive in manufacturing, and silicon solar is a major part of solar cells. Batteries are having difficulty supplying silicon raw materials. Under these circumstances, organic solar cells using low molecular weight organic materials or polymers without using any silicon material have begun to be studied in earnest, and low cost process is possible by printing method as well as vacuum method. It is possible to receive much attention now.
통상의 유기계 태양전지는 서로 대향하는 양극과 음극 사이에 전자수용체와 정공수용체가 포함되어 있는 광활성층이 존재하며, 작동 원리는 다음과 같다. 태양전지에 광을 쬐어주면, 광은 투명기판과 양극을 거쳐 정공수용체에서 흡수되어 여기 상태의 전자-홀 쌍(엑시톤, exciton)이 형성된다. 이 전자-홀 쌍은 임의 방향으로 확산하다가 전자수용체와의 계면(interface)을 만나면 전자와 정공으로 분리된다. 즉, 전자는 전자 친화도가 큰 전자수용체 물질 쪽으로 이동하고 홀은 정공수용체 쪽에 남아 각각의 전하상태로 분리된다. 이들은 양쪽 전극의 일함수 차이로 형성된 내부 자기장과 쌓여진 전하의 농도 차에 의해 각각의 전극으로 이동 및 수집되며 최종적으로 외부 회로를 통해 전류의 형태로 흐르게 된다. 비 실리콘을 사용한 통상의 유기계 태양전지 및 인버트형 유기계 태양전지가 프린팅 방식 등이 가능하여 저가로 제조할 수 있다는 장점이 있기 때문에 많은 기관에서 활발한 개발이 진행되고 있다.Conventional organic solar cells have a photoactive layer containing an electron acceptor and a hole acceptor between the anode and the cathode facing each other, the operation principle is as follows. When the solar cell is exposed to light, the light is absorbed by the hole acceptor through the transparent substrate and the anode to form an electron-hole pair (exiton) in an excited state. The electron-hole pair diffuses in any direction, and when it encounters an interface with the electron acceptor, it is separated into electrons and holes. That is, the electrons move toward the electron acceptor material having a high electron affinity, and the holes remain on the hole acceptor side and are separated into respective charge states. They are moved and collected to each electrode by the difference in concentration between the internal magnetic field and the accumulated charge formed by the difference in the work function of both electrodes, and finally flow through the external circuit in the form of current. Conventional organic solar cells and inverted organic solar cells using non-silicon have a merit of being able to be manufactured at low cost because of the printing method and the like.
이러한 유기계 태양전지를 모듈로 제작하기 위해서는 각층을 구성하는 소재의 패턴형성을 필요로 하고 있다. 소재의 패턴방식은 레이저 스크라이빙(laser scribing) 방식과 홀 컨택 랩 쓰로우(hole contact wrap through) 방식이 알려져 있다. 또한 대표적인 정공수송층인 PEDOT:PSS의 패턴 형성은 스크린 프린팅(screen printing) 방식 및 미세접촉 프린팅(microcontact printing) 방식이 알려져 있다. 그러나 이러한 관련소재의 패턴형성 기술에 있어서 레이저 스크라이빙(laser scribing) 방식은 고가의 레이저 장비를 이용해야 할 뿐만 아니라 공정시간이 길다는 문제점이 있다. 또한 유연한 플라스틱기판을 사용하여 제작된 유기계 태양전지는 레이저에 의해 플라스틱기판도 열화될 수 있으므로 레이저 스크라이빙(laser scribing) 방식을 적용하기에 부적합하다. 또한 홀 컨택 랩 쓰로우 방식은 기판에 구멍(hole)을 뚫고 양면에 박막을 형성시켜야 하는 등의 공정이 복잡하여 신뢰성이 낮고 제조단가가 높아진다는 문제점이 있다. 또한, 정공수송층으로 널리 사용되는 PEDOT:PSS 형성에 이용되는 스크린 방식의 경우 막두께 제어가 어려운 단점이 있다. 즉 유기계 태양전지에 있어서 PEDOT:PSS는 약 수십 nm 전후의 두께를 가져야만 효율이 우수하며, 두께가 두꺼워지면 절연막에 가까운 거동을 하게 된다. 스크린 프린팅(Screen printing) 방식의 경우 수십 nm 두께의 박막을 형성하는 것이 거의 불가능한 상황이다. 미세접촉 프린팅(Micro-contact printing) 방식의 경우도 고가의 장비가 필요하며, PDMS 몰드의 제작, SAM 처리 공정 등과 같이 공정이 복잡하다는 단점이 있어서 양산공정에 적용이 어려운 상황이다.
In order to fabricate such an organic solar cell as a module, it is necessary to form patterns of materials constituting each layer. The pattern method of the material is known as a laser scribing method and a hole contact wrap through method. In addition, the pattern formation of PEDOT: PSS, which is a typical hole transport layer, is known as a screen printing method and a microcontact printing method. However, the laser scribing method in the pattern forming technology of the related material has a problem that not only has to use expensive laser equipment but also a long process time. In addition, the organic solar cell manufactured using the flexible plastic substrate is not suitable for applying a laser scribing method because the plastic substrate may also be degraded by the laser. In addition, the hole contact wrap through method has a problem in that a process such as forming holes on the substrate and forming thin films on both sides thereof is complicated, resulting in low reliability and high manufacturing cost. In addition, the screen method used for forming PEDOT: PSS, which is widely used as a hole transport layer, has a disadvantage in that film thickness control is difficult. That is, in organic solar cells, PEDOT: PSS has a thickness of about several tens of nm and is excellent in efficiency, and when the thickness is thick, the PEDOT: PSS has a behavior close to that of an insulating film. In the case of screen printing, it is almost impossible to form a thin film having a thickness of several tens of nm. In the case of the micro-contact printing method, expensive equipment is required, and it is difficult to apply to the mass production process due to the complicated process such as the manufacture of the PDMS mold and the SAM treatment process.
본 발명의 목적은 유기계 태양전지의 각층을 구성하는 소재의 패턴형성에 있어서 양극산화알루미늄을 사용하고 상기 양극산화알루미늄 상에 금 입자를 증착시켜 광활성층에 추가함으로써 에너지 효율이 높은 태양전지를 제공하는 것이다.
An object of the present invention is to provide an energy-efficient solar cell by using aluminum anodized oxide in the pattern formation of the material constituting each layer of the organic solar cell and depositing gold particles on the anodized aluminum and adding it to the photoactive layer. will be.
상기 목적을 달성하기 위하여, 본 발명은 서로 대향하는 양극 및 음극; 및In order to achieve the above object, the present invention is a positive electrode and a negative electrode facing each other; And
상기 양극과 음극 사이에 존재하는 광활성층을 포함하되, 상기 광활성층은It includes a photoactive layer existing between the anode and the cathode, the photoactive layer is
다공성 금속 산화물 박막; Porous metal oxide thin films;
상기 박막의 상단부에 형성된 금 입자층; 및A gold particle layer formed at an upper end of the thin film; And
상기 박막의 홀에 적층된 전자수용체 및 정공수용체를 포함하는 박막형 태양전지를 제공한다.
Provided is a thin-film solar cell including an electron acceptor and a hole acceptor stacked in the holes of the thin film.
본 발명은 또한The present invention also
기판 상에 음극을 형성하는 단계;Forming a cathode on the substrate;
다공성 금속 산화물 박막에 금 입자층을 증착하는 단계;Depositing a gold particle layer on the porous metal oxide thin film;
상기 단계에서 얻은 상단부에 금 입자층이 증착된 다공성 금속 산화물 박막을 상기 음극 상부에 적층하고, 상기 박막에 전자수용체 및 정공수용체를 용매에 분산시킨 각각의 용액 또는 이들의 혼합액을 도포하여 광활성층을 형성하는 단계; 및A porous metal oxide thin film having a gold particle layer deposited on the upper end obtained in the above step was laminated on the cathode, and the photoactive layer was formed by applying each solution or a mixture thereof in which the electron acceptor and the hole acceptor were dispersed in a solvent. Making; And
상기 광활성층 상부에 양극을 형성하는 단계를 포함하는 박막형 태양전지의 제조방법을 제공한다.
It provides a method of manufacturing a thin-film solar cell comprising the step of forming an anode on the photoactive layer.
본 발명은 태양전지의 저효율 문제를 개선하기 위해 광활성층에 양극산화알루미늄 상단부에 증착된 금 입자층을 추가함으로써 금과 양극산화알루미늄 사이의 표면 플라즈몬 공명 현상과 금 입자 사이에서 발생되는 산란 현상으로 활성층의 전자와 정공의 활동이 활성화되어 태양전지의 에너지 효율을 증가할 수 있다.
The present invention provides a surface plasmon resonance between gold and aluminum anodization and scattering between gold particles by adding a gold particle layer deposited on top of anodized aluminum to the photoactive layer to improve the low efficiency problem of the solar cell. The activity of electrons and holes can be activated to increase the energy efficiency of solar cells.
도 1은 본 발명의 일 구체예에 따른 박막형 태양전지의 구조를 개략적으로 도시한 도면이다.
도 2는 본 발명의 일 구체예에 따른 박막형 태양전지의 제조공정도를 간략히 나타낸 것이다.
도 3은 본 발명의 일 구체예에 따른 박막형 태양전지의 제조공정에서 다공성 금속 산화물 박막 제조 공정도를 나타낸 것이다.
도 4는 본 발명의 일 구체예에 따른 박막형 태양전지의 제조공정에서 다공성 금속 산화물 박막 상단부에 금 입자층이 형성된 구조의 SEM 단면 사진도이다.
