KR101098975B1 - Apparatus of processing substrate - Google Patents

Abstract

The substrate processing apparatus includes a chamber, a lid coupled to the chamber to seal the chamber, a plasma generation unit generating plasma, and a fluid supply pipe providing a passage through which the plasma moves. The lid is provided with a first heating member for heating the lid, whereby the plasma introduced into the inner space of the lid is heated. Thus, since the plasma is heated by the first heating member and then provided to the substrate, the lifetime of the radicals is extended to increase the number of radicals provided to the substrate. Accordingly, the substrate processing apparatus may improve the etching rate, the selective etching ratio, and the etching uniformity of the substrate, thereby improving process efficiency and product yield.

Description

Substrate Processing Unit {APPARATUS OF PROCESSING SUBSTRATE}

The present invention relates to an apparatus for processing a semiconductor element, and more particularly, to a substrate processing apparatus for processing a semiconductor substrate using plasma.

Electronic devices such as semiconductor memory devices or flat panel displays include substrates. A plurality of conductive layer patterns are formed on the substrate, and insulating layer patterns insulating the plurality of different conductive layer patterns are formed. For example, in the semiconductor memory device, the conductive layer patterns may be word lines or gate electrodes.

The process of forming the conductive film patterns or the insulating film patterns includes a plurality of processes. For example, in order to form a conductive film pattern, a process of forming a conductive film on a substrate and then patterning while partially removing the conductive film is required.

However, by-products, for example, oxide films, which are additionally generated in the process of forming or patterning a predetermined film, may be formed on the substrate. Therefore, since such an oxide film reduces the yield of the substrate, a process of removing it is added. Generally, in the oxide film removing step, after forming a reaction film that reacts with the oxide film on the oxide film upper surface, the reaction film is volatilized at a high temperature to remove the oxide film.

The reaction membrane may be formed by a dry etching apparatus using plasma, and the dry etching apparatus includes a chamber, a lid, a gas inlet pipe, and a plasma generating unit. The chamber provides a space in which a reaction film is formed, and a substrate is introduced therein. The lid engages with the chamber to seal the interior of the chamber. The gas inlet tube is coupled to the lid and provides a plasma inside the chamber for forming the reaction film. The plasma generation unit is coupled to the gas inlet tube, and generates plasma using the gas introduced into the gas inlet tube.

Gas for forming the plasma is introduced into the gas inlet pipe from the upper end of the gas inlet pipe. In addition, the gas inlet pipe is provided with a fluorine-based gas for lowering the radical density of the plasma from the middle of the gas inlet pipe and provided into the chamber.

Such a dry etching device has a short life time of radicals, so the etching amount per unit time is about 40 kPa (Angstrom) to 300 kPa. Therefore, such a dry etching apparatus is mainly used to remove an oxide film having a relatively thin thickness, such as a natural oxide film, and is difficult to apply to selectively etching an oxide film having a relatively thick thickness.

An object of the present invention is to provide a substrate processing apparatus capable of improving the etching rate and the selective etching ratio.

It is also an object of the present invention to provide a method of treating a substrate using the substrate processing apparatus described above.

According to one aspect of the present invention, there is provided a substrate processing apparatus including a chamber, a substrate support member, a lid, a plasma generating unit, a fluid supply pipe, and a first heating member.

The chamber provides a process space where the processing of the substrate takes place and the top is open. The substrate support member is accommodated in the process space and the substrate is seated. A lid is disposed on top of the chamber to engage with the chamber, provide an inlet hole, and partition the process space. The plasma generation unit generates a plasma for treating the substrate using the first gas. The fluid supply pipe is coupled to the upper surface of the lid, there is formed a fluid passage communicating with the inlet hole therein, the plasma generated by the plasma generating unit in combination with the plasma generating unit through the process through the fluid passage To provide space. The first heating member includes a first heating member installed on the lead to heat the lead.

In addition, the substrate processing apparatus according to one feature for realizing the above object of the present invention comprises a chamber, a substrate supporting member, a lid, a fluid supply pipe, and a plasma generating unit.

