KR101130263B1 - Method for manufacturing uncooled infrared sensor using parylene - Google Patents
Method for manufacturing uncooled infrared sensor using parylene Download PDFInfo
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- KR101130263B1 KR101130263B1 KR1020100107543A KR20100107543A KR101130263B1 KR 101130263 B1 KR101130263 B1 KR 101130263B1 KR 1020100107543 A KR1020100107543 A KR 1020100107543A KR 20100107543 A KR20100107543 A KR 20100107543A KR 101130263 B1 KR101130263 B1 KR 101130263B1
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- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 229920000052 poly(p-xylylene) Polymers 0.000 title abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000010410 layer Substances 0.000 claims description 62
- 238000000151 deposition Methods 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 13
- 238000000576 coating method Methods 0.000 claims description 13
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 9
- 229910001120 nichrome Inorganic materials 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 238000004380 ashing Methods 0.000 claims description 3
- 238000001029 thermal curing Methods 0.000 claims description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000000197 pyrolysis Methods 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 6
- 229910001935 vanadium oxide Inorganic materials 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 3
- 239000011358 absorbing material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 206010033799 Paralysis Diseases 0.000 description 1
- IUHFWCGCSVTMPG-UHFFFAOYSA-N [C].[C] Chemical compound [C].[C] IUHFWCGCSVTMPG-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
Description
본 발명은 파이롤리시스 온도 및 두께에 따라 변화되는 패럴린 재료를 이용함으로써 원하는 저항값으로의 조절이 용이하며, 저가의 고분해능 비냉각 적외선 센서 및 카메라에 적용 가능한 패럴린을 이용한 비냉각 적외선 센서 제조방법에 관한 것이다. The present invention is easy to adjust to the desired resistance value by using a paraline material that changes depending on the pyrrolysis temperature and thickness, manufacturing a low-cost high-resolution uncooled infrared sensor and an uncooled infrared sensor using a paraline applicable to the camera It is about a method.
일반적으로 비냉각 적외선 흡수재료는 장파장 영역에서 저항이 수 mega Ohm ~ 수백 Kohm이며 재료에 따라 다르게 나타나며, 주로 사용되는 재료로는 비정질 실리콘(amorphous Si : a-Si), 산화바나듐(VOx) 등의 물질이 있다. In general, the uncooled infrared absorbing material has a resistance in the long wavelength range of several mega Ohm to several hundred Kohm and varies depending on the material. The mainly used materials are amorphous silicon (a-Si) and vanadium oxide (VOx). There is a substance.
한편, 비정질 실리콘(a-Si)은 수 ~ Mohm로 저항이 매우 높은 특성을 가지며, 산화바나듐(VOx)은 산소의 phase가 수십~KOhm 으로 매우 다양하여 재현성이 낮은 특성을 가진다. On the other hand, amorphous silicon (a-Si) has a very high resistance to a few ~ Mohm, vanadium oxide (VOx) has a characteristic of low reproducibility, because the oxygen phase is very diverse as dozens ~ KOhm.
따라서, 기존의 비냉각 적외선 센서 제조 공정에서는 비정질 실리콘(a-Si), 산화바나듐(VOx) 등의 물질의 특성에 의해, 저항 조절이 불가한 문제점이 있었다. Therefore, in the conventional uncooled infrared sensor manufacturing process, there is a problem in that resistance control is impossible due to the properties of materials such as amorphous silicon (a-Si) and vanadium oxide (VOx).
본 발명은 상기와 같은 문제점을 감안하여 안출된 것으로, 재현성이 높은 패럴린 카본(Carbon)을 적외선 흡수재료로 사용함으로써, 저항 조절이 용이한 패럴린을 이용한 비냉각 적외선 센서 제조방법을 제공함에 그 목적이 있다. The present invention has been made in view of the above problems, by using a highly reproducible paraline carbon (Carbon) as an infrared absorbing material, to provide a method for manufacturing an uncooled infrared sensor using paraline easy to control resistance There is a purpose.