도 5는 본 발명의 일 구체예에 따른 박막형 태양전지의 광활성층의 단면을 나타낸 SEM 사진도이다.
도 6은 본 발명의 일 구체예에 따른 박막형 태양전지의 흡수량을 나타낸 것이다.
도 7은 본 발명의 일 구체예에 따른 박막형 태양전지의 광전류량을 나타낸 것이다.1 is a view schematically showing the structure of a thin film solar cell according to an embodiment of the present invention.
Figure 2 briefly shows a manufacturing process of the thin film solar cell according to an embodiment of the present invention.
Figure 3 shows a porous metal oxide thin film manufacturing process chart in the manufacturing process of a thin film solar cell according to an embodiment of the present invention.
4 is a SEM cross-sectional view of a structure in which a gold particle layer is formed at an upper end of a porous metal oxide thin film in a manufacturing process of a thin film solar cell according to an embodiment of the present invention.
5 is a SEM photograph showing a cross section of a photoactive layer of a thin film solar cell according to an embodiment of the present invention.
Figure 6 shows the absorption of the thin-film solar cell according to an embodiment of the present invention.
Figure 7 shows the photocurrent amount of the thin-film solar cell according to an embodiment of the present invention.
이하, 첨부한 도면을 참조하여 본 발명의 구현예에 대하여 본 발명이 속하는 기술 분야에서 통상의 지식을 가진 자가 용이하게 실시할 수 있도록 상세히 설명한다. 그러나 본 발명은 여러 가지 상이한 형태로 구현될 수 있으며 여기에서 설명하는 구현예에 한정되지 않는다.DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.
이하 도 1을 참고하여 본 발명의 일 구현예에 따른 박막형 태양전지에 대하여 설명한다.Hereinafter, a thin film solar cell according to an embodiment of the present invention will be described with reference to FIG. 1.
도 1은 본 발명의 일 구현예에 따른 태양전지를 도시한 단면도로, 태양전지는 기판에 형성된 양극과 음극 사이에 위치하는 광활성층을 포함한다. 도 1에 도시된 태양전지는 기판에 음극이 접하는 구조를 도시하였으나 기판에 양극이 접하여 위치할 수도 있다.1 is a cross-sectional view showing a solar cell according to an embodiment of the present invention, the solar cell includes a photoactive layer positioned between the anode and the cathode formed on the substrate. The solar cell illustrated in FIG. 1 illustrates a structure in which a cathode is in contact with a substrate, but the anode may be in contact with the substrate.
상기 기판은 유리, 폴리카보네이트, 폴리메틸메타크릴레이트, 폴리에틸렌테레프탈레이트, 폴리이미드, 폴리에테르술폰(PES) 등의 투명 재질이면 제한 없이 사용될 수 있다.The substrate may be used without limitation as long as it is a transparent material such as glass, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyimide, polyether sulfone (PES), or the like.
상기 음극은 광 투과성 투명전극으로 광활성층으로부터 전자를 수집하는 역할(즉, 광활성층으로부터 전자를 받아들이는 역할)을 수행한다. 음극은 높은 전기전도도 특성을 가져야 하며, 광활성층과 오믹접합이 가능하고, 안정성이 우수한 물질일 수 있다. 예를 들어, ITO(indium tin oxide), SnO2, IZO(In2O3-ZnO), AZO(aluminum doped ZnO), GZO(gallium doped ZnO) 등이 사용될 수 있다.The cathode serves as a light transmitting transparent electrode to collect electrons from the photoactive layer (that is, to receive electrons from the photoactive layer). The negative electrode should have high electrical conductivity, be ohmic-bonded with the photoactive layer, and have a good stability. For example, indium tin oxide (ITO), SnO 2 , In 2 O 3 -ZnO (IZO), aluminum doped ZnO (AZO), gallium doped ZnO (GZO), or the like may be used.
상기 음극의 두께는 80 nm 내지 100 nm일 수 있으나 이에 제한되지 않는다.The thickness of the cathode may be 80 nm to 100 nm, but is not limited thereto.
상기 양극은 음극의 일 함수 보다 작은 금속, 금속 합금, 반금속(semimetal) 또는 광 투과성 투명 산화물을 사용할 수 있다. 상기 금속의 예로는 리튬(Li), 나트륨(Na) 등의 알칼리 금속; 베릴륨(Be), 마그네슘(Mg) 등의 알칼리 토금속; 알루미늄(Al); 은(Ag), 금(Au), 코발트(Co), 이리듐(Ir), 니켈(Ni), 오스뮴(Os), 팔라듐(Pd), 백금(Pt) 등의 전이금속; 희토류 원소; 셀렌(Se) 등의 반금속 등을 들 수 있다. 상기 금속 합금의 예로는 나트륨-칼륨 합금, 마그네슘-인듐 합금, 알루미늄-리튬 합금 등을 들 수 있다. 또한 상기 금속 또는 금속 합금으로 이루어진 제1층/상기 금속의 산화물 또는 할로겐화물로 이루어진 제2층의 적층체를 양극으로 사용할 수도 있다. 예를 들어 MoO3/Ag, Al2O3/Al 등의 전극도 사용 가능하다. 상기 광투과성 투명 산화물로는 상기 음극 물질로 언급된 ITO, SnO2, IZO, AZO, GZO 등이 사용가능하며, 상기 음극보다 일함수가 큰 광투과성 산화물이 사용 가능하다.The anode may use a metal, a metal alloy, a semimetal, or a light transmissive transparent oxide smaller than the work function of the cathode. Examples of the metal include alkali metals such as lithium (Li) and sodium (Na); Alkaline earth metals such as beryllium (Be) and magnesium (Mg); Aluminum (Al); Transition metals such as silver (Ag), gold (Au), cobalt (Co), iridium (Ir), nickel (Ni), osmium (Os), palladium (Pd), and platinum (Pt); Rare earth elements; Semimetals, such as selenium (Se), etc. are mentioned. Examples of the metal alloys include sodium-potassium alloys, magnesium-indium alloys, aluminum-lithium alloys, and the like. Further, a laminate of the first layer made of the metal or metal alloy / the second layer made of the oxide or halide of the metal may be used as the anode. For example, the electrode may also be used, such as MoO 3 / Ag, Al 2 O 3 / Al. As the transparent transparent oxide, ITO, SnO 2 , IZO, AZO, GZO, etc., which are referred to as the negative electrode material, may be used, and a transparent oxide having a higher work function than the negative electrode may be used.
상기 양극의 두께는 100 nm 내지 150 nm 수 있으나, 이에 특별히 제한되는 것은 아니다.The thickness of the anode may be 100 nm to 150 nm, but is not particularly limited thereto.
또한, 상기 음극 상부에는 전극개질층이 추가로 형성될 수 있다. In addition, an electrode reformed layer may be further formed on the cathode.
상기 전극개질층은 음극의 특성을 개질하는 역할을 한다. 구체적으로 음극이 p-형의 반도체 특성을 나타내는 경우, n-형의 반도체 특성을 갖는 전극개질층을 형성시킴으로써 음극의 특성을 변경시키는 역할을 한다. 만약 p-형의 음극에 곧바로 광활성층이 형성된다면, 오믹접합이 이루어지지 않아서 태양전지의 기능이 현저히 떨어질 수 있다. 따라서 광활성층 하부와 p-형 반도체 특성인 음극 사이에 n-형 반도체 특성을 갖는 전극개질층을 형성시킴으로써 오믹접촉이 가능하여 원활한 전자흐름을 유도하게 된다.The electrode reformed layer serves to modify the characteristics of the cathode. Specifically, when the cathode exhibits p-type semiconductor properties, the cathode serves to change the properties of the cathode by forming an electrode modification layer having n-type semiconductor properties. If the photoactive layer is formed directly on the p-type cathode, the ohmic junction may not be formed, and thus the function of the solar cell may be significantly degraded. Therefore, an ohmic contact is possible by forming an electrode reformed layer having n-type semiconductor properties between the photoactive layer and a cathode having p-type semiconductor properties, thereby inducing smooth electron flow.
상기 전극개질층은 TiOx(1＜x＜2), TiO2, ZnO:Al, ZnO:B, ZnO:Ga, ZnO:N, SnO2, 또는 ITO 등의 금속산화물; ZnO 계 나노입자, Doped-ZnO(ZnO:Al, ZnO:B, ZnO:Ga, ZnO:N 등)계 나노입자, SnO2 나노입자, ITO 나노입자, TiO2 나노입자 등의 금속산화물 나노입자; Cs2CO3, titanium(diisoproxide)bis(2,4-pentadionate) 등의 유기-금속화합물; CdS, ZnS, MnS, Zn(O,S), ZnSe, (Zn,In)Se, In(OH,S), 또는 In2S3 등의 n-형 특성의 칼코지나이드 화합물 나노입자; tetrakis(dimethylamino)ethylene, poly(ethylene oxide)와 같은 저분자와 고분자; hexadecanthiol, 1H,1H,2H,2H-perfluoro decanethiol 등과 같은 자기조립 단일층(self assembly monolayer)일 수 있으나 이에 제한되지 않는다.The electrode reformed layer may be formed of a metal oxide such as TiOx (1 <x <2), TiO 2 , ZnO: Al, ZnO: B, ZnO: Ga, ZnO: N, SnO 2 , or ITO; Metal oxide nanoparticles such as ZnO-based nanoparticles, Doped-ZnO (ZnO: Al, ZnO: B, ZnO: Ga, ZnO: N, etc.) based nanoparticles, SnO 2 nanoparticles, ITO nanoparticles, TiO 2 nanoparticles; Organo-metal compounds such as Cs 2 CO 3 and titanium (diisoproxide) bis (2,4-pentadionate); Chalcogenide compound nanoparticles having n-type properties such as CdS, ZnS, MnS, Zn (O, S), ZnSe, (Zn, In) Se, In (OH, S), or In 2 S 3 ; small molecules and polymers such as tetrakis (dimethylamino) ethylene and poly (ethylene oxide); It may be a self assembly monolayer such as hexadecanthiol, 1H, 1H, 2H, 2H-perfluoro decanethiol, and the like, but is not limited thereto.