The chamber provides a process space where the processing of the substrate takes place and the top is open. The substrate support member is accommodated in the process space and the substrate is seated. A lid is disposed above the chamber to engage with the chamber, provide an inlet hole, and seal the process space. The fluid supply pipe is coupled to the lead and a fluid passage is formed in communication with the inlet hole. The plasma generator includes a plasma generator coupled to the fluid supply pipe and generating a plasma for treating the substrate by using the first gas introduced into the fluid passage. Specifically, the fluid supply pipe, the output end is coupled to the lead, the fluid passage is formed therein, the supply pipe is coupled to the plasma generating unit, and the supply pipe surrounding the plasma generating unit and the lead is located in the supply pipe And a heating part connected to a region between the portion where the plasma generation unit is coupled and the portion coupled to the lead and surrounding the supply pipe and heating the supply pipe.

Further, the substrate processing method according to one feature for realizing the above object of the present invention is as follows. First, the substrate on which the oxide film is formed is mounted on the substrate support member provided in the chamber. A plasma for treating the substrate is generated using a first gas. The resulting plasma is heated and provided to the substrate together with a second gas to form a reaction film that reacts with the oxide film and then removes the reaction film.

According to the present invention described above, since the substrate processing apparatus plasma is heated and provided to the substrate, the lifetime of radicals can be increased. Accordingly, since the number of radicals provided to the substrate is increased, the etching rate and the etching selectivity may be increased, the etching efficiency and the etching uniformity of the substrate may be improved, and the yield of the product may be improved.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention. Hereinafter, a substrate processing apparatus for etching a thin film using plasma will be described as an example, but the present invention can be applied to various semiconductor processing apparatuses including a deposition apparatus.

1 is a view showing a substrate processing apparatus according to an embodiment of the present invention, Figure 2 is a cross-sectional view showing a substrate support member shown in FIG.

1 and 2, the substrate processing apparatus of the present invention may include a processing unit 100 and a plasma generating unit 200. The processing unit 100 performs a wafer processing process using plasma, and the plasma generating unit 200 generates plasma necessary for the processing process of the wafer and provides the processing unit 100 to the processing unit 100.

In detail, the processing unit 100 may include a chamber 110, a substrate support member 120, first and second exhaust pipes 131 and 132, a baffle 140, and a lid 150.

The chamber 110 provides a process space PS through which the wafer processing process is performed, and first and second exhausts communicating with the first and second exhaust pipes 131 and 132 on the bottom surface 111, respectively. Holes 111a and 111b are formed. The reaction by-products generated in the process space PS and the gas introduced into the process space PS during the processing of the wafer communicate with the first and second exhaust holes 111a and 111b. 2 is discharged to the outside through the exhaust pipe (131, 132). In addition, the first and second exhaust pipes 131 and 132 are connected to an external pressure control device (not shown) so that the pressure inside the chamber 110 is increased through the first and second exhaust pipes 131 and 132. It can also be adjusted.

The substrate support member 120 is installed in the chamber 110. The substrate support member 120 includes a chuck 121 for supporting the wafer during the wafer processing, and a support shaft 122 installed under the chuck 121 to support the chuck 121.

In this embodiment, the chuck 121 may be a cold chuck capable of cooling the wafer.

The substrate support member 120 may further include a temperature controller 123 for controlling the temperature of the chuck 121. The temperature controller 123 may be embedded in the chuck 121 and include a plurality of temperature control blocks 123a, 123b, and 123c. The temperature control blocks 123a, 123b, and 123c are spaced apart from each other, and adjust the temperature of the chuck 121. For example, when the chuck 121 is a cooling chuck, each of the temperature control blocks 123a, 123b, and 123c may be a cooling block for cooling the chuck 121. On the other hand, when the chuck 121 is a heating chuck that heats the wafer, each of the temperature control blocks 123a, 123b, and 123c may be a heating block that heats the chuck 121.

In this embodiment, the temperature control unit 123 is composed of three temperature control blocks (123a, 123b, 123c), the number of the temperature control blocks (123a, 123b, 123c) is the size of the chuck 121 and It may increase or decrease depending on process efficiency.