이러한 기술적 과제를 달성하기 위한 본 발명은 패럴린을 이용한 비냉각 적외선 센서 제조방법에 관한 것으로서, (a) Si Wafer 또는 Si 신호취득회로(Readout Integrated circuit: ROIC 상에 신호획득을 위한 제 1 전극 및 반사막을 증착하는 공정; (b) 희생층을 코팅하는 공정; (c) 상기 희생층 상부에 절연층을 증착하는 공정; (d) 상기 절연층 상부에 제 1 패럴린층을 코팅하는 공정; (e) 상기 제 1 패럴린 층 상부에 제 2 전극을 증착하는 공정; (f) 상기 제 2 전극을 식각하는 공정; (g) 씨앗층(Seed Layer)을 위한 Via 홀 도금공정을 수행하고, Au 도금 또는 Al 스퍼터링(sputtering) 방식을 이용하여 제 3 전극을 증착하는 공정; (h) 상기 절연층 및 제 1 패럴린층 상부 일부에 제 2 패럴린층을 코팅한 후, 패턴을 식각하는 공정; (i) 상기 제 1 페럴린층(60) 및 제 2 패럴린층 상부 일부에 흡수층을 증착한 후 패터닝하는 공정; 및 (j) 상기 희생층을 제거하는 공정; 을 포함하는 것을 특징으로 한다. The present invention for achieving the above technical problem relates to a method for manufacturing an uncooled infrared sensor using paraline, (a) a first electrode for obtaining a signal on a Si Wafer or Si signal acquisition circuit (ROIC) and (B) coating the sacrificial layer; (c) depositing an insulating layer over the sacrificial layer; (d) coating a first paraline layer over the insulating layer; A process of depositing a second electrode on the first paraline layer, (f) etching the second electrode, (g) performing a Via hole plating process for a seed layer, and Au plating Or depositing a third electrode using an Al sputtering method, (h) coating a second paraline layer on a portion of the insulating layer and an upper part of the first paraline layer, and then etching the pattern; Absorbed in the upper part of the first and the second parylene layer 60 A step of patterning after depositing; characterized in that it comprises; and (j) a step of removing the sacrificial layer.
또한 상기 (a) 공정은, Al, NiCr, TiW 중 한 가지 물질 또는 복합물질을 이빔(e-beam) 또는 스퍼터링(sputtering) 방식을 이용하여 0.3 ㎛ 내지 0.7 ㎛ 두께로 증착하는 것을 특징으로 한다.In addition, the step (a) is characterized in that to deposit one or a composite material of Al, NiCr, TiW to a thickness of 0.3 ㎛ to 0.7 ㎛ using an e-beam or sputtering method.
또한 상기 (b) 공정은, 폴리이미드(Polyimide)를 2 ㎛ 내지 2.5 ㎛로 코팅하며, 300℃ 내지 400℃ 온도로 열 경화하는 것을 특징으로 한다.In addition, the step (b), the polyimide (Polyimide) is coated with 2 ㎛ to 2.5 ㎛, it characterized in that the thermal curing at 300 ℃ to 400 ℃ temperature.
또한 상기 (c) 공정은, SIO2, SINx, SION 중, 한 가지 재료를 PECVD(Plasma-Enhanced Chemical Vapor Deposition) 방식을 이용하여, 0.2 ㎛ 내지 0.5 ㎛로 증착하는 것을 특징으로 한다. In the step (c), one material among SIO 2 , SINx, and SION is deposited at 0.2 μm to 0.5 μm by using a plasma-enhanced chemical vapor deposition (PECVD) method.
또한 상기 (d) 공정은, 550℃ 내지 800℃의 온도로 파이롤라이즈(Pyrolyze)된 제 1 패럴린층을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅하는 것을 특징으로 한다.In addition, the step (d) is characterized in that the pyrrolyze (Pyrolyze) the first paraline layer at a temperature of 550 ℃ to 800 ℃ to coat a thickness of 0.5 ㎛ to 1.5 ㎛.