상기 전극개질층의 두께는 25 nm 내지 35 nm 일 수 있으나 이에 제한되지 않는다.The thickness of the electrode reformed layer may be 25 nm to 35 nm, but is not limited thereto.
상기 전극개질층의 패턴은 음극의 좌우측 끝단을 넘어 기판에 접촉된 형태일 수 있다. The pattern of the electrode reformed layer may be in contact with the substrate beyond the left and right ends of the cathode.
또한, 상기 광활성층은 음극 상부에 금속 산화물 박막이 형성되어 있고, 상기 박막은 다공성 구조의 홀(hole)이 배열된 형태이며, 상기 박막의 상단부에는 금 입자층이 형성되어 있고, 상기 박막의 홀에는 전공수용체와 전자수용체가 혼재되어 있는 구조를 갖는다. In addition, the photoactive layer has a metal oxide thin film formed on the upper portion of the cathode, the thin film has a porous structure (hole) is arranged in the form, a gold particle layer is formed on the upper end of the thin film, the hole of the thin film It has a structure in which the major acceptor and the electron acceptor are mixed.
상기 다공성 금속 산화물 박막은 Al2O3, ZrO3, 또는 TiO2로 구성될 수 있다.The porous metal oxide thin film may be composed of Al 2 O 3 , ZrO 3 , or TiO 2 .
상기 박막은 홀의 직경이 75 nm 내지 85 nm이고, 홀 사이의 간격이 10 nm 내지 20 nm일 수 있다.The thin film may have a diameter of 75 nm to 85 nm, and a gap between the holes may be 10 nm to 20 nm.
상기 금 입자층은 박막의 상단부에 하나 이상의 금 입자가 적층되어 있는 형태이며, 상기 금 입자층을 형성하는 금 입자의 두께(직경)은 5 nm 내지 15 nm일 수 있다.The gold particle layer is a form in which one or more gold particles are stacked on the upper end of the thin film, and the thickness (diameter) of the gold particles forming the gold particle layer may be 5 nm to 15 nm.
상기 전자수용체로는 전자 친화도가 큰 플러렌(fullerene, C60, C70, C74, C76, C78, C82, C84, C720, C860 등); (6,6)-페닐-C61-부티릭에시드 메틸에스테르[(6,6)-phenyl-C61-butyric acid methyl ester, PCBM], (6,6)-페닐-C71-부티릭에시드 메틸에스테르[(6,6)-phenyl-C71-butyric acid methyl ester, C70-PCBM], C71-PCBM, C84-PCBM, (6,6)-티에닐-C61-부티릭에시드 메틸에스테르[(6,6)-thienyl-C61-butyric acid methyl ester; ThCBM], bis-PCBM 등과 같은 플러렌 유도체들; 페릴렌(perylene); CdS, CdTe, CdSe, ZnO 등과 같은 무기 반도체; 또는 이들의 혼합물을 사용할 수 있다.Examples of the electron acceptor include fullerene having a high electron affinity (fullerene, C60, C70, C74, C76, C78, C82, C84, C720, C860, etc.); (6,6) -phenyl -C 61 - butyric rigs Acid methyl ester [(6,6) -phenyl-C 61 -butyric acid methyl ester, PCBM], (6,6) - 71 -C-phenyl-butyric Acid Rick Methyl ester [(6,6) -phenyl-C 71 -butyric acid methyl ester, C 70 -PCBM], C 71 -PCBM, C 84 -PCBM, (6,6) -thienyl-C61-butyric acid methyl Ester [(6,6) -thienyl-C 61 -butyric acid methyl ester; Fullerene derivatives such as ThCBM], bis-PCBM and the like; Perylene; Inorganic semiconductors such as CdS, CdTe, CdSe, ZnO, and the like; Or mixtures thereof.
상기 정공수용체는 p-형 반도체로서, 전도성 고분자, 저분자 반도체 등이 사용될 수 있다. 이들의 구체적인 예로는 폴리-3-헥실티오펜[poly-3-hexylthiophene, P3HT], 폴리-3-폴리-3-옥틸티오펜[poly-3-octylthiophene, P3OT], 폴리파라페닐렌비닐렌[poly-p-phenylenevinylene, PPV], 폴리(디옥틸플루오렌)[poly(9,9'-dioctylfluorene)], 폴리(2-메톡시,5-(2-에틸-헥실옥시)-1,4-페닐렌비닐렌)[poly(2-methoxy,5-(2-ethyle-hexyloxy)-1,4-phenylenevinylene, MEH-PPV], 폴리(2-메틸,5-(3',7'-디메틸옥틸옥시))-1,4-페닐렌비닐렌[poly(2-methyl,5-(3',7'-dimethyloctyloxy))-1,4-phenylene vinylene, MDMO-PPV] 및 이들의 혼합물 등이 있다.The hole acceptor may be a p-type semiconductor, and a conductive polymer, a low molecular semiconductor, or the like may be used. Specific examples thereof include poly-3-hexylthiophene, P 3 HT, poly-3-poly-3-octylthiophene, P3OT, polyparaphenylene vinyl Ethylene [poly-p-phenylenevinylene, PPV], poly (dioctylfluorene) [poly (9,9'-dioctylfluorene)], poly (2-methoxy, 5- (2-ethyl-hexyloxy) -1 , 4-phenylenevinylene) [poly (2-methoxy, 5- (2-ethyle-hexyloxy) -1,4-phenylenevinylene, MEH-PPV], poly (2-methyl, 5- (3 ', 7' -Dimethyloctyloxy))-1,4-phenylenevinylene [poly (2-methyl, 5- (3 ', 7'-dimethyloctyloxy))-1,4-phenylene vinylene, MDMO-PPV] and mixtures thereof Etc.
상기 전자수용체 및 정공수용체는 5:5 내지 6:4의 중량비로 사용될 수 있다. 상기 범위로 사용할 경우 광전류 효율을 개선하기 위한 광활성층을 용이하게 제작할 수 있다.The electron acceptor and the hole acceptor may be used in a weight ratio of 5: 5 to 6: 4. When used in the above range it can be easily produced a photoactive layer for improving the photocurrent efficiency.
광 여기에 의하여 정공수용체에서 전자와 정공의 쌍인 엑시톤이 형성되고 이 엑시톤은 정공수용체와 전자수용체의 계면에서 두 물질의 전자 친화도의 차이에 의하여 전자와 정공으로 분리된다. 분리된 전자는 내부 전계(built-in electric field)에 의하여 전자수용체를 통하여 음극으로 이동하고 정공은 정공수용체를 통하여 양극으로 이동한다. 상기 전자는 전자수용체들을 호핑(hopping)하여 이동하는데 이 경우 전자의 이동 속도가 낮아 광전류량이 제한을 받게 된다.Photo excitation forms an exciton, a pair of electrons and holes in the hole acceptor, and the exciton is separated into electrons and holes by the difference in electron affinity between the two materials at the interface between the hole acceptor and the electron acceptor. The separated electrons move to the cathode through the electron acceptor by the built-in electric field and the holes move to the anode through the hole receptor. The electrons move by hopping the electron acceptors, and in this case, the movement speed of the electrons is low, thereby limiting the amount of photocurrent.
따라서 본 발명은 금 입자를 광활성층에 도입하여 금 입자와 다공성 금속 산화물 박막 사이의 표면 플라즈몬 공명 현상을 일으키고, 금 입자 사이에서 발생되는 산란 현상을 통해 활성층의 전자와 정공(엑시톤)의 여기를 활성화시켜 에너지 효율을 증가시킬 수 있다.Accordingly, the present invention introduces gold particles into the photoactive layer to cause surface plasmon resonance between the gold particles and the porous metal oxide thin film, and activates excitation of electrons and holes (excitons) in the active layer through scattering phenomenon generated between the gold particles. To increase energy efficiency.
상기 표면 플라즈몬(surface plasmons, SPs)은 표면 플라즈몬 폴라리톤(surface plasmon polaritons, SPPs) 또는 플라즈몬 표면 폴라 리톤(plasmon surface polaritons, PSPs)이라고도 불린다. 표면 플 라즈몬은 일반적으로 음의 유전 함수(dielectric function, ε'<0)를 갖는 금속과 양(ε'>0)의 그것을 갖는 매체의 계면을 따라 전파하는 전도대(conduction band) 전자들의 집단적인 진동(collective oscillation) 현상을 말하며, 빛(보다 구체적으로 전자기파)과의 상호작용의 결과 여기(excitation)되어 입사하는 빛보다 증강된 크기를 갖고 계면에서 수직 방향으로 멀어질수록 지수적으로 감소하는 소멸파(evanescent wave)의 성질과 형태를 갖게 된다. 즉, ‘표면 플라즈몬 공명(surface plasmon resonance, SPR)’ 현상은 빛(photon)과 나노 크기의 귀금속(noble metal) 간의 상호작용의 결과로써 야기되고 관찰되는 독특한 현상이라고 정의할 수 있다.The surface plasmons (SPs) are also called surface plasmon polaritons (SPPs) or plasmon surface polaritons (PSPs). Surface plasmons are generally a group of conduction band electrons that propagate along the interface of a metal with a negative dielectric function ε '<0 and a medium with a positive ε'> 0. It refers to the phenomenon of collective oscillation, which has an increased magnitude than the incident light due to the interaction with light (more specifically, electromagnetic waves) and disappears exponentially as it moves away from the interface in the vertical direction. It has the nature and shape of a evanescent wave. In other words, the 'surface plasmon resonance' (SPR) phenomenon can be defined as a unique phenomenon caused and observed as a result of the interaction between photon and nanoscale noble metal.