The temperature control blocks 123a, 123b, and 123c may include first to third temperature control blocks 123a, 123b, and 123c. The first temperature control block 123a has a circular shape and is provided at the center of the chuck 121. The second temperature control block 123b surrounds the first temperature control block 123a and has a ring shape. The third temperature control block 123c surrounds the second temperature control block 123c and has a ring shape. In one example of the present invention, a refrigerant for cooling the chuck 121 may flow in each of the temperature control blocks 123a, 123b, and 123c.

Each of the temperature control blocks 123a, 123b, and 123c may be individually driven, and thus, temperatures of the first to third temperature control blocks 123a, 123b and 123c may be different from each other. As a result, the temperature of the chuck 121 can be locally controlled. That is, the substrate support member 120 processes the temperature of the central portion of the chuck 121 and the temperature of the edge region of the chuck 121 by the first to third temperature adjusting blocks 123a, 123b, and 123c. Can be set differently depending on the conditions. Accordingly, the substrate processing apparatus may locally control the etching uniformity when the oxide film is etched.

In this embodiment, the temperature control unit 123 is capable of temperature control for each temperature control block (123a, 123b, 123c), one temperature control block (123a, 123b, 123c) is separated into a plurality of pieces It may be partitioned to allow temperature control for each piece.

On the other hand, the baffle 140 and the lead 150 are provided on the substrate support member 120. The baffle 140 is coupled to an upper end of the chamber 110 and disposed to face the chuck 121. The baffle 140 has a plurality of holes are formed to uniformly diffuse the gas and plasma provided from the plasma generating unit 200 to pass to the process space (PS) side, and is grounded. The baffle 140 filters the plasma provided from the plasma generating unit 200 and mainly passes the radicals of the plasma toward the process space PS.

The lead 150 is provided at an upper portion of the baffle 140, and the lead 150 is coupled to an upper end of the chamber 110 to seal the process space PS.

3 is a cross-sectional view showing the lid shown in FIG.

1 and 3, the lead 150 may include a base lead 151 and a first heating member 152. The base lead 151 is coupled to the plasma generating unit 200, and an inlet 151a through which the fluid provided from the plasma generating unit 200, that is, plasma and gas, is introduced. A diffusion space DS is formed in the base lead 151 to diffuse plasma and gas introduced through the inlet 151a. The baffle 140 is positioned at a boundary between the diffusion space DS and the process space PS to separate and separate the process space PS and the diffusion space DS from each other. In one example of the present invention, the diffusion space DS is formed in an inverted funnel shape.

The first heating member 152 is embedded in the base lead 151 and heats the base lead 151. In this embodiment, the first heating member 152 is embedded in the base lead 151, but may be installed separately from the base lead 151. That is, the first heating member 152 may be installed on the inner surface of the base lead 151 or may be installed on the outer surface.

The first heating member 152 may include first to third heating cables 152a, 152b, and 152c. In this embodiment, the first heating member 152 has three heating cables 152a, 152b and 152c, but the number of the heating cables 152a, 152b and 152c is the size of the lead 150. And increase or decrease depending on process efficiency.

Also, in this embodiment, the first heating member 152 includes heating cables 152a, 152b, and 152c in the form of a line, but the first heating member 152 has a plurality of heatings having a plate shape. It may also consist of a heating plate or a plurality of heating coils.

The first to third heating cables 152a, 152b, and 152c each have a ring shape and are spaced apart from each other. The first heating cable 152a surrounds the inlet 151a, and the second heating cable 152b is spaced apart from the first heating cable 152a to surround the first heating cable 152a. The third heating cable 152c is spaced apart from the second heating cable 152b and surrounds the second heating cable 152b.

The first to third heating cables 152a, 152b, and 152c generate heat to heat the base lead 151. Accordingly, since the temperature of the diffusion space DS is increased, the life time of radicals introduced into the diffusion space DS is extended. Accordingly, since the number of kalical reaching the wafer is increased to etch the oxide film on the wafer, the substrate processing apparatus may improve the etching rate of the oxide film per unit time.