또한 상기 (e) 공정은, Al, NiCr, TiW 중, 어느 하나의 물질 또는 복합물질로 이루어진 제 2 전극을 0.2 ㎛ 내지 0.5 ㎛ 의 두께로 증착하는 것을 특징으로 한다.In addition, the step (e) is characterized in that to deposit a second electrode made of any one material or a composite material of Al, NiCr, TiW to a thickness of 0.2 ㎛ to 0.5 ㎛.
또한 상기 (f) 공정은, RIE(Reactive Ion Eching) 장비를 이용하여, 상기 제 2 전극을 식각하는 것을 특징으로 한다. In the step (f), the second electrode may be etched by using reactive ion etching (RIE) equipment.
또한 상기 (h) 공정은, 550℃ 내지 800℃ 온도로 파이롤라이즈(Pyrolyze)된 제 2 패럴린층을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅하는 것을 특징으로 한다.In addition, the step (h) is characterized in that the coating of the second paraline layer (Pyrolyze) at a temperature of 550 ℃ to 800 ℃ to a thickness of 0.5 ㎛ to 1.5 ㎛.
또한 상기 (i) 공정은, TI, NiCr, TiW 중, 하나를 이용한 단일층 또는 2개이상을 이용한 복합층 구조로 흡수층을 증착한 후, 10 ㎚ 내지 50㎚ 의 두께로 코팅한 후, 패터닝하는 것을 특징으로 한다.In addition, in the step (i), after depositing the absorbing layer in a single layer using TI, NiCr, TiW, or a multi-layer structure using two or more, coating with a thickness of 10 nm to 50 nm, and then patterning It is characterized by.
그리고 상기 (j) 공정은, 플라즈마 연소(Plasma ashing) 방법을 이용하여 상기 희생층을 제거하는 것을 특징으로 한다. In the step (j), the sacrificial layer is removed using a plasma ashing method.
상기와 같은 본 발명에 따르면, 파이롤리시스 온도 및 두께에 따라 변화되는 패럴린 재료를 이용함으로써 원하는 저항값으로의 조절이 용이하며, 저가의 고분해능 비냉각 적외선 센서 및 카메라에 적용 가능한 효과가 있다. According to the present invention as described above, it is easy to adjust to the desired resistance value by using a paraline material that varies according to the pyrrolysis temperature and thickness, there is an effect that can be applied to a low-cost high-resolution uncooled infrared sensor and camera.
도 1 내지 도 2 는 본 발명의 일실시예에 따른 패럴린을 이용한 비냉각 적외선 센서 제조방법에 관한 전체 흐름도. 1 to 2 is an overall flow diagram of a method for manufacturing an uncooled infrared sensor using a paraline according to an embodiment of the present invention.
본 발명의 구체적 특징 및 이점들은 첨부도면에 의거한 다음의 상세한 설명으로 더욱 명백해질 것이다. 이에 앞서 본 발명에 관련된 공지 기능 및 그 구성에 대한 구체적인 설명이 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는, 그 구체적인 설명을 생략하였음에 유의해야 할 것이다.Specific features and advantages of the present invention will become more apparent from the following detailed description based on the accompanying drawings. In the meantime, when it is determined that the detailed description of the known functions and configurations related to the present invention may unnecessarily obscure the subject matter of the present invention, it should be noted that the detailed description is omitted.
이하, 첨부된 도면을 참조하여 본 발명을 상세하게 설명한다. Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.
본 발명의 일실시예에 따른 패럴린을 이용한 비냉각 적외선 센서 제조방법에 관하여 도 1 내지 도 2 를 참조하여 설명하면 다음과 같다. A method of manufacturing an uncooled infrared sensor using paraline according to an embodiment of the present invention will be described with reference to FIGS. 1 to 2.