그러므로, 본 발명의 태양전지는 기존의 태양전지와 비교하여 광전류량이 증가하고, 다공성 금속 산화물 박막을 이용함으로써 균일하게 금 입자층이 위치하면서 균일한 플라즈몬 효과를 기대할 수 있다.Therefore, the solar cell of the present invention increases the amount of photocurrent compared to the conventional solar cell, by using a porous metal oxide thin film can be expected to have a uniform plasmon effect while the gold particle layer is uniformly positioned.
상기 광활성층은 8 ㎛ 내지 10 ㎛로 형성되는 것이 광전 변환 효율면에서 좋다.The photoactive layer is preferably formed in the range of 8 to 10 ㎛ in terms of photoelectric conversion efficiency.
또한, 본 발명의 태양전지는 전기적 단락을 방지하며, 전자가 양극으로 이동하는 것을 막기 위해 상기 광활성층 상부에 전자차단층을 추가로 포함할 수 있다.In addition, the solar cell of the present invention may further include an electron blocking layer on top of the photoactive layer to prevent electrical short-circuit and to prevent electrons from moving to the anode.
상기 전자차단층은 밴드갭이 높아 전자가 양극으로 이동하는 것을 막아줄 수 있는 물질이라면 제한 없이 사용할 수 있다. 예를 들어, MoO2, V2O5, WO3 등의 전이금속 산화물; PEDOT:PSS, 폴리아닐린, 폴리피롤, 폴리(p-페닐렌비닐렌), MEH-PPV(poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene), MDMO-PPV(poly(2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene-vinylene), 폴리(3-알킬티오펜), 폴리티오펜 등의 전도성 폴리머; 펜타센; CuPc; 또는 트리페닐디아민 유도체(TPD) 등의 저분자 유기물을 포함할 수 있다.The electron blocking layer may be used without limitation as long as it has a high band gap and may prevent electrons from moving to the anode. For example, transition metal oxides such as MoO 2, V 2 O 5, WO 3; PEDOT: PSS, polyaniline, polypyrrole, poly (p-phenylenevinylene), MEH-PPV (poly [2-methoxy-5- (2'-ethyl-hexyloxy) -1,4-phenylenevinylene), MDMO-PPV ( conductive polymers such as poly (2-methoxy-5- (3,7-dimethyloctyloxy) -1,4-phenylene-vinylene), poly (3-alkylthiophene), polythiophene; pentacene; CuPc; or triphenyl Low molecular weight organic materials, such as a diamine derivative (TPD), can be included.
상기 전자차단층의 두께는 15 nm 내지 20 nm일 수 있으나, 이에 특별히 제한하는 것은 아니다.
The thickness of the electron blocking layer may be 15 nm to 20 nm, but is not particularly limited thereto.
본 발명은 또한 The present invention also
기판 상에 음극을 형성하는 단계;Forming a cathode on the substrate;
다공성 금속 산화물 박막에 금 입자층을 증착하는 단계;Depositing a gold particle layer on the porous metal oxide thin film;
상기 단계에서 얻은 상단부에 금 입자층이 증착된 다공성 금속 산화물 박막을 상기 음극 상부에 적층하고, 상기 박막에 전자수용체 및 정공수용체를 용매에 분산시킨 각각의 용액 또는 이들의 혼합액을 도포하여 광활성층을 형성하는 단계; 및A porous metal oxide thin film having a gold particle layer deposited on the upper end obtained in the above step was laminated on the cathode, and the photoactive layer was formed by applying each solution or a mixture thereof in which the electron acceptor and the hole acceptor were dispersed in a solvent. Making; And
상기 광활성층 상부에 양극을 형성하는 단계를 포함하는 박막형 태양전지의 제조방법에 관한 것이다.It relates to a method for manufacturing a thin film solar cell comprising forming an anode on the photoactive layer.
본 발명의 박막형 태양전지의 제조방법은 도 2 및 3을 참조하여 구체적으로 설명한다.The manufacturing method of the thin film solar cell of the present invention will be described in detail with reference to FIGS. 2 and 3.
먼저 기판을 준비하는 단계로서, 기판은 투명한 재질이라면 제한 없이 사용할 수 있고, 종류는 전술한 바와 같다. 상기 기판은 사용 직전에 세정공정을 거치며, 아세톤, 알코올, 물 혹은 이들의 혼합 용액에 담근 후 초음파 세정을 실시할 수 있다.First, as a step of preparing a substrate, the substrate can be used without limitation as long as it is a transparent material, the kind is as described above. The substrate undergoes a cleaning process immediately before use, and may be ultrasonically cleaned after soaking in acetone, alcohol, water, or a mixed solution thereof.
상기 기판 상에 음극을 형성하며, 음극은 전기전도성을 가지면서 투명한 물질이면 모두 가능하며 종류는 전술한 바와 같다.The cathode is formed on the substrate, and the cathode may be any conductive material having electrical conductivity, and the kind thereof is as described above.
상기 음극은 DC 스퍼터링 방식 또는 이와 달리 화학적 증착법(CVD), 원자층 증착(ALD), 졸겔 코팅(solgel coating), 전기도금 등에 의해 형성될 수 있다. 이러한 음극의 두께는 80 nm 내지 100 nm일 수 있으나 이에 제한되지 않는다. 이렇게 형성된 양극의 패턴은 종래 반도체 및 디스플레이 산업에서 적용된 방식을 이용하여 형성할 수 있다.The cathode may be formed by DC sputtering or otherwise by chemical vapor deposition (CVD), atomic layer deposition (ALD), solgel coating, electroplating, or the like. The thickness of the cathode may be 80 nm to 100 nm, but is not limited thereto. The pattern of the anode thus formed may be formed using a method applied in the conventional semiconductor and display industries.
본 발명이 태양전지의 제조방법에 있어서, 상기 음극 상부에 전극개질층을 형성하는 단계를 더 포함할 수 있다. In the method of manufacturing a solar cell of the present invention, the method may further include forming an electrode reformed layer on the cathode.
상기 전극개질층은 금속 전구체 용액을 이용하여 잉크젯방식, 오프셋 인쇄방식, 그라비아 인쇄방식 등으로 패턴을 형성시킬 수 있다. 또한 금속산화물 나노입자 및 n-형 특성의 칼코지나이드 화합물 나노입자를 제조하고 이를 분산매질에 첨가제와 함께 분산시켜 잉크, 슬러리, 페이스트 등의 형태로 제조하여 상기 제시된 인쇄방식으로 패턴을 형성시킬 수 있다. 상기 금속산화물의 종류는 전술한 바와 같다. 또한, 유기계 전극개질층도 적용될 수 있으며, tetrakis(dimethylamino)ethylene, poly(ethylene oxide)와 같은 저분자와 고분자 및 hexadecanthiol, 1H,1H,2H,2H-perfluoro decanethiol 등과 같은 자기조립 단일층(self assembly monolayer)일 수 있으나 이에 제한되지 않는다.The electrode reformed layer may be formed using a metal precursor solution by inkjet printing, offset printing, gravure printing, or the like. In addition, metal oxide nanoparticles and chalcogenide compound nanoparticles having n-type characteristics may be prepared and dispersed in an dispersion medium with additives to form a pattern by ink, slurry, paste, and the like to form a pattern by the printing method described above. have. The type of the metal oxide is as described above. In addition, an organic electrode reforming layer may be applied, and may be a low-molecule polymer such as tetrakis (dimethylamino) ethylene, poly (ethylene oxide) and a self assembly monolayer such as hexadecanthiol, 1H, 1H, 2H, 2H-perfluoro decanethiol, etc. ), But is not limited thereto.
금속산화물 및 n-형 특성의 칼코지나이드 화합물은 앞서 제시된 인쇄방식 이외에도 진공장비에 쉐도우 마스크(shadow mask)를 장착하여 패턴을 형성할 수도 있다. 특히 칼코지나이드 화합물의 경우는 화학욕증착(chemical bath deposition) 방식이나 ILGAR(ion layer gas reaction) 방식이 적용될 수도 있다. 이 경우에는 포토레지스트(photoresist) 등을 이용하여 전극개질층이 형성될 부분을 제외하고는 보호막을 형성시킨 후 상기와 같은 화학욕증착방식으로 박막패턴을 형성시키며, 이어서 보호막을 제거함으로써 전극개질층 패턴형성이 가능하다. 이러한 보호막은 화학욕증착과정에서 불필요한 부분에 박막형성이 진행되지 않도록 하기 위한 것이다.The metal oxide and n-type chalcogenide compound may form a pattern by attaching a shadow mask to a vacuum device in addition to the printing method described above. In particular, in the case of chalcogenide compounds, a chemical bath deposition method or an ion layer gas reaction (ILGAR) method may be applied. In this case, except for the portion where the electrode reformed layer is to be formed using a photoresist or the like, a protective film is formed, and a thin film pattern is formed by the chemical bath deposition as described above, and then the electrode reformed layer is removed by removing the protective film. Pattern formation is possible. Such a protective film is intended to prevent the formation of a thin film in an unnecessary portion in the chemical bath deposition process.