In addition, the first to third heating cables 152a, 152b and 152c may be individually driven, and thus, the first to third heating cables 152a, 152b and 152c may be adjusted to different temperatures. have. Accordingly, the lead 150 may set the temperature for each region where the temperature is controlled by the heating cables 152a, 152b, and 152c. That is, since the lead 150 can adjust the temperature for each of the heating cables 152a, 152b, and 152c, the temperature may be locally set according to process requirements and efficiency.

For example, when the temperature of the first heating cable 152a located at the center side of the base lead 151 is higher than the temperature of the third heating cable 152c located at the edge side of the base lead 151, the The temperature of the center portion of the lid 150 is higher than the edge side temperature of the lid 150.

As described above, since the temperature of the lead 150 may be locally controlled, the temperature of the lead 150 may be adjusted for each region according to the region-specific characteristics of the wafer and the current process requirements. Accordingly, the substrate processing apparatus may locally control the etching uniformity of the oxide film, and may improve process efficiency and product yield.

On the other hand, the lead 150 may further include a heat insulating member 153 to insulate the base lead 151. The heat insulating member 153 covers the entire outer surface of the base lead 151 so that the base lead 151 can be efficiently heated by the first heating member 152.

4 is a cross-sectional view illustrating another example of the lead illustrated in FIG. 3.

Referring to FIG. 4, the lead 170 has the same configuration as the lead 150 shown in FIG. 3 except for the first heating member. Therefore, in the following description of the structure of the lead 170, the same reference numerals are given to the same components as those of the lead 150 shown in FIG. 3, and the detailed description thereof will be omitted.

The lead 170 includes a base lead 151 and the first heating member embedded in the base lead 151. The first heating member includes first to third heating cables 171, 172, and 173, and the first to third heating cables 171, 172, and 173 are spaced apart from each other.

In this embodiment, the first to third heating cables 171, 172, and 173 are embedded in the base lead 151, but may be installed on an outer surface or an inner surface of the base lead 151. In addition, in this embodiment, the first heating member is provided with three heating cables 171, 172, 173, the number of the heating cable (171, 172, 173) is the size of the lead 170 and It may increase or decrease depending on process efficiency.

The first heating cable 171 has a ring shape and surrounds the inlet 151a of the base lead 151. The first heating cable 171 is separated into a plurality of heating pieces (171a), each heating piece (171a) can be driven individually. The second heating cable 172 has a ring shape and surrounds the first heating cable 171. The second heating cable 172 is separated into a plurality of heating pieces 172a, each of the heating pieces 172a can be driven individually. The third heating cable 173 has a ring shape and surrounds the second heating cable 172. The third heating cable 173 is divided into a plurality of heating pieces 173a, and each heating piece 173a may be driven individually.

As such, the first heating member may be driven for each heating cable 171, 172, and 173, and each heating cable 171, 172, and 173 is individually driven for each heating piece 171a, 172a, and 173a. This is possible. Accordingly, since the temperature can be adjusted for each heating piece 171a, 172a, and 173a, one heating cable 171, 172, and 173 may have different temperatures in the regions defined by the heating pieces. Accordingly, the lid 170 may locally adjust the temperature of the lid 170 more precisely according to the region-specific characteristics of the wafer and the process requirements.

Although not shown in FIG. 4, the lead 170 may further include a heat insulating member for insulating the base lead 151. The heat insulating member covers the entire outer surface of the base lead 151 so that the base lead 151 can be efficiently heated by the first heating member.

Again, the plasma generating unit 200 is installed above the lead 150. The plasma generation unit 200 may include a fluid supply pipe 210, a plasma generation unit 220, and first and second gas supply pipes 230 and 240.

Specifically, the fluid supply pipe 210 is installed above the lid 150 and introduces plasma and gas necessary for processing the wafer into the diffusion space DS. The fluid supply pipe 210 has a supply pipe 211 coupled to the base lead 151, and the supply pipe 211 has a tubular shape. A lower end of the supply pipe 211 is fixedly coupled to the lead 150, and a fluid passage 211a is formed in the supply pipe 211 in communication with the inlet 151a of the base lead 151. The fluid passage 211a is provided as a movement passage through which gas and plasma for processing the wafer move. Gas and plasma in the fluid passage 211a flow into the diffusion space DS through the inlet 151a and then pass through the baffle 140 into the process space PS.