도 1 내지 도 2 는 본 발명에 따른 패럴린을 이용한 비냉각 적외선 센서 제조방법에 관한 전체 흐름도이다. 1 to 2 is an overall flow chart of a method for manufacturing an uncooled infrared sensor using a parline according to the present invention.
[제 1 공정] 앵커전극 및 반사막 증착(S100).[First Step] Anchor electrode and reflective film deposition (S100).
Si Wafer 또는 Si 신호취득회로(Readout Integrated circuit: ROIC)(10)상에 신호획득을 위한 제 1 전극(20) 및 반사막(30)을 증착한다. The
이때, 제 1 전극(20) 및 반사막(30)은 Al, NiCr, TiW 중 한 가지 물질 또는 복합물질을 이빔(e-beam) 또는 스퍼터링(sputtering) 방식을 이용하여 0.3 ㎛ 내지 0.7 ㎛ 두께로 증착한다.
At this time, the
[제 2 공정] 희생층 코팅(S200).[Second Step] Sacrificial layer coating (S200).
희생층(40)으로서, 폴리이미드(Polyimide)를 장파장 적외선의 1/4 두께인 2 ㎛ 내지 2.5 ㎛로 코팅하며, 이후 300℃ 내지 400℃ 온도로 열 경화시킨다.
As the
[제 3 공정] 절연층 증착(S300).Third Step Insulating layer deposition (S300).
상기 희생층(40) 상부에 절연층(50)을 증착한다. The
이때, 상기 절연층(50)의 재료로서, SIO2, SINx, SION 중, 한 가지 재료를 PECVD(Plasma-Enhanced Chemical Vapor Deposition) 방식을 이용하여, 0.2 ㎛ 내지 0.5 ㎛로 증착한다.
At this time, as a material of the
[제 4 공정] 제 1 패럴린층 코팅(S400).[Fourth step] The first parallel layer coating (S400).
상기 절연층(50) 상부에 550℃ 내지 800℃ 바람직하게 600℃의 온도로 파이롤라이즈(Pyrolyze)된 제 1 패럴린층(60)을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅한다.
The pyrolyzed
[제 5 공정] 제 2 전극 증착(S500).Fifth Step Second electrode deposition (S500).
상기 제 1 패럴린 층(60) 상부에 Al, NiCr, TiW 중, 어느 하나의 물질 또는 복합물질로 이루어진 제 2 전극(70)을 0.2 ㎛ 내지 0.5 ㎛ 의 두께로 증착한다.
A
[제 6 공정] 제 2 전극 식각(S600). [Sixth Step] Second Electrode Etching (S600).
RIE(Reactive Ion Eching) 장비를 이용하여, 상기 제 2 전극(70)을 식각한다. 이에 따라, 제 2 패럴린 층을 증착하기 위한 부분이 오픈된다.
The
[제 7 공정] 제 3 전극 증착(S700). [Seventh Step] Third Electrode Deposition (S700).
씨앗층(Seed Layer)을 위한 Via 홀 도금공정을 수행하고, Au 도금 또는 Al 스퍼터링(sputtering) 방식을 이용하여 제 3 전극(80)을 증착한다.
Via hole plating is performed for the seed layer, and the
[제 8 공정] 제 2 패럴린층 코팅 및 식각(S800). [Eighth Step] Coating and etching of the second parylene layer (S800).
상기 절연층(50) 및 제 1 패럴린층(60) 상부 일부에 550℃ 내지 800℃ 바람직하게 750℃의 온도로 파이롤라이즈(Pyrolyze)된 제 2 패럴린층(90)을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅한 후, 패턴을 식각한다.
A portion of the upper part of the
[제 9 공정] 흡수층 증착 및 패터닝(S900). Ninth Step Absorption layer deposition and patterning (S900).