상기 전극개질층의 두께는 25 nm 내지 35 nm일 수 있으나 이에 제한되지 않는다.The thickness of the electrode reformed layer may be 25 nm to 35 nm, but is not limited thereto.
상기 전극개질층의 패턴은 음극의 좌우측 끝단을 넘어 기판에 접촉된 형태로 형성시킬 수도 있다. 이는 인쇄공정에 적용되는 마스크의 선폭을 달리하거나, 진공공정에 적용되는 쉐도우 마스크(shadow mask)의 선폭을 달리하거나 화학욕증착공정에 적용되는 보호막 패턴의 크기를 제어함으로써 가능하다.
The pattern of the electrode reformed layer may be formed to be in contact with the substrate beyond the left and right ends of the cathode. This is possible by varying the line width of the mask applied to the printing process, changing the line width of the shadow mask applied to the vacuum process, or controlling the size of the protective film pattern applied to the chemical bath deposition process.
다음 단계로, 다공성 금속 산화물 박막 상에 금 입자층을 형성하는 단계이다. The next step is to form a gold particle layer on the porous metal oxide thin film.
상기 다공성 금속 산화물 박막은 기판 상에 금속 물질, 예를 들어, 주기율표에서 4족 원소인 알루미늄, 지르코늄, 티타늄 등의 금속물질을 증착하여 금속막을 형성하여 제조될 수 있다.The porous metal oxide thin film may be manufactured by depositing a metal material on a substrate, for example, a metal film by depositing a metal material such as aluminum, zirconium, and titanium, which are Group 4 elements in the periodic table.
상기 증착방법은 스퍼터링 방식, 전자선 증착(e-beam evaporator), 열 증착(thermal evaporator) 방법 등이 있다.The deposition method includes a sputtering method, an e-beam evaporator, a thermal evaporator method, and the like.
상기 다공성 금속 산화물 박막으로 양극산화알루미늄(AAO, Anodizing Aluminum Oxide)을 사용하는 경우 다음의 단계를 거쳐 제조할 수 있다.When using anodizing aluminum oxide (AAO) as the porous metal oxide thin film may be prepared through the following steps.
우선, 기판 위에 하면전극(bottom electrode)으로 사용될 Au, Pt와 같은 금속 전극을 증착한다. First, a metal electrode such as Au or Pt to be used as a bottom electrode is deposited on a substrate.
전극 위에 Al을 리소그래피(lithography) 방법과 리프트-오프(lift-off) 방법을 이용하여 패터닝한 후 증착한다.Al is deposited on the electrode by patterning using a lithography method and a lift-off method.
레지스트(resist)를 이용하여 AAO를 만들고자 하는 부분만 전해질 용액에 노출될 수 있도록 다른 부분을 패시베이션(passivation)한 후 양극산화한다. 상기 양극산화는 양극산화용 전해질로 인산(phosphoric acid), 크롬산(chromic acid), 옥살산(oxalic acid), 붕산(boric acid), 황산(sulfuric acid) 등의 산 용액을 사용하여 전압을 걸어 실시한다. The resist is anodized after passivation of the other part so that only the part to make AAO can be exposed to the electrolyte solution. The anodic oxidation is carried out by applying a voltage using an acid solution such as phosphoric acid, chromic acid, oxalic acid, boric acid, and sulfuric acid as an anodizing electrolyte. .
상기 양극산화를 수행한 후 다공성 구조(pore)가 형성되며, 양극산화 후에는 AAO 끝부분에 알루미나(Al2O3) 장벽(barrier)이 형성되는데 이를 제거하기 위해 상온에서 제작된 AAO 주형을 아세톤 등의 유기용매에 30 분 내지 40 분 동안 침지한 후 증류수 및 아세톤의 혼합용액에서 침지하는 방법으로 장벽을 제거한다. After the anodization, a porous structure is formed, and after anodization, an alumina (Al 2 O 3 ) barrier is formed at the end of AAO, and the AAO template manufactured at room temperature to remove it is acetone. The barrier is removed by dipping in an organic solvent such as 30 minutes to 40 minutes and then immersing in a mixed solution of distilled water and acetone.
상기 단계를 거쳐 알루미늄 금속막은 규칙적으로 다공성 구조의 홀(hole)이 배열 형성되는 알루미늄 산화물 박막으로 되며, 상기 홀의 직경은 75 nm 내지 85 nm이고, 각 홀 사이의 간격은 10 nm 내지 20 nm일 수 있다. Through the above steps, the aluminum metal film is an aluminum oxide thin film in which holes of a porous structure are regularly arranged, and the diameters of the holes are 75 nm to 85 nm, and the intervals between the holes may be 10 nm to 20 nm. have.
상기 다공성 금속 산화물 박막을 주형으로 하여 금 입자를 증착시킨다.Gold particles are deposited using the porous metal oxide thin film as a template.
상기 금 입자의 증착방법은 열 증착(thermal evaporator)을 사용할 수 있으나, 이에 특별히 제한하는 것은 아니다. The deposition method of the gold particles may use a thermal evaporator, but is not particularly limited thereto.
상기 금 입자는 박막형태로 증착되고 이를 입자로 만들기 위해 또 한번의 열처리 과정을 거치게 된다. The gold particles are deposited in a thin film form and subjected to another heat treatment process to make them into particles.
상기 열처리 과정은 CVD 방법으로 200 내지 500℃에서 0.5 내지 3시간 동안 실시할 수 있으나, 이에 특별히 제한하는 것은 아니다.The heat treatment process may be carried out for 0.5 to 3 hours at 200 to 500 ℃ by CVD method, but is not particularly limited thereto.
상기 금 입자는 박막형태에서 구 형태로 변형되며, 크기는 5 nm 내지 15 nm이다.
The gold particles deform from a thin film into a spherical shape, and the size is 5 nm to 15 nm.
다음으로, 상기 상단부에 금 입자층이 형성된 다공성 금속 산화물 박막을 기판에서 제거하여 상기 음극의 상부에 적층한다.Next, the porous metal oxide thin film having the gold particle layer formed on the upper end is removed from the substrate and stacked on the upper portion of the cathode.
다공성 금속 산화물 박막 아래에 남아 있는 알루미늄을 제거하기 위해 염화구리(copper chloride: CuCl2)를 증류수에 희석시킨 염화구리 용액, 바람직하게는 약 0.1M의 염화구리 용액과 약 37 중량%의 염산 용액을 4:1의 부피비로 섞은 용액에 10 내지 15 시간 동안 침지시켜 제거한다.Copper chloride (CuCl 2 ) diluted in distilled water to remove aluminum remaining under the porous metal oxide thin film, preferably about 0.1M copper chloride solution and about 37% by weight hydrochloric acid solution It is removed by dipping for 10 to 15 hours in a solution mixed in a volume ratio of 4: 1.
상기 알루미늄이 제거된 다공성 금속 산화 박막은 증류수에 희석시켜 제조한 0.45M 내지 0.55M의 인산 용액에 넣어 아래 면도 다공성이 되도록 만들어 준다.
The porous metal oxide thin film from which the aluminum is removed is made into 0.45M to 0.55M phosphoric acid solution prepared by diluting in distilled water so as to be porous under shaving.
다음으로, 상기 다공성 박막 상에 전자수용체 및 정공수용체를 적정비율로 용매에 분산시킨 각각의 용액 또는 이들의 혼합액을 도포한다. Next, each solution or a mixture thereof in which the electron acceptor and the hole acceptor are dispersed in a solvent at an appropriate ratio is applied onto the porous thin film.
상기 전자수용체 및 정공수용체를 용매에 분산시킨 각각의 용액 또는 혼합액의 도포공정은 혼합액의 점성에 따라 스프레이 코팅법, 침지법, 리버스롤법, 다이렉트롤법, 스크린 프린팅법, 스핀 코팅법, 닥터 블레이드를 이용한 코팅법, 그라비어 코팅법, 페인팅법, 슬롯 다이 코팅법 등으로 이루어진 군에서 선택된 방법으로 실시될 수 있으며, 이에 한정되는 것은 아니다.The application process of each solution or mixed solution in which the electron acceptor and the hole acceptor are dispersed in a solvent is spray coating, dipping, reverse roll, direct roll, screen printing, spin coating, or a doctor blade depending on the viscosity of the mixed solution. The coating method, the gravure coating method, the painting method, the slot die coating method may be performed by a method selected from the group consisting of, but is not limited thereto.
또한 p-형 유기반도체 물질이 저분자 유기물인 경우는 용매에 용해시키지 않고 진공 하에서 열증착에 의해 형성시킬 수도 있다. In addition, when the p-type organic semiconductor material is a low molecular organic material, it may be formed by thermal evaporation under vacuum without dissolving in a solvent.
코팅된 박막은 용매를 제거하기 위한 건조(진공증착 박막의 경우는 필요 없음) 단계를 거친 후 광활성층을 형성한다. The coated thin film is subjected to a drying step for removing the solvent (not necessary for the vacuum deposition thin film) to form a photoactive layer.
상기 광활성층은 다양한 형태로 구현이 가능한데, (1) 정공수용체(D) 물질과 전자수용체(A) 물질의 혼합박막[(D+A) blend]층의 1층 구조를 취할 수 있으며, (2) 정공수용체(D) 물질과 전자수용체(A) 물질이 각각 적층된 형태(D/A)의 2층 구조를 취할 수도 있다.The photoactive layer may be embodied in various forms. (1) It may take a one-layer structure of a mixed thin film ((D + A) blend] layer of a hole acceptor (D) material and an electron acceptor (A) material, and (2 ) The two-layer structure of the hole acceptor (D) material and the electron acceptor (A) material may be in a stacked form (D / A).