The plasma generating unit 220 is installed in the supply pipe 211. The plasma generation unit 220 is installed above the lead 150 and is coupled to a portion adjacent to the upper end of the supply pipe 211. The plasma generator 220 generates a plasma for processing the wafer by using the first gas introduced into the supply pipe 211.

The first gas supply pipe 230 is connected to an upper end of the supply pipe 211, and the first gas supply pipe 230 provides the first gas to the supply pipe 211. The second gas supply pipe 230 is connected to an intermediate portion of the supply pipe 211, and provides a second gas to the supply pipe 211. The point where the second gas supply pipe 230 is connected in the supply pipe 211 is located below the portion where the plasma generation unit 220 is coupled. Therefore, the gas flowing into the supply pipe 211 through the second gas supply pipe 230 is not used to generate plasma, but is introduced into the diffusion space DS through the inlet 151a and then the process space ( PS).

Meanwhile, the fluid supply pipe 210 may further include a second heating member 212 that heats the supply pipe 211. The second heating member 212 surrounds the supply pipe 211 and covers an outer surface of the supply pipe 211. In this embodiment, the second gas supply pipe 240 is connected to the portion where the second heating member 212 is located, the supply pipe 211 is the portion of the plasma generating unit 220 is coupled The entire lower portion is covered by the second heating member 212.

Accordingly, the plasma and the second gas in the fluid passage 211a are heated by the second heating member 212 before being introduced into the diffusion space DS, thereby extending the lifetime of the radicals. As a result, since the number of radicals that reach the wafer is increased, the substrate processing apparatus may increase the etching rate of the oxide film per unit time.

In addition, since the plasma and the second gas heated by the second heating member 212 are introduced into the diffusion space DS heated by the first heating member 152, the plasma and the second gas are transferred to the process. It may be heated to and maintained at an appropriate temperature until it is provided in the space PS. Accordingly, the substrate processing apparatus may extend the lifetime of radicals and increase the number of radicals reaching the wafer, thereby improving the etching rate per unit time.

Hereinafter, a process of forming a reaction film for removing an oxide film in the substrate processing apparatus will be described in detail with reference to the accompanying drawings.

5 is a flowchart illustrating a process of etching an oxide film on a wafer according to an embodiment of the present invention, and FIG. 6 is a view illustrating a process of etching an oxide film on a wafer in the substrate processing apparatus of FIG. 1.

5 and 6, first, the wafer 10 on which the thin film and the oxide film made of polysilicon is formed is seated on the chuck 121 of the substrate support member 120 (step S110). In this case, the temperature controller 123 embedded in the chuck 121 adjusts the temperature of the chuck 121 to a preset temperature, for example, cools the chuck 121 to titrate the temperature of the wafer 10. Keep at temperature. Since the temperature controller 123 may locally change the temperature, the temperature of the chuck 121 may be locally changed according to process conditions and conditions of the oxide film formed on the wafer 10, for example, thickness, uniformity, and property of the oxide film. Adjust with

In this embodiment, the temperature of the chuck 121 is about -50 ℃ to 400 ℃, the pressure inside the chamber 110 is about 5mTorr to about 100000mTorr.

Meanwhile, the leads 150 and the fluid supply pipe 210 are heated by driving the first and second heating members 151 and 212 (step S120). Accordingly, the diffusion space DS defined by the lid 150 is heated to an appropriate temperature to stabilize the temperature of the diffusion space DS to a preset process temperature, and the fluid passage of the fluid supply pipe 210 An area in which the second heating member 212 is located in 211a is heated to an appropriate temperature and stabilized at a predetermined process temperature.

In this embodiment, the substrate processing apparatus heats both the lid 150 and the fluid supply unit 210, but drives only one of the first and second heating members 151 and 212 to the lead 150. Only one of the fluid supply unit 210 may be heated.

In addition, in this embodiment, the temperature of the lid 150 heated by the first heating member 151 is about 30 ° C to about 200 ° C, and the second heating member in the fluid supply 210 The temperature of the portion heated by 212 is about 50 ° C to about 150 ° C.