상기 제 1 페럴린층(60) 및 제 2 패럴린층(90) 상부 일부에 TI, NiCr, TiW 중, 하나를 이용한 단일층 또는 2개이상을 이용한 복합층 구조로 흡수층(100)을 증착한 후, 10 ㎚ 내지 50㎚ 의 두께로 코팅한 후, 패터닝한다.
After depositing the absorbing
[제 10 공정] 희생층 제거(S1000). [Step 10] Removing the sacrificial layer (S1000).
플라즈마 연소(Plasma ashing) 방법을 이용하여 상기 희생층(40)을 제거한다.The
이때, 제거된 공간은 2 ㎛ 내지 2.5 ㎛의 두께이며, 8 ㎛ 내지 12 ㎛ 파장의 공명 흡수층으로 형성된다.
At this time, the removed space is 2 μm to 2.5 μm thick and is formed of a resonance absorbing layer having a wavelength of 8 μm to 12 μm.
이상으로 본 발명의 기술적 사상을 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 이와 같이 도시되고 설명된 그대로의 구성 및 작용에만 국한되는 것이 아니며, 기술적 사상의 범주를 일탈함이 없이 본 발명에 대해 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다. 따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다. While the present invention has been particularly shown and described with reference to preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. It will be appreciated by those skilled in the art that numerous changes and modifications may be made without departing from the invention. Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.
10: Si or ROIC 20: 제 1 전극
30: 반사막 40: 희생층
50: 절연층 60: 제 1 패럴린층
70: 제 2 전극 80: 제 3 전극
90: 제 2 패럴린층 100: 흡수층10: Si or ROIC 20: first electrode
30: reflective film 40: sacrificial layer
50: insulating layer 60: first paraline layer
70: second electrode 80: third electrode
90: second paraline layer 100: absorbing layer
Claims (10)
(b) 희생층(40)을 코팅하는 공정;
(c) 상기 희생층(40) 상부에 절연층(50)을 증착하는 공정;
(d) 상기 절연층(50) 상부에 제 1 패럴린층(60)을 코팅하는 공정;
(e) 상기 제 1 패럴린 층(60) 상부에 제 2 전극(70)을 증착하는 공정;
(f) 상기 제 2 전극(70)을 식각하는 공정;
(g) 씨앗층(Seed Layer)을 위한 Via 홀 도금공정을 수행하고, Au 도금 또는 Al 스퍼터링(sputtering) 방식을 이용하여 제 3 전극(80)을 증착하는 공정;
(h) 상기 절연층(50) 상부에 제 2 패럴린층(90)을 코팅한 후, 패턴을 식각하는 공정;
(i) 상기 제 2 패럴린층(90) 상부에 흡수층(100)을 증착한 후 패터닝하는 공정; 및
(j) 상기 희생층(40)을 제거하는 공정; 을 포함하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
(a) depositing a first electrode 20 and a reflective film 30 for signal acquisition on a Si wafer or Si signal acquisition circuit (ROIC) 10;
(b) coating the sacrificial layer 40;
(c) depositing an insulating layer 50 on the sacrificial layer 40;
(d) coating a first paraline layer (60) on the insulating layer (50);
(e) depositing a second electrode (70) on top of the first parallel layer (60);
(f) etching the second electrode (70);
(g) performing a via hole plating process for the seed layer, and depositing the third electrode 80 using Au plating or Al sputtering;
(h) etching the pattern after coating the second paraline layer 90 on the insulating layer 50;
(i) depositing and patterning an absorbing layer 100 on the second paraline layer 90; And
(j) removing the sacrificial layer 40; Method for producing an uncooled infrared sensor using a parline characterized in that it comprises a.
상기 (a) 공정은,
Al, NiCr, TiW 중 한 가지 물질 또는 복합물질을 이빔(e-beam) 또는 스퍼터링(sputtering) 방식을 이용하여 0.3 ㎛ 내지 0.7 ㎛ 두께로 증착하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (a),
Fabrication of an uncooled infrared sensor using paraline, characterized in that the deposition of one material or a composite material of Al, NiCr, TiW to a thickness of 0.3 ㎛ to 0.7 ㎛ by e-beam or sputtering method Way.