상기 혼합박막 형태로 구현할 경우, 전자수용체 및 정공수용체는 5:5 내지 6:4의 중량비로 혼합한 혼합액을 다공성 금속 산화물 박막에 코팅하여 제조한다.
When implemented in the form of the mixed thin film, the electron acceptor and the hole acceptor are prepared by coating a mixed solution mixed in a weight ratio of 5: 5 to 6: 4 on the porous metal oxide thin film.
상기 광활성층 위에 양극을 위치시켜 태양전지를 제작한다.A solar cell is manufactured by placing an anode on the photoactive layer.
상기 양극은 DC 스퍼터링방식, 열증착 또는 이와 달리 화학적 증착법(CVD), 원자층 증착(ALD), 전기도금 및 각종 프린팅기술과 같은 습식방식 등에 의해 형성될 수 있다. 진공방식에 의한 양극의 패턴은 쉐도우 마스크(shadow mask)를 이용할 수 있으며, 습식방식의 경우 스크린 마스크(screen mask)를 이용할 수 있다.The anode may be formed by DC sputtering, thermal evaporation or alternatively by wet such as chemical vapor deposition (CVD), atomic layer deposition (ALD), electroplating and various printing techniques. The pattern of the anode by the vacuum method may use a shadow mask, and in the case of the wet method, a screen mask may be used.
상기 광활성층 위에 양극을 형성하기 전에 전자차단층을 더 형성하여 전기적 단락을 방지하며, 전자가 양극으로 이동하는 것을 막아 준다.Before forming an anode on the photoactive layer, an electron blocking layer is further formed to prevent an electrical short circuit and prevent electrons from moving to the anode.
상기 전자차단층은 산화 몰리브뎀(Molybdenum Oxide - MoO2)을 열 증착(thermal evaporator)을 사용하여 형성할 수 있으나, 이에 특별히 제한하는 것은 아니다.The electron blocking layer may form molybdenum oxide (Molybdenum Oxide-MoO 2 ) using a thermal evaporator, but is not particularly limited thereto.
상기 전자차단층의 두께는 15 nm 내지 20 nm일 수 있으나, 이에 특별히 제한하는 것은 아니다.The thickness of the electron blocking layer may be 15 nm to 20 nm, but is not particularly limited thereto.
본 발명의 박막형 태양전지의 제조방법에 있어서, 각 층의 제조방법은 진공방식이 적용되어도 되며, 습식방식이 적용될 수 있다. 진공방식이라 함은 진공챔버(vacuum chamber) 내에서 해당되는 단위 박막 혹은 박막패턴의 형성을 의미하며 각 층의 종류에 따라 열증착, 스퍼트증착, CVD(chemical vapor deposition), 전자빔 증착 등이 적용될 수 있다. 또한 습식방식이라 함은 해당되는 소재를 액상의 매질에 용해시키거나 분산시킨 후 잉크젯프린팅, 스크린프린팅, 그라비아(gravure)프린팅, 플렉소그라피(flexography), 닥터블레이드(doctor blade)코팅 방식, 전기도금 방식, 전기영동방식, 화학욕증착 등으로 박막을 형성하는 것을 의미한다.
In the method of manufacturing the thin film solar cell of the present invention, the method of manufacturing each layer may be a vacuum method, a wet method may be applied. The vacuum method refers to the formation of a unit thin film or a thin film pattern in a vacuum chamber, and thermal deposition, sputter deposition, chemical vapor deposition (CVD), and electron beam deposition may be applied according to the type of each layer. have. In addition, the wet method refers to ink jet printing, screen printing, gravure printing, flexography, doctor blade coating, electroplating after dissolving or dispersing a corresponding material in a liquid medium. It means the formation of a thin film by the method, electrophoresis method, chemical bath deposition.
본 발명의 단순한 변형 또는 변경은 모두 이 분야의 통상의 지식을 가진 자에 의하여 용이하게 실시될 수 있으며 이러한 변형이나 변경은 모두 본 발명의 영역에 포함되는 것으로 볼 수 있다.
All simple modifications or changes of the present invention can be easily carried out by those skilled in the art, and all such modifications or changes can be seen to be included in the scope of the present invention.
<실시예 1> 다공성 박막 상에 금 입자층이 적층된 구조의 태양전지 Example 1 A solar cell having a gold particle layer laminated on a porous thin film
도 1에 도시된 다공성 박막 상에 금 입자층이 적층된 구조의 태양전지의 제조공정은 도 2 및 3에 간략하게 도시하였다. A manufacturing process of a solar cell having a gold particle layer stacked on a porous thin film shown in FIG. 1 is briefly illustrated in FIGS. 2 and 3.
구체적으로 설명하면, 알루미늄 기판에 AAO를 제작하고, 제작된 AAO에 금을 열증착기(thermal evaporator)로 고진공 분위기에서 20nm 증착시켰다. 그리고 열처리 CVD 장비를 이용하여 300℃에서 1시간 가량 열처리해주어 금 나노입자를 형성시켰다.Specifically, AAO was fabricated on an aluminum substrate, and gold was deposited on the produced AAO in a high vacuum atmosphere using a thermal evaporator. And heat treatment at 300 ℃ for 1 hour using a heat treatment CVD equipment to form gold nanoparticles.
이를 0.1M 염화구리 용액 및 37 중량%의 염산 용액을 4:1의 부피비로 섞은 혼합용액에 12시간 가량 넣어 알루미늄을 제거한 후 0.5M 인산 용액에 30분 가량 담궈 아래 위 모두 다공성의 산화금속박막을 얻었다(이때 위 부분에는 금 입자, 아래에는 다공성의 AAO가 형성되어 있음). This was added to a mixed solution of 0.1 M copper chloride solution and 37 wt% hydrochloric acid solution in a volume ratio of 4: 1 for 12 hours to remove aluminum, and then immersed in 0.5 M phosphoric acid solution for about 30 minutes to form a porous metal oxide film above and below. (Gold particles were formed in the upper part and porous AAO was formed in the lower part).
인듐주석 산화물(indiumtinoxide, ITO)이 도포된 유리기판을 아세톤과 알코올로 초음파 세척기를 이용하여 세척한 다음, 산소 플라즈마 처리장치(Harrick Plasma사 PDC-32G)를 이용하여 산소 분위기에서 플라즈마를 발생시켜 표면의 유기물을 제거하고, 인듐주석 산화물 표면에 하이드록시기를 만들어주어 표면을 친수성으로 만들었다. The glass substrate coated with indium tin oxide (ITO) was washed with acetone and alcohol using an ultrasonic cleaner, and then plasma was generated in an oxygen atmosphere using an oxygen plasma treatment apparatus (PDC-32G, Harrick Plasma). The organic substance of was removed and the surface was made hydrophilic by making a hydroxyl group on the surface of indium tin oxide.
다음으로, ITO가 증착된 유리 기판에 ZnO를 증착하고 그 위에 상기 금 입자가 형성된 AAO를 옮겼다. Next, ZnO was deposited on a glass substrate on which ITO was deposited, and then AAO on which the gold particles were formed was transferred.
정공수용체 물질인 폴리-3-헥실티오펜[poly-3-hexylthiophene, P3HT] 30mg과 전자수용체 물질인 PCBM 21mg을 디클로로벤젠(dicholrobenzene) 2mL로 용해시켜 혼합물을 제조한 다음, 상기 혼합물을 질소가 충진된 글로브 박스내에서 스핀코팅으로 다공성 금속 산화물 박막에 도포하였다. 도포된 상기 혼합물의 용매가 완전히 증발시켜 광활성층을 제조하였다.A mixture was prepared by dissolving 30 mg of poly-3-hexylthiophene (P3HT), a hole receptor material, and 21 mg of PCBM, an electron acceptor material, in 2 mL of dichlororobenzene, to prepare a mixture. It was applied to the porous metal oxide thin film by spin coating in the glove box. The solvent of the applied mixture was completely evaporated to prepare a photoactive layer.
전자차단층으로 산화 몰리브뎀 (Molybdenum Oxide - MoO2)를 20nm 두께로 상기 광활성층 상부에 진공증착한 다음, 양극 전극으로서 은을 150nm 두께로 진공증착시키고, 150℃에서 10분 동안 열처리하여 태양전지를 제조하였다.
Molybdenum oxide (MoO 2 ) was deposited on the photoactive layer by vacuum deposition on the photoactive layer with an electron blocking layer, and then, silver was vacuum deposited to a thickness of 150 nm as an anode electrode, and heat-treated at 150 ° C. for 10 minutes. The battery was prepared.
<비교예 1> 다공성 박막 상에 금 입자가 적층되지 않은 구조의 태양전지Comparative Example 1 A solar cell having no structure in which gold particles were not stacked on a porous thin film
다공성 금속 산화물 박막 상에 금 입자를 증착하지 않는 점을 제외하고, 상기 실시예 1에 준하는 방식으로 태양전지를 제조하였다.
A solar cell was manufactured in the same manner as in Example 1, except that gold particles were not deposited on the porous metal oxide thin film.
<비교예 2> 다공성 박막 상에 금 박막이 적층된 구조의 태양전지Comparative Example 2 A solar cell having a gold thin film laminated on a porous thin film
다공성 금속 산화물 박막 상에 금 박막이 증착된 상태에서 추가 열처리를 하지 않은 점을 제외하고, 상기 실시예 1에 준하는 방식으로 태양전지를 제조하였다.