Although not shown in the drawing, the inner wall of the chamber 110 may also be heated by a separate heating member (not shown), whereby the temperature of the process space PS may be maintained at an appropriate temperature.

Subsequently, a first gas is introduced from the first gas supply pipe 230 into the fluid passage 211a of the fluid supply pipe 210, and the second gas is supplied from the second gas supply pipe 240 to the fluid supply pipe 210. Flows into the fluid passage 211a (step S130).

In this embodiment, the first gas comprises nitrogen, hydrogen, and nitrogen trifluoride, and serves as a substantial etching source for etching the oxide film formed on the wafer 10.

In one embodiment of the present invention, the nitrogen gas provided as the first gas, the hydrogen gas and the nitrogen trifluoride gas are injected at about 1000 sccm, about 1800 sccm, and about 10 sccm, respectively.

Further, in this embodiment, the second gas includes nitrogen trifluoride, and the second gas is provided for controlling the etching amount and selectivity of the oxide film. Here, the nitrogen trifluoride gas provided as the first gas is injected in a very small amount to maintain the etching selectivity, while the nitrogen trifluoride gas provided as the second gas is the nitrogen trifluoride gas provided as the first gas. Larger amounts are injected. In one example of the present invention, the nitrogen trifluoride gas provided as the second gas is injected at about 300 sccm.

The plasma generation unit 220 generates plasma using the first gas introduced into the fluid passage 211a (step S140). In this case, the plasma is formed in the fluid passage 211a.

In this embodiment, the first gas is excited by the plasma, but the second gas is not excited through the path in which the plasma is formed by the plasma generating unit 220, and thus is not excited unlike the first gas. .

The radical generated by the plasma generation unit 220 and the second gas are heated by the second heating member 212 in the fluid passage 211a and then through the inlet pipe 151a to the diffusion space. (DS) flows into. The radicals and the second gas in the diffusion space DS are heated by the first heating member 151 and then flow through the baffle 140 into the process space PS, and flow into the process space PS. The radicals and the second gas are provided to the wafer 10 (step S150).

The radicals and the second gas provided on the wafer 10 react with the oxide film formed on the wafer 10 to form a reaction film (step S160). In one example of the present invention, the reaction film may be made of (NH 4) 2 SiF 6.

Since the radicals are heated by the first and second heating members 151, 212 before being provided to the wafer 10, the lifetime is increased. Therefore, since the number of radicals reaching the wafer 10 increases, the formation of the reaction film is more activated. Accordingly, since the etch rate of the oxide film is improved per unit time, etching is possible regardless of the thickness of the oxide film, selective etching is possible, and the yield of the product can be improved.

In FIG. 6, GF denotes the flow of the second gas and RF denotes the flow of the radical.

Subsequently, the wafer 10 on which the reaction film is formed is withdrawn from the chamber 110 and then transferred to the annealing chamber (not shown), and the wafer 10 is about 100 while injecting oxygen gas into the annealing chamber in a vacuum state. The reaction film is removed by heating to above C (step S150). As a result, the oxide film formed on the wafer 10 is etched.

In this embodiment, the reaction film is removed by providing oxygen gas to the annealing chamber, but the reaction film may be removed by injecting nitrogen gas into the annealing chamber at a high temperature vacuum of about 100 ° C. or more.

FIG. 7A illustrates an etching amount and a selection ratio according to an injection amount of nitrogen trifluoride gas provided as a first gas, and FIG. 7B illustrates an etching amount and a selection ratio according to an injection amount of nitrogen trifluoride gas provided as a second gas. The figure shown.

7A and 7B, as the injection amount of nitrogen trifluoride gas provided as the first gas increases to 60 sccm or more, the etching amount of the oxide film and the polysilicon is controlled, but the selective etching ratio of the polysilicon is almost changed. none. That is, the fluorine radicals formed by the nitrogen trifluoride gas of the first gas is a main component for controlling the etching amount, and is heated by the lead 150 and the fluid supply pipe 210 to increase its life time. The number of fluorine radicals reaching the wafer is increased. Therefore, the substrate processing apparatus may adjust the amount of etching of the oxide film and the polysilicon by adjusting the amount of nitrogen trifluoride gas contained in the first gas.