상기 (b) 공정은,
폴리이미드(Polyimide)를 2 ㎛ 내지 2.5 ㎛로 코팅하며, 300℃ 내지 400℃ 온도로 열 경화하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (b),
Polyimide (Polyimide) is coated with a 2 ㎛ to 2.5 ㎛, a method of manufacturing an uncooled infrared sensor using a paraline, characterized in that the thermal curing at 300 ℃ to 400 ℃ temperature.
상기 (c) 공정은,
SIO2, SINx, SION 중, 한 가지 재료를 PECVD(Plasma-Enhanced Chemical Vapor Deposition) 방식을 이용하여, 0.2 ㎛ 내지 0.5 ㎛로 증착하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (c),
A method of manufacturing an uncooled infrared sensor using paraline, characterized in that one of SIO 2 , SINx, and SION is deposited at 0.2 μm to 0.5 μm using a Plasma-Enhanced Chemical Vapor Deposition (PECVD) method.
상기 (d) 공정은,
550℃ 내지 800℃의 온도로 파이롤라이즈(Pyrolyze)된 제 1 패럴린층(60)을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (d),
A method of manufacturing an uncooled infrared sensor using paraline, characterized in that the pyrolyzed first paraline layer (60) at a temperature of 550 ℃ to 800 ℃ to a thickness of 0.5 ㎛ to 1.5 ㎛.
상기 (e) 공정은,
Al, NiCr, TiW 중, 어느 하나의 물질 또는 복합물질로 이루어진 제 2 전극(70)을 0.2 ㎛ 내지 0.5 ㎛ 의 두께로 증착하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The above (e) step,
A method of manufacturing an uncooled infrared sensor using paraline, comprising depositing a second electrode (70) made of any one of Al, NiCr, and TiW or a composite material to a thickness of 0.2 μm to 0.5 μm.
상기 (f) 공정은,
RIE(Reactive Ion Eching) 장비를 이용하여, 상기 제 2 전극(70)을 식각하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (f),
The method of manufacturing an uncooled infrared sensor using paraline, characterized in that for etching the second electrode (70) by using Reactive Ion Eching (RIE) equipment.
상기 (h) 공정은,
550℃ 내지 800℃ 온도로 파이롤라이즈(Pyrolyze)된 제 2 패럴린층(90)을 0.5 ㎛ 내지 1.5 ㎛의 두께로 코팅하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The above (h) process,
A method of manufacturing an uncooled infrared sensor using paraline, characterized in that the pyrolyzed second paraline layer (90) at a temperature of 550 ℃ to 800 ℃ to a thickness of 0.5 ㎛ to 1.5 ㎛.
상기 (i) 공정은,
TI, NiCr, TiW 중, 하나를 이용한 단일층 또는 2개이상을 이용한 복합층 구조로 흡수층(100)을 증착한 후, 10 ㎚ 내지 50㎚ 의 두께로 코팅한 후, 패터닝하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법.
The method of claim 1,
The step (i),
After depositing the absorbing layer 100 in a single layer using a single layer or a composite layer structure using two or more of TI, NiCr, TiW, and then coated in a thickness of 10 nm to 50 nm, the patterning is characterized in that the parallel Method for manufacturing an uncooled infrared sensor using lean.
상기 (j) 공정은,
플라즈마 연소(Plasma ashing) 방법을 이용하여 상기 희생층(40)을 제거하는 것을 특징으로 하는 패럴린을 이용한 비냉각 적외선 센서 제조방법. The method of claim 1,
The (j) step is,
A method of manufacturing an uncooled infrared sensor using paraline, characterized in that to remove the sacrificial layer (40) using a plasma ashing method.
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| KR20070064674A (en) * | 2004-10-15 | 2007-06-21 | 캐보트 코포레이션 | High resistivity compositions |
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