A solar cell was manufactured in the same manner as in Example 1, except that the heat treatment was not performed while the gold thin film was deposited on the porous metal oxide thin film.
<실험예 1> 태양전지의 특성 비교Experimental Example 1 Comparison of Characteristics of Solar Cell
실시예 1과 비교예 1 및 2에서 각각 제조된 태양전지를 태양모사장치(solar simulator)(Newport 사 66984)를 이용하여 전류-전압 특성을 비교하였다. 태양 모사장치는 300W 제논램프(Newport사 6258)와 AM1.5G 필터(Newport사 81088A)를 사용하였고, 빛의 세기는 100mW/cm로 설정하였다.The solar cells manufactured in Example 1 and Comparative Examples 1 and 2, respectively, were compared using a solar simulator (Newport 66984) to compare the current-voltage characteristics. The solar head was used with a 300W xenon lamp (Newport 6258) and an AM1.5G filter (Newport 81088A) and the light intensity was set to 100 mW / cm.
도 4는 AAO에 광활성층을 도포하기 전 AAO의 모습으로 각각 bare AAO, 금 박막이 형성된 AAO (열처리 전), 열처리 후 금 입자가 형성된 AAO의 SEM 사진도를 나타낸 것이고, 도 5는 태양전지의 광활성층의 단면을 나타낸 SEM 사진도이다. 4 is a view of the AAO before applying the photoactive layer to the AAO, showing a SEM image of the AAO bare bare AAO, gold thin film is formed before the AAO (heat treatment), the gold particles after the heat treatment, Figure 5 is a solar cell SEM photograph showing a cross section of the photoactive layer.
도 6은 상기 실시예 1과 비교예 1 및 2에서 제조된 태양전지의 흡수량을 나타낸 것이고, 도 7은 상기 태양전지들의 광전류량(효율)을 나타낸 것이다. 상기 태양전지들은 2개씩 제조하여 측정하였고 이들의 효율은 도 7의 좌측 표와 그래프에 각각 나타내었다.Figure 6 shows the absorption of the solar cells manufactured in Example 1 and Comparative Examples 1 and 2, Figure 7 shows the photocurrent amount (efficiency) of the solar cells. Two solar cells were manufactured and measured, and their efficiency is shown in the left table and the graph of FIG. 7, respectively.
도 7에 나타난 바와 같이, 금 입자인 형태일 때 효율이 가장 높은 것을 확인할 수 있었다.As shown in Figure 7, it was confirmed that the highest efficiency in the form of gold particles.
Claims (15)
상기 양극과 음극 사이에 존재하는 광활성층을 포함하되, 상기 광활성층은
다공성 금속 산화물 박막;
상기 박막의 상단부에 형성된 금 입자층; 및
상기 박막의 홀에 적층된 전자수용체 및 정공수용체를 포함하는 박막형 태양전지.
An anode and a cathode facing each other; And
It includes a photoactive layer existing between the anode and the cathode, the photoactive layer is
Porous metal oxide thin films;
A gold particle layer formed at an upper end of the thin film; And
Thin film type solar cell comprising an electron acceptor and a hole acceptor laminated in the hole of the thin film.
음극 상부에는 전극개질층이 추가로 형성되는 박막형 태양전지.
The method of claim 1,
A thin film solar cell having an electrode reformed layer further formed on the cathode.
전극개질층은 TiOx(1＜x＜2), TiO2, ZnO:Al, ZnO:B, ZnO:Ga, ZnO:N, SnO2, 또는 ITO 중 하나의 금속산화물로 구성되거나; ZnO 계 나노입자, Doped-ZnO(ZnO:Al, ZnO:B, ZnO:Ga, ZnO:N 등)계 나노입자, SnO2 나노입자, ITO 나노입자, 또는 TiO2 나노입자 중 하나의 금속산화물 나노입자로 구성되거나; Cs2CO3, titanium(diisoproxide)bis(2,4-pentadionate) 중 하나의 유기-금속화합물로 구성되거나; CdS, ZnS, MnS, Zn(O,S), ZnSe, (Zn,In)Se, In(OH,S), 또는 In2S3 중 하나의 n-형 특성의 칼코지나이드 화합물 나노입자로 구성되거나; tetrakis(dimethylamino)ethylene, poly(ethylene oxide)의 저분자와 고분자, hexadecanthiol, 1H,1H,2H,2H-perfluoro decanethiol의 유기화합물로 구성된 형태 중 하나 또는 하나 이상인 박막형 태양전지.
The method of claim 2,
The electrode reformed layer is composed of a metal oxide of one of TiOx (1 <x <2), TiO 2 , ZnO: Al, ZnO: B, ZnO: Ga, ZnO: N, SnO 2 , or ITO; ZnO-based nanoparticles, Doped-ZnO (ZnO: Al, ZnO: B, ZnO: Ga, ZnO: N, etc.) based nanoparticles, SnO 2 nanoparticles, ITO nanoparticles, or one of the metal oxide nanoparticles of TiO 2 nanoparticles Consisting of particles; Or an organic-metal compound of one of Cs 2 CO 3 and titanium (diisoproxide) bis (2,4-pentadionate); Consists of n-type chalcogenide compound nanoparticles of one of CdS, ZnS, MnS, Zn (O, S), ZnSe, (Zn, In) Se, In (OH, S), or In 2 S 3 Or; A thin film solar cell comprising one or more of tetrakis (dimethylamino) ethylene, low molecular weight of poly (ethylene oxide), polymer, organic compounds of hexadecanthiol, 1H, 1H, 2H, 2H-perfluoro decanethiol.
다공성 금속 산화물 박막은 Al2O3, ZrO3, 또는 TiO2로 구성된 박막형 태양전지.
The method of claim 1,
The porous metal oxide thin film is a thin film solar cell composed of Al 2 O 3 , ZrO 3 , or TiO 2 .
금 입자는 5 nm 내지 15 nm의 두께를 갖는 박막형 태양전지.
The method of claim 1,
Gold particles have a thickness of 5 nm to 15 nm thin-film solar cell.
전자수용체는 플러렌(fullerene), (6,6)-페닐-C61-부티릭에시드 메틸에스테르[(6,6)-phenyl-C61-butyric acid methyl ester, PCBM], (6,6)-페닐-C71-부티릭에시드 메틸에스테르[(6,6)-phenyl-C71-butyric acid methyl ester, C70-PCBM], C71-PCBM, C84-PCBM, (6,6)-티에닐-C61-부티릭에시드 메틸에스테르[(6,6)-thienyl-C61-butyric acid methyl ester; ThCBM], bis-PCBM, 페릴렌, CdS, CdTe, CdSe, ZnO 및 이들의 혼합물로 구성된 군에서 선택되는 박막형 태양전지.
The method of claim 1,
The electron acceptor is a fullerene (fullerene), (6,6) - phenyl -C 61 - butyric rigs Acid methyl ester [(6,6) -phenyl-C 61 -butyric acid methyl ester, PCBM], (6,6) - phenyl -C 71 - butyric rigs Acid methyl ester [(6,6) -phenyl-C 71 -butyric acid methyl ester, C 70 -PCBM], C 71 -PCBM, C 84 -PCBM, (6,6) - thienyl Nyl-C61-butyric acid methyl ester [(6,6) -thienyl-C 61 -butyric acid methyl ester; ThCBM], bis-PCBM, perylene, CdS, CdTe, CdSe, ZnO and a thin film solar cell selected from the group consisting of a mixture thereof.
정공수용체는 폴리-3-헥실티오펜[poly-3-hexylthiophene, P3HT], 폴리-3-폴리-3-옥틸티오펜[poly-3-octylthiophene, P3OT], 폴리파라페닐렌비닐렌[poly-p-phenylenevinylene, PPV], 폴리(디옥틸플루오렌)[poly(9,9'-dioctylfluorene)], 폴리(2-메톡시,5-(2-에틸-헥실옥시)-1,4-페닐렌비닐렌)[poly(2-methoxy,5-(2-ethyle-hexyloxy)-1,4-phenylenevinylene, MEH-PPV], 폴리(2-메틸,5-(3',7'-디메틸옥틸옥시))-1,4-페닐렌비닐렌[poly(2-methyl,5-(3',7'-dimethyloctyloxy))-1,4-phenylene vinylene, MDMO-PPV] 및 이들의 혼합물로 구성된 군에서 선택되는 박막형 태양전지.
The method of claim 1,
The hole receptor is poly-3-hexylthiophene (P 3 HT), poly-3-poly-3-octylthiophene (poly-3-octylthiophene, P3OT), polyparaphenylenevinylene [ poly-p-phenylenevinylene, PPV], poly (dioctylfluorene) [poly (9,9'-dioctylfluorene)], poly (2-methoxy, 5- (2-ethyl-hexyloxy) -1,4 -Phenylenevinylene) [poly (2-methoxy, 5- (2-ethyle-hexyloxy) -1,4-phenylenevinylene, MEH-PPV], poly (2-methyl, 5- (3 ', 7'-dimethyl Octyloxy))-1,4-phenylenevinylene [poly (2-methyl, 5- (3 ', 7'-dimethyloctyloxy))-1,4-phenylene vinylene, MDMO-PPV] and mixtures thereof Thin film solar cell selected from the group.
전자수용체 및 정공수용체는 5:5 내지 6:4의 중량비로 혼재되어 있는 박막형 태양전지.
The method of claim 1,
The electron acceptor and the hole acceptor are thin film solar cells that are mixed in a weight ratio of 5: 5 to 6: 4.
광활성층 상부에는 전자차단층이 추가로 형성되어 있는 박막형 태양전지.