On the other hand, as shown in Figure 7b, the etching selectivity of the polysilicon is clearly changed according to the injection amount of the nitrogen trifluoride gas provided to the second gas, there is little change in the etching amount of the polysilicon. That is, since the trifluoric acid gas provided as the second gas is provided to the wafer in an inactive state, it hardly affects the etching amount of the oxide film and the polysilicon.

Accordingly, the substrate processing apparatus may adjust the amount of nitrogen trifluoride gas provided by the first gas to adjust the etching amount of the polysilicon and the oxide film, and adjust the amount of nitrogen trifluoride gas provided by the second gas. By selecting the etch ratio of the polysilicon can be adjusted.

FIG. 8 is a graph illustrating an etching amount and an etching nonuniformity according to temperatures of the lid and chamber sidewalls of FIG. 1.

1 and 8, the etching non-uniformity G1 decreases as the temperature of the sidewalls of the lid 150 and the chamber 110 increases, while the etching amount G2 increases. As such, as the temperature of the lead 150 increases, the etching amount and the etching uniformity increase, so that the substrate processing apparatus may improve the yield and the etching efficiency of the product.

Although described with reference to the embodiments above, those skilled in the art will understand that the present invention can be variously modified and changed without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 illustrates a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating the substrate support member shown in FIG. 1.

3 is a cross-sectional view showing the lid shown in FIG.

4 is a cross-sectional view illustrating another example of the lead illustrated in FIG. 3.

5 is a flowchart illustrating a process of etching an oxide film on a wafer according to an embodiment of the present invention.

6 is a view illustrating a process of etching an oxide film on a wafer in the substrate processing apparatus of FIG. 1.

FIG. 7A illustrates an etching amount and a selection ratio according to an injection amount of nitrogen trifluoride gas provided as a first gas.

FIG. 7B is a view illustrating an etching amount and a selection ratio according to an injection amount of nitrogen trifluoride gas provided as a second gas.

FIG. 8 is a graph illustrating an etching amount and an etching nonuniformity according to temperatures of the lid and chamber sidewalls of FIG. 1.

Description of the Related Art [0002]

100: processing unit 200: plasma generating unit

Claims (22)

A chamber which provides a process space in which the substrate is processed and is open at the top; A substrate support member accommodated in the process space and on which a substrate is mounted; A lead formed at an upper portion thereof, coupled to an upper portion of the chamber, and configured to partition the process space; A plasma generation unit generating plasma for processing the substrate from a first gas; A first gas supply pipe configured to supply the first gas to the plasma generator from an upper portion of the plasma generator; A fluid passage coupled to an upper surface of the lead is formed to communicate with the inflow hole therein, and is coupled to a bottom surface of the plasma generator to provide the plasma generated by the plasma generator to the process space through the fluid passage. A fluid supply pipe; A first heating member installed on the lead to heat the lead; A second gas supply pipe connected to the fluid supply part and supplying a second gas to the fluid passage; A second heating member disposed below the portion where the plasma generation unit is coupled in the fluid supply pipe, and configured to heat the fluid supply pipe; And a baffle installed at an upper end of the chamber and disposed below the lid and uniformly dispersing the plasma introduced through the inflow hole and the second gas to provide the substrate seated on the substrate support member. The substrate processing apparatus made into it. delete delete delete The method of claim 1, And the first gas is introduced into the fluid passage through an upper end of the fluid supply pipe. The method according to claim 1 or 5, wherein the first heating member, And a plurality of heating cables each having a ring shape surrounding a center point of the lead and spaced apart from each other. The method of claim 6, The heating cables can be driven individually, Wherein each heating cable is locally temperature controlled. The method of claim 6, A body coupled to an upper end of the chamber, the plurality of heating cables embedded therein, and the inflow hole formed therein; And Substrate processing apparatus comprising a heat insulating member provided on the outer surface of the body. The method of claim 1, wherein the substrate support member, A chuck on which the substrate is seated; A support part installed below the chuck to support the chuck; And A third heating member installed at the chuck to heat the chuck, And said third heating member is capable of locally controlling the temperature. delete delete delete delete delete delete delete delete delete delete delete delete delete

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