The method of claim 1,
A thin film solar cell having an electron blocking layer further formed on the photoactive layer.
전자차단층은 MoO2, V2O5 및 WO3 로 이루어진 군으로부터 선택된 하나 이상의 전이금속 산화물; PEDOT:PSS, 폴리아닐린, 폴리피롤, 폴리(p-페닐렌비닐렌), MEH-PPV(poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene), MDMO-PPV(poly(2-methoxy-5-(3,7-dimethyloctyloxy)-1,4-phenylene-vinylene), 폴리(3-알킬티오펜) 및 폴리티오펜으로 이루어진 군으로부터 선택된 하나 이상의 전도성 고분자; 펜타센; CuPc; 또는 트리페닐디아민 유도체(TPD) 중 적어도 하나인 박막형 태양전지.
10. The method of claim 9,
The electron blocking layer comprises at least one transition metal oxide selected from the group consisting of MoO 2 , V 2 O 5 and WO 3 ; PEDOT: PSS, polyaniline, polypyrrole, poly (p-phenylenevinylene), MEH-PPV (poly [2-methoxy-5- (2'-ethyl-hexyloxy) -1,4-phenylenevinylene), MDMO-PPV ( at least one conductive polymer selected from the group consisting of poly (2-methoxy-5- (3,7-dimethyloctyloxy) -1,4-phenylene-vinylene), poly (3-alkylthiophene) and polythiophene; Thin film type solar cell, which is at least one of CuPc or triphenyldiamine derivative (TPD).
다공성 금속 산화물 박막에 금 입자층을 증착하는 단계;
상기 단계에서 얻은 상단부에 금 입자층이 증착된 다공성 금속 산화물 박막을 상기 음극 상부에 적층하고, 상기 박막에 전자수용체 및 정공수용체를 용매에 분산시킨 각각의 용액 또는 이들의 혼합액을 도포하여 광활성층을 형성하는 단계; 및
상기 광활성층 상부에 양극을 형성하는 단계를 포함하는 박막형 태양전지의 제조방법.
Forming a cathode on the substrate;
Depositing a gold particle layer on the porous metal oxide thin film;
A porous metal oxide thin film having a gold particle layer deposited on the upper end obtained in the above step was laminated on the cathode, and the photoactive layer was formed by applying each solution or a mixture thereof in which the electron acceptor and the hole acceptor were dispersed in a solvent. Making; And
A method of manufacturing a thin film solar cell comprising forming an anode on the photoactive layer.
음극 상부에 전극개질층을 형성하는 단계를 더 포함하는 박막형 태양전지의 제조방법.
The method of claim 11,
A method of manufacturing a thin film solar cell further comprising forming an electrode reformed layer on the cathode.
다공성 금속 산화물 박막은 금속 박막이 양극산화방법을 통해 산화 형성된 다공성 구조의 홀이 배열된 형태인 박막형 태양전지의 제조방법.
The method of claim 11,
The porous metal oxide thin film is a method of manufacturing a thin-film solar cell in which the metal thin film is formed by the formation of holes of the porous structure oxidized through anodization.
금속 박막은 4족 원소인 금속 물질로 제조되는 박막형 태양전지의 제조방법.
The method of claim 13,
Metal thin film is a method of manufacturing a thin-film solar cell made of a metal material that is a Group 4 element.
광활성층 상부에 전자차단층을 형성하는 단계를 더 포함하는 박막형 태양전지의 제조방법.The method of claim 11,
The method of manufacturing a thin film solar cell further comprising forming an electron blocking layer on the photoactive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110064773A KR101170919B1 (en) | 2011-06-30 | 2011-06-30 | Solar cell with enhanced energy efficiency by surface plasmon resonance effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020110064773A KR101170919B1 (en) | 2011-06-30 | 2011-06-30 | Solar cell with enhanced energy efficiency by surface plasmon resonance effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR101170919B1 true KR101170919B1 (en) | 2012-08-03 |
Family
ID=46886948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110064773A KR101170919B1 (en) | 2011-06-30 | 2011-06-30 | Solar cell with enhanced energy efficiency by surface plasmon resonance effect |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101170919B1 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101639521B1 (en) * | 2015-04-07 | 2016-07-13 | 성균관대학교산학협력단 | Electrode for solar cell with metal nano particle array formed on the electrode using biocompatible organic materials template and method of fabricating thereof |
| US9660207B2 (en) | 2012-07-25 | 2017-05-23 | Samsung Electronics Co., Ltd. | Organic solar cell |
| CN110783472A (en) * | 2019-09-30 | 2020-02-11 | 长安大学 | LED containing PMOT PPV/ZnO Cu/ZnO Al heterojunction and preparation method thereof |
| CN112795218A (en) * | 2021-02-03 | 2021-05-14 | 中晟嘉特材料科技(西安)有限公司 | Salt-fog-resistant silver-plated aluminum powder conductive coating and preparation method thereof |
| CN113948654A (en) * | 2021-10-26 | 2022-01-18 | 湖南恒显坤光电科技有限公司 | OLED device and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010027794A (en) | 2008-07-17 | 2010-02-04 | Fujifilm Corp | Photoelectric converting device |
-
2011
- 2011-06-30 KR KR1020110064773A patent/KR101170919B1/en not_active IP Right Cessation
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010027794A (en) | 2008-07-17 | 2010-02-04 | Fujifilm Corp | Photoelectric converting device |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9660207B2 (en) | 2012-07-25 | 2017-05-23 | Samsung Electronics Co., Ltd. | Organic solar cell |
| KR101639521B1 (en) * | 2015-04-07 | 2016-07-13 | 성균관대학교산학협력단 | Electrode for solar cell with metal nano particle array formed on the electrode using biocompatible organic materials template and method of fabricating thereof |
| CN110783472A (en) * | 2019-09-30 | 2020-02-11 | 长安大学 | LED containing PMOT PPV/ZnO Cu/ZnO Al heterojunction and preparation method thereof |
| CN110783472B (en) * | 2019-09-30 | 2022-01-04 | 长安大学 | LED containing PMOT PPV/ZnO Cu/ZnO Al heterojunction and preparation method thereof |
| CN112795218A (en) * | 2021-02-03 | 2021-05-14 | 中晟嘉特材料科技(西安)有限公司 | Salt-fog-resistant silver-plated aluminum powder conductive coating and preparation method thereof |
| CN112795218B (en) * | 2021-02-03 | 2022-02-25 | 中晟嘉特材料科技(西安)有限公司 | Salt-fog-resistant silver-plated aluminum powder conductive coating and preparation method thereof |
| CN113948654A (en) * | 2021-10-26 | 2022-01-18 | 湖南恒显坤光电科技有限公司 | OLED device and preparation method thereof |
| CN113948654B (en) * | 2021-10-26 | 2024-03-01 | 湖南恒显坤光电科技有限公司 | OLED device and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Mahmoudi et al. | Graphene and its derivatives for solar cells application | |
| Maniarasu et al. | Recent advancement in metal cathode and hole-conductor-free perovskite solar cells for low-cost and high stability: A route towards commercialization | |
| Liang et al. | Chemical bath deposited rutile TiO2 compact layer toward efficient planar heterojunction perovskite solar cells | |
| Guo et al. | Graphene based materials: enhancing solar energy harvesting | |
| Song et al. | Challenges and opportunities for graphene as transparent conductors in optoelectronics | |
| AU2019257470A1 (en) | A Photovoltaic Device | |
| US7462774B2 (en) | Photovoltaic devices fabricated from insulating nanostructured template | |
| US20100096004A1 (en) | Solar cell with nanostructure electrode(s) | |
| Yang et al. | Organic solar cells employing electrodeposited nickel oxide nanostructures as the anode buffer layer | |
| Kadam et al. | Optimization of ZnO: PEIE as an electron transport layer for flexible organic solar cells | |
| Li et al. | Boost the performance of inverted perovskite solar cells with PEDOT: PSS/Graphene quantum dots composite hole transporting layer | |
| Qiao et al. | Organic/inorganic polymer solar cells using a buffer layer from all-water-solution processing | |
| KR20140146010A (en) | Organic solar cell and manufacturing the same | |
| KR101170919B1 (en) | Solar cell with enhanced energy efficiency by surface plasmon resonance effect | |
| WO2009139487A1 (en) | Photoelectric conversion element | |
| Kim et al. | Nip-type perovskite solar cells employing n-type graphene transparent conductive electrodes | |
| TWI394309B (en) | Dye-sensitized solar cell and method forming the same | |
| KR101559098B1 (en) | Core-shell type nanocomposites included fullerene particle using barrier layer of hole transport layer and preparation method thereof, and solar cell comprising the same | |
| US20220209151A1 (en) | Transparent electrode, process for producing transparent electrode, and photoelectric conversion device comprising transparent electrode | |
| Ogundele et al. | Ternary atoms alloy quantum dot assisted hole transport in thin film polymer solar cells | |
| KR20120111754A (en) | Organic solar cell using nanocomposite of titania nanosheet and graphene | |
| KR101458565B1 (en) | Organic solar cell and the manufacturing method thereof | |
| Takahashi et al. | Efficiency increase by insertion of electrodeposited CuSCN layer into ITO/organic solid interface in bulk hetero-junction solar cells consisting of polythiophene and fullerene | |
| JP5554529B2 (en) | Photoelectric conversion device and solar cell | |
| KR102135101B1 (en) | Semi-transparent/flexible solar cell and method for manufacturing thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20150703 Year of fee payment: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20160607 Year of fee payment: 5 |
|
| LAPS | Lapse due to unpaid annual fee |